CN114823353A - Method for manufacturing BGA process device of glass substrate - Google Patents

Abstract

The invention provides a BGA process device manufacturing method of a glass substrate. The BGA solder balls of the process device can be seen through the glass substrate, and the bottom of the BGA device can be observed manually without high-end equipment, which can be used for researching BGA reflow soldering The process device of the process can also be used as a process device for studying the BGA underfill insulating adhesive, which can not only save the test cost, but also completely observe the entire experimental process, which is convenient for process test analysis. The invention is used for judging the effect of surface mount reflow soldering of printed board electronic assembly, analyzes the rationality of the reflow soldering temperature curve, adjusts and corrects the reflow soldering curve of the printed board in time, saves the equipment testing cost of high-end X-ray machines, and not only The test cost can be saved, and the entire experimental process can be completely observed, which is convenient for process test analysis, greatly reduces the detection cost of high-end special equipment, and the process test cost is also reduced.

Description

Method for manufacturing BGA process device of glass substrate

Technical Field

The invention relates to the field of electronic components, in particular to a method for manufacturing a BGA process device of a glass substrate.

Background

With the rapid development of integrated circuit packaging technology, BGA (ball grid array) packaged devices are becoming more and more widely used. The BGA package uses the array solder balls at the bottom as the signal transmission terminals, and the quality of the solder balls soldered to the printed board significantly affects the performance of the circuit. For the reliability and shock resistance of the BGA device, it is selected to fill the bottom with a thermally conductive insulating paste. Compared with circuit design engineers, SMT (surface mount technology) process engineers pay more attention to the reflow soldering process of BGA devices and the filling effect of the heat conducting insulating glue, and from the aspect of cost, process engineers may select BGA process devices for SMT process testing. Compared with the conventional BGA device, the BGA process device has the advantages of consistent packaging structure, appearance and material, and no specific electrical property. After performing the process test by using the conventional process device, the process device needs to be inspected and analyzed, for example, the BGA soldering quality is detected by X-ray, and the underfill quality of the BGA device is detected by CT. The detection requires the use of high-end special equipment, resulting in high process test cost. The detection result is only the final result, and no way is available for observing the BGA soldering process and the BGA bottom insulating glue filling process in real time, so that a process device capable of observing the BGA device bottom heat conduction insulating glue filling process in real time is needed.

Disclosure of Invention

In order to overcome the defects of the prior art, the invention provides a method for manufacturing a BGA process device of a glass substrate. The BGA welding balls of the process device can be seen through the glass substrate, the bottom of the BGA device can be observed manually without high-end equipment, the BGA welding ball can be used as the process device for researching the BGA reflow soldering process, the process device for researching the BGA underfill insulation glue can also be used as the process device for researching the BGA reflow soldering process, the test cost can be saved, the whole experimental process can be observed completely, and the process test analysis is facilitated.

The technical scheme adopted by the invention for solving the technical problem comprises the following steps:

step 1: preparing a required glass substrate, wherein the glass substrate is high-temperature-resistant and high-light-transmission glass, the high temperature resistance is higher than 300 ℃, the high-light-transmission index light transmittance is higher than 90%, the glass substrate is sequentially cleaned by adopting acetone, absolute ethyl alcohol and deionized water, the cleaning method is ultrasonic cleaning, and the glass substrate is dried once after the sequential cleaning is finished;

step 2: generating a layer of metal copper on one surface of the glass substrate by using a physical vapor deposition mode;

and step 3: thickening the metal copper subjected to physical vapor deposition in the step 2 to 18-25 μm in an electroplating way;

and 4, step 4: coating a layer of photosensitive curing material on the metal copper, and sequentially carrying out pattern transfer film, ultraviolet exposure and development to enable the curing part of the photosensitive material to cover the metal copper; then, chemically etching to expose the metal copper which is not photosensitive, finally removing the film, removing the photosensitive curing material on the metal copper of the covering pattern, and exposing the metal copper on the glass substrate;

and 5: firstly plating a nickel layer and then plating a gold layer on the metal copper in an electroplating way;

step 6: placing a special solder ball for a BGA device on the surface of the gold layer, heating the glass substrate to a temperature 30-40 ℃ higher than the melting temperature of the solder ball in a refluxing manner, and cooling to room temperature;

and 7: silk-screen printing characters, trademarks and part marks on the glass substrate;

and 8: and cutting the glass substrate into a single BGA process device along the overall dimension direction by using a milling cutter or a cutting cutter wheel or laser, wherein the cutting direction is the peripheral overall dimension edge of the BGA process device, grinding and polishing the edge of the BGA process device, and removing redundant sharp corners and edges to finish the manufacture of the glass-based BGA process device.

In the step 2, the thickness of the metal copper is 0.3-1 μm, the target material adopted by the physical vapor deposition is copper with the purity of more than 99.9%, and the gas adopted by the physical vapor deposition is argon Ar with the purity of more than 99.99%.

In the step 4, the photosensitive curing material is photosensitive glue or photosensitive ink.

In the step 5, the thickness of the nickel layer is 3-5 μm, and the thickness of the gold layer is 0.05-0.1 μm.

In the step 6, the solder ball alloy is Sn63Pb37, and the melting point is 183 ℃.

The invention has the advantages that the glass-based BGA process device can be used as a process device for researching the BGA reflow soldering process, is used for judging the printed board electronic assembly surface mounting reflow soldering effect, analyzes the rationality of a reflow soldering temperature curve by observing the collapse height, the shape, the position form and the like of the glass-based BGA welding ball, timely adjusts and corrects the reflow soldering curve of the printed board, and saves the equipment detection cost of a high-end X-ray machine. Meanwhile, the device can be used as a process device for researching the BGA bottom filling heat conduction insulating adhesive, the filling effect and integrity can be judged through the observation of the heat conduction insulating adhesive filling process, the test cost can be saved, the whole experiment process can be completely observed, and the process test analysis is convenient. The detection of BGA welding quality through X-ray detection is avoided, the effect of filling glue at the bottom of a BGA device is detected through CT, the detection cost of high-end special equipment is greatly reduced, and the process test cost is also reduced.

Drawings

FIG. 1 is a schematic view of a glass substrate according to the present invention.

FIG. 2 is a schematic diagram of the physical vapor deposition of metallic copper according to the present invention.

FIG. 3 is a schematic diagram of the present invention for electroplating thickened copper metal.

FIG. 4 is a schematic view of the present invention of a copper-coated photosensitive material.

FIG. 5 is a schematic illustration of the inventive pattern photocuring.

FIG. 6 is a schematic illustration of the pattern development of the present invention.

FIG. 7 is a schematic diagram of a pattern etch of the present invention.

FIG. 8 is a schematic view of the light-fading sensing material of the present invention.

Fig. 9 is a schematic diagram of the electroplated nickel and gold layers of the present invention.

FIG. 10 is a schematic view of the BGA ball mount solder of the present invention.

FIG. 11 is a schematic view of a stamp mark according to the present invention.

FIG. 12 is a schematic view of the edge cutting of the glass substrate according to the present invention.

FIG. 13 is a schematic view of a completed glass substrate BGA device of the present invention.

The method comprises the following steps of 1-glass, 2-copper, 3-photosensitive film, 4-nickel layer, 5-gold layer, 6-BGA solder ball, 7-mark and 8-BGA cutting edge.

Detailed Description

The invention is further illustrated with reference to the following figures and examples.

The invention provides a method for manufacturing a BGA process device of a glass substrate, which comprises the following steps:

step 1: as shown in fig. 1, preparing a glass substrate 1 with high light transmittance glass with temperature resistance of more than 300 ℃ as a process device, cleaning the glass substrate 1 in an ultrasonic cleaning manner, cleaning with acetone for 10-15 min, cleaning with absolute ethyl alcohol for 10-15 min, cleaning with deionized water for 5-10 min, drying in an oven at 100-120 ℃ for 1-3 h after cleaning.

Step 2: as shown in FIG. 2, a layer of copper 2 is formed on the surface of a glass substrate 1 by physical vapor deposition, the thickness of the copper 2 is 0.3-1 μm, the target material for physical vapor deposition is copper (99.9%), the physical vapor deposition gas is argon (Ar), and the power is 200-500 w.

And step 3: as shown in fig. 3, the metal copper 2 is thickened by electroplating, the thickness of the metal copper 2 is 18-25 μm, the electroplating anode is a copper plate (99.9%), the electroplating solution is an acid sulfate copper electroplating solution, and the component of the electroplating solution is CuSO ₄ 、H ₂ SO ₄ 。

And 4, step 4: as shown in fig. 4 to 8, a photosensitive material 3 (fig. 4) which is an ultraviolet irradiation photosensitive curing material is coated on the metal copper; the photosensitive material is subjected to curing reaction under the action of an ultraviolet light source through the pattern negative film, and the metal copper 2 is covered by a photosensitive curing part (figure 5); in pattern development, Na is used for the uncured portion ₂ CO ₃ The solution is removed, and the metal copper 2 (figure 6) which is not covered by the photosensitive film 3 on the glass substrate 1 is exposed; with acidic CuCl ₂ Soaking the glass substrate 1 in the solution to etch away the exposed copper metal 2 (fig. 7); the solidified photosensitive film 3 was removed with an alkaline NaOH solution to expose the metallic copper 2 on the glass substrate 1 (fig. 8).

And 5: as shown in fig. 9, a nickel layer 4 is electroplated on the metal copper 2, and then a gold layer 5 is electroplated on the nickel layer 4, wherein the thickness of the nickel layer 4 is 3-5 μm, the thickness of the gold layer 5 is 0.05-0.1 μm, and the nickel layer 4 and the gold layer 5 protect the metal copper 2.

Step 6: as shown in fig. 10, a ball-mounting tool is used to mount a solder ball 6 dedicated for BGA on a gold layer 5, wherein the solder ball alloy 6 is Sn63Pb37 or SAC305, and then a glass substrate 1 is reflowed and heated to a temperature 20 to 40 ℃ above the melting temperature of the solder ball 6, soldered, and cooled.

And 7: as shown in fig. 11, a desired mark 7 is printed on the glass substrate 1 by screen printing, and the mark 7 is cured by ink application by heat or ultraviolet curing.

And 8: as shown in fig. 12, individual BGA process devices are cut on the glass substrate 1 along a cutting direction 8 by using a milling cutter and a cutting cutter wheel, wherein the cutting direction 8 is the peripheral edge of the BGA process device, and the peripheral edge of the BGA process device is polished and polished.

To this end, a BAG process device of a glass substrate is completed as shown in fig. 13.

It will be apparent to those skilled in the art from this disclosure that many changes and modifications can be made, or equivalents modified, in the embodiments of the invention without departing from the scope of the invention. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.

Claims (5)

1. A method for manufacturing a BGA process device of a glass substrate is characterized by comprising the following steps:

step 1: preparing a required glass substrate, wherein the glass substrate is high-temperature-resistant and high-light-transmission glass, the high-temperature resistance is higher than 300 ℃, the high-light-transmission index light transmittance is higher than 90%, the glass substrate is sequentially cleaned by acetone, absolute ethyl alcohol and deionized water, the cleaning method is ultrasonic cleaning, and the glass substrate is dried once after the sequential cleaning is finished;

step 2: generating a layer of metal copper on one surface of the glass substrate by using a physical vapor deposition mode;

and step 3: thickening the metal copper subjected to physical vapor deposition in the step 2 to 18-25 μm in an electroplating way;

and 4, step 4: coating a layer of photosensitive curing material on the metal copper, and sequentially carrying out pattern transfer film, ultraviolet exposure and development to enable the curing part of the photosensitive material to cover the metal copper; then, chemically etching to expose the metal copper which is not photosensitive, finally removing the film, removing the photosensitive curing material on the metal copper of the covering pattern, and exposing the metal copper on the glass substrate;

and 5: plating a nickel layer on the metal copper in an electroplating mode, and plating a gold layer;

step 6: placing a special solder ball for a BGA device on the surface of the gold layer, heating the glass substrate to a temperature 30-40 ℃ higher than the melting temperature of the solder ball in a refluxing manner, and cooling to room temperature;

and 7: silk-screen printing characters, trademarks and part marks on the glass substrate;

and 8: and cutting the glass substrate into a single BGA process device along the overall dimension direction by using a milling cutter or a cutting cutter wheel or laser, wherein the cutting direction is the peripheral overall dimension edge of the BGA process device, grinding and polishing the edge of the BGA process device, and removing redundant sharp corners and edges to finish the manufacture of the glass-based BGA process device.

2. The method of claim 1, wherein:

in the step 2, the thickness of the metal copper is 0.3-1 μm, the target material adopted by the physical vapor deposition is copper with the purity of more than 99.9%, and the gas adopted by the physical vapor deposition is argon Ar with the purity of more than 99.99%.

3. The method of claim 1, wherein:

in the step 4, the photosensitive curing material is photosensitive glue or photosensitive ink.

4. The method of claim 1, wherein:

in the step 5, the thickness of the nickel layer is 3-5 μm, and the thickness of the gold layer is 0.05-0.1 μm.

5. The method of claim 1, wherein:

in the step 6, the solder ball alloy is Sn63Pb37, and the melting point is 183 ℃.

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