CN114398809B - IGBT module junction temperature calculation method considering radiator - Google Patents
IGBT module junction temperature calculation method considering radiatorInfo
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- CN114398809B CN114398809B CN202111558221.7A CN202111558221A CN114398809B CN 114398809 B CN114398809 B CN 114398809B CN 202111558221 A CN202111558221 A CN 202111558221A CN 114398809 B CN114398809 B CN 114398809B
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Abstract
The invention relates to an IGBT junction temperature estimation method, in particular to an IGBT module junction temperature calculation method considering a radiator. According to the invention, from the engineering application point of view, the coupling condition of the FWD/IGBT chip on the heat conduction silicone grease layer under different working conditions is obtained by aiming at the high-power converter IGBT module with greatly changed operation working conditions through the result of finite element simulation, and the mathematical expression of the FWD/IGBT chip is obtained. The calculation resource cost and the precision of junction temperature estimation are comprehensively considered, and a thermal network mathematical model which considers the loss coupling condition of the IGBT chip and the FWD chip under different working conditions is provided.
Description
Technical Field
The invention relates to an IGBT junction temperature estimation method, in particular to an IGBT module junction temperature calculation method considering a radiator.
Background
Insulated Gate Bipolar Transistor (IGBT) modules are currently widely used in the fields of high-speed railways, energy automobiles, aerospace industry control, and the like as the most commonly used power devices in power electronic systems. Due to the complexity of the operation condition and the accumulation effect of long-term electrothermal stress, the IGBT module is easy to generate failure phenomenon. According to research, about 55% of module failures are induced by temperature factors in various failure factors, so that accurate estimation of IGBT junction temperature is of great importance for reliability assessment, health management and cycle life prediction of a system.
The IGBT module generally includes a plurality of IGBT chips and a plurality of FWD chips, and the layout of the IGBT chips and the FWD chips and the structure of the heat sink determine whether the temperature distribution on the IGBT chips and the FWD chips is high or low, and the uneven temperature distribution determines that the thermal stresses born by the respective IGBT chips and FWD chips are different. The thermal stress born by the IGBT chip and the FWD chip with high temperature is relatively large, so that the IGBT chip and the FWD chip are always damaged firstly, and the electrical stress born by other chips after the damage is increased, thereby accelerating the failure of the IGBT module. Therefore, it is very important to monitor the junction temperature of the IGBT chip and the FWD chip on the IGBT module.
In the process of transferring heat from the IGBT chip and the FWD chip to the radiator through the IGBT module, there is lateral heat diffusion in addition to the heat transfer in the vertical direction, which necessarily causes coupling of the losses generated on the IGBT chip and the FWD chip in the heat transfer path. The optical non-contact measurement method uses measuring instruments such as an infrared thermal imager to observe the IGBT junction temperature, and uses the infrared measuring instruments to have high cost, the IGBT packaging module is required to be subjected to shell breaking and silica gel removing treatment, the module is destructive, and the real-time measurement requirement cannot be met. The heat sensitive electrical parameter estimation method carries out reverse estimation on the IGBT junction temperature by measuring the heat sensitive electrical parameter in real time, and comprises a small current saturation voltage drop method, a driving voltage drop difference ratio method and a switching transient process induced voltage method, wherein the collected electric signal is weak for the heat sensitive electrical parameter, is easy to be subjected to electromagnetic interference, needs an additional auxiliary test instrument, and has high cost. The finite element simulation method has long three-dimensional modeling time for the IGBT module and the cooling system with complex structures, consumes a large amount of calculation time and cost for the power consumption load with long time scale, and has low simulation efficiency.
Disclosure of Invention
The method solves the problems in the aspects of (1) constructing an improved IGBT module thermal network model considering thermal coupling effect, (2) revealing the coupling rule of IGBT chip loss and FWD chip loss under different working conditions, and (3) extracting the parameters of the thermal network model by finite element simulation by using the structure of the IGBT module, the heat conduction silicone grease and the radiator, thereby realizing the maximum junction temperature dynamic response calculation of the IGBT chip and the FWD chip in the IGBT module.
The method is realized by adopting the following technical scheme that the method for calculating the junction temperature of the IGBT module by considering the radiator is used for constructing a thermal network model of the maximum junction temperature of the IGBT chip and the FWD chip, and according to the thermal network model, the calculation formula of the junction temperature T j_igbt of the IGBT chip is as follows:
Tj_igbt＝ΔTjc_igbt+ΔTgrease_igbt+ΔTplate_igbt+Ta,
The device comprises a T j_igbt, a delta T jc_igbt, a delta T grease_igbt, a delta T plate_igbt, a T a, a radiator cooling medium inlet temperature, wherein the T j_igbt is the maximum junction temperature of the IGBT chip, the delta T jc_igbt is the temperature rise from the junction of the IGBT chip with the highest junction temperature to the shell, the delta T grease_igbt is the temperature rise of the IGBT chip with the highest junction temperature corresponding to the heat-conducting silicone grease layer, the delta T plate_igbt is the temperature rise of the IGBT chip with the highest junction temperature corresponding to the radiator;
The calculation formula of the junction temperature T j_fwd of the FWD chip is as follows:
Tj_fwd＝ΔTjc_fwd+ΔTgrease_fwd+ΔTplate_fwd+Ta,
Wherein T j_fwd is the maximum junction temperature of the FWD chip, deltaT jc_fwd is the temperature rise from the junction of the FWD chip with the highest junction temperature to the shell, deltaT grease_fwd is the temperature rise of the FWD chip with the highest junction temperature corresponding to the heat conduction silicone grease layer, and DeltaT plate_fwd is the temperature rise of the FWD chip with the highest junction temperature corresponding to the radiator.
The IGBT module junction temperature calculating method considering the radiator,
Wherein R igbt、Cigbt is thermal resistance and heat capacity calculated by using the temperature difference between the maximum point temperature of the junction temperature of the IGBT chip and the corresponding vertical shell temperature;
R grease_igbt、Cgrease_igbt, calculating thermal resistance and heat capacity according to the vertical temperature difference of the vertical corresponding heat-conducting silicone grease layer of the maximum junction temperature point of the IGBT chip;
R plate_igbt、Cplate_igbt, calculating thermal resistance and heat capacity according to the temperature difference between the surface temperature of the corresponding radiator and the medium inlet temperature of the cold area at the maximum junction temperature point of the IGBT chip vertically;
P igbt, IGBT chip loss power;
P fwd FWD chip power loss;
P' fwd, a heat-conducting silicone grease layer, wherein the FWD chip is coupled with partial loss of a heat transfer path of the IGBT chip in a loss manner;
k fwd the loss generated at the FWD is a coefficient in the coupling of the thermally conductive silicone grease layer into the IGBT heat transfer path.
The IGBT module junction temperature calculating method considering the radiator,
R fwd、Cfwd, calculating thermal resistance and heat capacity according to the temperature difference between the maximum junction temperature point of the FWD chip and the corresponding vertical shell temperature;
R grease_fwd、Cgrease_fwd, calculating thermal resistance and heat capacity according to the vertical temperature difference of the thermal conduction silicone grease layer vertically corresponding to the maximum junction temperature point of the FWD chip;
r plate_fwd、Cplate_fwd, calculating thermal resistance and heat capacity according to the temperature difference between the surface temperature of the radiator and the medium inlet temperature of the cold area, which is vertically corresponding to the maximum junction temperature point of the FWD chip;
p' igbt a heat-conducting silicone grease layer, wherein the IGBT chip is coupled to part of the loss of the heat transfer path of the FWD chip in a loss manner;
k igbt the coefficient of loss generated on the IGBT in the coupling of the thermally conductive silicone grease layer into the FWD heat transfer path.
According to the IGBT module junction temperature calculation method considering the radiator, steady-state simulation is carried out according to different loss settings, and thermal resistances R grease_igbt and R grease_fwd and coupling coefficients k igbt and k fwd of the heat conduction silicone grease layer are extracted.
According to the IGBT module junction temperature calculation method considering the radiator, rated loss input is given, transient simulation is carried out, temperatures at different points are extracted, and parameters R igbt and C igbt、Rfwd and C fwd、Cgrease_igbt、Cgrease_fwd、Rplate_igbt and C plate_igbt、Rplate_fwd and C plate_fwd are identified according to a dynamic calculation formula of a thermal network model.
The method for calculating the junction temperature of the IGBT module considering the radiator is characterized in that the thermal network model is of a three-layer structure, the IGBT module, the heat conduction silicone grease and the radiator are considered, the IGBT module is free of coupling of loss generated on an IGBT chip and an FWD chip, the heat conduction silicone grease layer is partially coupled with the loss generated on the IGBT chip and the FWD chip, and the loss generated on the IGBT chip and the FWD chip is completely coupled after being transmitted to the radiator.
According to the IGBT module junction temperature calculation method considering the radiator, the coupling related parameters are calculated through the data of steady-state simulation of Icepak or Fluent finite element simulation software.
According to the IGBT module junction temperature calculation method considering the radiator, the heat resistance and heat capacity parameters are calculated through transient simulation data of Icepak or Fluent finite element simulation software.
According to the invention, from the engineering application point of view, the coupling condition of the FWD/IGBT chip on the heat conduction silicone grease layer under different working conditions is obtained by aiming at the high-power converter IGBT module with greatly changed operation working conditions through the result of finite element simulation, and the mathematical expression of the FWD/IGBT chip is obtained. The calculation resource cost and the precision of junction temperature estimation are comprehensively considered, and a thermal network mathematical model which considers the loss coupling condition of the IGBT chip and the FWD chip under different working conditions is provided.
Drawings
Fig. 1 is an IGBT module thermal network model.
Fig. 2 is a dynamic loss input curve.
FIG. 3 is a junction temperature curve calculated by the thermal network model.
Detailed Description
1. The invention provides an IGBT chip with the structure shown in figure 1 and a FWD chip maximum junction temperature calculation thermal network model. The thermal network considers a three-layer structure, namely an IGBT module, heat-conducting silicone grease and a radiator, wherein the IGBT module is not coupled with losses generated on an FWD chip, the heat-conducting silicone grease layer is partially coupled with the losses generated on the FWD chip, and the losses generated on the IGBT chip and the FWD chip are completely coupled after being transmitted to the radiator.
In fig. 1, the loss input is defined as follows:
P igbt IGBT chip loss power
P fwd FWD chip loss power
P' fwd thermally conductive silicone grease layer, FWD chip loss coupled to partial loss of IGBT chip heat transfer path
P '' fwd part of the radiator FWD chip that is loss-coupled to the IGBT chip, there is P fwd＝P′fwd+P″fwd
P' igbt Heat conduction Silicone grease layer, IGBT chip loss coupled to partial loss of FWD chip heat transfer path
P″ igbt the portion of the heat sink IGBT chip that is loss-coupled to the FWD chip, there is P igbt＝P′igbt+P″igbt in fig. 1, the thermal resistance-heat capacity parameters are defined as follows:
R igbt、Cigbt, calculating the heat resistance and heat capacity according to the temperature difference between the maximum point temperature of the junction temperature of the IGBT chip and the corresponding vertical shell temperature;
r grease_igbt、Cgrease_igbt, calculating the thermal resistance and heat capacity according to the vertical temperature difference of the vertical corresponding heat-conducting silicone grease layer of the maximum junction temperature point of the IGBT chip;
R plate_igbt、Cplate_igbt, calculating the heat resistance and heat capacity according to the temperature difference between the surface temperature of the corresponding radiator and the medium inlet temperature of the cold area at the maximum junction temperature point of the IGBT chip vertically;
R fwd、Cfwd, calculating the heat resistance and heat capacity according to the temperature difference between the maximum junction temperature point of the FWD chip and the corresponding vertical shell temperature;
R grease_fwd、Cgrease_fwd, calculating the thermal resistance and heat capacity by using the vertical corresponding thermal conduction silicone grease layer vertical temperature difference of the maximum junction temperature point of the FWD chip;
R plate_fwd、Cplate_fwd, calculating the thermal resistance and heat capacity according to the temperature difference between the surface temperature of the radiator and the medium inlet temperature of the cold area, which is vertically corresponding to the maximum junction temperature point of the FWD chip.
According to the thermal network model, the calculation of the junction temperature T j of the IGBT module chip is determined by the following relational expression.
y=f(△Tjc,△Tgrease,△Tplate,Ta) (1)
For the calculation of the IGBT chip junction temperature T j_igbt, the specific formula is as follows:
Tj_igbt＝ΔTjc_igbt+ΔTgrease_igbt+ΔTplate_igbt+Ta (2)
wherein:
T j_igbt maximum junction temperature of IGBT chip
DeltaT jc_igbt temperature rise from IGBT chip junction with highest junction temperature to shell
DeltaT grease_igbt temperature rise of IGBT chip with highest junction temperature corresponding to heat conduction silicone grease layer
DeltaT plate_igbt temperature rise of IGBT chip with highest junction temperature corresponding to radiator
T a radiator Cooling Medium Inlet temperature
For FWD chip junction temperature T j_fwd, the specific formula is as follows:
Tj_fwd＝ΔTjc_fwd+ΔTgrease_fwd+ΔTplate_fwd+Ta (6)
wherein:
Maximum junction temperature of FWD chip
DeltaT jc_fwd temperature rise from FWD chip junction with highest junction temperature to shell
DeltaT grease_fwd temperature rise of FWD chip with highest junction temperature corresponding to heat-conducting silicone grease layer
DeltaT plate_fwd temperature rise of FWD chip with highest junction temperature corresponding to radiator
T a radiator Cooling Medium Inlet temperature
2. And obtaining the coupling rule of the heat-conducting silicone grease layer under different working conditions.
And building a detailed finite element model of the multi-layer structure of the IGBT module containing the radiator structure. In engineering application, the loss of the IGBT chip and the FWD chip is generally caused by two factors, namely, the load current greatly fluctuates, and the debugging mode changes. The large change of load current generally causes the loss increase and decrease of the IGBT chip and the FWD chip, and the change of modulation scheme causes the change of the loss distribution ratio of the IGBT chip and the FWD chip. Therefore, for loss changes caused by load, modulation mode and other working conditions, the finite element simulation loss given mode is adopted:
IGBT loss given P igbt_g rated P igbt_e、0.8Pigbt_e、0.6Pigbt_e、0.4Pigbt_e、0.2Pigbt_e
FWD loss setting Pfwd_g：0.05Pigbt_g、0.1Pigbt_g、0.2Pigbt_g、0.4Pigbt_g、0.6Pigbt_g、0.8Pigbt_g、Pigbt_g.
P igbt_e is rated loss of the IGBT, and given loss of each IGBT, FWD loss with different proportions is selected to simulate magnitude change and proportion change of loss of the IGBT and the FWD in all working condition ranges.
And for given loss of various combinations of the IGBT and the FWD, respectively performing steady-state simulation calculation through finite element simulation software such as Icepak or Fluent and the like to obtain temperature differences DeltaT grease_igbt and DeltaT grease_fwd corresponding to the heat conduction silicone grease layers in the vertical direction of the junction temperature maximum point of the IGBT chip and the FWD chip.
Taking the loss of P igbt、Pfwd and DeltaT grease_igbt and DeltaT grease_fwd as known, taking the formula (10) and the formula (11) as steady-state junction temperature calculation relational expression taking coupling into consideration, respectively identifying the coupling coefficients k igbt and k fwd and the thermal resistances R grease_igbt and R grease_fwd of the IGBT and the FWD chip on the heat conduction silicone grease layer by adopting a least square method.
3. Thermal network model parameter acquisition
And the second step is to finish the calculation of steady-state parameter thermal resistance of the heat conduction silicone grease coupling layer, and the step is to explain the extraction of other parameters.
Establishing a detailed finite element model of an IGBT module multi-layer structure containing a radiator structure, setting the loss of an IGBT chip and an FWD chip as rated values, performing transient simulation calculation through finite element simulation software such as Icepak or Fluent and the like, obtaining temperature differences DeltaT jc_igbt, deltaT jc_fwd,△Tgrease_igbt, deltaT grease_fwd,△Tplate_igbt and DeltaT plate_fwd time sequence corresponding to a heat conduction silicone grease layer in the vertical direction of the junction temperature maximum point of the IGBT chip and the FWD chip, and respectively adopting formulas (3), (7), (4), (8), (5) and (9) to perform parameter identification to obtain R igbt and C igbt、Rfwd, C fwd、Cgrease_igbt、Cgrease_fwd、Rplate_igbt and C plate_igbt、Rplate_fwd and C plate_fwd.
Example 1
(1) Building an IGBT module, heat conduction silicone grease and water cooling substrate model in ANSYS;
(2) Performing steady-state simulation according to different loss settings, and extracting thermal resistance and coupling coefficient of the heat-conducting silicone grease layer;
(3) Giving rated loss input, performing transient simulation, extracting temperatures of different points, and performing parameter identification according to a dynamic calculation formula of a thermal network model;
(4) Setting up a thermal network model shown in fig. 1, setting parameters obtained in the steps (2) and (3), setting loss as shown in fig. 2, and calculating junction temperature of the IGBT and the FWD as shown in fig. 3.
Claims (4)
1. A calculation method of the junction temperature of an IGBT module considering a radiator is characterized by comprising the steps of building a thermal network model of the maximum junction temperature of an IGBT chip and an FWD chip, and according to the thermal network model, calculating the junction temperature T j_igbt of the IGBT chip according to a formula, wherein T j_igbt＝ΔTjc_igbt+ΔTgrease_igbt+ΔTplate_igbt+Ta is the maximum junction temperature of the IGBT chip, deltaT jc_igbt is the temperature rise from the junction temperature of the IGBT chip to a shell, deltaT grease_igbt is the temperature rise of a heat conduction silicone grease layer corresponding to the IGBT chip with the highest junction temperature, deltaT plate_igbt is the temperature rise of the heat conduction silicone grease layer corresponding to the IGBT chip with the highest junction temperature, and T a is the inlet temperature of a cooling medium of the radiator;
Wherein R igbt、Cigbt is thermal resistance and heat capacity calculated by using the temperature difference between the maximum point temperature of the junction temperature of the IGBT chip and the corresponding vertical shell temperature;
R grease_igbt、Cgrease_igbt, calculating thermal resistance and heat capacity according to the vertical temperature difference of the vertical corresponding heat-conducting silicone grease layer of the maximum junction temperature point of the IGBT chip;
R plate_igbt、Cplate_igbt, calculating thermal resistance and heat capacity according to the temperature difference between the surface temperature of the corresponding radiator and the medium inlet temperature of the cold area at the maximum junction temperature point of the IGBT chip vertically;
P igbt, IGBT chip loss power;
P fwd FWD chip power loss;
P' fwd, a heat-conducting silicone grease layer, wherein the FWD chip is coupled with partial loss of a heat transfer path of the IGBT chip in a loss manner;
k fwd coefficient of loss generated on FWD in coupling of thermally conductive silicone grease layer into IGBT heat transfer path;
The calculation formula of the junction temperature T j_fwd of the FWD chip is as follows:
t j_fwd＝ΔTjc_fwd+ΔTgrease_fwd+ΔTplate_fwd+Ta, wherein T j_fwd is the maximum junction temperature of the FWD chip, deltaT jc_fwd is the temperature rise of the junction of the FWD chip with the highest junction temperature to the shell, deltaT grease_fwd is the temperature rise of the heat-conducting silicone grease layer corresponding to the FWD chip with the highest junction temperature, and DeltaT plate_fwd is the temperature rise of the radiator corresponding to the FWD chip with the highest junction temperature;
r fwd、Cfwd, calculating thermal resistance and heat capacity according to the temperature difference between the maximum junction temperature point of the FWD chip and the corresponding vertical shell temperature;
R grease_fwd、Cgrease_fwd, calculating thermal resistance and heat capacity according to the vertical temperature difference of the thermal conduction silicone grease layer vertically corresponding to the maximum junction temperature point of the FWD chip;
r plate_fwd、Cplate_fwd, calculating thermal resistance and heat capacity according to the temperature difference between the surface temperature of the radiator and the medium inlet temperature of the cold area, which is vertically corresponding to the maximum junction temperature point of the FWD chip;
p' igbt a heat-conducting silicone grease layer, wherein the IGBT chip is coupled to part of the loss of the heat transfer path of the FWD chip in a loss manner;
k igbt coefficient of loss generated on IGBT in coupling of thermally conductive silicone grease layer into FWD heat transfer path;
According to different loss settings, steady-state simulation is carried out, thermal resistances R grease_igbt and R grease_fwd and coupling coefficients k igbt and k fwd of the heat conduction silicone grease layer are extracted, transient simulation is carried out given rated loss input, temperatures at different points are extracted, and parameters R igbt and C igbt、Rfwd, C fwd、Cgrease_igbt、Cgrease_fwd、Rplate_igbt, C plate_igbt、Rplate_fwd and C plate_fwd are identified according to a dynamic calculation formula of a thermal network model.
2. The method for calculating the junction temperature of the IGBT module considering the radiator according to claim 1 is characterized in that the thermal network model is of a three-layer structure, namely the IGBT module, the heat conduction silicone grease and the radiator, the IGBT module is free of coupling of losses generated on an IGBT chip and an FWD chip, the heat conduction silicone grease layer is partially coupled with the losses generated on the IGBT chip and the FWD chip, and the losses generated on the IGBT chip and the FWD chip are completely coupled after being transmitted to the radiator.
3. The method for calculating the junction temperature of the IGBT module considering the radiator according to claim 2, wherein the coupling related parameters are calculated through data of steady-state simulation of Icepak or Fluent finite element simulation software.
4. The method for calculating the junction temperature of the IGBT module considering the radiator according to claim 2, wherein the heat resistance and heat capacity parameters are calculated through transient simulation data of Icepak or Fluent finite element simulation software.
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