CN114649181A - Method for forming corrosion-resistant coating, semiconductor component and plasma processing apparatus - Google Patents
Method for forming corrosion-resistant coating, semiconductor component and plasma processing apparatus Download PDFInfo
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- CN114649181A CN114649181A CN202011516689.5A CN202011516689A CN114649181A CN 114649181 A CN114649181 A CN 114649181A CN 202011516689 A CN202011516689 A CN 202011516689A CN 114649181 A CN114649181 A CN 114649181A
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- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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Abstract
A method of forming a corrosion-resistant coating, a semiconductor component, and a plasma processing apparatus, the method of forming a corrosion-resistant coating comprising: providing a component body; placing the part body in an electrolytic bath for electrochemical reaction, wherein electrolyte in the electrolytic bath comprises hydrogen ions and yttrium ions, and forming a corrosion-resistant coating on the surface of the part body, wherein the corrosion-resistant coating comprises an yttrium aluminum oxide coating; and carrying out hole sealing treatment on the yttrium aluminum oxide compound coating to form a crystallized yttrium aluminum oxide compound coating. The corrosion-resistant coating has strong plasma corrosion resistance.
Description
Technical Field
The present invention relates to the field of semiconductors, and more particularly, to a method for forming a corrosion-resistant coating on a surface of a component body, a semiconductor component, and a plasma processing apparatus.
Background
In the manufacturing process of semiconductor devices, plasma etching is a critical process for processing a wafer into a design pattern.
In a typical plasma etch process, a process gas (e.g., CF)4、O2Etc.) form a plasma under Radio Frequency (RF) excitation. The plasma is subject to physical bombardment and chemical reaction with the surface of the wafer after the action of an electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, so that the wafer with a specific structure is etched.
However, during the plasma etching process, the physical bombardment and chemical reaction also act on all the parts inside the etching chamber that are in contact with the plasma, causing corrosion. For workpieces located in etch chambers, it is common to apply some plasma resistant coating (e.g., Y)2O3Coating) to protect the workpiece from corrosion. However, with the process requirements Y2O3The coatings also need to be improved. Therefore, there is an urgent need in the industry to produce a corrosion-resistant coating with excellent performance on the surface of the component body to resist the corrosion of the plasma.
Disclosure of Invention
The invention provides a method for forming a corrosion-resistant coating on the surface of a part body, a semiconductor part and a plasma processing device, so as to improve the corrosion resistance of the corrosion-resistant coating to plasma.
In order to solve the above technical problems, the present invention provides a method for forming a corrosion-resistant coating on a surface of a component body, comprising: providing a component body; placing the part body in an electrolytic tank for electrochemical reaction, wherein electrolyte in the electrolytic tank comprises hydrogen ions and yttrium ions, and forming a corrosion-resistant coating on the surface of the part body, wherein the corrosion-resistant coating comprises an yttrium aluminum oxide compound coating; and carrying out hole sealing treatment on the yttrium aluminum oxide compound coating to form a crystallized yttrium aluminum oxide compound coating.
Optionally, the electrolyte includes: acid solution and yttrium source solution.
Optionally, the acid solution comprises: at least one of oxalic acid, phosphoric acid or sulfuric acid; the yttrium source solution comprises: at least one of nitroyttrium, yttrium sulfate, or yttrium chloride.
Optionally, the electrolytic cell comprises a cathode and an anode; the cathode is platinum and the anode is aluminum; the electrochemical reaction generated on the surface of the cathode is 2H++2e-→H2The chemical reaction on the surface of the anode is as follows: 4OH-+4e-→2H2O+O2；2Al+3[O]→Al2O3+1675.7KJ，5Al+3Y+12[O]+1675.7KJ→Y3Al5O12。
Optionally, the PH range of the electrolyte is: 3 to 6.8; the mass fraction of the yttrium source in the electrolyte is as follows: 10 wt% -50 wt%.
Optionally, the corrosion-resistant coating formed by the electrochemical reaction is in a weakly crystalline or amorphous state and contains nano-scale micropores.
Optionally, the hole sealing treatment is a high-temperature steam hole sealing process; the high-temperature steam hole sealing process comprises high-temperature steam.
Optionally, the process parameters of the high-temperature steam hole sealing process include: the set hole sealing temperature range is 120-200 ℃, and the steam flow rate is 10-50 standard ml/min.
Optionally, the hole sealing treatment is an atomic layer deposition hole sealing process; the atomic layer deposition hole sealing process comprises the following steps: water vapor and a yttrium-based metal organic source; the yttrium-based metal-organic source comprises: yttrium species of YK1K2K3, K1, K2 and K3 are: at least one of a halide, a carbonyl, a cyclopentadiene, an acetamide, acetic acid, an amidine salt, or a diazadiene.
Optionally, the process parameters of the atomic layer deposition hole sealing process include: the hole sealing temperature ranges from 120 ℃ to 250 ℃, and the ratio of the flow rate of the water vapor to the flow rate of the yttrium-based metal organic source is 1: 0.5-1: 8.
Optionally, the thickness of the corrosion-resistant coating is: 10 to 500 microns.
Correspondingly, the invention also provides a semiconductor component, comprising: a component body; the corrosion-resistant coating is positioned on the surface of the part body, and comprises an yttrium aluminum oxide compound coating.
Optionally, the corrosion-resistant coating includes a (420) crystal plane and a (211), (321), (422), (521), (532) crystal plane.
Optionally, the ratio of the (420) crystal plane to other crystal planes ranges from: 1: 0.01-1: 0.1.
Correspondingly, the invention also provides a plasma processing device, comprising: a reaction chamber for forming a plasma environment therein; the semiconductor parts are positioned in the reaction chamber and exposed to the plasma environment.
Optionally, the plasma environment comprises at least one of fluorine, chlorine, oxygen, or hydrogen plasma.
Optionally, the plasma processing apparatus is a plasma etching apparatus or a plasma cleaning apparatus.
Optionally, when the plasma processing apparatus is an inductively coupled plasma processing apparatus, the components and parts include: at least one of a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly, a cover ring, a focus ring, an insulating ring, or a plasma confinement device.
Optionally, when the plasma processing apparatus is a capacitively-coupled plasma processing apparatus, the components include: at least one of a shower head, an upper grounding ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic chuck assembly, a lower grounding ring, a cover ring, a focus ring, an insulating ring or a plasma confinement device.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
according to the method for forming the corrosion-resistant coating on the surface of the part body, provided by the technical scheme of the invention, firstly, an yttrium aluminum oxide coating is formed on the surface of the part body through an electrochemical reaction, the yttrium aluminum oxide coating is in a weak crystalline state or an amorphous state, and then, the yttrium aluminum oxide in the weak crystalline state or the amorphous state is converted into a crystalline yttrium aluminum oxide through hole sealing treatment. The crystallized yttrium aluminum oxide compound is used as a corrosion-resistant coating, which is beneficial to improving the bombardment resistance of the part body to plasma and prolonging the service life of the part body.
Drawings
FIG. 1 is a schematic view of a plasma processing apparatus according to the present invention;
FIG. 2 is a schematic view of another plasma processing apparatus according to the present invention;
FIG. 3 is a process flow diagram of the present invention for forming a corrosion-resistant coating on the surface of a component body;
FIGS. 4 and 5 are schematic structural views of steps of forming a corrosion-resistant coating on a surface of a component body according to the present invention;
FIG. 6 is a schematic structural view of another embodiment of the present invention for forming a corrosion-resistant coating on a surface of a component body;
FIG. 7 is an X-ray diffraction pattern of yttrium aluminum oxide formed by the method of the present invention and other methods.
Detailed Description
As described in the background art, the performance of the corrosion-resistant coating yttria needs to be further improved, and for this reason, the present invention is directed to a method for forming a corrosion-resistant coating on the surface of a component body, the formed corrosion-resistant coating being a crystalline yttrium aluminum oxide compound having good corrosion resistance, as described in detail below:
FIG. 1 is a schematic structural diagram of a plasma processing apparatus according to the present invention.
Referring to fig. 1, the plasma reaction apparatus includes: the reaction chamber 100 is a plasma environment inside the reaction chamber 100, and the semiconductor component and the inner chamber wall of the reaction chamber 100 are exposed to the plasma environment, wherein the plasma includes at least one of F-containing plasma, Cl-containing plasma, H-containing plasma or O-containing plasma.
The plasma reaction apparatus further includes: the plasma processing device comprises a base 101, wherein the base 101 is used for bearing a substrate W to be processed, and plasma is used for processing the substrate W to be processed. Since plasma has strong corrosiveness, in order to prevent the surface of the semiconductor component from being corroded by plasma, it is necessary to coat the surface of the component body with a corrosion-resistant coating.
In this embodiment, the plasma reaction apparatus is a capacitively coupled plasma reaction apparatus, and accordingly, the semiconductor component exposed to the plasma environment includes: at least one of a showerhead 102, an upper ground ring 104, a moving ring, a gas distribution plate 105, a gas baffle plate, an electrostatic chuck assembly 103, a lower ground ring 106, a cover ring 107, a focus ring 108, an insulator ring, and a plasma confinement device 109.
FIG. 2 is a schematic view of another plasma processing apparatus according to the present invention.
In this embodiment, the plasma reaction apparatus is an inductively coupled plasma reaction apparatus, and accordingly, the semiconductor component exposed to the plasma environment includes: at least one of a ceramic plate, an inner liner 600, a gas nozzle 601, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly 602, a cover ring 603, a focus ring 604, an insulating ring, and a plasma confinement device 605.
In the plasma etching process, physical bombardment and chemical reaction also act on all semiconductor parts in the etching cavity, which are in contact with plasma, so that the semiconductor parts are corroded, and the surface structure is damaged after being exposed in the plasma corrosion environment for a long time, so that the body components are separated out, and are separated from the surface to form micro particles, so that the wafer is polluted. The semiconductor system has severe requirements for micro particle contamination, for example, the number of particles larger than 45nm is 0, and the sticking rate is even lower than 10, so that it is necessary to coat the surface of the component body in the plasma reaction apparatus with a corrosion-resistant coating to resist the corrosion of plasma.
In this embodiment, the corrosion-resistant coating includes an yttrium aluminum oxide coating, the yttrium aluminum oxide coating is crystalline, and the crystalline yttrium aluminum oxide coating has a relatively high corrosion resistance, so that the corrosion resistance of the component body by the plasma is favorably prevented, and the service life of the component body is favorably prolonged.
The following describes in detail the method for forming the corrosion-resistant coating on the surface of the component body:
fig. 3 is a process flow diagram of forming a corrosion-resistant coating on the surface of the component body according to the present invention.
Referring to fig. 3, step S1: providing a component body; step S2: placing the part body in an electrolytic tank for electrochemical reaction, wherein electrolyte in the electrolytic tank comprises hydrogen ions and yttrium ions, and forming a corrosion-resistant coating on the surface of the part body, wherein the corrosion-resistant coating comprises an yttrium aluminum oxide compound coating; step S3: and carrying out hole sealing treatment on the yttrium aluminum oxide compound coating to form a crystallized yttrium aluminum oxide compound coating.
The details are as follows:
fig. 4 and 5 are schematic structural views of steps of forming a corrosion-resistant coating on the surface of a component body according to the present invention.
Referring to fig. 4, a component body 20 is provided; the component body 20 is placed in an electrolytic bath containing hydrogen ions and yttrium ions for electrochemical reaction, and a corrosion-resistant coating 21 including an yttrium aluminum oxide coating is formed on the surface of the component body 20.
The material of the part body 20 is Al or Al2O3Si or SiC.
The electrolytic cell comprises a cathode and an anode; the cathode is platinum, the anode is aluminum, and the electrolyte comprises: an acid solution and a source of yttrium solution, the acid solution comprising: at least one of oxalic acid, phosphoric acid or sulfuric acid; the yttrium source solution comprises: at least one of nitroyttrium, yttrium sulfate or yttrium chloride, wherein the electrochemical reaction generated on the surface of the cathode is 2H++2e-→H2The chemical reaction on the surface of the anode is as follows: 4OH-+4e-→2H2O+O2；2Al+3[O]→Al2O3+1675.7KJ，5Al+3Y+12[O]+1675.7KJ→Y3Al5O12。
The principle by which yttrium aluminum oxide compounds can be formed by electrochemical reaction includes: due to Al and [ O ]]When a chemical reaction occurs, heat is released, and the electrolyte contains yttrium to form Al2O3Can further react with yttrium to generate yttrium aluminum oxide.
In this embodiment, the PH range of the electrolyte is: 3 to 6.8; the mass fraction of the yttrium source in the electrolyte is as follows: 10 wt% -50 wt%. The significance of selecting the mass fraction of the yttrium source in the electrolyte is as follows: if the mass fraction of the yttrium source in the electrolyte is less than 10 wt%, so that the formed yttrium aluminum oxide compound is less, the protection capability of the corrosion-resistant coating on the part body is weaker; the mass fraction of the yttrium source in the electrolyte is more than 50 wt%, yttrium oxide is mixed in the process of generating yttrium aluminum oxide when the yttrium source is excessive, and as the yttrium aluminum oxide and yttrium oxide have different crystal structures and cannot form a solid solution, the corrosion-resistant coating is easy to cause overlarge stress and even cracking in the deposition process, the protection capability of the corrosion-resistant coating on the part body 20 is insufficient, and plasma in the plasma treatment process is easy to enter the corrosion part body through the cracks of the corrosion-resistant coating, so that the part body is corroded.
The yttrium aluminum oxide compound generated by the electrochemical reaction is in a weak crystalline or amorphous state and contains nano-scale micropores, so that the corrosion resistance of the yttrium aluminum oxide compound to plasma is not enough, and in order to improve the corrosion resistance, the yttrium aluminum oxide compound coating is subjected to hole sealing treatment to form a crystalline yttrium aluminum oxide compound coating.
Referring to fig. 5, the yttrium aluminum oxide coating 21 is subjected to a sealing treatment to form a crystallized yttrium aluminum oxide coating 22.
In this embodiment, the hole sealing treatment is a high-temperature steam hole sealing process; the high-temperature steam hole sealing process comprises high-temperature steam. The technological parameters of the high-temperature steam hole sealing process comprise: the set hole sealing temperature range is 120-200 ℃, and the steam flow rate is 10-50 standard ml/min.
The high-temperature steam hole sealing principle comprises the following steps: under high temperature conditions, yttrium oxide undergoes a hydration reaction with water, which causes the volume of aluminum oxide to expand, and the thermal effect of this expansion is further related to Y2O3The reaction occurs to form a dense yttrium aluminum oxide compound.
The yttrium aluminum oxide coating 21 is subjected to hole sealing treatment to form a crystallized yttrium aluminum oxide coating 22, and the performance of the crystallized yttrium aluminum oxide coating 22 is relatively stable and has relatively strong corrosion resistance to plasma, so that the yttrium aluminum oxide coating 22 can resist the corrosion of the component body 20 against plasma.
Fig. 6 is another schematic structural view of the corrosion-resistant coating formed on the surface of the component body according to the present invention.
Referring to fig. 6, the yttrium aluminum oxide coating 31 is subjected to a pore sealing treatment to form a crystallized yttrium aluminum oxide coating 32.
Before the hole sealing treatment, the component body 30 is placed in an electrolytic bath for electrochemical reaction, the electrolyte in the electrolytic bath comprises hydrogen ions and yttrium ions, and the corrosion-resistant coating 31 is formed on the surface of the component body 30, wherein the corrosion-resistant coating 31 comprises an yttrium aluminum oxide coating.
In this embodiment, the hole sealing treatment is an atomic layer deposition hole sealing process; the atomic layer deposition hole sealing process comprises the following steps: water vapor and a yttrium-based metal organic source; the yttrium-based metal-organic source comprises: YK (YK)1K2K3Of yttrium species of (a), wherein K1、K2And K3Independently selected from: at least one of a halide, a carbonyl, a cyclopentadiene, an acetamide, an acetic acid, an amidine salt (amidinate), or a diazadiene (diazadiene). The technological parameters of the atomic layer deposition hole sealing process comprise: the hole sealing temperature ranges from 120 ℃ to 250 ℃, and the ratio of the flow rate of the water vapor to the flow rate of the yttrium-based metal organic source is 1: 0.5-1: 8.
In this example, the ratio of the flow rate of the water vapor to the flow rate of the yttrium-based metal organic source was chosen in the sense that: if the ratio of the flow rate of the water vapor to the flow rate of the yttrium-based metal organic source is less than 1:0.5, yttrium-oxy-aluminum compounds will be difficult to form; if the ratio of the flow rate of the water vapor to the flow rate of the yttrium-based metal organic source is greater than 1:8, the decomposition of the yttrium-based metal organic source is incomplete and carbon deposition is likely to result.
The principle of the atomic layer deposition hole sealing comprises the following steps: under the condition of high temperature, yttrium oxide and water generate hydration reaction, the volume of alumina is expanded through the hydration reaction of high temperature, yttrium-based metal organic source is hydrolyzed to form yttrium oxide in the process, and meanwhile, yttrium oxide and alumina generate further reaction to generate a crystallized yttrium-aluminum oxide compound.
The crystallized yttrium aluminum oxide coating 22 is relatively stable and resistant to plasma erosion, and thus, the yttrium aluminum oxide coating 22 is resistant to plasma erosion of the component body 20.
Accordingly, the present invention also provides a semiconductor component formed by the above method, referring to fig. 6, the semiconductor component includes: a component body 30; and the corrosion-resistant coating 32 is positioned on the surface of the part body 30, and the corrosion-resistant coating 32 comprises an yttrium aluminum oxide compound coating.
In the semiconductor component formed by the above method, the corrosion-resistant coating 32 includes a (420) crystal plane and (211), (321), (422), (521), (532) crystal planes. In one embodiment, the ratio of the (420) crystal plane to other crystal planes is in a range from 1:0.01 to 1:0.1, referring to fig. 7, fig. 7 is an X-ray diffraction pattern of the yttrium aluminum oxide formed by the method of the present invention and other methods, in fig. 7, 1 represents an X-ray diffraction pattern of the yttrium aluminum oxide corrosion-resistant coating formed by the method of the present invention, and 2 represents an X-ray diffraction pattern of the yttrium aluminum oxide corrosion-resistant coating formed by other methods, and the other methods include: an atomic layer deposition process (ALD), a chemical vapor deposition process (CVD) or a metal organic chemical vapor deposition process (MOCVD), and as can be seen from the figure, the (420) crystal face of the yttrium aluminum oxide corrosion-resistant coating 32 formed by the method of the present invention occupies a main part,
the advantage of the corrosion-resistant coating 32 with more (420) crystal planes is that: the crystal face is a close-packed face of yttrium aluminum oxide, has the highest chemical stability and is relatively resistant to chemical corrosion. Based on the (420) crystal face, the grain boundary between yttrium aluminum oxide corrosion-resistant coatings can be effectively reduced, and then the surface has fewer particles generated by chemical corrosion.
Although the present invention is disclosed above, the present invention is not limited thereto. Without departure by any person skilled in the art. Various changes and modifications can be made within the spirit and scope of the invention, and the scope of the invention should be determined by the appended claims.
Claims (19)
1. A method of forming a corrosion-resistant coating on a surface of a component body, comprising:
providing a component body;
placing the part body in an electrolytic tank for electrochemical reaction, wherein electrolyte in the electrolytic tank comprises hydrogen ions and yttrium ions, and forming a corrosion-resistant coating on the surface of the part body, wherein the corrosion-resistant coating comprises an yttrium aluminum oxide compound coating;
and carrying out hole sealing treatment on the yttrium aluminum oxide compound coating to form a crystallized yttrium aluminum oxide compound coating.
2. The method of forming a corrosion-resistant coating on a surface of a component body according to claim 1, wherein the electrolyte solution includes: acid solution and yttrium source solution.
3. The method of forming a corrosion-resistant coating on a surface of a component body of claim 2, wherein the acid solution comprises: at least one of oxalic acid, phosphoric acid or sulfuric acid; the yttrium source solution comprises: at least one of nitroyttrium, yttrium sulfate, or yttrium chloride.
4. The method for forming a corrosion-resistant coating on a surface of a component body according to claim 2, wherein a cathode and an anode are included in the electrolytic bath; the cathode is platinum and the anode is aluminum; the electrochemical reaction generated on the surface of the cathode is 2H++2e-→H2The chemical reaction on the surface of the anode is as follows: 4OH-+4e-→2H2O+O2；2Al+3[O]→Al2O3+1675.7KJ，5Al+3Y+12[O]+1675.7KJ→Y3Al5O12。
5. The method for forming a corrosion-resistant coating on a surface of a component body according to claim 2, wherein the electrolyte has a PH value in a range of: 3 to 6.8; the mass fraction of the yttrium source in the electrolyte is as follows: 10 wt% -50 wt%.
6. The method for forming a corrosion-resistant coating on a surface of a component body according to claim 1, wherein the corrosion-resistant coating formed by the electrochemical reaction is in a weakly crystalline or amorphous state and contains nano-scale micro-pores.
7. The method for forming a corrosion-resistant coating on a surface of a component body according to claim 1, wherein the sealing treatment is a high-temperature steam sealing process; the high-temperature steam hole sealing process comprises high-temperature steam.
8. The method for forming the corrosion-resistant coating on the surface of the component body according to claim 7, wherein the process parameters of the high-temperature steam sealing process include: the set hole sealing temperature range is 120-200 ℃, and the steam flow rate is 10-50 standard ml/min.
9. The method for forming a corrosion-resistant coating on a surface of a component body according to claim 1, wherein the sealing treatment is an atomic layer deposition sealing process; the atomic layer deposition hole sealing process comprises the following steps: water vapor and a yttrium-based metal organic source; the yttrium-based metal-organic source comprises: yttrium species of YK1K2K3, K1, K2 and K3 are: at least one of a halide, a carbonyl, a cyclopentadiene, an acetamide, acetic acid, an amidine salt, or a diazadiene.
10. The method for forming the corrosion-resistant coating on the surface of the component body according to claim 9, wherein the process parameters of the atomic layer deposition sealing process include: the hole sealing temperature ranges from 120 ℃ to 250 ℃, and the ratio of the flow rate of the water vapor to the flow rate of the yttrium-based metal organic source is 1: 0.5-1: 8.
11. The method of forming a corrosion-resistant coating on a surface of a component body according to claim 1, wherein the thickness of the corrosion-resistant coating is: 10 to 500 microns.
12. A semiconductor component, comprising:
a component body;
a corrosion resistant coating formed by the method of any one of claims 1 to 11 on a surface of the component body, the corrosion resistant coating comprising an yttrium aluminum oxide coating.
13. The semiconductor component according to claim 12, wherein the corrosion-resistant coating comprises a (420) crystal plane and a (211), (321), (422), (521), (532) crystal plane.
14. The semiconductor component of claim 13, wherein the ratio of the (420) crystal plane to the other crystal planes is in the range of: 1: 0.01-1: 0.1.
15. A plasma processing apparatus, comprising:
a reaction chamber for forming a plasma environment therein;
the semiconductor component as claimed in any one of claims 12 to 14, located in the reaction chamber and exposed to the plasma environment.
16. The plasma processing apparatus of claim 15, wherein the plasma environment comprises at least one of fluorine, chlorine, oxygen, or hydrogen plasma.
17. The plasma processing apparatus according to claim 15, wherein the plasma processing apparatus is a plasma etching apparatus or a plasma cleaning apparatus.
18. The plasma processing apparatus as claimed in claim 17, wherein when the plasma processing apparatus is an inductively coupled plasma processing apparatus, the parts comprise: at least one of a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly, a cover ring, a focus ring, an insulating ring, or a plasma confinement device.
19. The plasma processing apparatus as claimed in claim 17, wherein when the plasma processing apparatus is a capacitively-coupled plasma processing apparatus, the parts comprise: at least one of a shower head, an upper ground ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic chuck assembly, a lower ground ring, a cover ring, a focus ring, an insulating ring, or a plasma confinement device.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005029891A (en) * | 2003-06-17 | 2005-02-03 | Chugoku Denka Kogyo Kk | Surface-treated aluminum material and manufacturing method thereof |
| JP2016194098A (en) * | 2015-03-31 | 2016-11-17 | 地方独立行政法人山口県産業技術センター | Surface-treated aluminum material and method for producing the same |
| CN108779568A (en) * | 2016-03-11 | 2018-11-09 | 应用材料公司 | Method for electrochemically growing diyttrium trioxide or yttrium oxide on semiconductor processing equipment |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005029891A (en) * | 2003-06-17 | 2005-02-03 | Chugoku Denka Kogyo Kk | Surface-treated aluminum material and manufacturing method thereof |
| JP2016194098A (en) * | 2015-03-31 | 2016-11-17 | 地方独立行政法人山口県産業技術センター | Surface-treated aluminum material and method for producing the same |
| CN108779568A (en) * | 2016-03-11 | 2018-11-09 | 应用材料公司 | Method for electrochemically growing diyttrium trioxide or yttrium oxide on semiconductor processing equipment |
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