CN1148876C - Fast locking double-track digital delay phase-locked circuit - Google Patents
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本发明关于一种数字电路设计,特别是关于一种具有相位校正电路(phase alignment circuit)的数字电路设计。The present invention relates to a digital circuit design, in particular to a digital circuit design with a phase alignment circuit.
参考数据美国专利文件:美国专利号6,060,928;美国专利号6,144,713;美国专利号6,166,572;以及美国专利号6,125,157。REFERENCE DATA US Patent Documents: US Patent No. 6,060,928; US Patent No. 6,144,713; US Patent No. 6,166,572; and US Patent No. 6,125,157.
延迟锁相电路(delayed locked loop)通常使用于高速相位校正电路,例如双数据速率同步动态随机存取存储器DDR SDRAM。在使用DDR SDRAM作为记忆储存装置的系统中,需要一数据选通脉冲相位控制(data strobe phasecontrol)以锁定(latch)被DDR SDRAM(以下称为DDR)送回的读取数据。DDR在每个时钟脉冲边缘送出数据脉冲与数据,因此称为“边缘校准”(edgealigned);而当DDR在每个时钟脉冲中央执行写入数据脉冲与数据,因此称为“中央校准”(center-aligned)。这种分别针对读取与写入以不同时钟脉冲位置触发的方法,是为了在DDR制造时简化设计与得到更佳的优良率。因此,当DDR执行写入周期时,系统必须产生一准确的四分的一延迟以用于中央校准脉冲与数据。Delayed locked loops are usually used in high-speed phase correction circuits, such as double data rate synchronous dynamic random access memory DDR SDRAM. In a system using DDR SDRAM as a memory storage device, a data strobe phase control (data strobe phase control) is required to lock (latch) the read data sent back by DDR SDRAM (hereinafter referred to as DDR). DDR sends data pulses and data on the edge of each clock pulse, so it is called "edge aligned"; and when DDR performs writing data pulses and data in the center of each clock pulse, it is called "central alignment" (center -aligned). This method of triggering with different clock pulse positions for reading and writing is to simplify the design and obtain better yield during DDR manufacturing. Therefore, when the DDR performs a write cycle, the system must generate an exact quarter-one delay for the center alignment pulse and data.
图1表示一典型的双轨式数字延迟锁相电路(DLL)电路。相位检测器130将ext_clk信号与由T/4延迟电路115所产生的delay_clk信号比较。延迟电路监控器140响应来自相位检测器130的increment_or_decrement(递增或递减)信号,输出delay_control_number(延迟_控制_数)信号至延迟电路115及116以调整延迟量。最后系统收敛并且获得T/4延迟时钟(delay clock)150。然而,来自相位检测器130的结果可能因温度的变化而漂移,导致延迟电路监控器140向T/4延迟电路115以及116提供不适当的信息。而且,过程变化也可能影响相位检测器130的结果。因此,本发明提出一具有双锁定机理以及动态延迟控制的数字延迟锁相电路电路以解决上述的问题。应注意的是,本发明可产生任何希望的延迟信号。所以本发明可以使用在任何使用DLL机构的电路中。Figure 1 shows a typical dual-rail digital delay-locked (DLL) circuit. The phase detector 130 compares the ext_clk signal with the delay_clk signal generated by the T/4 delay circuit 115 . The delay circuit monitor 140 responds to the increment_or_decrement (increment or decrement) signal from the phase detector 130, and outputs a delay_control_number (delay_control_number) signal to the delay circuits 115 and 116 to adjust the delay amount. Finally the system converges and a T/4 delay clock 150 is obtained. However, the results from phase detector 130 may drift due to changes in temperature, causing delay circuit monitor 140 to provide inappropriate information to T/4 delay circuits 115 and 116 . Furthermore, process variations may also affect the phase detector 130 results. Therefore, the present invention proposes a digital delay-locked circuit with dual-lock mechanism and dynamic delay control to solve the above-mentioned problems. It should be noted that the present invention may generate any desired delayed signal. So the present invention can be used in any circuit using DLL mechanism.
本发明提供一使用双轨式数字延迟锁相电路(DLL)的准确的时间延迟发生器。此双轨式数字DLL包括第一延迟电路、第二延迟电路、延迟单元、第一相位检测器、第二相位检测器、延迟电路监控器、数字时间转换器(DTC)延迟单元。The present invention provides an accurate time delay generator using a dual-rail digital delay-locked circuit (DLL). The dual-rail digital DLL includes a first delay circuit, a second delay circuit, a delay unit, a first phase detector, a second phase detector, a delay circuit monitor, and a digital time converter (DTC) delay unit.
第一延迟电路接收外部时钟信号以及第一延迟控制信号,以产生第一延迟信号。并且第二延迟电路接收第二延迟控制信号以及外部时钟信号,以产生第二延迟信号。延迟单元使用外部时钟信号、第一延迟信号以及第二延迟信号,以产生内部延迟信号。第一相位检测器接收内部延迟信号以及第一延迟信号,以产生第一控制信号;而第二相位检测器使用内部延迟信号以及第二延迟信号,以产生第二控制信号。延迟电路监控器响应第一以及第二控制信号,而产生第一延迟控制信号以及第二延迟控制信号。延迟信号由DTC延迟单元所产生,其中DTC延迟单元的输入为外部时钟信号以及第一延迟控制信号。The first delay circuit receives an external clock signal and a first delay control signal to generate a first delay signal. And the second delay circuit receives the second delay control signal and the external clock signal to generate the second delay signal. The delay unit uses the external clock signal, the first delay signal and the second delay signal to generate the internal delay signal. The first phase detector receives the internal delay signal and the first delay signal to generate a first control signal; and the second phase detector uses the internal delay signal and the second delay signal to generate a second control signal. The delay circuit monitor generates a first delay control signal and a second delay control signal in response to the first and second control signals. The delay signal is generated by a DTC delay unit, wherein the input of the DTC delay unit is an external clock signal and a first delay control signal.
本发明提供一双轨式延迟锁相电路,以产生希望的延迟信号。在此所介绍的双轨式DLL设计根据电压及温度的变化而动态地改变DTC延迟单元的延迟。在此提供的电路可应用于任何高速相位校正系统中,并且延迟量可以经引入N个DTC延迟单元至延迟电路,而被扩展为1/N周期的时间。The present invention provides a dual-rail delay-locked circuit to generate desired delayed signals. The dual-rail DLL design presented here dynamically changes the delay of the DTC delay unit in response to changes in voltage and temperature. The circuit provided here can be applied to any high-speed phase correction system, and the delay amount can be extended to 1/N cycle time by introducing N DTC delay units into the delay circuit.
图1表示一公知的DLL电路,可产生一T/4延迟时钟。Fig. 1 shows a known DLL circuit which can generate a T/4 delayed clock.
图2表示一根据本发明设计的双轨式DLL电路,其可产生一T/N延迟时钟。FIG. 2 shows a dual-rail DLL circuit designed according to the present invention, which can generate a T/N delayed clock.
图3表示如图2中的DTC延迟单元的具体实施例。FIG. 3 shows a specific embodiment of the DTC delay unit as in FIG. 2 .
图4表示一根据本发明设计的双轨式DLL电路,其可产生一T/4延迟时钟。FIG. 4 shows a dual-rail DLL circuit designed according to the present invention, which can generate a T/4 delayed clock.
图5表示双轨式DLL电路的锁定实例。Figure 5 shows an example of locking for a dual-rail DLL circuit.
图6表示双轨式DLL电路的领先实例。Figure 6 shows a leading example of a dual-rail DLL circuit.
图7表示双轨式DLL电路的落后实例。Figure 7 shows a backward example of a dual-rail DLL circuit.
图8表示一DTC延迟单元因过程变化所产生的非线性特性。Figure 8 shows the non-linear behavior of a DTC delay cell due to process variations.
图9表示一具有4 DTC延迟单元的延迟电路,因过程变化所产生的非线性特性。Figure 9 shows a delay circuit with 4 DTC delay units, the non-linear characteristics due to process changes.
参阅图2,其表示一根据本发明设计的双轨式DLL电路,可产生一T/N延迟时钟,其中T是一时钟周期时间(clock cycle time)以及N是一预定的数目。本发明的双轨式DLL电路包括:第一延迟电路200、第二延迟电路220、延迟单元,优选为一半分辨率(half-resolution)延迟单元235、第一相位检测器245、第二相位检测器255、延迟电路监控器265以及DTC延迟单元270。Referring to FIG. 2, it shows a dual-rail DLL circuit designed according to the present invention, which can generate a T/N delayed clock, where T is a clock cycle time and N is a predetermined number. The dual-rail DLL circuit of the present invention includes: a first delay circuit 200, a second delay circuit 220, a delay unit, preferably a half-resolution delay unit 235, a first phase detector 245, and a second phase detector 255 , a delay circuit monitor 265 and a DTC delay unit 270 .
第一延迟电路200,响应外部时钟信号(ext_clk)以及第一延迟控制信号210,而产生第一延迟信号215。第二延迟电路响应第二延迟控制信号225以及(ext_clk)220,而产生第二延迟信号230。优选为第一延迟电路200以及第二延迟电路220分别具有N个DTC延迟单元,其中N是一预定的数目。半分辨率延迟单元235响应(ext_clk),而产生一内部延迟信号240。优选为半分辨率延迟单元235进一步响应第一延迟信号215以及第二延迟信号230。第一相位检测器245将内部延迟信号240与第一延迟信号215比较,以产生第一控制信号250。The first delay circuit 200 generates a
第二相位检测器255比较内部延迟信号240与第二延迟信号230,以产生第二控制信号260。延迟电路监控器265响应第一以及第二控制信号(250及260),产生第一延迟控制信号210以及第二延迟控制信号225。关于延迟电路监控器265的进一步功能的说明,请参考关于图4的说明。DTC延迟单元270响应(ext_clk)以及第一延迟控制信号210,产生延迟信号275。The second phase detector 255 compares the internal delay signal 240 with the
图3表示DTC延迟单元如何转化4位延迟控制数字输入305为延迟信号输出310。DTC延迟单元包括一数字延迟数目编码器320。数字延迟数目编码器320接收4位延迟控制数字输入305并且产生D0、D1...至D15信号,在DTC延迟单元中总共有16延迟刻度(Tscale),当D(n)=1,表示一对应的延迟存在。因此,DTC延迟单元根据4位延迟控制数字输入305接收输入信号315以及输出延迟信号输出310。FIG. 3 shows how the DTC delay unit converts the 4-bit delay control digital input 305 into a delayed signal output 310 . The DTC delay unit includes a digital delay number encoder 320 . Digital delay number encoder 320 receives 4-bit delay control digital input 305 and generates signals from D0, D1... to D15. There are 16 delay scales (Tscale) in DTC delay unit. When D(n)=1, it means a A corresponding delay exists. Thus, the DTC delay unit receives the input signal 315 and outputs the delayed signal output 310 according to the 4-bit delay control digital input 305 .
请参考图4。在本发明的较佳实施例中,在第一延迟电路400以及第二延迟电路420中的DTC延迟单元的数目分别等于4。亦即N=4。第一延迟电路400响应具有k值的第一延迟控制信号(delay_control_count)以及ext_clk信号,而产生第一延迟信号(delay_clk(k)),其至少为k的函数。第二延迟电路420响应具有k+1值的第二延迟控制信号(delay_control_count_1)以及ext_clk信号,而产生第二延迟信号(delay_clk(k+1)),其至少为(k+1)的函数。delay_clk(k)以及delay_clk(k+1)的时间差定义为一最小的分辨率Tres,其亦是第一延迟电路400以及第二延迟电路420的最小分辨率。所以delay_clk(k)比delay_clk(k+1)超前一Tres。Please refer to Figure 4. In a preferred embodiment of the present invention, the number of DTC delay units in the
再者,由半分辨率延迟单元435所产生的内部延迟信号(int_clk)比ext_clk延迟一1/2Tres。第一相位检测器445比较int_clk与delay_clk(k),并且输出第一控制信号(递减);第二相位检测器455比较int_clk与delay_clk+1,并且输出第二控制信号(递增)。在较佳的实施例中,第一相位检测器445以及第二相位检测器455分别为D触发器(D-flip-flop)。Furthermore, the internal delay signal (int_clk) generated by the half-
为了使第一相位检测器445以及第二相位检测器455正确地锁定delay_clk(k)以及delay_clk(k+1),int_clk应落在delay_clk(k)以及delay_clk(k+1)之间。有必要提供足够的设置时间(Tsetup)至第一相位检测器445,以及足够的维持时间(Thold)至第二相位检测器455。因此,Tres应该比Tsetup及Thold的总和为大。亦即,Tres≥(Tsetup+Thold)。然而,已知在大多数的实例中,Tsetup比Thold大。所以,在较佳实施例中,设定:In order for the
Tres≥2*Tsetup………方程式(1)。Tres≥2*Tsetup...Equation (1).
在本发明的一较佳实施例中,所有在第一延迟电路400以及第二延迟电路420中的DTC延迟单元都是一样的。DTC延迟单元的最小的分辨率Tres由上述D触发器的两倍Tsetup所定义。若D触发器的Tsetup为0.2ns(纳秒),则可选择Tres为0.5ns,其大于2*Tsetup,并且由半分辨率延迟单元所产生的延迟是0.25ns。In a preferred embodiment of the present invention, all the DTC delay units in the
参考图5。当delay_clk(k)与ext_clk校准,即符合锁定的情况。delay_clk(k)正好比ext_clk晚一个时钟周期,以及delay_clk(k+1)比ext_clk晚一个时钟周期加上Tres。在锁定的情况下,第一相位检测器445设定减少量信号为0,而且第二相位检测器455设定增加量信号为0。则延迟电路监控器465不会改变delay_control_count以及delay_control_count_1的值。Refer to Figure 5. When delay_clk(k) is calibrated with ext_clk, it is locked. delay_clk(k) is exactly one clock cycle later than ext_clk, and delay_clk(k+1) is one clock cycle later than ext_clk plus Tres. In the locked condition, the
DTC延迟单元470响应ext_clk以及delay_control_count,产生延迟信号475。因此,在N=4的范例中,可从DTC延迟单元470中获得一个四分的一周期延迟时钟信号475。The
如图6所示的领先实例中,delay_clk(k)领先ext_clk少于一个时钟周期的量。在领先的实例中,第一相位检测器445设定减少量信号为0,以及第二相位检测器455设定增加量信号为1。则延迟电路监控器465以1为增量,分别增加delay_control_count以及delay_control_count_1的值。第一延迟电路400响应ext_clk以及delay_control_count,产生delay_clk(k)。第二延迟电路420响应ext_clk以及delay_control_count_1,产生delay_clk(k+1)。因此第一延迟电路400以及第二延迟电路420的延迟增加。若delay_clk(k)仍然领先ext_clk少于一个时钟周期的量,则双轨式DLL电路继续上述的步骤,直到达到如图5所示的锁定实例为止。In the leading example shown in Figure 6, delay_clk(k) leads ext_clk by less than one clock cycle. In the leading example, the
对于如图7所示落后实例,delay_clk(k)落后ext_clk少于一个时钟周期的量。在落后的实例中,第一相位检测器445设定减少量信号为1,并且第二相位检测器455设定增加量信号为0。则延迟电路监控器465以1为减少量,减少delay_control_count以及delay_control_count_1的值。第一延迟电路400响应ext_clk以及delay_control_count,产生delay_clk(k)。第二延迟电路420响应ext_clk以及delay_control_count_1,产生delay_clk(k+1)。因此,第一延迟电路400以及第二延迟电路420的延迟减少。若delay_clk(k)仍然落后ext_clk少于一个时钟周期的量,则双轨式DLL电路继续上述的步骤,直到达到如图5所示的锁定实例为止。For the lag example shown in Figure 7, delay_clk(k) lags ext_clk by an amount less than one clock cycle. In the backward example, the
此外,若在DTC延迟单元的电路部分中有非线性特性,并不会影响系统的收敛。因为两延迟电路400及420是对称电路结构,两者随着过程、温度、及供电电压的变动而以同样的方式以及百分比变化。图8表示一发生在延迟控制数字输入305的8(即1000)至9(即1001)范围的单一DTC单元的延迟刻度(Tscale)的非线性特性。Tscale的值从0.125ns改变至0.25ns,导致一非线性情况。据此,如图9所示第一延迟电路400以及第二延迟电路420的最小分辨率(即Tres)从0.5ns变化至1ns。Int_clk相对于ext_clk有一0.25ns的漂移。因此int_clk仍然落在delay_clk(k)以及delay_clk(k+1)之间,并且双轨式DLL电路可以允许PVT(过程、电压、温度)变化。In addition, if there are nonlinear characteristics in the circuit part of the DTC delay unit, it will not affect the convergence of the system. Because the two
此外,双轨式数字DLL设计可以容易地产生T/N时间延迟,其中N分别是在第一延迟电路400以及第二延迟电路420中DTC延迟单元的数目,而T是时钟周期时间。参考图3的实施例,假设在本发明的单一DTC延迟单元不是具有16延迟刻度,而是具有L个Tscales。则以下所推得的方程式满足锁定的情况,如方程式(2)所示。In addition, the dual-rail digital DLL design can easily generate T/N time delays, where N is the number of DTC delay units in the
T=Tscale*L*N………方程式(2)。T=Tscale*L*N...Equation (2).
则,Tres=delay_clk(K+1)-delay_clk(K)=Tscale*(K+1)*N-Tscale*L*N=Tscale*N………方程式(3)。Then, Tres=delay_clk(K+1)-delay_clk(K)=Tscale*(K+1)*N-Tscale*L*N=Tscale*N...Equation (3).
从上述的方程式(1)、(2)以及(3),当锁定情况发生时,T=L*Tres≥2L*Tsetup………方程式(4)。From the above equations (1), (2) and (3), when the locked situation occurs, T=L*Tres≥2L*Tsetup...Equation (4).
从方程式(2),Tscale≥(2/N)*Tsetup………方程式(5)。From equation (2), Tscale≥(2/N)*Tsetup...Equation (5).
在一较佳实施例中,假设Tsetup=0.2ns,则从方程式(1)可选择Tres为0.5ns,如果目标周期时间(T)为7.5ns(即实时钟频率133MHz),从方程式(4)中可以选择L=15。In a preferred embodiment, assuming that Tsetup=0.2ns, then from equation (1), Tres can be selected as 0.5ns, if the target cycle time (T) is 7.5ns (i.e. real clock frequency 133MHz), from equation (4) L = 15 can be selected in .
在另一较佳实施例中,假设在方程式(5)中N=4,如果选择Tsetup为0.2ns,则Tscale≥0.5*Tsetup=0.1ns。因此Tscale应大于0.1ns以允许PVT变化。In another preferred embodiment, assuming that N=4 in equation (5), if Tsetup is selected to be 0.2ns, then Tscale≥0.5*Tsetup=0.1ns. Therefore Tscale should be larger than 0.1ns to allow PVT variation.
本发明虽以较佳实施例公开如上,然其并非用以限定本发明,任何本领域技术人员,在不脱离本发明的精神和范围的情况下,当可进行更动与修改,因此本发明的保护范围以后附的权利要求限定的范围为准。Although the present invention is disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall prevail as defined by the appended claims.
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| CN100574100C (en) * | 2007-07-10 | 2009-12-23 | 南亚科技股份有限公司 | delay circuit |
| CN102035542B (en) * | 2010-10-19 | 2012-08-01 | 钰创科技股份有限公司 | Delay locked loop circuit and method with dynamic acceleration phase tracking function |
| TWI459360B (en) * | 2011-08-09 | 2014-11-01 | Raydium Semiconductor Corp | Source driver with automatic de-skew capability |
| CN111208867B (en) * | 2019-12-27 | 2021-08-24 | 芯创智(北京)微电子有限公司 | DDR (double data Rate) read data integer clock cycle-based synchronization circuit and synchronization method |
-
2001
- 2001-05-16 CN CNB011176938A patent/CN1148876C/en not_active Expired - Fee Related
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| CN1385967A (en) | 2002-12-18 |
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