CN114446814A - Detection method for wafer sliding sheet - Google Patents
Detection method for wafer sliding sheet Download PDFInfo
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- CN114446814A CN114446814A CN202210123160.XA CN202210123160A CN114446814A CN 114446814 A CN114446814 A CN 114446814A CN 202210123160 A CN202210123160 A CN 202210123160A CN 114446814 A CN114446814 A CN 114446814A
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Abstract
本发明提供一种晶圆滑片的检测方法，包括：提供实时形貌控制单元，所述实时形貌控制单元适于根据电磁感应作用检测物体厚度；采用所述实时形貌控制单元对测试晶圆进行检测，获取所述测试晶圆的测试研磨终点信号强度；根据所述测试研磨终点信号强度获取第一阈值；在对晶圆进行研磨的过程中，采用所述实时形貌控制单元对所述晶圆进行检测，获取所述晶圆的研磨信号强度随时间的变化曲线；当所述晶圆的所述研磨信号强度小于所述第一阈值时，判断所述晶圆发生滑片。本发明的晶圆滑片的检测方法判断及时，灵敏度高。
The present invention provides a wafer slide detection method, comprising: providing a real-time profile control unit, the real-time profile control unit is suitable for detecting the thickness of an object according to electromagnetic induction; using the real-time profile control unit to test the wafer Perform detection to obtain the signal strength of the test grinding end point of the test wafer; obtain a first threshold according to the signal strength of the test grinding end point; in the process of grinding the wafer, use the real-time topography control unit to control the The wafer is detected to obtain a time-dependent curve of the grinding signal intensity of the wafer; when the grinding signal intensity of the wafer is less than the first threshold, it is determined that the wafer has slipped. The detection method of the wafer slide of the present invention is timely judged and has high sensitivity.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for detecting a wafer slip sheet.
Background
With the emerging gradual application of 5G, the super-high speed, super-low time delay, super-high density and other advantages of the super-high speed super-low time delay super-high density super-high speed super-high density super-high speed super-low time super-high density super-high speed super-high density super-low time super-high speed super-high density super-high speed super-high density super-high speed super-high density super-high speed super-high density super-high speed super-high density super-high technology. This requires that the chips produced by the 5G technology have high efficiency and low energy consumption. With the development of semiconductor chip manufacturing technology, the role and requirement of Chemical Mechanical Planarization (CMP) process for 200mm and above wafers in chip production are increasing. From 0.13 μm to 14nm, even 7nm, 5nm and the like, increasingly complex polishing materials and increasing polishing requirements have increasingly strict requirements on the grinding process of copper CMP.
In order to precisely control the polishing thickness of the wafer, laser or friction is generally used in the copper CMP process to receive or sense the signal change of light and force, which often causes the phenomenon of advancing or lagging polishing Endpoint (EP), resulting in insufficient polishing amount or excessive polishing amount of the wafer, and thus, the wafer needs to be repeatedly processed again or scrapped. Meanwhile, the wafer is easily subjected to the influence of the pressure applied by the polishing head, the friction force of the polishing pad, the fluid force of the polishing liquid and the rotating speed in the polishing process, so that a slip sheet (split out) is easily generated, and the wafer is easily collided with a machine table to cause fragments after being smoothly polished outside the polishing head. The existing laser sensing method is limited by the detection position of laser, has certain hysteresis, and has the problem that the wafer slip sheet cannot be detected in time.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defect that the conventional detection technology cannot detect the wafer slip sheet in time, and further provide a method for detecting the wafer slip sheet.
The invention provides a method for detecting a wafer slide sheet, which comprises the following steps: providing a real-time topography control unit, wherein the real-time topography control unit is suitable for detecting the thickness of an object according to the electromagnetic induction; detecting a test wafer by using the real-time morphology control unit to acquire the test grinding end point signal intensity of the test wafer; obtaining a first threshold value according to the intensity of the test grinding end point signal; in the process of grinding a wafer, detecting the wafer by adopting the real-time morphology control unit to obtain a time-varying curve of the grinding signal intensity of the wafer; and when the grinding signal intensity of the wafer is smaller than the first threshold value, judging that the wafer slides.
Optionally, the test wafers include a first test wafer to an nth test wafer, where N is an integer greater than or equal to 2; the step of obtaining the test polishing endpoint signal intensity of the test wafer comprises: acquiring the signal intensity of a first test grinding terminal point of a first test wafer to the signal intensity of an Nth test grinding terminal point of an Nth test wafer; according to the average grinding endpoint signal intensity and the standard deviation from the first testing grinding endpoint signal intensity to the Nth testing grinding endpoint signal intensity; and if the standard deviation is less than or equal to a second threshold value, taking the average polishing endpoint signal intensity as the test polishing endpoint signal intensity.
Optionally, the second threshold is 0-1.
Optionally, N is an integer greater than or equal to 10.
Optionally, the first threshold is greater than or equal to 50% and less than or equal to 90% of the intensity of the test polishing endpoint signal.
Optionally, the real-time topography control unit includes: an inductor adapted to generate a magnetic field and form eddy currents in a conductor within the magnetic field, and an electromagnetic signal sensor adapted to detect a strength of the eddy currents.
Optionally, after the wafer is judged to slide, the wafer is stopped to be ground.
The technical scheme of the invention has the following advantages:
the invention discloses a method for detecting a wafer slide sheet, which comprises the following steps: providing a real-time topography control unit, wherein the real-time topography control unit is suitable for detecting the thickness of an object according to the electromagnetic induction; detecting a test wafer by using the real-time morphology control unit to acquire the test grinding end point signal intensity of the test wafer; obtaining a first threshold value according to the intensity of the test grinding end point signal; in the process of grinding a wafer, detecting the wafer by adopting the real-time morphology control unit to obtain a time-varying curve of the grinding signal intensity of the wafer; and when the grinding signal intensity of the wafer is smaller than the first threshold value, judging that the wafer slides. The real-time morphology control unit detects according to the electromagnetic induction effect, the detected action area is far larger than that of laser, and feedback can be immediately made when the slip sheet occurs, specifically, the grinding signal suddenly drops until the grinding signal drops below the first threshold value. The detection method of the wafer slide sheet has the advantages of timely judgment and high sensitivity.
Further, the first threshold is greater than or equal to 50% and less than or equal to 90% of the test polishing endpoint signal intensity. If the first threshold is greater than 90% of the signal intensity of the test grinding end point, the first threshold is easily influenced by signal noise, so that misjudgment is made; if the first threshold is less than 50% of the intensity of the test grinding endpoint signal, the sensitivity is greatly reduced, which is not beneficial to stopping the grinding process in time.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic flow chart illustrating a method for detecting a wafer slider according to an embodiment of the present invention;
FIG. 2 is a graph illustrating the polishing signal intensity of a wafer over time according to a conventional method of an embodiment of the present invention;
FIG. 3 is a graph illustrating the intensity of polishing signals of a wafer under abnormal conditions with time according to an embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The invention provides a method for detecting a wafer slide sheet, which comprises the following steps as shown in figure 1:
step S1: providing a real-time topography control unit, wherein the real-time topography control unit is suitable for detecting the thickness of an object according to the electromagnetic induction;
step S2: detecting a test wafer by using the real-time morphology control unit to acquire the test grinding end point signal intensity of the test wafer;
step S3: obtaining a first threshold value according to the intensity of the test grinding end point signal;
step S4: in the process of grinding a wafer, detecting the wafer by adopting the real-time morphology control unit to obtain a time-varying curve of the grinding signal intensity of the wafer;
step S5: and when the grinding signal intensity of the wafer is smaller than the first threshold value, judging that the wafer slides.
The real-time morphology control unit detects according to the electromagnetic induction effect, the detected action area is far larger than that of laser, and feedback can be immediately made when the slip sheet occurs, specifically, the grinding signal intensity drops suddenly until the grinding signal intensity drops below the first threshold value. The detection method of the wafer slide sheet has the advantages of timely judgment, high sensitivity and easy automatic monitoring.
Before the wafer is ground, the wafer comprises: a wafer base layer structure; the barrier layer is positioned on the surface of the wafer base layer structure; grooves are arranged in the barrier layer and part of the wafer base layer structure; and the initial metal interconnection layer is positioned in the groove and on the surface of the barrier layer. And in the step of grinding the wafer, grinding the initial metal interconnection layer by adopting a CMP (chemical mechanical polishing) process until the barrier layer is exposed, so that the initial metal interconnection layer forms a metal interconnection layer positioned in the groove. The material of the metal interconnection layer comprises copper. After the metal interconnection layer is formed, the barrier layer is removed.
In this embodiment, the test wafers include a first test wafer to an nth test wafer, where N is an integer greater than or equal to 2; the step of obtaining the test polishing endpoint signal intensity of the test wafer comprises: acquiring the signal intensity of a first test grinding terminal point of a first test wafer to the signal intensity of an Nth test grinding terminal point of an Nth test wafer; according to the average grinding endpoint signal intensity and the standard deviation from the first testing grinding endpoint signal intensity to the Nth testing grinding endpoint signal intensity; and if the standard deviation is less than or equal to a second threshold value, taking the average polishing endpoint signal intensity as the test polishing endpoint signal intensity. Since the wafer performance parameters obtained from different batches and different intermediate steps have large differences, it is necessary to obtain the comparative reference value by obtaining the signal intensity of the test polishing endpoint of the test wafer. Specifically, when the consistency of the selected test wafer is good, the standard deviation is small, and the average grinding endpoint signal intensity can be directly used as the test grinding endpoint signal intensity; when the consistency of the selected test wafer is poor and the dispersion of the test data is large, the standard deviation is large, the data with the maximum deviation degree from the average value can be removed, the calculation of the average value and the standard deviation is repeated until the standard deviation is smaller than a second threshold value, and the corresponding average value can be used as an effective value for obtaining the signal intensity of the test grinding endpoint. In a specific embodiment, the second threshold is 0-1. In one embodiment, where N is an integer greater than or equal to 10, a more accurate test polishing endpoint signal intensity can be obtained.
In this embodiment, the time-dependent change curve of the polishing signal intensity of the wafer is obtained as shown in fig. 2 and 3. Fig. 2 shows the polishing signal intensity of a wafer in a conventional case as a function of time, wherein the abscissa is time and the ordinate is signal intensity. As can be seen from FIG. 2, the signal intensity decreases first with time, indicating that the wafer is polished to be thinner; and then, stabilizing, wherein the corresponding signal intensity in a stable state is the grinding endpoint signal intensity. Fig. 3 shows the polishing signal intensity of the wafer in an abnormal condition as a function of time, and a conventional curve is also marked with a dot-dash line for comparison, wherein the abscissa is time and the ordinate is signal intensity. As can be seen from fig. 3, the signal intensity also decreases first with time, which represents that the wafer is polished to be thin; and then before the signal intensity of the grinding end point is reached, the signal intensity suddenly drops until the signal intensity is lower than a first threshold value, and an abnormity is displayed, particularly a wafer slip occurs.
In one embodiment, the first threshold is greater than or equal to 50% and less than or equal to 90% of the test polishing endpoint signal intensity. If the first threshold is greater than 90% of the signal intensity of the test grinding end point, the first threshold is easily influenced by signal noise, so that misjudgment is made; if the first threshold is less than 50% of the signal intensity of the test grinding end point, the sensitivity is reduced to a greater extent, which is not beneficial to stopping the grinding equipment in time.
In this embodiment, the real-time profile control unit includes: an inductor adapted to generate a magnetic field and form eddy currents in a conductor within the magnetic field, and an electromagnetic signal sensor adapted to detect a strength of the eddy currents. Since eddy current is induced by the movement of metal in a varying electric field, and the larger the film thickness, the stronger the signal generated by the eddy current, the degree of polishing can be judged from the magnitude of the detected eddy current signal. The original electric signal can be converted into thickness information through a simple linear function, and parameters of the linear function need to be obtained by performing signal calibration on the real-time morphology control unit through a wafer with standard thickness in advance.
In this embodiment, after the wafer is judged to have the slip, the wafer is stopped being polished. In a specific embodiment, a slip sheet alarm device can be added.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (7)
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| CN202210123160.XA CN114446814A (en) | 2022-02-09 | 2022-02-09 | Detection method for wafer sliding sheet |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115839669A (en) * | 2022-09-05 | 2023-03-24 | 拓荆键科(海宁)半导体设备有限公司 | Detection method and device for wafer bonding sliding sheet and electronic equipment |
| CN116230570A (en) * | 2023-02-10 | 2023-06-06 | 北京天科合达半导体股份有限公司 | Wafer thickness measurement system and method |
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