CN114242817A - Mg-doped enhanced transition metal sulfide-based visible light detector and preparation method thereof - Google Patents
Mg-doped enhanced transition metal sulfide-based visible light detector and preparation method thereof Download PDFInfo
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Abstract
本发明属于可见光探测器的技术领域，公开了一种Mg掺杂增强过渡金属硫化物基可见光探测器及其制备方法。所述可见光探测器包括从下至上依次设置的Si衬底层、InGaN层、Mg掺杂的过渡金属硫化物层和电极层。Mg掺杂的过渡金属硫化物层部分覆盖InGaN层。本发明还公开了可见光探测器的制备方法。本发明在InGaN表面部分沉积Mg金属层，利用化学气相沉积制备Mg掺杂TMDs层，引入大量的受主能级，实现了TMDs的p型掺杂，调控了载流子浓度。调控后的载流子优化了材料与电极间势垒高度，降低了暗电流，增强了整流比，提升了器件的响应速度，对于实现高性能、高灵敏的可见光通信用光电探测器具有重要意义。
The invention belongs to the technical field of visible light detectors, and discloses a Mg-doped enhanced transition metal sulfide-based visible light detector and a preparation method thereof. The visible light detector includes a Si substrate layer, an InGaN layer, a Mg-doped transition metal sulfide layer and an electrode layer, which are sequentially arranged from bottom to top. The Mg-doped transition metal sulfide layer partially covers the InGaN layer. The invention also discloses a preparation method of the visible light detector. In the present invention, a Mg metal layer is partially deposited on the surface of InGaN, a Mg-doped TMDs layer is prepared by chemical vapor deposition, a large number of acceptor energy levels are introduced, the p-type doping of the TMDs is realized, and the carrier concentration is regulated. The modulated carriers optimize the height of the barrier between the material and the electrode, reduce the dark current, enhance the rectification ratio, and improve the response speed of the device, which is of great significance for the realization of high-performance and highly sensitive photodetectors for visible light communication. .
Description
Technical Field
The invention belongs to the field of photoelectric detectors for visible light communication, and particularly relates to an Mg-doped enhanced transition metal sulfide (TMDS) -based visible light detector and a preparation method thereof.
Background
In recent years, with the rapid development of solid-state lighting, the visible light communication technology has also advanced significantly. The visible light communication is a wireless light communication technology based on a white light emitting diode technology, can simultaneously realize two functions of illumination and high-speed data transmission, has the characteristics of high signal density coverage, high confidentiality and safety, electromagnetic interference resistance, wide frequency spectrum range and the like, and can realize high-speed, stable and safe communication transmission. As an unlimited white space spectrum area, the signal has no interference with the traditional radio wave, and the frequency spectrum of the next generation wide communication is developed.
The transition metal sulfide is a two-dimensional Van der Waals semiconductor material, has the characteristics of high carrier mobility, high thermal stability, good chemical stability, adjustable forbidden bandwidth along with the number of layers and the like, can realize the adjustable forbidden bandwidth of 1.4-2.0eV, and correspondingly realizes visible light detection with the wavelength of 620-950 nm. In recent years, the size of the traditional Si-based detector is continuously reduced, the density of the transistor is exponentially increased, and the short channel effect of the transistor limits the further improvement of the performance of the transistor. Compared with a Si-based detector, the two-dimensional detector has the advantages of small volume, easiness in carrying and integration, high breakdown electric field and the like, and further development of the visible light detector is promoted.
The existing transition metal sulfide shows natural n-type electronic characteristics, and a strong heterojunction built-in electric field is difficult to form by the traditional III-V family materials. This n-type electronic characteristic is difficult to be changed by the adjustment and control of the preparation process because the S vacancy is difficult to be eliminated. Thus, p-type doping of transition metal sulfides is a difficult problem.
According to the invention, the doped TMDs and the InGaN semiconductor material are combined to prepare the Van der Waals heterogeneous p-n junction, so that the performance of the device is further improved.
Disclosure of Invention
In order to overcome the defects and shortcomings of the prior art, the invention aims to provide an Mg-doped enhanced transition metal sulfide-based visible light detector and a preparation method thereof. The invention combines Mg-doped TMDs (transition metal sulfides) and InGaN semiconductor materials to prepare the Van der Waals heterogeneous p-n junction, thereby improving the performance of the device. The method is simple and easy to operate.
The purpose of the invention is realized by the following technical scheme:
an Mg-doped enhanced transition metal sulfide (TMDS) -based visible light detector comprises a Si substrate layer, an InGaN epitaxial layer (InGaN layer), an Mg-doped transition metal sulfide (TMDS) layer and an electrode layer which are sequentially arranged from bottom to top. The electrode layers are a first electrode layer and a second electrode layer; the first electrode layer is a Ti/Au layer, and the second electrode layer is a Ti/Au layer.
The Mg-doped transition metal sulfide layer partially covers the InGaN epitaxial layer, and a table top is formed on the upper surface of the InGaN epitaxial layer.
And a first electrode layer is arranged on the table board of the InGaN epitaxial layer, and the electrode layer is not in contact with the Mg-doped transition metal sulfide layer. The Ti layer in the first electrode layer is arranged on the table top of the InGaN epitaxial layer. An Au layer is disposed on the Ti layer.
And a second electrode layer is arranged on the Mg-doped transition metal sulfide layer. The second electrode layer partially covers the Mg-doped transition metal sulfide layer. The Ti layer in the second electrode layer is disposed on the Mg-doped transition metal sulfide layer. An Au layer is disposed on the Ti layer.
The transition metal sulfide is also called transition metal chalcogenide, and has the chemical formula MX2M is a transition metal element (e.g., molybdenum, tungsten, niobium, rhenium, titanium), and X is a chalcogen element (e.g., sulfur, selenium, tellurium).
The preparation method of the Mg-doped enhanced transition metal sulfide (TMDS) -based visible light detector comprises the following steps:
1) preparing a Mg-doped transition metal sulfide (TMDS) layer on the Si-based InGaN epitaxial wafer by a chemical vapor deposition method, and annealing;
2) electrode layers are prepared on the annealed Mg doped Transition Metal Sulfide (TMDs) layer and on the InGaN layer not covered by the Mg doped Transition Metal Sulfide (TMDs) layer.
The preparation method comprises the following specific steps:
1) spin-coating a positive photoresist on a Si-based InGaN epitaxial wafer, and photoetching to form an evaporation area of an Mg layer, wherein the evaporation area is positioned at one end of the upper surface of the epitaxial wafer;
2) evaporating a layer of metal Mg in an evaporation area by adopting a molecular beam evaporation method, and stripping unexposed photoresist to obtain an epitaxial wafer device containing a Mg layer;
3) preparing an epitaxial Mg-doped TMDS layer on an epitaxial wafer device containing an Mg layer by using a chemical vapor deposition method and taking a transition metal oxide and a chalcogenide source as precursors, and annealing to obtain a TMDS/InGaN layer-doped device; the Mg-doped TMDS layer in the device partially covers the InGaN layer;
4) spin-coating photoresist on the device with the doped TMDS/InGaN layer, and photoetching to obtain an electrode deposition area with a required shape; the electrode deposition area is positioned on the Mg-doped TMDS layer and the InGaN layer which is not covered by the Mg-doped TMDS layer;
5) and evaporating a metal electrode in the deposition area by adopting a molecular beam evaporation method, and stripping unexposed photoresist to obtain the Mg-doped enhanced transition metal sulfide (TMDS) -based visible light detector.
The transition metal oxide in the step 3) is an oxide of molybdenum, tungsten, niobium, rhenium and titanium, such as: molybdenum trioxide, tungsten trioxide; the chalcogenide source is sulfur, selenium and tellurium powder;
the chemical vapor deposition is carried out under an argon atmosphere at standard atmospheric pressure.
The chemical vapor deposition equipment in the step 3) is a tubular furnace; conditions of chemical vapor deposition: the growth environment is 700-780Torr argon atmosphere; the transition metal oxide and the sulfur group source are heated at different temperatures, wherein the heating temperatures are respectively 650-750 ℃ and 100-140 ℃; the growth time is 2-6 min;
the thickness of the Mg-doped TMDS layer is 1-100 nm; the Mg doping concentration in the Mg-doped TMDS layer is 2 multiplied by 1018～6×1018cm-3。
Step 3) annealing treatment: the temperature is 600-750 ℃, and the annealing time is 0.5-2 h.
(during the preparation there is a large amount of Mg lost, evaporated)
And 5) the metal electrode is a Ti/Au electrode, and the Ti layer is arranged on the Mg-doped transition metal sulfide layer. An Au layer is disposed on the Ti layer.
The Si-based InGaN substrate in the step 1) is an InGaN single crystal or epitaxial wafer, the thickness of the Si layer is 300-400 microns, and the thickness of the InGaN epitaxial wafer is 1-3 microns.
And 2) the thickness of the Mg layer is 10-100 nm.
The thickness of the deposited Ti and gold electrodes in the step 5) is 30-60nm/60-150nm respectively.
The Mg doped p-type TMDS layer and the intrinsic n-type InGaN substrate layer form a p-n heterojunction.
The Mg-doped TMDs layer in the device of the invention introduces a large number of acceptor levels, realizes p-type doping of TMDs, and regulates and controls the carrier concentration. The regulated and controlled carrier optimizes the barrier height between the material and the electrode, reduces the dark current, enhances the rectification ratio, improves the response speed of the device, and has important significance for realizing a high-performance and high-sensitivity photoelectric detector for visible light communication.
Compared with the prior art, the invention has the following advantages:
the invention utilizes molecular beam evaporation equipment to selectively evaporate an Mg layer, realizes in-situ doping in the growth process to form a deep acceptor level, regulates and controls the type and concentration of carriers, and realizes the P-type TMDs material. The 2D/3D heterojunction is constructed by combining with an n-type InGaN material, so that the device performance is further improved. The method has the advantages of high in-situ doping efficiency and simple process, and has important significance for realizing the photoelectric detector device for high-sensitivity visible light communication.
Drawings
FIG. 1 is a schematic view of a Mg-doped enhanced TMDS-based visible light detector according to the present invention; 1-substrate, 2-InGaN layer, 3-Mg doped TMDS layer, 4-electrode layer;
FIG. 2 is a flow chart of the Mg-doped enhanced TMDS-based visible light detector of the present invention; 1-substrate, 2-InGaN layer, 3-Mg doped TMDS layer, 4-electrode layer; a 30-Mg layer;
FIG. 3 is a Raman characterization of the epitaxially grown Mg-doped TMDS film on InGaN in accordance with example 1 of the present invention;
FIG. 4 is a current-voltage curve (365nm) of the Mg-doped enhanced TMDS-based visible light detector prepared in example 1 of the present invention under different UV light illumination intensities.
Detailed Description
The following figures and examples further illustrate the future practice of the invention, but the practice and protection of the invention is not limited thereto. It is noted that the following descriptions, unless otherwise specified, are intended to be implemented or understood by persons skilled in the art with reference to the prior art.
The schematic structural diagram of the Mg-doped enhanced TMDS-based visible light detector is shown in FIG. 1, and the Mg-doped enhanced TMDS-based visible light detector comprises a Si substrate layer 1, an InGaN epitaxial layer 2, a Mg-doped transition metal sulfide (TMDS) layer 3 and an electrode layer 4 which are sequentially arranged from bottom to top. The electrode layer 4 is a first electrode layer and a second electrode layer; the first electrode layer is a Ti/Au layer, and the second electrode layer is a Ti/Au layer.
The Mg doped transition metal sulfide layer 3 partially covers the InGaN epitaxial layer 2, and a mesa is formed on the upper surface of the InGaN epitaxial layer.
And a first electrode layer is arranged on the table top of the InGaN epitaxial layer 2, and the electrode layer is not in contact with the Mg-doped transition metal sulfide layer. The Ti layer in the first electrode layer is arranged on the table top of the InGaN epitaxial layer. An Au layer is disposed on the Ti layer.
And a second electrode layer is arranged on the Mg-doped transition metal sulfide layer 3. The second electrode layer partially covers the Mg-doped transition metal sulfide layer. The Ti layer in the second electrode layer is disposed on the Mg-doped transition metal sulfide layer. An Au layer is disposed on the Ti layer.
FIG. 2 is a flow chart of the Mg-doped enhanced TMDS-based visible light detector of the present invention; 1-substrate, 2-InGaN layer, 3-Mg doped TMDS layer, 4-electrode layer; 30-Mg layer.
Example 1
The embodiment provides a Mg-doped enhanced transition metal sulfide (TMDS) -based visible light detector which comprises a Si substrate layer, an InGaN layer, a Mg-doped TMDS layer, a Ti electrode layer and a gold electrode layer from bottom to top in sequence.
The embodiment also provides a preparation method of the Mg-doped enhanced transition metal sulfide (TMDS) -based visible light detector, which comprises the following steps:
1) spin-coating photoresist on the Si-based InGaN epitaxial wafer, and photoetching to obtain a device in an Mg layer evaporation area (the Mg evaporation area is positioned at one end of the upper surface of the InGaN epitaxial wafer and partially covers InGaN);
2) evaporating a layer of metal Mg on the evaporation area in the step 1) by using molecular beam evaporation equipment, wherein the thickness of the metal Mg is 10nm, and obtaining an epitaxial wafer device containing a metal Mg layer;
3) stripping and cleaning the unexposed photoresist of the device containing the metal Mg layer in the step (2) to obtain a stripped Mg layer device;
4) and (3) for the Mg layer device of the step (3), adopting argon to clean the air in the tube for multiple times, respectively heating to 730 ℃ and 130 ℃ in the argon atmosphere of standard atmospheric pressure by taking molybdenum oxide and sulfur powder as precursors, and carrying out epitaxial growth for 4min to prepare epitaxial Mg-doped MoS2Layer to obtain Mg doped MoS2InGaN layer device with Mg doping concentration of 2 × 1018～6×1018cm-3(ii) a Mg-doped MoS2Partially covering the InGaN layer, Mg doping MoS2The layer is positioned at the other end of the upper surface of the InGaN layer;
5) annealing the TMDS/InGaN layer doped device in the step 4) in a sulfur atmosphere at the annealing temperature of 600 ℃ for 2h to obtain an annealed TMDS/InGaN layer doped device;
6) for the Mg doped MoS in the device with the doped MoS2/InGaN layer in the step 5)2Layer and not Mg-doped MoS2Spin-coating photoresist on the InGaN layer covered by the layer, and photoetching to obtain an area in a required electrode shape;
7) evaporating Ti/Au electrodes on the device containing the electrode shape in the step 6) by using molecular beam evaporation equipment, wherein the thicknesses of the Ti/Au electrodes are 30/60nm respectively, so as to obtain a device containing an electrode layer;
8) stripping and cleaning the unexposed photoresist of the device containing the electrode layer in the step (7) to obtain the Mg-doped enhanced MoS2/InGaN visible light detector device.
FIG. 3 is a Raman characterization of the epitaxially grown Mg-doped TMDS film on InGaN in accordance with example 1 of the present invention;
FIG. 4 is a current-voltage curve (365nm) of the Mg-doped enhanced TMDS-based visible light detector prepared in example 1 of the present invention under different UV light illumination intensities.
Example 2
The embodiment provides a Mg-doped enhanced transition metal sulfide (TMDS) -based visible light detector which comprises a Si substrate layer, an InGaN layer, a Mg-doped TMDS layer, a Ti electrode layer and a gold electrode layer from bottom to top in sequence.
The embodiment also provides a preparation method of the Mg-doped enhanced transition metal sulfide (TMDS) -based visible light detector, which comprises the following steps:
1) spin-coating photoresist on the Si-based InGaN epitaxial wafer, and photoetching to form an Mg layer evaporation area; the evaporation region is positioned at one end of the upper surface of the InGaN layer;
2) evaporating a layer of metal Mg on the evaporation area in the step 1) by using molecular beam evaporation equipment, wherein the thickness of the metal Mg is 20nm, and obtaining an epitaxial wafer device containing a metal Mg layer;
3) stripping and cleaning the unexposed photoresist of the device containing the metal Mg layer in the step 2) to obtain a stripped Mg layer device;
4) for the Mg layer device of step 3), adopting argon to clean the air in the tube for many times, respectively heating tungsten oxide and sulfur powder as precursors to 750 ℃ and 130 ℃ in the argon atmosphere of standard atmospheric pressure, and carrying out epitaxial growth for 3min to prepare epitaxial Mg-doped WS2Layer to obtain doped WS2InGaN layer device with Mg doping concentration of 2 × 1018～6×1018cm-3(ii) a Mg doped WS2The layer partially covers the InGaN layer;
5) for the doped WS of step 4)2Annealing the InGaN layer device in a sulfur atmosphere at the annealing temperature of 700 ℃ for 1h to obtain an annealed TMDS/InGaN doped layer device;
6) for the doped WS of step (5)2Spin-coating photoresist on the InGaN layer device, and photoetching to obtain a device with an electrode shape;
7) evaporating Ti/Au electrodes on the device containing the electrode shape in the step 6) by using molecular beam evaporation equipment, wherein the thicknesses of the Ti/Au electrodes are 40/80nm respectively, so as to obtain a device containing an electrode layer;
8) stripping and cleaning the unexposed photoresist of the device containing the electrode layer in the step 7) to obtain the Mg-doped enhanced WS2/InGaN visible light detector device.
Example 3
The embodiment provides a Mg-doped enhanced transition metal sulfide (TMDS) -based visible light detector, which comprises a Si substrate layer, an InGaN layer and a Mg-doped MoS layer from bottom to top in sequence2A layer, a Ti electrode layer and an Au electrode layer.
The embodiment also provides a preparation method of the Mg-doped enhanced transition metal sulfide (TMDS) -based visible light detector, which comprises the following steps:
1) spin-coating photoresist on the Si-based InGaN epitaxial wafer, and photoetching to obtain a device in an Mg layer evaporation area;
2) evaporating a layer of metal Mg on the device in the step 1) by using molecular beam evaporation equipment, wherein the thickness of the metal Mg is 50nm, and obtaining an epitaxial wafer device containing a metal Mg layer;
3) stripping and cleaning the unexposed photoresist of the device containing the metal Mg layer in the step 2) to obtain a stripped Mg layer device;
4) for the Mg layer device of the step 3), the single-temperature-zone chemical vapor deposition equipment adopts argon to clean the air in the tube for multiple times, molybdenum oxide and sulfur powder are taken as precursors and are respectively heated to 750 ℃ and 140 ℃ under the argon atmosphere of standard atmospheric pressure, and epitaxial growth is carried out for 4min to prepare epitaxial Mg-doped MoS2Layer to obtain Mg doped MoS2InGaN layer device with Mg doping concentration of 2 × 1018～6×1018cm-3(ii) a Mg-doped MoS2The layer partially covers the InGaN layer;
5) MoS is doped with Mg in the step 4)2Annealing the InGaN layer device in a sulfur atmosphere at 750 ℃ for 0.5h to obtain annealed doped MoS2An InGaN layer device;
6) for the doped MoS in the step 5)2Spin-coating photoresist on the InGaN layer device, and photoetching to obtain a device with an electrode shape;
7) evaporating Ti/Au electrodes on the device containing the electrode shape in the step 6) by using molecular beam evaporation equipment, wherein the thicknesses of the Ti/Au electrodes are 40/100nm respectively, so as to obtain a device containing an electrode layer;
8) and (3) stripping and cleaning the unexposed photoresist of the device containing the electrode layer in the step 7) to obtain the Mg-doped enhanced TMDS-based visible light detector device.
Claims (10)
1. An Mg-doped enhanced transition metal sulfide-based visible light detector is characterized in that: the metal-clad multilayer thin film transistor comprises a Si substrate layer, an InGaN layer, a Mg-doped transition metal sulfide layer and an electrode layer which are sequentially arranged from bottom to top; the electrode layers are a first electrode layer and a second electrode layer;
the Mg-doped transition metal sulfide layer partially covers the InGaN layer, and a table top is formed on the upper surface of the InGaN layer;
a first electrode layer is arranged on the table top of the InGaN layer, and the electrode layer is not in contact with the Mg-doped transition metal sulfide layer;
a second electrode layer is arranged on the Mg-doped transition metal sulfide layer; the second electrode layer partially covers the Mg-doped transition metal sulfide layer.
2. The Mg-doped enhanced transition metal sulfide-based visible light detector of claim 1, wherein: the first electrode layer is a Ti/Au layer, and the second electrode layer is a Ti/Au layer;
the Ti layer in the first electrode layer is arranged on the table top of the InGaN layer; the Au layer is arranged on the Ti layer;
the Ti layer in the second electrode layer is arranged on the Mg-doped transition metal sulfide layer; an Au layer is disposed on the Ti layer.
3. The Mg-doped enhanced transition metal sulfide-based visible light detector of claim 1, wherein: the transition metal sulfide is also called transition metal chalcogenide, and has the chemical formula MX2M is a transition metal element, specifically one of molybdenum, tungsten, niobium, rhenium and titanium, and X is a chalcogen element, specifically one of sulfur, selenium and tellurium.
4. According to claim 1The Mg-doped enhanced transition metal sulfide-based visible light detector is characterized in that: the Mg doping concentration in the Mg-doped transition metal sulfide layer is 2 multiplied by 1018～6×1018cm-3。
5. The method for preparing the Mg-doped enhanced transition metal sulfide-based visible light detector according to any one of claims 1 to 4, wherein the method comprises the following steps: the method comprises the following steps:
1) preparing a Mg-doped transition metal sulfide layer on the Si-based InGaN epitaxial wafer by a chemical vapor deposition method, and annealing;
2) electrode layers are prepared on the annealed Mg-doped transition metal sulfide layer and on the InGaN layer not covered by the Mg-doped transition metal sulfide layer.
6. The method for preparing the Mg-doped enhanced transition metal sulfide-based visible light detector according to claim 5, wherein the method comprises the following steps: the annealing conditions are as follows: the temperature is 600 ℃ and 750 ℃, and the time is 0.5-2 h.
7. The method for preparing the Mg-doped enhanced transition metal sulfide-based visible light detector according to claim 5, wherein the method comprises the following steps: the method comprises the following specific steps:
s1) spin-coating a positive photoresist on the Si-based InGaN epitaxial wafer, and photoetching to obtain an evaporation area of an Mg layer, wherein the evaporation area is positioned at one end of the upper surface of the epitaxial wafer;
s2) evaporating a layer of metal Mg in an evaporation area by adopting a molecular beam evaporation method, and stripping unexposed photoresist to obtain an epitaxial wafer device containing an Mg layer;
s3) preparing an epitaxial Mg-doped TMDS layer on an epitaxial wafer device containing an Mg layer by taking a transition metal oxide and a chalcogen source as precursors through a chemical vapor deposition method, and annealing to obtain a TMDS/InGaN layer-doped device; the Mg-doped TMDS layer in the device partially covers the InGaN layer;
s4) spin-coating photoresist on the TMDS/InGaN layer-doped device, and photoetching to obtain an electrode deposition area with a required shape; the electrode deposition area is positioned on the Mg-doped TMDS layer and the InGaN layer which is not covered by the Mg-doped TMDS layer; the Mg-doped TMDS layer refers to a Mg-doped transition metal sulfide layer;
s5) evaporating metal electrodes in the deposition area by adopting a molecular beam evaporation method, and stripping unexposed photoresist to obtain the Mg-doped enhanced transition metal sulfide-based visible light detector.
8. The method for preparing the Mg-doped enhanced transition metal sulfide-based visible light detector according to claim 7, wherein the method comprises the following steps: in the step S3), the transition metal oxide is the oxide of molybdenum, tungsten, niobium, rhenium and titanium; the chalcogenide source is sulfur, selenium and tellurium powder;
the chemical vapor deposition is carried out under the argon atmosphere at the standard atmospheric pressure;
the chemical vapor deposition equipment in the step S3) is a tube furnace;
conditions of chemical vapor deposition: the growth environment is 700-780Torr argon atmosphere; the transition metal oxide and the sulfur group source are heated at different temperatures, wherein the heating temperatures are respectively 650-750 ℃ and 100-140 ℃; the growth time is 2-6 min;
the thickness of the Mg-doped TMDS layer is 1-100 nm; the Mg doping concentration in the Mg-doped TMDS layer is 2 multiplied by 1018～6×1018cm-3；
Step 3) annealing treatment: the temperature is 600-750 ℃, and the annealing time is 0.5-2 h.
9. The method for preparing the Mg-doped enhanced transition metal sulfide-based visible light detector according to claim 7, wherein the method comprises the following steps: the metal electrode in the step S5) is a Ti/Au electrode, and the Ti layer is arranged on the Mg-doped transition metal sulfide layer; the Au layer is arranged on the Ti layer; the thicknesses of the Ti electrode and the Au electrode are respectively 30-60nm and 60-150 nm;
in the step S1), the Si-based InGaN substrate is an InGaN single crystal or epitaxial wafer, the thickness of the Si layer is 300-400um, and the thickness of the InGaN epitaxial wafer is 1-3 um;
step S2) the thickness of the Mg layer is 10-100 nm.
10. The use of Mg-doped enhanced transition metal sulfide-based visible light detectors as claimed in any one of claims 1 to 4, wherein: the Mg-doped enhanced transition metal sulfide-based visible light detector is used for preparing a visible light communication photoelectric detector.
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