CN114994962B - Electrode transmission line and silicon-based electro-optical modulator including the same - Google Patents
Electrode transmission line and silicon-based electro-optical modulator including the sameInfo
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- CN114994962B CN114994962B CN202210667833.8A CN202210667833A CN114994962B CN 114994962 B CN114994962 B CN 114994962B CN 202210667833 A CN202210667833 A CN 202210667833A CN 114994962 B CN114994962 B CN 114994962B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
本发明公开一种电极传输线，包括：至少两层金属层，且相邻金属层中对应位置的金属电极的两侧通过通孔进行电学接触，形成矩形框体状的电极结构。本发明还公开一种包含有该电极传输线的硅基电光调制器。在完全兼容现行CMOS制作工艺的条件下，本发明的结构设计优化了电极传输线的电学带宽，进而提升调制器的电学带宽，从而提高了调制器的电光带宽，因此可适应更高调制速率的使用场景；多层金属层的结构设计可增大电极传输线的截面面积，从而改善电极传输线的直流电流承受能力；本发明形成的矩形框体状的电极结构可减弱趋肤效应对高频电学信号的影响。
The present invention discloses an electrode transmission line, comprising: at least two metal layers, and the two sides of the metal electrodes at corresponding positions in the adjacent metal layers are electrically contacted through through holes to form a rectangular frame-shaped electrode structure. The present invention also discloses a silicon-based electro-optical modulator including the electrode transmission line. Under the condition of being fully compatible with the current CMOS manufacturing process, the structural design of the present invention optimizes the electrical bandwidth of the electrode transmission line, thereby improving the electrical bandwidth of the modulator, thereby increasing the electro-optical bandwidth of the modulator, and thus can adapt to the use scenarios of higher modulation rates; the structural design of the multi-layer metal layer can increase the cross-sectional area of the electrode transmission line, thereby improving the DC current bearing capacity of the electrode transmission line; the rectangular frame-shaped electrode structure formed by the present invention can reduce the influence of the skin effect on high-frequency electrical signals.
Description
Technical Field
The invention relates to the technical field of silicon-based electro-optic modulators, in particular to an electrode transmission line and a silicon-based electro-optic modulator comprising the electrode transmission line.
Background
The silicon-based electro-optic modulator is superior in comprehensive performance, and is manufactured by adopting a CMOS compatible process, so that the silicon-based electro-optic modulator can be monolithically integrated with a multiplexer and a silicon-optical integrated chip with higher integration level can be formed with silicon photon passive devices, silicon-based germanium detectors and the like, and continuous attention in academia and industry is obtained.
Silicon-based electro-optic modulators in the form of Mach-Zehnder interferometers (MZIs, mach-Zehnder interferometer) typically use traveling wave electrodes as electrode transmission lines for the modulated signals, the light waves and the electrically modulated signals propagating in the same direction in the MZI modulator. In order to improve the electro-optical bandwidth characteristic of the modulator, one mode adopted is to reduce the microwave loss of the travelling wave electrode transmission line, wherein the microwave loss mainly comes from the two aspects, namely the microwave loss of the electrode transmission line and the skin effect, and the microwave loss brought by a PN junction in a modulation area is equivalent to the electrical loss increased by the RC load added to the electrode transmission line.
The skin effect is a common phenomenon in radio frequency signal transmission. As shown in fig. 1, the direct current on the conductor is almost uniformly distributed inside the conductor, as shown in fig. 2 and 3, with the increase of the alternating current frequency, an alternating electromagnetic field appears in the conductor, the current distribution inside the conductor changes, the current mainly concentrates on the thin layer on the surface of the conductor, the current is larger as the current approaches the surface of the conductor, and the current inside the conductor is small or even no current, so that the resistance of the conductor increases and the conductor loss increases as the skin effect causes high-frequency signal transmission.
As shown in fig. 4, in the high baud rate working scenario, the driving chip and the modulator chip are connected by adopting a direct electrical coupling mode, and the output stage of the driving chip needs to flow from the modulator chip end to the driving chip, generally, from the load end of the modulator chip to the driving chip along the signal line of the modulator electrode transmission line, the direct current is likely to be larger, and under the normal working condition, the current of the driving chip with large output voltage swing needs to flow back from the modulator chip end to be 100mA or even larger, so that a higher requirement is put on the current bearing capacity of the electrode transmission line of the modulator. However, the electrode transmission line of the modulator is manufactured by adopting a CMOS compatible process, the thickness of the electrode transmission line is often limited, and is generally within 2um, and although the current bearing capacity of the electrode transmission line can be enhanced by increasing the electrode width of the signal line, the signal line width of the modulator is difficult to widen enough to safely bear a large current of more than 100mA due to the design requirement of the characteristic impedance of the modulator.
Disclosure of Invention
In order to solve the technical problems, the invention provides an electrode transmission line and a silicon-based electro-optic modulator comprising the electrode transmission line. The following presents a simplified summary in order to provide a basic understanding of some aspects of the disclosed embodiments. This summary is not an extensive overview and is intended to neither identify key/critical elements nor delineate the scope of such embodiments. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is presented later.
The invention adopts the following technical scheme:
In a first aspect, the invention provides an electrode transmission line, comprising at least two metal layers, wherein each metal layer consists of a plurality of metal electrodes, and two sides of the metal electrodes at corresponding positions in adjacent metal layers are electrically contacted through holes to form a rectangular frame-shaped electrode structure.
Further, the distribution, shape and size of the metal electrodes in each metal layer are consistent.
In a second aspect, the present invention also provides a silicon-based electro-optic modulator, which comprises the electrode transmission line.
Further, the topmost metal layer in the electrode transmission line is used as an electrode PAD layer of the silicon-based electro-optic modulator.
Further, the bottommost metal layer in the electrode transmission line is connected with the PN junction of the silicon-based electro-optic modulator through a through hole.
Further, the silicon-based electro-optic modulator further comprises a silicon substrate and a silicon dioxide isolation layer positioned above the silicon substrate, wherein the PN junction is prepared on the silicon dioxide isolation layer.
Further, the silicon-based electro-optic modulator further comprises a silicon dioxide covering layer, wherein the silicon dioxide covering layer is positioned above the silicon dioxide isolation layer, and the electrode transmission line is positioned in the silicon dioxide covering layer.
Further, the silicon-based electro-optic modulator also comprises an optical waveguide, a beam combiner, a beam splitter and a terminal load.
The invention has the beneficial effects that:
1. The structure design of the invention optimizes the electrical bandwidth of the electrode transmission line under the condition of being completely compatible with the existing CMOS manufacturing process, thereby improving the electrical bandwidth of the modulator, improving the electro-optical bandwidth of the modulator, and being suitable for the use scene of higher modulation rate;
2. the structural design of the multiple metal layers can increase the cross-sectional area of the electrode transmission line, so that the direct current bearing capacity of the electrode transmission line is improved;
3. the rectangular frame-shaped electrode structure formed by the invention can reduce the influence of skin effect on high-frequency electrical signals, improves the electrical bandwidth of an electrode transmission line, and further improves the electro-optical bandwidth of a modulator.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a DC current distribution on a conductor;
FIG. 2 is a schematic diagram of a low frequency current distribution on a conductor;
FIG. 3 is a schematic diagram of the distribution of high frequency current on a conductor;
FIG. 4 is a schematic diagram of the connection of a driver chip to a modulator chip;
FIG. 5 is a schematic diagram of a modulator;
FIG. 6 is a schematic partial cross-sectional view of a modulation region of a modulator of the present invention having two layers of metal electrodes combined to form an electrode transmission line;
FIG. 7 is a schematic partial cross-sectional view of a non-modulated region of a modulator of the present invention having two layers of metal electrodes combined to form an electrode transmission line;
FIG. 8 is a schematic partial cross-sectional view of a modulation region of a modulator of the present invention having three layers of metal electrodes combined to form an electrode transmission line;
FIG. 9 is a schematic partial cross-sectional view of a non-modulated region of a modulator of the present invention having three layers of metal electrodes combined to form an electrode transmission line;
FIG. 10 is a schematic cross-sectional view of a rectangular frame-like electrode structure of the present invention;
FIG. 11 is a schematic partial cross-sectional view of a modulation zone of a conventional traveling wave electrode modulator;
FIG. 12 is a partial schematic cross-sectional view of a non-modulated region of a conventional traveling wave electrode modulator;
Fig. 13 is a graph of bandwidth response simulation versus results for a coplanar waveguide transmission line formed of a single metal electrode and a double metal electrode.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the described embodiments are merely some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in figures 5-9, in order to improve the direct current bearing capacity of a silicon-based electro-optic modulator when the silicon-based electro-optic modulator is matched with a driving chip, and improve the electro-optic bandwidth of the modulator to adapt to the use scene of higher modulation rate, the invention provides an electrode transmission line which comprises at least two metal layers, wherein each metal layer jointly constructs the electrode transmission line. Each metal layer is composed of a plurality of metal electrodes 1, and two sides of the metal electrodes at corresponding positions in the adjacent metal layers are electrically contacted through holes to form a rectangular frame-shaped electrode structure, as shown in fig. 10. Wherein, the corresponding position refers to the metal electrode on the same vertical line in the adjacent metal layers.
The distribution, shape and size of the metal electrodes in each metal layer are identical, namely, the metal electrodes are identical in position in the plane view of the top view, but only in different layers, and the shape and size are identical, so that the metal electrodes are identical in all layers in the plan view, and the rectangular frame-shaped electrode structure can be utilized to the greatest extent when current flows, so that the skin effect generated by the conductor can be dealt with.
Since silicon photofabrication platforms are currently typically two-layer metal, the present invention is described below in terms of a typical structure of two metal layers.
As shown in fig. 6-7, the electrode transmission line includes two metal layers. The invention defines the upper metal layer of the two metal layers as a first metal layer 2, defines the lower metal layer as a second metal layer 3, and constructs the electrode transmission line together with the first metal layer 2 and the second metal layer 3.
The two sides of the metal electrode at the corresponding position in the first metal layer 2 and the second metal layer 3 are electrically contacted through the first through hole 4 to form a rectangular frame-shaped electrode structure, which has the advantages that on one hand, compared with a single-layer electrode, the cross-section area of a conductor is increased, the maximum current which can be born by the electrode can be effectively increased, the electrode has obvious advantages for matching with a drive amplifier in an open collector form, because larger direct current needs to be transmitted on a signal wire of an electrode transmission wire of a modulator when the electrode is matched with the drive amplifier in the open collector form, on the other hand, the influence of the skin effect on the electrode transmission wire is weakened, the electrode corresponding to the transmission of a high-frequency signal is also rectangular frame-shaped, and therefore, the additional high-frequency loss is weakened, the electrical bandwidth is effectively increased, and the electrode has a certain positive effect on improving the electro-optic bandwidth of the modulator.
In contrast, as shown in fig. 11-12, there is shown a schematic partial cross-sectional view of a conventional traveling wave electrode modulator in the modulated and non-modulated regions, which employs a single layer of metal electrode as the high frequency transmission line. The single-layer electrode transmission line has two difficult problems that if the electrode thickness of the metal layer is selected to be thin, for example, below 1 mu m, the direct current resistance of the electrode transmission line is large, the electric signal loss of the electrode transmission line is increased, meanwhile, the direct current bearing capacity of an electrode signal is weak, and if the electrode thickness of the metal layer is selected to be thick, for example, above 3 mu m, the direct current resistance and the low-frequency resistance are obviously reduced, but under the influence of skin effect, the effective resistance is obviously increased during high-frequency microwave transmission, and therefore, the electric bandwidth of the electrode transmission line is still influenced. In addition, according to the actual situation of the existing CMOS process, the manufacturing of the metal layer with a thicker monolayer has great difficulty. Changing the metal thickness of the single layer electrode balances the above problems to some extent, but the effect is still slightly poorer than that of the combined electrode provided by the invention.
Although current schemes for fabricating silicon optical modulators have employed two-layer or even multi-layer electrodes, the high frequency electrode transmission lines implementing the modulators tend to be of only one layer, the other layers being used only to form good electrode contacts. Either the low-level metal layer 102 is used as a high-frequency transmission line, thereby reducing the transmission loss of a high-frequency signal and realizing impedance matching, the high-level metal layer 101 is used as an electrode PAD layer for a gold wire bonding or flip-chip bonding process, thereby electrically connecting with the outside, or the high-level metal layer 101 is used as a high-frequency transmission line, thereby reducing the transmission loss of a high-frequency signal and realizing impedance matching, and the low-level metal layer 102 is used as a structural part which is firmly electrically connected with a modulator PN and electrically connects with a low-level through hole 103.
In the case of requiring the electrode transmission line to carry a large direct current, for the existing silicon optical modulator, most of the current flows through the high-layer metal layer 101 or the low-layer metal layer 102, and compared with the case of using the two-layer metal electrode combination of the invention, the resistance is larger, and the current bearing capacity is relatively weaker. Furthermore, only one layer of metal is used as the electrode transmission line, the direct current and the low frequency electric signals can be considered to be uniformly distributed on the cross section of the metal, while the equivalent cross section of the high frequency signal is reduced when the high frequency signal is limited by the skin effect, the equivalent resistance is increased, and therefore the loss of the high frequency signal transmission is increased.
The invention adopts the same size design for the first metal layer 2 and the second metal layer 3, and the metal electrodes in the two layers are connected through the first through hole 4, so that the first metal layer 2 and the second metal layer 3 can effectively bear current. The prior art only uses one layer of metal as a real high-frequency electrode transmission line of the modulator, and the other layer of metal is only used for electrical contact, and does not really adopt the form of a rectangular frame body designed by two layers of metals as the electrode transmission line.
As shown in fig. 8-9, in some cases, if the dc current carrying capability of the electrode transmission line of the modulator is high, it is also considered that the electrode transmission line is formed by combining multiple layers of metal electrodes of 2 or more layers in consideration of the characteristic impedance design of the modulator that cannot be effectively relieved by increasing the electrode width.
As shown in fig. 5-10, the present invention also provides a silicon-based electro-optic modulator comprising a PN junction 5, a silicon substrate 7, a silicon oxide isolation layer 8, a silicon oxide cap layer 9, an optical waveguide 10, and a beam splitter 11, a beam splitter 12, and a termination 13.
The input light is equally divided into two parts after passing through the beam splitter 12 and enters an upper arm and a lower arm of the MZI structure respectively, and a modulation area 14 and a non-modulation area 15 are designed in the MZI upper arm and the MZI lower arm, so that the voltage change of an electric signal brings about the change of the effective refractive index of the optical waveguide in the modulation area 14, the phase of the two light beams is changed during beam combination, and the corresponding change of the light intensity of the output light is realized.
The silicon-based electro-optic modulator of the invention comprises the electrode transmission line. The topmost metal layer in the electrode transmission line serves as an electrode PAD layer of the silicon-based electro-optic modulator. The bottommost metal layer in the electrode transmission line is connected with the PN junction 5 of the silicon-based electro-optic modulator through a second through hole 6.
A silicon dioxide isolation layer 8 is located over the silicon substrate 7, and a PN junction 5 is prepared on the silicon dioxide isolation layer 8. A silicon dioxide cap layer 9 is located over the silicon dioxide isolation layer 8, and an electrode transmission line is located within the silicon dioxide cap layer 9.
The structural design of the silicon-based electro-optic modulator provided by the invention is completely compatible with the process system of the conventional common scheme, and the electrode transmission line is optimally designed, so that the high-frequency microwave loss of the electrode transmission line is reduced, the electro-optic bandwidth of the modulator is improved, and the high-current bearing capacity of the electrode transmission line is enhanced.
As shown in fig. 13, the bandwidth response results of the coplanar waveguide transmission line formed by the single-layer metal electrode and the double-layer metal electrode are simulated and compared, and it can be seen from the graph that the electrical bandwidth characteristics of the transmission line are obviously improved after the double-layer metal electrode is combined into the electrode transmission line.
The electrode material in the simulation model is made of aluminum material, and the length of the model is 1mm. In fig. 13, h=0.5 um, h=1.0 um, and h=2.0 um refer to the results of simulation when the thicknesses of the single-layer metal electrodes are 0.5um, 1.0um, and 2.0um, respectively. H=0.5um+0.5um refers to a curve of simulation results when the thickness of one metal electrode layer in the double-layer metal electrode is 0.5um and the thickness of the other metal electrode layer is 0.5 um. H=1.0um+0.5um refers to a curve of simulation results when the thickness of one metal electrode layer is 1.0um and the thickness of the other metal electrode layer is 0.5um in the double-layer metal electrode. H=1.5um+0.5um refers to a curve of simulation results when the thickness of one metal electrode layer in the double-layer metal electrode is 1.5um and the thickness of the other metal electrode layer is 0.5 um.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (8)
1. The electrode transmission line is characterized by comprising at least two metal layers, wherein each metal layer consists of a plurality of metal electrodes, the metal electrodes at corresponding positions in the adjacent metal layers are electrically contacted through holes at two sides in the width direction to form an electrode structure, and the transverse section of the electrode structure in the width direction is in a rectangular frame shape.
2. An electrode transmission line according to claim 1, wherein the metal electrodes in each metal layer are uniformly distributed, shaped and sized.
3. A silicon-based electro-optic modulator comprising an electrode transmission line as claimed in claim 1 or 2.
4. A silicon-based electro-optic modulator as claimed in claim 3, wherein the topmost metal layer in the electrode transmission line acts as an electrode PAD layer of the silicon-based electro-optic modulator.
5. A silicon-based electro-optic modulator as defined in claim 4 wherein the bottommost metal layer in the electrode transmission line is connected to the PN junction of the silicon-based electro-optic modulator by a via.
6. The electro-optic modulator of claim 5 further comprising a silicon substrate and a silicon dioxide isolation layer over the silicon substrate, wherein the PN junction is formed on the silicon dioxide isolation layer.
7. The silicon-based electro-optic modulator of claim 6, further comprising a silicon dioxide cap layer over the silicon dioxide isolation layer, the electrode transmission line being located within the silicon dioxide cap layer.
8. A silicon-based electro-optic modulator as defined in claim 7 further comprising an optical waveguide, a combiner, a beam splitter, and an end load.
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| CN114089549A (en) * | 2020-08-24 | 2022-02-25 | 苏州旭创科技有限公司 | Traveling wave electrode modulator and photonic integrated chip |
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| KR100200756B1 (en) * | 1996-11-18 | 1999-06-15 | 윤종용 | Optical modulator and manufacturing method thereof |
| TW200409153A (en) * | 2002-09-04 | 2004-06-01 | Nec Corp | Strip line element, printed circuit board carrying member, circuit board, semiconductor package and method for forming same |
| CN100432751C (en) * | 2004-08-01 | 2008-11-12 | 浙江大学 | Light circular polarization modulator |
| JP3162220U (en) * | 2010-06-02 | 2010-08-26 | 有限会社ディアックス | High frequency semiconductor devices |
| EP3432059B1 (en) * | 2016-03-18 | 2020-12-09 | Nippon Telegraph and Telephone Corporation | Optical modulator |
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