CN1148873C - Communication system, single-chip RF communication system and control method for RF communication system - Google Patents
Communication system, single-chip RF communication system and control method for RF communication system Download PDFInfo
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Abstract
Description
发明领域field of invention
本发明是有关于一通信系统,更明确而言,是关于一互补式金属氧化半导体射频(RF)通信系统。本发明亦有关一压控振荡器(VCO)与混合器,而更明确而言,是关于一多相VCO与混合器。The present invention relates to a communication system, and more particularly to a CMOS radio frequency (RF) communication system. The present invention also relates to a voltage controlled oscillator (VCO) and mixer, and more particularly, to a multiphase VCO and mixer.
相关技术的背景Related Technology Background
目前,一RF通信系统具有包括PCS通信与IMT系统的多种通信应用。因此,追求该系统的一互补式金属氧化半导体的芯片集成来减少成本、大小与功率消耗。Currently, an RF communication system has various communication applications including PCS communication and IMT systems. Therefore, a CMOS chip integration of the system is pursued to reduce cost, size and power consumption.
通常,该RF通信系统是由RF前端方块与一基带数字信号处理(DSP)方块所组成。目前,该基带DSP方块能以低成本与低功率的互补式金属氧化半导体技术实现。然而,该RF前端方块不能够由互补式金属氧化半导体技术实现,因为受限于速度与噪声特性,这些特征是低于目前所使用的RF通信系统速度与噪声规格。Generally, the RF communication system is composed of RF front-end blocks and a baseband digital signal processing (DSP) block. Currently, the baseband DSP block can be implemented in low-cost and low-power CMOS technology. However, the RF front-end block cannot be realized by CMOS technology due to limitations in speed and noise characteristics, which are lower than the speed and noise specifications of currently used RF communication systems.
例如,该PCS手机系统是以超过2.0GHz的频率操作,但是目前的互补式金属氧化半导体技术可靠度从速度与噪声的观点只可在多达大约1.0GHz操作。因此,该RF前端方块可使用二极管或双互补式金属氧化半导体技术实现,其具有比互补式金属氧化半导体技术有更好的速度与噪声特征,但是更昂贵及消耗较多的功率。For example, the PCS cell phone system operates at frequencies in excess of 2.0 GHz, but current CMOS technology reliability can only operate up to about 1.0 GHz from a speed and noise standpoint. Therefore, the RF front-end block can be implemented using diode or dual CMOS technology, which has better speed and noise characteristics than CMOS technology, but is more expensive and consumes more power.
目前,称为“直接转换”与“倍转换(double conversion)”的两不同类型RF结构用于互补式金属氧化半导体RF通信系统。两结构具有以互补式金属氧化半导体实施的优点与缺点。Currently, two different types of RF structures called "direct conversion" and "double conversion" are used in CMOS RF communication systems. Both structures have advantages and disadvantages of implementing CMOS.
图1是显示一相关技术直接转换互补式金属氧化半导体RF通信系统100,其包括一天线105、一RF滤波器110、一低噪声放大器(LNA)120、一第一混合器140、一第二混合器145、一锁相环路(PLL)130、一第一低通滤波器(LPF)150、一第二LPF155、一第一模拟/数字(A/D)转换器160、一第二模拟/数字转换器165、一第三混合器160及一功率放大器170。1 shows a related art direct conversion complementary metal oxide semiconductor
该天线105接收RF信号,而该选取的RF信号然后会在RF滤波器110滤波。该滤波的RF信号是在LNA 120增益放大,而通过LNA 120的该RF信号是通过在第一及第二混合器140、145上的90度相位差相乘而直接解调成基带信号。该PLL 130理想地是使用一电压控制振荡器(VCO)产生两类型的时钟信号,I信号与Q信号。除了相位差之外,该I时钟与Q时钟信号是相同的。I信号理想地与Q信号具有90度相位差。即是,Q信号与I信号有90度的相位移。两组信号I、Q理想地是用来增加RF系统的能力,以识别或维持接收的数据,而不管噪声与干扰。传送具有不同相位的两类型信号可减少数据损失或变化的可能性。图1的解调频率fo等于调制频率fo。The
该解调基带信号的频率为最初频率减去频率fo,以通过该第一及第二LPF 150、155,而最后在该第一及第二模拟/数字转换器160、165上变成模拟/数字转换所需的各信号。该数字信号然后会转移到基带离散时间信号处理(PSP)方块(在图中未显示出)。通道选择是通过改变在锁相环路(PLL)130上的频率fo执行。The frequency of the demodulated baseband signal is the original frequency minus the frequency f o to pass through the first and
在互补式金属氧化半导体技术可信度上大约1GHz限制的一个可能原因是在PLL 130的VCO与混合器的结构。图2是显示一背景电压控制振荡器一混合器的电路图,其中该VCO 10是包括4个差分延迟单元12、14、16与18,并具有类似环振荡器的结构。该4个延迟单元12、14、16、18是串联,并产生时钟信号LO+与反向时钟信号LO一,每个时钟信号具有一频率fo。产生一频率控制信号的VCO 10控制电路包括一相位频率检测器4、将频率控制信号输出到该每一延迟单元12、14、16、18的一充电泵(pump)6与一环路滤波器8。该相位频率检测器4接收分别来自一参考时钟分割器电路2的一参考时钟信号fref与来自一VCO时钟分割器电路3的一VCO时钟信号fVCO。该时钟信号LO+与LO-的频率fo是以M/K(fref)=fo表示。因此,该频fo是基于该参考时钟信号fref与分割器电路2、3。One possible reason for the approximately 1 GHz limit in CMOS technology reliability is the structure of the VCO and mixer in the
例如,一Gilbert-乘法器的混合器20将该输入信号,例如RF信号RF+与RF-乘以时钟信号LO+与LO-。该混合器20包括耦合至源电压VDD的两负载电阻R1、R2、8个N型金属氧化半导体晶体管(NMOS)21-28、及一电流源IS1。该NMOS晶体管21、22的门极耦合到接收该时钟信号LO+,而NMOS晶体管的门极23、24耦合接收反向时钟信号LO-。该NMOS晶体管25、26的门极接收一共偏压VBias。该NMOS晶体管27、28的门极分别接收RF信号RF+、RF-。因此,只有当该晶体管25、27或晶体管26、28同时转换到“ON”状态之时,该时钟信号LO+、LO-便会乘以该RF信号RF+、RF-。混合器20的该输出信号OUT+、OUT-频率低于原始频率的量为该时钟信号LO+、LO-的频率fo。For example,
虽然广泛的频率范围与一低相位噪声需要于各种不同的应用,但是该电压控制振荡器-混合器结构10、20只能支援多达具有可靠度相位噪声与频率范围的大约1GHz频率。该电压控制振荡器-混合器结构10、20的性能会因相位噪声与频率范围恶化,而且当来自VCO的该时钟信号LO+、LO-频率增加之时,无法接受。因此,当该时钟信号LO+、LO-的频率fo超过大约1GHz之时,该VCO10与混合器20不能够实现。Although a wide frequency range and a low phase noise are required for various applications, the VCO-
如上所述,相关技术的直接转换RF系统100具有互补式金属氧化半导体RF集成的优点,因为它较简单。在相关技术的直接转换RF系统中,只需要单一PLL,而高品质滤波器是不需要的。然而,该相关技术的直接转换结构具有使单芯片集成困难或不可能的缺点。As mentioned above, the related art direct
如图3A所示,来自诸如VCO的一本地振荡器(LO)的时钟信号cos ωLOt可泄漏至混合器输入端或天线,其中放射线会发生,因为该本地振荡器(LO)是与RF载波相同的频率。不需要的传输时钟信号Δ(t)cos ω LOt会在物体附近反射,并由混合器“重新接收”。该低通滤波器因为泄漏时钟信号会输出一信号M(t)+Δ(t)。如图3B所示,本地振荡器的自我混合会在该混合器的输出上造成诸如时间变化或“徘徊”直流偏置的问题。As shown in Figure 3A, the clock signal cos ω LO t from a local oscillator (LO) such as a VCO can leak to the mixer input or antenna, where radiation can occur because the local oscillator (LO) is connected to the RF the same frequency as the carrier. The unwanted transmit clock signal Δ(t)cos ω LO t is reflected near the object and "re-received" by the mixer. The low-pass filter will output a signal M(t)+Δ(t) due to the leaked clock signal. As shown in Figure 3B, self-mixing of local oscillators can cause problems such as time-varying or "wandering" DC biases on the output of the mixer.
图3B是描述时间变化与直流偏置。“A”表示在混合器之前的信号,而“B”表示混合器之后的信号。时间变化直流偏置连同固有的电路偏置很明显地可减少接收器部分的动态范围。此外,直接转换RF系统需要通道选择的一高频率、低相位噪声PLL,其不容易使用一集成的互补式金属氧化半导体电压控制振荡器(VCO)达成,对于至少部分的理由已在上面讨论。Figure 3B is a graph depicting the time variation versus DC bias. "A" indicates the signal before the mixer, and "B" indicates the signal after the mixer. The time-varying DC bias, along with the inherent circuit bias, can significantly reduce the dynamic range of the receiver section. Furthermore, direct conversion RF systems require a high frequency, low phase noise PLL for channel selection, which is not easily achieved using an integrated CMOS voltage controlled oscillator (VCO), for at least part of the reasons discussed above.
图4是根据考虑所有潜在通道与频率晶体管的倍转换结构而显示一相关技术的RF通信系统300的方块图。该RF通信系统300包括一天线305、一RF滤波器310、一LNA320、一第一混合器340、一第二混合器345、及一第一LPF350、一第二LPF355、第二级混合器370-373、一第一加法器374、及一第二加法器375。该RF通信系统300进一步包括一第三LPF380、一第四LPF385、一第一模拟/数字转换器390、一第二模拟/数字转换器395、第一及第二PLL330、335、一第三混合器360及一功率放大器370。FIG. 4 is a block diagram showing a related art
该混合器340、345、370-373皆用于解调,而第三混合器360用于调制。该第一及第二混合器340、345用于一选择的RF频率,而第二级混合器370-373是选取用于一中频(IF)。该第一PLL 330可在一高频或RF频率产生时钟信号,该第二PLL 335可产生具有低频或中频(IF)的时钟信号。The
传输数据与具有来自PLL 330的RF频率的时钟信号相乘,以便具有从来自一最初传输数据频率减去RF频率的频率。该第三混合器360的输出信号在功率放大器370做增益放大,然后经由天线305发射。The transmit data is multiplied with the clock signal having the RF frequency from the
对于接收数据而言,该天线305接收RF信号,而滤波器RF 310滤波该RF信号。该滤波的RF信号由LNA 320放大,并由90度相位差混合器340、345与一通常为VCD的单一频率本地振荡器转换成中频信号。该PLL 330可产生RF信号的I信号与Q信号的时钟信号。该第一混合器340可将该RF信号与具有RF频率的I信号的时钟信号相乘,而该第二混合器345可将RF信号与具有RF频率的Q信号相乘。该LPF 350、355是在中频级(亦即,第一级)使用,以便在转换成中频信号之时,移除任何未转换的频率成分,其允许所有的通道能经过该第三级混合器370-373。在中频级的所有通道然后可通过可调PLL 335而将频率直接转换成基带频率信号以便做通道选择。For receiving data, the
解调基带信号C经过滤波器(LPF)380、385,并由模拟/数字转换器390、395转换成数字数据。该数字数据然后会转换到一基带离散时间信号处(DSP)方块(在图中未显示出)。The demodulated baseband signal C is passed through filters (LPF) 380, 385 and converted into digital data by analog/
如上所述,相关技术的倍转换RF系统300具有各种不同的优点。该相关技术了倍转换RF系统300可使用较低的频率来执行通道调制,亦即,中频、第二PLL 335,而不是高频,亦即,RF、第一PLL 330。结果,该高频RF PLL 330可以是能够更有效最佳化的固定频率PLL。此外,既然通道调制是使用中频PLL 335而在较低频操作执行,所以通道选择的相位噪声产生便可减少。As described above, the related art double
然而,相关技术的倍转换RF系统300具有各种不同的缺点。该相关技术的倍转换RF系统具有不容易集成在单芯片的两PLL300。此外,第一PLL的频率是保持在要以互补式金属氧化半导体技术实现,更明确而言,是使用一互补式金属氧化半导体VCD。该VCD与混合器的结构在互补式金属氧化半导体技术的可信度上具有大约1GHz限制。此外,一自我混合问题仍然会发生,因为该第二PLL是在需要的中频载波的相同频率上。图5A是描述在RF通信系统300中的时钟信号泄漏,而图B是描述时间变化与“徘徊”的直流偏置,由于在图4的RF通信系统300中的泄漏时钟信号Δ(t)cos ωLO2(t)(例如,自我混合)。However, the related art double
在图5A,该第一混合器是将该RF信号与具有频率WLO1的RF的时钟信号cos ω Lo1相乘,并输出M(t)cos ω LO2t的RF信号,其具有减去频率WLO1的频率。该第二混合器将来自第一混合器的RF信号与具有频率ωLO2的中频之时钟信号cos ω LO2相乘。然而,在LPF之前,既然该第二混合器的输出信号频率是与需要的RF载波频率相同。因此,该第二混合器的输出信号可泄漏至一基底或重新泄漏至第二混合器。该时间变化直流偏置连同固有的电路偏置会明显地减少接收器部分的动态范围。In FIG. 5A, the first mixer multiplies the RF signal with the clock signal cos ω Lo1 of RF having frequency W LO1 and outputs an RF signal of M(t) cos ω LO2 t having frequency W minus The frequency of LO1 . The second mixer multiplies the RF signal from the first mixer with a clock signal cos ω LO2 having an intermediate frequency of frequency ω LO2 . However, before the LPF, since the output signal frequency of the second mixer is the same as the required RF carrier frequency. Thus, the output signal of the second mixer can leak to a substrate or leak back to the second mixer. This time-varying DC bias, along with the inherent circuit bias, can significantly reduce the dynamic range of the receiver section.
上述参考文件在此列出供参考,其对于额外或选择性细节、特征及技术背景有详实的描述。The aforementioned references are hereby incorporated by reference for full descriptions of additional or optional details, features, and technical background.
发明概述Summary of the invention
本发明的一目的是要至少实质避免相关技术的问题与缺点。An object of the present invention is to at least substantially avoid the problems and disadvantages of the related art.
本发明的一进一步目的是要制造一互补式金属氧化半导体RF前端及使用该前端的方法,其允许一RF通信系统的一芯片集成。A further object of the present invention is to manufacture a CMOS RF front-end and method of using the front-end, which allow a chip integration of an RF communication system.
本发明的另外目的是要提供减少成本与功率需求的一RF通信系统及方法。It is a further object of the present invention to provide an RF communication system and method that reduces cost and power requirements.
仍然为本发明的另一目的是要提供一可靠高速、低噪声互补式金属氧化半导体RF通信系统及该系统的使用方法。Still another object of the present invention is to provide a reliable high speed, low noise CMOS RF communication system and methods of using the same.
本发明进一步目的是要增加一RF通信系统的RF前端的频率范围。It is a further object of the present invention to increase the frequency range of an RF front end of an RF communication system.
本发明进一步目的是要在单一基底上制造一电压控制振荡器一混合器。A further object of the present invention is to fabricate a VCO-mixer on a single substrate.
本发明的另一目的是要增加一电压控制振荡器-混合器结构的频率范围。Another object of the present invention is to increase the frequency range of a VCO-mixer structure.
仍然为本发明的另一目的是要减少一电压控制振荡器结构的噪声。Still another object of the present invention is to reduce the noise of a VCO structure.
本发明的另一目的是要增加该电压控制振荡器-混合器结构的性能。Another object of the invention is to increase the performance of the VCO-mixer architecture.
若要根据本发明的目的而达成其中至少整个或部分的上述目的与优点,如同具体表达与广泛地描述,本发明的一种通信系统包括:一接收器单元,其接收包括具有一载频的选择信号的信号;一单锁相环路,其产生多于两个的具有不同于该载频的一频率的多相时钟信号,其中,所述多相时钟信号被组合以产生具有高于该频率之第二频率的多个本地振荡器信号;及一解调混合器,其混合所述被接收的选择信号和所述多于两个的多相时钟信号,以输出具有减去该载频的频率的选择信号,其中,每一个所述本地振荡器信号解调I载频信号和Q载频信号中的一个信号。To achieve at least all or part of the above objects and advantages according to the purpose of the present invention, as specifically expressed and broadly described, a communication system of the present invention includes: a receiver unit, which receives a A signal for selecting a signal; a single phase-locked loop that generates more than two multiphase clock signals having a frequency different from the carrier frequency, wherein the multiphase clock signals are combined to generate a signal having a frequency higher than the carrier frequency a plurality of local oscillator signals at a second frequency of frequency; and a demodulation mixer that mixes said received selection signal and said more than two multiphase clock signals to output a signal having a frequency minus the carrier frequency frequency selection signals, wherein each of said local oscillator signals demodulates one of an I carrier frequency signal and a Q carrier frequency signal.
若要进一步根据本发明的目的而达成整个或部分的目的,一种单芯片RF通信系统包括:一发送接收机,用于接收及发送RF信号;一单锁相环路,用于产生具有小于载频f0的基本相同之频率2*f0/N的多个2N相位时钟信号,其中N是正整数,当作相位数;一解调混合单元,用于将来自该发送接收机的RF信号与来自该锁相环路的多个2N相位时钟信号混合,以输出具有减去该载频的频率的RF信号,其中该解调混合器包含多个两输入混合器;其中,该多个2N相位时钟信号被组合以解调I载频信号和Q载频信号中的至少一个信号;及一个模拟/数字转换单元,用于将来自该解调混合单元的RF信号转换成数字信号。To further achieve the whole or part of the purpose according to the purpose of the present invention, a single-chip RF communication system includes: a transceiver for receiving and transmitting RF signals; a single phase-locked loop for generating A plurality of 2N phase clock signals of substantially the
仍然是进一步根据本发明的目的而达成整个或部分的目的,一种RF通信系统的控制方法,包括:接收信号,该信号包括具有一载频的选择信号;产生多于两个的多相时钟信号,每个多相时钟信号具有不同于该载频的一基本相同的频率,所述多相时钟信号被组合以产生具有高于该频率的第二频率的多个本地振荡器信号;及将被接收的载频选择信号与所述多于两个的多相时钟信号混合,以输出具有减去该载频的频率的被解调的选择信号,以便于从所述多于两个的多相时钟信号组合的相应的本机振荡器信号解调第一载频信号和第二载频信号中的一个信号。Still further according to the purpose of the present invention to achieve the whole or part of the purpose, a control method of an RF communication system, comprising: receiving a signal including a selection signal having a carrier frequency; generating more than two multi-phase clocks signals, each multiphase clock signal having a substantially identical frequency different from the carrier frequency, said multiphase clock signals being combined to generate a plurality of local oscillator signals having a second frequency higher than the frequency; and The received carrier frequency selection signal is mixed with said more than two multi-phase clock signals to output a demodulated selection signal having a frequency subtracted from the carrier frequency so as to obtain from said more than two multiphase clock signals The corresponding local oscillator signal combined with the clock signal demodulates one of the first carrier frequency signal and the second carrier frequency signal.
本发明的额外优点、目的、及特征部分经由下面描述与部分具有在技术中的技术的描述而变得更显然,或从本发明的实施而可了解。本发明的目的与优点,及从附录权利要求书所特别指出的可清楚地了解。Additional advantages, objects, and features of the present invention will be apparent in part from the following description and in part in the description of the state of the art, or can be learned by practice of the present invention. The objects and advantages of the invention will be apparent from and particularly pointed out in the appended claims.
附图的简单说明A brief description of the drawings
本发明将参考下列附图详细描述,其类似的参考数字是表示相同的元件,其中:The present invention will be described in detail with reference to the following drawings, in which like reference numerals indicate like elements, in which:
图1是显示一相关技术RF通信系统的电路图;FIG. 1 is a circuit diagram showing a related art RF communication system;
图2是一相关技术电压控制振荡器一混合器结构的电路图;Fig. 2 is a circuit diagram of a related art voltage-controlled oscillator-mixer structure;
图3A是显示在图1的电路时钟信号泄漏;Figure 3A is a clock signal leakage shown in the circuit of Figure 1;
图3B是显示图3A的电路的“自我混合”图式;Figure 3B is a "self-mixing" diagram showing the circuit of Figure 3A;
图4是显示另一相关技术RF通信系统的电路图;4 is a circuit diagram showing another related art RF communication system;
图5A是显示在图4的电路中时钟信号泄漏;Figure 5A is a diagram showing clock signal leakage in the circuit of Figure 4;
图5B是显示在图5A的电路中的“自我混合”图式;Figure 5B is a "self-mixing" scheme shown in the circuit of Figure 5A;
图6是根据本发明而显示一多相低频(MPLF)RF通信系统的第一实施例图式;6 is a diagram showing a first embodiment of a polyphase low frequency (MPLF) RF communication system in accordance with the present invention;
图7是显示PLL电路范例方块图;FIG. 7 is a block diagram showing an example of a PLL circuit;
图8是根据本发明的另一实施例而显示一RF通信系统的接收部分方块图;8 is a block diagram showing a receiving part of an RF communication system according to another embodiment of the present invention;
图9是显示具有6个相位的图8的RF通信系统方块图;9 is a block diagram showing the RF communication system of FIG. 8 with 6 phases;
图10是仍然根据本发明的实施例而显示一RF通信系统的接收部分方块图;10 is a block diagram showing a receiving portion of an RF communication system still according to an embodiment of the present invention;
图11是显示具有6个相位的图10的RF通信系统方块图;11 is a block diagram showing the RF communication system of FIG. 10 with 6 phases;
图12是仍然根据本发明的实施例而显示一RF通信系统的接收部分方块固;FIG. 12 is a block diagram showing a receiving part of an RF communication system still according to an embodiment of the present invention;
图13A是显示一电压控制振荡-混合器结构范例的方块图;13A is a block diagram showing an example of a VCO-mixer structure;
图13B是显示图13A的电压控制振荡器-混合器结构电路图;FIG. 13B is a circuit diagram showing the VCO-mixer structure of FIG. 13A;
图14是显示另一电压控制振荡器-混合器范例的电路图;及14 is a circuit diagram showing another example of a VCO-mixer; and
图15A-15H是显示图14的操作时序波形图式。15A-15H are waveform diagrams showing the operation timing of FIG. 14 .
较佳实施例的详细说明Detailed Description of the Preferred Embodiment
使用互补式金属氧化半导体技术所形成的一单芯片RF通信系统具有各种不同的需求。一互补式金属氧化半导体电压控制振荡器(VCO)具有较差噪声特性。因此,一互补式金属氧化半导体锁相环路(PLL)集成是需要的,然而,PLL的数目应该很小,而一PLL的中频理想地应充分地不同于一传输的RF频率(例如,理想地是足够低),以便使用该互补式金属氧化半导体VCO来控制一相位噪声结果。高品质滤波器理想地可除去,因为相关的缺点区域与功率规格。而且,在互补式金属氧化半导体RF系统中的许多元件应很小或减少,而不会降低效率。A single-chip RF communication system using CMOS technology has various requirements. A complementary metal oxide semiconductor voltage controlled oscillator (VCO) has poor noise characteristics. Therefore, a complementary metal-oxide-semiconductor phase-locked loop (PLL) integration is required, however, the number of PLLs should be small, and the intermediate frequency of a PLL should ideally be sufficiently different from a transmitted RF frequency (e.g., ideally ground is low enough) to use the CMOS VCO to control a phase noise result. High quality filters can ideally be eliminated because of the associated disadvantage areas and power specifications. Also, many components in a CMOS RF system should be small or reduced without reducing efficiency.
本发明的第一较佳实施例是在图6所示的“多相低频”(MPLF)转换RF通信系统500,而且理想上能在单一互补式金属氧化半导体芯片上形成。该第一较佳实施例能以超过大约1GHz的频率操作。“多相位低频转换”用语会被使用,因为具有高频的一单相周期信号理想地可通过乘以多相位低频周期信号获得。该MPLF转换RF通信系统500的第一较佳实施例是包括一前端MPLF RF方块502与一数字信号处理(DSP)方块504,其理想地是基带。如上所述,相关技术DSP方块能以互补式金属氧化半导体技术形成。因此,包括一数字信号处理器550的DSP方块的详细描述便会省略。The first preferred embodiment of the present invention is a "multiphase low frequency" (MPLF) switching RF communication system 500 shown in FIG. 6, and ideally can be formed on a single CMOS chip. The first preferred embodiment is capable of operating at frequencies in excess of about 1 GHz. The term "multiphase low frequency conversion" will be used because a single phase periodic signal with high frequency can ideally be obtained by multiplying a multiphase low frequency periodic signal. The first preferred embodiment of the MPLF converted RF communication system 500 includes a front-end MPLF RF block 502 and a digital signal processing (DSP) block 504, which is ideally baseband. As mentioned above, related art DSP blocks can be formed in CMOS technology. Therefore, a detailed description of the DSP block including a digital signal processor 550 will be omitted.
该MPLF转换RF方块502包括一天线505、一RF滤波器510(例如,带通滤波器)、一低噪声放大器(LNA)520及第一与第二混合器530、560。该MPLF转换RF方块502进一步包括一锁相环路(PLL)540、一低通滤波器(LPF)580、一模拟/数字(A/D)转换器590、及在第二混合器560与天线505之间耦合的一功率放大器570。该PLL 540可产生一调制与解调时钟,亦即,本地振荡器(LO),其频率是由一参考时钟(REF f0)决定。The MPLF conversion RF block 502 includes an antenna 505 , an RF filter 510 (eg, bandpass filter), a low noise amplifier (LNA) 520 and first and second mixers 530 , 560 . The MPLF conversion RF block 502 further includes a phase-locked loop (PLL) 540, a low-pass filter (LPF) 580, an analog/digital (A/D) converter 590, and an A power amplifier 570 coupled between 505. The PLL 540 can generate a modulation and demodulation clock, ie, a local oscillator (LO), whose frequency is determined by a reference clock (REF f 0 ).
图7是显示PLL 540的实施例方块图。该PLL 540分别包括参考与主分割器610、620、一相位比较器630、一环路滤波器640、及一电压控制振荡器(VCO)650。该VCO 650输出LO频率f0,该频率由相位比较器630与参考时钟信号相比较。该相位比较器630的输出信号会经过环路滤波器640,当作VCO 650的控制信号(例如,频率)。根据该通信系统,该LO的频率理想上地是可变的。例如,个人通信系统(PCS)的LO频率能够是大约1.8GHz,而IMT 2000系统的LO频率是大约2.0GHz。FIG. 7 is a block diagram showing an embodiment of the PLL 540 . The PLL 540 includes reference and main dividers 610, 620, a phase comparator 630, a loop filter 640, and a voltage controlled oscillator (VCO) 650, respectively. The VCO 650 outputs an LO frequency f 0 , which is compared by a phase comparator 630 to a reference clock signal. The output signal of the phase comparator 630 will pass through the loop filter 640 and be used as a control signal (eg, frequency) of the VCO 650 . Depending on the communication system, the frequency of the LO is ideally variable. For example, the LO frequency of a personal communication system (PCS) can be about 1.8 GHz, while the LO frequency of an IMT 2000 system is about 2.0 GHz.
在图6所示的MPLF转换RF通信系统500的第一较佳实施例中,传输数据是由MPLF RF方块502从DSP方块504接收。该传输数据是在LO频率由一理想地调制第二混合器560所调制。该调制数据是由功率放大器570放大,并由天线505输出。In the first preferred embodiment of the MPLF converted RF communication system 500 shown in FIG. 6, the transmission data is received by the MPLF RF block 502 from the DSP block 504. The transmit data is modulated by an ideally modulated second mixer 560 at the LO frequency. The modulated data is amplified by the power amplifier 570 and output by the antenna 505 .
该低噪声放大器(LNA)520可接收来自天线505的输入信号,并放大信号电平以输出RF信号。该RF BPF 520理想地是在天线505与LNA 520之间耦合。该RF信号理想地在与调制频率相同的频率上通过解调第一混合器530来解调。该解调混合器530的输出通过通过LPF 580而变成接收数据。该接收的数据理想地是由模拟/数字转换器590转换成一数字信号,并输出至DSP 550。The low noise amplifier (LNA) 520 can receive an input signal from the antenna 505 and amplify the signal level to output an RF signal. The RF BPF 520 is ideally coupled between the antenna 505 and the LNA 520. The RF signal is ideally demodulated by a demodulation first mixer 530 at the same frequency as the modulation frequency. The output of the demodulation mixer 530 becomes received data by passing through the LPF 580. The received data is ideally converted to a digital signal by analog/digital converter 590 and output to DSP 550.
为了要使用足够低于传输RF频率的中频的单一PLL,该MPLF转换RF通信系统500的第一较佳实施例是使用通过乘以一多相低频周期信号所获得的一单相高频周期信号(亦即,RF频率)。特别地,虽然本发明非意在要限制,但是一高频“正弦”与“余弦”信号需使用在RF系统。具有ω RF频率的正弦与余弦信号能通过乘以具有如下列方程式1和2所示的2 ωRF/N频率的N相位正弦信号获得:In order to use a single PLL with an intermediate frequency sufficiently lower than the transmit RF frequency, the first preferred embodiment of the MPLF-converted RF communication system 500 uses a single-phase high-frequency periodic signal obtained by multiplying a multi-phase low-frequency periodic signal (ie, RF frequency). In particular, although the invention is not intended to be limiting, a high frequency "sine" and "cosine" signal needs to be used in RF systems. The sine and cosine signals with ω RF frequency can be obtained by multiplying the N-phase sine signal with 2 ω RF /N frequency as shown in
一乘法因子不是“N”而是“N/2”,因为其余的N/2个正弦信号可以是第一N/2正弦信号的一反向。该反向信号理想地是用来制造一差分输入混合器的差分信号。A multiplication factor is not "N" but "N/2" because the remaining N/2 sinusoids can be an inverse of the first N/2 sinusoids. The inverted signal is ideally used to create a differential signal for a differential input mixer.
图8是根据本发明而显示一RF方块的第二较佳实施例的接收部分700,其能够使用在MPLF转换RF通信系统的第一较佳实施例。该接收部分700包括一天线715、一RF滤波器720、一LNA 725与一解调混合器730。该RF方块的接收部分700进一步包括一PLL740、一低通滤波器780与一模拟/数字转换器790。该PLL 740可产生一解调时钟,亦即,等于2*f0/N的本地振荡器(LO),其频率是由一参考时钟(在图中未显示出)决定。天线715、RF滤波器720、LNA 725、LPF 780与模拟/数字转换器790在操作上类似于第一较佳实施例,因此便省略详细的描述。FIG. 8 shows a receiving
RF方块的接收部分700使用一PLL 740。该PLL 740使用2*f0/N频率,并产生总共2N相位时钟信号。该PLL 740可产生N相位±LOcos(k,t)与N相位±LOsin(k,t)信号,其理想地是由如在下列方程式3-4决定。The receiving
如图8所示,该RF方块的接收部分700具有分成上面与下面混合器阵列732、734的解调混合器730。该每一上面与下面混合器阵列732、734包括多个传统的2一输入混合器735。该上面混合器阵列732是将N相位(N/2:非反向,N/2反向)(频率为(2ω RF)/N)的正弦信号与一RF信号相乘,其是等于将单相ωRF频率的余弦信号与RF信号相乘。非反向与反向的正弦信号需用以输入单一混合器,因为该传统的2输入混合器需要差分输入。该下面混合器阵列734是将N相位(N/2非反向,N/2反向)(频率为ωRF/N)的正弦信号与RF信号,其是等于单相的ωRF正弦信号与RF信号相乘。因此,该RF方块的接收部分700在功能上是类似在图1所示的直接转换结构。然而,根据本发明的接收部分700是使用N相位,2ωRF/N的频率的正弦信号解调而不是单相的ωRF正弦信号。As shown in FIG. 8, the receive
如上所述,该PLL 740可产生2N相位时钟信号。N相位时钟信号是N相位正弦信号与N相位余弦信号。两个N相位信号包括N/2非反向信号与N/2反向信号。该N相位正弦信号会连同RF信号输入上面混合器阵列732,而该N相位正弦信号会连同RF信号输入下面混合器阵列734。该上面与下面混合器阵列732和734分别具有多个混合器735与M个级数。该M个级数包括第一级,(例如,735)、第二级(例如,735’)、…、第M-1级、及第M级(例如,735”)。每一混合器阵列的每一级包括至少具有两输入的一混合器。在第一级上的混合器数目K1是最高的级数目。最后一级第M级在整个级中具有混合器的最少数目(KM)。在级之中的混合器相对级数能以非等式表示K1>K2>K3>K4……KM-1>KM。As mentioned above, the
每一混合器735具有两个输入。每一输入具有反向信号的一反向信号与一非反向信号,因为该混合器735的每一输入是输入两不同的信号。如上所述,来自LNA 725的RF信号与来自PLL 746的N信号是在第一级上当作混合器735的输入信号。在第一级上的混合器73的输出信号是在第二级上当作混合器735’的输入信号使用。以相同的方式,在第M-1级上的混合器输出信号是当作混合器735”的两输入信号使用,其是在上面混合器阵列732与下面混合器阵列734的第M级上的单一混合器。Each
图9是显示MPLF转换RF通信系统的接收部分700的6相位范例,其是使用传统的2输入混合器。一PLL 840产生能够传送给混合器830的12相位正弦信号。在毗连两信号之间的相位差是π/6(亦即,2π/12)。相位(0、2、4、6、8、10)是当作上面混合器832的输入使用,并与理想地的RF输入相乘,其是等于cos(ωRFt)与RF输入的乘积。相位(1、3、5、7、9、11)会输入下面混合器834,而且理想地会与RF输入相乘,而等于sin(ω RFt)与RF输入的乘积。因此,当时钟信号与RF信号相乘之时,该时钟信号的频率是f0。FIG. 9 is a 6-phase example showing a receive
该PLL 840包括诸如一电压控制源(VCO)的时钟产生器,而如此便可在调制之时产生与RF相乘的12相位时钟信号。该产生的时钟信号具有低于频率f0的频率2*f0/P(P=相位数目),以与RF信号相乘。来自PLL 840的时钟信号具有较低频率2*f0/P,因为PLL 840会产生多相时钟信号相位0、……、相位12。滤波的RF信号是在LNA725做增益放大,并与多相时钟信号相乘,因而在混合器阵列830生成用以调制的12个正弦信号。与时钟信号相乘的RF信号频率低于最初频率的量为时钟信号的最后频率f0。The PLL 840 includes a clock generator such as a voltage controlled source (VCO), and thus generates a 12-phase clock signal multiplied by RF when modulated. The generated clock signal has a
来自PLL 840的时钟信号的最初频率2*f0/P会改变成f0,用以在混合器(例如,混合器阵列)830与RF信号相乘。因此,该上面混合器阵列832与该下面混合器阵列834可组合成具有2*f0/P的时钟信号,并将具有频率f0的时钟信号与RF信号相乘。结果,具有减小了频率f0的频率的RF信号可通过LPF 780与模拟/数字转换器790,并传送至DSP部分(在图中未显示出)。PLL 840所产生的12相位正弦信号如下所示:The
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相位10:
相位11:
图10是根据本发明的第三较佳实施例而显示一RF方块的MPLF转换接收部分900,其可使用在MPLF转换RF通信系统的第一较佳实施例。该接收部分900包括一天线915、一RF滤彼器920、一LNA925与混合器930。RF方块的接收部分900进一步包括一PLL 940、一LPF 90及一模拟/数字转换器990。该PLL 940理想地可产生一解调时钟,亦即,理想地等于2*fRF/N的本地振荡器(LO),其频率是由一参考时钟(在图中未显示出)决定。天线915、RF滤波器920、LNA 925、LPF 980及模拟/数字转换器990在操作上类似于第一较佳实施例,因此将详细描述省略。FIG. 10 shows an MPLF conversion receiving part 900 of an RF block according to the third preferred embodiment of the present invention, which can be used in the first preferred embodiment of the MPLF conversion RF communication system. The receiving part 900 includes an
RF方块的接收部分900只使用一个PLL。该PLL 940包括理想地使用2*f0/N频率的一时钟产生器942。该时钟产生器942理想地可产生N相位±LOcos(k,t)与N相位±LOsin(k,t)信号,其总地有2N相位信号。该时钟产生器942理想地是一多相VCO,而混合部分930亦是多相混合器。The receiving part 900 of the RF block uses only one PLL. The PLL 940 includes a
如图10所示,RF方块的接收部分900使用多相混合器932与934。该上面多相混合器932取代该上面混合器阵列732的功能,而该下面多相混合器934取代该下面混合器阵列734的功能。As shown in FIG. 10 , the receive portion 900 of the RF block uses
该PLL 940产生用以调制与解调的时钟信号。该PLL 940的时钟产生器942可产生时钟信号,其具有用以解调与调制的频率2*f0/N(N=相位数目)。该时钟产生器942可产生具有频率2*f0/N的时钟信号,因为根据互补式金属氧化半导体装置实施的频率限度。对于一RF通信系统的互补式金属氧化半导体实施而言,该时钟产生器942的频率应是不同于并低于混合部分930的频率。The PLL 940 generates clock signals for modulation and demodulation. The
图11是显示使用多相输入混合器的一MPLF转换RF通信系统的接收部分1000的6相位范例。一PLL 1040可产生12相位正弦信号,这些信号传送给一多相混合器1030。相位(0、2、4、6、8、10)是当作一上面混合器1032的输入使用,并与理想地的RF输入相乘,其等于cos(ωRFt)与RF输入的乘积。相位(1、3、5、7、9、11)是输入下面的混合器1034,而理想地是与RF输入相乘,其是等于sin(ωRFt)与RF输入的乘积。FIG. 11 is a 6-phase example showing the receive section 1000 of an MPLF-converted RF communication system using multi-phase input mixers. A PLL 1040 generates 12-phase sinusoidal signals, which are sent to a multiphase mixer 1030 . Phase (0, 2, 4, 6, 8, 10) is used as an input to an upper mixer 1032 and is multiplied with ideally the RF input, which is equal to the product of cos(ω RF t) and RF input. The phases (1, 3, 5, 7, 9, 11) are input to the mixer 1034 below and are ideally multiplied with the RF input, which is equal to the product of sin(ω RF t) times the RF input.
图12是根据本发明的第四较佳实施例而显示一RF方块的MPLF转换传输部分1100,其可使用在MPLF转换RF通信系统的第一较佳实施例。该接收部分1100包括一天线1105、一混合器1160、一PLL 1140、多个LPF 1180、多个数字/模拟(D/A)转换器1190及耦合在混合器1160与天线1105之间的一功率放大器1170。该PLL 1140可使用一时钟产生器1142来产生时钟信号。该时钟产生器1142理想地可使用本地振荡器(LO)来产生一调制与解调时钟信号,其频率是由一参考时钟(fRF)决定。FIG. 12 shows an MPLF
在一RF方块的传送部分1100的第四较佳实施例中,数字数据是从DSP方块(在图中未显示出)接收,并由数字/模拟转换器1190转换成一模拟信号,并由LPF 1180滤波。该混合器1160理想地是从PLL 1140接收多相低频(亦即,2*f0/N)时钟信号及来自LPF 1180的一基带信号,以产生频率是fRP的一调制RF信号。该混合器1160理想地包括多相向上转换混合器1165。图12亦显示多相向上转换混合器1165的实施例方块图。该混合器1165使用两个控制电路方块1162和1164,其可接收时钟信号LO(0、…、N-1)、/LO(0、…、N-1),以产生该调制的RF信号。该调制的RF数据是由功率放大器1170放大,而然后由天线1105输出。In a fourth preferred embodiment of the transmitting
如上所述,解调的混合器可通过将RF信号与时钟信号相乘而减少具有时钟信号频率的高频RF信号。在第四较佳实施例中,该混合器1160理想地可调制传输数据,以便增加低频传输数据的频率,增量为组合时钟信号频率。当调制时,噪声对传输数据的影响不如解调时那样显著。然而,减少时钟信号LO(0、…、N-1)的频率可确实减少或除去诸如寄生电容的噪声。此外,大约1GHz的互补式金属氧化半导体技术的频率界限可以克服。因此,该第四较佳实施例具有与第三较佳实施例相同的优点。As described above, the demodulating mixer can reduce a high frequency RF signal having the frequency of the clock signal by multiplying the RF signal by the clock signal. In the fourth preferred embodiment, the
图13A是根据本发明的一较佳实施例的一电压控制振荡器-混合器结构方块图。该电压控制振荡器-混合器电路已在Kyeongho Lee所申请的美国专利案号09/121,863,名称“VOC-MIXERSTRUCTURE”中描述,在此仅列出供参考。该结构包括一多相电压控制振荡器VCO 1250及一多相混合器1200。该多相混合器1200包括一差分放大电路1200A及一组合电路1200B。FIG. 13A is a block diagram of a VCO-mixer structure according to a preferred embodiment of the present invention. This Voltage Controlled Oscillator-Mixer circuit is described in Kyeongho Lee's US Patent Application Serial No. 09/121,863, entitled "VOC-MIXERSTRUCTURE", which is listed here for reference only. The architecture includes a multiphase voltage controlled
当使用具有fREF=f0参考时钟的一参考频率信号之时,该多相VCO 1250可产生具有2*f0/N频率的多个N相位时钟信号LO(i=0至N-1),其中N=ND*2,而ND等于在多相VCO 1250中的延迟单元数目。换句话说,该VCO 1250可将频率f0减少到2*f0/N。如此便可减少多相VCO的相位噪声及增加频率范围。When using a reference frequency signal with f REF =f 0 reference clock, the
具有2*f0/N频率的多个N相位中间时钟信号LO(0)、LO(1)、……、LO(N-1)输入到多相混合器1200的组合电路1200B,而诸如RF信号RF+、RF-的输入信号输入到该差分放大电路1200A。该差分放大电路1200B可差分放大该无线电频率信号RF+、RF-。该组合电路1200B响应于一偏压Vbias,并组合N相位中间时钟信号LO(0)-LO(N-1),以产生具有最初频率f0的输出时钟信号LOT+、LOT-。该混合器1200然后可达成输出时钟信号LOT+、LOT-与该RF信号RF+、RF-的相乘。图13B是描述电压控制振荡器-混合器结构1250、1200的电路图范例。多相VCO 1250包括串联的延迟单元12501-1250ND数目。基于该配置,该多相VCO可产生多个N相位中间时钟信号LO(0)-LO(N-1),这些信号具有2*f0/N频率。用以产生一频率控制信号的VCO 1250控制电路包括一相位频率检测器1254、一充电泵1256及一环路滤波器1258,其可将该频率控制信号输出至该每一延迟单元12501-1250ND。该相位频率检测器1254可接收分别来自一参考时钟分割器电路与一VCO时钟分割器电路1253的一参考时钟信号fref与一VCO时钟信号。该时钟信号LO(φ)-LO(N-1)的频率是由M’/K’(fref)=2f0/N表示。因此,频率f0是基于参考时钟信号fref与该分割器电路1252、1253。换句话说,fVCO可以是设定分割器电路1252、1253的M’/K’的2f0/N。A plurality of N-phase intermediate clock signals LO(0), LO (1), . Input signals of signals RF+, RF- are input to this
该多相混合器1200的差分放大电路1200A包括两负载电阻R1’、R2’,这些负载电阻分别耦合至两差分放大器1200A1、1200A2。该第一差分放大器1200A1包括两NMOS晶体管1210、1212,而该第二差分放大器1200A2亦包括两NMOS晶体管1214、1216。该NMOS晶体管1210,1216的漏极分别耦合至该负载电阻R1’、R2’,而该NMOS晶体管1210、1216的门极耦合用以接收RF信号RF+。此外,该NMOS晶体管1212、1214的漏极是分别耦合至该负载电阻R2’、R1’,而门极是耦合用以接收RF信号RF-。NMOS晶体管1210、1212与NMOS晶体管1214、1216的源极是彼此耦合,及连接至多相混合器的组合电路1200B。The
该差分放大器1200A1、1200A2分别差分放大该RF信号RF+、RF-,以便获得更精确的输出信号OUT-、OUT+。此外,该差分放大可移除可能加入该RF信号RF+、RF-的噪声。在目前较佳的实施例中,包括两差分放大器1200A1、1200A2。然而,在本发明替代的实施例中可以亦只使用该差分放大器之一实现。The
该组合电路1200B包括偏压NMOS晶体管1232、1234、第一组合单元1200B、及第二组合单元1200B2,后二者分别耦合至偏压NMOS晶体管1232、1234,及一电流源Is1,其耦合至该第一及第二组合单元1200B1、1200B2。该第一组合单元1200B1,包括多个晶体管单元12200、12202、…、1220N-2,而该第二组合单元包括第二多个晶体管单元12201、12203、…、1220N-1。The
理想地,多个晶体管单元的每一个包括多个串联晶体管,其中该串联晶体管与多个晶体管单元的串联晶体管并联耦合。理想地,每一晶体管单元包括两(2)串联晶体管。因此,在较佳实施例中,在每一组合单元1200A或1200B中,整个有N/2的晶体管单元数目,以致于NMOS晶体管的总数是2*N。Ideally, each of the plurality of transistor cells comprises a plurality of series transistors, wherein the series transistors are coupled in parallel with the series transistors of the plurality of transistor cells. Ideally, each transistor cell includes two (2) transistors in series. Therefore, in a preferred embodiment, there are N/2 transistor units in each
该偏压NMOS晶体管1232、1234的门极耦合用以接收偏压VBias,而在该第一及第二多个晶体管单元中的晶体管门极耦合用以接收一相应的具有2*f0/N频率的N相位中间时钟信号LO(i)与/LO(i),其中/LO(i)=LO(N/2+i),i=0、1…、N/2-1。在目前的较佳实施例中,包括该偏压NMOS晶体管1232、1234用以避免错误。然而,这类晶体管可在替代实施例中省略。此外,组合电路1200B的2*N数目NMOS晶体管的顺序导通-关闭操作相应于NAND逻辑电路,其在另一实施例中可以同等的逻辑电路与结构替代。The gates of the
图13B结构允许在单芯片上集成多相VCO 1250与多相混合器1200,亦即,在一单半导体基底上使用互补式金属氧化半导体技术。此结构与设计可减少包括由寄生电容所产生的噪声。如上所述,在差分放大电路1200A使用该RF信号RF+与RF-的差分放大可减少噪声。The structure of FIG. 13B allows the integration of the
具有2*f0/N频率的N相位中间时钟信号LO(i)除以参考频率f0也可以减小噪声。当多个晶体管在同一基底上形成之时,例如互补式金属氧化半导体技术的半导体基底,多个P-N节便可在基底上形成。该寄生电容大多存在于P-N节。如果运用于晶体管门极的频率非常高,与2*f0/N的减少频率相较比,较高频的f0便会造成更多的噪声。Dividing the N-phase intermediate clock signal LO(i) with a frequency of 2*f 0 /N by the reference frequency f 0 can also reduce noise. When multiple transistors are formed on the same substrate, such as CMOS technology semiconductor substrates, multiple PN junctions can be formed on the substrate. Most of this parasitic capacitance exists in the PN junction. If the frequency applied to the gate of the transistor is very high, the higher frequency f 0 will cause more noise than the reduced frequency of 2*f 0 /N.
此外,该差分放大器电路1200A与该组合电路1200B的操作决定于具有f0频率的输出时钟信号LOT+、LOT-,后二者信号分别由该第一及第二组合单元1200B1、1200B2提供,这是通过组合具有2*f0/N频率的N相位中间时钟信号LO(i)来实现。当施加该偏压电压VBias时,该NMOS晶体管1232、1234便会基于该输出信号LOT+、LOT-而转变成导通与关闭状态。虽然该NMOS晶体管1210、1212、1214与1216通过提供给门极的该PF信号RF+、RF-可转变成导通状态,当该偏压NMOS晶体管1232、1234由时钟信号LOT+、LOT-导通之时,用以产生该输出信号OUT+、OUT-的该RF信号RF+、RF-的放大与输出时钟信号LOT+、LOT-的放大便会执行。In addition, the operation of the
图14是描述当ND=3与N=6时的多相VCO与多相混合器的另一较佳实施例,而图15A-15H是描述在图14中所示的较佳实施例电路的操作时序图。该多相VCO 1250包括3个延迟单元12501-12503,以产生6相位中间时钟信号LO(0)-LO(5)。包括延迟单元12501-12503(亦即,该延迟单元12501)的5个晶体管的电路范例亦显示出。为了说明,如果该输入时钟信号具有频率f0=1.5GHz,6相位中间时钟信号LO(0)-LO(5)便具有0.5GHz的频率。Fig. 14 is another preferred embodiment describing the multiphase VCO and multiphase mixer when ND = 3 and N = 6, and Figs. 15A-15H describe the preferred embodiment circuit shown in Fig. 14 operation sequence diagram. The
该6相位混合器1280包括一差分放大电路1280A及一组合电路1280B。该差分放大电路1280A包括一第一差分放大器1280A1,其具有NMOS晶体管1260与1262;一第二差分放大器1280A2,具有NMOS晶体管1264与1266,该两个差分放大器分别耦合至负载电阻R3和R4。该组合电路1280B包括一第一及第二组合单元1280B1、1280B2,二者共同耦合至电流源Is2。该第一及第二组合单元1280B1、1280B2经由偏压NMOS晶体管1282、1284而分别耦合至该第一及第二差分放大器1280A1、1280A2,后二者受到偏压电压VBias的偏压。重复地,该第一及第二组合单元1250B1,1250B2包括6个晶体管单元12700-12705,而整个有10个晶体管。The 6-phase mixer 1280 includes a differential amplifier circuit 1280A and a combination circuit 1280B. The differential amplifier circuit 1280A includes a first differential amplifier 1280A1 having NMOS transistors 1260 and 1262; a second differential amplifier 1280A2 having NMOS transistors 1264 and 1266 coupled to load resistors R3 and R4 respectively . The combining circuit 1280B includes a first and a second combining unit 1280B 1 , 1280B 2 , both of which are commonly coupled to a current source I s2 . The first and second combination units 1280B 1 , 1280B 2 are respectively coupled to the first and second differential amplifiers 1280A 1 , 1280A 2 via bias NMOS transistors 1282 , 1284 , which are biased by a bias voltage V Bias . pressure. Repeatedly, the first and second combination cells 1250B 1 , 1250B 2 include 6 transistor cells 1270 0 -1270 5 , and there are 10 transistors in total.
如图15A-15F所示,该6相位VCO 1250可产生具有降低的频率f0/3的6相位中间时钟信号LO(1)-LO(5)。该6相位混合器1250接收6相位中间时钟信号LO(1)-LO(5)及该RF信号RF+与RF-。每个中间时钟信号LO(1)-LO(5)和/LO(0)-/LO(2)(其中/LO(0)=LO(3)、/LO(1)=LO(4)及/LO(2)=LO(5))被施加到该第一及第二组合单元1280B1、1280B2的一相应的晶体管。该第一及第二组合单元1280B1、1280B2组合具有频率f0/3的6相位中间时钟信号LO(0)、LO(1)、…、LO(4)、LO(5),以产生具有频率f0的该输出时钟信号LOT+与LOT-。As shown in Figures 15A-15F, the 6-
当LO(0)是高电位而LO(1)是低电位(LO(4):高)时,两输出信号LOT+、LOT-分别是低电位和高电位。当LO(1)是高电位而LO(2)是低电位(LO(5):高)时,该输出信号LOT+、LOT-分别为高电位和低电位。当LO(2)是高电位而LO(3)是低电位(LO(0):高)时,该输出信号LOT+、LOT-分别为低电位和高电位。当LO(3)是高电位而LO(4)是低电位(LO(1):高)时,该输出信号LOT+、LOT-分别为高电位与低电位。当LO(4)是高电位而LO(5)是低电位(LO(2):高)时,该混合器503的输出信号LOT+、LOT-分别是低和高电位。当LO(5)高电位而LO(0)是低电位(LO(3):高)时,该输出信号LOT+,LOT-分别是低与高电位。When LO(0) is high and LO(1) is low (LO(4): high), the two output signals LOT+, LOT- are low and high respectively. When LO(1) is high and LO(2) is low (LO(5): high), the output signals LOT+, LOT- are high and low, respectively. When LO(2) is high and LO(3) is low (LO(0): high), the output signals LOT+, LOT- are low and high, respectively. When LO(3) is high and LO(4) is low (LO(1): high), the output signals LOT+, LOT- are high and low, respectively. When LO(4) is high and LO(5) is low (LO(2): high), the output signals LOT+, LOT- of the mixer 503 are low and high, respectively. When LO(5) is high and LO(0) is low (LO(3): high), the output signals LOT+, LOT- are low and high, respectively.
在组合电路中每一对NMOS晶体管是依序接通,由此产生如图15G和15H所示的输出信号LOT+与LOT-。Each pair of NMOS transistors in the combinational circuit is sequentially turned on, thereby generating output signals LOT+ and LOT- as shown in FIGS. 15G and 15H.
如上所述,该较佳实施例具有各种不同的优点。MPLF转换RF通信系统的较佳实施例不需要任何的高品质滤波器,而只使用1个PLL。因此,该MPLF转换结构可容易地在一互补式金属氧化半导体芯片上集成。此外,通道选择PLL的频率是从FRP减少到(2fRP)/N,这导致VCO的一时钟产生电路的相位噪声减少及易于实施通道选择。特别地,该PLL频率(LO)不同于(例如小于)载频。结果,MTLF RF通信系统的较佳实施例包括至少有关技术的直接转换与倍转换通信系统的优点,而除去两结构的缺点。As mentioned above, the preferred embodiment has various advantages. The preferred embodiment of the MPLF converted RF communication system does not require any high quality filters and uses only 1 PLL. Therefore, the MPLF switching structure can be easily integrated on a CMOS chip. In addition, the frequency of the channel selection PLL is reduced from F RP to (2f RP )/N, which results in a reduction in phase noise of a clock generation circuit of the VCO and ease of channel selection. In particular, the PLL frequency (LO) is different from (eg smaller than) the carrier frequency. As a result, the preferred embodiment of the MTLF RF communication system includes at least the advantages of direct conversion and double conversion communication systems of the related art, while eliminating the disadvantages of both architectures.
此外,一坚固而低噪声CO与混合器可在单一基底上制造,理想地可使用互补式金属氧化半导体技术在半导体基底上实施。由输入信号与输入时钟信号所造成的干扰可明显地减少,因为中间时钟信号的频率偏离调制频单。该相锁环路(PLL)频率范围能够增加,因为PLL频率范围可容易地在低频情况上增加。而且,此结果会提高在RF通信系统中RF前端的通道选择能力。Furthermore, a robust and low noise CO and mixer can be fabricated on a single substrate, ideally implemented on a semiconductor substrate using CMOS technology. The interference caused by the input signal and the input clock signal can be significantly reduced because the frequency of the intermediate clock signal is offset from the modulation frequency list. The phase-locked loop (PLL) frequency range can be increased because the PLL frequency range can be easily increased at low frequencies. Moreover, the result will improve the channel selection capability of RF front-ends in RF communication systems.
先前的实施例只用以举例说明,而不是构成对本发明的限制。本发明的宗旨可容易地运用于其他类型的装置。本发明的描述是意在说明,而不是限制申请专利的范围。许多的替代、修改、及变化在该技术中是熟知的。在权利要求书中,装置加功能的叙述意在覆盖在此所述的功能结构,不仅是结构上的等同物,而且亦是等同的The preceding examples are for illustration only, and do not constitute limitations of the present invention. The teachings of the present invention can be readily applied to other types of devices. The description of the present invention is intended to illustrate, not to limit the scope of patent claims. Many substitutions, modifications, and variations are known in the art. In the claims, means-plus-function recitations are intended to cover the functional structures described herein and not only structural equivalents but also equivalents.
结构。structure.
Claims (18)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
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| US09/121,863 | 1998-07-24 | ||
| US09/121,601 | 1998-07-24 | ||
| US09/121,601 US6335952B1 (en) | 1998-07-24 | 1998-07-24 | Single chip CMOS transmitter/receiver |
| US09/121,863 US6194947B1 (en) | 1998-07-24 | 1998-07-24 | VCO-mixer structure |
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| CN1309835A CN1309835A (en) | 2001-08-22 |
| CN1148873C true CN1148873C (en) | 2004-05-05 |
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| CNB998087645A Expired - Lifetime CN1148873C (en) | 1998-07-24 | 1999-07-23 | Communication system, single-chip RF communication system and control method for RF communication system |
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| EP (1) | EP1101285A4 (en) |
| JP (1) | JP4545932B2 (en) |
| KR (1) | KR100619227B1 (en) |
| CN (1) | CN1148873C (en) |
| AU (1) | AU764882B2 (en) |
| CA (1) | CA2338564C (en) |
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- 1999-07-23 JP JP2000561705A patent/JP4545932B2/en not_active Expired - Lifetime
- 1999-07-23 WO PCT/US1999/014162 patent/WO2000005815A1/en not_active Ceased
- 1999-07-23 EP EP99935344A patent/EP1101285A4/en not_active Withdrawn
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105656824A (en) * | 2015-12-31 | 2016-06-08 | 华为技术有限公司 | Communication device with adjustable bias voltage and communication method |
| CN105656824B (en) * | 2015-12-31 | 2019-01-11 | 华为技术有限公司 | The adjustable communication device of bias voltage and communication means |
| US10320592B2 (en) | 2015-12-31 | 2019-06-11 | Huawei Technologies Co., Ltd. | Bias-voltage-adjustable communications apparatus and communication method |
Also Published As
| Publication number | Publication date |
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| TW463464B (en) | 2001-11-11 |
| KR20010082016A (en) | 2001-08-29 |
| JP4545932B2 (en) | 2010-09-15 |
| EP1101285A1 (en) | 2001-05-23 |
| CA2338564A1 (en) | 2000-02-03 |
| CA2338564C (en) | 2009-12-22 |
| EP1101285A4 (en) | 2001-10-04 |
| KR100619227B1 (en) | 2006-09-05 |
| AU5084099A (en) | 2000-02-14 |
| CN1309835A (en) | 2001-08-22 |
| JP2002521904A (en) | 2002-07-16 |
| HK1040467A1 (en) | 2002-06-07 |
| AU764882B2 (en) | 2003-09-04 |
| HK1040467B (en) | 2005-03-04 |
| WO2000005815A1 (en) | 2000-02-03 |
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