CN114894303B - Light sensor and display panel - Google Patents
Light sensor and display panel Download PDFInfo
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- CN114894303B CN114894303B CN202210510819.7A CN202210510819A CN114894303B CN 114894303 B CN114894303 B CN 114894303B CN 202210510819 A CN202210510819 A CN 202210510819A CN 114894303 B CN114894303 B CN 114894303B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4204—Photometry, e.g. photographic exposure meter using electric radiation detectors with determination of ambient light
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The optical sensor and the display panel provided by the embodiment of the application comprise a photosensitive thin film transistor and an induction module, wherein a first electrode of the photosensitive thin film transistor is electrically connected with a first power end, a second electrode of the photosensitive thin film transistor is electrically connected with a second power end, the induction module is electrically connected with the photosensitive thin film transistor, the induction module is used for sensing light and generating corresponding induction signals, and the photosensitive thin film transistor is used for outputting induction currents corresponding to the induction signals. The light sensor can reduce the difficulty of quantitative detection of ambient light.
Description
Technical Field
The application relates to the technical field of display, in particular to an optical sensor and a display panel.
Background
Liquid crystal displays and organic light emitting displays are often used as screens for electronic devices such as mobile phones, televisions, computers, etc. because of their light weight, thinness, low power consumption, high brightness, high image quality, etc., wherein the electronic devices detect the intensity of external light at different locations through a plurality of light sensors integrated on the liquid crystal displays and the organic light emitting displays.
The current light sensor comprises a photosensitive thin film transistor, a reading thin film transistor, a capacitor and an operational amplifier, wherein the photosensitive thin film transistor is connected with a power supply, the voltage of the power supply is always higher than that of the capacitor, the photosensitive thin film transistor is subjected to photosensitive leakage, charges in the power supply flow into the capacitor through the photosensitive thin film transistor, and the voltage of the capacitor is increased, so that the intensity of external light at the position of the photosensitive thin film transistor can be calculated according to the value of the voltage increase of the capacitor. The residual charge often exists in the capacitor of the photosensor, and the amount of the residual charge is not known in the initial detection process, so that the initial detection result of the photosensor on the intensity of external light is inaccurate, the response speed is slower, and the difficulty of the photosensor on the quantitative detection of the ambient light is larger.
Disclosure of Invention
An objective of the embodiments of the present application is to provide a light sensor and a display panel, wherein the light sensor can reduce the difficulty of quantitative detection of ambient light.
In one aspect, the embodiment of the application provides a light sensor, which comprises a photosensitive thin film transistor and an induction module, wherein a first electrode of the photosensitive thin film transistor is electrically connected with a first power end, a second electrode of the photosensitive thin film transistor is electrically connected with a second power end, the induction module is electrically connected with the photosensitive thin film transistor, the induction module is used for sensing light and generating corresponding induction signals, and the photosensitive thin film transistor is used for outputting induction currents corresponding to the induction signals.
Optionally, in some embodiments of the present application, the sensing module includes a photoresistor, one end of the photoresistor is electrically connected to the first power supply terminal, and the other end of the photoresistor is electrically connected to the gate electrode of the photosensitive thin film transistor.
Optionally, in some embodiments of the present application, the sensing module further includes a voltage dividing resistor, one end of the voltage dividing resistor is electrically connected to the first power supply terminal, and the other end of the voltage dividing resistor is electrically connected to the first electrode of the photosensitive thin film transistor.
Alternatively, in some embodiments of the application, the voltage dividing resistor comprises an adjustable resistor group or a photoresistor.
Optionally, in some embodiments of the present application, the optical sensor further includes a reading module, where the reading module is electrically connected to the first node, the second power supply terminal, and the ground terminal, and the reading module is configured to calculate the intensity of the light according to an induced current output by the photosensitive thin film transistor.
Optionally, in some embodiments of the present application, the reading module includes a first resistor and a reading transistor, one end of the first resistor is electrically connected to the ground terminal through the first node, the other end of the first resistor is electrically connected to the gate of the reading transistor, the first electrode of the reading transistor is electrically connected to the first node, and the second electrode of the reading transistor is electrically connected to the second power terminal.
Optionally, in some embodiments of the present application, the read transistor is a photosensitive thin film transistor.
Optionally, in some embodiments of the present application, the reading module further includes a second resistor, one end of the second resistor is electrically connected to the ground terminal through the first node, and the other end of the second resistor is electrically connected to the first electrode of the reading transistor.
Optionally, in some embodiments of the present application, the first resistor includes an adjustable resistor or a photoresistor, and the second resistor is a photoresistor.
On the other hand, the embodiment of the application also provides a display panel, which comprises a plurality of pixel units arranged in an array and the light sensor, wherein at least one pixel unit is electrically connected with the light sensor.
The optical sensor and the display panel provided by the embodiment of the application comprise a photosensitive thin film transistor and an induction module, wherein a first electrode of the photosensitive thin film transistor is electrically connected with a first power end, a second electrode of the photosensitive thin film transistor is electrically connected with a second power end, the induction module is electrically connected with the photosensitive thin film transistor, the induction module is used for sensing light and generating corresponding induction signals, and the photosensitive thin film transistor is used for outputting induction currents corresponding to the induction signals. The light sensor is electrically connected with the sensing module and the grid electrode of the photosensitive thin film transistor, the sensing signal output by the sensing module is amplified by the photosensitive thin film transistor, namely, the magnitude of the sensing current output by the photosensitive thin film transistor is controlled by the sensing module, thereby being beneficial to reducing the quantitative detection difficulty of ambient light and improving the detection accuracy.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a circuit diagram of a photosensor according to a first embodiment of the present application;
FIG. 2 is a circuit diagram of a photosensor according to a second embodiment of the present application;
FIG. 3 is a second circuit diagram of a photosensor according to a second embodiment of the present application;
FIG. 4 is a circuit diagram of a photosensor according to a third embodiment of the present application;
FIG. 5 is a second circuit diagram of a photosensor according to a third embodiment of the present application;
FIG. 6 is a circuit diagram of a photosensor according to a fourth embodiment of the present application;
FIG. 7 is a second circuit diagram of a photosensor according to a fourth embodiment of the present application;
Fig. 8 is a schematic structural diagram of a display panel according to an embodiment of the application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.
The transistors used in all embodiments of the present application may be photosensitive thin film transistors or field effect transistors or other devices having the same characteristics, and the source and drain of the transistors used herein may be interchangeable because they are symmetrical. In the embodiment of the present application, in order to distinguish two poles of the transistor except the gate electrode, one of the source electrode and the drain electrode is referred to as a first electrode, and the other of the source electrode and the drain electrode is referred to as a second electrode. The middle end of the switch transistor is defined as a grid electrode, the signal input end is a first electrode, and the output end is a second electrode according to the mode in the figure.
Referring to fig. 1, fig. 1 is a circuit diagram of a photosensor according to a first embodiment of the present application. As shown in fig. 1, an embodiment of the present application provides a photosensor 100, which includes a photosensitive thin film transistor T1 and a sensing module 10, wherein a first electrode of the photosensitive thin film transistor T1 is electrically connected to a first power terminal VDD, a second electrode of the photosensitive thin film transistor T1 is electrically connected to a second power terminal VSS, the sensing module 10 is electrically connected to the photosensitive thin film transistor T1, the sensing module 10 is used for sensing light and generating a corresponding sensing signal, and the photosensitive thin film transistor T1 is used for outputting a sensing current corresponding to the sensing signal.
In the embodiment of the present application, the sensing module 10 includes a photo resistor R1, one end of the photo resistor R1 is electrically connected to the first power supply terminal VDD, and the other end of the photo resistor R1 is electrically connected to the gate of the photosensitive thin film transistor T1. The material of the photoresistor R1 comprises at least one of monocrystalline silicon, polycrystalline silicon or amorphous silicon, the cross section width of the photoresistor R1 is 3-500 micrometers, and the cross section length of the photoresistor R1 is 1-10 micrometers.
Further, an external reading device 11 may be connected between the second power terminal VSS and the second electrode of the photosensitive thin film transistor T1, and the external reading device 11 may obtain the induced current output by the photosensitive thin film transistor T1 and calculate the intensity of the external light.
The light sensor is electrically connected with the sensing module 10 and the gate electrode of the photosensitive thin film transistor T1, the sensing signal output by the sensing module 10 is amplified by the photosensitive thin film transistor T1, namely, the magnitude of the sensing current output by the photosensitive thin film transistor T1 is controlled by the sensing module 10, and the intensity of the output signal can be adjusted by adjusting the magnitude of the second power supply voltage, namely, the gain of the light sensor is adjusted, so that the light sensor is beneficial to reducing the quantitative detection difficulty of ambient light and improving the detection accuracy.
As an embodiment of the present application, please refer to fig. 2 and 3, fig. 2 is a circuit diagram of a photosensor provided in a second embodiment of the present application, and fig. 3 is a circuit diagram of a photosensor provided in a second embodiment of the present application. As shown in fig. 2 and 3, the embodiment of the present application provides a photosensor 200, and the photosensor 200 is different from the photosensor 100 in that the photosensor 200 further includes a voltage dividing resistor R2, one end of the voltage dividing resistor R2 is electrically connected to the first power supply terminal VDD, and the other end of the voltage dividing resistor R2 is electrically connected to the first electrode of the photosensitive thin film transistor T1.
In the embodiment of the application, the optical sensor 200 comprises a photosensitive thin film transistor T1 and a photosensitive resistor R1, wherein a first electrode of the photosensitive thin film transistor T1 is electrically connected with a first power end VDD, a second electrode of the photosensitive thin film transistor T1 is electrically connected with a second power end VSS, one end of the photosensitive resistor R1 is electrically connected with the first power end VDD, and the other end of the photosensitive resistor R1 is electrically connected with a grid electrode of the photosensitive thin film transistor T1. The photosensitive resistor R1 is used for sensing light and generating a corresponding sensing signal, namely converting the light signal into an electric signal, and the photosensitive thin film transistor T1 is used for outputting a sensing current corresponding to the sensing signal.
In an embodiment of the present application, the voltage dividing resistor R2 includes an adjustable resistor group or a photoresistor.
As shown in fig. 2, the voltage dividing resistor R2 is an adjustable group, wherein the resistance of the voltage dividing resistor R2 is matched with the resistance of the photo resistor R1, so that a potential difference is formed between the voltage between the first electrode of the photo transistor T1 and the gate of the photo transistor T1, and the sensing signal is further amplified.
As shown in fig. 3, the voltage dividing resistor R2 is a photo resistor, where by setting the light receiving areas of the voltage dividing resistor R2 and the photo resistor R1 to be unequal, that is, the sizes of the voltage dividing resistor R2 and the photo resistor R1 to be unequal, since the resistance value of the photo resistor R1/R2 changes with the intensity of the incident light, the larger the illuminance is, the larger the photo current is, and the larger the light receiving area is, the larger the corresponding photo current is in the same illumination time, so that the voltage between the first electrode of the photo thin film transistor T1 and the gate electrode of the photo thin film transistor T1 forms a potential difference, and further amplifies the sensing signal.
Furthermore, the external reading device 11 can be connected between the second power supply terminal VSS and the second electrode of the photosensitive thin film transistor T1, and the external reading device 11 can obtain the induced current output by the photosensitive thin film transistor T1 and calculate the intensity of external light, so that the design is beneficial to reducing the difficulty of quantitative detection of ambient light, improving the response speed and improving the stability and accuracy of detection.
As an embodiment of the present application, please refer to fig. 4 and 5, fig. 4 is a circuit diagram of a photosensor provided in a third embodiment of the present application, and fig. 5 is a circuit diagram of a photosensor provided in a second embodiment of the present application. As shown in fig. 4 and 5, the embodiment of the present application provides a photosensor 300, wherein the photosensor 300 is different from the photosensor 100 in that the photosensor 300 further includes a reading module 20, the reading module 20 is electrically connected to the first node E, the second power source terminal VSS and the ground terminal, and the reading module 20 is configured to calculate the intensity of light according to the induced current output by the photosensitive thin film transistor T1.
In the embodiment of the application, the reading module 20 includes a first resistor R3 and a reading transistor T2, wherein one end of the first resistor R3 is electrically connected to the ground terminal through a first node E, the other end of the first resistor R3 is electrically connected to the gate of the reading transistor T2, a first electrode of the reading transistor T2 is electrically connected to the first node E, and a second electrode of the reading transistor T2 is electrically connected to the second power terminal VSS.
In the embodiment of the application, the optical sensor 300 further comprises a photosensitive thin film transistor T1 and a photosensitive resistor R1, wherein a first electrode of the photosensitive thin film transistor T1 is electrically connected with a first power end VDD, a second electrode of the photosensitive thin film transistor T1 is electrically connected with a second power end VSS, one end of the photosensitive resistor R1 is electrically connected with the first power end VDD, and the other end of the photosensitive resistor R1 is electrically connected with a grid electrode of the photosensitive thin film transistor T1.
As shown in fig. 4, the first resistor R3 is an adjustable resistor group, and the read transistor T2 is a general thin film transistor. The sensing module 10 is electrically connected with the reading module 20, and further, an external reading device 11 can be connected between the first node E and the ground, and the external reading device 11 can obtain the voltage between the sensing module 10 and the reading module 20 and calculate the intensity of external light. The design is beneficial to further reducing the quantitative detection difficulty of the ambient light and improving the detection accuracy.
As shown in fig. 5, the first resistor R3 is an adjustable resistor, and the reading transistor T2 is a photosensitive thin film transistor. Similarly, the sensing module 10 is electrically connected to the reading module 20, and further, an external reading device 11 may be connected between the first node E and the ground, and the external reading device 11 may obtain the voltage between the sensing module 10 and the reading module 20 and calculate the intensity of the external light. The design is beneficial to further reducing the quantitative detection difficulty of the ambient light and improving the detection accuracy.
As an embodiment of the present application, please refer to fig. 6 and 7, fig. 6 is a circuit diagram of a photosensor according to a fourth embodiment of the present application, and fig. 7 is a circuit diagram of a photosensor according to a second embodiment of the present application. As shown in fig. 6 and 7, the embodiment of the present application provides a photosensor 400, where the photosensor 400 is an improvement based on the above embodiment, the reading module 20 further includes a second resistor R4, one end of the second resistor R4 is electrically connected to the ground terminal through the first node E, and the other end of the second resistor R4 is electrically connected to the first electrode of the reading transistor T2.
In the embodiment of the present application, the reading module 20 further includes a first resistor R3 and a reading transistor T2, wherein one end of the first resistor R3 is electrically connected to the ground terminal through a first node E, the other end of the first resistor R3 is electrically connected to the gate of the reading transistor T2, a first electrode of the reading transistor T2 is electrically connected to the first node E, and a second electrode of the reading transistor T2 is electrically connected to the second power terminal VSS.
In the embodiment of the application, the optical sensor 400 further comprises a photosensitive thin film transistor T1 and a photosensitive resistor R1, wherein a first electrode of the photosensitive thin film transistor T1 is electrically connected with a first power end VDD, a second electrode of the photosensitive thin film transistor T1 is electrically connected with a second power end VSS, one end of the photosensitive resistor R1 is electrically connected with the first power end VDD, and the other end of the photosensitive resistor R1 is electrically connected with a grid electrode of the photosensitive thin film transistor T1. The photoresistor R1 is used for sensing light and generating a corresponding sensing signal, namely converting an optical signal into an electrical signal.
In the embodiment of the present application, the first resistor R3 includes an adjustable resistor or a photoresistor, and the second resistor R4 is a photoresistor.
As shown in fig. 6, the first resistor R3 and the second resistor R4 are photosensitive groups, and the reading transistor T2 is a photosensitive thin film transistor. Further, an external reading device 11 may be connected between the first node E and the ground, and the external reading device 11 may obtain the voltage between the sensing module 10 and the reading module 20 and calculate the intensity of the external light. The design is beneficial to further reducing the quantitative detection difficulty of the ambient light, improving the response speed and improving the stability and accuracy of detection.
As shown in fig. 7, the sensing module 10 further includes a voltage dividing resistor R2, the voltage dividing resistor R2 is an adjustable electric group, one end of the voltage dividing resistor R2 is electrically connected to the first power supply terminal VDD, and the other end of the voltage dividing resistor R2 is electrically connected to the first electrode of the photosensitive thin film transistor T1. The resistance of the voltage dividing resistor R2 is matched with the resistance of the photoresistor R1, so that a potential difference is formed between the voltage of the first electrode of the photosensitive thin film transistor T1 and the gate of the photosensitive thin film transistor T1, and the sensing signal is further amplified. In addition, the first resistor R3 and the second resistor R4 are photosensitive groups, and the reading transistor T2 is a photosensitive thin film transistor. The sensing module 10 is electrically connected with the reading module 20, and further, an external reading device 11 can be connected between the first node E and the ground, and the external reading device 11 can obtain the voltage between the sensing module 10 and the reading module 20 and calculate the intensity of external light. The design is beneficial to further reducing the quantitative detection difficulty of the ambient light, improving the response speed and improving the stability and accuracy of detection.
Referring to fig. 8, fig. 8 is a schematic structural diagram of a display panel according to an embodiment of the application. As shown in fig. 8, the embodiment of the present application further provides a display panel 500, which includes a plurality of pixel units 510 arranged in an array and the above optical sensor 100, where at least one pixel unit 510 is electrically connected to the optical sensor 100.
In the light sensor and the display panel provided by the application, the light sensor comprises a photosensitive thin film transistor T1 and a sensing module 10, wherein a first electrode of the photosensitive thin film transistor T1 is electrically connected with a first power end VDD, a second electrode of the photosensitive thin film transistor T1 is electrically connected with a second power end VSS, the sensing module 10 is electrically connected with the photosensitive thin film transistor T1, the sensing module 10 is used for sensing light and generating corresponding sensing signals, and the photosensitive thin film transistor T1 is used for outputting sensing currents corresponding to the sensing signals. The light sensor is electrically connected with the sensing module 10 and the gate electrode of the photosensitive thin film transistor T1, the sensing signal output by the sensing module 10 is amplified by the photosensitive thin film transistor T1, namely, the magnitude of the sensing current output by the photosensitive thin film transistor T1 is controlled by the sensing module 10, thereby being beneficial to reducing the quantitative detection difficulty of the ambient light, improving the response speed and improving the stability and accuracy of detection.
While the light sensor and the display panel provided by the embodiments of the present application have been described in detail, specific examples are used herein to illustrate the principles and embodiments of the present application, the above examples are only for aiding in understanding the method and core concept of the present application, and meanwhile, the present application should not be construed as being limited to the embodiments and application scope of the present application, since the technical personnel in the field will change the scope of the present application according to the concept of the present application.
Claims (6)
1. A light sensor, comprising:
The first electrode of the photosensitive thin film transistor is electrically connected with the first power supply end, and the second electrode of the photosensitive thin film transistor is electrically connected with the second power supply end;
the sensing module is electrically connected with the photosensitive thin film transistor and is used for sensing light and generating corresponding sensing signals, and the photosensitive thin film transistor is used for outputting sensing currents corresponding to the sensing signals;
the sensing module comprises a photoresistor (R1), one end of the photoresistor (R1) is electrically connected with the first power supply end, and the other end of the photoresistor (R1) is electrically connected with the grid electrode of the photosensitive thin film transistor;
The sensing module further comprises a voltage dividing resistor (R2), one end of the voltage dividing resistor (R2) is electrically connected with the first power end, and the other end of the voltage dividing resistor (R2) is electrically connected with the first electrode of the photosensitive thin film transistor;
The voltage dividing resistor (R2) is a photoresistor;
Wherein the light receiving area of the voltage dividing resistor (R2) is not equal to the light receiving area of the light sensing resistor (R1);
The first electrode of the photosensitive thin film transistor is a source electrode, and the second electrode of the photosensitive thin film transistor is a drain electrode.
2. The light sensor of claim 1, further comprising a reading module electrically connected to a first node, the second power supply terminal and a ground terminal, the reading module for calculating the intensity of the light based on the induced current output by the light sensing thin film transistor, the reading module comprising a first resistor and a reading transistor, one end of the first resistor being electrically connected to the ground terminal via the first node, the other end of the first resistor being electrically connected to a gate of the reading transistor, a first electrode of the reading transistor being electrically connected to the first node, a second electrode of the reading transistor being electrically connected to the second power supply terminal;
the first node is a second electrode of the photosensitive thin film transistor.
3. The light sensor of claim 2, wherein the read transistor is a photosensitive thin film transistor.
4. A light sensor as recited in claim 3, wherein the read module further comprises a second resistor, one end of the second resistor being electrically connected to the ground terminal via the first node, and the other end of the second resistor being electrically connected to the first electrode of the read transistor.
5. The light sensor of claim 4, wherein the first resistor comprises an adjustable resistor or a photoresistor and the second resistor is a photoresistor.
6. A display panel comprising a plurality of pixel cells arranged in an array and a light sensor according to any one of claims 1-5, at least one of the pixel cells being electrically connected to the light sensor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210510819.7A CN114894303B (en) | 2022-05-11 | 2022-05-11 | Light sensor and display panel |
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| CN202210510819.7A CN114894303B (en) | 2022-05-11 | 2022-05-11 | Light sensor and display panel |
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| CN114894303A CN114894303A (en) | 2022-08-12 |
| CN114894303B true CN114894303B (en) | 2025-05-27 |
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| CN115900938A (en) * | 2022-09-27 | 2023-04-04 | 上海中航光电子有限公司 | A light detector and display device |
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| EP0235029A1 (en) * | 1986-02-25 | 1987-09-02 | Thomson-Csf | Optical detector of the integrated optics type and its method of manufacture |
| JP2008205480A (en) * | 2008-03-13 | 2008-09-04 | Seiko Epson Corp | Optical sensor, optical sensor reading method, matrix optical sensor circuit, and electronic apparatus |
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| JP5275652B2 (en) * | 2008-03-17 | 2013-08-28 | 株式会社ジャパンディスプレイウェスト | Light amount detection circuit and electro-optical device |
| TWI563451B (en) * | 2015-02-04 | 2016-12-21 | Hiti Digital Inc | Identifying method and device for detecting specific regions of transparent material |
| JP2019045188A (en) * | 2017-08-30 | 2019-03-22 | セイコーエプソン株式会社 | Printer and control method for printer |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0235029A1 (en) * | 1986-02-25 | 1987-09-02 | Thomson-Csf | Optical detector of the integrated optics type and its method of manufacture |
| JP2008205480A (en) * | 2008-03-13 | 2008-09-04 | Seiko Epson Corp | Optical sensor, optical sensor reading method, matrix optical sensor circuit, and electronic apparatus |
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