CN1143159C - Display and method of producing the display - Google Patents
Display and method of producing the display Download PDFInfo
- Publication number
- CN1143159C CN1143159C CNB951980157A CN95198015A CN1143159C CN 1143159 C CN1143159 C CN 1143159C CN B951980157 A CNB951980157 A CN B951980157A CN 95198015 A CN95198015 A CN 95198015A CN 1143159 C CN1143159 C CN 1143159C
- Authority
- CN
- China
- Prior art keywords
- film
- photosensitive polymer
- chromatic filter
- sheet
- colorful film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 111
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 58
- 229920002521 macromolecule Polymers 0.000 claims abstract 4
- 239000010408 film Substances 0.000 claims description 229
- 229920000642 polymer Polymers 0.000 claims description 96
- 239000011159 matrix material Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 55
- 239000010410 layer Substances 0.000 claims description 34
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 28
- 238000011161 development Methods 0.000 claims description 22
- 210000002858 crystal cell Anatomy 0.000 claims description 15
- 206010070834 Sensitisation Diseases 0.000 claims description 14
- 230000008313 sensitization Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 4
- 239000003086 colorant Substances 0.000 abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- 229920005591 polysilicon Polymers 0.000 description 22
- 230000008569 process Effects 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 238000009413 insulation Methods 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- 238000009826 distribution Methods 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- 239000002196 Pyroceram Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 238000005979 thermal decomposition reaction Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- 235000010724 Wisteria floribunda Nutrition 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000007767 bonding agent Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000006837 decompression Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 206010013786 Dry skin Diseases 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000004438 eyesight Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229940124543 ultraviolet light absorber Drugs 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical compound [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
A first and a second basal plates (1 and 2) are oppositely arranged; a liquid crystal layer (3) is arranged between the basal plates (1 and 2). a public electrode (5) is formed at one side of the liquid crystal layer (3) of the second basal plate (2); a display electrode (4) of a liquid crystal unit (LC) is formed at one side of the liquid crystal layer (3) of the first basal plate (2). A pixel driving element (106) is connected with the display electrode (4); color filters (8a-8c, 41a-41c and 51a-51c) in the chips with different colors of an RGB are composed of photosensitive macromolecule color films formed at one side of the liquid crystal layer (3) of the display electrode (4). Black matrices (9, 42 and 52) are respectively composed of photosensitive macromolecule color films (33 and 54) formed among the color filters (8a-8c, 41a-41c and 51a-51c) in the chips with different colors of the RGB.
Description
Technical field
The present invention relates to the manufacture method of display device and display device.
Background technology
In recent years, use thin film transistor (TFT) (TFT; LCD (the LCD of active matrix mode Thin Film TranSiStor); Liquid CryStal DiSplay) as the display device of high image quality, attracts much attention.
Use is configured to the dot matrix LCD that the point of matrix shows simple matrix mode and active matrix mode.
The simple matrix mode is that synchronously direct drive arrangements is the mode of liquid crystal of each pixel of matrix from the outside with sweep signal, and only the display part that constitutes LCD by show electrode and liquid crystal is pixel portions (liquid crystal display).Therefore, if number of scanning lines increases, the driving time (dutycycle) of then distributing to 1 pixel just reduces, thereby contrast will reduce.
On the other hand, the active matrix mode is that pixel drive elements (active component) and signal storage element (pixel capacity) are integrated on each pixel that is configured to matrix, each pixel is carried out a kind of storage action is quasi-static mode with liquid crystal drive.That is, pixel drive elements plays the function of switching the on/off state of switch according to sweep signal.And data-signal (shows signal) is transferred to show electrode by the pixel drive elements that is in conducting state, carries out the driving of liquid crystal.Then, when pixel drive elements becomes cut-off state, be added on the show electrode data-signal just with the state storage of electric charge in the signal storage element, before pixel drive elements becomes conducting state once more, carry out the driving of liquid crystal always.Therefore, even thereby number of scanning lines increases the driving time of distributing to 1 pixel to be reduced, and the driving of liquid crystal is also unaffected, thus contrast can not reduce yet.Therefore,, compare, can carry out the demonstration of quite high image quality with the simple matrix mode according to the active matrix mode.
The active matrix mode roughly is divided into transistor-type (3 terminal type) and diode-type (2 terminal type) with the difference of pixel drive elements.The feature of transistor-type is, compares with diode-type, makes difficulty, still, its reverse side then be improve contrast and image resolving rate easy, can realize the high-grade LCD that is equal to mutually with CRT.The explanation of the operating principle of above-mentioned active matrix mode mainly is the explanation corresponding with transistor-type.
As the pixel drive elements of transistor-type, use TFT usually.In TFT, the semiconductive thin film that forms on insulated substrate uses as active layer.As active layer, also use cadmium selenide (CDSE) and tellurium (TE) to study, still, general active layer is amorphous silicon film and polysilicon film.As active layer, use the TFT of amorphous silicon film to be called non-crystalline silicon tft, use the TFT of polysilicon film to be called multi-crystal TFT.Multi-crystal TFT is compared with non-crystalline silicon tft, and mobility is big, the driving force height.Therefore, multi-crystal TFT not only can be used as pixel drive elements and uses, and can be used as the element use that constitutes logical circuit.Therefore, if use multi-crystal TFT, not only can but also can all on same substrate, form integratedly pixel portions with being configured in its peripheral peripheral driving circuit portion.That is, can form as the multi-crystal TFT of the pixel drive elements that is configured in pixel portions and the multi-crystal TFT of formation peripheral driving circuit portion by same operation.
Yet in LCD, for color display, 3 primary colors that light must be set are red, green, blue (RGB; Red Green Blue) chromatic filter of all kinds.
For example, use in the color LCD with color LCD and direct-view in the liquid crystal projection of the one-board that uses 1 pixel portions (liquid crystal display), of all kinds corresponding one by one in order to make RGB in each pixel, chromatic filter of all kinds is set.
Here, when 1 pixel portions is provided with RGB chromatic filter of all kinds, between chromatic filter of all kinds, the black matrix that is made of photomask must be set.
The chromatic filter that has earlier is formed on and with the 1st substrate that forms pixel drive elements liquid crystal layer is clipped in the middle and on the 2nd substrate of relative configuration.But, when adopting this structure, be difficult to eliminate the departing from of relative position of the 1st substrate and the 2nd substrate.Therefore, must increase the width of the black matrix suitable with the precision of the position consistency that makes the 1st substrate and the 2nd substrate.As a result, the area of chromatic filter will reduce, thereby the area of the show electrode that can be used for showing also reduces.
The area of the show electrode that can be used for showing is called numerical aperture with respect to the ratio of the total area of pixel portions.Numerical aperture is big more, and the lightness of LCD is high more, thereby can carry out the demonstration of high image quality.
That is, in the chromatic filter of said structure, because numerical aperture is low, so, be difficult to obtain high image quality.
When the look border of chromatic filter does not have black matrix, boundary vicinity (to showing the part that does not have contribution) in pixel and pixel, light by 1 pixel (for example Lan pixel) in the pixel of the different colours adjacent to showing the pixel boundary intersection that not have contribution (for example will enter, red pixel), no colour mixture takes place easily.This no colour mixture will make colored image quality reduce.Therefore,,, carry out reliable look and separate, just can improve colored image quality by in to the scope that shows the part that does not have contribution, black matrix being set at the boundary vicinity of pixel and pixel.But, if make black matrix overlap onto show electrode position (to showing contributive part) thus when width is too big, then as mentioned above, numerical aperture will reduce.
Therefore, motion form the structure of chromatic filter in substrate one side that forms pixel drive elements.The chromatic filter of this structure is called chromatic filter in the sheet.If just chromatic filter in the employing sheet is the shortcoming that can avoid the location dislocation of above-mentioned each substrate to cause.
Below, in passing chromatic filter in the sheet is listed following each communique.
(a) spy opens clear 62-254122 communique (G02F 1/,133 327, G02B 5,/20 101, G02F 1/,133 306, G09F 9/30); In this communique, suppose and utilize decoration method, print process, electrolytic process to form chromatic filter.
(B) spy opens flat 4-253028 communique (G02F 1/1,335 505, G02F 1/,133 550, G02F 1/1,333 505, G09F 9/10); In this communique,, enumerated method that the resin insulating film that utilizes spin-coating method to form is dyeed and method that the insulating resin that forms in advance pigment or dyestuff being disperseed carries out the doubling of the image as the formation method of chromatic filter.
(C) spy opens flat 7-72473 communique (G02F 1/1,335 505, and G02F 1/1343, G02F 1/,136 500, G02F 1/,135 510); In this communique, suppose and utilize electrolytic process to form chromatic filter.
In recent years, in order to reduce the manufacturing cost of LCD, so, requirement can the sheet of simple and easy manufacturing in chromatic filter.
Summary of the invention
Purpose of the present invention aim to provide have can simple and easy manufacturing sheet in the display device of chromatic filter.In addition, another object of the present invention is to provide the simple and easy manufacture method with display device of chromatic filter in the sheet.
The display device that meets the present invention's the 1st viewpoint, its purport are to have chromatic filter in the sheet that is made of the photosensitive polymer colorful film.
According to a kind of display device of the present invention, have the relative the 1st with the 2nd substrate, be configured in liquid crystal layer between each substrate, chromatic filter in the public electrode that forms on the 2nd substrate of liquid crystal layer one side, show electrode, the pixel drive elements that is connected with show electrode, the sheet that constitutes by the photosensitive polymer colorful film that on the show electrode of liquid crystal layer one side, forms at the liquid crystal cells that forms on the 1st substrate of liquid crystal layer one side.
According to a kind of display device of the present invention, have the 1st and the 2nd relative substrate, be configured in liquid crystal layer between each substrate, chromatic filter, the black matrix that constitutes by the photosensitive polymer colorful film that in RGB sheet of all kinds, forms between the chromatic filter in the public electrode that forms on the 2nd substrate of liquid crystal layer one side, show electrode, the pixel drive elements that is connected with show electrode, the RGB that constitutes by the photosensitive polymer colorful film that on the show electrode of liquid crystal layer one side, forms sheet of all kinds at the liquid crystal cells that forms on first substrate of liquid crystal layer one side.
Manufacture method according to a kind of display device of the present invention may further comprise the steps:
On substrate, form pixel drive elements; With
Form the show electrode that is connected with pixel drive elements;
Described method is characterised in that,
The photosensitive polymer colorful film is pasted on the show electrode; With
The photosensitive polymer colorful film is carried out exposure-processed and development treatment, form chromatic filter in the sheet thus.
Manufacture method according to a kind of display device of the present invention comprises:
On substrate, form pixel drive elements;
Form the show electrode that is connected with pixel drive elements;
The photosensitive polymer colorful film of redness is pasted on the show electrode;
Photosensitive polymer colorful film to redness carries out exposure-processed and development treatment, forms chromatic filter in the red sheet thus;
The photosensitive polymer colorful film of green is pasted on the show electrode;
Photosensitive polymer colorful film to green carries out exposure-processed and development treatment, forms chromatic filter in the green sheet thus;
The photosensitive polymer colorful film of blueness is pasted on the show electrode;
Photosensitive polymer colorful film to blueness carries out exposure-processed and development treatment, forms chromatic filter in the blue sheet thus;
The photosensitive polymer colorful film of black pasted on whole of the element that comprises chromatic filter in the RGB sheet of all kinds;
Photosensitive polymer colorful film to black carries out exposure-processed and development treatment, forms the operation of black matrix thus.
Manufacture method according to a kind of display device of the present invention comprises the steps:
On substrate, form pixel drive elements; With
Form the show electrode that is connected with pixel drive elements;
Described method is characterised in that,
The photosensitive polymer colorful film is pasted on the show electrode; With
The photosensitive polymer colorful film is carried out exposure-processed and development treatment, form chromatic filter and black matrix in the RGB sheet of all kinds simultaneously.
Therefore, according to the display device that meets the present invention's the 1st viewpoint, after pasting the photosensitive polymer colorful film,, just can make chromatic filter in the sheet by carrying out exposure-processed and development treatment simple and easyly.
The display device that meets the present invention's the 2nd viewpoint has the relative the 1st with the 2nd substrate, is configured in liquid crystal layer between each substrate, chromatic filter in public electrode that liquid crystal layer one side of the 2nd substrate forms, the show electrode at the liquid crystal cells that liquid crystal layer one side of the 1st substrate forms, the pixel drive elements that is connected with show electrode and the sheet that is made of the photosensitive polymer colorful film in the liquid crystal layer one side formation of show electrode.
Therefore, according to the display device that meets the present invention's the 2nd viewpoint, can obtain to have the color liquid crystal display arrangement of the active matrix mode of chromatic filter in the sheet.And, after pasting the photosensitive polymer colorful film,, just can make chromatic filter in the sheet by carrying out exposure-processed and development treatment simple and easyly.
Description of drawings
Fig. 1 is the circuit block diagram of the display device of embodiment 1～3 that the present invention is specialized.
Fig. 2 is the circuit diagram of major part of the display device of embodiment 1～3.
Fig. 3 is the summary section of a part of the display device of embodiment 1.
Fig. 4 is a part of enlarged drawing of Fig. 3.
Fig. 5 is a part of summary section of manufacture method that is used to illustrate the display device of embodiment 1.
Fig. 6 is a part of summary section of manufacture method that is used to illustrate the display device of embodiment 1.
Fig. 7 is a part of summary section of manufacture method that is used to illustrate the display device of embodiment 1.
Fig. 8 is a part of summary section of the display device of embodiment 2.
Fig. 9 is a part of summary section of the display device of embodiment 3.
Figure 10 is a part of enlarged drawing of Fig. 9.
Figure 11 is a part of summary section of manufacture method that is used to illustrate the display device of embodiment 3.
Figure 12 is a part of summary section of manufacture method that is used to illustrate the display device of embodiment 3.
Figure 13 is a part of summary section of manufacture method that is used to illustrate the display device of embodiment 3.
Embodiment
The optimal morphology that is used to carry out an invention
(embodiment 1)
Below, the embodiment 1 that the present invention is specialized with reference to description of drawings.
Fig. 1 represents the structure of block diagram of the active matrix mode LCD of present embodiment.
Each sweep trace (gate wirings) G1 ... Gn, Gn+1 ... Gm and each data line (drain electrode distribution) D1 ... Dn, Dn+1 ... Dm is configured on the pixel portions (LCD panel) 101.Each gate wirings and each drain electrode distribution be quadrature respectively, and pixel 102 is arranged on this quadrature component.And each gate wirings is connected with gate drivers 103, in order to apply signal (sweep signal).In addition, each distribution that drains is connected with drain driver (data driver) 104, in order to apply data-signal (vision signal).Constitute peripheral driving circuit portion 105 by these drivers 103,104.
Usually the LCD that a certain side in each driver 103,104 and pixel portions 101 are formed on the same substrate is called driver one-piece type (driver built-in) LCD.Gate drivers 103 also is arranged on the both sides of pixel portions 101 sometimes.In addition, drain driver 104 also is arranged on the both sides of pixel portions 101 sometimes.
Fig. 2 represents to be arranged on the equivalent electrical circuit of gate wirings Gn and the pixel 102 of the quadrature component of drain electrode distribution Dn.
In the pixel 102 that constitutes like this, making gate wirings Gn is positive voltage, when positive voltage being added on the grid of TFT106, and the TFT106 conducting.So the electrostatic capacitance of liquid crystal cells LC and auxiliary capacitor CS are just charged by the data-signal that is added on the drain electrode distribution Dn.On the contrary, making gate wirings Gn is negative voltage, and when negative voltage being added on the grid of TFT106, TFT106 just ends, and at this moment, the voltage that is added on the drain electrode distribution Dn is kept by electrostatic capacitance and the auxiliary capacitor CS of liquid crystal cells LC.Like this, supply with the drain electrode distribution by wanting the data-signal that writes pixel 102, the voltage of control gate wirings just can make pixel 102 keep data-signal arbitrarily.The transmitance of liquid crystal cells LC changes according to the data-signal that this pixel 102 keeps, thus display image.
Fig. 3 represents to have a part of summary section of the pixel portions 101 of LCD chromatic filter, present embodiment in the sheet.The LCD of present embodiment adopts the infiltration type structure of using the plane multi-crystal TFT of SD (Single Drain) structure as TFT106, uses with color LCD with color LCD or direct-view as the crystal projection of one-board.Fig. 4 is illustrated near the enlarged drawing of the TFT106 of Fig. 3.In Fig. 3 and Fig. 4, omitted auxiliary capacitor CS.
Between each relative transparent insulation substrate 1,2, form the liquid crystal layer 3 of filling liquid crystal.The show electrode 4 of liquid crystal cells LC is arranged on the transparent insulation substrate 1, and the public electrode 5 of liquid crystal cells LC is arranged on the transparent insulation substrate 2.As the material of each electrode 4,5, use indium tin oxide (ITO usually; Indium Tin Oxide).On public electrode 5, form oriented film 6.On show electrode 4, order forms certain chromatic filter 8a～8C of the same colour and the oriented film 10 among passivating film 7, the RGB.That is, liquid crystal layer 3 is clipped between each oriented film 6,10.Between RGB chromatic filter 8a～8C of all kinds, form the black matrix (BM) 9 that constitutes by photomask.The thickness of this black matrix 9 is identical with the thickness of each chromatic filter 8a～8C.
On the surface of liquid crystal layer 3 one sides of transparent insulation substrate 1, form the polysilicon film 11 that constitutes the TFT active layer.On gate insulating film 12, form the gate electrode 13 that constitutes gate wirings GN.On polysilicon film 11, form drain region 14 and source region 15, between each zone 14,15, form channel region 16.Constitute TFT106 by these each zones 14～16 and gate electrode 13.
On whole of TFT106, form interlayer dielectric 17.Source region 15 is connected with source electrode 19 by the contact hole 18 that forms on interlayer dielectric 17.Drain region 14 is connected with the drain electrode 21 that constitutes drain electrode distribution Dn by the contact hole 20 that forms on interlayer dielectric 17.On each electrode 19,21 and interlayer dielectric 17 whole, form planarization insulating film 22.Source electrode 19 is connected with show electrode 4 by the contact hole 23 that forms on planarization insulating film 22.
Like this, source electrode 15 is connected by source electrode 19 with show electrode 4, is to contact for the good resistance that obtains source region 15 and show electrode 4.That is, when saving source electrode 19, the source region 15 that is made of polysilicon film 11 just directly is connected with the show electrode 4 that is made of ITO.As a result, because the heterogeneous joint of source region 15 and show electrode 4 with the energy gap that takes place to be caused by the forbidden band difference, thereby can not obtain good resistance contact.When the resistance that can not obtain source region 15 and show electrode 4 contacted, the data-signal that is added on the drain electrode distribution Dn just can not correctly write pixel 102, thereby the image quality of LCD will reduce.Therefore, by not putting the source electrode 19 that constitutes by aluminium alloy film, and source region 15 is compared with show electrode 4 direct-connected situations, certainly obtained good resistance contact.
In TFT106, source region 15, source electrode 19 are called drain region, drain electrode sometimes, and drain region 14, drain electrode 21 also are called source region, source electrode.At this moment, drain electrode distribution Dn is called the source electrode distribution, and drain driver 104 is called source electrode driver.
Below, order illustrates the manufacture method of present embodiment.
Operation 1: at first, go up the non-polysilicon film 11 (the about 500A of thickness) that mixes up of formation in transparent insulation substrate 1 (quartz glass, pyroceram).
The formation method of polysilicon film 11 has following several.
(1) directly forms the method for polysilicon film 11: use CVD (Chemical VaporDepoSition) method or PVD (PhiSical Vapor DepoSition) method.The CVD method has atmospheric pressure cvd method, decompression CVD method, plasma CVD method, ECR (Electron CyclotronReSonance) plasma CVD method and light stimulus CVD method etc.In addition, the PVD method has evaporation method, EB (Electron Beam) evaporation method, MBE (Molecular Beam Epitaxy) method and sputtering method etc.
Wherein, utilize monosilane (SiH
4) or disilane (Si
2H
6) the decompression CVD method of thermal decomposition be general method, can form first-chop polysilicon film 11.In decompression CYD method, treatment temperature is amorphous silicon under less than about 550 ℃, be polysilicon greater than about 620 ℃ the time.
In addition, also can use the monosilane that utilizes in the plasma or disilane the plasma CVD method of thermal decomposition.The treatment temperature of plasma CVD method is about 300 ℃, promotes reaction if add hydrogen, just forms amorphous silicon film.And if add inert gas (helium, neon, argon, krypton, xenon, radon), then plasma just is energized, even under identical treatment temperature, also can form polysilicon film.
(2) thus after forming amorphous silicon film, make it to take place the method that many crystallizations form polysilicon films 6: use solid phase flop-in method or melting recrystallization method.
The solid phase flop-in method, thereby exactly by amorphous silicon film being carried out about 20 hours long thermal treatment under about 600 ℃, under solid state, making it to take place the method that many crystallizations obtain polysilicon film.
The melting recrystallization method is exactly only to make the melt surface of amorphous silicon film make it to take place crystallization again and substrate temperature is remained on method below 600 ℃, and laser annealing method and RTA (Rapid ThemalAnnealing) method is arranged.The laser annealing method is to carry out the method for heating and melting on the surface of laser radiation amorphous silicon film.The RTA method is to carry out the method for heating and melting on the surface of light-illuminating amorphous silicon film.
Like this, be no more than 600 ℃,, just can use pyroceram as transparent insulation substrate if use solid phase flop-in method or melting recrystallization method that substrate temperature is remained on.Price significantly improves quartz glass along with maximization, and in addition, current realization is maximized also certain limit, so the size of substrate is restricted.Therefore, the display board size of the LCD that matches with cost is less than 2 types, as the view finder of video camera with or liquid crystal projection apparatus with being enough to have used, still just too little with the display board size as direct-view, can not use.On the other hand, common glass (pyroceram) is price about 1/10 of quartz glass, and size also without limits.Now, in the pyroceram (for example, the trade name " 7059 " of U.S. Corning Inc. system) that commercially available LCD uses, 600 ℃ the glass of heat resisting temperature of having an appointment.Therefore, require to use to form multi-crystal TFT, so that can use common glass (pyroceram) as transparent insulation substrate less than about 600 ℃ low temperature process (being called low temperature process).In addition, when in about 1000 ℃ high-temperature process, forming multi-crystal TFT,, be referred to as high-temperature technology with respect to low temperature process.
Secondly, on polysilicon film 11, form gate insulating film 12 (thickness: about 1000 ).
The formation method of gate insulating film 12 has following several.
(1) use oxidizing process to form the method for silicon oxide layer: to use high-temperature oxidation (using the dry oxidizing process of dry oxygen, the wet oxidation that uses wet oxygen, the oxidizing process in steam atmosphere), low-temperature oxidation method (oxidizing process in high-pressure steam atmosphere, the oxidizing process in the oxygen gas plasma) and anodizing etc.
(2) use coating process to form silicon oxide film, silicon nitride film, silicon oxynitride film (SiO
xN
y) method: use CVD method or PVD method.In addition, also has the method that each film is combined to form sandwich construction.
In the formation of the silicon oxide film that utilizes the CVD method, use monosilane or disilane the thermal decomposition of thermal decomposition, TEOS organic oxosilanes such as (Tetra-Ethyl-Ortho-Silicate) and halosilanes add water decomposition etc.In the formation of the silicon nitride film that utilizes the CVD method, use ammonia and dichlorosilane (SiH
2Cl
2), the thermal decomposition of ammonia and monosilane, nitrogen and ammonia etc. etc.Silicon oxynitride film has the characteristic of two kinds of films of oxide film and nitride film, can utilize the CVD method by import a spot of nitrogen oxide (N in the system that forms silicon nitride film
2O) form.
The formation method of gate insulating film 12 also has high-temperature technology and low temperature process.In high-temperature technology, can use above-mentioned high-temperature oxidation usually.On the other hand, in low temperature process, can use oxidizing process in the above-mentioned oxygen plasma or coating process etc. usually, treatment temperature is controlled at below 600 ℃.
Secondly, form gate electrode 13 (about 3000 of thickness) on gate insulating film 12, overlapping is desirable shape.As the material of gate electrode 13, can use the polysilicon that mixes up impurity, metal silicide, refractory metal monomer, other metals etc., in formation, can use CVD method or PVD method.
Then, utilize from integration technology gate electrode 13, on polysilicon film 11, form drain region 14 and source region 15 as mask.Formation method for each zone 14,15 also has high-temperature technology and low temperature process.In high-temperature technology, impurity is carried out carrying out high-temperature heat treatment, activator impurity after ion injects.In low temperature process, by irradiation phosphine gas (PH
3) or diborane (B
2H
6) and the ion shower of the mixed gas of hydrogen, special heat treatment step is not set, carry out the injection and the activation of impurity simultaneously.In low temperature process, also have behind implanting impurity ion, by carry out under less than about 600 ℃ low temperature a few hours～tens of hours thermal treatment comes the method for activator impurity.
Secondly, on whole of element, form interlayer dielectric 17 (thickness: about 2000～4000 ).As interlayer dielectric 17, can use silicon oxide film, silicon nitride film, silicon oxynitride film, silicate glass etc., its formation can be used CVD method or PVD method.In addition, also has the method that each film combination is adopted sandwich construction.For example, the structure (NSG/BPSG/NSG) that has utilization by the non-silicon oxide film that mixes up (below, be called the NSG film) BPSG (Boron-doped PhoSpho-Silicate GlaSS) film to be clipped in the middle constitutes interlayer dielectric 17, forms the back by the counter method of handling the differential spreadability that improves interlayer dielectric 17 that flows at bpsg film.
Then, utilize anisotropic etching, on interlayer dielectric 17, form each contact hole 18,20.
And, by with component exposure in hydrogen plasma, carry out the hydrogen treatment of polysilicon film 11.So-called hydrogen treatment, thereby exactly by making hydrogen atom combine, reduce defective with the crystal defect part of polysilicon, making the stable method that improves the field effect mobility of crystalline texture.Like this, just, can improve the element characteristic of TFT106.
Secondly, utilize sputtering method to form aluminium alloy film (Al-1%Si-0.5%Cu) (thickness: about 5000～10000 ) comprising on each contact hole 18,20 whole at interior element.Then, be sputtered to desirable shape, form source electrode 19 and drain electrode 21 by making this aluminium alloy film.
Making and contain 1% supersaturation silicon in the aluminium alloy film, is in order to prevent that silicon from shifting to each electrode 19,21 from polysilicon film 11.In addition, adding copper in aluminium alloy film, is the characteristic for the anti-electromigration that improves each electrode 19,21 and proof stress migration.
Secondly, on whole of element, form planarization insulating film 22 (thickness: about 1.0～2.0 μ m).As planarization insulating film 22, can use silicon oxide film, silicon nitride film, silicon oxynitride film, silicate glass film etc., its formation can be used CVD method or PVD method.In addition, also can use spin-coating glass (SOG) film, synthetic resin film (polyimide series resin film, organosilicon membrane, acryloyl group series resin film etc.).In addition, also has the method that each film combination is adopted sandwich construction.
Then, utilize anisotropic etching, on planarization insulating film 22, form contact hole 23.Secondly, utilize sputtering method to form the ITO film comprising on contact hole 23 whole at interior element.Then, be sputtered to desirable shape, form show electrode 4 (thickness: about 1000～2000 ) by making this ITO film.
Then, on whole of element, form passivating film 7.As passivating film 7, can use silicon nitride film, PSG (PhoSpho-Silicate GlaSS) film etc., its formation can be used CVD method or PVD method.
Operation 2 (referring to Fig. 5 (a)): with red photosensitive polymer colorful film (sheet resistance) 31 (thickness: about 2.0 μ m) paste on the passivating film 7.Particularly, be exactly that photosensitive polymer colorful film 31 is heated with proper temperature (for example, about 130～150 ℃), force up with roller.By hot pressing, also can obtain enough bonding forces even without bonding agent.As this red photosensitive polymer colorful film, the trade name " ト ラ Application サ-R11 " of Fuji Photo film Co., Ltd. system is arranged.
Operation 3 (referring to Fig. 5 (b)): by having the photomask 32 of the pattern corresponding with the chromatic filter 8a of R (red), photosensitive polymer colorful film 31 is exposed, make the part 31a sensitization of the photosensitive polymer colorful film 31 corresponding with chromatic filter 8a.As a result, the part 31a of the sensitization of photosensitive polymer colorful film 31 just can not be dissolved in developer solution.
Operation 4 (referring to Fig. 5 (c)):, form red chromatic filter 8a from above-mentioned part 31a by carrying out the development treatment of photosensitive polymer colorful film 31.That is,, only retain part 31a by remove the part 31a part in addition on the photosensitive polymer colorful film 31 with developing solution dissolution.Secondly, carry out baking processing (treatment temperature: 220 ℃), make red chromatic filter 8a drying.
Operation 5 (referring to Fig. 6 (a)): the same with above-mentioned operation 2～operation 4, form the chromatic filter 8B of G (green) from the photosensitive polymer colorful film of green, form the chromatic filter 8C of B (indigo plant) from the photosensitive polymer colorful film of blueness.As this green or blue photosensitive polymer colorful film, trade name " ト ラ Application サ-G11 " or " the ト ラ Application サ-B11 " of Fuji Photo film Co., Ltd. system arranged respectively.After the development treatment of the chromatic filter 8C that carries out green chromatic filter 8B and indigo plant, also carry out baking processing (treatment temperature: 220 ℃), make each chromatic filter 8B, 8C drying.
Operation 6 (referring to Fig. 6 (b)): with the photosensitive polymer colorful film 33 (thickness: about 2.0 μ m) paste on RGB the chromatic filter 8a～8c and passivating film 7 of all kinds of black.Concrete method is identical with the situation of photosensitive polymer colorful film 31.As the photosensitive polymer colorful film of this black, the trade name " ト ラ Application サ-Kt1 " of Fuji Photo film Co., Ltd. system is arranged.
Operation 7 (referring to Fig. 6 (c)): the photomask 34 of the pattern of little and bigger gap 34a than the opaque material part of the TFT106 of gate electrode 13 etc. by gap with chromatic filter 8a～8c more of all kinds than RGB, photosensitive polymer colorful film 33 is exposed, make the part 33a sensitization of the photosensitive polymer colorful film 33 corresponding with gap 34a.As a result, the part 33a of the sensitization of photosensitive polymer colorful film 33 just has been insoluble to developer solution.
Operation 8 (referring to Fig. 7 (a)): expose from the reverse side that forms the face of TFT106 in transparent insulation substrate 1, make the part 33B sensitization of the photosensitive polymer colorful film 33 between the part 33a that is clipped in RGB chromatic filter 8a～8C of all kinds and photosensitive polymer colorful film 33.At this moment, because the photosensitive polymer colorful film 33 that sticks on RGB chromatic filter 8a～8C of all kinds is difficult to exposure, so, have only part 33B to expose and sensitization.As a result, the part 33B of the sensitization of photosensitive polymer colorful film 33 just has been insoluble to developer solution.
Operation 9 (referring to Fig. 7 (b)):, form black matrix 9 from each part mentioned above 33a, 33B by carrying out the development treatment of photosensitive polymer colorful film 33.That is,, only retain each several part 33a, 33B by remove the part beyond each several part 33a, the 33B on the photosensitive polymer colorful film 33 with developing solution dissolution.Then, carry out back baking processing (treatment temperature: 240 ℃), make black matrix 9 dryings, fully fixing, also make RGB chromatic filter 8a～8c of all kinds fully fixing simultaneously.
Like this, in operation 8, utilize the back-exposure method of chromatic filter 8a～8C that RGB is of all kinds, the part 33B of the gap coupling of the part 33a of formation and each chromatic filter 8a～8c and black matrix 9 as photomask.In addition, in operation 7, utilize the face exposure method of using photomask 34,, form part 33a not exposing with the part (the opaque material part of the TFT106 of gate electrode 13 grades) that above-mentioned back-exposure method is exposed.
Yet the photosensitive polymer colorful film 33 of black is a film of using the light with the photosensitive polymer colorful film of RGB look different to carry out sensitization, is that the light (for example ultraviolet ray of 365nm wavelength) with specific wavelength exposes.Here, importantly can adopt the technology of back-exposure method.Here it is comprises ultraviolet light absorber in established chromatic filter 8a～8c.Therefore, the ultraviolet ray of 365nm wavelength only exposes to the part outside the opaque material part position of TFT106 outside the photosensitive polymer colorful film position of RGB look.But, the UVA effect of the photosensitive polymer colorful film of RGB look restricted, exceed with about 100mJ (exporting for 10 seconds) exposure with the light of 10mW, so, must expose with the photosensitive polymer colorful film 33 of the ultraviolet ray that reaches this restriction low output before to black.
Operation 10 (referring to Fig. 2): on RGB chromatic filter 8a～8c of all kinds and black matrix 9, form oriented film 10.Here, the formation temperature of oriented film 10 (about 180 ℃) is set at the heat resisting temperature that is lower than each chromatic filter 8a～8c and black matrix 9.
Secondly, utilize sputtering method on whole of transparent insulation substrate 2, to form the ITO film, thereby form public electrode 5.Then, on public electrode 5, form oriented film 6.
As oriented film 6,10, can use inclination evaporating film, polyimide series resin film, silane film of monox (SiO) etc.
Secondly, the face of each oriented film 10,6 by making each transparent insulation substrate 1,2 is relative, and liquid crystal enclosed forms liquid crystal layer 3 therebetween, has just finished the pixel portions 101 of LCD.
Yet, when using pyroceram, not only when forming polysilicon film 11 but also in the whole operations that form oriented film 10, all must use low temperature process as transparent insulation substrate 1.
As the formation method of the oriented film 10 of low temperature process, thus have with the solution of the polyimide of solubility in whole ground coating on chromatic filter and the black matrix, under the temperature below 20 ℃, make solvent evaporates obtain the method for the oriented film that constitutes by polyimide.The polyimide that uses this solvable life is during as material, compare as the raw-material situation of oriented film with the acid of use polyamides ammonium, treatment temperature is low, so, be that the LCD of chromatic filter in the sheet of 200～300 ℃ (being generally about 240 ℃) is most suitable to heat resisting temperature.But, can be used in from polyamides ammonium acidifying and synthesize the heating-up temperature of polyimide when for example the temperature below 300 ℃ is finished, if can realize for example interior chromatic filter of sheet of the heat resisting temperature more than 300 ℃, just can adopt with the acid of polyamides ammonium as raw-material oriented film.
Like this, according to present embodiment, can obtain following effect and effect.
1. on show electrode 4, form chromatic filter 8a～8c by passivating film 7, chromatic filter in the sheet is specialized.As a result, the precision that can meet with the position of each transparent insulation substrate 1,2 irrespectively improves the numerical aperture of pixel portions 101, thereby can obtain high image quality.
2. use photosensitive polymer colorful film 31 to form RGB chromatic filter 8a～8C of all kinds.In addition, use photosensitive polymer colorful film 33 to form black matrix 9.Each colorful film 31,33 compresses by heating, for can be pasted by sticky object simple and easyly.In addition, the exposure-processed of each colorful film 31,33 and development treatment can be utilized common employed technology in semi-conductive manufacturing process, so, simple and easy.Therefore, compare, can make chromatic filter 8a～8c and black matrix 9 simple and easyly with the disclosed method of above-mentioned each communique (a)～(c).
3. the formation temperature of oriented film 10 is set to such an extent that be lower than the heat resisting temperature of each chromatic filter 8a～8c and black matrix 9.Therefore, when forming oriented film 10, the shape and the characteristic of each chromatic filter 8a～8c and black matrix 9 can not change.
4. by forming planarization insulating film 22, make element surface (surface of show electrode 4, passivating film 7, chromatic filter 8a～8c, black matrix 9, oriented film 10) planarization.As a result, can obtain following effect and effect.
5. the surperficial differential mitigation of show electrode 4.As a result, the resistance of show electrode 4 can not take place in the uniform film thickness of show electrode 4.
6. because the having an even surface of oriented film 10, so, the liquid crystal molecule in the liquid crystal layer 3 evenly directed.As a result,, also can obtain the good orientation of liquid crystal layer 3, thereby can obtain high meticulous pixel portions 101 even make pixel 102 miniaturizations.
(embodiment 2)
Below, the embodiment 2 that the present invention is specialized in explanation with reference to Fig. 8.In the present embodiment, the structure member for identical with embodiment 1 is marked with identical symbol, and omits its explanation.
Fig. 8 represents to have the summary section of the part of the pixel portions 101 of the LCD of the present embodiment of chromatic filter in the sheet.In the present embodiment, be that chromatic filter 41a～41c that RGB is of all kinds and black matrix 42 use 1 photosensitive polymer colorful film 43 to form with embodiment 1 different place.Therefore, the thickness of black matrix 42 is identical with the thickness of each chromatic filter 41a～41c.
Photosensitive polymer colorful film 43 is the identical photosensitive polymer colorful films of color film that use with common photograph, by exposure, color development develop, the blix operation, form the multicolour pattern that constitutes by RGB chromatic filter 41a～41c of all kinds and black matrix 42.
Below, the chromatic filter 41a～41c that RGB is of all kinds and the formation method of black matrix 42 are described.
Operation 1: with photosensitive polymer colorful film 43 (thickness: about 6.0 μ m) paste on the passivating film 7.Its concrete method is identical with the method for photosensitive polymer colorful film 31.Perhaps, during the no hot pressing relay of photosensitive polymer colorful film 43 itself, can with adhesive applicating to passivating film 7, utilize the bonding force of this bonding agent that photosensitive polymer colorful film 43 is bonded on the passivating film 7.As this bonding agent, can use for example organic agent such as gelatin, coating method can be a spin-coating method.
Photosensitive polymer colorful film 43 is made of 3 layers of photosensitive polymer colorful film, and the film of each layer is of all kinds painted accordingly with RGB respectively.Perhaps, also can make 3 layers of photosensitive polymer colorful film each layer color for the cyan of the complementation of all kinds of RGB, magenta, yellow combination.At this moment, utilize the overlapping combination of each complementary color, just can reproduce the three primary colors of RGB.
Operation 2: at first, on 1 substrate, by with 3 looks and the corresponding photomask of black of RGB, photosensitive polymer colorful film 43 is exposed, carry out development treatment then, form RGB chromatic filter 41a～41c of all kinds and black matrix 42 simultaneously.
Like this, according to present embodiment, except with embodiment 1 above-mentioned 1., 3.～6. the identical effect and effect, can also obtain following effect and effect.
1. can form RGB chromatic filter 41a～41c of all kinds and black matrix 42 than embodiment 1 more simple and easyly.
2. exposure-processed can be finished for 1 time, so, can prevent the position deviation of chromatic filter 41a～41c that RGB is of all kinds.
(embodiment 3)
Below, the embodiment 3 that the present invention is specialized with reference to description of drawings.In the present embodiment, the structure member for identical with embodiment 1 is marked with identical symbol, and omits its explanation.
Fig. 9 represents to have the summary section of the part of the pixel portions 101 of the LCD of the present embodiment of chromatic filter in the sheet.Near the TFT106 in Figure 10 presentation graphs 9 enlarged drawing.
In the present embodiment, the place different with Fig. 3 and embodiment shown in Figure 41 be following some.
(1) omitted planarization insulating film 7.
(2) utilize RGB chromatic filter 51a～51c of all kinds or black matrix 52, make the differential realization planarization of the element surface that takes place owing to above-mentioned (1).That is, utilize RGB chromatic filter 51a～51c of all kinds, make the realization planarization that is uneven on the surface of show electrode 4, utilize black matrix 52 to make the differential realization planarization on the surface of part (each electrode 19,21, interlayer dielectric 17) outside the show electrode 4.The thickness of each chromatic filter 51a～51c of the Film Thickness Ratio of black matrix 52 is thin.
Below, order illustrates the manufacture method of present embodiment.
Operation 1: identical with the operation 1 of embodiment 1.
Operation 2 (referring to Figure 11 (a)): with photosensitive polymer colorful film (sheet resistance) 53 (thickness: about 2.0 μ m) paste on the passivating film 7 of redness.Concrete method is identical with the method for photosensitive polymer colorful film 31.
Operation 3 (referring to Figure 11 (b)): by having the photomask 32 of the pattern corresponding with the chromatic filter 51a of R (redness), photosensitive polymer colorful film 53 is exposed, make the part 53a sensitization of the photosensitive polymer colorful film 53 corresponding with chromatic filter 51a.
Operation 4 (referring to Figure 11 (C)):, form red chromatic filter 51a from above-mentioned part 53a by carrying out the development treatment of photosensitive polymer colorful film 53.
Operation 5 (referring to Figure 12 (a)): the same with above-mentioned operation 2～operation 4, form green chromatic filter 51B from the photosensitive polymer colorful film of green, form blue chromatic filter 51C from the photosensitive polymer colorful film of blueness.
Operation 6 (referring to Figure 12 (b)): with the photosensitive polymer colorful film 54 (thickness: about 1.0 μ m) paste on RGB the chromatic filter 51a～51c and passivating film 7 of all kinds of black.Concrete method is identical with the method for photosensitive polymer colorful film 31.
Operation 7 (referring to Figure 12 (c)): the photomask 34 of the pattern of little and bigger gap 34a than the opaque material part of the TFT106 of gate electrode 13 etc. by gap with chromatic filter 51a～51c more of all kinds than RGB, photosensitive polymer colorful film 54 is exposed, make the part 54a sensitization of the photosensitive polymer colorful film 54 corresponding with gap 34a.
Operation 8 (referring to Figure 13 (a)): the reverse side that forms the face of TFT106 from transparent insulation substrate 1 exposes, and makes the part 54B sensitization of the photosensitive polymer colorful film 54 between the part 54a that is clipped in RGB chromatic filter 51a～51c of all kinds and photosensitive polymer colorful film 54.At this moment, because the photosensitive polymer colorful film 54 that sticks on RGB chromatic filter 51a～51c of all kinds is difficult to exposure, so just part 54B exposes and sensitization.
Operation 9 (referring to Figure 13 (b)):, form black matrix 52 from each part mentioned above 54a, 54b by carrying out the development treatment of photosensitive polymer colorful film 54.
Operation 10 (referring to Fig. 9): on RGB chromatic filter 51a～51c of all kinds and black matrix 52, form oriented film 10.Here, the formation temperature of oriented film 10 is set to such an extent that be lower than the heat resisting temperature of each chromatic filter 51a～51c and black matrix 52.After this operation 10 of operation and embodiment 1 is identical.
Like this, according to present embodiment, can obtain 1. above-mentioned～3. identical effect and effect with embodiment 1.
In addition, in the present embodiment, the thickness of the photosensitive polymer colorful film 53 that the Film Thickness Ratio RGB of the photosensitive polymer colorful film 54 of black is of all kinds is thin.Therefore, utilize RGB chromatic filter 51a～51c of all kinds or black matrix 52, can make the surface of oriented film 10 realize planarization.That is, the height of the part (each electrode 19,21, interlayer dielectric 17) beyond the aspect ratio show electrode 4 of the show electrode 4 that forms of RGB chromatic filter 51a of all kinds～51c is low.Therefore, to be used to form the thickness of photosensitive polymer colorful film 53 of each chromatic filter 51a～51c thin if be used in the Film Thickness Ratio of the photosensitive polymer colorful film 54 that forms black matrix 52, just can eliminate surface differential of each chromatic filter 53,54.As a result, just can obtain above-mentioned 6. identical effect and effect with embodiment 1.
Here, several embodiments of the present invention only have been described, still apparent, under the condition that does not break away from the subject or scope of the present invention, can the present invention be specialized by other various ways.Particularly being interpreted as the present invention can implement by following form.
(1) with TFT106 as not being to adopt the SD structure but adopt LDD (Lightly DopedDrain) structure or double-grid structure.
(2) impurity is doped in the channel region 16 of TFT106 the threshold voltage (Vth) of control TFT106.Being among the TFT106 of active layer with polysilicon film 11 with the formation of solid phase flop-in method, in the n channel transistor, the tendency of the oriented reduction direction skew of threshold voltage, in p channel transistor, the tendency of the direction of the oriented enhancing of threshold voltage skew.When particularly carrying out hydrogen treatment, this tendency is more remarkable.In order to suppress the skew of threshold voltage, impurity can be doped in the channel region 16.
(3) auxiliary capacitor CS is set.
(4) TFT106 can be replaced into and not be plane but the TFT of other structures such as antiplane type, staggered, reciprocal cross shift.
(5) TFT106 can be replaced into and not be multi-crystal TFT but non-crystalline silicon tft.
(6) utilizing is not other conductive materials formation source electrode 19 and drain electrodes 21 of aluminium alloy.As this conductive material, have refractory metal simple substance film, high melting point metal compound, metal silicide, mix up polysilicon etc.
(7) be not only applicable to the active matrix mode LCD as the transistor-type of pixel drive elements use, and be applicable to transistor as the transistor-type of pixel drive elements use and the active matrix mode LCD of diode-type with TFT.For the pixel drive elements of diode-type, metal-insulating body-metal (MIM), ZnO (zinc paste) voltage dependent resistor (VDR), metal-semiconductor (MSI), back to back diode (BTB), annular transistor (RD) etc. are arranged.
(8) be applicable to the LCD that adopts reflection type structure.
(9) save passivating film 7, on show electrode 4, directly form chromatic filter 8a～8c, 41a～41c, 51a～51c.
Above-mentioned various forms and each embodiment should consider as example, and the detailed item that the invention is not restricted to here to be put down in writing can be carried out accommodation in appended claim scope.
Claims (13)
1. a display device has the 1st and the 2nd relative substrate (1,2), be configured in each substrate (1,2) liquid crystal layer between (3), the 2nd substrate (2) in liquid crystal layer (3) one sides is gone up the public electrode (5) that forms, go up the show electrode (4) of the liquid crystal cells (LC) that forms at the 1st substrate (1) of liquid crystal layer (3) one sides, the pixel drive elements (106) that is connected with show electrode (4), the show electrode (4) of liquid crystal layer (3) one sides go up form by photosensitive polymer colorful film (31,43,53) chromatic filter (8a～8c in the sheet of Gou Chenging, 41a～41c, 51a～51c).
2. according to the described display device of claim 1, it is characterized in that described pixel drive elements (106) is transistor or diode.
3. according to the described display device of claim 1, it is characterized in that described pixel drive elements (106) is from the thin film transistor (TFT) by a kind of structure of selecting plane, antiplane type, staggered, the group that the reciprocal cross shift constitutes.
4. the manufacture method of a display device may further comprise the steps:
Go up formation pixel drive elements (106) at substrate (1); With
Form the show electrode (4) that is connected with pixel drive elements (106);
Described method is characterised in that,
Photosensitive polymer colorful film (31,43,53) is pasted on the show electrode (4); With
Photosensitive polymer colorful film (31,43,53) is carried out exposure-processed and development treatment, form chromatic filter in the sheet (8a～8c, 41a～41c, 51a～51c) thus.
5. according to the manufacture method of the described display device of claim 4, it is characterized in that, be included in and form show electrode (4) is gone up formation planarization insulating film (22) before at substrate (1) step.
6. according to the manufacture method of the described display device of claim 4, it is characterized in that, (8a～8c, 41a～41c, 51a～51c) go up the step that forms oriented film (10), and the formation temperature of this oriented film fixed as to be lower than the heat resisting temperature of the interior chromatic filter of sheet with ing to be included in chromatic filter in the sheet.
7. the manufacture method of a display device comprises:
Go up formation pixel drive elements (106) at substrate (1);
Form the show electrode (4) that is connected with pixel drive elements (106);
The photosensitive polymer colorful film (31,53) of redness is pasted on the show electrode (4);
Photosensitive polymer colorful film (31,53) to redness carries out exposure-processed and development treatment, forms chromatic filter (8a, 51a) in the red sheet thus;
The photosensitive polymer colorful film (31,53) of green is pasted on the show electrode (4);
Photosensitive polymer colorful film (31,53) to green carries out exposure-processed and development treatment, forms chromatic filter (8b, 51b) in the green sheet thus;
The photosensitive polymer colorful film (31,53) of blueness is pasted on the show electrode (4);
Photosensitive polymer colorful film (31,53) to blueness carries out exposure-processed and development treatment, forms chromatic filter (8c, 51c) in the blue sheet thus;
The photosensitive polymer colorful film (33,54) of black pasted comprise chromatic filter in the RGB sheet of all kinds (on whole of the element of 8a～8c, 51a～51c);
Macromolecule colorful film (33,54) is given birth in the sensitization of black carry out exposure-processed and development treatment, form the operation of black matrix (9,52) thus.
8. by the manufacture method of the described display device of claim 7, it is characterized in that, the exposure-processed of the photosensitive polymer colorful film (33,54) of described black is comprised the steps:
(photomask (34) of the pattern in the gap (34a) that the gap of 8a～8c, 51a～51c) is little exposes from a side of this colorful film to the photosensitive polymer colorful film (33,54) of black than chromatic filter in the RGB sheet of all kinds by having; With
(8a～8c, 51a～51c) are as photomask, carry out back-exposure from the reverse side of substrate (1) with the photosensitive polymer colorful film (33,54) of black for chromatic filter in the sheet that RGB is of all kinds.
9. according to the manufacture method of the described display device of claim 7, it is characterized in that, the exposure-processed of the photosensitive polymer colorful film (33,54) of described black is comprised the steps:
(photomask (34) of the pattern in the gap (34a) that the gap of 8a～8c, 51a～51c) is little and bigger than the opaque material part of pixel drive elements exposes from a side of this colorful film photosensitive polymer colorful film (33,54) to black than chromatic filter in the RGB sheet of all kinds by having; With
(8a～8c, 51a～51c) as photomask carry out back-exposure from the reverse side of substrate (1) with the photosensitive polymer colorful film (33,54) of black to chromatic filter in the sheet that RGB is of all kinds.
10. according to the manufacture method of the described display device of claim 7, it is characterized in that, be included in and form show electrode (4) is gone up formation planarization insulating film (22) before at substrate (1) step.
11. the manufacture method according to the described display device of claim 7 is characterized in that, (thickness of 51a～51c) is thin, and the surface of chromatic filter is flattened in black matrix and each sheet for chromatic filter in the Film Thickness Ratio RGB of described black matrix (52) sheet of all kinds.
12. the manufacture method of a display device comprises the steps:
Go up formation pixel drive elements (106) at substrate (1); With
Form the show electrode (4) that is connected with pixel drive elements (106);
Described method is characterised in that,
Photosensitive polymer colorful film (43) is pasted on the show electrode (4); With
Macromolecule colorful film (43) is given birth in sensitization carry out exposure-processed and development treatment, form chromatic filter in the RGB sheet of all kinds (41a～41c) and black matrix (42) simultaneously.
13. the manufacture method by the described display device of claim 12 is characterized in that, is included in to form show electrode (4) is gone up formation planarization insulating film (22) before at substrate (1) step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB951980157A CN1143159C (en) | 1995-11-29 | 1995-11-29 | Display and method of producing the display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB951980157A CN1143159C (en) | 1995-11-29 | 1995-11-29 | Display and method of producing the display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1209883A CN1209883A (en) | 1999-03-03 |
| CN1143159C true CN1143159C (en) | 2004-03-24 |
Family
ID=5083501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB951980157A Expired - Fee Related CN1143159C (en) | 1995-11-29 | 1995-11-29 | Display and method of producing the display |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1143159C (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1195243C (en) | 1999-09-30 | 2005-03-30 | 三星电子株式会社 | Film transistor array panel for liquid crystal display and its producing method |
| US6559594B2 (en) | 2000-02-03 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| CN100431139C (en) * | 2006-11-10 | 2008-11-05 | 友达光电股份有限公司 | Method for manufacturing thin film transistor array substrate |
| CN101576666B (en) * | 2008-05-05 | 2012-12-26 | 奇美电子股份有限公司 | Light sensing device and display equipped with same |
| KR20130032743A (en) * | 2011-09-23 | 2013-04-02 | 삼성디스플레이 주식회사 | Liquid crystal display |
| TWI596748B (en) * | 2016-08-15 | 2017-08-21 | 財團法人工業技術研究院 | Display device |
| JP2019102664A (en) * | 2017-12-04 | 2019-06-24 | 株式会社ブイ・テクノロジー | Method for manufacturing led display panel |
| CN112639542B (en) * | 2018-09-06 | 2023-06-20 | 东丽株式会社 | Color conversion material, color conversion member, light source unit, display, lighting device, color conversion substrate, and ink |
| CN112997235B (en) * | 2018-12-06 | 2023-09-05 | 株式会社半导体能源研究所 | Display device and method for manufacturing display device |
-
1995
- 1995-11-29 CN CNB951980157A patent/CN1143159C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1209883A (en) | 1999-03-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100297599B1 (en) | Display device and manufacturing method | |
| CN1232869C (en) | Electrooptical device and electronic instrument | |
| CN1214281C (en) | Substrate for liquid crystal device, liquid crystal device, and projection display device | |
| CN1270389C (en) | Thin film transistor and manufacturing method thereof | |
| US5721601A (en) | Display units having two insolating films and a planarizing film and process for producing the same | |
| CN1161646C (en) | Active Matrix Displays and Electro-Optic Components | |
| CN1209671C (en) | Liquid crystal display device | |
| CN1222815C (en) | Semipermeability reflecting liquid crystal device and electronic equipment using it | |
| CN1276468C (en) | Semiconductor device and manufacturing method thereof | |
| CN1291363C (en) | Display device using bidirectional two-terminal element and method of manufacturing display device | |
| CN1204441C (en) | Electrooptical device, mfg. method thereof, and projection display device and electronic device | |
| CN1515947A (en) | Liquid crystal panel and projection device | |
| CN1295343A (en) | Electrooptical device, its manufacture and electronic machine | |
| CN1276291C (en) | Photoelectric device, electronic device, and method for manufacturing photo electric device | |
| CN1479148A (en) | Electro-optic device, manufacturing method thereof, and electronic device | |
| CN1238555A (en) | Semiconductor device and method for forming the same | |
| CN1683979A (en) | Array substrate of liquid crystal display and fabrication method thereof | |
| CN1143159C (en) | Display and method of producing the display | |
| CN2567606Y (en) | Electro-optical device | |
| US20070238217A1 (en) | Manufacturing Method for a Liquid Crystal Display | |
| CN1215361C (en) | Liquid crystal display and manufacturing method thereof | |
| CN1175308C (en) | Reflective liquid crystal display element and image display device using the same | |
| CN1300822C (en) | Manfacturing method for electro-optical base plate, electro-optical device and electro-optical device | |
| CN1208673C (en) | Liquid crystal display device | |
| CN1760738A (en) | Liquid crystal display device and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040324 Termination date: 20131129 |