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CN114882826A - Shift register, driving method thereof, gate driving circuit and display device - Google Patents

Shift register, driving method thereof, gate driving circuit and display device Download PDF

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CN114882826A
CN114882826A CN202210591500.1A CN202210591500A CN114882826A CN 114882826 A CN114882826 A CN 114882826A CN 202210591500 A CN202210591500 A CN 202210591500A CN 114882826 A CN114882826 A CN 114882826A
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transistor
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冯伟
谷晓芳
郑敏栋
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Hefei Xinsheng Optoelectronics Technology Co Ltd
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/02Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264Details of driving circuits
    • G09G2310/0286Details of a shift registers arranged for use in a driving circuit

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Abstract

本公开提供的移位寄存器、其驱动方法、栅极驱动电路及显示装置,包括输入电路,被配置为响应于输入信号端的信号,将输入信号端的信号提供给第一节点;驱动输出电路,至少被配置为响应于第一节点的信号,将时钟信号端的信号作为栅极驱动信号提供给驱动信号输出端;残留电荷释放电路,被配置为响应于放电信号端的信号,将第一参考信号端的第一参考信号提供给驱动信号输出端,第一参考信号的电平与栅极驱动信号的电平相同。

Figure 202210591500

A shift register, a driving method thereof, a gate driving circuit and a display device provided by the present disclosure include an input circuit configured to provide a signal of the input signal terminal to a first node in response to a signal of the input signal terminal; a driving output circuit, at least is configured to respond to the signal of the first node, provide the signal of the clock signal terminal as a gate drive signal to the driving signal output terminal; the residual charge discharge circuit is configured to respond to the signal of the discharge signal terminal, the first reference signal terminal A reference signal is provided to the driving signal output terminal, and the level of the first reference signal is the same as that of the gate driving signal.

Figure 202210591500

Description

移位寄存器、其驱动方法、栅极驱动电路及显示装置Shift register, driving method thereof, gate driving circuit and display device

技术领域technical field

本公开涉及显示技术领域,尤其涉及一种移位寄存器、其驱动方法、栅极驱动电路及显示装置。The present disclosure relates to the field of display technology, and in particular, to a shift register, a driving method thereof, a gate driving circuit and a display device.

背景技术Background technique

随着显示技术的大力发展,显示装置的成本要求越来越低,如何有效的降低面板的制作成本关系着产品竞争力的强弱。为了降低显示装置的制作成本,相关技术利用显示装置的边缘设计栅极驱动电路,栅极驱动电路包括级联设置的多个移位寄存器,在显示阶段,每一行移位寄存器控制该行像素进行显示。这样的设计可以节省在显示装置上放置覆晶薄膜和印刷电路板的空间,不仅能够实现显示装置的窄边框设计,还可以同时降低显示装置的制作成本,提高产品的竞争力。With the vigorous development of display technology, the cost requirements of display devices are getting lower and lower, and how to effectively reduce the manufacturing cost of the panel is related to the strength of product competitiveness. In order to reduce the manufacturing cost of the display device, the related art utilizes the edge of the display device to design a gate drive circuit. The gate drive circuit includes a plurality of shift registers arranged in cascade. In the display stage, each row of shift registers controls the row of pixels to perform show. Such a design can save space for placing a chip on film and a printed circuit board on the display device, not only can realize a narrow frame design of the display device, but also can reduce the manufacturing cost of the display device and improve the competitiveness of the product.

发明内容SUMMARY OF THE INVENTION

本公开实施例提供一种移位寄存器、其驱动方法、栅极驱动电路及显示装置,用以解决现有技术中存在的显示区内的残留电荷无法正常释放而导致异常显示的问题。Embodiments of the present disclosure provide a shift register, a driving method thereof, a gate driving circuit and a display device, which are used to solve the problem in the prior art that the residual charge in the display area cannot be discharged normally, resulting in abnormal display.

因此,本公开实施例提供的一种移位寄存器,包括:Therefore, a shift register provided by an embodiment of the present disclosure includes:

输入电路,被配置为响应于输入信号端的信号,将所述输入信号端的信号提供给第一节点;an input circuit configured to provide the signal at the input signal terminal to the first node in response to the signal at the input signal terminal;

驱动输出电路,至少被配置为响应于所述第一节点的信号,将时钟信号端的信号作为栅极驱动信号提供给驱动信号输出端;a drive output circuit, at least configured to provide the signal at the clock signal terminal as a gate drive signal to the drive signal output terminal in response to the signal at the first node;

残留电荷释放电路,被配置为响应于放电信号端的信号,将第一参考信号端的第一参考信号提供给所述驱动信号输出端,所述第一参考信号的电平与所述栅极驱动信号的电平相同。a residual charge discharge circuit configured to provide a first reference signal at the first reference signal terminal to the drive signal output terminal in response to a signal at the discharge signal terminal, the level of the first reference signal being the same as that of the gate drive signal the same level.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,所述放电信号端包括:至少一个子放电信号端,所述残留电荷释放电路包括:与所述子放电信号端一一对应的子放电电路,所述子放电电路被配置为响应于对应的所述子放电信号端的信号,将所述第一参考信号提供给所述驱动信号输出端。In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, the discharge signal terminal includes: at least one sub-discharge signal terminal, and the residual charge discharge circuit includes: one-to-one with the sub-discharge signal terminal A corresponding sub-discharge circuit, the sub-discharge circuit is configured to provide the first reference signal to the drive signal output terminal in response to a signal corresponding to the sub-discharge signal terminal.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,所述子放电电路包括:第一晶体管,所述第一晶体管的栅极与对应的所述子放电信号端耦接,所述第一晶体管的第一极与所述第一参考信号端耦接,所述第一晶体管的第二极与所述驱动信号输出端耦接。In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, the sub-discharge circuit includes: a first transistor, and a gate of the first transistor is coupled to the corresponding sub-discharge signal terminal, The first pole of the first transistor is coupled to the first reference signal terminal, and the second pole of the first transistor is coupled to the driving signal output terminal.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,至少部分所述子放电电路还包括:第一电容,在同一所述子放电电路中,所述第一电容耦接在所述第一晶体管的栅极与所述第一参考信号端之间。In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, at least some of the sub-discharge circuits further include: a first capacitor, and in the same sub-discharge circuit, the first capacitor is coupled to between the gate of the first transistor and the first reference signal terminal.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,还包括:复位电路,至少被配置为响应于初始复位信号端的信号,将第二参考信号端的信号提供给所述第一节点;In some embodiments, the above-mentioned shift register provided by the embodiments of the present disclosure further includes: a reset circuit, configured at least to provide the signal of the second reference signal terminal to the first in response to the signal of the initial reset signal terminal node;

至少部分所述子放电信号端与所述初始复位信号端和/或所述第一参考信号端复用,或者全部所述子放电信号端与所述初始复位信号端、所述第一参考信号端独立设置。At least some of the sub-discharge signal terminals are multiplexed with the initial reset signal terminal and/or the first reference signal terminal, or all the sub-discharge signal terminals are multiplexed with the initial reset signal terminal and the first reference signal terminal. side independent settings.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,所述复位电路还被配置为响应于复位信号端的信号,将所述第二参考信号端的信号提供给所述第一节点,并将所述第一参考信号端的第二参考信号提供给所述驱动信号输出端,所述第二参考信号端的信号的电平、所述第二参考信号的电平均与所述第一参考信号的电平相反。In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, the reset circuit is further configured to provide the signal of the second reference signal terminal to the first node in response to the signal of the reset signal terminal , and provide the second reference signal at the first reference signal terminal to the driving signal output terminal, the level of the signal at the second reference signal terminal and the level of the second reference signal are the same as the first reference signal. The levels of the signals are opposite.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,所述复位电路包括:第二晶体管、第三晶体管和第四晶体管,其中,In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, the reset circuit includes: a second transistor, a third transistor and a fourth transistor, wherein,

所述第二晶体管的栅极与所述初始复位信号端耦接,所述第二晶体管的第一极与所述第二参考信号端耦接,所述第二晶体管的第二极与所述第一节点耦接;The gate of the second transistor is coupled to the initial reset signal terminal, the first electrode of the second transistor is coupled to the second reference signal terminal, and the second electrode of the second transistor is coupled to the second reference signal terminal. the first node is coupled;

所述第三晶体管的栅极与所述复位信号端耦接,所述第三晶体管的第一极与所述第二参考信号端耦接,所述第三晶体管的第二极与所述第一节点耦接;The gate of the third transistor is coupled to the reset signal terminal, the first electrode of the third transistor is coupled to the second reference signal terminal, and the second electrode of the third transistor is coupled to the second reference signal terminal. A node is coupled;

所述第四晶体管的栅极与所述复位信号端耦接,所述第四晶体管的第一极与所述第一参考信号端耦接,所述第四晶体管的第二极与所述驱动信号输出端。The gate of the fourth transistor is coupled to the reset signal terminal, the first electrode of the fourth transistor is coupled to the first reference signal terminal, and the second electrode of the fourth transistor is coupled to the driver signal output.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,还包括至少一个控制电路;In some embodiments, the above-mentioned shift register provided by the embodiments of the present disclosure further includes at least one control circuit;

所述控制电路被配置为响应于所述输入信号端的信号和选择信号端的信号,控制第二节点的电平和所述第一节点的电平相反,其中,所述选择信号端、所述第二节点均与所述控制电路一一对应;The control circuit is configured to control the level of the second node to be opposite to the level of the first node in response to the signal of the input signal terminal and the signal of the selection signal terminal, wherein the selection signal terminal, the second node The nodes are in one-to-one correspondence with the control circuit;

所述驱动输出电路还被配置为响应于所述第二节点的信号,将所述第一参考信号端的第二参考信号提供给所述驱动信号输出端,所述第二参考信号的电平与所述第一参考信号的电平相反。The drive output circuit is further configured to provide a second reference signal of the first reference signal terminal to the drive signal output terminal in response to the signal of the second node, the level of the second reference signal being the same as that of the drive signal output terminal. The level of the first reference signal is opposite.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,所述控制电路包括:第五晶体管、第六晶体管、第七晶体管和第八晶体管;In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, the control circuit includes: a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor;

所述第五晶体管的栅极、所述第五晶体管的第一极均与对应的所述选择信号端耦接,所述第五晶体管的第二极与所述第六晶体管的第二极耦接;The gate of the fifth transistor and the first electrode of the fifth transistor are both coupled to the corresponding selection signal terminals, and the second electrode of the fifth transistor is coupled to the second electrode of the sixth transistor catch;

所述第六晶体管的栅极与所述第一节点耦接,所述第六晶体管的第一极与所述第二参考信号端耦接;The gate of the sixth transistor is coupled to the first node, and the first electrode of the sixth transistor is coupled to the second reference signal terminal;

所述第七晶体管的栅极与所述输入信号端耦接,所述第七晶体管的第一极与所述第二参考信号端耦接,所述第七晶体管的第二极与对应的所述第二节点耦接;The gate of the seventh transistor is coupled to the input signal terminal, the first pole of the seventh transistor is coupled to the second reference signal terminal, and the second pole of the seventh transistor is connected to the corresponding the second node is coupled;

所述第八晶体管的栅极与对应的所述第二节点耦接,所述第八晶体管的第一极与所述第二参考信号端耦接,所述第八晶体管的第二极与所述第一节点耦接。The gate of the eighth transistor is coupled to the corresponding second node, the first electrode of the eighth transistor is coupled to the second reference signal terminal, and the second electrode of the eighth transistor is coupled to the second node. The first node is coupled.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,所述驱动输出电路包括:第二电容、第九晶体管、以及与所述第二节点一一对应的第十晶体管,其中,In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, the driving output circuit includes: a second capacitor, a ninth transistor, and a tenth transistor corresponding to the second node one-to-one, wherein ,

所述第二电容耦接在所述第一节点与所述驱动信号输出端之间;the second capacitor is coupled between the first node and the driving signal output end;

所述第九晶体管的栅极与所述第一节点耦接,所述第九晶体管的第一极与所述时钟信号端耦接,所述第九晶体管的第二极与所述驱动信号输出端耦接;The gate of the ninth transistor is coupled to the first node, the first pole of the ninth transistor is coupled to the clock signal terminal, and the second pole of the ninth transistor is output to the driving signal end coupling;

所述第十晶体管的栅极与对应的所述第二节点耦接,所述第十晶体管的第一极与所述第一参考信号端耦接,所述第十晶体管的第二极与所述驱动信号输出端耦接。The gate of the tenth transistor is coupled to the corresponding second node, the first electrode of the tenth transistor is coupled to the first reference signal terminal, and the second electrode of the tenth transistor is coupled to the first reference signal terminal. The driving signal output end is coupled.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,还包括级联输出电路,被配置为响应于所述第一节点的信号,将所述时钟信号端的信号提供给级联信号输出端,以及响应于所述第二节点的信号,将第二参考信号端的信号提供给所述级联信号输出端。In some embodiments, the above-mentioned shift register provided by the embodiments of the present disclosure further includes a cascade output circuit, configured to provide the signal of the clock signal terminal to the cascade in response to the signal of the first node A signal output terminal, and in response to the signal at the second node, providing a signal at the second reference signal terminal to the cascaded signal output terminal.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,所述级联输出电路包括:第十一晶体管、以及与所述第二节点一一对应的第十二晶体管,其中,In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, the cascaded output circuit includes: an eleventh transistor and a twelfth transistor corresponding to the second node one-to-one, wherein,

所述第十一晶体管的栅极与所述第一节点耦接,所述第十一晶体管的第一极与所述时钟信号端耦接,所述第十一晶体管的第二极与所述级联信号输出端耦接;The gate of the eleventh transistor is coupled to the first node, the first pole of the eleventh transistor is coupled to the clock signal terminal, and the second pole of the eleventh transistor is coupled to the clock signal terminal. The cascade signal output terminal is coupled;

所述第十二晶体管的栅极与对应的所述第二节点耦接,所述第十二晶体管的第一极与所述第二参考信号端耦接,所述第十二晶体管的第二极与所述级联信号输出端耦接。The gate of the twelfth transistor is coupled to the corresponding second node, the first electrode of the twelfth transistor is coupled to the second reference signal terminal, and the second The pole is coupled to the cascaded signal output terminal.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,所述输入电路包括第十三晶体管,所述第十三晶体管的栅极、所述第十三晶体管的第一极均与所述输入信号端耦接,所述第十三晶体管的第二极与所述第一节点耦接。In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, the input circuit includes a thirteenth transistor, and the gate of the thirteenth transistor and the first pole of the thirteenth transistor are both is coupled to the input signal terminal, and the second electrode of the thirteenth transistor is coupled to the first node.

基于同一发明构思,本公开实施例提供了一种栅极驱动电路,包括:级联的多个本公开实施例提供的上述移位寄存器;Based on the same inventive concept, an embodiment of the present disclosure provides a gate driving circuit, including: a plurality of the above-mentioned shift registers provided by the embodiments of the present disclosure are cascaded;

首级移位寄存器的输入信号端与帧触发信号端耦接;The input signal terminal of the first stage shift register is coupled to the frame trigger signal terminal;

除所述首级移位寄存器之外,其余各级移位寄存器的输入信号端分别与其相邻的上一级移位寄存器的级联信号输出端耦接;Except for the first stage shift register, the input signal terminals of the other stage shift registers are respectively coupled to the cascaded signal output terminals of the adjacent previous stage shift registers;

各级移位寄存器的驱动信号输出端与对应行的栅线相连。The drive signal output ends of the shift registers of all levels are connected to the gate lines of the corresponding row.

基于同一发明构思,本公开实施例提供了一种显示装置,包括本公开实施例提供的上述栅极驱动电路。Based on the same inventive concept, an embodiment of the present disclosure provides a display device including the above-mentioned gate driving circuit provided by the embodiment of the present disclosure.

基于同一发明构思,本公开实施例提供了一种上述移位寄存器的驱动方法,包括:Based on the same inventive concept, an embodiment of the present disclosure provides a method for driving the above shift register, including:

输入阶段,输入电路响应于输入信号端的信号,将所述输入信号端的信号提供给第一节点;In the input stage, the input circuit provides the signal of the input signal terminal to the first node in response to the signal of the input signal terminal;

输出阶段,级联输出电路至少响应于所述第一节点的信号,将时钟信号端的信号作为栅极驱动信号提供给驱动信号输出端;In the output stage, the cascaded output circuit at least responds to the signal of the first node, and provides the signal of the clock signal terminal as the gate driving signal to the driving signal output terminal;

关机阶段,残留电荷释放电路响应于放电信号端的信号,将第一参考信号端的第一参考信号提供给所述驱动信号输出端,所述第一参考信号的电平与所述栅极驱动信号的电平相同。In the shutdown stage, the residual charge discharge circuit responds to the signal of the discharge signal terminal, and provides the first reference signal of the first reference signal terminal to the driving signal output terminal, and the level of the first reference signal is the same as that of the gate driving signal. the same level.

本公开有益效果如下:The beneficial effects of the present disclosure are as follows:

本公开实施例提供的移位寄存器、其驱动方法、栅极驱动电路及显示装置,包括输入电路,被配置为响应于输入信号端的信号,将输入信号端的信号提供给第一节点;驱动输出电路,至少被配置为响应于第一节点的信号,将时钟信号端的信号作为栅极驱动信号提供给驱动信号输出端;残留电荷释放电路,被配置为响应于放电信号端的信号,将第一参考信号端的第一参考信号提供给驱动信号输出端,第一参考信号的电平与栅极驱动信号的电平相同。在每帧显示时间内,通过输入电路和输出电路相互配合为驱动信号输出端提供栅极驱动信号,使得栅极驱动信号通过栅线传递至显示区内的晶体管,晶体管在栅极驱动信号的控制下打开对像素进行充电,实现画面显示。通过增加残留电荷释放电路,可在关机瞬间为驱动信号输出端提供电平与栅极驱动信号相同的第一参考信号,使得第一参考信号通过栅线传递至显示区内的晶体管,晶体管在第一参考信号的控制下打开,晶体管内的残留电荷得到充分释放,这样在需要进行画面显示时,就不会因残留电荷而产生异常显示。The shift register, the driving method thereof, the gate driving circuit and the display device provided by the embodiments of the present disclosure include an input circuit configured to provide the signal of the input signal terminal to the first node in response to the signal of the input signal terminal; the driving output circuit , at least configured to respond to the signal of the first node, provide the signal of the clock signal terminal as a gate drive signal to the drive signal output terminal; the residual charge discharge circuit is configured to respond to the signal of the discharge signal terminal, the first reference signal The first reference signal at the gate is provided to the driving signal output terminal, and the level of the first reference signal is the same as that of the gate driving signal. During the display time of each frame, the input circuit and the output circuit cooperate with each other to provide a gate driving signal for the output terminal of the driving signal, so that the gate driving signal is transmitted to the transistor in the display area through the gate line, and the transistor is controlled by the gate driving signal. Turn it on to charge the pixels and realize the screen display. By adding the residual charge discharge circuit, the first reference signal with the same level as the gate driving signal can be provided to the output terminal of the driving signal at the moment of shutdown, so that the first reference signal is transmitted to the transistor in the display area through the gate line, and the transistor is in the first Once it is turned on under the control of the reference signal, the residual charge in the transistor is fully released, so that when the screen needs to be displayed, abnormal display will not occur due to the residual charge.

附图说明Description of drawings

图1为本公开实施例提供的显示装置的结构示意图;FIG. 1 is a schematic structural diagram of a display device according to an embodiment of the present disclosure;

图2为本公开实施例提供的移位寄存器的结构示意图;FIG. 2 is a schematic structural diagram of a shift register provided by an embodiment of the present disclosure;

图3为本公开实施例提供的信赖性运行前后驱动信号输出端的电平曲线对比示意图;3 is a schematic diagram comparing the level curves of the drive signal output terminals before and after reliable operation provided by the embodiment of the present disclosure;

图4为相关技术中信赖性运行前后驱动信号输出端的电平曲线对比示意图;4 is a schematic diagram showing the comparison of the level curves of the drive signal output terminals before and after reliable operation in the related art;

图5为本公开实施例提供的移位寄存器的一种具体结构示意图;FIG. 5 is a schematic structural diagram of a specific structure of a shift register provided by an embodiment of the present disclosure;

图6为本公开实施例提供的移位寄存器的又一种具体结构示意图;6 is a schematic diagram of another specific structure of a shift register provided by an embodiment of the present disclosure;

图7为本公开实施例提供的移位寄存器的又一种具体结构示意图;FIG. 7 is a schematic diagram of another specific structure of a shift register provided by an embodiment of the present disclosure;

图8为本公开实施例提供的移位寄存器的又一种具体结构示意图;8 is a schematic diagram of another specific structure of a shift register provided by an embodiment of the present disclosure;

图9为本公开实施例提供的移位寄存器的又一种具体结构示意图;FIG. 9 is a schematic diagram of another specific structure of a shift register provided by an embodiment of the present disclosure;

图10为本公开实施例提供的移位寄存器的又一种具体结构示意图;FIG. 10 is a schematic diagram of another specific structure of a shift register provided by an embodiment of the present disclosure;

图11为本公开实施例提供的移位寄存器的又一种具体结构示意图;FIG. 11 is a schematic diagram of another specific structure of a shift register provided by an embodiment of the present disclosure;

图12为本公开实施例提供的移位寄存器的又一种具体结构示意图;FIG. 12 is a schematic diagram of another specific structure of a shift register provided by an embodiment of the present disclosure;

图13为本公开实施例提供的信号时序图;FIG. 13 is a signal timing diagram provided by an embodiment of the present disclosure;

图14为本公开实施例提供的移位寄存器的工作流程图。FIG. 14 is a working flowchart of a shift register provided by an embodiment of the present disclosure.

具体实施方式Detailed ways

为使本公开实施例的目的、技术方案和优点更加清楚,下面将结合本公开实施例的附图,对本公开实施例的技术方案进行清楚、完整地描述。需要注意的是,附图中各图形的尺寸和形状不反映真实比例,目的只是示意说明本公开内容。并且自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。为了保持本公开实施例的以下说明清楚且简明,本公开省略了已知功能和已知部件的详细说明。In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present disclosure. It should be noted that the sizes and shapes of the figures in the accompanying drawings do not reflect the actual scale, and are only intended to illustrate the present disclosure. And the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. In order to keep the following description of the embodiments of the present disclosure clear and concise, the present disclosure omits detailed descriptions of well-known functions and well-known components.

除非另作定义,此处使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“内”、“外”、“上”、“下”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. As used in this disclosure and in the claims, "first," "second," and similar terms do not denote any order, quantity, or importance, but are merely used to distinguish the various components. "Comprises" or "comprising" and similar words mean that the elements or things appearing before the word encompass the elements or things recited after the word and their equivalents, but do not exclude other elements or things. "Inner", "outer", "upper", "lower", etc. are only used to indicate the relative positional relationship, and when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

如图1所示,显示装置可以包括多个阵列排布的像素,多条栅线(例如G1、G2、G3、G4等)、多条数据线(例如D1、D2、D3等)、以及由多个级联设置的移位寄存器构成的栅极驱动电路(GOA)。其中,每个像素包括多个子像素SPX,一列子像素SPX对应一条数据线,一行像素对应一条栅线,多个移位寄存器与各栅线一一对应耦接。在一些实施例中,像素可以包括红色子像素,绿色子像素以及蓝色子像素,这样可以通过红绿蓝进行混色,以实现彩色显示。或者,像素也可以包括红色子像素,绿色子像素、蓝色子像素以及白色子像素,这样可以通过红绿蓝白进行混色,以实现彩色显示。当然,在实际应用中,像素中的子像素的发光颜色可以根据实际应用环境来设计确定,在此不作限定。As shown in FIG. 1 , the display device may include a plurality of pixels arranged in an array, a plurality of gate lines (eg, G 1 , G 2 , G 3 , G 4 , etc.), and a plurality of data lines (eg, D 1 , D 2 , D3 , etc.), and a gate drive circuit (GOA) composed of a plurality of shift registers arranged in cascade. Wherein, each pixel includes a plurality of sub-pixels SPX, a column of sub-pixels SPX corresponds to a data line, a row of pixels corresponds to a gate line, and a plurality of shift registers are coupled to each gate line in a one-to-one correspondence. In some embodiments, the pixels may include red sub-pixels, green sub-pixels and blue sub-pixels, so that red, green and blue colors can be mixed to realize color display. Alternatively, the pixels may also include red sub-pixels, green sub-pixels, blue sub-pixels and white sub-pixels, so that red, green, blue and white can be mixed to achieve color display. Of course, in practical applications, the emission colors of the sub-pixels in the pixels can be designed and determined according to the actual application environment, which is not limited here.

但是,相关技术中的显示装置在进行信赖性测试后,驱动信号输出端在关机阶段不能提供足够的电压打开显示区的晶体管进行残留电荷释放,因此,容易出现残留电荷造成的残留画面,尤其是纯色画面颜色异常,伴随横线不良。However, after the reliability test of the display device in the related art, the driving signal output terminal cannot provide enough voltage to turn on the transistor in the display area to discharge the residual charge during the shutdown stage. The color of the solid color picture is abnormal, accompanied by poor horizontal lines.

为了解决相关技术中存在的上述技术问题,本公开实施例提供了一种移位寄存器,如图2所示,包括:In order to solve the above technical problems existing in the related art, an embodiment of the present disclosure provides a shift register, as shown in FIG. 2 , including:

输入电路101,被配置为响应于输入信号端In的信号,将输入信号端In的信号提供给第一节点Pu;The input circuit 101 is configured to provide the signal of the input signal terminal In to the first node Pu in response to the signal of the input signal terminal In;

驱动输出电路102,至少被配置为响应于第一节点Pu的信号,将时钟信号端Clk的信号作为栅极驱动信号提供给驱动信号输出端Gout;The drive output circuit 102 is at least configured to provide the signal at the clock signal terminal Clk as a gate drive signal to the drive signal output terminal Gout in response to the signal at the first node Pu;

残留电荷释放电路103,被配置为响应于放电信号端V的信号,将第一参考信号端Ref1的第一参考信号提供给驱动信号输出端Gout,第一参考信号的电平与栅极驱动信号的电平相同。The residual charge discharge circuit 103 is configured to provide the first reference signal of the first reference signal terminal Ref1 to the driving signal output terminal Gout in response to the signal of the discharge signal terminal V, and the level of the first reference signal is the same as that of the gate drive. The level of the signal is the same.

在本公开实施例提供的上述移位寄存器中,在每帧显示时间内,通过输入电路101和驱动输出电路102相互配合为驱动信号输出端Gout提供栅极驱动信号,使得栅极驱动信号通过栅线传递至显示区(AA)内的晶体管,晶体管在栅极驱动信号的控制下打开对像素进行充电,实现画面显示。通过增加残留电荷释放电路103,可在关机瞬间为驱动信号输出端Gout提供电平与栅极驱动信号相同的第一参考信号,使得第一参考信号通过栅线传递至显示区内的晶体管,晶体管在第一参考信号的控制下打开,晶体管内的残留电荷得到充分释放,这样在需要进行画面显示时,就不会因残留电荷而产生异常显示。In the above-mentioned shift register provided by the embodiment of the present disclosure, during the display time of each frame, the input circuit 101 and the driving output circuit 102 cooperate with each other to provide a gate driving signal for the driving signal output terminal Gout, so that the gate driving signal passes through the gate The line is transmitted to the transistor in the display area (AA), and the transistor is turned on under the control of the gate driving signal to charge the pixel, so as to realize the picture display. By adding the residual charge discharge circuit 103, the driving signal output terminal Gout can be provided with a first reference signal with the same level as the gate driving signal at the moment of shutdown, so that the first reference signal is transmitted to the transistors in the display area through the gate lines, and the transistors It is turned on under the control of the first reference signal, and the residual charge in the transistor is fully released, so that when a picture needs to be displayed, abnormal display will not occur due to the residual charge.

图3为本公开实施例提供的信赖性运行前后驱动信号输出端的电平曲线对比示意图;图4为相关技术中信赖性运行前后驱动信号输出端的电平曲线对比示意图。其中图3和图4中的实线表示信赖性运行前驱动信号输出端的电平曲线,虚线表示信赖性运行后驱动信号输出端的电平曲线。由图3和图4可见,在信赖性运行后,本公开中驱动信号端的电平约为17v,相较于信赖性运行前的20v仅下降3v,即仅降低6%;相关技术中信赖性运行后驱动信号端的电平约为9v,相较于信赖性运行前的20v下降了11v,即降低55%。因此,本公开相较于相关技术对驱动信号输出端的电平影响较小,利于提供足够的电压打开显示区的晶体管,以充分释放残留电荷。FIG. 3 is a schematic diagram comparing the level curves of the driving signal output terminals before and after reliable operation according to an embodiment of the present disclosure; FIG. 4 is a schematic diagram comparing the level curves of the driving signal output terminals before and after reliable operation in the related art. The solid line in Fig. 3 and Fig. 4 represents the level curve of the output terminal of the driving signal before the reliable operation, and the dashed line represents the level curve of the output terminal of the driving signal after the reliable operation. It can be seen from FIG. 3 and FIG. 4 that after the reliable operation, the level of the driving signal terminal in the present disclosure is about 17v, which is only 3v lower than the 20v before the reliable operation, that is, only reduced by 6%; After operation, the level of the drive signal terminal is about 9v, which is 11v lower than the 20v before reliable operation, that is, 55% lower. Therefore, compared with the related art, the present disclosure has less influence on the level of the output terminal of the driving signal, which is beneficial to provide a sufficient voltage to turn on the transistors in the display area to fully discharge the residual charges.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,如图5至图12所示,放电信号端V包括:至少一个子放电信号端(例如V_1、V_2等),残留电荷释放电路103包括:与子放电信号端(例如V_1、V_2等)一一对应的子放电电路(例如103_1、103_2等),子放电电路(例如103_1、103_2等)被配置为响应于对应的子放电信号端(例如V_1、V_2等)的信号,将第一参考信号提供给驱动信号输出端Gout。In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, as shown in FIG. 5 to FIG. 12 , the discharge signal terminal V includes: at least one sub-discharge signal terminal (eg V_1, V_2, etc.), residual charge The discharge circuit 103 includes: sub-discharge circuits (eg, 103_1, 103_2, etc.) corresponding to the sub-discharge signal terminals (eg, V_1, V_2, etc.) one-to-one, and the sub-discharge circuits (eg, 103_1, 103_2, etc.) are configured to respond to the corresponding sub-discharge circuits (eg, 103_1, 103_2, etc.) The signals of the discharge signal terminals (eg V_1, V_2, etc.) provide the first reference signal to the driving signal output terminal Gout.

在子放电信号端(例如V_1、V_2等)为多个的情况下,各子放电信号端(例如V_1、V_2等)可控制各子放电电路(例如103_1、103_2等)同时工作,以使得第一参考信号在各子放电电路(例如103_1、103_2等)的多重作用下提供给驱动信号输出端Gout,可有效保证驱动信号输出端Gout的电平,从而更利于控制残留电荷充分释放。另外,由于子放电电路(例如103_1、103_2等)越多所需占用的空间越大,不利于实现窄边框设计,因此为兼顾残留电荷释放效果以及窄边框化,本公开中可以设置一个或两个子放电电路(例如103_1和/或103_2)。When there are multiple sub-discharge signal terminals (eg V_1, V_2, etc.), each sub-discharge signal terminal (eg V_1, V_2, etc.) can control each sub-discharge circuit (eg, 103_1, 103_2, etc.) to work at the same time, so that the first A reference signal is provided to the driving signal output terminal Gout under the multiple functions of the sub-discharge circuits (eg 103_1, 103_2, etc.), which can effectively ensure the level of the driving signal output terminal Gout, and is more conducive to controlling the full discharge of residual charges. In addition, since the more sub-discharge circuits (such as 103_1, 103_2, etc.), the more space they need to occupy, which is not conducive to the realization of a narrow frame design. Therefore, in order to take into account the residual charge release effect and the narrow frame, one or two can be set in the present disclosure. individual discharge circuits (eg 103_1 and/or 103_2).

在一些实施例中,在本公开实施例提供的上述移位寄存器中,如图5至图12所示,每个子放电电路(例如103_1或103_2等)包括:第一晶体管M1,第一晶体管M1的栅极与对应的子放电信号端(例如V_1或V_2等)耦接,第一晶体管M1的第一极与第一参考信号端Ref1耦接,第一晶体管M1的第二极与驱动信号输出端Gout耦接。在具体实施时,第一晶体管M1响应于对应的子放电信号端(例如V_1或V_2等)的信号处于导通状态,第一参考信号端Ref1的第一参考信号经导通的第一晶体管M1提供给驱动信号输出端Gout。In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, as shown in FIG. 5 to FIG. 12 , each sub-discharge circuit (eg, 103_1 or 103_2 , etc.) includes: a first transistor M 1 , a first transistor The gate of M1 is coupled to the corresponding sub-discharge signal terminal (eg V_1 or V_2, etc.), the first electrode of the first transistor M1 is coupled to the first reference signal terminal Ref1, and the second terminal of the first transistor M1 The pole is coupled to the driving signal output terminal Gout. In a specific implementation, the first transistor M1 is in a conducting state in response to the signal of the corresponding sub-discharge signal terminal (eg V_1 or V_2, etc.), and the first reference signal of the first reference signal terminal Ref1 is turned on through the first The transistor M1 is provided to the driving signal output terminal Gout.

在一些实施例中,在本公开实施例提供的上述显示装置中,如图6、图8、图11和图12所示,至少部分子放电电路(例如103_1、103_2等)除了包括第一晶体管M1之外,还可以包括:第一电容C1,在同一子放电电路(例如103_1或103_2等)中,第一电容C1耦接在第一晶体管M1的栅极与第一参考信号端Ref1之间。在具体实施时,第一电容C1的自举作用使得第一晶体管M1的栅极电压相比第一参考信号会进一步增大,例如为第一参考信号的1.5倍,有利于第一参考信号在关机瞬间更快速地提供给驱动信号输出端Gout,以增加残留电荷的释放时长,保证残留电荷的释放更加充分。In some embodiments, in the above-mentioned display device provided by the embodiments of the present disclosure, as shown in FIG. 6 , FIG. 8 , FIG. 11 , and FIG. 12 , at least some of the sub-discharge circuits (eg, 103_1 , 103_2 , etc.) include the first transistor in addition to the first transistor. In addition to M 1 , it may further include: a first capacitor C 1 . In the same sub-discharge circuit (eg, 103_1 or 103_2 , etc.), the first capacitor C 1 is coupled to the gate of the first transistor M 1 and the first reference signal between terminals Ref 1 . In a specific implementation, the bootstrap effect of the first capacitor C 1 causes the gate voltage of the first transistor M 1 to further increase compared to the first reference signal, for example, 1.5 times that of the first reference signal, which is beneficial to the first reference signal The signal is provided to the driving signal output terminal Gout more quickly at the moment of shutdown, so as to increase the release time of the residual charge and ensure that the residual charge is released more fully.

以上仅是举例说明本公开实施例提供的子放电电路(例如103_1、103_2等)的具体结构,在具体实施时,子放电电路(例如103_1、103_2等)的具体结构不限于本公开实施例提供的上述结构,还可以是本领域技术人员可知的其他结构,在此不作限定。The above are only examples to illustrate the specific structures of the sub-discharge circuits (eg, 103_1 , 103_2 , etc.) provided by the embodiments of the present disclosure. During specific implementation, the specific structures of the sub-discharge circuits (eg, 103_1 , 103_2 , etc.) are not limited to those provided by the embodiments of the present disclosure. The above structure can also be other structures known to those skilled in the art, which are not limited here.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,如图2、图5至图12所示,还可以包括:复位电路104,至少被配置为响应于初始复位信号端TRst的信号,将第二参考信号端Ref2的信号提供给第一节点Pu。可选地,节约信号端的数量,简化电路设计,至少部分子放电信号端(例如V_1、V_2等)与初始复位信号端TRst和/或第一参考信号端Ref1复用。例如全部子放电信号端(例如V_1和/或V_2等)与第一参考信号端Ref1复用;或者,全部子放电信号端(例如V_1和/或V_2等)与初始复位信号端TRst复用;或者,在子放电信号端的数量为多个的情况下,可以部分子放电信号端(例如V_1)与初始复位信号端TRst复用,其余子放电信号端(例如V_1)与第一参考信号端Ref1复用;或者,部分子放电信号端(例如V_1和/或V_2等)与初始复位信号端TRst和/或第一参考信号端Ref1复用,其余子放电信号端(图中未示出)与初始复位信号端TRst、第一参考信号端Ref1独立设置。当然,在一些实施例中,也可以全部子放电信号端(例如V_1、V_2等)均与初始复位信号端TRst、第一参考信号端Ref1独立设置,在此情况下,可通过芯片(IC)为各子放电信号端(例如V_1、V_2等)统一加载信号,或设置各子放电信号端(例如V_1、V_2等)处于浮空(Floating)状态而不加载任何信号。In some embodiments, the above-mentioned shift register provided by the embodiments of the present disclosure, as shown in FIG. 2 , FIG. 5 to FIG. 12 , may further include: a reset circuit 104 , at least configured to respond to the initial reset signal terminal TRst The signal of the second reference signal terminal Ref 2 is provided to the first node Pu. Optionally, to save the number of signal terminals and simplify circuit design, at least some of the sub-discharge signal terminals (eg V_1, V_2, etc.) are multiplexed with the initial reset signal terminal TRst and/or the first reference signal terminal Ref1. For example, all sub-discharge signal terminals (eg, V_1 and/or V_2, etc.) are multiplexed with the first reference signal terminal Ref 1 ; or, all sub-discharge signal terminals (eg, V_1 and/or V_2, etc.) are multiplexed with the initial reset signal terminal TRst ; Or, when the number of sub-discharge signal terminals is multiple, some of the sub-discharge signal terminals (eg V_1) may be multiplexed with the initial reset signal terminal TRst, and the rest of the sub-discharge signal terminals (eg V_1) and the first reference signal terminal Ref 1 is multiplexed; or, some of the sub-discharge signal terminals (for example, V_1 and/or V_2, etc.) are multiplexed with the initial reset signal terminal TRst and/or the first reference signal terminal Ref 1 , and the rest of the sub-discharge signal terminals (not shown in the figure) are multiplexed. out) and the initial reset signal terminal TRst and the first reference signal terminal Ref 1 are independently set. Of course, in some embodiments, all the sub-discharge signal terminals (such as V_1, V_2, etc.) can also be set independently from the initial reset signal terminal TRst and the first reference signal terminal Ref 1. In this case, the chip (IC ) uniformly load signals for each sub-discharge signal terminal (eg V_1, V_2, etc.), or set each sub-discharge signal terminal (eg V_1, V_2, etc.) in a floating state without loading any signal.

另外,在每帧显示时间t的帧前阶段和帧后阶段,初始复位信号端TRst可输出与关机阶段电平相同的信号,因此,在帧前阶段和帧后阶段,与初始复位信号端TRst复用的子放电信号端(例如V_1、V_2等)对应的子放电电路(例如103_1、103_2等)也处于导通状态,如此,则可通过子放电电路(例如103_1、103_2等)对驱动信号输出端Gout进行放电,防止驱动信号输出端Gout的残留电荷影响显示区画面的正常显示。In addition, in the pre-frame stage and the post-frame stage of each frame display time t, the initial reset signal terminal TRst can output a signal with the same level as the shutdown stage. Therefore, in the pre-frame stage and the post-frame stage, the initial reset signal terminal TRst The sub-discharge circuits (eg, 103_1, 103_2, etc.) corresponding to the multiplexed sub-discharge signal terminals (eg, V_1, V_2, etc.) The output terminal Gout is discharged to prevent the residual charge of the output terminal Gout of the driving signal from affecting the normal display of the picture in the display area.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,如图2、图5至图12所示,复位电路104还被配置为响应于复位信号端Rst的信号,将第二参考信号端Ref2的信号提供给第一节点Pu,并将第一参考信号端Ref1的第二参考信号提供给驱动信号输出端Gout,第二参考信号端Ref2的信号的电平、第二参考信号的电平均与第一参考信号的电平相反。这样就可以通过复位电路104对第一节点Pu和驱动信号输出端Gout进行复位,降低第一节点Pu和驱动信号输出端Gout的噪声。In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, as shown in FIG. 2 , FIG. 5 to FIG. 12 , the reset circuit 104 is further configured to, in response to the signal of the reset signal terminal Rst, reset the second The signal of the reference signal terminal Ref 2 is provided to the first node Pu, and the second reference signal of the first reference signal terminal Ref 1 is provided to the driving signal output terminal Gout, the level of the signal of the second reference signal terminal Ref 2 , the first reference signal The levels of the two reference signals are opposite to those of the first reference signal. In this way, the first node Pu and the driving signal output terminal Gout can be reset through the reset circuit 104, thereby reducing the noise of the first node Pu and the driving signal output terminal Gout.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,如图5至图12所示,复位电路104包括:第二晶体管M2、第三晶体管M3和第四晶体管M4,其中,第二晶体管M2的栅极与初始复位信号端TRst耦接,第二晶体管M2的第一极与第二参考信号端Ref2耦接,第二晶体管M2的第二极与第一节点Pu耦接;第三晶体管M3的栅极与复位信号端Rst耦接,第三晶体管M3的第一极与第二参考信号端Ref2耦接,第三晶体管M3的第二极与第一节点Pu耦接;第四晶体管M4的栅极与复位信号端Rst耦接,第四晶体管M4的第一极与第一参考信号端Ref1耦接,第四晶体管M4的第二极与驱动信号输出端Gout。In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, as shown in FIG. 5 to FIG. 12 , the reset circuit 104 includes: a second transistor M 2 , a third transistor M 3 and a fourth transistor M 4 , wherein the gate of the second transistor M2 is coupled to the initial reset signal terminal TRst, the first pole of the second transistor M2 is coupled to the second reference signal terminal Ref2, and the second pole of the second transistor M2 is coupled to the second reference signal terminal Ref2. The first node Pu is coupled; the gate of the third transistor M3 is coupled to the reset signal terminal Rst, the first pole of the third transistor M3 is coupled to the second reference signal terminal Ref2, and the third transistor M3 The diode is coupled to the first node Pu; the gate of the fourth transistor M4 is coupled to the reset signal terminal Rst, the first electrode of the fourth transistor M4 is coupled to the first reference signal terminal Ref1, and the fourth transistor M4 is coupled to the reset signal terminal Rst. The second pole of 4 is connected to the driving signal output terminal Gout.

在具体实施时,第二晶体管M2响应于初始复位信号端TRst的信号处于导通状态,使得第二参考信号端Ref2的信号通过导通的第二晶体管M2提供给第一节点Pu;第三晶体管M3响应于复位信号端Rst的信号处于导通状态,使得第二参考信号端Ref2的信号通过导通的第三晶体管M3提供给第一节点Pu;第四晶体管M4响应于复位信号端Rst的信号处于导通状态,第一参考信号端Ref1的第二参考信号通过导通的第四晶体管M4提供给驱动信号输出端Gout。In a specific implementation, the second transistor M2 is in a conducting state in response to the signal of the initial reset signal terminal TRst, so that the signal of the second reference signal terminal Ref2 is provided to the first node Pu through the second transistor M2 that is turned on; The third transistor M3 is in a conducting state in response to the signal of the reset signal terminal Rst, so that the signal of the second reference signal terminal Ref2 is supplied to the first node Pu through the third transistor M3 that is turned on; the fourth transistor M4 responds to When the signal at the reset signal terminal Rst is in an on state, the second reference signal at the first reference signal terminal Ref1 is provided to the driving signal output terminal Gout through the turned-on fourth transistor M4.

以上仅是举例说明本公开实施例提供的复位电路104的具体结构,在具体实施时,复位电路104的具体结构不限于本公开实施例提供的上述结构,还可以是本领域技术人员可知的其他结构,在此不作限定。The above is only an example to illustrate the specific structure of the reset circuit 104 provided by the embodiment of the present disclosure. During the specific implementation, the specific structure of the reset circuit 104 is not limited to the above-mentioned structure provided by the embodiment of the present disclosure, and may also be other structures known to those skilled in the art. The structure is not limited here.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,如图2至图10所示,还可以包括至少一个控制电路(例如105_1、105_2等);控制电路(例如105_1、105_2等)被配置为响应于输入信号端In的信号和选择信号端(例如VN_1、VN_2等)的信号,控制第二节点(例如Pd_1、Pd_2等)的电平和第一节点Pu的电平相反,其中,选择信号端(例如VN_1、VN_2等)、第二节点(例如Pd_1、Pd_2等)均与控制电路(例如105_1、105_2等)一一对应;驱动输出电路102还被配置为响应于第二节点(例如Pd_1、Pd_2等)的信号,将第一参考信号端Ref1的第二参考信号提供给驱动信号输出端Gout,第二参考信号的电平与第一参考信号的电平相反,以对驱动信号输出端Gout进行降噪。可选地,控制电路(例如105_1、105_2等)为多个的情况下,各控制电路(例如105_1或105_2等)可在不同时间交替工作,以延长控制电路(例如105_1或105_2等)的寿命,本公开附图中均以两个控制电路(例如105_1或105_2)为例进行示意说明。In some embodiments, the above-mentioned shift register provided by the embodiments of the present disclosure, as shown in FIG. 2 to FIG. 10 , may further include at least one control circuit (eg 105_1 , 105_2 , etc.); control circuits (eg 105_1 , 105_2 , etc.) etc.) is configured to control the level of the second node (eg Pd_1, Pd_2, etc.) to be opposite to the level of the first node Pu in response to the signal of the input signal terminal In and the signal of the selection signal terminal (eg VN_1, VN_2, etc.), The selection signal terminals (eg VN_1, VN_2, etc.) and the second nodes (eg Pd_1, Pd_2, etc.) are in one-to-one correspondence with the control circuits (eg 105_1, 105_2, etc.); the drive output circuit 102 is also configured to respond to the second The signal of the node (such as Pd_1, Pd_2 , etc.) provides the second reference signal of the first reference signal terminal Ref1 to the driving signal output terminal Gout, and the level of the second reference signal is opposite to that of the first reference signal, so as to Noise reduction is performed on the driving signal output terminal Gout. Optionally, when there are multiple control circuits (such as 105_1, 105_2, etc.), each control circuit (such as 105_1 or 105_2, etc.) can work alternately at different times, so as to prolong the life of the control circuits (such as 105_1 or 105_2, etc.) , two control circuits (eg, 105_1 or 105_2 ) are used as examples for schematic illustration in the drawings of the present disclosure.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,如图5至图12所示,每个控制电路(例如105_1或105_2等)包括:第五晶体管M5、第六晶体管M6、第七晶体管M7和第八晶体管M8;第五晶体管M5的栅极、第五晶体管M5的第一极均与对应的选择信号端(例如VN_1或VN_2等)耦接,第五晶体管M5的第二极与第六晶体管M6的第二极耦接;第六晶体管M6的栅极与第一节点Pu耦接,第六晶体管M6的第一极与第二参考信号端Ref2耦接;第七晶体管M7的栅极与输入信号端In耦接,第七晶体管M7的第一极与第二参考信号端Ref2耦接,第七晶体管M7的第二极与对应的第二节点(例如Pd_1或Pd_2等)耦接;第八晶体管M8的栅极与对应的第二节点(例如Pd_1或Pd_2等)耦接,第八晶体管M8的第一极与第二参考信号端Ref2耦接,第八晶体管M8的第二极与第一节点Pu耦接。In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, as shown in FIG. 5 to FIG. 12 , each control circuit (eg, 105_1 or 105_2 , etc.) includes: a fifth transistor M 5 , a sixth transistor M 6 , the seventh transistor M 7 and the eighth transistor M 8 ; the gate of the fifth transistor M 5 and the first pole of the fifth transistor M 5 are all coupled to the corresponding selection signal terminals (eg VN_1 or VN_2, etc.), The second pole of the fifth transistor M5 is coupled to the second pole of the sixth transistor M6 ; the gate of the sixth transistor M6 is coupled to the first node Pu, and the first pole of the sixth transistor M6 is connected to the second pole The reference signal terminal Ref 2 is coupled; the gate of the seventh transistor M 7 is coupled to the input signal terminal In, the first pole of the seventh transistor M 7 is coupled to the second reference signal terminal Ref 2 , and the seventh transistor M 7 The second pole is coupled to the corresponding second node (eg Pd_1 or Pd_2, etc.); the gate of the eighth transistor M8 is coupled to the corresponding second node (eg Pd_1 or Pd_2, etc.), and the gate of the eighth transistor M8 One pole is coupled to the second reference signal terminal Ref2, and the second pole of the eighth transistor M8 is coupled to the first node Pu.

在具体实施时,各第六晶体管M6响应于第一节点Pu的信号处于导通状态,使得第二参考信号端Ref2的信号通过导通的第六晶体管M6分别提供给对应的第二节点(例如Pd_1、Pd_2等);同时各第七晶体管M7响应于输入信号端In的信号处于导通状态,使得第二参考信号端Ref2的信号通过导通的第七晶体管M7分别提供给对应的第二节点(例如Pd_1、Pd_2等);响应于对应的选择信号端(例如VN_1或VN_2等)的信号,各第五晶体管M5中仅一个处于导通状态,将对应选择信号端(例如VN_1或VN_2等)的信号提供给对应的第二节点(例如Pd_1或Pd_2等),但因第六晶体管M6和第七晶体管M7同时将第二参考信号端Ref2的信号提供给第二节点(例如Pd_1或Pd_2等),因此,第二节点(例如Pd_1或Pd_2等)的电平最终取决于第二参考信号端Ref2的信号且与第一节点Pu的电平相反。各第八晶体管M8在第二节点(例如Pd_1、Pd_2等)的控制下处于截止状态。In a specific implementation, each sixth transistor M6 is in a conducting state in response to the signal of the first node Pu, so that the signal of the second reference signal terminal Ref2 is respectively provided to the corresponding second through the sixth transistor M6 that is turned on node (for example, Pd_1, Pd_2, etc.); at the same time, each seventh transistor M7 is in a conducting state in response to the signal of the input signal terminal In, so that the signal of the second reference signal terminal Ref2 is respectively provided through the conducting seventh transistor M7 To the corresponding second node (such as Pd_1, Pd_2, etc.); in response to the signal of the corresponding selection signal terminal (such as VN_1 or VN_2, etc.), only one of the fifth transistors M5 is in a conducting state, and the corresponding selection signal terminal (for example, VN_1 or VN_2, etc.) is provided to the corresponding second node (for example, Pd_1 or Pd_2, etc.), but because the sixth transistor M6 and the seventh transistor M7 simultaneously provide the signal of the second reference signal terminal Ref 2 to The second node (eg Pd_1 or Pd_2 etc.), therefore, the level of the second node (eg Pd_1 or Pd_2 etc.) ultimately depends on the signal of the second reference signal terminal Ref 2 and is opposite to the level of the first node Pu. Each eighth transistor M8 is in an off state under the control of the second node (eg, Pd_1, Pd_2 , etc.).

另外,响应于对应的选择信号端(例如VN_1或VN_2等)的信号,各第五晶体管M5中仅一个处于导通状态,将对应选择信号端(例如VN_1或VN_2等)的信号提供给对应的第二节点(例如Pd_1或Pd_2等),且第六晶体管M6和第七晶体管M7均处于截止状态时,第八晶体管M8中的一个在第二节点(例如Pd_1或Pd_2等)的控制下处于导通状态,第二参考信号端Ref2的信号通过导通的第八晶体管M8提供给第一节点Pu。In addition, in response to the signal of the corresponding selection signal terminal (for example, VN_1 or VN_2, etc.), only one of the fifth transistors M5 is in a conducting state, and the signal of the corresponding selection signal terminal (for example, VN_1 or VN_2, etc.) is provided to the corresponding the second node (eg Pd_1 or Pd_2, etc.), and both the sixth transistor M6 and the seventh transistor M7 are in the off state, one of the eighth transistors M8 is at the second node (eg Pd_1 or Pd_2, etc.) Under control, it is in an on state, and the signal of the second reference signal terminal Ref 2 is provided to the first node Pu through the turned on eighth transistor M 8 .

以上仅是举例说明本公开实施例提供的控制电路(例如105_1或105_2等)的具体结构,在具体实施时,控制电路(例如105_1或105_2等)的具体结构不限于本公开实施例提供的上述结构,还可以是本领域技术人员可知的其他结构,在此不作限定。The above is only an example to illustrate the specific structure of the control circuit (for example, 105_1 or 105_2, etc.) provided by the embodiment of the present disclosure. During specific implementation, the specific structure of the control circuit (for example, 105_1 or 105_2, etc.) is not limited to the above-mentioned provided by the embodiment of the present disclosure. The structure may also be other structures known to those skilled in the art, which are not limited here.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,如图5至图12所示,驱动输出电路102可以包括:第二电容C2、第九晶体管M9、以及与第二节点(例如Pd_1、Pd_2等)一一对应的第十晶体管M10,其中,第二电容C2耦接在第一节点Pu与驱动信号输出端Gout之间;第九晶体管M9的栅极与第一节点Pu耦接,第九晶体管M9的第一极与时钟信号端Clk耦接,第九晶体管M9的第二极与驱动信号输出端Gout耦接;第十晶体管M10的栅极与对应的第二节点(例如Pd_1、Pd_2等)耦接,第十晶体管M10的第一极与第一参考信号端Ref1耦接,第十晶体管M10的第二极与驱动信号输出端Gout耦接。In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, as shown in FIG. 5 to FIG. 12 , the drive output circuit 102 may include: a second capacitor C 2 , a ninth transistor M 9 , and a second capacitor C 2 , a ninth transistor M 9 , and a Two nodes (eg Pd_1, Pd_2, etc.) one-to-one corresponding tenth transistor M 10 , wherein the second capacitor C 2 is coupled between the first node Pu and the driving signal output end Gout; the gate of the ninth transistor M 9 is coupled to the first node Pu, the first pole of the ninth transistor M9 is coupled to the clock signal terminal Clk, the second pole of the ninth transistor M9 is coupled to the driving signal output terminal Gout; the gate of the tenth transistor M10 The pole is coupled to the corresponding second node (eg Pd_1, Pd_2, etc.), the first pole of the tenth transistor M10 is coupled to the first reference signal terminal Ref1, and the second pole of the tenth transistor M10 is connected to the driving signal output The terminal Gout is coupled.

在具体实施时,第九晶体管M9响应于第一节点Pu的信号处于导通状态,使得时钟信号端Clk的信号通过导通的第九晶体管M9提供给驱动信号输出端Gout,在此过程中,第二电容C2的自举作用可以维持第一节点Pu的电平。响应于对应的第二节点(例如Pd_1、Pd_2等)的信号,各第十晶体管M10中仅一个处于导通状态,将第一参考信号端Ref1的第一参考信号或第二参考信号通过导通的第十晶体管M10提供给驱动信号输出端Gout。In a specific implementation, the ninth transistor M9 is in a conducting state in response to the signal of the first node Pu, so that the signal of the clock signal terminal Clk is provided to the driving signal output terminal Gout through the ninth transistor M9 that is turned on. During this process , the bootstrap effect of the second capacitor C 2 can maintain the level of the first node Pu. In response to the signal of the corresponding second node (for example, Pd_1, Pd_2, etc.), only one of the tenth transistors M10 is in a conducting state, passing the first reference signal or the second reference signal of the first reference signal terminal Ref1 through The turned-on tenth transistor M10 is supplied to the driving signal output terminal Gout.

结合图5至图13可见,在关机阶段T,第一参考信号端Ref1的第一参考信号通过导通的第十晶体管M10以及第一晶体管M1提供给驱动信号输出端Gout,相较于仅通过第一晶体管M1为驱动信号输出端Gout提供第一参考信号,可以更好地释放显示区内的残留电荷,进一步提高显示质量。并且,应当理解的是,各第十晶体管M10在第二节点(例如Pd_1、Pd_2等)交替导通工作,因此,第十晶体管M10的数量越多,在一帧时间内每个第十晶体管M10导通的时间越短,越利于维持第十晶体管M10的稳定特性,降低第十晶体管M10的曲线特性漂移的风险。但较多的第十晶体管M10不利于窄边框设计,因此为兼顾第十晶体管M10的性能稳定效果及窄边框化,本公开中可设置两个或三个第十晶体管M105 to 13 , in the shutdown stage T, the first reference signal of the first reference signal terminal Ref 1 is provided to the driving signal output terminal Gout through the turned-on tenth transistor M 10 and the first transistor M 1 . Since the first reference signal is only provided for the driving signal output terminal Gout through the first transistor M1, the residual charge in the display area can be better released, and the display quality can be further improved. Moreover, it should be understood that each tenth transistor M10 is turned on alternately at the second node (for example, Pd_1, Pd_2, etc.). Therefore, the greater the number of tenth transistors M10 is, the more tenth transistors M10 are in one frame time. The shorter the on-time of the transistor M10 is, the more favorable it is to maintain the stable characteristics of the tenth transistor M10 and reduce the risk of drift of the curve characteristic of the tenth transistor M10. However, many tenth transistors M 10 are not conducive to narrow frame design. Therefore, in order to take into account the performance stabilization effect of the tenth transistor M 10 and the narrow frame, two or three tenth transistors M 10 may be provided in the present disclosure.

以上仅是举例说明本公开实施例提供的驱动输出电路102的具体结构,在具体实施时,驱动输出电路102的具体结构不限于本公开实施例提供的上述结构,还可以是本领域技术人员可知的其他结构,在此不作限定。The above is only an example to illustrate the specific structure of the driving output circuit 102 provided by the embodiment of the present disclosure. During specific implementation, the specific structure of the driving output circuit 102 is not limited to the above-mentioned structure provided by the embodiment of the present disclosure, and can also be known by those skilled in the art. Other structures are not limited here.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,如图2、图5至图12所示,还可以包括级联输出电路106,被配置为响应于第一节点Pu的信号,将时钟信号端Clk的信号提供给级联信号输出端Cout,以及响应于第二节点(例如Pd_1、Pd_2等)的信号,将第二参考信号端Ref2的信号提供给级联信号输出端Cout。通过级联输出电路106可实现当前级移位寄存器对下级移位寄存器的级联输出。In some embodiments, the above-mentioned shift register provided by the embodiments of the present disclosure, as shown in FIG. 2 , FIG. 5 to FIG. 12 , may further include a cascaded output circuit 106 configured to respond to the output of the first node Pu. signal, the signal of the clock signal terminal Clk is provided to the cascade signal output terminal Cout, and the signal of the second reference signal terminal Ref 2 is provided to the cascade signal output in response to the signal of the second node (eg Pd_1, Pd_2, etc.) terminal Cout. The cascaded output of the shift register of the current stage to the shift register of the lower stage can be realized by the cascaded output circuit 106 .

在一些实施例中,在本公开实施例提供的上述移位寄存器中,如图5至图12所示,级联输出电路106可以包括:第十一晶体管M11、以及与第二节点(例如Pd_1、Pd_2等)一一对应的第十二晶体管M12,其中,第十一晶体管M11的栅极与第一节点Pu耦接,第十一晶体管M11的第一极与时钟信号端Clk耦接,第十一晶体管M11的第二极与级联信号输出端Cout耦接;第十二晶体管M12的栅极与对应的第二节点(例如Pd_1或Pd_2等)耦接,第十二晶体管M12的第一极与第二参考信号端Ref2耦接,第十二晶体管M12的第二极与级联信号输出端Cout耦接。In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, as shown in FIG. 5 to FIG. 12 , the cascaded output circuit 106 may include: an eleventh transistor M 11 , and a second node (eg, Pd_1, Pd_2, etc.) one-to-one corresponding twelfth transistors M 12 , wherein the gate of the eleventh transistor M 11 is coupled to the first node Pu, and the first pole of the eleventh transistor M 11 is connected to the clock signal terminal Clk Coupling, the second pole of the eleventh transistor M11 is coupled to the cascade signal output terminal Cout; the gate of the twelfth transistor M12 is coupled to the corresponding second node (eg Pd_1 or Pd_2, etc.), the tenth The first poles of the two transistors M12 are coupled to the second reference signal terminal Ref2, and the second poles of the twelfth transistor M12 are coupled to the cascade signal output terminal Cout.

在具体实施时,第十一晶体管M11响应于第一节点Pu的信号处于导通状态,时钟信号端Clk的信号通过导通的第十一晶体管M11提供给级联信号输出端Cout,以为下级移位寄存器提供的输入信号;第十二晶体管M12响应于对应第二节点(例如Pd_1或Pd_2等)的信号处于导通状态,第二参考信号端Ref2的信号通过导通的第十二晶体管M12提供给级联信号输出端Cout,以对级联信号输出端Cout进行降噪。In a specific implementation, the eleventh transistor M11 is in a conducting state in response to the signal of the first node Pu, and the signal of the clock signal terminal Clk is provided to the cascade signal output terminal Cout through the conducting eleventh transistor M11, so as to The input signal provided by the lower-level shift register; the twelfth transistor M 12 is in a conducting state in response to the signal corresponding to the second node (eg, Pd_1 or Pd_2, etc.), and the signal of the second reference signal terminal Ref 2 passes through the conducting tenth The two transistors M12 are provided to the cascaded signal output terminal Cout, so as to perform noise reduction on the cascaded signal output terminal Cout.

以上仅是举例说明本公开实施例提供的级联输出电路106的具体结构,在具体实施时,级联输出电路106的具体结构不限于本公开实施例提供的上述结构,还可以是本领域技术人员可知的其他结构,在此不作限定。The above is only an example to illustrate the specific structure of the cascaded output circuit 106 provided by the embodiment of the present disclosure. During specific implementation, the specific structure of the cascaded output circuit 106 is not limited to the above-mentioned structure provided by the embodiment of the present disclosure, and may also be a technology in the art. Other structures known to personnel are not limited here.

在一些实施例中,在本公开实施例提供的上述移位寄存器中,如图5至图12所示,输入电路101包括第十三晶体管M13,第十三晶体管M13的栅极、第十三晶体管M13的第一极均与输入信号端In耦接,第十三晶体管M13的第二极与第一节点Pu耦接。在具体实施时,第十三晶体管M13响应于输入信号端In的信号处于导通状态,输入信号端In的信号通过导通的第十三晶体管M13提供给第一节点Pu。In some embodiments, in the above-mentioned shift register provided by the embodiments of the present disclosure, as shown in FIG. 5 to FIG. 12 , the input circuit 101 includes a thirteenth transistor M 13 , the gate of the thirteenth transistor M 13 , the The first electrodes of the thirteenth transistors M13 are all coupled to the input signal terminal In, and the second electrodes of the thirteenth transistors M13 are coupled to the first node Pu. In a specific implementation, the thirteenth transistor M13 is in a conducting state in response to the signal of the input signal terminal In, and the signal of the input signal terminal In is provided to the first node Pu through the conducting thirteenth transistor M13.

以上仅是举例说明本公开实施例提供的输入电路101的具体结构,在具体实施时,输入电路101的具体结构不限于本公开实施例提供的上述结构,还可以是本领域技术人员可知的其他结构,在此不作限定。The above is only an example to illustrate the specific structure of the input circuit 101 provided by the embodiment of the present disclosure. During specific implementation, the specific structure of the input circuit 101 is not limited to the above-mentioned structure provided by the embodiment of the present disclosure, and may also be other structures known to those skilled in the art. The structure is not limited here.

为了降低制备工艺,在具体实施时,在本公开实施例提供的移位寄存器中,所有晶体管均可以设置为N型晶体管,N型晶体管在高电平信号(VGH)作用下导通,在低电平信号(VGL)作用下截止。相应地,第一参考信号端Ref1的第一参考信号可以为直流的高电平信号(VGH),第一参考信号端Ref1的第二参考信号可以为直流的低电平信号(VGL),第二参考信号端Ref2的信号可以为直流的低电平信号(VGL)。在一些实施例中,可以使第二参考信号端Ref2的信号小于第二参考信号,这样利于使显示区中的晶体管尽可能完全关断。In order to reduce the manufacturing process, in the specific implementation, in the shift register provided by the embodiments of the present disclosure, all transistors can be set as N-type transistors, and the N-type transistors are turned on under the action of a high-level signal (VGH), and when a low-level signal is used, the N-type transistors are turned on. Cut off under the action of the level signal (VGL). Correspondingly, the first reference signal of the first reference signal terminal Ref 1 may be a DC high level signal (VGH), and the second reference signal of the first reference signal terminal Ref 1 may be a DC low level signal (VGL) , the signal of the second reference signal terminal Ref 2 may be a DC low level signal (VGL). In some embodiments, the signal of the second reference signal terminal Ref 2 can be made smaller than the second reference signal, which is beneficial to turn off the transistors in the display area as completely as possible.

当然,在一些实施例中,本公开提供的所有晶体管也均可以为P型晶体管,P型晶体管在高电平信号(VGH)作用下截止,在低电平信号(VGL)作用下导通。相应地,第一参考信号端Ref1的第一参考信号可以为直流的低电平信号(VGL),第一参考信号端Ref1的第二参考信号可以为直流的高电平信号(VGH),第二参考信号端Ref2的信号可以为直流的高电平信号(VGH)。在一些实施例中,可以使第二参考信号端Ref2的信号大于第二参考信号,这样利于使显示区中的晶体管尽可能完全关断。Of course, in some embodiments, all transistors provided in the present disclosure may also be P-type transistors, and the P-type transistors are turned off under the action of a high-level signal (VGH) and turned on under the action of a low-level signal (VGL). Correspondingly, the first reference signal of the first reference signal terminal Ref 1 may be a DC low level signal (VGL), and the second reference signal of the first reference signal terminal Ref 1 may be a DC high level signal (VGH) , the signal of the second reference signal terminal Ref 2 may be a DC high level signal (VGH). In some embodiments, the signal of the second reference signal terminal Ref 2 can be made larger than the second reference signal, which is beneficial to turn off the transistors in the display area as completely as possible.

需要说明的是,本公开实施例提供的上述晶体管可以是薄膜晶体管(TFT,ThinFilm Transistor),也可以是金属氧化物半导体场效应管(MOS,Metal OxideScmiconductor),在此不作限定。在具体实施中,上述晶体管的栅极可以为栅极,第一极可以为源极,第二极可以为漏极,或者,第一极可以为漏极,第二极可以为源极。It should be noted that the above-mentioned transistors provided in the embodiments of the present disclosure may be thin film transistors (TFT, ThinFilm Transistor) or metal oxide semiconductor field effect transistors (MOS, Metal Oxide Scmiconductor), which is not limited herein. In a specific implementation, the gate of the above transistor may be the gate, the first electrode may be the source electrode, and the second electrode may be the drain electrode, or the first electrode may be the drain electrode and the second electrode may be the source electrode.

在具体实施时,以两个选择信号端(例如VN_1和VN_2)为例,两个选择信号端(例如VN_1和VN_2)的信号可以分别为高电平和低电平切换的脉冲信号,并且,两个选择信号端(例如VN_1和VN_2)的电平相反。在一些实施例中,两个选择信号端(例如VN_1和VN_2)的信号也可以分别为直流信号,并且,其中一个选择信号端加载高电平的直流信号时,另一个选择信号端不加载信号或加载低电平的直流信号。In specific implementation, taking two selection signal terminals (eg VN_1 and VN_2 ) as an example, the signals of the two selection signal terminals (eg VN_1 and VN_2 ) can be pulse signals switched at high level and low level respectively, and the two The levels of the selection signal terminals (eg, VN_1 and VN_2 ) are opposite. In some embodiments, the signals of the two selection signal terminals (eg VN_1 and VN_2 ) may also be DC signals respectively, and when one selection signal terminal is loaded with a high-level DC signal, the other selection signal terminal is not loaded with a signal Or load a low-level DC signal.

下面以各晶体管均为N型晶体管,并以图5所示的移位寄存器的结构为例,结合图13所示的信号时序图,对本公开实施例提供的上述移位寄存器的工作过程作以详细的描述。以下描述中以1表示高电平信号,0表示低电平信号,其中,1和0代表其逻辑电平,仅是为了更好的解释本公开实施例提供的上述移位寄存器的工作过程,而不是在具体实施时施加在各晶体管的栅极上的电位。具体地,选用图13所示的工作时序图中每帧显示时间t、以及关机阶段T为例进行详细描述。并且为保持本公开实施例的以下说明清楚且简明,本公开省略了对在各阶段处于截止状态的晶体管的说明。In the following, each transistor is an N-type transistor, and the structure of the shift register shown in FIG. 5 is taken as an example, combined with the signal timing diagram shown in FIG. detailed description. In the following description, 1 represents a high-level signal, and 0 represents a low-level signal, wherein 1 and 0 represent its logic levels, which are only for better explanation of the working process of the above-mentioned shift register provided by the embodiments of the present disclosure. rather than the potential applied to the gate of each transistor during implementation. Specifically, the display time t of each frame and the shutdown stage T in the working sequence diagram shown in FIG. 13 are used as examples for detailed description. And in order to keep the following description of the embodiments of the present disclosure clear and concise, the present disclosure omits the description of the transistors in the off state at each stage.

在一些实施例中,每帧显示时间t可以包括重置阶段、输入阶段、输出阶段和复位阶段。In some embodiments, each frame display time t may include a reset phase, an input phase, an output phase, and a reset phase.

在重置阶段,In=0,Clk=0,TRst=1,Rst=0,VN_1=1,VN_2=0,Ref1=0,Ref2=0。In the reset phase, In=0, Clk=0, TRst=1, Rst=0, VN_1=1, VN_2=0, Ref 1 =0, Ref 2 =0.

第一晶体管M1响应于初始复位信号端TRst的高电平信号处于导通状态,将第一参考信号端Ref1的低电平信号提供给驱动信号输出端,实现对驱动信号输出端的重置。第二晶体管M2响应于初始复位信号端TRst的高电平信号处于导通状态,第一信号端VGL的低电平信号通过导通的第二晶体管M2提供给第一节点Pu,实现对上拉节点Pu的重置。一个第五晶体管M5响应于选择信号端(例如VN_1)的高电平信号导通状态,将对应选择信号端(例如VN_1)的高电平信号提供给对应的第二节点(例如Pd_1),控制对应的第八晶体管M8处于导通状态,第二参考信号端Ref2的低电平信号通过导通的第八晶体管M8提供给第一节点Pu,实现对第一节点Pu的重置。The first transistor M1 is in a conducting state in response to the high-level signal of the initial reset signal terminal TRst , and provides the low-level signal of the first reference signal terminal Ref1 to the driving signal output terminal to reset the driving signal output terminal. . The second transistor M2 is in a conducting state in response to the high-level signal at the initial reset signal terminal TRst, and the low-level signal at the first signal terminal VGL is provided to the first node Pu through the second transistor M2 that is turned on, so as to realize the The reset of the pull-up node Pu. A fifth transistor M5 provides a high-level signal corresponding to the selection signal terminal (eg VN_1) to the corresponding second node (eg Pd_1 ) in response to the high-level signal conduction state of the selection signal terminal (eg VN_1), The corresponding eighth transistor M8 is controlled to be in an on state, and the low-level signal of the second reference signal terminal Ref2 is provided to the first node Pu through the turned-on eighth transistor M8, so as to reset the first node Pu .

在输入阶段,In=1,Clk=0,TRst=0,Rst=0,VN_1=1,VN_2=0,Ref1=0,Ref2=0。In the input stage, In=1, Clk=0, TRst=0, Rst=0, VN_1= 1 , VN_2= 0 , Ref1=0, Ref2=0.

第十三晶体管M13响应于输入信号端In的高电平信号处于导通状态,输入信号端In的高电平信号经导通的第十三晶体管M13提供给第一节点Pu;各第六晶体管M6响应于第一节点Pu的高电平信号处于导通状态,使得第二参考信号端Ref2的低电平信号通过导通的第六晶体管M6分别提供给对应的第二节点(例如Pd_1、Pd_2等);同时各第七晶体管M7响应于输入信号端In的高电平信号处于导通状态,使得第二参考信号端Ref2的低电平信号通过导通的第七晶体管M7分别提供给对应的第二节点(例如Pd_1、Pd_2等);响应于对应的选择信号端(例如VN_1)的高电平信号,对应的第五晶体管M5导通状态,将该选择信号端(例如VN_1)的高电平信号提供给对应的第二节点(例如Pd_1等),但因第六晶体管M6和第七晶体管M7将第二参考信号端Ref2的低电平信号提供给第二节点(例如Pd_1、Pd_2等),因此,第二节点(例如Pd_1、Pd_2等)的电平最终取决于第二参考信号端Ref2的低电平信号。The thirteenth transistor M13 is in a conducting state in response to the high-level signal of the input signal terminal In, and the high-level signal of the input signal terminal In is provided to the first node Pu through the conducting thirteenth transistor M13; The six transistors M6 are in a conducting state in response to the high-level signal of the first node Pu, so that the low-level signal of the second reference signal terminal Ref2 is respectively provided to the corresponding second node through the sixth transistor M6 that is turned on (eg Pd_1, Pd_2, etc.); at the same time, each seventh transistor M7 is in a conducting state in response to the high-level signal of the input signal terminal In, so that the low-level signal of the second reference signal terminal Ref2 passes through the conducting seventh transistor The transistors M7 are respectively provided to the corresponding second nodes (eg Pd_1, Pd_2 , etc.); in response to the high level signal of the corresponding selection signal terminal (eg VN_1), the corresponding fifth transistor M5 is turned on, and the selection The high level signal of the signal terminal (eg VN_1) is provided to the corresponding second node (eg Pd_1, etc.), but the sixth transistor M6 and the seventh transistor M7 convert the low level signal of the second reference signal terminal Ref2 to the corresponding second node (eg Pd_1, etc.) Provided to the second node (eg Pd_1, Pd_2, etc.), therefore, the level of the second node (eg Pd_1, Pd_2, etc.) ultimately depends on the low-level signal of the second reference signal terminal Ref 2 .

在输出阶段,In=0,Clk=1,TRst=0,Rst=0,VN_1=1,VN_2=0,Ref1=0,Ref2=0。In the output stage, In=0, Clk=1, TRst=0, Rst=0, VN_1=1, VN_2=0, Ref 1 =0, Ref 2 =0.

第九晶体管M9响应于第一节点Pu的高电平信号处于导通状态,使得时钟信号端Clk的高电平信号通过导通的第九晶体管M9提供给驱动信号输出端Gout,作为当前级移位寄存器对应栅线的栅极驱动信号,在此过程中,第二电容C2的自举作用可以维持第一节点Pu的高电平。第十一晶体管M11响应于第一节点Pu的高电平信号处于导通状态,时钟信号端Clk的高电平信号通过导通的第十一晶体管M11提供给级联信号输出端Cout,以为下级移位寄存器提供的输入信号。The ninth transistor M9 is in a conducting state in response to the high-level signal of the first node Pu, so that the high-level signal of the clock signal terminal Clk is provided to the driving signal output terminal Gout through the ninth transistor M9 that is turned on, as the current The stage shift register corresponds to the gate driving signal of the gate line. During this process, the bootstrap effect of the second capacitor C 2 can maintain the high level of the first node Pu. The eleventh transistor M11 is turned on in response to the high-level signal of the first node Pu, and the high-level signal of the clock signal terminal Clk is provided to the cascade signal output terminal Cout through the eleventh transistor M11 that is turned on, Input signal for the lower-level shift register.

在复位阶段,In=0,TRst=0,Rst=1,Ref1=0,Ref2=0,两个选择信号端(例如VN_1和VN_2)交替为1,Clk交替为1和0。In the reset phase, In=0, TRst = 0, Rst= 1 , Ref1=0, Ref2=0, the two selection signal terminals (eg VN_1 and VN_2) are alternately 1, and Clk is alternately 1 and 0.

第三晶体管M3响应于复位信号端Rst的高电平信号处于导通状态,第一信号端VGL的低电平信号通过导通的第三晶体管M3提供给第一节点Pu。响应于选择信号端(例如VN_1或VN_2)的高电平信号,一个第五晶体管M5导通状态,将对应选择信号端(例如VN_1或VN_2)的高电平信号提供给对应的第二节点(例如Pd_1或Pd_2),控制对应的第八晶体管M8处于导通状态,第二参考信号端Ref2的低电平信号通过导通的第八晶体管M8提供给第一节点Pu;同时控制对应的第十晶体管M10处于导通状态,第二参考信号端Ref2的低电平信号通过导通的第十晶体管M10提供给驱动信号输出端Gout;另外还可以控制对的第十二晶体管M12处于导通状态,第二参考信号端Ref2的低电平信号通过导通的第十二晶体管M12提供给级联信号输出端Cout。第四晶体管M4响应于复位信号端Rst的高电平信号处于导通状态,第一参考信号端Ref1的低电平信号通过导通的第四晶体管M4提供给驱动信号输出端Gout。The third transistor M3 is in a conducting state in response to the high-level signal of the reset signal terminal Rst, and the low-level signal of the first signal terminal VGL is supplied to the first node Pu through the turned-on third transistor M3. In response to the high level signal of the selection signal terminal (eg VN_1 or VN_2), a fifth transistor M5 is turned on, and provides the high level signal corresponding to the selection signal terminal (eg VN_1 or VN_2) to the corresponding second node (eg Pd_1 or Pd_2), control the corresponding eighth transistor M8 to be in a conducting state, and the low-level signal of the second reference signal terminal Ref 2 is provided to the first node Pu through the eighth transistor M8 that is turned on; at the same time, controlling The corresponding tenth transistor M10 is in a conducting state, and the low-level signal of the second reference signal terminal Ref 2 is provided to the driving signal output terminal Gout through the tenth transistor M10 that is turned on; in addition, the twelfth pair of The transistor M12 is in a conducting state, and the low-level signal of the second reference signal terminal Ref2 is provided to the cascade signal output terminal Cout through the conducting twelfth transistor M12. The fourth transistor M4 is turned on in response to the high level signal of the reset signal terminal Rst, and the low level signal of the first reference signal terminal Ref1 is supplied to the driving signal output terminal Gout through the turned on fourth transistor M4.

在关机阶段T,In=1,Clk=1,TRst=1,Rst=0,Ref1=1,Ref2=0,VN_1=1,VN_2=1。In the shutdown phase T, In=1, Clk=1, TRst=1, Rst=0, Ref 1 =1, Ref 2 =0, VN_1=1, VN_2=1.

第一晶体管M1响应于子放电信号端(例如V_1,与初始复位信号端TRst复用)的高电平信号处于导通状态,第一参考信号端Ref1的高电平经导通的第一晶体管M1提供给驱动信号输出端Gout,以控制显示区内的晶体管打开,释放残留电荷。第十三晶体管M13响应于输入信号端In的高电平信号处于导通状态,输入信号端In的高电平信号经导通的第十三晶体管M13提供给第一节点Pu,但第二晶体管M2响应于初始复位信号端TRst的高电平信号处于导通状态,第一信号端VGL的低电平信号通过导通的第二晶体管M2提供给第一节点Pu,导致第一节点Pu不能处于高电位。响应于输入信号端In、选择信号端(例如VN_1、VN_2)的高电平信号,各第五晶体管M5导通状态,将对应选择信号端(例如VN_1、VN_2)的高电平信号提供给对应的第二节点(例如Pd_1、Pd_2),但各第七晶体管M7响应于输入信号端In的高电平信号处于导通状态,使得第二参考信号端Ref2的低电平信号通过导通的第七晶体管M7分别提供给对应的第二节点(例如Pd_1、Pd_2等),导致第二节点(例如Pd_1、Pd_2等)不能处于高电位。The first transistor M1 is in a conducting state in response to the high level signal of the sub-discharge signal terminal (for example, V_1, multiplexed with the initial reset signal terminal TRst), and the high level of the first reference signal terminal Ref1 is turned on by the first transistor M1. A transistor M1 is provided to the driving signal output terminal Gout to control the transistors in the display area to be turned on and discharge residual charges. The thirteenth transistor M13 is in a conducting state in response to the high-level signal of the input signal terminal In, and the high-level signal of the input signal terminal In is supplied to the first node Pu through the conducting thirteenth transistor M13, but the The second transistor M2 is in a conducting state in response to the high-level signal of the initial reset signal terminal TRst, and the low-level signal of the first signal terminal VGL is supplied to the first node Pu through the second transistor M2 that is turned on, resulting in the first Node Pu cannot be at high potential. In response to the high-level signals of the input signal terminal In and the selection signal terminals (eg VN_1, VN_2), each fifth transistor M5 is turned on, and the high-level signals corresponding to the selection signal terminals (eg VN_1, VN_2) are provided to The corresponding second node (eg Pd_1, Pd_2), but each seventh transistor M7 is in a conducting state in response to the high-level signal of the input signal terminal In, so that the low-level signal of the second reference signal terminal Ref2 passes through the conduction. The turned-on seventh transistors M7 are respectively provided to the corresponding second nodes (eg Pd_1 , Pd_2 , etc.), so that the second nodes (eg Pd_1 , Pd_2 , etc.) cannot be at a high potential.

需要说明的是,在关机阶段T之后,输入信号端In、时钟信号端Clk、初始复位信号端TRst、复位信号端Rst、第一参考信号端Ref1、第二参考信号端Ref2、选择信号端(例如VN_1、VN_2等)均保持为接地信号GND。It should be noted that, after the shutdown stage T, the input signal terminal In, the clock signal terminal Clk, the initial reset signal terminal TRst, the reset signal terminal Rst, the first reference signal terminal Ref 1 , the second reference signal terminal Ref 2 , the selection signal The terminals (eg VN_1, VN_2, etc.) are all kept as the ground signal GND.

由以上描述可见,与初始复位信号端TRst复用的子放电信号端(例如V_1),在输入阶段、输出阶段和复位阶段为低电平信号,第一晶体管M1处于截止状态,因此,第一晶体管M1不会影响显示品质;并且,在重置阶段初始复位信号端TRst为高电平信号,第一晶体管M1处于导通状态,可对驱动输出信号端Gout进行降噪,从而利于提高显示品质。另外,由于第一晶体管M1的栅极电位在每帧显示时间t的大部分时间内为低电平信号,因此,第一晶体管M1的特性曲线不易发生漂移,从而可保持第一晶体管M1的阈值电压(Vth),解决因第一晶体管M1的阈值电压增大而不能为驱动信号输出端Gout提供足够的电位,可能影响显示区内残留电荷的释放的不良。It can be seen from the above description that the sub-discharge signal terminal (eg V_1) multiplexed with the initial reset signal terminal TRst is a low-level signal in the input stage, output stage and reset stage, and the first transistor M1 is in an off state. Therefore, the first transistor M1 is in an off state. A transistor M1 will not affect the display quality; and, in the reset stage, the initial reset signal terminal TRst is a high-level signal, and the first transistor M1 is in a conducting state, which can reduce noise on the driving output signal terminal Gout, thereby facilitating Improve display quality. In addition, since the gate potential of the first transistor M1 is a low-level signal during most of the display time t of each frame, the characteristic curve of the first transistor M1 is less likely to drift, so that the first transistor M can be maintained. The threshold voltage (V th ) of 1 solves the problem that the threshold voltage of the first transistor M 1 cannot provide sufficient potential for the driving signal output terminal Gout, which may affect the discharge of residual charges in the display area.

在一些实施例中,本公开还提供了图6至图12所示的移位寄存器的工作过程的说明,以下仅对图6至图12所示移位寄存器与图5所示移位寄存器工作过程的不同之处进行介绍,相同之处不再赘述。In some embodiments, the present disclosure also provides descriptions of the working processes of the shift registers shown in FIG. 6 to FIG. 12 . The following only describes the operation of the shift registers shown in FIGS. 6 to 12 and the shift register shown in FIG. 5 . The differences in the process will be introduced, and the similarities will not be repeated.

例如,在图6、图11和图12中,在第一晶体管M1响应于初始化信号端TRst的信号处于导通状态时,耦接在该第一晶体管M1的栅极和第一极之间的第一电容C1可因自举作用,增大第一晶体管M1的栅极电位,使得第一晶体管M1打开更充分。For example, in FIG. 6 , FIG. 11 and FIG. 12 , when the first transistor M1 is in an on state in response to the signal of the initialization signal terminal TRst, the first transistor M1 is coupled between the gate and the first electrode of the first transistor M1 The first capacitor C 1 in between can increase the gate potential of the first transistor M 1 due to the bootstrap effect, so that the first transistor M 1 is more fully turned on.

在图7、图8和图10中,可通过芯片单独为子放电信号端(例如V_1或V_2)提供信号或不为子放电信号端(例如V-1或V_2)加载信号,并且,为了不影响显示,在每帧时间t内,子放电信号端(例如V-1或V_2)的信号需要小于第一参考信号端Ref1的低电平信号。In FIG. 7 , FIG. 8 and FIG. 10 , the sub-discharge signal terminal (eg V_1 or V_2 ) can be provided with a signal or not loaded with a signal for the sub-discharge signal terminal (eg V-1 or V_2 ) through the chip, and, in order not to Influence display, in each frame time t, the signal of the sub-discharge signal terminal (eg V-1 or V_2) needs to be smaller than the low-level signal of the first reference signal terminal Ref1.

另外,在图8和图11中,针对通过芯片单独为子放电信号端(例如V_1或V_2)对应的第一晶体管M1,在其栅极与第一极之间耦接了一个第一电容C1。在该第一晶体管M1处于导通状态时,可因第一电容C1的自举作用,增大该第一晶体管M1的栅极电位,使得该第一晶体管M1打开更充分。In addition, in FIG. 8 and FIG. 11 , for the first transistor M 1 corresponding to the sub-discharge signal terminal (eg V_1 or V_2 ) through the chip alone, a first capacitor is coupled between its gate and the first electrode C 1 . When the first transistor M1 is in an on state, the gate potential of the first transistor M1 can be increased due to the bootstrap effect of the first capacitor C1 , so that the first transistor M1 is more fully turned on.

在图9和图12中,子放电信号端(例如V_1或V_2)与第一参考信号端Ref1复用,使得对应第一晶体管M1可在关机阶段T响应于第一参考信号端Ref1处于导通状态,将第一参考信号端Ref1的第一参考信号提供给驱动信号输出端Gout,对显示区的残留电荷进行释放;并在每帧显示时间t内,因第一参考信号端Ref1一直输出低电平信号,因此,第一晶体管M1在每帧显示时间t内处于截止状态,不会影响显示效果。In FIG. 9 and FIG. 12 , the sub-discharge signal terminal (eg V_1 or V_2 ) is multiplexed with the first reference signal terminal Ref 1 , so that the corresponding first transistor M 1 can respond to the first reference signal terminal Ref 1 in the shutdown stage T In the on state, the first reference signal of the first reference signal terminal Ref 1 is provided to the driving signal output terminal Gout, and the residual charge in the display area is released; and within the display time t of each frame, because the first reference signal terminal Ref 1 always outputs a low level signal, therefore, the first transistor M 1 is in an off state during the display time t of each frame, which will not affect the display effect.

基于同一发明构思,本公开实施例还提供了一种上述移位寄存器的驱动方法,如图14所示,包括以下步骤:Based on the same inventive concept, an embodiment of the present disclosure also provides a method for driving the above shift register, as shown in FIG. 14 , including the following steps:

S1401、输入阶段,输入电路响应于输入信号端的信号,将输入信号端的信号提供给第一节点;S1401. In the input stage, the input circuit responds to the signal at the input signal end and provides the signal at the input signal end to the first node;

S1402、输出阶段,级联输出电路至少响应于第一节点的信号,将时钟信号端的信号作为栅极驱动信号提供给驱动信号输出端;S1402. In the output stage, the cascaded output circuit at least responds to the signal of the first node, and provides the signal of the clock signal terminal as the gate driving signal to the driving signal output terminal;

S1403、关机阶段,残留电荷释放电路响应于放电信号端的信号,将第一参考信号端的第一参考信号提供给驱动信号输出端,第一参考信号的电平与栅极驱动信号的电平相同。S1403 , in the shutdown stage, the residual charge discharge circuit responds to the signal at the discharge signal terminal, and provides the first reference signal at the first reference signal terminal to the drive signal output terminal. The level of the first reference signal is the same as that of the gate drive signal.

基于同一发明构思,本公开实施例提供了一种栅极驱动电路,包括:级联的多个上述移位寄存器;Based on the same inventive concept, an embodiment of the present disclosure provides a gate driving circuit, including: a plurality of the above-mentioned shift registers in cascade;

首级移位寄存器的输入信号端与帧触发信号端耦接;The input signal terminal of the first stage shift register is coupled to the frame trigger signal terminal;

除首级移位寄存器之外,其余各级移位寄存器的输入信号端分别与其相邻的上一级移位寄存器的级联信号输出端耦接;Except for the first stage shift register, the input signal terminals of the other stages of shift registers are respectively coupled to the cascaded signal output terminals of the adjacent previous stage shift registers;

各级移位寄存器的驱动信号输出端与对应行的栅线相连。The drive signal output ends of the shift registers of all levels are connected to the gate lines of the corresponding row.

在一些实施例中,为简化电路设计,本公开提供的栅极驱动电路中各级移位寄存器的结构相同,且各级移位寄存器与信号端的连接关系也相同,具体可参见上述内容,重复之处不再赘述。In some embodiments, in order to simplify the circuit design, the structures of the shift registers of all levels in the gate driving circuit provided by the present disclosure are the same, and the connection relationship between the shift registers of all levels and the signal terminals is also the same. For details, please refer to the above content. Repeat will not be repeated here.

在一些实施例中,在本公开实施例提供的栅极驱动电路中,可采用四条时钟信号线为栅极驱动电路提供时钟信号,可选地,k为正整数,第(4k-3)级移位寄存器单元的时钟信号端Clk均与第一条时钟信号线clk1电连接,第(4k-2)级移位寄存器单元的时钟信号端Clk均与第二条时钟信号线clk2电连接,第(4k-1)级移位寄存器单元的时钟信号端Clk均与第三条时钟信号线clk3电连接,第4k级移位寄存器单元的时钟信号端Clk均与第四条时钟信号线clk4电连接。可选地,第一条时钟信号线clk1提供的时钟信号、第二条时钟信号线clk2提供的时钟信号、第三条时钟信号线clk3提供的时钟信号、第四条时钟信号线clk4提供的时钟信号可以依次相差1/2个相位。In some embodiments, in the gate driving circuit provided by the embodiments of the present disclosure, four clock signal lines may be used to provide clock signals for the gate driving circuit, optionally, k is a positive integer, and the (4k-3)th stage The clock signal terminals Clk of the shift register unit are all electrically connected to the first clock signal line clk 1 , and the clock signal terminals Clk of the (4k-2)th stage shift register unit are all electrically connected to the second clock signal line clk 2 , the clock signal terminals Clk of the (4k-1) stage shift register unit are all electrically connected to the third clock signal line clk 3 , and the clock signal terminals Clk of the 4k stage shift register unit are both electrically connected to the fourth clock signal line clk 4 is electrically connected. Optionally, the clock signal provided by the first clock signal line clk 1 , the clock signal provided by the second clock signal line clk 2 , the clock signal provided by the third clock signal line clk 3 , and the fourth clock signal line clk 4 The provided clock signals can be sequentially shifted by 1/2 phase.

在一些实施例中,在本公开实施例提供的栅极驱动电路中,每一级移位寄存器的第一参考信号端Ref1均与同一第一参考线电连接,每一级移位寄存器的第二参考信号端Ref2均与同一第二参考线电连接,每一级移位寄存器的初始复位信号端TRst均与同一初始复位线电连接。In some embodiments, in the gate driving circuit provided by the embodiments of the present disclosure, the first reference signal terminal Ref 1 of each stage of the shift register is electrically connected to the same first reference line, and the The second reference signal terminals Ref 2 are all electrically connected to the same second reference line, and the initial reset signal terminal TRst of each stage of the shift register is electrically connected to the same initial reset line.

基于同一发明构思,本公开实施例还提供了一种显示装置,包括本公开实施例提供的上述栅极驱动电路。在一些实施例中,该显示装置可以为:手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪、智能手表、健身腕带、个人数字助理等任何具有显示功能的产品或部件。该显示装置包括但不限于:射频单元、网络模块、音频输出&输入单元、传感器、显示单元、用户输入单元、接口单元、存储器、处理器、以及电源等部件。另外,本领域技术人员可以理解的是,上述结构并不构成对本公开实施例提供的上述显示装置的限定,换言之,在本公开实施例提供的上述显示装置中可以包括上述更多或更少的部件,或者组合某些部件,或者不同的部件布置。尽管本公开已描述了优选实施例,但应当理解的是,本领域的技术人员可以对本公开实施例进行各种改动和变型而不脱离本公开实施例的精神和范围。这样,倘若本公开实施例的这些修改和变型属于本公开权利要求及其等同技术的范围之内,则本公开也意图包含这些改动和变型在内。Based on the same inventive concept, an embodiment of the present disclosure further provides a display device including the above gate driving circuit provided by the embodiment of the present disclosure. In some embodiments, the display device may be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, a smart watch, a fitness wristband, a personal digital assistant, etc. . The display device includes but is not limited to: a radio frequency unit, a network module, an audio output & input unit, a sensor, a display unit, a user input unit, an interface unit, a memory, a processor, and a power supply and other components. In addition, those skilled in the art can understand that the above structure does not constitute a limitation on the above-mentioned display device provided by the embodiment of the present disclosure. In other words, the above-mentioned display device provided by the embodiment of the present disclosure may include more or less of the above-mentioned components, or a combination of certain components, or a different arrangement of components. Although the present disclosure has described the preferred embodiments, it should be understood that various changes and modifications can be made to the embodiments of the present disclosure by those skilled in the art without departing from the spirit and scope of the embodiments of the present disclosure. Thus, provided that these modifications and variations of the embodiments of the present disclosure fall within the scope of the claims of the present disclosure and their equivalents, the present disclosure is also intended to cover such modifications and variations.

Claims (16)

1. A shift register, comprising:
an input circuit configured to supply a signal of an input signal terminal to a first node in response to a signal of the input signal terminal;
a driving output circuit at least configured to provide a signal of a clock signal terminal as a gate driving signal to a driving signal output terminal in response to a signal of the first node;
a residual charge discharging circuit configured to provide a first reference signal of a first reference signal terminal to the driving signal output terminal in response to a signal of a discharging signal terminal, a level of the first reference signal being the same as a level of the gate driving signal.
2. The shift register of claim 1, wherein the discharge signal terminal comprises: at least one sub-discharge signal terminal, the residual charge discharging circuit comprising: sub-discharge circuits in one-to-one correspondence with the sub-discharge signal terminals, the sub-discharge circuits being configured to supply the first reference signal to the driving signal output terminal in response to a signal of the corresponding sub-discharge signal terminal.
3. The shift register of claim 2, wherein the sub-discharge circuit comprises: a gate of the first transistor is coupled to the corresponding sub-discharge signal terminal, a first pole of the first transistor is coupled to the first reference signal terminal, and a second pole of the first transistor is coupled to the driving signal output terminal.
4. The shift register of claim 3, wherein at least some of the sub-discharge circuits further comprise: and a first capacitor, wherein in the same sub-discharge circuit, the first capacitor is coupled between the gate of the first transistor and the first reference signal terminal.
5. The shift register according to any one of claims 2 to 4, further comprising: a reset circuit configured to supply a signal of a second reference signal terminal to the first node at least in response to a signal of an initial reset signal terminal;
at least part of the sub-discharge signal terminals are multiplexed with the initial reset signal terminal and/or the first reference signal terminal, or all the sub-discharge signal terminals are independently arranged with the initial reset signal terminal and the first reference signal terminal.
6. The shift register of claim 5, wherein the reset circuit is further configured to supply a signal of the second reference signal terminal to the first node and supply a second reference signal of the first reference signal terminal to the driving signal output terminal in response to a signal of a reset signal terminal, a level of the signal of the second reference signal terminal and a level of the second reference signal being opposite to a level of the first reference signal.
7. The shift register of claim 6, wherein the reset circuit comprises: a second transistor, a third transistor, and a fourth transistor, wherein,
a gate of the second transistor is coupled to the initial reset signal terminal, a first pole of the second transistor is coupled to the second reference signal terminal, and a second pole of the second transistor is coupled to the first node;
a gate of the third transistor is coupled to the reset signal terminal, a first pole of the third transistor is coupled to the second reference signal terminal, and a second pole of the third transistor is coupled to the first node;
a gate of the fourth transistor is coupled to the reset signal terminal, a first pole of the fourth transistor is coupled to the first reference signal terminal, and a second pole of the fourth transistor is coupled to the driving signal output terminal.
8. The shift register according to any one of claims 1 to 4, 6 and 7, further comprising at least one control circuit;
the control circuit is configured to respond to a signal of the input signal terminal and a signal of a selection signal terminal, and control the level of a second node to be opposite to the level of the first node, wherein the selection signal terminal and the second node are in one-to-one correspondence with the control circuit;
the driving output circuit is further configured to provide a second reference signal of the first reference signal terminal to the driving signal output terminal in response to a signal of the second node, the second reference signal having a level opposite to that of the first reference signal.
9. The shift register of claim 8, wherein the control circuit comprises: a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor;
a gate of the fifth transistor and a first pole of the fifth transistor are both coupled to the corresponding selection signal terminal, and a second pole of the fifth transistor is coupled to a second pole of the sixth transistor;
a gate of the sixth transistor is coupled to the first node, and a first pole of the sixth transistor is coupled to the second reference signal terminal;
a gate of the seventh transistor is coupled to the input signal terminal, a first pole of the seventh transistor is coupled to the second reference signal terminal, and a second pole of the seventh transistor is coupled to the corresponding second node;
a gate of the eighth transistor is coupled to the corresponding second node, a first pole of the eighth transistor is coupled to the second reference signal terminal, and a second pole of the eighth transistor is coupled to the first node.
10. The shift register of claim 8, wherein the drive output circuit comprises: a second capacitor, a ninth transistor, and a tenth transistor in one-to-one correspondence with the second node, wherein,
the second capacitor is coupled between the first node and the driving signal output end;
a gate of the ninth transistor is coupled to the first node, a first pole of the ninth transistor is coupled to the clock signal terminal, and a second pole of the ninth transistor is coupled to the driving signal output terminal;
a gate of the tenth transistor is coupled to the corresponding second node, a first pole of the tenth transistor is coupled to the first reference signal terminal, and a second pole of the tenth transistor is coupled to the driving signal output terminal.
11. The shift register of claim 8, further comprising a cascade output circuit configured to supply a signal of the clock signal terminal to a cascade signal output terminal in response to a signal of the first node, and to supply a signal of a second reference signal terminal to the cascade signal output terminal in response to a signal of the second node.
12. The shift register of claim 11, wherein the cascade output circuit comprises: an eleventh transistor, and a twelfth transistor in one-to-one correspondence with the second node, wherein,
a gate of the eleventh transistor is coupled to the first node, a first pole of the eleventh transistor is coupled to the clock signal terminal, and a second pole of the eleventh transistor is coupled to the cascade signal output terminal;
a gate of the twelfth transistor is coupled to the corresponding second node, a first pole of the twelfth transistor is coupled to the second reference signal terminal, and a second pole of the twelfth transistor is coupled to the cascade signal output terminal.
13. A shift register as claimed in any one of claims 1 to 4, 6, 7 and 9 to 12, wherein said input circuit includes a thirteenth transistor, a gate of said thirteenth transistor, a first pole of said thirteenth transistor being coupled to said input signal terminal, a second pole of said thirteenth transistor being coupled to said first node.
14. A gate drive circuit, comprising: a plurality of cascaded shift registers as claimed in any one of claims 1 to 13;
the input signal end of the first stage shift register is coupled with the frame trigger signal end;
except the first stage shift register, the input signal ends of the other shift registers are respectively coupled with the cascade signal output end of the adjacent shift register of the previous stage;
and the driving signal output end of each stage of shift register is connected with the grid line of the corresponding row.
15. A display device comprising the gate driver circuit according to claim 14.
16. A method of driving a shift register according to any one of claims 1 to 13, comprising:
an input stage, wherein an input circuit responds to a signal of an input signal end and provides the signal of the input signal end to a first node;
in the output stage, the cascade output circuit at least responds to the signal of the first node and provides the signal of the clock signal end as a grid drive signal to a drive signal output end;
in the shutdown stage, the residual charge releasing circuit responds to a signal of a discharging signal end and provides a first reference signal of a first reference signal end to the driving signal output end, and the level of the first reference signal is the same as that of the grid driving signal.
CN202210591500.1A 2022-05-27 2022-05-27 Shift register, driving method thereof, gate driving circuit and display device Pending CN114882826A (en)

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CN107492338A (en) * 2017-10-13 2017-12-19 京东方科技集团股份有限公司 A kind of gate driving circuit and display device
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CN109147641A (en) * 2018-09-10 2019-01-04 合肥鑫晟光电科技有限公司 Power-off ghost shadow eliminates circuit, shift register cell and display device
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