CN1146973C - Controlled slicing process - Google Patents

Abstract

A technique for forming a thin film of material from a raw material substrate (10). The technique directs energetic particles through the surface of a substrate (10) in a selected manner to a selected depth (20) below the surface, where the particles have a concentration to define particles of a starting substrate material (12) above the selected depth and a crystal lattice at the selected depth. An energy source, such as a pressurized fluid, is directed to a selected region of the feedstock substrate to initiate a slicing action of the substrate (10) at the selected depth (20), whereupon the slicing action creates an expanding slice front to release feedstock material from the remainder of the feedstock substrate.

Description

Controlled Slicing

Cross-references to related applications:

This invention was filed by a tentative application for "Controlled Segmentation Processing" (May 12, 1997, Application No. 60/046276), and by application for "Controlled Segmentation Processing" (Feb 19, 1998, Application No. 09/026115 ), and priority is claimed by the application "Controlled Segmentation Processing" (Feb 19, 1998, Application No. 09/026027, the disclosures of which are hereby incorporated in their entirety in their entirety.

Background of the invention

This invention relates to the manufacture of substrates. More specifically, the present invention provides techniques including methods and apparatus for dicing substrates using, for example, compressed fluids in the manufacture of silicon-insulator substrates for semiconductor integrated circuits. However, it will be appreciated that the present invention has wider applicability, and it can also be applied to substrates for various other devices: multilayer integrated circuit devices, three-dimensional packaging of integrated semiconductor devices, optoelectronic devices, piezoelectric electronics devices, microelectromechanical systems ("MEMS"), sensors, actuators, solar cells, flat panel displays (eg, LCD, AMLCD), biological and biomedical devices, and the like.

Artisans, or rather skilled people, have been making useful objects, tools, or devices from less useful materials for years. In some cases, many objects rely on smaller components or standards to assemble. On the other hand, less useful objects can also be separated into smaller units to improve their utility. Common examples of such items to be separated include substrate structures such as glass plates, diamond, semiconductor substrates, and the like.

These substrate structures are often diced or separated using various techniques. In some cases, the substrate may be slit using a sawing operation. Sawing operations generally rely on rotating blades or tools that cut through the backing material to separate the backing material into two pieces. However, this technique is often extremely "coarse" and generally cannot be used to provide precise segmentation in substrates for the manufacture of delicate tools and components. Additionally, sawing operations often have difficulty separating or cutting extremely hard and/or brittle materials such as diamond or glass.

Accordingly, techniques have been developed for separating these hard and/or brittle materials by means of cutting. For example, in diamond cutting, strong directional thermal/mechanical pulses are preferentially directed along a crystallographic plane of the diamond material. This thermal/mechanical pulse usually causes a cleaving wavefront to propagate along the main crystallographic plane, when the energy level from this thermal/mechanical pulse exceeds the fracture level along the selected crystallographic plane or cleaving occurs.

In glass cutting, the scribe line of the applied tool is often inscribed in a preferred direction on a generally properly amorphous glass material. This scribe creates a region of higher stress surrounding the amorphous glass material. A mechanical force is applied on both sides of the scribe line, which increases the stress along the scribe line until most of the glass material along the scribe line breaks. This breaking completes the slitting process of the glass, which can be used in a variety of applications including domestic use.

While the above techniques are mostly satisfactory when applied to cutting diamond or household glass, they have severe limitations in the manufacture of small complex structures or delicate workpieces. For example, the above techniques are often "very rough" and cannot be applied with high precision in the manufacture of small and precise machine tools and electronic devices. Additionally, the above techniques can be used to separate a large sheet of glass from another, but are often ineffective for separating, or peeling off films from, larger substrates. Furthermore, the techniques described above may often result in more than one cleaved wavefront interfaced along slightly different planes, which is highly undesirable for precision cutting applications.

In view of the foregoing, a cost effective and effective technique for separating thin film material from a substrate is desired.

Summary of the invention

SUMMARY OF THE INVENTION In accordance with the present invention an improved technique is provided for removing film liners from substrates using a controlled slitting operation using compressed fluid or fluid jets. This technique enables the cleaving process of the substrate to be initiated by using controlled energy (e.g., spatial distribution) and conditions selected to enable the cleaving wavefront to be excited and passed through the substrate using single or multiple cleaving regions. Propagation removes film material from the substrate.

In a specific embodiment, the present invention addresses the use of a controlled slitting process with a compressed fluid to form a film material from a raw substrate. The process involves directing energetic particles (e.g., charged or neutral molecules, atoms, or electrons with sufficient kinetic energy) through the surface of the feedstock substrate to a selected depth below the surface, where the particles are in a relatively high concentration to determine the selection Depth Above the thickness of the raw substrate material (eg, a film of separable material). To sever the raw substrate material, the method provides energy to a selected region of the raw substrate to initiate a controlled severing operation in the raw substrate, whereby the slicing operation is made to utilize a propagating fractional wavefront to separate the raw material from The rest of the backing releases the feedstock material.

In most embodiments, cleaving is initiated by subjecting the material to fracture of the material in one region with sufficient energy to cause a cleaving wavefront without uncontrolled fragmentation or bursting. This cleave front formation energy (E _c ) often has to be made lower than the bulk material fracture energy (E _mat ) of each region to avoid comminution or bursting of the material. Directed energy pulse vectors in diamond cutting or scribe lines in glass cutting are, for example, devices in which the cleaving energy is reduced to enable controlled generation and propagation of cleaving wavefronts. The cleaving wavefront is itself a region of higher stress and, once created, its propagation requires lower energy to further cleave the material from this initiation region of fracture. The energy required to propagate the cleave front is called the cleave front propagation energy (Ep). This relationship can be expressed as:

Ec＝Ep+[Cleaved wavefront stress energy]

Controlled chopping is achieved by reducing Ep in one direction which is more favorable than all other directions and limiting the available energy to be lower than Ep in other undesired directions. In any cleaving process, a better cleaving surface is achieved when the cleaving process occurs through only one extended cleave front, although multiple cleave fronts work equally well.

Numerous advantages over the prior art can be realized with the present invention. In particular, the present invention utilizes controlled energy and selected conditions to preferably slit film material from a raw substrate comprising a multi-material interlayer film. This slitting process selectively removes film material from the substrate while preventing the possibility of damaging the film or the remainder of the substrate. Accordingly, the remaining substrate portion can be repeatedly reused for other applications.

Additionally, the present invention employs relatively low temperatures during the controlled dicing process of the thin film to reduce temperature excursions of the separated membrane, raw substrate, or multi-material membrane according to other embodiments. In most cases the controlled slicing process as others can take place eg at room temperature. This lower temperature approach affords greater material and processing latitude such as slitting and bonding materials with significantly different coefficients of thermal expansion. In other embodiments, the present invention limits the energy or stress in the substrate to below the cleave initiation energy, which generally eliminates the possibility of generating random cleave initiation locations or wavefronts. This reduces dicing damage (such as shrinkage cavities, crystal defects, fractures, cracks, segmentation, voids, excessive roughness) caused by previously existing techniques. Furthermore, the present invention also reduces damage caused by higher than desired stress or pressure effects and crystalline regions caused by energetic particles compared to the prior art.

The present invention achieves these and other benefits in the sense of known processing technology. However, a further understanding of the nature and advantages of the present invention may be realized by reference to the ensuing description and accompanying drawings.

The attached drawings are:

1-11 are simplified diagrams illustrating controlled segmentation techniques in accordance with embodiments of the present invention; and

12-18 are simplified cross-sectional views illustrating a method of forming a silicon-insulator substrate in accordance with the present invention.

Specific embodiment description

The present invention provides techniques for removing thin film material from a substrate while preventing possible damage to the thin film material and/or the remainder of the substrate. This thin film material is or can be attached to a target substrate to form, for example, a silicon-insulator wafer. The invention will be better understood with reference to the drawings and the following description.

1. Controlled cutting technology

Figure 1 is a cross-sectional view of a substrate 10 according to the present invention. This diagram is by way of illustration only and does not limit the scope of the claims. Shown as an example, the substrate 10 is a silicon wafer containing a region 12 of material to be removed (separated), which is a relatively uniform film obtained from the substrate material. Silicon wafer 10 includes upper surface 14 , lower surface 16 and thickness 18 . Substrate 10 also has a first side (Side 1) and a second side (Side 2) (which will also be referenced in the following figures). The material region 12 also includes a thickness 20 within the thickness 18 of the silicon wafer. The present invention provides a novel technique for removing material region 12 using the following sequence of steps.

Selected energetic particles 22 are implanted through the upper surface 14 of the silicon wafer to a selected depth which determines the thickness 20 of the region 12 of material known as thin film material. Various techniques can be used to implant energetic particles into silicon wafers. These techniques include ion implantation using, for example, beamline ion implantation equipment from Applied Materials Eaton Corporation, Varian Corporation, and the like. On the other hand, plasma immersion ion implantation ("P111") technique is also used for implantation. Paul K. Chu, Chung Chan, and Nathan W. Cheung: "Current Applications of Plasma Immersion Ion Implantation" (Semiconductor International, PP.165-172, June, 1996) and P.K.Chu, S.Qin, C.Chan, N.W. Chung, and L.A. Larson: "Plasma Immersion Ion Implantation—An Immature Technology for Semiconductor Processing" (MATERIAL SCIENCE AND ENGINEERING REPORTS, A Review Journal, PP.207-280, Volume R17, Nos.6-7, Nov.30, 1996) Examples of plasma implantation techniques are described in , both of which are incorporated herein by reference in their entirety. Furthermore, implantation can also be generated using ion showers. Of course, the technique employed is application dependent.

Depending on the application, particles of lower mass are generally selected to reduce the likelihood of damage to the material region 12 . That is, the less massive particles readily travel through the substrate material to a selected depth without damaging the region of the material through which the particles travel. For example, the less massive particle (or energetic particle) can be almost any charged (eg, positively or negatively charged) and/or neutral atom or molecule, or electron, etc. In a particular embodiment, the particles may be neutral and/or equicharged particles including ions like hydrogen and its isotopes, noble gas ions like helium and its isotopes, and neon. The particles may also be particles derived from compounds such as gases such as hydrogen, water vapour, methane and hydrogen compounds, and other light atomic mass particles. On the other hand, the particles may also be any combination of the above-mentioned particles, and/or ionic and/or molecular species and/or atomic species. The particles generally have sufficient kinetic energy to penetrate through the surface to a selected depth below the surface.

As an example using hydrogen as the implant species into a silicon wafer, a specific set of conditions is applied for the implant process. The amount implanted ranges from about 10 ¹⁵ to about 10 ¹⁸ atoms/cm ² , and preferably the amount is greater than about 10 ¹⁶ atoms/em ² . The implant energy ranges from about 1 keV to about 1 MeV, and is typically 50 keV. The implant temperature is in the range of from about -200 to about 600°C, preferably below 400°C to prevent loss of significant hydrogen ions out of the implanted silicon wafer and the possibility of implant failure and stress. Hydrogen ions can be selectively introduced into the silicon wafer to a selected depth with a precision of about +/-0.03 to +/-0.05 microns. Of course the ion type and processing conditions used depend on the application.

In effect, the implanted particles increase the stress or decrease the fracture energy along a plane parallel to the upper surface of the substrate at the selected depth. This energy depends in part on the implant species and conditions. These particles lower the fracture energy level of the selected depth substrate. This provides for controlled cleavage along the implant plane at selected depths. The energy states of the substrate where implantation occurs at all internal sites are insufficient to induce irreversible fracture (ie, separation or cleaving) within the substrate material. It should be noted, however, that implantation generally does cause a certain amount of defects (eg, microdefects) in the substrate that can be repaired by subsequent thermal treatments, such as warming heat sources or rapid warming heat sources.

FIG. 2 is a simplified energy diagram 200 along a cross-section of implanted substrate 10 in accordance with the present invention. This diagram is by way of illustration only and does not limit the scope of the claims herein. This simplified diagram has a vertical axis 201 representing the energy levels (E) (or auxiliary energies) that contribute to cleaving in the substrate. The horizontal axis 203 represents the depth or distance from the bottom surface of the wafer to the top surface of the wafer. After implanting particles into the wafer, the substrate has an average cleaving energy, denoted E205, which is the amount of energy required to cleave the wafer at various cross-sectional regions along the depth of the wafer. The cleave energy (Ec) is equal to the bulk material fracture energy (E _mat ) in the non-implanted region. At the selected depth 20, the energy ( _Ecz ) 207 is lower because the injected particles mainly break or weaken the bonds in the crystal structure (i.e. the stress increase caused by the presence of the particles also causes the energy (Ecz) 207 of the substrate to drop ) to reduce the energy required to cleave the substrate at the selected depth. The present invention utilizes lower energy (ie, increased stress) at selected depths to cleave the film in a controlled manner.

However, the substrate generally avoids crossing a possible cleaved wavefront or selects the depth Z after the implantation process. Defects or "weak" areas. In these cases, cuts are generally uncontrollable because they are subject to effects such as bulk material inhomogeneities, inherent stresses, and random variations in defects. FIG. 3 is a simplified energy diagram 300 across a cleaved wavefront for an implanted substrate 10 having these defects. This diagram 300 is merely an illustration and does not limit the scope of the claims herein. The graph has a vertical axis 301 representing assist energy (E) and a horizontal axis 303 representing the distance from substrate edge 1 to edge 2, ie, the horizontal axis represents the area along the substrate that cleaves the wavefront. As shown, the cleaving wavefront has two regions 305 and 307, denoted as Zone 1 and Zone 2, respectively, which have a cleaving energy lower than the average cleaving energy (E _cz ) 207 (possibly due to a higher High defect concentration, etc.). Correspondingly, it is very likely that the splitting process starts in one or both of the above-mentioned areas, because each area has a lower splitting energy than the surrounding areas.

Next, referring to FIG. 4, an example of the dicing process of the substrate shown in the above figure will be described. Figure 4 is a simplified top view 400 of multiple shear wavefronts 401, 403 propagating through an implanted substrate. The cleaving wavefront originates in the "weaker" region of the cleaving plane, including regions 1 and 2, in particular. These cleaved wavefronts are randomly generated and propagated as indicated by the arrows. A constraint on using random propagation between multiple cleavefronts is the possibility of having different cleavefronts join along slightly different planes, or form bursts, as will be described in more detail below.

FIG. 5 is a cross-sectional view 500 of a film cleaved from a wafer with multiple cleavage fronts, eg, at regions 1305 and 2307 . This diagram is for illustration only and does not limit the scope of the claims herein. As shown, a cleavage by region 1 connected to a cleavage from region 2 at a region 3309 defined along a slightly different plane may initiate a secondary cleavage or burst 311 along this membrane. Depending on the size of the difference 313, this film may not be of sufficient quality to be suitable for the manufacture of substrates used in integrated circuits or other applications. Substrates with bursts 311 generally cannot be used for processing. Accordingly, it is generally undesirable to use a random state multi-wavefront to singulate a wafer. An example of a technique in which multiple cleaved wavefronts may be formed in random states is described in US Patent No. 5,374,564 assigned to Commissariat A 1, Energie Atomque (France) to Michel Bruel ("Bruel"). Bruel outlines a technique for dicing implanted wafers with global thermal processing (ie thermal processing of the entire plane of the implant) using thermally activated diffusion. Global heat treatment of the substrate usually results in the initiation of independently propagating multiple cleaved wavefronts. In general, Bruel reveals "uncontrollable" slicing operations by means of slicing operations initiated and maintained by a global heat source, which may produce undesired results. These undesired results relate to potential problems such as incomplete connection of cleaved wavefronts, excessively rough surface finish on the surface of the cleaved material due to energy levels greater than required to maintain cleaving, and Various other. The present invention relies on controlled distribution or selective placement of energy on the implanted substrate to overcome the formation of random cleaved wavefronts.

Figure 6 is a simplified cross-sectional view of a substrate implanted with selective placement of cleaving energy in accordance with the present invention. This diagram is by way of illustration only and does not in any way limit the scope of the claims herein. The implanted wafer is subjected to a step of selective energy placement or positioning or targeting resulting in a controlled cleaving operation of the material region 12 at a selected depth 603 . In a preferred embodiment, the selected energy placement occurs near an edge or corner region of the substrate 10 at a selected depth 403 . Energy is used to supply pulses. Examples of energy sources include chemical energy, mechanical energy, electrical sources, and heat sinks or heat sources. Chemical energy sources can come in many different forms such as particles, fluids, gases, or liquids. These chemical sources of energy can also be chemical reactions that increase stress in regions of the material. Chemical energy is introduced as a time-varying, spatially-varying, or continuous flood. In other embodiments, the mechanical energy source is derived from rotational, displacement, compression, expansion, or ultrasonic energy. Mechanical energy can be introduced as a temporally varying, spatially varying, or continuous flood. In other embodiments, the power source, selected by an applied voltage or an applied electromagnetic field, is introduced as a time-varying, spatially-varying flood. In still other embodiments, the thermal energy or heat dissipation source is selected by radiation, convection, or conduction. This heat source can be selected from various ones such as photoelectron beam, fluid jet, liquid jet, gas jet, electric/magnetic field, electron beam, thermo-electric heating, furnace and the like. The heat dissipation source can be selected from fluid jets, liquid jets, gas jets, cryogenic fluids, supercooled liquids, thermo-electric cooling devices, electric/magnetic fields, etc. Similar to the previous embodiments, the heat source is also introduced as a temporally varying, spatially varying, continuous flood. Also, any of the above-described embodiments can be combined or separated according to applications. Of course, the type of energy used depends on the application.

Figure 6 is a simplified cross-sectional view of a substrate implanted with selective placement of cleaving energy in accordance with the present invention. This diagram is by way of illustration only and does not in any way limit the scope of the claims herein. The implanted wafer is subjected to a step of selective energy placement 601 or positioning or aiming, providing a controlled cleaving operation of the material region 12 at a selected depth 603 . In a preferred embodiment, the selection enable arrangement 607 occurs adjacent to an edge or corner region of the substrate 10 at a selection depth 603 . Use energy to provide pulses. Examples of various energy sources include chemical energy, mechanical energy, electrical and thermal source energy. Chemical energy sources can include various types such as particles, fluids, gases, or liquids. These chemical sources of energy may also include chemical reactions to increase stress in regions of material. Chemical energy is introduced as a temporally varying, spatially varying, or continuous flood. In other embodiments, mechanical energy may be derived from rotation, movement, compression, expansion, or ultrasonic energy. This mechanical energy is introduced as a temporally varying, spatially varying, or continuous flood. In yet other embodiments, the applied voltage or applied electromagnetic field selects the power source and is introduced as a temporally varying, spatially varying or continuous flood. In still other embodiments, the source of heat or heat dissipation is selected from radiation, convection, or conduction. Such heat sources can be selected from photoelectron beams, fluid jets, liquid jets, gas jets, electric/magnetic fields, electron beams, thermal-heating, furnaces, and the like. The source of heat dissipation can be selected from fluid jets, liquid jets, gas jets, cryogenic fluids, supercooled liquids, thermo-electric cooling devices, electric/magnetic fields, and the like. Similar to the previous embodiments, the heat source is introduced as a time-varying, air-varying, or continuous flood. Also, any of the above-described embodiments may be combined or separated according to applications. Of course the energy used also depends on the application.

In a particular embodiment, the energy source according to embodiments of the present invention may be a pressurized fluid jet (eg, compressed). Figure 6A illustrates a simplified cross-sectional view of fluid ejection from a fluid nozzle 608 for performing a controlled severing process in accordance with one embodiment of the present invention. The fluid jet 407 (or liquid jet or gas jet) impacts the edge region of the substrate 10 to initiate the dicing process. Fluid ejected from a compressed or pressurized fluid source is directed to a region of selected depth 603 to sever a thickness of material region 12 from substrate 10 using, for example, mechanical, chemical, or thermal services. As shown, the fluid jet separates the substrate 10 into regions 609 and 611 spaced apart from each other at a selected depth 603 . This fluid jet can also be adjusted to initiate and maintain a controlled dicing process to separate material 12 from substrate 10 . Depending on the application, the fluid jets can be adjusted in direction, location and amplitude to achieve the desired controlled slitting process. This fluid jet may be a liquid jet or a gas jet or a combination of liquid and gas.

In a preferred embodiment, the energy source may be a compressive source such as a static compressed fluid. Figure 6B illustrates a simplified cross-sectional view of a compressed fluid source 607 in accordance with one embodiment of the present invention. A source of compressed fluid 607 (eg, compressed liquid, compressed gas) is applied to a sealed chamber 621 around the perimeter or edge of the substrate 10 . As shown, this chamber is closed by means 623, which is sealed by, for example, an O-ring 625, surrounding the outer edge of the substrate. This chamber has a pressure maintained at Pc applied to the edge region of the substrate 10 to initiate the controlled cleaving process at a selected depth of implanted material. The outer surface or front side of the substrate is maintained at a pressure which may be at ambient pressure such as 1 atmosphere or a lower pressure PA. There is a pressure differential between the higher pressure in this chamber and the ambient pressure. This pressure differential exerts a force on the implanted zone at the selected depth 603 . The implanted region at the selected depth is structurally weaker than the surrounding region including any connection regions. Force is applied through a pressure differential until the controlled slitting process starts. The controlled dicing process separates the material thickness 609 from the substrate material 611 to peel the material thickness from the substrate material at a selected depth. In addition, the pressure PC "leverages" the area of material 12 to separate from the substrate material 611 . The pressure in the chamber may also be adjusted to initiate and maintain a controlled cleaving process to separate material 12 from substrate 10 during the cleaving process. Depending on the application, the pressure can be adjusted in magnitude to achieve the desired controlled cleaving process. This fluid pressure can be obtained by liquid or gas or a combination of liquid and gas.

In a specific embodiment, the present invention provides a controlled-propagation slicing. This controlled propagating slicing employs multiple consecutive pulses to initiate and mostly propagate the slicing process 700 , as illustrated in FIG. 7 . This diagram is by way of illustration only and does not limit the scope of the claims herein. As shown, the pulse is directed at the edge of the substrate to propagate a cleaved wavefront toward the center of the substrate to remove a layer of material from the substrate. In this embodiment, an energy source sequentially applies multiple pulses (ie, pulses 1, 2, and 3) to the substrate. Pulse 1701 is directed to the edge 703 of the substrate to initiate the cleaving operation. Pulse 2 705 is also directed at one side edge 707 of Pulse 1 to expand the cleaved wavefront. Pulse 3709 is directed along the extended cleaved wavefront to opposite edge 711 to further separate the layer of material from the substrate. The combination of these pulses provides an operation 713 of controlled dicing of the layer of material from the substrate.

Figure 8 is a simplified illustration of the energy 800 selected by the pulses in the previous embodiment with controlled propagation slicing. This diagram is by way of illustration only and does not limit the scope of the claims herein. As shown, pulse 1 has an energy level above the average cleave energy (E), the energy required to initiate the cleave operation. Pulses 2 and 3 utilize the lower energy levels along the cleaving front to maintain or support the cleaving operation. In a particular embodiment, the pulse is a laser pulse, where the impinging beam through the pulse heats selected regions of the substrate and the thermal pulse gradient results in supplemental stress that synergistically exceeds the cleaving or propagating energy that generates a single cleaving wavefront . In a preferred embodiment, the impinging beam simultaneously heats and induces a thermal pulse gradient that exceeds the cleaving energy forming and propagating energy. Preferably, the impinging beam simultaneously cools and induces a thermal pulse gradient which creates or propagates energy beyond the cleaving energy.

Optionally, the intrinsic energy state or stress of the substrate can be globally boosted towards the energy level required to initiate the cleaving operation, but not sufficient to initiate cleaving prior to directing multiple successive pulses to the substrate in accordance with the present invention operate. The global energy state of the substrate can be raised or lowered by various energy sources such as chemical, mechanical, thermal (heat sink or heat source) or electrical, alone or in combination. Chemical energy can take various forms such as particles, fluids, gases, or liquids. These energy sources may also include chemical reactions to increase stress in regions of material. Chemical energy is referenced as a time-varying, space-varying or continuous flow. In other embodiments, the mechanical energy source is derived from rotational, translational, compressive, expansive, or ultrasonic energy sources. This mechanical energy can be introduced as a temporally varying, spatially varying or continuous flood. In yet other embodiments, the electrical energy source is selected by an applied voltage or an applied electromagnetic field, and is referenced as a temporally varying, spatially varying, or continuous flow. In still other embodiments, the source of heat or heat dissipation is selected by radiation, convection, or conduction. Such heat sources can be selected from photoelectron beams, fluid jets, liquid jets, gas jets, electromagnetic fields, electron beams, thermo-electric heating, and ovens. The source of heat dissipation can be selected from fluid jets, liquid jets, gas jets, cryogenic fluids, supercooled liquids, thermo-electric cooling devices, electromagnetic fields, and the like. Similar to the previous implementation, this heat source can also be used as a temporally varying, spatially varying, or continuous flood. Again, any of the above implementations may be combined or separated, depending on the application. Of course, the type of energy used also depends on the application. As noted, the global energy source increases the energy level or stress in the material region without initiating the equilibration operation in the material region before providing energy to initiate the controlled slicing operation.

In certain embodiments, the energy raising the energy level of the cleaving plane of the substrate beyond its cleaving wavefront propagating energy is not sufficient to cause self-starting of the cleaving wavefront. Specifically, thermal energy sources or sources of heat dissipation in the form of heat or no heat (eg, cooling sources) can be applied globally to the substrate to increase the energy state or stress level of the substrate without initiating splitting of the array. On the other hand, energy sources can also be electrical, chemical or mechanical. Directed energy provides energy application to selected regions of the substrate material to initiate a cleaved wavefront, which propagates itself through the implanted region of the substrate until the thin film material is separated. A variety of different techniques may be employed to initiate the split operation. These techniques are illustrated with the aid of the following figures.

FIG. 9 is a simplified diagram of an energy state 900 for a controlled split operation using a single controlled energy source in accordance with an aspect of the present invention. This diagram is for illustration only and does not limit the scope of these claims. In this embodiment, the energy level or state of the substrate is raised using a global energy source above the energy state for cleave propagation, but below the energy state required to initiate the cleave front. To initiate the cleaving wavefront, an energy source such as a laser pulses the beam toward the edge of the substrate to initiate the cleaving operation. Alternatively, the energy source may be a cooling fluid (eg, liquid, gas) that pulses the cooling medium toward the edge of the substrate to initiate the dicing operation. The global energy source maintains split operation, which generally requires energy levels below the start-up energy.

Figures 10 and 11 illustrate another aspect of the invention. FIG. 10 is a simplified illustration of an implanted substrate 1000 subjected to rotational forces 1001,1003. This image is by way of illustration and not as a limitation on the scope of the claims herein. As shown, the substrate includes an upper surface 1005, a lower surface 1007, and an implanted region 1009 of a selected depth. An energy source utilizes a light beam or heat source to increase the global energy level of the substrate to an energy level above the propagating energy state of the cleaved wavefront, but below the energy state required to initiate the cleaved wavefront. The substrate is subjected to a clockwise rotational force 1001 on the upper surface and a counterclockwise rotational force on the lower surface, which generates stress at the implant region 1009 that initiates the cleaved wavefront. On the other hand, the upper surface can bear the counterclockwise rotation force and the lower surface can bear the clockwise rotation force. Of course, the direction of the force is not important in this embodiment.

Figure 11 is a simplified diagram of the energy states of a controlled slitting operation using rotational force in accordance with the present invention. This diagram is by way of illustration only and does not limit the scope of the claims herein. As noted earlier, the energy level or state of the substrate is raised above the energy state of the cleaved wavefront propagation using a global source of energy (e.g., heat, beam), but below the energy required to initiate the cleaved wavefront state. To activate the cleaved wavefront, mechanical energy means such as rotational force applied to the injection region activates the cleaved wavefront. Specifically, a rotational force applied to the implanted region of the substrate produces zero stress at the center of the substrate and maximum stress at the periphery, substantially proportional to the radius. In this example, the central start pulse causes a radially expanding cleave front to cleave the substrate.

The separated material regions provide a thin film of silicon material for processing. Silicon materials have a finite surface roughness and planar characteristics that are desirable for silicon-insulator substrates. In certain embodiments, the surface roughness of the separated film is less than about 60 nm, or less than about 40 nm, or less than about 20 nm characteristic. Accordingly, the present invention provides a silicon film that can be smoother and more uniform than the prior art.

In a preferred embodiment, the invention is practiced at temperatures lower than those employed in the prior art. Specifically, the present invention eliminates the need to increase the overall substrate temperature to initiate and maintain the cleaving operation as in the prior art. In certain embodiments for silicon wafers and hydrogen implantation, the substrate temperature during the dicing process does not exceed about 400°C. On the other hand, the substrate temperature may not exceed about 350°C during the dicing process. Alternatively, the substrate temperature may be kept substantially below the injection temperature by a heat sink such as a cooling fluid, a cryogenic fluid. Accordingly, the present invention reduces the likelihood of unnecessary damage due to excessive energy release from random cleaved wavefronts, which generally improves the surface quality of the attached surface and/or substrate. Accordingly, the present invention provides for the formation of thin films on substrates with higher overall throughput and quality.

The above embodiments have been described for dicing a thin film of material from a substrate. However, the substrate may be disposed on a workpiece such as a stiffener prior to the controlled dicing process. This workpiece is attached to the upper or implanted surface of the substrate to provide structural support to the film during the controlled dicing process. The workpiece can be attached to the substrate using various bonding or joining techniques such as electrostatic, adhesive, atomic interaction. Some such bonding techniques are described here. This workpiece can be made of dielectric materials such as quartz, glass, sapphire, silicon nitride, silicon dioxide), conductive materials (silicon, silicon carbide, polysilicon, group III/V materials, metals) and plastics (such as polyimide materials) production. Of course, the type of workpiece used will depend on the application.

On the other hand, the substrate with the film to be separated can also be temporarily arranged on a transfer substrate such as a reinforcing plate or the like before the controlled dicing process. This transfer substrate is attached to the top surface or implant surface of the substrate with the thin film to provide structural support to the thin film material during the controlled dicing process. The transfer substrate can be temporarily attached to the substrate with the thin film using various bonding or attachment techniques such as electrostatics, adhesives, atomic interactions. Some such bonding techniques are described here. Transfer substrates can be made of dielectric materials (such as quartz, glass, sapphire, silicon nitride, silicon dioxide), conductive materials (silicon, silicon carbide, polysilicon, group III/V materials, metals), and plastics (such as polyimide-based material) made. Of course, the type of transfer substrate used will depend on the application. Additionally, a transfer substrate may be used to remove film material from the diced substrate following a controlled dicing process.

2. Silicon-insulator processing

The process for fabricating a silicon-insulator substrate according to the present invention can be roughly summarized as follows:

(1) Provide raw silicon wafers (which can be coated with dielectric materials);

(2) introducing particles into the silicon wafer to a selected depth to determine the thickness of the silicon film;

(3) Provide target substrate material (can be coated with dielectric material);

(4) bonding the raw silicon wafer to the target substrate material by bonding the implant surface to the target substrate material;

(5) increase the global stress (i.e. energy) of the implanted region at the selected depth without initiating the slicing operation (optional);

(6) applying stress (i.e., energy) to selected regions of the bonded substrates using fluid jets to initiate a controlled cleaving operation at selected depths;

(7) providing auxiliary energy to the bonded substrates to support a controlled dicing operation in order to release the silicon film thickness from the silicon wafer (optional);

(8) complete the bonding of the raw silicon wafer to the target substrate; and

(9) Polish the surface to the thickness of the silicon film.

The above sequence of steps provides the steps of utilizing energy applied to selected regions of a multilayer substrate structure to form a cleaving wavefront to initiate a controlled cleaving operation in accordance with the present invention. This initiation step begins the cleaving process in a controlled manner with limited energy applied to the substrate. Subsequent propagation of the cleaving operation may be performed by supplying auxiliary energy to selected areas of the substrate to support the cleaving operation, or using energy from the initiation step to provide further propagation of the cleaving operation. This sequence of steps is by way of example only and does not limit the scope of the claims defined herein. Further details regarding the sequence of steps described above are described below with reference to the accompanying figures.

12-18 are simplified cross-sectional views of a substrate undergoing a silicon-on-insulator wafer fabrication process in accordance with the present invention. The process begins by providing a semiconductor substrate similar to a silicon wafer 2100, as shown in FIG. The substrate or stock includes a region 2101 of material to be separated for a relatively uniform film from the substrate material. The silicon wafer includes an upper surface 2103 , a lower surface 2105 , and a thickness 2107 . The material region also includes a thickness (Z ₀ ) within the thickness 2107 of the silicon wafer. Optionally, a dielectric layer 2102 (such as silicon nitride, silicon oxide, silicon oxynitride) covers the upper surface of the substrate. This process provides a novel technique for isolating regions of material 2101 for the fabrication of silicon-on-insulator wafers using the following sequence of steps.

Selected energetic particles 2109 are implanted through the upper surface of the silicon wafer to a selected depth that determines the thickness of a region of material known as a thin film of material. As shown, the particles have a desired concentration 2111 at the selected depth (Z ₀ ). Various techniques can be used to inject energetic particles into silicon wafers. These techniques include ion implantation using, for example, beamline ion implantation equipment manufactured by companies such as Applied Materials, Eaton Corporation, Varian, and the like. Alternatively, implantation may utilize plasma immersion implantation ("PIII") techniques. In addition, implantation can also be performed by ion blasting. Of course, the technique used depends on the application.

Depending on the application, generally smaller mass particles are selected to reduce the likelihood of damage to the material region. That is, particles of lesser mass readily travel through the substrate material to a selected depth without substantially damaging the region of material through which the particles travel. For example, the less massive particles (ie high energy particles) can be almost any charged (eg positive or negative) and/or neutral atoms or molecules or electrons, etc. In certain embodiments, the particles may be neutral and/or charged particles including ions of hydrogen and its isotopes, ions of noble gases such as helium and its isotopes, and neon. The particles may also be particles obtainable from compounds such as gases, like hydrogen, water vapor, methane, and other hydrogen compounds, and other light atomic mass particles. On the other hand, the particles may also be any combination of the above-mentioned particles, and/or ionic and/or molecular forms and/or atomic forms.

The process employs the steps of bonding the implanted silicon wafer to a workpiece or target wafer, as shown in FIG. 13 . The workpiece can also be various other types of substrates such as dielectric materials (such as quartz, glass, silicon nitride, silicon dioxide), conductive materials (silicon, polysilicon, group III/V materials, metals) and plastics (such as those made of polyimide-based materials). But in this example the workpiece is a silicon wafer.

In certain embodiments, the silicon wafers are joined or fused together using a low temperature heat treatment step. This low temperature thermal control process generally ensures that the injected particles do not impose undue stress in the material region that could result in an uncontrolled severing operation. In one aspect, the low temperature bonding process is performed by a self bonding process. Specifically, one wafer is stripped to remove oxidation (ie, one wafer is not oxidized). The cleaning solution treats the crystal surface to form 0-H bonds on the wafer surface. An example of _a solution used _to clean the wafer is the mixture _H2O2 - _H2SO4 . The dryer dries the wafer surface to remove any residual liquid or particles from the wafer surface. Self-bonding is performed by placing the cleaned wafer face-to-face with an oxidized wafer.

On the other hand, the self-bonding process can also be performed by activating one of the wafer surfaces to be bonded by plasma cleaning. Specifically, plasma cleaning activates the wafer surface with plasma derived from gases such as argon, ammonia, neon, water vapor, and oxygen. The activated wafer surface 2203 is placed with another wafer surface having an oxide layer overlay 2205 thereon. These wafers are sandwich structures with exposed wafer faces. A selected pressure is applied to the exposed face of each wafer to self-bond one wafer to the other.

On the other hand, bonding one wafer to another employs an adhesive disposed on the surface of the wafers. Such adhesives include epoxy resins, polyimide-type materials, and the like. Spin-on-glass layers can be used to bond one wafer surface to the other. These spin-on-glass ("SOG") materials include siloxanes or silicates, often mixed with alcohol-based solvents and the like. SOG may be a desirable material because low temperatures (eg, 150°-250° C.) are often required to solidify SOG after being applied to the wafer surface.

On the other hand, various other cryogenic techniques are also used to join the source wafer to the target wafer. For example, electrostatic bonding techniques can be used to bond two wafers together. Specifically, one or both wafer surfaces are simultaneously charged to attract the other wafer surface. Also, the source wafer can be fused to the target wafer using various known techniques. Of course, the technique used depends on the application.

After bonding the wafers into a sandwich structure 2300, as shown in FIG. Controlled dicing is performed using energy 2301, 2303 that selectively distributes or positions or targets energy sources to the source and/or target wafers. For example, a pulse of energy may be used to initiate the splitting operation. This pulse is provided using energy sources including mechanical energy, chemical energy, heat dissipation or heat sources, and electrical power.

The controlled slicing operation is initiated by any of the previously noted techniques, etc., as illustrated by FIG. 14 . For example, a process for initiating a controlled cleaving operation utilizes the step of providing energy 2301, 2303 to a selected region of the substrate to initiate a controlled cleaving operation at a selected depth (Z ₀ ) of the substrate, thereby utilizing the propagation The wavefront is cleaved such that the cleaving operation acts to release the portion of the substrate material to be separated from the substrate. In a particular embodiment, this method uses a single pulse to start the dicing operation, as noted previously. Alternatively, this method may also utilize an initiation pulse followed by another pulse or successive pulses to selected regions of the substrate. Alternatively, the method may also provide a pulse to initiate a cleaving operation sustained by energy swept across the substrate. Also energy may be scanned across selected regions of the substrate to initiate and/or support controlled dicing operations.

Optionally, the energy or stress of the substrate material is increased in accordance with the present invention toward an energy level required to initiate the cleaving operation, but not sufficient to initiate the cleaving operation prior to directing a pulse or multiple consecutive pulses to the substrate. The global energy state of the substrate can be raised or lowered using various energy sources such as chemical, thermal (heat sink or heat source), or electrical, alone or in combination. Chemical energy sources may include particles, fluids, gases, or liquids. These energy sources may also include chemical reactions to increase the stress in the material region. This chemical energy is introduced as a temporally varying, spatially varying, or continuous flood. In other embodiments, the mechanical energy is derived from rotational, displacement, compression, expansion, or ultrasonic energy. This mechanical energy can be introduced as a temporally varying, spatially varying, or continuous flood. In still other embodiments, the energy source is selected from an applied voltage or an applied electromagnetic field, introduced as a temporally varying, spatially varying, or continuous flood. In still other embodiments, the source of heat or heat dissipation is selected by radiation, convection, or conduction. The heat source can be selected from photoelectron beam, fluid jet, liquid jet, gas jet, electric/magnetic field, electron beam, thermo-electric heating, and furnace. The heat dissipation source can be selected from fluid jets, liquid jets, gas jets, cryogenic fluids, ultra-cooled liquids, thermo-electric cooling devices, electric/magnetic fields, and the like. Similar to the previous embodiments, this heat source is introduced as a temporally varying, spatially varying, or continuous flood. Also, any of the above-described embodiments may be combined or separated according to applications. Naturally, the type of energy used depends on the application. As noted, the global energy source increases the energy level or stress in the region of material without initiating the slicing operation in the region of material before providing a controlled slicing operation to initiate.

In a preferred embodiment, the method maintains a temperature below the temperature at which the particles are introduced into the substrate. In some embodiments, the substrate temperature is maintained between -200 and 450° C. during the step of directing energy to initiate propagation of the cleaving operation. The substrate temperature may also be maintained at a temperature below 400°C or below 350°C. In a preferred embodiment, the method employs a heat sink to initiate and maintain the cleaving operation, which occurs at conditions well below room temperature.

In an alternative preferred embodiment, the mechanical and/or thermal energy source may be a pressurized (eg, compressed) fluid jet in accordance with an embodiment of the present invention. This fluid jet (or liquid jet or gas jet) impacts the edge region 2300 of the substrate to initiate a controlled cleaving operation. A fluid jet from a compressed or pressurized fluid energy source is introduced into a region of a selected depth 2111 to sever the thickness of the substrate region 2101 from the substrate 2100 . The fluid jets are separated 2101 by the substrate 2100, which are separated from each other at a selected depth 2111. The fluid jet can be adjusted to initiate and maintain a controlled cleaving process to separate material 2101 from substrate 2100 . Depending on the application, the fluid jets can be adjusted in direction, location and amplitude to achieve the desired controlled dicing process.

According to some embodiments the final bonding step occurs between the target wafer and the thin film of the material region, as illustrated in FIG. 15 . In one embodiment, a silicon wafer has a capping layer of silicon dioxide that is thermally grown on the surface prior to cleaning the thin film of material. The silica can also be formed using various other techniques such as chemical evaporation. The silicon dioxide between the wafer surfaces is thermally fused together during this process.

In some embodiments, the oxidized silicon surfaces from the thin film of the target wafer or material region (of the source wafer) are further pressed together and subjected 2401 to an oxidizing environment. The oxidizing environment can be steam oxidation, hydrogen oxidation, etc. in a diffusion furnace. The combination of pressure and oxidizing environment fuses the disilicon wafers together at the oxidized surface or interface 2305 . These embodiments typically require high temperatures (eg, 700C).

On the other hand, the two silicon surfaces can also be further pressed together and subjected to the applied voltage between the two wafers. The applied voltage increases the temperature of the wafers to promote bonding between the wafers. This technique limits the amount of crystalline defects introduced into the silicon wafers during the bonding process because essentially no mechanical force is required to initiate the bonding process between the wafers. Of course, the technique used depends on the stress.

After wafer bonding, silicon-on-insulator has a target substrate with a cover film of silicon material and an interlayer oxide layer between the target substrate and the silicon film, as also illustrated in FIG. 15 . The surface of the separated film of silicon material is often rough and requires polishing. Polishing is performed using a combination of grinding and/or polishing techniques. In some embodiments, the step of grinding the separation surface employs a technique such as an abrasive spinning on the separation surface to remove any imperfections or surface roughness therefrom. A machine such as the "Back Grinder" manufactured by the company known as Disco provides this technique.

In addition, chemical mechanical polishing or planarization ("CMP") technology can also polish the surface of the separation membrane, as shown in FIG. 16 . In CMP, the slurry mixture attached to the rotating platen (2503) is passed directly to the polishing surface 2503. This slurry mixture can be conveyed to the polishing surface via an orifice connected to a slurry source. This slurry is often a solvent containing _abrasives and oxidizing agents such as _H2O2 , _KIO3 , ferric nitrate. Abrasives are often borosilicate glass, titanium dioxide, titanium nitride, alumina, alumina, titanium nitrate, cerium oxide, silica (colloidal silica), silicon nitride, silicon carbide, graphite, all-steel stone, and their any mixture. This abrasive is mixed in a solvent such as deionized water and an oxidizing agent. Preferably the solvent is acidic.

Such acidic solvents typically interact with the silicon material from the wafer during the polishing process. Polishing is best done with polyurethane polishing discs. Such polishing discs are, for example, manufactured by Rodel and sold under the trade name IC-1000. The polishing disc rotates at a selected speed. The carrier head picking up the target wafer with the membrane applies a selected amount of pressure on the backside of the target wafer to apply the selected force to the membrane. The polishing process removes substantially a selected amount of film material, which provides a relatively smooth film surface 2601 for subsequent processing, as illustrated in FIG. 17 .

In some embodiments, the oxide film 2406 masks a film of material covering the target wafer, as shown in FIG. 15 . This oxide layer is formed during the thermal annealing step and it is used in the above description to permanently bond the material film to the target wafer. In these embodiments, the polishing process is selectively tuned to first remove the oxide and then polish the film to complete the process. Of course, this sequence of steps depends on the specific application.

In a particular embodiment, a silicon-insulator substrate is subjected to a series of processing steps for forming integrated circuits thereon. These processing steps are described in "Silicon Processing in the VLSI Era" by S. Wolf, Vol. 2, Lattice Press, 1990, which is hereby incorporated by reference in its entirety. A complete wafer portion 2700 including integrated circuits is shown in FIG. 18 . As shown, wafer portion 2700 includes active device region 2701 and isolation region 2703 . These active devices are field effect transistors each having a source/drain region 2705 and a gate 2707 . A dielectric insulating layer 2709 is defined overlying the active device to insulate the active device from any overlying layers.

Although the above description has been directed to silicon wafers, other substrates may be used. For example, the substrate can be almost any single crystal, polycrystalline or even amorphous substrate. In addition, the substrate can also be made of III/V materials such as gallium silicide, gallium nitride (GaN) and the like. Multilayer substrates may also be used in accordance with the invention. Multilayer substrates include silicon-insulator substrates, various sandwich layers on semiconductor substrates, and many other types of substrates. In addition, the above embodiments generally start the controlled cutting operation by providing pulse energy. This pulse can be replaced by scanning energy across a selected area of the substrate to initiate a controlled cleaving operation. A controlled dicing operation can also be maintained by scanning through selected areas of the substrate. Alternatives, modifications and variations that may be employed in accordance with the present invention will be readily apparent to those skilled in the art.

While the above is a complete description of specific embodiments, various modifications, alternative constructions, and equivalents may be employed. Therefore, the above description and illustrations should not be used to limit the scope of the invention, which is determined by the appended claims.

Claims (48)

1, a kind of processing method that is used for forming material membrane by substrate, described processing comprises step:

The surface of particle by substrate directed into next selected depth of described surface, have finite concentration so that determine on the selected degree of depth, to want separated substrate material at the described particle of described selected depth; With

A selection area that provides energy to arrive described substrate is propagated the described material of the cutting described substrate release portion of wave surface cause to start the controlled cleavage operation in selected depth described in the described substrate, described cutting is operated to utilize.

2, the described processing of claim 1 is characterized in that described particle is from being obtained by the source of selecting one group of hydrogen, helium, water vapour, methane, hydrogen compound and other light atom mass particles.

3, the described processing of claim 1 is characterized in that described particle is by choosing in one group of neutral molecule, neutral atom, charged molecule, electrically charged atom and the electronics.

4, the described processing of claim 1 is characterized in that described particle is a high energy.

5, the described processing of claim 1 is characterized in that described high energy particle has enough kinetic energy and penetrates the described selected degree of depth under the described surface of arrival, described surface.

6, the described processing of claim 1 is characterized in that the described step that energy is provided keeps the described material of the described cutting operation described substrate separation of cause so that material membrane to be provided.

7, the described processing of claim 1, it is characterized in that the described step that energy is provided increase the controlled stress in the described material and keep described cutting operation so as by the described material of described substrate separation so that material membrane to be provided.

8, the described processing of claim 1 is characterized in that described guiding step forms one group of atomic link damage of described substrate in described selected depth, strand displacement, weakening and break and the damage of selecting in the chain.

9, the described processing of claim 8 is characterized in that described damage causes the stress in described substrate material.

10, the described processing of claim 8 is characterized in that described damage reduces the ability that described substrate material meets with stresses and do not have the possibility of the described material of cutting.

11, the described processing of claim 1 is characterized in that described propagation cutting wave surface comprises a plurality of cutting wave surfaces.

12, the described processing of claim 1 is characterized in that described guiding step is because of providing described particle to cause the stress of the described material sections of the described degree of depth in described selected depth.

13, the described processing of claim 1 is characterized in that described energy is selecteed from be made up of thermal source, heat abstractor, source of mechanical energy, chemical energy source and power supply one group.

14, the described processing of claim 13 is characterized in that described chemical energy source is provided by particle.

15, the described processing of claim 13 is characterized in that described chemical energy source comprises a chemical reaction.

16, the described processing of claim 13 is characterized in that described chemical energy source is selecteed one group from being changed by fluid source, time that the energy, space change the energy and the energy is formed continuously.

17, the described processing of claim 31 is characterized in that described source of mechanical energy is selecteed from be made up of the rotation energy, the mobile energy, the compression energy, the expansion energy and ultrasonic energy source one group.

18, the described processing of claim 13 is characterized in that described source of mechanical energy is selecteed one group from being changed by fluid source, time that the energy, space change the energy and the energy is formed continuously.

19, the described processing of claim 13 is characterized in that described power supply is selecteed from be made up of voltage source that applies and the calutron that applies one group.

20, the described processing of claim 13 is characterized in that described power supply is selecteed one group from being changed by fluid source, time that the energy, space change the energy and the energy is formed continuously.

21, the described processing of claim 13 is characterized in that described thermal source or described heat abstractor provide energy by radiation, convection current or conduction.

22, the described processing of claim 21 is characterized in that described thermal source is from by photon beam, and fluid sprays, gas blowing, and electron beam, a hot electric heater, selecteed in the group that heating furnace and smelting furnace are formed.

23, the described processing of claim 21 is characterized in that described heat abstractor is from by the liquid jet, gas blowing, and cryogen, supercool is liquid but, and a hot electric cooling device and supercool are but selecteed in the group of gas composition.

24, the described processing of claim 23 is characterized in that described thermal source is selecteed one group from being changed by fluid source, time that the energy, space change the energy and the energy is formed continuously.

25, the described processing of claim 1 is characterized in that during described guiding step, described substrate temperature is maintained at-200 to the temperature range between the 450C.

26, the described processing of claim 1 is characterized in that the described step of energy that provides is maintained at below the temperature that is lower than 400 ℃.

27, the described processing of claim 1 is characterized in that the described step of energy that provides is maintained at below the temperature that is lower than 350 ℃.

28, the described processing of claim 1 is characterized in that described guiding step is the beam line ion implantation step.

29, the described processing of claim 1 is characterized in that described guiding step is the plasma immersion ion implantation step.

30, the described processing of claim 1 comprises that also surface with described surface combination to a target substrate of described substrate is to form the step of a stack of assembly.

31, the described processing of claim 30, electrostatic pressure carries out by applying between described substrate and described target substrate to it is characterized in that described integrating step.

32, the described processing of claim 30, bonding material carries out by applying between described substrate and described target substrate to it is characterized in that described integrating step.

33, the described processing of claim 30 is characterized in that what described integrating step was undertaken by an activated surface between described substrate and described target substrate.

34, the described processing of claim 30 is characterized in that what described integrating step was undertaken by the interatomic bond between described substrate and described target substrate.

35, the described processing of claim 30 is characterized in that what described integrating step was undertaken by the rotation on glass between described substrate and described target substrate.

36, the described processing of claim 30 is characterized in that what described integrating step was undertaken by the polyimides between described substrate and described target substrate.

37, the described processing of claim 1 is characterized in that described substrate is for being made by the material of one group of silicon, diamond, quartz, glass, sapphire, carborundum, dielectric, the III/V of family material, plastics, ceramic material and the selection of multiple stratification substrate.

38, the described processing of claim 1 is characterized in that described surface is the plane.

39, the described processing of claim 1 is characterized in that described surface is bending or annular.

40, the described processing of claim 1 is characterized in that described substrate is a silicon chip, and described silicon chip comprises the overlapping layer of a dielectric material, and described selected depth is below described dielectric material.

41, the described processing of claim 40 is characterized in that described dielectric material is selecteed from the group of being made up of oxide material, nitride material or oxide/nitride material.

42, the described processing of claim 1 is characterized in that described substrate comprises an overlapping layer of electric conducting material.

43, the described processing of claim 42 is characterized in that described electric conducting material is from by the brilliant silicon compounds of metal, many metal levels, aluminium, tungsten, titanium, titanium nitride, Complex, polysilicon, copper, indium tin oxide, silicon compounds, platinum, gold, silver and amorphous silicon.

44, the described processing of claim 1 is characterized in that described guiding step provides homogeneous granules to distribute at described selected depth along a plane of described material area.

45, the described processing of claim 44 is characterized in that described uniform distribution is the uniformity less than 5%.

46, a kind ofly form the method for a material membrane from silicon single crystal wafer, this method includes step:

Hydrogen ion is injected to this subsurface selected depth in a surface by this silicon single crystal wafer, and these hydrogen ions are assembled at this selected depth has a concentration to determine treating removed one deck above this selected depth;

With this surface combination to one workpiece; And

Select the zone to provide a controlled splitting of this selected depth of energy to move for one of this substrate so that this layer separates from this substrate to be enabled in this substrate.

47, a kind ofly form the method for a material membrane from silicon single crystal wafer, this method includes step:

Hydrogen ion is injected to this subsurface selected depth in a surface by this silicon single crystal wafer, and these hydrogen ions are assembled at this selected depth has a concentration to determine treating removed one deck above this selected depth; And

One of this substrate select regional guidance one high-pressure injection fluid with a controlled splitting action of this selected depth of being enabled in this substrate so that this layer separate from this substrate.

48, the described method of claim 47 is characterized in that this high-pressure injection fluid is heated to more than the chip temperature of this silicon single crystal wafer.

Images