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CN115485864A - 微发光元件、微发光二极管及其转印方法 - Google Patents

微发光元件、微发光二极管及其转印方法 Download PDF

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Publication number
CN115485864A
CN115485864A CN202180001719.5A CN202180001719A CN115485864A CN 115485864 A CN115485864 A CN 115485864A CN 202180001719 A CN202180001719 A CN 202180001719A CN 115485864 A CN115485864 A CN 115485864A
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China
Prior art keywords
micro
light
emitting diode
layer
emitting element
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CN202180001719.5A
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Inventor
王彦钦
陈劲华
郭桓邵
李水清
黄少华
彭钰仁
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Xiamen Sanan Optoelectronics Technology Co Ltd
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    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

本发明公开微发光元件，微发光二极管及其转印方法，其中微发光元件包括：若干个微发光二极管，微发光二极管包括：半导体外延叠层，所述半导体外延叠层包含第一类型半导体层、第二类型半导体层和两者之间的有源层；第一台面，由半导体外延叠层凹陷露出的第一类型半导体层构成，第二台面，由第二类型半导体层构成；绝缘介质层，位于所述半导体外延叠层的第一台面和第二台面上；基架，位于所述微发光二极管下方，支撑所述微发光二极管；桥臂，用于连接微发光二极管和基架，所述微发光二极管搭接在两侧桥臂之间；其特征在于：所述桥臂的厚度小于所述第一台面上的绝缘介质层的厚度。本发明通过桥臂厚度和形状的设计，可提升微发光二极管的转移良率。

Description

PCT国内申请，说明书已公开。

Claims (20)

  1. PCT国内申请，权利要求书已公开。
CN202180001719.5A 2021-03-29 2021-03-29 微发光元件、微发光二极管及其转印方法 Pending CN115485864A (zh)

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Families Citing this family (1)

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TWI851265B (zh) * 2023-06-06 2024-08-01 隆達電子股份有限公司 具有微型積體電路的晶圓

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CN107978548A (zh) * 2017-11-20 2018-05-01 厦门市三安光电科技有限公司 微元件的巨量转移方法
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CN109103315A (zh) * 2018-07-28 2018-12-28 厦门三安光电有限公司 发光组件、微发光二极管及其显示装置
US20190081210A1 (en) * 2017-09-11 2019-03-14 Lextar Electronics Corporation Micro light emitting diode structure and method for manufacturing micro light emitting diode
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KR20200057448A (ko) * 2018-11-16 2020-05-26 엘지이노텍 주식회사 마이크로 발광 소자

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WO2015193436A1 (en) * 2014-06-18 2015-12-23 X-Celeprint Limited Systems and methods for preparing gan and related materials for micro assembly
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TWI618266B (zh) * 2016-09-07 2018-03-11 友達光電股份有限公司 微型發光二極體單元之中介結構及其製造方法、微型發光二極體單元及其製造方法與微型發光二極體裝置
DE102017106730A1 (de) * 2017-03-29 2018-10-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Bauteils und Bauteil für ein elektronisches Bauelement
CN107785502B (zh) * 2017-10-23 2019-05-14 京东方科技集团股份有限公司 一种oled显示面板及其封装方法
CN111933627B (zh) * 2020-09-14 2024-10-08 厦门乾照半导体科技有限公司 可测试及微转移的微元件及其制作、测试和转移方法、显示装置

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Publication number Priority date Publication date Assignee Title
US20190081210A1 (en) * 2017-09-11 2019-03-14 Lextar Electronics Corporation Micro light emitting diode structure and method for manufacturing micro light emitting diode
CN107609283A (zh) * 2017-09-20 2018-01-19 天津大学 基于桥臂等值电容的模块化多电平换流器高效建模方法
CN107978548A (zh) * 2017-11-20 2018-05-01 厦门市三安光电科技有限公司 微元件的巨量转移方法
CN108364971A (zh) * 2018-03-20 2018-08-03 厦门市三安光电科技有限公司 微发光元件、微发光二极管及其转印方法
CN109103315A (zh) * 2018-07-28 2018-12-28 厦门三安光电有限公司 发光组件、微发光二极管及其显示装置
KR20200057448A (ko) * 2018-11-16 2020-05-26 엘지이노텍 주식회사 마이크로 발광 소자
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