CN115036255B - Method for wire bonding of semiconductor devices - Google Patents
Method for wire bonding of semiconductor devices Download PDFInfo
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- CN115036255B CN115036255B CN202210723196.1A CN202210723196A CN115036255B CN 115036255 B CN115036255 B CN 115036255B CN 202210723196 A CN202210723196 A CN 202210723196A CN 115036255 B CN115036255 B CN 115036255B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
本发明公开了用于半导体器件引线键合的夹具及引线键合方法，所述夹具包括柔性膜，所述柔性膜包括：膜正面，所述膜正面与产品粘接面剥离粘着力满足加工要求；膜背面，所述膜背面与热台粘接面剥离粘着力大于加工要求。本发明提供的装夹方法可减少产品装夹切换用时，提高装配效率，减轻疲劳强度和改善装配质量，经测算综合提升装配效率2倍及以上。
The present invention discloses a clamp for wire bonding of semiconductor devices and a wire bonding method, wherein the clamp comprises a flexible film, wherein the flexible film comprises: a front side of the film, wherein the peeling adhesion between the front side of the film and the bonding surface of the product meets the processing requirements; and a back side of the film, wherein the peeling adhesion between the back side of the film and the bonding surface of the hot stage exceeds the processing requirements. The clamping method provided by the present invention can reduce the time for switching between product clamping, improve assembly efficiency, reduce fatigue strength and improve assembly quality, and it is calculated that the comprehensive assembly efficiency is increased by 2 times or more.
Description
Technical Field
The invention belongs to the technical field of micro-assembly processes, and particularly relates to a clamp for bonding leads of a semiconductor device and a lead bonding method.
Background
With the development of high density of microwave integrated products, the demand for micro-modules is increasing in order of magnitude. In the existing wire bonding process of microwave integrated products, the products are clamped and fixed on a hot table to ensure that the welding wires of the products are in a static state.
The clamping method in the general wire bonding procedure is to mechanically clamp and fix the product by using a reed (metal) and a tunable pressing sheet (metal) and a screw device which are arranged on a hot table, but only can clamp and circularly work by a single piece, and the clamping method in the general wire bonding procedure is to carry out array clamping and fixing by using a custom clamp, but only can be used for one or a class of products with the same appearance.
However, for products such as small-sized, thinner and irregularly-shaped (irregularly-shaped) micro modules (less than or equal to 3×3×0.38 mm), the clamping method in the traditional wire bonding process can reduce the assembly efficiency and the through rate due to incapability of clamping (caused by a device structure) and high clamping switching frequency.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides the clamp and the wire bonding method for wire bonding of the semiconductor device.
The aim of the invention is achieved by the following technical scheme:
a fixture for wire bonding of a semiconductor device, the fixture comprising a flexible membrane comprising:
the stripping adhesive force of the front surface of the film and the bonding surface of the product meets the processing requirement;
and the stripping adhesive force between the back surface of the film and the bonding surface of the hot table is greater than the processing requirement.
Further, the flexible film is prepared from a material resistant to temperatures above 200 ℃.
Further, the flexible film comprises a flexible adhesive film.
Further, the film front surface and the product bonding surface stripping adhesive force meet the processing requirements, wherein the film front surface and the product bonding surface stripping adhesive force is between 25gf/25mm and 35gf/25mm, and the film back surface and the hot table bonding surface stripping adhesive force is larger than the processing requirements, and the film back surface and the hot table bonding surface stripping adhesive force is larger than 700gf/25mm.
Further, the front and the back of the flexible film are covered with a protective film.
The invention also provides a semiconductor device wire bonding method, which uses the clamp for wire bonding of the semiconductor device to bond wires, and comprises the following steps:
Attaching the flexible film to the bonding surface of the heat table, and exhausting air between the flexible film and the bonding surface of the heat table;
Placing the product to be welded on the front surface of the film in an adhering way;
And after being heated and stabilized, conducting wire bonding operation.
Further, the products to be welded are uniformly adhered and placed on the front surface of the film in an array mode according to a gap of at least 2mm between the adjacent products to be welded when being adhered
Further, the wire bonding operation specifically includes:
sequentially welding the same-side direction connecting lines of all the products to be welded according to the sequence of the selected welding modes;
and after the welding of the connecting line in one side direction of the product to be welded is finished, the connecting line in the other side direction is welded by adjusting the direction until all the connecting lines are finished.
Further, before the step of attaching the flexible film to the heat stage adhesive surface, wiping and cleaning the heat stage surface with a cleaning agent is also included.
Further, the exhausting the air between the flexible film and the bonding surface of the heat table specifically includes:
and extruding air between the flexible film and the bonding surface of the hot table by using a flat ruler, so that the back surface of the flexible film is flatly attached to the hot table.
The invention has the beneficial effects that:
(1) The invention adopts the film pasting clamping without being limited by the external dimension of the product, solves the problem that the micro module product cannot be clamped, simultaneously solves the repeated clamping caused by the wire and tool changing of a single set of equipment, and saves the time for assembling and disassembling the product.
(2) The invention adopts array arrangement when conducting wire bonding processing on the product to be welded, can meet the requirement of streamlined processing, accords with the operation characteristics of wire bonding, can effectively reduce the time of rotating a heat table, shortens the micro-moving distance, has higher processing speed and reduces the bonding total duration of processing each product.
(3) The invention adopts the same-direction and regional processing, and can reduce the difficulty of an operator in memorizing the product connection relationship, thereby reducing wire misplacement and wire leakage and improving the product quality and the consistency of wire welding arc degree.
Drawings
FIG. 1 is a schematic view of a fixture for wire bonding of a semiconductor device according to an embodiment of the present invention;
Fig. 2 is a flow chart of a wire bonding method of a semiconductor device according to an embodiment of the present invention;
fig. 3 is a schematic flow chart of a wire bonding method of a semiconductor device according to an embodiment of the present invention.
Wherein, 1-flexible film, 2-product to be welded, 3-heat table.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict.
All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The clamping method in the general wire bonding procedure is to mechanically clamp and fix the product by using a reed (metal) and a tunable pressing sheet (metal) and a screw device which are arranged on a hot table, but only can clamp and circularly work by a single piece, and the clamping method in the general wire bonding procedure is to carry out array clamping and fixing by using a custom clamp, but only can be used for one or a class of products with the same appearance.
Aiming at products such as small-sized, thinner and irregularly-shaped (irregularly-shaped) micro modules (less than or equal to 3 multiplied by 0.38 mm), the assembly efficiency and the through rate are reduced due to the fact that clamping methods in traditional wire bonding procedures cannot be carried out (caused by device structures) and clamping switching frequency is high.
In order to solve the above technical problems, the following embodiments of the jig for wire bonding of a semiconductor device and the wire bonding method of the present invention are proposed.
Example 1
Referring to fig. 1, a schematic view of a fixture for wire bonding of a semiconductor device according to the present embodiment is shown in fig. 1, where the fixture uses a flexible film as a structural support for the entire clamping mode, and the flexible film includes a film front surface and a film back surface.
The stripping adhesive force between the front surface of the film and the bonding surface of the product meets the processing requirement, and the stripping adhesive force between the back surface of the film and the bonding surface of the heat table 3 is larger than the processing requirement. In this embodiment, the back surface of the flexible film 1 needs to be flatly adhered to the surface of the heat table 3, no air bubbles remain, and the peeling adhesion force between the adhesive surface of the flexible film 1 and the heat table 3 needs to be more than 700gf/25mm. The peel adhesion of the film front side of the flexible film 1 to the product adhesive side was required to be 30 (+ -5) gf/25mm.
When the back of the film is flatly attached to the table surface of the heat table 3, the product 2 to be welded can be flatly attached to the front of the film, and micro-movement can be reduced and the processing speed can be improved when the pipelining batch wire bonding process is performed.
When the peeling adhesion force between the back surface of the film and the bonding surface of the heat table 3 is required to be greater than 700gf/25mm, the flexible film 1 can be effectively adhered to the surface of the heat table 3, so that displacement in the wire bonding process is avoided, and the micro-movement distance is increased, thereby influencing the aging of the whole processing procedure. The peeling adhesion between the front surface of the flexible film 1 and the product bonding surface is required to be between 25gf/25mm and 35gf/25mm, if the peeling adhesion between the front surface of the flexible film 1 and the product bonding surface exceeds 35gf/25mm, the product 2 to be welded is inconvenient to assemble and disassemble, and if the peeling adhesion between the front surface of the flexible film 1 and the product bonding surface is less than 25gf/25mm, the product 2 to be welded may not be firmly bonded and generate displacement in the wire bonding process, so that the micro-movement distance is increased, and the aging of the whole processing procedure is affected.
As an embodiment, the flexible film 1 in this example is a flexible adhesive film, and is required to be resistant to temperatures of 200 ℃ or more, and to be adhesive on both sides without adhesive coating. The heat-resistant glass can be normally used on the table top of the heat table 3 only when reaching the process requirement, and the conditions of glue film damage and the like are avoided.
As an embodiment, the front and back surfaces of the flexible film 1 are covered with a protective film in this example. The adhesive force of the back surface of the flexible film 1 and the adhesive surface of the heat table 3 and the adhesive force between the front surface of the flexible film 1 and a product are required to be high, so that a protective film is covered for preservation, dust impurities and the like can be prevented from adhering to the front surface and the back surface of the flexible film 1, the adhesive force is reduced, and normal use during processing is affected.
The clamp for bonding the lead wires of the semiconductor device is not limited by the overall dimension of the product, solves the problem that a micro module product cannot be clamped, solves repeated clamping caused by wire and tool changing of a single set of equipment, and saves the assembly and disassembly time of the product.
Example 2
Referring to fig. 2 and 3, fig. 2 is a flow chart of a wire bonding method of a semiconductor device according to the present embodiment, and fig. 3 is a flow chart of a wire bonding method of a semiconductor device according to the present embodiment.
In the embodiment, the flexible adhesive film is used as a structural support of the whole clamping mode.
The method for bonding the lead of the semiconductor device provided by the embodiment specifically comprises the following steps:
And step S100, adhering the flexible film 1 on the bonding surface of the heat table 3, and exhausting air between the bonding surfaces of the flexible film 1 and the heat table 3. If there is bubble residue between the flexible film 1 and the table surface of the heat table 3, the flexible film 1 cannot be laid, and after the product 2 to be welded is bonded, the product 2 to be welded is in a plane with different heights, so that the wire bonding and water merging operation cannot be performed.
As an embodiment, the exhausting of the air between the bonding surface of the flexible film 1 and the heat stage 3 in this example specifically includes:
Air between the bonding surfaces of the flexible film 1 and the heat table 3 is extruded by a flat ruler, so that the back surface of the flexible film 1 is flatly attached to the surface of the heat table 3.
As an embodiment, before the step of attaching the flexible film 1 to the bonding surface of the heat stage 3, wiping and cleaning the surface of the heat stage 3 with a cleaning agent is further included.
As an implementation mode, in the embodiment, a cleaning agent which is easy to volatilize, high in cleanliness and basically harmless to human bodies, such as alcohol and the like is adopted, and when the device is specifically used, alcohol cotton can be adopted to wipe and clean the surface of the heat table 3 due to the small consumption of the alcohol.
And step 200, bonding and placing the product to be welded 2 on the front surface of the film.
As an implementation manner, the product to be welded 2 is adhered to the front surface of the film by using the adhesive force of the front surface of the film, and the product to be welded 2 is adhered and placed on the front surface of the film in a uniform array mode according to a gap of at least 2mm between adjacent products to be welded 2 during adhesion. Although the more the number of the products to be welded 2 bonded on the front surface of the whole film is, the higher the single processing efficiency is, if the gap between the adjacent products to be welded 2 is smaller than 2mm, the disassembly after the processing is finished is inconvenient, and the processing interference between the modules can be possibly caused, so that the adjacent products to be welded 2 can be efficiently disassembled after the wire bonding processing is finished by uniformly and arraying the gaps of at least 2mm, the next batch of products to be welded 2 is bonded, and the overall working efficiency is improved.
And step 300, conducting wire bonding operation after the heat is stabilized.
As an implementation manner, the wire bonding operation performed in this embodiment specifically includes:
Sequentially welding the same-side direction connecting lines of all the products 2 to be welded according to the sequence of the selected welding modes;
and after the welding of the connecting line in one side direction of the product 2 to be welded is finished, the connecting line in the other side direction is welded by adjusting the direction until all the connecting lines are finished.
Generally, as shown in fig. 3, the product 2 to be welded generally has four-side processing surfaces, and when manual wire bonding is performed, if the next product 2 to be welded is replaced after four-side processing of each product 2 to be welded is completed by a conventional method, the problem of wire misplacement and wire leakage is increased, so that the difficulty of memorizing the product connection relationship by an operator can be reduced by adopting the homodromous zoning processing, thereby reducing the wire misplacement and wire leakage, and further improving the product quality and the uniformity of wire welding arc degree.
It should be noted that, in this embodiment, the optional welding modes include, but are not limited to, wedge welding and ball welding, if the wedge welding mode is adopted, the second welding spot is located behind the first welding spot and is in a straight line direction, which has the advantage of processing the micro welding area, and if the ball welding mode is adopted, the second welding spot can be located in any direction of the first welding spot, the welding spot is larger than the wedge welding spot, and when wire bonding processing is performed, a suitable welding mode can be selected according to actual needs.
Compared with the general method for mechanically clamping and fixing products by using a reed (metal) and a tunable pressing sheet (metal) and a screw device which are arranged on a hot table, the lead bonding method for the semiconductor device provided by the embodiment saves 10 seconds per piece of product assembly and disassembly time on average and reduces more than 60 seconds per piece of bonding time on average by comprehensive measurement and calculation.
According to the lead bonding method for the semiconductor device, when the lead bonding processing is carried out on the product to be welded, array arrangement is adopted, so that the pipelining processing can be met, the operation characteristics of lead bonding are met, the time for rotating a heat table can be effectively reduced, the micro-movement distance is shortened, the processing speed is higher, and the total bonding time for processing each product is reduced. The method adopts the same-direction and regional processing, and can reduce the difficulty of an operator in memorizing the product connection relationship, thereby reducing wire misplacement and wire leakage and improving the product quality and the consistency of wire welding arc degree.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (5)
1. The utility model provides a semiconductor device wire bonding method, is used for the anchor clamps of semiconductor device wire bonding to carry out wire bonding, its characterized in that, anchor clamps include flexible glued membrane, flexible glued membrane adopts the material preparation of temperature resistant more than 200 ℃, flexible glued membrane includes:
the stripping adhesive force of the front surface of the film and the bonding surface of the product meets the processing requirements, wherein the stripping adhesive force of the front surface of the film and the bonding surface of the product is between 25 gf/25mm and 35 gf/25 mm;
the film back surface has a peel adhesion with the heat table bonding surface greater than the processing requirement including a peel adhesion with the heat table bonding surface greater than 700gf/25mm;
The semiconductor device wire bonding method comprises the following steps:
the flexible adhesive film is adhered to the bonding surface of the hot table, and air between the flexible adhesive film and the bonding surface of the hot table is discharged;
uniformly and uniformly arraying and bonding the products to be welded on the front surface of the film according to a gap of at least 2mm between the adjacent products to be welded when bonding;
And after being heated and stabilized, conducting wire bonding operation.
2. The method of wire bonding a semiconductor device according to claim 1, wherein the performing wire bonding operation specifically comprises:
sequentially welding the same-side direction connecting lines of all the products to be welded according to the sequence of the selected welding modes;
and after the welding of the connecting line in one side direction of the product to be welded is finished, the connecting line in the other side direction is welded by adjusting the direction until all the connecting lines are finished.
3. The method of wire bonding a semiconductor device according to claim 1, further comprising wiping clean the surface of the heat block with a cleaner before the step of attaching the flexible adhesive film to the bonding surface of the heat block.
4. The method of wire bonding a semiconductor device according to claim 1, wherein the exhausting the air between the flexible adhesive film and the heat stage bonding surface comprises:
and extruding air between the flexible adhesive film and the bonding surface of the hot table by using a flat ruler, so that the back surface of the flexible adhesive film is flatly attached to the hot table.
5. The method of wire bonding a semiconductor device according to claim 1, wherein the flexible adhesive film is covered with a protective film on both the front and back surfaces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210723196.1A CN115036255B (en) | 2022-06-24 | 2022-06-24 | Method for wire bonding of semiconductor devices |
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| CN202210723196.1A CN115036255B (en) | 2022-06-24 | 2022-06-24 | Method for wire bonding of semiconductor devices |
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| CN115036255B true CN115036255B (en) | 2025-06-27 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001110846A (en) * | 1999-10-13 | 2001-04-20 | Murata Mfg Co Ltd | Manufacturing method of electronic component |
| JP2004128115A (en) * | 2002-10-01 | 2004-04-22 | Hitachi Chem Co Ltd | Decompression fixing film, wafer protection film, dicing film, and manufacturing method of semiconductor device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1154658A (en) * | 1997-07-30 | 1999-02-26 | Hitachi Ltd | Semiconductor device, method of manufacturing the same, and frame structure |
| US20050244631A1 (en) * | 2004-04-28 | 2005-11-03 | Mitsui Chemicals, Inc. | Surface protecting film for semiconductor wafer and method of protecting semiconductor wafer using the same |
| JP4720808B2 (en) * | 2007-09-21 | 2011-07-13 | セイコーエプソン株式会社 | Adhesive sheet, joining method and joined body |
| CN101840902B (en) * | 2010-04-30 | 2011-06-15 | 江苏长电科技股份有限公司 | Direct chip placing lead frame structure and production method thereof |
| JP5716371B2 (en) * | 2010-12-03 | 2015-05-13 | 住友ベークライト株式会社 | Film for semiconductor and method for manufacturing semiconductor device |
| KR101625264B1 (en) * | 2013-05-30 | 2016-05-27 | 제일모직주식회사 | An adhesive film for radiating heat, a semiconductor device comprising the same, and a method for producing the device |
| JP5887029B1 (en) * | 2014-03-17 | 2016-03-16 | リンテック株式会社 | DIE BOND LAYER FORMING FILM, WORKED BODY WITH DIE BOND LAYER FORMING FILM AND SEMICONDUCTOR DEVICE |
| JP6902641B1 (en) * | 2020-03-13 | 2021-07-14 | 古河電気工業株式会社 | A dicing die attach film, a semiconductor package using the dicing die attach film, and a method for manufacturing the same. |
| CN114464529B (en) * | 2022-01-10 | 2025-06-17 | 绍兴同芯成集成电路有限公司 | Method for preparing a semiconductor device |
-
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001110846A (en) * | 1999-10-13 | 2001-04-20 | Murata Mfg Co Ltd | Manufacturing method of electronic component |
| JP2004128115A (en) * | 2002-10-01 | 2004-04-22 | Hitachi Chem Co Ltd | Decompression fixing film, wafer protection film, dicing film, and manufacturing method of semiconductor device |
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