CN115603168B - Semiconductor laser device - Google Patents

Abstract

The invention provides a semiconductor laser, which relates to the field of semiconductor technology. The semiconductor laser includes a packaging case, a chip, a heat sink, and a constant current source circuit; the chip, the heat sink, and the constant current source circuit are all arranged on the In the packaging case; the chip includes a first electrode and a second electrode, and the current passing through the first electrode is smaller than the current passing through the second electrode; the constant current source circuit includes a resistance element, and the resistance element is a sticker A chip resistor; or; the outer side of the constant current source circuit is sheathed with a first sealing structure; or; the outer side of the chip is sheathed with a second sealing structure. In the semiconductor laser provided by the present invention, a constant current source circuit is built inside the packaging case to provide currents of different sizes to the first electrode and the second electrode. This solution does not need to change the external structure of the packaging case, and can adapt the The existing packaging housing standard parts are packaged, which improves the convenience of semiconductor laser packaging.

Description

A semiconductor laser

technical field

The invention relates to the technical field of semiconductors, in particular to a semiconductor laser.

Background technique

The segmented laser can reduce the temperature of the exit light window at the small current end of the chip, thereby improving the optical catastrophic cavity surface damage (COMD).

In the prior art, when the segmented laser is packaged, at least two input current circuits need to be arranged outside the packaging case to inject currents of different magnitudes into the segmented laser.

However, in order to set two-stage input current circuits outside the package shell, it is necessary to modify the structure of the existing package shell standard parts, and also need to change the circuit accordingly. The segmented laser cannot adapt to the existing package shell standard The parts are packaged.

Contents of the invention

The object of the present invention is to provide a semiconductor laser to solve the technical problem that the segmented laser in the prior art cannot be packaged in an existing package housing standard part.

The semiconductor laser provided by the present invention includes a packaging shell, a chip, a heat sink and a constant current source circuit;

The chip, the heat sink and the constant current source circuit are all arranged in the packaging case;

The chip includes a first electrode and a second electrode, and the first electrode and the second electrode are arranged at intervals; the chip is arranged on the heat sink;

The heat sink is provided with a positive power connector and a negative power connector;

The positive connection of the power supply, the constant current source circuit, the first electrode and the negative connection of the power supply are connected in series; the positive connection of the power supply, the second electrode and the negative connection of the power supply are connected in series; through the current through the first electrode is less than the current through the second electrode;

The constant current source circuit includes a resistance element, and the resistance element is a chip resistor; or; the outer side of the constant current source circuit is provided with a first sealing structure; or; the outer side of the chip is provided with a second Sealed structure.

Further, the chip resistors include chip diodes and/or chip resistors.

Further, the first sealing structure includes a first base and a first cover;

The first cover is covered on the first base, and a first sealed cavity is formed between the first cover and the first base;

The constant current source circuit is arranged on a circuit board, and the circuit board is arranged in the first sealed cavity; the outer surface of the first base is provided with a first pin, a second pin and a third pin. pin; the first pin, the second pin and the third pin are respectively connected to the circuit board;

And the first pin is connected to the positive connecting piece of the power supply, the second pin is connected to the negative connecting piece of the power supply, and one end of the third pin is connected to the first electrode.

Further, the first pin, the second pin and the third pin are respectively fixedly connected to the heat sink.

Further, the packaging case also includes a top plate;

The first cover is fixedly connected to the top plate, and the first pin, the second pin and the third pin are respectively arranged at intervals from the heat sink.

Further, the constant current source circuit is a current limiting protection circuit.

Further, the constant current source circuit includes a voltage stabilizing element and a resistance element;

The power supply positive connection piece, the resistance element, the first electrode and the power supply negative connection piece are connected in series, and the voltage stabilizing element is connected in parallel with the first electrode.

Further, the second sealing structure includes a second base and a second cover; the bottom surface of the second base is arranged on the heat sink.

The chip is arranged on the top surface of the second base, and the top surface of the second base is also provided with a first positive connection part, a second positive connection part and a negative connection part;

The first electrodes are respectively connected to the first positive connector and the negative connector; the second electrodes are respectively connected to the second positive connector and the negative connector;

The second cover is covered on the second base, a second sealed cavity is formed between the second cover and the second base, and the chip is arranged in the second sealed cavity Inside the body; the second cover can transmit the emitted light of the chip;

Part of the first positive connection piece, part of the second positive connection piece and part of the negative connection piece protrude from the second sealed cavity;

The first positive connecting piece is connected to the resistance element, the second positive connecting piece is connected to the positive connecting piece of the power supply, and the negative connecting piece is connected to the negative connecting piece of the power supply.

Further, the second cover is connected to the second base through epoxy adhesive and/or UV curing adhesive.

Further, the second cover has a transparent area, and the transparent area is disposed opposite to the light-emitting surface of the chip; or; the second cover is a transparent cover.

The semiconductor laser provided by the present invention includes a package housing, a chip, a heat sink and a constant current source circuit; the chip, the heat sink and the constant current source circuit are all arranged in the package housing; the chip includes The first electrode and the second electrode, the first electrode and the second electrode are arranged at intervals; the chip is arranged on the heat sink; the heat sink is provided with a power supply positive connection piece and a power supply negative connection piece; The positive connection of the power supply, the constant current source circuit, the first electrode and the negative connection of the power supply are connected in series; the positive connection of the power supply, the second electrode and the negative connection of the power supply are connected in series; through The current of the first electrode is smaller than the current passing through the second electrode; the constant current source circuit includes a resistance element, and the resistance element is a chip resistor; or; the outside of the constant current source circuit is sleeved with The first sealing structure; or; the outside of the chip is sheathed with the second sealing structure. Under the action of the constant current source circuit, the current passing through the first electrode is smaller than the current passing through the second electrode, and the current passing through the first electrode is constant or does not change much; the current passing through the first electrode is smaller than the current passing through the second electrode, which can Reduce the temperature of the light-emitting surface of the chip, thereby improving the damage of the cavity surface of the optical catastrophe; the current passing through the first electrode is smaller than the current passing through the second electrode, and the current passing through the first electrode is constant or does not change much, which can make the light beam pass through the chip. The surface of the chip is emitted, and it will not cause a large heat on the light-emitting surface of the chip; the constant current source circuit includes a resistance element, and when the resistance element is a chip resistor, the chip resistor will not emit volatile gas or the volatile gas released The amount is relatively small, will not interfere with the normal operation of the chip, and can ensure the quality of the semiconductor laser; or; the outer side of the constant current source circuit is provided with a first sealing structure, which can seal the constant current source circuit in the first sealing structure, so that The volatile gas released from the constant current source circuit stays in the first sealing structure without interfering with the normal operation of the chip, which can prevent the volatile gas released from the constant current source circuit from interfering with the normal operation of the chip and ensure the quality of the semiconductor laser; or; There is a second sealing structure on the outside, which can seal the chip in the second sealing structure, and the volatile gas released from the constant current source circuit cannot enter the second sealing structure, thereby preventing the volatile gas released from the constant current source circuit from interfering with the normal operation of the chip , to ensure the quality of the semiconductor laser; compared with the scheme of injecting two sections of current with different magnitudes outside the package shell, the semiconductor laser provided by the present invention has a constant current source circuit built inside the package shell to realize the first electrode and the second electrode. The two electrodes provide currents of different magnitudes. This solution does not need to change the external structure of the packaging case, and can make the semiconductor laser adapt to the existing packaging case standard parts for packaging, thereby improving the convenience of semiconductor laser packaging.

Description of drawings

In order to more clearly illustrate the specific implementation of the present invention or the technical solutions in the prior art, the following will briefly introduce the accompanying drawings that need to be used in the specific implementation or description of the prior art. Obviously, the accompanying drawings in the following description The drawings show some implementations of the present invention, and those skilled in the art can obtain other drawings based on these drawings without any creative work.

Fig. 1 is a top view of a semiconductor laser provided by an embodiment of the present invention;

Fig. 2 is the schematic circuit diagram of the semiconductor laser provided by the embodiment of the present invention;

3 is a schematic structural diagram of a first sealing structure in a semiconductor laser provided by an embodiment of the present invention;

4 is a schematic circuit diagram of a semiconductor laser with a current limiting protection circuit provided by an embodiment of the present invention;

Fig. 5 is a top view of the second sealing structure in the semiconductor laser provided by the embodiment of the present invention;

Fig. 6 is a side view of the second sealing structure in the semiconductor laser provided by the embodiment of the present invention;

Fig. 7 is a side view of a semiconductor laser with a second sealing structure provided by an embodiment of the present invention.

Icons: 1-chip; 11-first electrode; 12-second electrode; 2-heat sink; 21-power positive connector; 22-power negative connector; 3-constant current source circuit; 31-resistance element; 32 - voltage stabilizing element; 33 - current limiting protection circuit; 331 - resistance R; 332 - resistance R1; 333 - resistance R2; 334 - triode P3; 4 - first sealing structure; 41 - first base; 411 - first Pin; 412-second pin; 413-third pin; 42-first cover; 5-second sealing structure; 51-second base; 511-first positive connector; 512-second positive connection piece; 513-negative connection piece; 52-second cover.

Detailed ways

The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

The present invention provides a semiconductor laser, and the semiconductor laser provided by the present invention will be described in detail below with a number of embodiments.

The semiconductor laser provided in this embodiment, as shown in Figures 1 to 7, includes a package housing, a chip 1, a heat sink 2 and a constant current source circuit 3; the chip 1, the heat sink 2 and the constant current source circuit 3 are all arranged on Inside the packaging case; the chip 1 includes a first electrode 11 and a second electrode 12, and the first electrode 11 and the second electrode 12 are arranged at intervals; the chip 1 is arranged on the heat sink 2; the heat sink 2 is provided with a positive power connector 21 and The power supply negative connector 22; the power supply positive connector 21, the constant current source circuit 3, the first electrode 11 and the power negative connector 22 are connected in series; the power supply positive connector 21, the second electrode 12 and the power negative connector 22 are connected in series; through the second The current of an electrode 11 is smaller than the current passing through the second electrode 12; the constant current source circuit 3 includes a resistance element 31, and the resistance element 31 is a chip resistor; or; the outer side of the constant current source circuit 3 is provided with a first sealing structure 4 ; or; the outside of the chip 1 is sheathed with a second sealing structure 5 .

Wherein, the number of the second electrode 12 may be one or multiple, and when there are multiple second electrodes 12, the multiple second electrodes 12 are connected in parallel.

Along the first direction, the first electrode 11 and the second electrode 12 are arranged at intervals, the chip 1 includes a first end and a second end oppositely arranged, the first end of the chip 1 has a light-emitting surface, and the first electrode 11 is arranged near the chip 1 At one end of the light-emitting surface, the second electrode 12 is disposed at the end of the chip 1 away from the light-emitting surface.

The first direction is a direction extending from one cavity surface of the chip 1 to the other cavity surface of the chip 1 , as indicated by arrow ab in FIG. 1 .

Under the action of the constant current source circuit 3, the electric current by the first electrode 11 is less than the electric current by the second electrode 12, and the electric current by the first electrode 11 is constant or changes little; The current of the two electrodes 12 can reduce the temperature of the light-emitting surface of the chip 1, thereby improving the optical catastrophe cavity surface damage; the current passing through the first electrode 11 is smaller than the current passing through the second electrode 12, and the current passing through the first electrode 11 is constant or variable Not too large, not only can the light beam be emitted from the light-emitting surface of the chip 1 , but also will not cause relatively large heat generation on the light-emitting surface of the chip 1 .

In one embodiment, the constant current source circuit 3 includes a resistance element. When the resistance element is a chip resistor, the chip resistor will not emit volatile gas or the amount of volatile gas released is relatively small, and will not interfere with the chip 1. Normal operation can ensure the quality of the semiconductor laser; in another embodiment, the outer side of the constant current source circuit 3 is provided with a first sealing structure 4, which can seal the constant current source circuit 3 in the first sealing structure 4, so that The volatile gas released from the constant current source circuit 3 stays in the first sealing structure 4 without interfering with the normal operation of the chip 1, which can prevent the volatile gas released from the constant current source circuit 3 from interfering with the normal operation of the chip 1 and ensure the quality of the semiconductor laser In yet another embodiment, the outside of the chip 1 is provided with a second sealing structure 5, which can seal the chip 1 in the second sealing structure 5, and the volatile gas emitted by the constant current source circuit 3 cannot enter the second sealing structure 5, so as to prevent the volatile gas emitted by the constant current source circuit 3 from interfering with the normal operation of the chip 1 and ensure the quality of the semiconductor laser.

Compared with the scheme of injecting two stages of currents of different magnitudes outside the packaging casing, the semiconductor laser provided by this embodiment has a constant current source circuit 3 built inside the packaging casing to realize the supply of power to the first electrode 11 and the second electrode 12. For different sizes of current, this solution does not need to change the external structure of the package shell, which can make the semiconductor laser better adapt to the existing package shell standard parts for packaging. It does not need to modify the existing package shell standard parts, and can The convenience of semiconductor laser packaging is improved, and the cost of semiconductor laser packaging is reduced.

In the embodiment where the constant current source circuit 3 includes a resistance element, and the resistance element is a chip resistor, the resistance element 31 can be a chip diode, a chip resistor, or a chip diode and a chip resistor; Diodes and chip resistors do not contain glass packaging or inorganic materials, and chip diodes and chip resistors do not emit volatile gases or emit relatively small amounts of volatile gases, which will not interfere with the normal operation of chip 1 .

The chip diode and/or the chip resistor can be fixed on the heat sink 2 or any suitable position in the package casing.

Wherein, as shown in Figures 1 to 2, the constant current source circuit 3 may include a voltage stabilizing element 32 and a resistance element 31; The compression element 32 is connected in parallel with the first electrode 11 .

The resistance element 31 is connected in series with the first electrode 11, which can reduce the effect of the current passing through the first electrode 11, so that the current passing through the first electrode 11 is smaller than the current passing through the second electrode 12; the voltage stabilizing element 32 and the first electrode 11 in parallel, can stabilize the voltage of the first electrode 11, and further stabilize the current passing through the first electrode 11.

In this embodiment, the voltage stabilizing element 32 is a voltage stabilizing tube.

As shown in Figures 3 to 4, in the embodiment where the first sealing structure 4 is sheathed outside the constant current source circuit 3, the first sealing structure 4 is used to wrap the constant current source circuit 3, specifically, the first sealing structure 4 includes a first base 41 and a first cover 42; the first cover 42 covers the first base 41, and a first sealed cavity is formed between the first cover 42 and the first base 41; constant The flow source circuit 3 is arranged on the circuit board, and the circuit board is arranged in the first sealed cavity; the outer surface of the first base 41 is provided with a first pin 411, a second pin 412 and a third pin 413; One pin 411, the second pin 412 and the third pin 413 are respectively connected to the circuit board; and the first pin 411 is connected to the positive connector 21 of the power supply, and the second pin 412 is connected to the negative connector 22 of the power supply. The three pins 413 are connected to the first electrode 11 .

The first base 41 and the first cover 42 adopt the TO-CAN packaging method, and the constant current source circuit 3 is sealed in the first sealing structure 4, and the first sealing structure 4 is arranged in the packaging case, so that the constant current source circuit 3 The released volatile gas is sealed in the first sealing structure 4 to prevent the volatile gas released from the constant current source circuit 3 from interfering with the normal operation of the chip 1 .

A constant current source circuit 3 is arranged on the circuit board, and the first pin 411, the second pin 412 and the third pin 413 are respectively connected to the circuit board, so that the constant current source circuit 3 can pass through the first pin 411, the second pin The pin 412 and the third pin 413 are electrically connected to external devices, and the connection is more convenient.

The constant current source circuit 3 is connected to the first electrode 11 through the third pin 413, connected to the positive power supply connector 21 through the first pin 411, and connected to the negative power connector 22 through the second pin 412, so that the positive pole of the power supply The connection part 21 , the resistance element 31 , the first electrode 11 and the power supply negative connection part 22 are connected in series, and the voltage stabilizing element 32 is connected in parallel with the first electrode 11 .

When the first sealing structure 4 is arranged in the package housing, the first pin 411, the second pin 412 and the third pin 413 can be respectively fixedly connected to the heat sink 2, so that the first sealing structure 4 is fixed on the heat sink 2 superior.

Specifically, the first pin 411, the second pin 412 and the third pin 413 are respectively welded to the heat sink 2; preferably, the first pin 411, the second pin 412 and the third pin 413 can be The bottoms are respectively bent to form bent parts, and the bent parts can be easily welded with the heat sink 2 .

The package housing includes a top plate, the first pin 411, the second pin 412 and the third pin 413 can also be fixedly connected to the top plate respectively, the first pin 411, the second pin 412 and the third pin 413 respectively Set apart from the heat sink 2.

Specifically, the first sealing structure 4 is fixed on the top plate, so that the first sealing structure 4 is fixed in the package housing; the first pin 411, the second pin 412 and the third pin 413 are respectively spaced apart from the heat sink 2 , the first pin 411 , the second pin 412 and the third pin 413 are separated from the heat sink 2 to improve the heat dissipation performance of the first pin 411 , the second pin 412 and the third pin 413 .

Wherein, the constant current source circuit 3 may be in the form including the voltage stabilizing element 32 and the resistive element 31 as stated above, or a more complex constant current source circuit 3 may be used, such as including capacitors, triodes, diodes and/or resistors, etc. The current limiting of the constant current source circuit 3 is more accurate and the energy consumption is lower.

In this embodiment, the constant current source circuit 3 uses a current limiting protection circuit 33 .

As shown in Figure 4, the current limiting protection circuit 33 includes a resistor R331, a resistor _R1332 , a resistor _R2333 and a transistor _P3334 . When the current is less than the set value, the resistor _R1332 provides the transistor _P3334 Bias current, the triode _P3334 is saturated and turned on, and does not control the current; when the current is greater than or equal to the set value, the voltage drop on the resistor R331 increases, and the sum of the voltage drop on the resistor R331 and the junction voltage of the triode The voltage drop close to the resistor R ₂ 333 starts to limit the current passing through the transistor P ₃ 334, thus limiting the current to a certain level.

In addition, various other suitable constant current source circuits 3 can also be used. The specific structure of the constant current source circuit 3 is the same as that of the constant current source circuit 3 in the prior art, and will not be repeated here.

Further, as shown in FIGS. 5 to 7, the second sealing structure 5 includes a second base 51 and a second cover 52; the bottom surface of the second base 51 is set on the heat sink 2, and the chip 1 is set on the second On the top surface of the base 51, the top surface of the second base 51 is also provided with a first positive connection part 511, a second positive connection part 512 and a negative connection part 513 arranged at intervals; The positive connecting piece 511 is connected to the negative connecting piece 513; the second electrode 12 is respectively connected to the second positive connecting piece 512 and the negative connecting piece 513; the second cover 52 is covered on the second base 51, and the second cover 52 A second sealed cavity is formed between the second base 51, and the chip 1 is placed in the second sealed cavity; the second cover 52 can transmit the emitted light of the chip 1; part of the first positive electrode connector 511, part of the second positive electrode The connecting piece 512 and part of the negative connecting piece 513 extend out of the second sealed cavity; the first positive connecting piece 511 is connected to the resistance element 31, the second positive connecting piece 512 is connected to the positive connecting piece 21 of the power supply, and the negative connecting piece 513 is connected to the negative terminal of the power supply. Connector 22 is connected.

Arranging the chip 1 in the second sealing structure 5 can prevent the volatile gas released from the constant current source circuit 3 from entering the second sealing structure 5 and ensure the normal operation of the chip 1 .

Moreover, the chip 1 and the second sealing structure 5 can be in the form of a non-surface mount device (non-SMD). The mounting device can be electrically connected to the positive power connector 21 and the negative power connector 22 respectively through bonding wires to increase the degree of design freedom. In addition, the number of bonding wires can also be set according to actual needs.

Specifically, the second base 51 is an electrically insulating body, which can be electrolytically metallized on the top surface of the second base 51 to form a metal surface, and then part of the metal surface is removed to form the first anode connector 511, the second The positive connecting piece 512 and the negative connecting piece 513 , the first positive connecting piece 511 , the second positive connecting piece 512 and the negative connecting piece 513 are arranged at intervals and electrically insulated from each other.

The first electrode 11 and the first anode connector 511 can be connected by a bonding wire; the second electrode 12 and the second anode connector 512 can be connected by a bonding wire, and the chip 1 is arranged on the negative connector 513, and the first electrode 11 The bonding wires with the first positive connecting member 511 , the bonding wires between the second electrode 12 and the second positive connecting member 512 , and the chip 1 are all disposed in the second cover 52 .

The positive connection part 21 of the power supply, the resistance element 31, the first positive connection part 511, the first electrode 11, the negative connection part 513 and the negative connection part 22 of the power supply are sequentially connected, and the resistance element 31 and the first positive connection part 511 are connected by bonding wires , the negative connecting piece 513 is connected to the negative connecting piece 22 of the power supply through a bonding wire; The connecting piece 21 is connected to the second positive connecting piece 512 through a bonding wire; the positive connecting piece 21 of the power supply, the resistance element 31, the voltage stabilizing element 32 and the negative connecting piece 22 of the power supply are connected in sequence, and the resistive element 31 and the voltage stabilizing element 32 are connected by bonding The voltage stabilizing element 32 is connected to the power negative terminal 22 through a bonding wire.

When the second base 51 and the second cover 52 are sealed, they may be connected by epoxy adhesive and/or UV curing adhesive.

The second cover 52 and the second base 51 can be connected by thermosetting epoxy adhesive, can also be connected by UV curing adhesive, and can also be thermosetting and UV curing adhesive by epoxy adhesive. connect. Both the epoxy adhesive and the UV curing adhesive have high thermal stability, which can ensure the sealing performance between the second cover 52 and the second base 51 .

Further, the second cover 52 has a transparent area, and the transparent area is disposed opposite to the light emitting surface of the chip 1; or; the second cover 52 is a transparent cover.

In one embodiment, the second cover 52 has a transparent area, and the light emitting surface of the chip 1 can emit light to the outside of the second cover 52 through the transparent area.

In another embodiment, the second cover 52 is a transparent cover, and the light emitting surface of the chip 1 can emit light to the outside of the transparent cover through the transparent cover.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.

Claims (10)

1. A semiconductor laser is characterized by comprising a packaging shell, a chip (1), a heat sink (2) and a constant current source circuit (3);

the chip (1), the heat sink (2) and the constant current source circuit (3) are all arranged in the packaging shell;

the chip (1) comprises a first electrode (11) and a second electrode (12), wherein the first electrode (11) and the second electrode (12) are arranged at intervals; the chip (1) is arranged on the heat sink (2);

the heat sink (2) is provided with a power supply anode connecting piece (21) and a power supply cathode connecting piece (22);

the power supply positive electrode connecting piece (21), the constant current source circuit (3), the first electrode (11) and the power supply negative electrode connecting piece (22) are connected in series; the power supply positive electrode connecting piece (21), the second electrode (12) and the power supply negative electrode connecting piece (22) are connected in series; the current through the first electrode (11) is smaller than the current through the second electrode (12);

the constant current source circuit (3) comprises a resistance element (31), and the resistance element (31) is a chip resistor; or; a first sealing structure (4) is sleeved on the outer side of the constant current source circuit (3); or; and a second sealing structure (5) is sleeved on the outer side of the chip (1).

2. A semiconductor laser as claimed in claim 1 wherein the chip resistor comprises a chip diode and/or a chip resistor.

3. A semiconductor laser according to claim 1, characterized in that the first sealing structure (4) comprises a first base (41) and a first cover (42);

the first cover body (42) covers the first base (41), and a first sealed cavity is formed between the first cover body (42) and the first base (41);

the constant current source circuit (3) is arranged on a circuit board, and the circuit board is arranged in the first sealed cavity; a first pin (411), a second pin (412) and a third pin (413) are arranged on the outer surface of the first base (41); the first pin (411), the second pin (412) and the third pin (413) are respectively connected with the circuit board;

the first pin (411) is connected with the power supply positive electrode connecting piece (21), the second pin (412) is connected with the power supply negative electrode connecting piece (22), and the third pin (413) is connected with the first electrode (11).

4. A semiconductor laser as claimed in claim 3, characterized in that the first leg (411), the second leg (412) and the third leg (413) are each fixedly connected to the heat sink (2).

5. A semiconductor laser as claimed in claim 3 wherein the package housing comprises a top plate;

the first cover body (42) is fixedly connected with the top plate, and the first pin (411), the second pin (412) and the third pin (413) are respectively arranged at intervals with the heat sink (2).

6. A semiconductor laser as claimed in claim 1 or 3, characterized in that the constant current source circuit (3) is a current limiting protection circuit (33).

7. The semiconductor laser according to claim 1, wherein the constant current source circuit (3) includes a voltage stabilizing element (32) and a resistance element (31);

the power supply positive electrode connecting piece (21), the resistance element (31), the first electrode (11) and the power supply negative electrode connecting piece (22) are connected in series, and the voltage stabilizing element (32) is connected with the first electrode (11) in parallel.

8. A semiconductor laser according to claim 7, characterized in that the second sealing structure (5) comprises a second base (51) and a second cover (52); the bottom surface of the second base (51) is arranged on the heat sink (2);

the chip (1) is arranged on the top surface of the second base (51), and the top surface of the second base (51) is also provided with a first positive connecting piece (511), a second positive connecting piece (512) and a negative connecting piece (513) which are arranged at intervals;

the first electrode (11) is connected with the first positive electrode connector (511) and the negative electrode connector (513) respectively; the second electrode (12) is connected to the second positive electrode connection member (512) and the negative electrode connection member (513), respectively;

the second cover body (52) covers the second base (51), a second sealed cavity is formed between the second cover body (52) and the second base (51), and the chip (1) is arranged in the second sealed cavity; the second cover body (52) can transmit the emergent light of the chip (1);

part of the first positive electrode connecting piece (511), part of the second positive electrode connecting piece (512) and part of the negative electrode connecting piece (513) extend out of the second sealed cavity;

the first positive electrode connecting piece (511) is connected with the resistance element (31), the second positive electrode connecting piece (512) is connected with the power supply positive electrode connecting piece (21), and the negative electrode connecting piece (513) is connected with the power supply negative electrode connecting piece (22).

9. Semiconductor laser according to claim 8, characterized in that the second cover (52) and the second base (51) are connected by means of an epoxy adhesive and/or a UV-curing adhesive.

10. The semiconductor laser according to claim 8, characterized in that the second cover (52) has a transparent region which is arranged opposite to a light exit surface of the chip (1); or; the second cover (52) is a transparent cover.

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