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CN114883229A - Wafer boat and semiconductor device - Google Patents

Wafer boat and semiconductor device Download PDF

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Publication number
CN114883229A
CN114883229A CN202210325021.5A CN202210325021A CN114883229A CN 114883229 A CN114883229 A CN 114883229A CN 202210325021 A CN202210325021 A CN 202210325021A CN 114883229 A CN114883229 A CN 114883229A
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boat
wafer
adjacent
pieces
insulating
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孙朋涛
贺小平
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to CN202210325021.5A priority Critical patent/CN114883229A/en
Publication of CN114883229A publication Critical patent/CN114883229A/en
Priority to PCT/CN2023/082460 priority patent/WO2023185524A1/en
Priority to TW112110279A priority patent/TWI872484B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本发明提供一种晶舟及半导体设备，晶舟多个间隔设置的舟片组，每个舟片组包括两个相对且间隔设置的舟片，相邻的两个舟片组用于与射频电源的相反电极连接，且同一个舟片组中的舟片均用于与射频电源的同一电极连接，相邻的两个舟片组之间的间隔空间用于放置晶片。本发明提供的晶舟及半导体设备，能够实现单侧放电，提高激发工艺气体发生辉光放电产生等离子体的稳定性，从而能够改善镀膜效果。

Figure 202210325021

The present invention provides a wafer boat and semiconductor equipment. The wafer boat is provided with a plurality of wafer groups arranged at intervals, each wafer group includes two opposite and spaced wafer groups, and the adjacent two wafer groups are used to communicate with radio frequency Opposite electrodes of the power supply are connected, and the boats in the same boat group are used to connect with the same electrode of the radio frequency power supply, and the space between two adjacent boat groups is used for placing wafers. The wafer boat and semiconductor equipment provided by the invention can realize single-side discharge, improve the stability of exciting process gas to generate glow discharge to generate plasma, and thus can improve the coating effect.

Figure 202210325021

Description

晶舟及半导体设备Wafer and semiconductor equipment

技术领域technical field

本发明涉及半导体设备技术领域，具体地，涉及一种晶舟及半导体设备。The present invention relates to the technical field of semiconductor equipment, and in particular, to a wafer boat and semiconductor equipment.

背景技术Background technique

等离子体增强化学气相沉积(Plasma Enhanced Chemical VaporDeposition，简称PECVD)设备中的管式PECVD设备通常采用石墨材质的载片舟承载晶片，载片舟包括间隔设置的多个石墨片，晶片承载于相邻的两个石墨片之间，相邻的两个石墨片分别与射频电源的正极和负电极连接，通过脉冲射频激发相邻的两个石墨片之间的工艺气体发生辉光放电产生等离子体，并通过向相邻的两个石墨片施加相反的交变电压使等离子在相邻的两个石墨片之间加速运动，从而在晶片表面进行镀膜。The tubular PECVD equipment in the plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD for short) equipment usually uses a graphite carrier boat to carry the wafer. The carrier boat includes a plurality of graphite sheets arranged at intervals. Between the two graphite sheets, the adjacent two graphite sheets are respectively connected with the positive electrode and the negative electrode of the radio frequency power supply, and the process gas between the two adjacent graphite sheets is excited by pulsed radio frequency to generate glow discharge to generate plasma, And by applying opposite alternating voltages to the two adjacent graphite sheets, the plasma is accelerated between the two adjacent graphite sheets, so as to perform coating on the surface of the wafer.

但是，随着镀膜厚度减薄的需求，传统的采用低频射频快速镀厚膜的方式已经无法满足，需要采用高频率射频，而由于高频率射频的能量衰减快，且石墨片的表面积较大，使得高频率射频在石墨片表面的能量密度偏低，无法满足石墨片的双侧放电(即，一个石墨片和与其相邻的两侧的两个石墨片之间放电)，导致激发一个石墨片和与其相邻的两个石墨片之间的工艺气体发生辉光放电产生等离子体不稳定，造成晶片表面的镀膜效果变差。However, with the demand for thinning coating thickness, the traditional method of using low-frequency radio frequency to quickly thicken the film can no longer be satisfied, and high-frequency radio frequency needs to be used. Due to the fast attenuation of high-frequency radio frequency energy and the large surface area of the graphite sheet, The energy density of high-frequency radio frequency on the surface of the graphite sheet is low, which cannot satisfy the double-sided discharge of the graphite sheet (ie, the discharge between one graphite sheet and the two adjacent graphite sheets on both sides), resulting in excitation of one graphite sheet Glow discharge occurs with the process gas between the two adjacent graphite sheets, resulting in unstable plasma, resulting in poor coating effect on the surface of the wafer.

发明内容SUMMARY OF THE INVENTION

本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种晶舟及半导体设备，其能够实现单侧放电，提高激发工艺气体发生辉光放电产生等离子体的稳定性，从而改善镀膜效果。The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a wafer boat and a semiconductor device, which can realize single-side discharge and improve the stability of exciting process gas to generate glow discharge to generate plasma, thereby Improve the coating effect.

为实现本发明的目的而提供一种晶舟，包括多个间隔设置的舟片组，每个所述舟片组包括两个相对且间隔设置的舟片，相邻的两个所述舟片组用于与射频电源的相反电极连接，且同一个所述舟片组中的所述舟片均用于与所述射频电源的同一电极连接，相邻的两个所述舟片组之间的间隔空间用于放置晶片。In order to realize the purpose of the present invention, a kind of crystal boat is provided, including a plurality of boat pieces arranged at intervals, and each described boat piece group includes two opposite and spaced boat pieces, and two adjacent boat pieces are provided. The group is used to connect with the opposite electrode of the radio frequency power supply, and the boat pieces in the same boat group are all used to connect with the same electrode of the radio frequency power supply, between the adjacent two boat groups. The separation space is used to place the wafer.

可选的，相邻的两个所述舟片之间的间距范围为0.5mm-100mm。Optionally, the distance between two adjacent boat pieces ranges from 0.5 mm to 100 mm.

可选的，相邻的两个所述舟片之间的间距大小与所述射频电源加载至所述舟片的射频的频率呈正相关。Optionally, the size of the distance between two adjacent boat pieces is positively correlated with the frequency of the radio frequency applied to the boat pieces by the radio frequency power supply.

可选的，所述晶舟还包括绝缘连接杆，所述舟片上设置有通孔，所述绝缘连接杆穿过所述通孔，所述舟片可拆卸地连接于所述绝缘连接杆上。Optionally, the crystal boat further includes an insulating connecting rod, the boat piece is provided with a through hole, the insulating connecting rod passes through the through hole, and the boat piece is detachably connected to the insulating connecting rod. .

可选的，所述晶舟还包括多个绝缘间距调节件，所述绝缘间距调节件设置在相邻的两个所述舟片之间，多个所述绝缘间距调节件中的部分所述绝缘间距调节件的厚度不同，所述绝缘间距调节件用于调节相邻的两个所述舟片之间的间距。Optionally, the wafer boat further includes a plurality of insulation distance adjustment pieces, the insulation distance adjustment pieces are arranged between two adjacent pieces of the boat, and some of the plurality of the insulation distance adjustment pieces are The thicknesses of the insulating spacing adjusting members are different, and the insulating spacing adjusting members are used to adjust the spacing between two adjacent boat pieces.

可选的，所述绝缘间距调节件的厚度范围为0.5mm-100mm。Optionally, the thickness of the insulating distance adjusting member ranges from 0.5mm to 100mm.

可选的，所述绝缘间距调节件为环状，所述绝缘间距调节件套设在所述绝缘连接杆上，所述绝缘间距调节件的外径大于所述通孔的孔径，且所述绝缘间距调节件的两个端面分别与相邻的两个所述舟片相抵接。Optionally, the insulating spacing adjusting member is annular, the insulating spacing adjusting member is sleeved on the insulating connecting rod, the outer diameter of the insulating spacing adjusting member is larger than the diameter of the through hole, and the The two end faces of the insulating distance adjusting member are respectively abutted with the two adjacent boat pieces.

可选的，所述舟片的材质为石墨。Optionally, the material of the boat piece is graphite.

可选的，所述绝缘连接杆和所述绝缘间距调节件的材质为陶瓷。Optionally, the insulating connecting rod and the insulating distance adjusting member are made of ceramics.

本发明还提供一种半导体设备，包括如本发明提供的所述晶舟。The present invention also provides a semiconductor device including the wafer boat provided by the present invention.

本发明具有以下有益效果：The present invention has the following beneficial effects:

本发明提供的晶舟，通过间隔设置多个舟片组，并使相邻的两个舟片组与射频电源的相反电极连接，且使同一个舟片组中的舟片均与射频电源的同一电极连接，可以使同一个舟片组中的两个舟片为同等电动势，消除同一个舟片组中的两个舟片之间的电势差，使同一个舟片组中的两个舟片之间不会形成电磁场，消除同一个舟片组中的两个舟片激发二者之间的工艺气体发生辉光放电产生等离子体的可能性，而使相邻的两个舟片组中的相邻的两个舟片可以激发二者之间的工艺气体发生辉光放电产生等离子体，从而能够实现舟片的单侧放电，提高激发工艺气体发生辉光放电产生等离子体的稳定性，进而能够改善镀膜效果。In the wafer boat provided by the present invention, a plurality of boat plate groups are arranged at intervals, and two adjacent boat plate groups are connected to the opposite electrodes of the radio frequency power supply, and the boat plates in the same boat plate group are connected to the radio frequency power supply. The same electrode connection can make the two boats in the same boat group have the same electromotive force, eliminate the potential difference between the two boats in the same boat group, make the two boats in the same boat group There will be no electromagnetic field formed between them, eliminating the possibility that the two boat plates in the same boat group excite the process gas between them to generate glow discharge to generate plasma, and make the two boat plates in the adjacent boat plate groups. Adjacent two boats can excite the process gas between them to generate glow discharge to generate plasma, so that one-side discharge of the boat can be realized, and the stability of the excited process gas to generate glow discharge to generate plasma is improved, and then Can improve the coating effect.

本发明提供的半导体设备，借助本发明提供的晶舟，能够实现单侧放电，提高激发工艺气体发生辉光放电产生等离子体的稳定性，从而能够改善镀膜效果。The semiconductor equipment provided by the present invention, with the aid of the wafer boat provided by the present invention, can realize single-side discharge, improve the stability of exciting the process gas to generate glow discharge and generate plasma, thereby improving the coating effect.

附图说明Description of drawings

图1为本发明实施例提供的晶舟的结构示意图；1 is a schematic structural diagram of a wafer boat provided by an embodiment of the present invention;

附图标记说明：Description of reference numbers:

1-晶舟；11-舟片；12-绝缘连接杆；13-绝缘间距调节件。1-crystal boat; 11-boat piece; 12-insulation connecting rod; 13-insulation spacing adjustment piece.

具体实施方式Detailed ways

为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的晶舟及半导体设备进行详细描述。In order to make those skilled in the art better understand the technical solutions of the present invention, the wafer boat and semiconductor equipment provided by the present invention are described in detail below with reference to the accompanying drawings.

如图1所示，本发明实施例提供一种晶舟1，包括多个间隔设置的舟片组，每个舟片组包括两个相对且间隔设置的舟片11，相邻的两个舟片组用于与射频电源的相反电极连接，且同一个舟片组中的舟片11均用于与射频电源的同一电极连接，相邻的两个舟片组之间的间隔空间用于放置晶片。As shown in FIG. 1, an embodiment of the present invention provides a wafer boat 1, which includes a plurality of boat pieces arranged at intervals, and each boat piece group includes two opposite and spaced boat pieces 11, and two adjacent boats The plate group is used to connect with the opposite electrode of the radio frequency power supply, and the boat plates 11 in the same boat plate group are used to connect with the same electrode of the radio frequency power supply, and the space between two adjacent boat plate groups is used for placing wafer.

本发明实施例提供的晶舟1，通过间隔设置多个舟片组，并使相邻的两个舟片组与射频电源的相反电极连接，且使同一个舟片组中的舟片11均与射频电源的同一电极连接，可以使同一个舟片组中的两个舟片11为同等电动势，消除同一个舟片组中的两个舟片11之间的电势差，使同一个舟片组中的两个舟片11之间不会形成电磁场，消除同一个舟片组中的两个舟片11激发二者之间的工艺气体发生辉光放电产生等离子体的可能性，而使相邻的两个舟片组中的相邻的两个舟片11可以激发二者之间的工艺气体发生辉光放电产生等离子体，从而能够实现舟片11的单侧放电，提高激发工艺气体发生辉光放电产生等离子体的稳定性，进而改善镀膜效果。In the wafer boat 1 provided by the embodiment of the present invention, a plurality of boat plate groups are arranged at intervals, and two adjacent boat plate groups are connected to the opposite electrodes of the radio frequency power supply, and the boat plates 11 in the same boat plate group are all connected to each other. Connecting to the same electrode of the RF power supply can make the two boats 11 in the same boat group have the same electromotive force, eliminate the potential difference between the two boats 11 in the same boat group, and make the same boat group 11. An electromagnetic field will not be formed between the two boat pieces 11 in the same boat group, which eliminates the possibility that the two boat pieces 11 in the same boat group excite the process gas between them to generate glow discharge and generate plasma, and make the adjacent boats 11. The adjacent two boat pieces 11 in the two boat piece groups can excite the process gas between them to generate glow discharge to generate plasma, so that the one-side discharge of the boat piece 11 can be realized, and the excitation process gas generation glow can be improved. The photodischarge produces the stability of the plasma, which in turn improves the coating effect.

如图1所示，例如，晶舟1可以包括五个间隔设置的舟片组，图1的由左至右分别为第一个舟片组至第五个舟片组(本发明实施例中所说的左和右仅是图示方向，并不代表实际方向)，第一个舟片组中的两个舟片11可以均用于与射频电源的负电极连接，第二个舟片组中的两个舟片11可以均用于与射频电源的正电极连接，第三个舟片组中的两个舟片11可以均用于与射频电源的负电极连接，第四个舟片组中的两个舟片11可以均用于与射频电源的正电极连接，第五个舟片组中的两个舟片11可以均用于与射频电源的负电极连接，即，同一个舟片组中的舟片11均用于与射频电源的同一电极连接，相邻的两个舟片用于与射频电源的相反电极连接。As shown in FIG. 1 , for example, the wafer boat 1 may include five boat sheet groups arranged at intervals, and from left to right in FIG. Said left and right are only the directions shown in the figure and do not represent the actual directions), the two boats 11 in the first boat group can both be used to connect with the negative electrode of the RF power supply, and the second boat group The two boats 11 in the middle can both be used to connect with the positive electrode of the RF power supply, the two boats 11 in the third boat group can both be used to connect with the negative electrode of the RF power supply, and the fourth boat group The two boats 11 in the can both be used to connect with the positive electrode of the RF power supply, and the two boats 11 in the fifth boat group can both be used to connect with the negative electrode of the RF power supply, that is, the same boat The boat pieces 11 in the group are all used for connecting with the same electrode of the radio frequency power supply, and the two adjacent boat pieces are used for connecting with the opposite electrodes of the radio frequency power supply.

在图1所示的五个间隔设置的舟片组中，由左至右，第一个舟片组与第二个舟片组之间的间隔空间可以用于放置晶片，第二个舟片组与第三个舟片组之间的间隔空间可以用于放置晶片，第三个舟片组与第四个舟片组之间的间隔空间可以用于放置晶片，第四个舟片组与第五个舟片组之间的间隔空间可以用于放置晶片，即，相邻的两个舟片组之间的间隔空间用于放置晶片。Among the five spaced-apart pieces shown in Figure 1, from left to right, the space between the first piece set and the second piece set can be used to place wafers, and the second piece set can be used to place wafers. The space between the third boat group and the third boat group can be used to place wafers, the space between the third boat group and the fourth boat group can be used to place wafers, and the fourth boat group and the fourth boat group can be used to place wafers. The space between the fifth boat group can be used for placing wafers, that is, the space between two adjacent boat groups is used for placing wafers.

但是，本发明实施例提供的晶舟1所包括的舟片11的数量和舟片组的数量并不以此为限。However, the number of boat pieces 11 and the number of boat piece groups included in the wafer boat 1 provided in the embodiment of the present invention are not limited thereto.

下面以图1的由左至右，第一个舟片组至第三个舟片组为例进行说明，由于第二个舟片组中的两个舟片11均与射频电源的正电极连接，因此，第二个舟片组中的两个舟片11的电压和相位角相同，第二个舟片组中的两个舟片11为同等电动势，消除了第二个舟片组中的两个舟片11之间的电势差，使第二个舟片组中的两个舟片11之间不会形成电磁场，消除了第二个舟片组中的两个舟片11激发二者之间的工艺气体发生辉光放电产生等离子体的可能性，而由于第一个舟片组中的两个舟片11均与射频电源的负电极连接，第三个舟片组中的两个舟片11均与射频电源的负电极连接，因此，第二个舟片组中左侧的舟片11(即，图1的由左至右第三个舟片11)与第一个舟片组中右侧的舟片11(即，图1的由左至右第二个舟片11)之间具有电势差具有电磁场，可以激发二者之间的工艺气体发生辉光放电产生等离子体，且第二个舟片组中右侧的舟片11(即，由图1的左至右第四个舟片11)与第三个舟片组中左侧的舟片11(即，由图1的左至右第五个舟片11)之间具有电势差具有电磁场，可以激发二者之间的工艺气体发生辉光放电产生等离子体，从而使得第二个舟片组中的两个舟片11均能够实现单侧放电，继而能够提高激发工艺气体发生辉光放电产生等离子体的稳定性，进而能够改善镀膜效果。In the following, from left to right in FIG. 1, the first to the third boat plate group is taken as an example for description, because the two boat plates 11 in the second boat plate group are both connected to the positive electrode of the radio frequency power supply , therefore, the voltage and phase angle of the two boat plates 11 in the second boat plate group are the same, and the two boat plates 11 in the second boat plate group have the same electromotive force, eliminating the The potential difference between the two boat pieces 11 prevents the formation of an electromagnetic field between the two boat pieces 11 in the second boat piece group, eliminating the excitation of the two boat pieces 11 in the second boat piece group. The possibility of generating plasma by glow discharge of the process gas between the two The plates 11 are all connected to the negative electrode of the radio frequency power supply. Therefore, the left boat 11 in the second boat group (that is, the third boat 11 from left to right in FIG. 1 ) is connected to the first boat group. The boat 11 on the right side in the middle (that is, the second boat 11 from left to right in FIG. 1 ) has a potential difference and an electromagnetic field, which can excite the process gas between the two to generate glow discharge to generate plasma, and the first The boat piece 11 on the right side in the two boat piece groups (that is, the fourth boat piece 11 from left to right in FIG. 1 ) and the boat piece 11 on the left side in the third boat piece group (that is, the boat piece 11 on the left side in FIG. 1 ) There is a potential difference between the fifth boat piece 11) from left to right and an electromagnetic field, which can excite the process gas between the two to generate glow discharge to generate plasma, so that the two boat pieces 11 in the second boat piece group are both Single-side discharge can be realized, and then the stability of exciting the process gas to generate glow discharge to generate plasma can be improved, and furthermore, the coating effect can be improved.

另外，如公开号为CN214753673U公开的一种晶舟1，在与射频电源的相反电极连接的两个舟片11之间设置绝缘件，通过绝缘件对与射频电源相反电极连接的两个舟片11之间的间隔空间进行物理阻挡的方式，来阻止与射频电源相反电极连接的两个舟片11激发二者之间的工艺气体发生辉光放电产生等离子体。由于舟片11与绝缘件是机械连接，人工装配过程会有缝隙，而此缝隙可能造成与射频电源相反电极连接的两个舟片11之间的间隔空间无法被绝缘件完全阻挡，导致与射频电源相反电极连接的两个舟片11之间的工艺气体仍然会在绝缘件的外表面形成不稳定的辉光放电区域，从而激发等离子体淀积在舟片11上，多次工艺后，会导致舟片11变脏，污染晶片。并且，常用的绝缘件为陶瓷材质，价格昂贵且难以加工，导致晶舟1的成本增加。并且，陶瓷易碎且密度较高，陶瓷的绝缘件重量较重，造成绝缘件的放置和固定困难，机械结构可靠性较差，难以大规模使用。并且，两个舟片11之间的间隔空间需要根据不同工艺的需求来进行调整，导致绝缘件的厚度也需要随之调整，而加工不同厚度的绝缘件，也会造成成本的增加。In addition, such as a kind of wafer boat 1 disclosed by publication number CN214753673U, an insulating member is arranged between two boat pieces 11 connected with the opposite electrodes of the radio frequency power supply, and the two boat pieces connected with the opposite electrodes of the radio frequency power supply are connected by the insulating piece. The space between the two boats 11 is physically blocked to prevent the two boats 11 connected to the opposite electrodes of the RF power source from exciting the process gas between them to generate glow discharge to generate plasma. Since the boat piece 11 is mechanically connected to the insulating member, there will be a gap in the manual assembly process, and this gap may cause the space between the two boat pieces 11 connected to the opposite electrodes of the radio frequency power source to be unable to be completely blocked by the insulating piece, resulting in the connection with the RF power supply. The process gas between the two boats 11 connected by the opposite electrodes of the power supply will still form an unstable glow discharge area on the outer surface of the insulating member, thereby exciting the plasma to be deposited on the boat 11. As a result, the boat 11 becomes dirty and contaminates the wafer. In addition, the commonly used insulating member is made of ceramic material, which is expensive and difficult to process, resulting in an increase in the cost of the wafer boat 1 . In addition, ceramics are fragile and have high density, and the insulating parts of ceramics are heavy, making it difficult to place and fix the insulating parts, and have poor mechanical structure reliability, making it difficult to use on a large scale. In addition, the space between the two boat pieces 11 needs to be adjusted according to the requirements of different processes, so that the thickness of the insulating member also needs to be adjusted accordingly, and the processing of insulating members with different thicknesses will also increase the cost.

而本发明实施例提供的晶舟1，是通过使同一个舟片组中的舟片11均与射频电源的同一电极连接，以使同一个舟片组中的两个舟片11为同等电动势，消除同一个舟片组中的两个舟片11之间的电势差，使同一个舟片组中的两个舟片11之间不会形成电磁场，消除同一个舟片组中的两个舟片11激发二者之间的工艺气体发生辉光放电产生等离子体的可能性，也就是说，工艺气体在同一个舟片组中的两个舟片11之间完全不会被激发发生辉光放电产生等离子体，因此，本发明实施例提供的晶舟1在多次工艺后，舟片11依然能保持干净，不会造成脏污，并且，本发明实施例提供的晶舟1，由于无需使用绝缘件，因此，自然也就不会增加成本、重量，也不会造成设计、加工及装配困难。In the wafer boat 1 provided in the embodiment of the present invention, the boat pieces 11 in the same boat piece group are connected to the same electrode of the radio frequency power supply, so that the two boat pieces 11 in the same boat piece group have the same electromotive force. , eliminate the potential difference between the two boats 11 in the same boat group, so that no electromagnetic field is formed between the two boats 11 in the same boat group, and eliminate the two boats in the same boat group. The possibility that the process gas between the two plates 11 is excited to generate glow discharge to generate plasma, that is to say, the process gas will not be excited to generate glow at all between the two boat plates 11 in the same boat group. Discharge generates plasma. Therefore, the wafer 11 provided by the embodiment of the present invention can still be kept clean after multiple processes without causing contamination. Moreover, the wafer boat 1 provided by the embodiment of the present invention does not require The use of insulating parts, therefore, naturally does not increase cost, weight, and does not cause difficulties in design, processing and assembly.

在本发明一优选实施例中，相邻的两个舟片11之间的间距范围可以为0.5mm-100mm。In a preferred embodiment of the present invention, the distance between two adjacent boat pieces 11 may range from 0.5 mm to 100 mm.

在实际应用中，相邻的两个舟片11之间的间距，可以根据不同工艺的工艺需求进行调整，以能够在镀膜工艺均匀性、承载晶片数量和电磁场稳定性之间进行多重组合搭配。In practical applications, the distance between two adjacent boat pieces 11 can be adjusted according to the process requirements of different processes, so as to be able to perform multiple combinations among the uniformity of the coating process, the number of supported wafers and the stability of the electromagnetic field.

在本发明一优选实施例中，相邻的两个舟片11之间的间距大小可以与射频电源加载至舟片11的射频的频率呈正相关。In a preferred embodiment of the present invention, the distance between two adjacent boat pieces 11 may be positively correlated with the frequency of the radio frequency applied by the RF power source to the boat pieces 11 .

也就是说，射频电源加载至舟片11的射频的频率越大，相邻的两个舟片11之间的间距越大，射频电源加载至舟片11的射频的频率越小，相邻的两个舟片11之间的间距越小。That is to say, the greater the frequency of the radio frequency applied by the RF power source to the boat 11, the greater the distance between two adjacent boat pieces 11, and the smaller the frequency of the radio frequency applied by the RF power source to the boat 11, and the adjacent The distance between the two boat pieces 11 is smaller.

如图1所示，在本发明一优选实施例中，晶舟1可以还包括绝缘连接杆12，舟片11上设置有通孔，绝缘连接杆12穿过通孔，舟片11可拆卸地连接于绝缘连接杆12上。As shown in FIG. 1 , in a preferred embodiment of the present invention, the wafer boat 1 may further include an insulating connecting rod 12 , the boat piece 11 is provided with a through hole, the insulating connecting rod 12 passes through the through hole, and the boat piece 11 is detachable Connected to the insulating connecting rod 12 .

也就是说，绝缘连接杆12穿过多个舟片11上的通孔，多个舟片11通过绝缘连接杆12连接。通过使多个舟片11可拆卸地连接于绝缘连接杆12上，可以便于对相邻的两个舟片11之间的间距进行调节，并且可以便于对舟片11进行更换。That is to say, the insulating connecting rods 12 pass through the through holes on the plurality of boat pieces 11 , and the plurality of boat pieces 11 are connected by the insulating connecting rods 12 . By detachably connecting the plurality of boat pieces 11 to the insulating connecting rods 12 , the distance between two adjacent boat pieces 11 can be easily adjusted, and the boat pieces 11 can be easily replaced.

如图1所示，在本发明一优选实施例中，晶舟1可以还包括多个绝缘间距调节件13，绝缘间距调节件13设置在相邻的两个舟片11之间，多个绝缘间距调节件13中的部分绝缘间距调节件13的厚度不同，绝缘间距调节件13用于对相邻的两个舟片11之间的间距进行调节。As shown in FIG. 1 , in a preferred embodiment of the present invention, the wafer boat 1 may further include a plurality of insulation spacing adjustment members 13 , and the insulation spacing adjustment members 13 are arranged between two adjacent boat pieces 11 . Some of the insulating spacing adjusting members 13 in the spacing adjusting members 13 have different thicknesses, and the insulating spacing adjusting members 13 are used to adjust the spacing between two adjacent boat pieces 11 .

通过将不同厚度的绝缘间距调节件13设置在相邻的两个舟片11之间，可以改变相邻的两个舟片11之间的间距，对相邻的两个舟片11之间的间距进行调节，以使晶舟1能够适用于不同工艺。By arranging the insulating distance adjusting members 13 of different thicknesses between two adjacent boat pieces 11 , the distance between the two adjacent boat pieces 11 can be changed. The spacing is adjusted so that the wafer boat 1 can be adapted to different processes.

在本发明一优选实施例中，绝缘间距调节件13的厚度范围可以为0.5mm-100mm。In a preferred embodiment of the present invention, the thickness of the insulating distance adjusting member 13 may range from 0.5 mm to 100 mm.

这样能够实现相邻的两个舟片11之间的间距范围为0.5mm-100mm。In this way, the distance between two adjacent boat pieces 11 can be in the range of 0.5mm-100mm.

在本发明一优选实施例中，绝缘间距调节件13可以为环状，绝缘间距调节件13可以套设在绝缘连接杆12上，绝缘间距调节件13的外径大于通孔的孔径，且绝缘间距调节件13的两个端面分别与相邻的两个舟片11相抵接。In a preferred embodiment of the present invention, the insulating spacing adjusting member 13 can be annular, the insulating spacing adjusting member 13 can be sleeved on the insulating connecting rod 12, the outer diameter of the insulating spacing adjusting member 13 is larger than the diameter of the through hole, and the insulating spacing adjusting member 13 The two end surfaces of the distance adjusting member 13 are respectively abutted against two adjacent boat pieces 11 .

通过使绝缘间距调节件13以为环状，并使绝缘间距调节件13的外径大于舟片11上的通孔的孔径，这样当绝缘间距调节件13套设在绝缘连接杆12上时，可以避免绝缘间距调节件13从舟片11上的通孔穿过，以使绝缘间距调节件13的两个端面能够分别与相邻的两个舟片11相抵接，从而能够借助绝缘间距调节件13对相邻的两个舟片11之间的间距进行调节。By making the insulating spacing adjusting member 13 ring-shaped, and making the outer diameter of the insulating spacing adjusting member 13 larger than the diameter of the through hole on the boat piece 11, when the insulating spacing adjusting member 13 is sleeved on the insulating connecting rod 12, it can be Avoid the insulating spacing adjusting member 13 from passing through the through hole on the boat piece 11 , so that the two end faces of the insulating spacing adjusting member 13 can abut with the two adjacent boat pieces 11 respectively, so that the insulating spacing adjusting member 13 can be used. The distance between two adjacent boat pieces 11 is adjusted.

在本发明一优选实施例中，舟片11的材质可以为石墨。In a preferred embodiment of the present invention, the material of the boat piece 11 may be graphite.

在本发明一优选实施例中，绝缘连接杆12和绝缘间距调节件13的材质可以为陶瓷。In a preferred embodiment of the present invention, the insulating connecting rod 12 and the insulating distance adjusting member 13 may be made of ceramics.

本发明实施例还提供一种半导体设备，包括如本发明实施例提供的晶舟1。The embodiment of the present invention further provides a semiconductor device, including the wafer boat 1 provided by the embodiment of the present invention.

本发明实施例提供的半导体设备，借助本发明实施例提供的晶舟1，能够实现单侧放电，提高激发工艺气体发生辉光放电产生等离子体的稳定性，从而能够改善镀膜效果。The semiconductor device provided by the embodiment of the present invention, with the wafer boat 1 provided by the embodiment of the present invention, can realize one-side discharge, improve the stability of exciting the process gas to generate glow discharge and generate plasma, thereby improving the coating effect.

综上所述，本发明实施例提供的晶舟1及半导体设备，能够实现单侧放电，提高激发工艺气体发生辉光放电产生等离子体的稳定性，从而能够改善镀膜效果。To sum up, the wafer boat 1 and the semiconductor equipment provided by the embodiments of the present invention can realize one-side discharge, improve the stability of exciting the process gas to generate glow discharge and generate plasma, and thus can improve the coating effect.

可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变形和改进，这些变形和改进也视为本发明的保护范围。It can be understood that the above embodiments are only exemplary embodiments adopted to illustrate the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, without departing from the spirit and essence of the present invention, various modifications and improvements can be made, and these modifications and improvements are also regarded as the protection scope of the present invention.

Claims (10)

1. The wafer boat is characterized by comprising a plurality of boat group assemblies arranged at intervals, wherein each boat group assembly comprises two opposite boat sheets arranged at intervals, the two adjacent boat sheet groups are used for being connected with opposite electrodes of a radio frequency power supply, the same boat sheet in each boat group is used for being connected with the same electrode of the radio frequency power supply, and an interval space between the two adjacent boat sheet groups is used for placing wafers.
2. The substrate boat according to claim 1, wherein the distance between two adjacent boat pieces ranges from 0.5mm to 100 mm.
3. The wafer boat according to claim 2, wherein the distance between two adjacent boat pieces is positively correlated to the frequency of the RF applied to the boat pieces by the RF power source.
4. The wafer boat according to claim 1, further comprising an insulating connecting rod, wherein a through hole is provided on the boat plate, the insulating connecting rod passes through the through hole, and the boat plate is detachably connected to the insulating connecting rod.
5. The wafer boat according to claim 4, further comprising a plurality of insulating space adjusters disposed between two adjacent boat pieces, wherein a part of the insulating space adjusters among the plurality of insulating space adjusters has different thicknesses, and the insulating space adjusters are used for adjusting a space between two adjacent boat pieces.
6. The wafer boat according to claim 5, wherein the thickness of the insulation gap adjusting member is in a range of 0.5mm to 100 mm.
7. The wafer boat according to claim 5, wherein the insulation gap adjuster is ring-shaped, the insulation gap adjuster is sleeved on the insulation connecting rod, an outer diameter of the insulation gap adjuster is larger than a hole diameter of the through hole, and two end faces of the insulation gap adjuster are respectively abutted against two adjacent boat pieces.
8. The wafer boat according to claim 1, wherein the boat sheet is made of graphite.
9. The wafer boat according to claim 5, wherein the insulating connecting rods and the insulating gap adjusters are made of ceramic.
10. A semiconductor device comprising the boat according to any one of claims 1 to 9.
CN202210325021.5A 2022-03-29 2022-03-29 Wafer boat and semiconductor device Pending CN114883229A (en)

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