CN114573246A - Double-sided laser-etchable conductive glass and preparation method thereof - Google Patents

Abstract

The invention provides a preparation method of double-sided laser-etchable conductive glass, comprising the following steps: using an electron gun to evaporate a film material of an impact-resistant strengthening film layer, and depositing the film material on the outer surface of a glass substrate to form an impact-resistant strengthening film layer ; Use electron gun to evaporate the film material that blocks the laser film layer and then deposit it on the impact-resistant strengthening film layer on the front and back of the glass substrate to form a laser barrier film layer; sputter indium tin oxide is deposited on the front and back of the glass substrate. The surface of the laser barrier layer , to form an indium tin oxide conductive film; to obtain a double-sided laser-etchable conductive glass. The invention also provides a double-sided laser-etchable conductive glass, and the double-sided laser-etchable conductive glass obtained by the above preparation method. Double-sided laser-etched conductive glass can form glass with anti-laser penetration, and then sputtered conductive films on both sides of the conductive glass to generate double-sided conductive glass with anti-laser penetration. Simplify the process to improve production efficiency and expand the scope of application of products.

Description

Double-sided laser-etchable conductive glass and preparation method

technical field

The invention relates to the field of conductive glass manufacturing, in particular to a double-sided laser-etchable conductive glass.

The invention relates to a preparation method of double-sided laser-etchable conductive glass.

Background technique

Double-sided conductive glass is widely used as a glass raw material in the touch display electronics industry. The conductive layers on the front and back of the material need to be processed to form different independent circuits. The main purpose is to make the independent circuits on both sides interact to generate vertical capacitance. In electronic accessories, the circuit accuracy requirements on the front and back are very high. Lasers are usually used for circuit etching. When ordinary double-sided conductive glass is laser-etched on the front, the light beam will penetrate the glass medium after etching the front conductive layer and penetrate to the reverse side, destroying the reverse side. In the same way, when the conductive layer is laser etched on the reverse side, the front conductive layer will be damaged, so that the current double-sided conductive glass cannot be applied to the double-sided laser etching process.

SUMMARY OF THE INVENTION

The technical problem to be solved by the present invention is to provide a double-sided laser-etchable conductive glass with reasonable structure and satisfying more technological requirements.

The technical problem to be solved by the present invention is to provide a preparation method of double-sided laser-etchable conductive glass.

In order to solve the above-mentioned technical problems, the present invention provides a preparation method of double-sided laser-etchable conductive glass, comprising the following steps:

a) Put the glass substrate in the vacuum chamber of the electron beam evaporation machine, the vacuum degree in the vacuum chamber is less than 2.0×10-3Pa, start the ion source to clean the glass substrate, and dry it;

b) Coating an impact-resistant reinforced film on the surface of the glass substrate by an evaporation process;

Putting the glass substrate obtained in step a) into a vacuum chamber, the vacuum chamber satisfies the conditions of vacuum degree <2.0×10-3Pa, temperature 500-700°C, and the film material of the impact-resistant strengthening film layer is evaporated by using an electron gun, Under the action of the ion source, the film material is deposited on the outer surface of the glass substrate in the form of nano-scale molecules, and an impact-strengthened film is formed on the front and back sides of the glass substrate respectively. The thickness of the impact-strengthened film is 300-400nm ;

c) Re-coat the laser barrier film layer on the outside of the impact-resistant strengthening film layer by vapor deposition process;

The glass substrate obtained in step b) is placed in a vacuum chamber, and the vacuum chamber satisfies the conditions of vacuum degree <2.0×10-3Pa and temperature of 700-900°C, and after the film material that blocks the laser film layer is evaporated by an electron gun, Under the action of the ion source, the nano-scale molecules are deposited on the impact-strengthened film layers on the front and back sides of the glass substrate respectively to form a laser barrier film layer. The laser belongs to light with a wavelength of <500nm; 200-400nm;

d) Coating an indium tin oxide conductive film on the surface of the laser barrier film by a magnetron sputtering process;

The glass substrate obtained in step c) is placed in a vacuum chamber, the vacuum degree in the vacuum chamber is less than 8.0×10-3Pa, the temperature is 350-420°C, and indium tin oxide is deposited on the front and back sides of the glass substrate by sputtering laser On the surface of the barrier layer, the thickness of the coating is 220-280nm, forming an indium tin oxide conductive film;

e) Obtaining double-sided laser-etchable conductive glass.

As a preference of the method for preparing double-sided laser-etchable conductive glass, in the step a), before the glass substrate is placed in the vacuum chamber of the electron beam evaporation machine, the glass is cleaned and dried.

As a preference of the method for preparing double-sided laser-etchable conductive glass, in step b), the film material of the impact-resistant strengthening film layer includes the following combined mixtures and weight percentages: silicon oxide 30%-70%, zirconium oxide 30% -70%.

As a preference of the method for preparing double-sided laser-etchable conductive glass, in the step c), the film material of the laser barrier film layer includes a mixture and mass percentage of the following compositions: tin oxide 20%-40%, rubidium 20%- 40%, platinum 20%-40%.

After adopting this method, a layer of laser blocking material is evaporated on the front and back sides of the glass as the base material to form a glass with anti-laser penetration, and then conductive films are sputtered on the front and back sides to form a glass with anti-laser penetration of double-sided conductive glass.

In order to solve the above technical problems, the present invention also provides a double-sided laser-etchable conductive glass, which is obtained by using the above-mentioned preparation method of the double-sided laser-etchable conductive glass.

After adopting this structure, when the double-sided laser-etched conductive glass is laser-etched on the front side, there is an anti-laser barrier film under the conductive layer on the front side, and the laser cannot penetrate the glass medium and destroy the conductive medium on the back side; When laser etching the circuit, it will not destroy the conductive medium on the front side.

The electrical layer etching circuit process of double-sided laser etching conductive glass can be changed to laser etching, which can not only simplify the production process and improve the production efficiency, but also improve the accuracy of the product circuit requirements and expand the application scope of the product.

Description of drawings

FIG. 1 is a structural cross-sectional view of Embodiment 1 of the double-sided laser-etchable conductive glass.

Detailed ways

Example 1

The preparation method of double-sided laser-etchable conductive glass includes the following steps:

a) Before the glass substrate 1 is placed in the vacuum chamber of the electron beam evaporation machine, the glass is cleaned and dried, and the glass substrate 1 is placed in the vacuum chamber of the electron beam evaporation machine, and the degree of vacuum in the vacuum chamber is less than 2.0×10 -3Pa, start the ion source to clean the glass substrate 1 again, and dry it.

b) Coating an impact-resistant strengthening film layer 11 on the surface of the glass substrate 1 by an evaporation process;

The glass substrate 1 obtained in step a) is put into a vacuum chamber, and the vacuum chamber satisfies the conditions of vacuum degree <2.0×10-3Pa and temperature of 500°C, and the film material of the impact-resistant strengthening film layer 11 is evaporated by using an electron gun, Under the action of the ion source, the film material is deposited on the outer surface of the dried glass substrate 1 in the form of nano-scale molecules, and an impact-strengthened film layer 11 is formed on the front and back sides of the glass substrate 1 respectively. The thickness of 300nm;

The film material of the impact-strengthened film layer 11 includes the following combined mixture and weight percentage: 30% of silicon oxide and 70% of zirconium oxide.

c) Re-coating the laser barrier film layer 12 on the outside of the impact-resistant strengthening film layer 11 by using an evaporation process;

The glass substrate 1 obtained in step b) is placed in a vacuum chamber, and the vacuum chamber satisfies the conditions of vacuum degree <2.0×10-3Pa and temperature of 700°C. Under the action of the ion source, the nano-scale molecules are deposited on the impact-strengthened film layers 11 on the front and back sides of the glass substrate 1 respectively to form an anti-laser film barrier layer, and the laser belongs to light with a wavelength of <500nm; The thickness of 200nm;

In the step c), the film material of the laser blocking film layer 12 includes a mixture and mass percentage of the following composition: 20% of tin oxide, 40% of rubidium, and 40% of platinum.

d) using the magnetron sputtering process to coat the indium tin oxide conductive film 13 on the surface of the laser barrier film layer 12;

The glass substrate 1 obtained in step c) is placed in a vacuum chamber, the vacuum degree in the vacuum chamber is less than 8.0 × 10-3Pa, the temperature is 350°C, and the indium tin oxide is deposited on the front and back sides of the glass substrate 1 by sputtering laser On the surface of the barrier layer, the thickness of the plating layer is 220 nm, and an indium tin oxide conductive film 13 is formed.

e) Obtaining double-sided laser-etchable conductive glass.

As shown in FIG. 1 , the double-sided laser-etchable conductive glass obtained by the above-mentioned preparation method of the double-sided laser-etchable conductive glass.

The double-sided laser-etchable conductive glass includes a glass substrate 1 , two layers of impact-strengthened film layers 11 , two layers of laser blocking film layers 12 and two layers of indium tin oxide conductive films 13 .

The two-layer impact-strengthened film layer 11 , the two-layer laser blocking film layer 12 and the two-layer indium tin oxide conductive film 13 are distributed in sequence from the direction close to the glass substrate 1 to the direction away from the glass substrate 1 .

This double-sided laser-etched conductive glass uses glass as the base material, evaporates a layer of laser blocking material on the front and back sides of the conductive glass to form glass with anti-laser penetration, and then sputters conductive films on the front and back sides to form anti-laser glass. Laser-penetrated double-sided conductive glass, when the conductive glass is laser etched on the front side, there is an anti-laser barrier film under the conductive layer on the front side, and the laser cannot penetrate the glass medium and destroy the conductive medium on the back side of the glass; similarly, the laser on the back side of the glass When etching the circuit, the conductive medium on the front side of the glass will not be damaged.

Embodiment 2

The preparation method of double-sided laser-etchable conductive glass includes the following steps:

a) Before the glass substrate is placed in the vacuum chamber of the electron beam evaporation machine, the glass is cleaned and dried, and the glass substrate is placed in the vacuum chamber of the electron beam evaporation machine. The degree of vacuum in the vacuum chamber is less than 2.0×10-3Pa , start the ion source to clean the glass substrate again, and dry it.

b) Coating an impact-resistant reinforced film on the surface of the glass substrate by an evaporation process;

Put the glass substrate obtained in step a) into a vacuum chamber, the vacuum chamber satisfies the conditions of vacuum degree < 2.0 × 10-3Pa and temperature of 700°C, and the film material of the impact-resistant strengthening film layer is evaporated by using an electron gun. Under the action of the source, the film material is deposited on the outer surface of the dried glass substrate in the form of nano-scale molecules, and an impact-strengthened film layer is formed on the front and back sides of the glass substrate respectively, and the thickness of the impact-strengthened film layer is 400nm;

The film material of the impact-strengthened film layer includes the following combined mixture and weight percentage: 70% of silicon oxide and 30% of zirconium oxide.

c) Re-coat the laser barrier film layer on the outside of the impact-resistant strengthening film layer by vapor deposition process;

The glass substrate obtained in step b) is placed in a vacuum chamber, and the vacuum chamber satisfies the conditions of vacuum degree <2.0×10-3Pa and temperature of 900°C. Under the action of the source, the nanometer-scale molecules are deposited on the impact-resistant strengthening film layers on the front and back sides of the glass substrate respectively to form a laser barrier film layer, and the laser belongs to light with a wavelength of <500nm;

In the step c), the film material of the laser blocking film layer includes a mixture and mass percentage of the following composition: 40% of tin oxide, 20% of rubidium, and 40% of platinum.

d) Coating an indium tin oxide conductive film on the surface of the laser barrier film by a magnetron sputtering process;

The glass substrate obtained in step c) is placed in a vacuum chamber, the vacuum degree in the vacuum chamber is less than 8.0×10-3Pa, the temperature is 420°C, and the laser blocking layers deposited on the front and back sides of the glass substrate by sputtering indium tin oxide On the surface, the thickness of the plating layer is 280nm, and an indium tin oxide conductive film is formed.

e) Obtaining double-sided laser-etchable conductive glass.

The double-sided laser-etchable conductive glass obtained by the above-mentioned preparation method of the double-sided laser-etchable conductive glass.

The double-sided laser-etchable conductive glass includes a glass substrate, two layers of impact-strengthened film layers, two layers of laser blocking films and two layers of indium tin oxide conductive films.

The two-layer impact-strengthened film layer, the two-layer laser blocking film layer and the two-layer indium tin oxide conductive film are distributed in sequence from the direction close to the glass substrate to the direction away from the glass substrate.

This double-sided laser-etched conductive glass uses glass as the base material, evaporates a layer of laser blocking material on the front and back sides of the conductive glass to form glass with anti-laser penetration, and then sputters conductive films on the front and back sides to form anti-laser glass. Laser-penetrated double-sided conductive glass, when the conductive glass is laser etched on the front side, there is an anti-laser barrier film under the conductive layer on the front side, and the laser cannot penetrate the glass medium and destroy the conductive medium on the back side of the glass; similarly, the laser on the back side of the glass When etching the circuit, the conductive medium on the front side of the glass will not be damaged.

Embodiment 3

The preparation method of double-sided laser-etchable conductive glass includes the following steps:

a) Before the glass substrate is placed in the vacuum chamber of the electron beam evaporation machine, the glass is cleaned and dried, and the glass substrate is placed in the vacuum chamber of the electron beam evaporation machine. The degree of vacuum in the vacuum chamber is less than 2.0×10-3Pa , start the ion source to clean the glass substrate again, and dry it.

b) Coating an impact-resistant reinforced film on the surface of the glass substrate by an evaporation process;

The glass substrate obtained in step a) is put into a vacuum chamber, and the vacuum chamber satisfies the conditions of vacuum degree <2.0×10-3Pa and temperature of 600°C, and the film material of the impact-resistant strengthening film layer is evaporated by using an electron gun, and the film material of the impact-resistant strengthening film is evaporated in the ion chamber. Under the action of the source, the film material is deposited in the form of nano-scale molecules on the outer surface of the dry glass substrate, and an impact-strengthened film layer is formed on the front and back sides of the glass substrate respectively, and the thickness of the impact-strengthened film layer is 350nm;

The film material of the impact-resistant strengthening film layer includes the following combined mixture and weight percentage: 50% of silicon oxide, 50% of zirconium oxide.

c) Re-coat the laser barrier film layer on the outside of the impact-resistant strengthening film layer by vapor deposition process;

The glass substrate obtained in step b) is placed in a vacuum chamber, and the vacuum chamber satisfies the conditions of vacuum degree <2.0×10-3Pa and temperature of 800°C. Under the action of the source, the nano-scale molecules are deposited on the impact-resistant reinforced film layers on the front and back sides of the glass substrate respectively to form a laser barrier film layer. The laser belongs to light with a wavelength of <500nm; 400nm;

In the step c), the film material of the laser blocking film layer includes a mixture and mass percentage of the following composition: 40% of tin oxide, 40% of rubidium, and 20% of platinum.

d) Coating an indium tin oxide conductive film on the surface of the laser barrier film by a magnetron sputtering process;

The glass substrate obtained in step c) is placed in a vacuum chamber, the vacuum degree in the vacuum chamber is less than 8.0×10-3Pa, the temperature is 400°C, and the laser blocking layer deposited on the front and back sides of the glass substrate by sputtering indium tin oxide On the surface, the thickness of the plating layer is 250nm, and a conductive film of indium tin oxide is formed.

e) Obtaining double-sided laser-etchable conductive glass.

The double-sided laser-etchable conductive glass obtained by the above-mentioned preparation method of the double-sided laser-etchable conductive glass.

The double-sided laser-etchable conductive glass includes a glass substrate, two layers of impact-strengthened film layers, two layers of laser blocking films and two layers of indium tin oxide conductive films.

The two-layer impact-strengthened film layer, the two-layer laser blocking film layer and the two-layer indium tin oxide conductive film are distributed in sequence from the direction close to the glass substrate to the direction away from the glass substrate.

This double-sided laser-etched conductive glass uses glass as the base material, evaporates a layer of laser blocking material on the front and back sides of the conductive glass to form glass with anti-laser penetration, and then sputters conductive films on the front and back sides to form anti-laser glass. Laser-penetrated double-sided conductive glass, when the conductive glass is laser etched on the front side, there is an anti-laser barrier film under the conductive layer on the front side, and the laser cannot penetrate the glass medium and destroy the conductive medium on the back side of the glass; similarly, the laser on the back side of the glass When etching the circuit, the conductive medium on the front side of the glass will not be damaged.

Embodiment 4

The preparation method of double-sided laser-etchable conductive glass includes the following steps:

a) Before the glass substrate is placed in the vacuum chamber of the electron beam evaporation machine, the glass is cleaned and dried, and the glass substrate is placed in the vacuum chamber of the electron beam evaporation machine. The degree of vacuum in the vacuum chamber is less than 2.0×10-3Pa , start the ion source to clean the glass substrate again, and dry it.

b) Coating an impact-resistant reinforced film on the surface of the glass substrate by an evaporation process;

The glass substrate obtained in step a) is put into a vacuum chamber, and the vacuum chamber satisfies the conditions of vacuum degree <2.0×10-3Pa and temperature of 600°C, and the film material of the impact-resistant strengthening film layer is evaporated by using an electron gun, and the film material of the impact-resistant strengthening film is evaporated in the ion chamber. Under the action of the source, the film material is deposited on the outer surface of the dried glass substrate in the form of nano-scale molecules, and an impact-strengthened film layer is formed on the front and back sides of the glass substrate respectively, and the thickness of the impact-strengthened film layer is 400nm;

The film material of the impact-resistant strengthening film layer includes the following combined mixture and weight percentage: 40% of silicon oxide, 60% of zirconium oxide.

c) Re-coat the laser barrier film layer on the outside of the impact-resistant strengthening film layer by vapor deposition process;

The glass substrate obtained in step b) is placed in a vacuum chamber, and the vacuum chamber satisfies the conditions of vacuum degree <2.0×10-3Pa and temperature of 800°C. Under the action of the source, the nanometer-scale molecules are deposited on the impact-resistant reinforced film layers on the front and back sides of the glass substrate respectively to form a laser barrier film layer. The laser belongs to light with a wavelength of <500nm;

In the step c), the film material of the laser blocking film layer includes a mixture and mass percentage of the following composition: 35% of tin oxide, 35% of rubidium, and 30% of platinum.

d) Coating an indium tin oxide conductive film on the surface of the laser barrier film by a magnetron sputtering process;

The glass substrate obtained in step c) is placed in a vacuum chamber, the vacuum degree in the vacuum chamber is less than 8.0×10-3Pa, the temperature is 390°C, and the laser blocking layer deposited on the front and back sides of the glass substrate by sputtering indium tin oxide On the surface, the thickness of the plating layer is 240nm, and a conductive film of indium tin oxide is formed.

e) Obtaining double-sided laser-etchable conductive glass.

The double-sided laser-etchable conductive glass obtained by the above-mentioned preparation method of the double-sided laser-etchable conductive glass.

The double-sided laser-etchable conductive glass includes a glass substrate, two layers of impact-strengthened film layers, two layers of laser blocking films and two layers of indium tin oxide conductive films.

The two-layer impact-strengthened film layer, the two-layer laser blocking film layer and the two-layer indium tin oxide conductive film are distributed in sequence from the direction close to the glass substrate to the direction away from the glass substrate.

This double-sided laser-etched conductive glass uses glass as the base material, evaporates a layer of laser blocking material on the front and back sides of the conductive glass to form glass with anti-laser penetration, and then sputters conductive films on the front and back sides to form anti-laser glass. Laser-penetrated double-sided conductive glass, when the conductive glass is laser etched on the front side, there is an anti-laser barrier film under the conductive layer on the front side, and the laser cannot penetrate the glass medium and destroy the conductive medium on the back side of the glass; similarly, the laser on the back side of the glass When etching the circuit, the conductive medium on the front side of the glass will not be damaged.

The above are only four embodiments of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, several modifications and improvements can also be made, and these should also be regarded as It belongs to the protection scope of the present invention.

Claims (5)

1. a preparation method of double-sided laser etching conductive glass, comprising the following steps: a) Put the glass substrate in the vacuum chamber of the electron beam evaporation machine, the vacuum degree in the vacuum chamber is less than 2.0×10 ^-3 Pa, start the ion source to clean the glass substrate, and dry it; b) Coating an impact-resistant reinforced film on the surface of the glass substrate by an evaporation process; Put the glass substrate obtained in step a) into a vacuum chamber, the vacuum chamber satisfies the conditions of vacuum degree <2.0×10 ^-3 Pa and temperature 500-700°C, and the film material of the impact-resistant strengthening film layer is evaporated by using an electron gun , under the action of the ion source, the film material is deposited on the outer surface of the glass substrate in the form of nano-scale molecules, and an impact-strengthened film is formed on the front and back sides of the glass substrate respectively, and the thickness of the impact-strengthened film is 300- 400nm; c) Re-coat the laser barrier film layer on the outside of the impact-resistant strengthening film layer by vapor deposition process; The glass substrate obtained in step b) is placed in a vacuum chamber, and the vacuum chamber satisfies the conditions of vacuum degree <2.0×10 ^-3 Pa and temperature of 700-900°C, and the film material that blocks the laser film layer is evaporated by using an electron gun. , under the action of the ion source, the nano-scale molecules are deposited on the impact-resistant strengthening film layer on the front and back sides of the glass substrate respectively to form a laser barrier film layer, and the laser belongs to light with a wavelength of <500nm; the thickness of the laser barrier film layer is 200-400nm; d) Coating an indium tin oxide conductive film on the surface of the laser barrier film by a magnetron sputtering process; The glass substrate obtained in step c) is placed in a vacuum chamber, the vacuum degree in the vacuum chamber is less than 8.0 × 10 ^-3 Pa, the temperature is 350-420 ° C, and indium tin oxide is sputtered and deposited on the front and back sides of the glass substrate. On the surface of the laser blocking layer, the coating thickness is 220-280nm, forming an indium tin oxide conductive film; e) Obtaining double-sided laser-etchable conductive glass. 2. the preparation method of double-sided laser etching conductive glass according to claim 1, is characterized in that: In the step a), before the glass substrate is placed in the vacuum chamber of the electron beam evaporation machine, the glass is cleaned and dried. 3. the preparation method of double-sided laser etching conductive glass according to claim 1, is characterized in that: In the step b), the film material of the impact-strengthened film layer includes the following combined mixture and weight percentage: 30%-70% of silicon oxide and 30%-70% of zirconium oxide. 4. the preparation method of double-sided laser etching conductive glass according to claim 1, is characterized in that: In the step c), the film material of the laser blocking film layer includes a mixture and mass percentage of the following composition: 20%-40% of tin oxide, 20%-40% of rubidium, and 20%-40% of platinum. 5. A double-sided laser-etchable conductive glass, characterized in that: a double-sided laser-etchable conductive glass obtained by the method for preparing a double-sided laser-etchable conductive glass according to any one of claims 1 to 4.

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