CN114520211B - LED display panel and manufacturing method thereof, and LED display device - Google Patents
LED display panel and manufacturing method thereof, and LED display device Download PDFInfo
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Abstract
本发明提供了LED显示面板及其制作方法和LED显示装置。该LED显示面板包括：衬底基板；导电层设置在衬底基板的一侧；第一绝缘层设置在底基板的一侧，且覆盖导电层；第一栅极设置在第一绝缘层远离衬底基板的一侧；第二绝缘层设置在第一绝缘层远离衬底基板的一侧，且覆盖第一栅极；有源层设置在第二绝缘层远离衬底基板的一侧；第三绝缘层设置在第二绝缘层远离衬底基板的一侧，且覆盖有源层，其中，所述第一栅极用于屏蔽所述导电层产生的干扰电场。可以有效屏蔽导电层产生的干扰电场，保证LED显示面板亮度显示均匀；该LED显示面板可以实现无边框设计。
The present invention provides an LED display panel, a manufacturing method thereof, and an LED display device. The LED display panel includes: a substrate; a conductive layer is arranged on one side of the substrate; a first insulating layer is arranged on one side of the bottom substrate and covers the conductive layer; a first gate is arranged on the side of the first insulating layer away from the substrate; a second insulating layer is arranged on the side of the first insulating layer away from the substrate and covers the first gate; an active layer is arranged on the side of the second insulating layer away from the substrate; a third insulating layer is arranged on the side of the second insulating layer away from the substrate and covers the active layer, wherein the first gate is used to shield the interference electric field generated by the conductive layer. The interference electric field generated by the conductive layer can be effectively shielded to ensure that the brightness of the LED display panel is displayed uniformly; the LED display panel can achieve a borderless design.
Description
Technical Field
The invention relates to the technical field of display, in particular to an LED display panel, a preparation method thereof and an LED display device.
Background
Micro-LEDs refer to technology which is used for transferring a large amount of addressing after the traditional LEDs are arrayed and miniaturized to a circuit substrate to form ultra-small-space LEDs, and further shrinking the length of the millimeter-level LEDs to the micrometer level so as to achieve ultra-high pixels and ultra-high resolution, and can be theoretically adapted to screens with various sizes.
Due to the LTPS technology and the transfer printing technology, the LED large-size display panel is formed by splicing small screens. The periphery of the display panel such as GOA signal lines, VDD, VSS and the like needs to occupy the panel frame, so that a large gap is formed between the spliced screens, and the appearance is influenced. Therefore, the development of a borderless spliced panel is urgent. The existing borderless wiring scheme comprises a side wiring scheme and a back wiring scheme, and in the back wiring scheme, fanout inevitably passes through an LED pixel circuit, so that an electric signal of the Fanout can influence the pixel circuit TFT to enable the pixel circuit TFT to be in uncontrolled positive bias or negative bias, and uneven display brightness is caused.
Accordingly, research on LED display panels is in progress.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems in the related art to some extent. Therefore, an objective of the present invention is to provide an LED display panel, which can realize a borderless design, or can shield an interference electric field generated by a conductive layer, so as to ensure uniform display brightness of the LED display panel.
In one aspect of the invention, an LED display panel is provided. The LED display panel comprises a substrate base plate, a conducting layer, a first insulating layer, a first grid electrode, a second insulating layer and an active layer, wherein the conducting layer is arranged on one side of the substrate base plate, the first insulating layer is arranged on one side of the substrate base plate and covers the conducting layer, the first grid electrode is arranged on one side, far away from the substrate base plate, of the first insulating layer, the second insulating layer is arranged on one side, far away from the substrate base plate, of the first insulating layer and covers the first grid electrode, and the active layer is arranged on one side, far away from the substrate base plate, of the second insulating layer and is used for shielding an interference electric field generated by the conducting layer. Therefore, under the condition of not adding extra capacitance and wiring, the electric field generated by the first grid electrode in the structure of the TFT in the LED display panel can be used for shielding an interference electric field generated by the conducting layer, so that the brightness display uniformity of the LED display panel is effectively ensured, and the LED display panel can realize a borderless design and improve the look and feel of the display device.
According to the embodiment of the invention, the LED display panel further comprises a third insulating layer, a second grid and a first grid, wherein the third insulating layer is arranged on one side, far away from the substrate, of the second insulating layer and covers the active layer, the second grid is arranged on one side, far away from the substrate, of the third insulating layer, and is electrically connected with the first grid through a first via hole penetrating through the second insulating layer and the third insulating layer, and the width of the first grid is larger than that of the second grid in the direction of electron migration in a channel of the active layer.
According to an embodiment of the present invention, a single-side width of the first gate electrode is larger than a single-side width of the second gate electrode in a direction of electron migration in a channel of the active layer.
According to an embodiment of the present invention, in a direction of electron migration in a channel of the active layer, a difference between a single-side width of the first gate electrode and a single-side width of the second gate electrode is 1.5 μm or more.
According to an embodiment of the present invention, in a direction of electron migration in a channel of the active layer, a difference between a single-side width of the first gate electrode and a single-side width of the second gate electrode is less than or equal to 5 micrometers.
According to the embodiment of the invention, the LED display panel further comprises a first electrode plate and a second electrode plate of the storage capacitor, wherein the first electrode plate and the first grid are arranged in the same layer, and the second electrode plate and the second grid are arranged in the same layer.
According to the embodiment of the invention, the LED display panel further comprises a fourth insulating layer, a source electrode and a drain electrode, wherein the fourth insulating layer is arranged on one side, far away from the substrate, of the third insulating layer and covers the second grid electrode, the source electrode and the drain electrode are arranged on one side, far away from the substrate, of the fourth insulating layer, the drain electrode is electrically connected with the active layer through a second through hole, the source electrode is electrically connected with the active layer through a third through hole, and the source electrode is electrically connected with the conducting layer through a through hole.
According to the embodiment of the invention, the LED display panel further comprises a first conductive structure and a second conductive structure, wherein the first conductive structure is arranged on the same layer as the first grid electrode, the second conductive structure is arranged on the same layer as the second grid electrode, the source electrode is electrically connected with the second conductive structure through a fourth via hole penetrating through the fourth insulating layer, the second conductive structure is electrically connected with the first conductive structure through a fifth via hole penetrating through the second insulating layer and the third insulating layer, and the first conductive structure is electrically connected with the conductive layer through a sixth via hole penetrating through the first insulating layer.
According to the embodiment of the invention, the LED display panel further comprises a source electrode and a drain electrode, wherein the source electrode and the drain electrode are arranged on the surface, away from the substrate, of the second insulating layer and are in contact with the active layer, and a third conductive structure is arranged on the same layer as the first grid electrode, wherein the source electrode is electrically connected with the third conductive structure through an eighth through hole penetrating through the second insulating layer, and the third conductive structure is electrically connected with the conductive layer through a ninth through hole penetrating through the first insulating layer.
According to the embodiment of the invention, the substrate comprises a glass substrate and a flexible substrate, and further comprises a sacrificial layer, a binding pad and a bonding pad, wherein the sacrificial layer is arranged on the surface, close to the flexible substrate, of the glass substrate, the binding pad is arranged on the surface, far away from the glass substrate, of the sacrificial layer, and the conductive layer is electrically connected with the binding pad through a seventh through hole.
In another aspect of the present invention, a method of preparing the aforementioned LED display panel is provided. According to the embodiment of the invention, the method for manufacturing the LED display panel comprises the steps of forming a conductive layer on one side of a substrate, forming a first insulating layer on one side of a base substrate, wherein the first insulating layer covers the conductive layer, forming a first grid electrode on one side of the first insulating layer away from the substrate, forming a second insulating layer on one side of the first insulating layer away from the substrate, wherein the second insulating layer covers the first grid electrode, and forming an active layer on one side of the second insulating layer away from the substrate, wherein the first grid electrode is used for shielding an interference electric field generated by the conductive layer. Therefore, under the condition that extra capacitance and wiring are not added, an electric field generated by a first grid electrode in the structure of a TFT in the LED display panel can be used for shielding an interference electric field generated by a conducting layer, so that the brightness display uniformity of the LED display panel is effectively ensured, the LED display panel can be designed without a frame, the look and feel of a display device is improved, and in addition, the preparation process is mature, the flow is simple, and the industrial production is convenient.
According to the embodiment of the invention, the method for manufacturing the LED display panel further comprises the steps of forming a third insulating layer on one side, far away from the substrate, of the second insulating layer, wherein the third insulating layer covers the active layer, forming a second grid electrode on one side, far away from the substrate, of the third insulating layer, and electrically connecting the second grid electrode with the first grid electrode through a first via hole penetrating through the second insulating layer and the third insulating layer, and the width of the first grid electrode is larger than that of the second grid electrode in the direction of electron migration in a channel of the active layer.
In yet another aspect of the present invention, an LED display device is provided. According to an embodiment of the present invention, the LED display device includes the aforementioned display panel. Therefore, the LED display device has uniform brightness display and can realize a borderless design. Those skilled in the art will appreciate that the display device has all of the features and advantages of the LED display panel described above and will not be described in detail herein.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic diagram of an LED display panel according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an LED display panel according to another embodiment of the present invention;
FIG. 3 is a schematic view of an LED display panel according to another embodiment of the present invention;
FIG. 4 is a schematic plan view showing a part of the structure of an LED display panel according to still another embodiment of the present invention;
fig. 5 is a schematic plan view showing a part of the structure of an LED display panel according to still another embodiment of the present invention.
Detailed Description
The scheme of the present invention will be explained below with reference to examples. It will be appreciated by those skilled in the art that the following examples are illustrative of the present invention and should not be construed as limiting the scope of the invention. The examples are not to be construed as limiting the specific techniques or conditions described in the literature in this field or as per the specifications of the product.
In one aspect of the invention, an LED display panel is provided. According to an embodiment of the invention, referring to fig. 1, the LED display panel includes a substrate 10, a conductive layer (Fanout) 20 disposed on one side of the substrate 10, a first insulating layer 31 disposed on one side of the substrate 10 and covering the conductive layer 20, a first gate 41 disposed on one side of the first insulating layer 31 away from the substrate 10, a second insulating layer 32 disposed on one side of the first insulating layer 31 away from the substrate 10 and covering the first gate 41, and an active layer 50 disposed on one side of the second insulating layer 32 away from the substrate 10, wherein the first gate is used for shielding an interference electric field generated by the conductive layer. Therefore, under the condition of not adding extra capacitance and wiring, the electric field generated by the first grid electrode in the structure of the TFT in the LED display panel can be used for shielding an interference electric field generated by the conducting layer, so that the brightness display uniformity of the LED display panel is effectively ensured, and the LED display panel can realize a borderless design and improve the look and feel of the display device.
According to an embodiment of the present invention, the LED display panel is of a dual-gate structure, referring to FIG. 2, the LED display panel further includes a third insulating layer 33, the third insulating layer 33 being disposed at a side of the second insulating layer 32 remote from the substrate base plate 10 and covering the active layer 50, a second gate 42, the second gate 42 being disposed at a side of the third insulating layer 33 remote from the substrate base plate 10, and the second gate 42 being electrically connected to the first gate 41 through a first via 323 penetrating the second insulating layer 32 and the third insulating layer 33, wherein a width d1 of the first gate 41 is greater than a width d2 of the second gate 42 in a direction of electron migration in a channel of the active layer 50. Therefore, through the arrangement of the first grid, the width of the first grid is larger than that of the second grid, the first grid and the second grid share the grid potential, and under the condition that extra capacitance and wiring are not added, an interference electric field generated by an electric field shielding conducting layer of a TFT (thin film transistor) in the LED display panel can be utilized, so that the brightness of the LED display panel is effectively ensured to be uniformly displayed, and in addition, the LED display panel can realize a borderless design and improve the look and feel of a display device.
The second gate electrode 42 is electrically connected to the first gate electrode 41 through the first via hole 323 penetrating the second insulating layer 32 and the third insulating layer 33, wherein the first via hole 323 does not penetrate the active layer 50, and only the first via hole 323 electrically connecting the first gate electrode 41 and the second gate electrode 42 is shown in fig. 2. In addition, it will be appreciated by those skilled in the art that the orthographic projections of the first gate electrode and the second gate electrode on the substrate each cover the orthographic projection of the channel region in the active layer on the substrate.
The conducting layer (Fanout) is a sector signal line, and can comprise a part of GOA signal lines, VDD, VSS wires, data lines, MUX wires and the like, after the signal lines are bound on the back of the LED display panel, the signal lines can be connected into the display area in the first row of the LED display panel for signal transmission, and in the signal transmission process, an electric field in the conducting layer can inevitably influence the pixel circuit. In order to shield the disturbing electric field generated by the conductive layer 20, a large area of metal layer may be disposed between the substrate and the active layer (i.e., the bottom of the pixel circuit, such as on the surface of the first insulating layer near the substrate), and an additional electric potential may be connected to the metal layer, but the inventors have unexpectedly found that the load of the display panel of this structure increases (equivalent to adding a huge capacitive substrate), resulting in an increased risk of disconnection. Therefore, in the structure of the display panel, the wiring of the shielding layer (namely the second grid electrode) is simplified, and the load of the display panel can be reduced.
According to an embodiment of the present invention, referring to fig. 2, the single-side width of the first gate electrode 41 is greater than the single-side width of the second gate electrode 42 in the direction of electron migration in the channel of the active layer 50. Thereby, the disturbing electric field generated by the conductive layer 20 can be effectively shielded from its influence on the pixel circuit TFT. As will be understood by those skilled in the art, the "single-sided width" refers to the width of the first gate electrode not only being larger than the width of the second gate electrode, but also being on both sides in the width direction of the first gate electrode (or in the direction of electron migration in the channel of the active layer 50), the side edges of the first gate electrode being located outside the side edges of the second gate electrode (i.e., outside refers to the side away from the channel region in the width direction of the first gate electrode).
According to an embodiment of the present invention, referring to fig. 2, a difference Δd (Δd= (d 1-d 2)/2) between the single side width of the first gate 41 and the single side width of the second gate 42 in the direction of electron migration in the channel of the active layer is 1.5 micrometers or more, such as Δd is 1.5 micrometers, 1.8 micrometers, 2 micrometers, 2.3 micrometers, 2.5 micrometers, 3 micrometers, 3.2 micrometers, 3.5 micrometers, 3.8 micrometers, 4.0 micrometers, 4.5 micrometers, 4.8 micrometers or 5 micrometers. Therefore, the second grid electrode can be further ensured to effectively shield the interference electric field generated by the conductive layer 20 so as not to influence the pixel circuit TFT. Further, it is understood by those skilled in the art that Δd= (d 1-d 2)/2 when the difference Δd of the single-side widths of the first gate and the second gate are equal.
According to the embodiment of the present invention, in the direction of electron migration in the channel of the active layer, the difference Δd between the single-side width of the first gate electrode 41 and the single-side width of the second gate electrode 42 is less than or equal to 5 μm. Thereby, the generation of parasitic capacitance can be avoided from affecting the electric signal of the pixel circuit TFT.
According to the embodiment of the invention, the first insulating layer may be a buffer layer, the second insulating layer may be a first gate insulating layer, and the third insulating layer may be a second gate insulating layer, where materials forming the first insulating layer, the second insulating layer, and the third insulating layer are not particularly required, and may be flexibly selected according to practical situations by a person skilled in the art, for example, may be silicon nitride, silicon oxide, silicon oxynitride, or an organic insulating material.
According to an embodiment of the present invention, referring to fig. 3, the led display panel further includes a fourth insulating layer 34, the fourth insulating layer 34 being disposed at a side of the third insulating layer 33 remote from the substrate base plate 10 and covering the second gate electrode 42, a source electrode 75 and a drain electrode 76, the source electrode 75 and the drain electrode 76 being disposed at a side of the fourth insulating layer 34 remote from the substrate base plate 10, the drain electrode 76 being electrically connected to the active layer 50 through a second via 761, the source electrode 75 being electrically connected to the active layer 50 through a third via 751, and the source electrode 75 being electrically connected to the conductive layer 20 through a via. The fourth insulating layer may be a passivation layer, and a material forming the fourth insulating layer includes, but is not limited to, silicon nitride, silicon oxide, silicon oxynitride, an organic insulating material, or the like.
In the case of the LED display panel having the dual-gate structure according to the embodiment of the present invention, the top plan view of the structures of the first gate 41, the second gate 42, the source 75, the drain 76, and the active layer 50 may be shown in fig. 4, wherein the first gate 41 and the second gate 42 are electrically connected through the first via 232, and thus it can be seen that the first via 323 does not penetrate through the active layer 50.
According to an embodiment of the present invention, referring to fig. 3, the led display panel further includes a first conductive structure 73, the first conductive structure 73 being disposed in the same layer as the first gate 41, and a second conductive structure 74, the second conductive structure 74 being disposed in the same layer as the second gate 42, wherein the source electrode 75 is electrically connected to the second conductive structure 74 through a fourth via 752 penetrating the fourth insulating layer 34, the second conductive structure 74 is electrically connected to the first conductive structure 73 through a fifth via 741 penetrating the second insulating layer 32 and the third insulating layer 33, and the first conductive structure 73 is electrically connected to the conductive layer 20 through a sixth via 731 penetrating the first insulating layer 31. Therefore, the first conductive structure and the second conductive structure are used for realizing the electric connection between the source electrode and the conductive layer, so that the impedance between the source electrode and the conductive layer can be effectively reduced, and the number of insulating layers between the source electrode and the conductive layer is large, so that the source electrode and the conductive layer are difficult to directly realize the electric connection through the through hole during manufacturing. It should be noted that, if the display panel further includes the barrier layer 64 disposed on a side of the conductive layer 20 near the substrate, the sixth via 731 needs to further penetrate through the barrier layer 64, as shown in fig. 3.
According to an embodiment of the present invention, referring to fig. 3, the led display panel further includes a first electrode plate 71 and a second electrode plate 72 of the storage capacitor, wherein the first electrode plate 71 and the first gate 41 are disposed in the same layer, i.e., the first electrode plate 71 and the first gate 41 are manufactured by the same process step, and the second electrode plate 72 and the second gate 42 are disposed in the same layer, i.e., the second electrode plate 72 and the second gate 42 are manufactured by the same process step. Thus, the process flow can be simplified.
According to the embodiment of the invention, the LED display panel is of a single-delete structure, and further comprises a source electrode 75 and a drain electrode 76, wherein the source electrode 75 and the drain electrode 76 are arranged on the surface of the second insulating layer 32 far from the substrate base plate 10 and are in contact with the active layer 50, and a third conductive structure 77, the third conductive structure 77 is arranged on the same layer as the first grid electrode 41, the source electrode 75 is electrically connected with the third conductive structure 77 through an eighth via 753 penetrating through the second insulating layer 32, and the third conductive structure 77 is electrically connected with the conductive layer 20 through a ninth via 771 penetrating through the first insulating layer 31. Therefore, the third conductive structure is used for realizing the electric connection between the source electrode and the conductive layer, so that the impedance between the source electrode and the conductive layer can be effectively reduced, and the number of insulating layers between the source electrode and the conductive layer is large, so that the source electrode and the conductive layer are difficult to directly realize the electric connection through the through hole during manufacturing. Note that, if the display panel further includes the barrier layer 64 disposed on a side of the conductive layer 20 near the substrate, the ninth via 771 needs to further penetrate through the barrier layer 64, as shown in fig. 1. Further, a top plan view of the structures of the first gate 41, the source 75, the drain 76, and the active layer 50 may be shown with reference to fig. 5.
Further, when the LED display panel is in a single-delete structure, as shown in fig. 1, the first electrode plate 71 of the storage capacitor is still disposed in the same layer as the first gate 41, i.e. the first electrode plate 71 and the first gate 41 are fabricated by the same process step, and the second electrode plate 72 is disposed in the same layer as the source 75 and the drain 76, i.e. the second electrode plate 72 and the source 75 and the drain 76 are fabricated by the same process step.
According to an embodiment of the present invention, as shown in fig. 3 and 1, the substrate board 10 includes a glass board 11 and a flexible board 12, the led display panel further includes a sacrificial layer 61, the sacrificial layer 61 being disposed on a surface of the glass board 11 close to the flexible board 12, and a bonding pad 62, the bonding pad 62 being disposed on a surface of the sacrificial layer 61 remote from the glass board 11, wherein the conductive layer 20 is electrically connected to the bonding pad 61 through a seventh via 201. The number of the binding pads is not particularly required, and those skilled in the art can flexibly design the binding pads according to actual requirements, and only one schematic diagram of the binding pads is shown in fig. 1 and 3.
Further, as shown in fig. 3 and 1, the LED display panel may further include at least one of a passivation layer 63 disposed between the flexible substrate 12 and the conductive layer 20, a Barrier layer 64 disposed on a side of the passivation layer 63 remote from the flexible substrate and covering the conductive layer 20, and a hole filler 80 filled in the hole in the third insulating layer 33, the surface of which is flush with the surface of the third insulating layer 33 remote from the flexible substrate.
According to the embodiment of the present invention, the specific material forming the active layer is not particularly required, and those skilled in the art can flexibly select according to actual situations. In some embodiments, the material forming the active layer may be an oxide such as polysilicon or IGZO, znON, IZTO, and the inventors found that when the material forming the active layer is an oxide such as IGZO, znON, IZTO, the first gate electrode may better shield the interference electric field generated by the conductive layer, thereby better improving uniformity of display brightness.
In another aspect of the present invention, a method of preparing the aforementioned LED display panel is provided. According to an embodiment of the present invention, a method of manufacturing an LED display panel includes:
And S100, forming a conductive layer 20 on one side of the substrate base plate 10.
S200, forming a first insulating layer 31 on one side of the substrate base 10, wherein the first insulating layer 31 covers the conductive layer 20;
s300, forming a first gate 41 on a side of the first insulating layer 31 away from the substrate base plate 10;
s400, forming a second insulating layer 32 on a side of the first insulating layer 31 away from the substrate 10, wherein the second insulating layer 32 covers the first gate 41;
The active layer 50 is formed on the side of the second insulating layer 32 away from the substrate 10, wherein the first gate electrode is used for shielding the interference electric field generated by the conductive layer. The schematic structure of the LED display panel manufactured by the above method may be referred to fig. 1.
According to the embodiment of the invention, through the steps of the manufacturing method of S100-S500, under the condition that extra capacitance and wiring are not added, an interference electric field generated by the electric field shielding conducting layer generated by the first grid electrode in the TFT structure of the LED display panel can be utilized, so that the brightness uniformity of the LED display panel is effectively ensured, the LED display panel can be designed without a frame, the appearance of a display device is improved, and in addition, the manufacturing process is mature, the flow is simple, and the industrial production is convenient.
According to an embodiment of the present invention, the LED display panel is a single-delete structure, and as shown in fig. 1, the method for fabricating the LED display panel further includes forming a source electrode 75 and a drain electrode 76, the source electrode 75 and the drain electrode 76 being formed on a surface of the second insulating layer 32 remote from the substrate 10 and disposed in contact with the active layer 50, and forming a third conductive structure 77, the third conductive structure 77 being disposed in the same layer as the first gate 41, wherein the source electrode 75 is electrically connected to the third conductive structure 77 through an eighth via 753 penetrating the second insulating layer 32, and the third conductive structure 77 is electrically connected to the conductive layer 20 through a ninth via 771 penetrating the first insulating layer 31. Therefore, the third conductive structure is used for realizing the electric connection between the source electrode and the conductive layer, so that the impedance between the source electrode and the conductive layer can be effectively reduced, and the number of insulating layers between the source electrode and the conductive layer is large, so that the source electrode and the conductive layer are difficult to directly realize the electric connection through the through hole during manufacturing. Note that, if the display panel further includes the barrier layer 64 formed on the side of the conductive layer 20 near the substrate, the ninth via 771 needs to further penetrate through the barrier layer 64, as shown in fig. 1. Further, a top plan view of the structures of the first gate 41, the source 75, the drain 76, and the active layer 50 may be shown with reference to fig. 5.
Further, when the LED display panel is in a single-delete structure, as shown in fig. 1, the first electrode plate 71 of the storage capacitor is still disposed in the same layer as the first gate 41, i.e. the first electrode plate 71 and the first gate 41 are fabricated by the same process step, and the second electrode plate 72 is disposed in the same layer as the source 75 and the drain 76, i.e. the second electrode plate 72 and the source 75 and the drain 76 are fabricated by the same process step.
According to an embodiment of the present invention, the method of manufacturing an LED display panel further includes:
S600 forming a third insulating layer 33 on a side of the second insulating layer 32 away from the substrate base plate 10, and the third insulating layer 33 covering the active layer 50;
at S700, a second gate electrode 42 is formed on a side of the third insulating layer 33 away from the substrate 10, and the second gate electrode 42 is electrically connected to the first gate electrode 41 through a first via hole 323 penetrating the second insulating layer 32 and the third insulating layer 33, wherein a width d1 of the first gate electrode 41 is greater than a width d2 of the second gate electrode 42 in a direction of electron migration in a channel of the active layer, and a schematic structural diagram can refer to fig. 2.
According to the embodiment of the invention, through the steps of the manufacturing method of S100-S700, in the manufacturing method, the first grid is arranged, the width of the first grid is larger than that of the second grid, the first grid and the second grid share the grid potential, the interference electric field generated by the electric field shielding conducting layer of the TFT in the LED display panel can be utilized under the condition that no extra capacitance and wiring are added, the brightness display uniformity of the LED display panel is ensured, in addition, the LED display panel can realize the borderless design, the appearance of the display device is improved, in addition, the manufacturing process is mature, the flow is simple, and the industrial production is convenient.
According to an embodiment of the present invention, referring to fig. 2, the single-side width of the first gate electrode 41 is greater than the single-side width of the second gate electrode 42 in the direction of electron migration in the channel of the active layer 50. Thereby, the disturbing electric field generated by the conductive layer 20 can be effectively shielded from its influence on the pixel circuit TFT. Referring to fig. 2, in the direction of electron migration in the channel of the active layer, a difference Δd (Δd= (d 1-d 2)/2) between the single-side width of the first gate electrode 41 and the single-side width of the second gate electrode 42 is 1.5 micrometers or more, such as Δd of 1.5 micrometers, 1.8 micrometers, 2 micrometers, 2.3 micrometers, 2.5 micrometers, 3 micrometers, 3.2 micrometers, 3.5 micrometers, 3.8 micrometers, 4.0 micrometers, 4.5 micrometers, 4.8 micrometers, or 5 micrometers. Therefore, the second grid electrode can be further ensured to effectively shield the interference electric field generated by the conductive layer 20 so as not to influence the pixel circuit TFT. Further, it is understood by those skilled in the art that Δd= (d 1-d 2)/2 when the difference Δd of the single-side widths of the first gate and the second gate are equal. In some embodiments, a difference Δd between the single-side width of the first gate 41 and the single-side width of the second gate 42 in the direction of electron migration in the channel of the active layer is less than or equal to 5 micrometers. Thereby, the generation of parasitic capacitance can be avoided from affecting the electric signal of the pixel circuit TFT.
The method for manufacturing the LED display panel according to the embodiment of the present invention further includes a step of forming the first electrode plate 71 and the second electrode plate 72 of the storage capacitor, wherein the first electrode plate 71 and the first gate electrode 41 are formed through the same process step, and the second electrode plate 72 and the second gate electrode 42 are formed through the same process step, and the schematic structural view can be referred to fig. 3. Thus, the first electrode plate 71 and the first grid electrode can be manufactured through the same process step, and the process flow is simplified.
The method of fabricating the LED display panel according to an embodiment of the present invention further includes forming the fourth insulating layer 34, the fourth insulating layer 34 being formed on a side of the third insulating layer 33 remote from the substrate 10 and covering the second gate electrode 42, forming the source electrode 75 and the drain electrode 76, the source electrode 75 and the drain electrode 76 being formed on a side of the fourth insulating layer 34 remote from the substrate 10, the drain electrode 76 being electrically connected to the active layer 50 through the second via 761, the source electrode 75 being electrically connected to the active layer 50 through the third via 751, and the source electrode 75 being electrically connected to the conductive layer 20 through the via, and the schematic structure being as shown in fig. 3. The fourth insulating layer may be a passivation layer, and a material forming the fourth insulating layer includes, but is not limited to, silicon nitride, silicon oxide, silicon oxynitride, an organic insulating material, or the like.
The method of fabricating the LED display panel according to the embodiment of the present invention further includes forming the first conductive structure 73, the first conductive structure 73 being formed through the same process step as the first gate electrode 41, and forming the second conductive structure 74, the second conductive structure 74 being formed through the same process step as the second gate electrode 42, wherein the source electrode 75 is electrically connected to the second conductive structure 74 through the fourth via 752 penetrating the fourth insulating layer 34, the second conductive structure 74 is electrically connected to the first conductive structure 73 through the fifth via 741 penetrating the second insulating layer 32 and the third insulating layer 33, and the first conductive structure 73 is electrically connected to the conductive layer 20 through the sixth via 731 penetrating the first insulating layer 31, and the schematic structure is as shown in fig. 3. Thereby, the method is used for the treatment of the heart disease. The first conductive structure and the second conductive structure are used for realizing the electric connection between the source electrode and the conductive layer, so that the impedance between the source electrode and the conductive layer can be effectively reduced, and the number of insulating layers between the source electrode and the conductive layer is large, so that the source electrode and the conductive layer are difficult to realize electric connection directly through the through hole during manufacturing.
According to an embodiment of the present invention, as shown in fig. 3 and 1, the substrate board 10 includes a glass substrate 11 and a flexible substrate 12, and the method of fabricating the LED display panel further includes forming a sacrificial layer 61, the sacrificial layer 61 being formed on a surface of the glass substrate 11 close to the flexible substrate 12, forming a bonding pad 62, the bonding pad 62 being formed on a surface of the sacrificial layer 61 remote from the glass substrate 11, wherein the conductive layer 20 is electrically connected to the bonding pad 61 through a seventh via 201. The number of the binding pads is not particularly required, and those skilled in the art can flexibly design the binding pads according to actual requirements, and only one schematic diagram of the binding pads is shown in fig. 1 and 3.
In yet another aspect of the present invention, an LED display device is provided. According to an embodiment of the present invention, the LED display device includes the aforementioned display panel. Therefore, the LED display device has uniform brightness display and can realize a borderless design. Those skilled in the art will appreciate that the display device has all of the features and advantages of the LED display panel described above and will not be described in detail herein.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (11)
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