CN114203858A - CIGS (copper indium gallium selenide) matrix uniform heating device and heating control method thereof - Google Patents
CIGS (copper indium gallium selenide) matrix uniform heating device and heating control method thereof Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 167
- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000011159 matrix material Substances 0.000 title claims abstract description 13
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 230000008569 process Effects 0.000 claims abstract description 41
- 238000010792 warming Methods 0.000 claims abstract description 36
- 230000000630 rising effect Effects 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 230000002457 bidirectional effect Effects 0.000 claims description 19
- 230000005540 biological transmission Effects 0.000 claims description 12
- 239000011553 magnetic fluid Substances 0.000 claims description 11
- 238000005192 partition Methods 0.000 claims description 10
- 238000007599 discharging Methods 0.000 claims description 9
- 230000010355 oscillation Effects 0.000 claims description 7
- 230000002035 prolonged effect Effects 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000033764 rhythmic process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a CIGS (copper indium gallium selenide) matrix uniform heating device and a heating control method thereof, wherein the CIGS matrix uniform heating device comprises a film inlet cavity, a temperature rising cavity, a temperature homogenizing cavity, a process cavity, a conveying cavity and a film outlet cavity which are sequentially communicated from front to back, a cavity cover heating temperature rising device and a bottom heating temperature rising device which are arranged in the temperature rising cavity, a bottom additional device arranged in the process cavity, two pyrometers respectively arranged in the temperature homogenizing cavity and the conveying cavity, and a main controller; the silicon controlled heating controller of the cavity cover heating and warming device, the silicon controlled heating controller of the bottom additional device and the two pyrometers are all connected with the master controller. The invention ensures that the CIGS substrate realizes high-temperature magnetron sputtering deposition and ensures the uniformity of the heating temperature of the CIGS substrate.
Description
Technical Field
The invention relates to the field of CIGS substrate manufacturing, in particular to a CIGS substrate uniform heating device and a heating control method thereof.
Background
With the trend of global energy, solar photovoltaic power generation has been rapidly developed in recent years as a sustainable energy alternative, and has been widely popularized and applied in developed countries such as the united states, germany, japan, and spain.
The copper indium selenide solar thin film battery is formed by depositing a plurality of layers of metal compound semiconductor thin films on a glass or other cheap substrates, wherein the total thickness of the thin films is about 2-3 mm, and the solar light is utilized to generate electricity. The copper indium selenium cell has the characteristics of low cost, stable performance, strong radiation resistance and the like, and the photoelectric conversion efficiency is the first of various thin film solar cells at present.
In the manufacturing process of a Copper Indium Gallium Selenide (CIGS) battery, a window layer AZO conducting layer is used as a first film layer for receiving incident light, high light transmittance and high conductivity are needed, and how to ensure the performance of the film layer, a high-temperature magnetron sputtering deposition technology is an ideal means for large-scale production at present. In practical application, an existing heating system is very unstable, particularly a large-area chip heating system, the control difficulty is high, interference among heating wires is large, so that the heating system is abandoned in magnetron sputtering deposition operation, normal-temperature sputtering is adopted, however, crystal grains are small, crystal orientation is disordered, light transmittance and appearance color of a film are greatly influenced, when magnetron sputtering deposition is carried out by using heating system equipment, the temperature difference of the heating system equipment can only be controlled within plus or minus 10 ℃, the process temperature is rapidly increased from a normal temperature state to 250 ℃ under the condition that the temperature of a CIGS substrate meets 24s production rhythm, and the temperature difference is controlled within plus or minus 1 ℃, so that the technical problem which is difficult to solve in the existing AZO coating technology is solved.
Disclosure of Invention
The invention aims to provide a CIGS substrate uniform heating device and a heating control method thereof, which can ensure that the CIGS substrate realizes high-temperature magnetron sputtering deposition and ensure the uniformity of the heating temperature of the CIGS substrate.
The technical scheme of the invention is as follows:
a CIGS substrate uniform heating device comprises a film feeding cavity, a temperature rising cavity, a temperature homogenizing cavity, a process cavity, a conveying cavity and a film discharging cavity which are sequentially communicated from front to back, a cavity cover heating and temperature rising device and a bottom heating and temperature rising device which are arranged in the temperature rising cavity, a bottom additional device arranged in the process cavity, two pyrometers respectively arranged in the temperature homogenizing cavity and the conveying cavity, and a main controller; CIGS matrix conveying roller ways are arranged in the film feeding cavity, the temperature rising cavity, the temperature homogenizing cavity, the process cavity, the conveying cavity and the film discharging cavity and are spliced with one another; the cavity cover heating and warming device is arranged in a cavity cover of the warming cavity and comprises a plurality of serpentine heating pipes and two auxiliary heating wires, the serpentine heating pipes are all horizontally arranged at the same horizontal height, the serpentine heating pipes are arranged between the two auxiliary heating wires, the two auxiliary heating wires are respectively adjacent to the sheet feeding cavity and the temperature homogenizing cavity, each auxiliary heating wire is a spring heating wire, each auxiliary heating wire is divided into three sections and comprises a middle part and two end parts, the length of the middle part is twice of the length of the end parts, and the heating power of the end parts is twice of the heating power of the middle part; the bottom heating and warming device in the warming cavity and the bottom adding device in the process cavity both comprise a plurality of spring heating wires, and each spring heating wire is arranged between two adjacent conveying rollers of the CIGS substrate conveying roller bed; the controllable silicon heating controller of the cavity cover heating and warming device, the controllable silicon heating controller of the bottom additional device and the two pyrometers are all connected with the master controller.
The CIGS substrate conveying roller in the heating cavity is a bidirectional reciprocating oscillation type conveying roller, two position sensors facing the front end and the rear end of the bidirectional reciprocating oscillation type conveying roller are arranged in the heating cavity, and a driving controller of the bidirectional reciprocating oscillation type conveying roller and the two position sensors are connected through a master controller.
The plurality of the serpentine heating pipes comprise two U-shaped heating pipes with the U-shaped notches facing towards the same direction and arc-shaped heating pipes, and the arc-shaped heating pipes are connected between the two U-shaped heating pipes, so that U-shaped notch structures with opposite directions are formed between the two U-shaped heating pipes.
The pyrometers in the temperature homogenizing cavity and the conveying cavity are both arranged at the position adjacent to the process cavity.
The bottom heating and warming device and the bottom installing device respectively comprise a temperature equalizing housing, the temperature equalizing housing is of a rectangular box structure with an opening at the top end, and each spring heating wire is arranged in the corresponding temperature equalizing housing.
A vertically arranged U-shaped partition plate covers a transmission gear at the end part of each conveying roller of the CIGS substrate conveying roller, the transmission gear is located between two vertical parts of the U-shaped partition plate, and the horizontal parts of the U-shaped partition plates separate the transmission gears and the magnetic fluid which are mutually connected, so that the magnetic fluid is prevented from being damaged at high temperature, and the service life of the magnetic fluid is prolonged.
And a stainless steel wire mesh sleeve is covered outside each conveying roller of the bidirectional reciprocating oscillating type conveying roller.
A CIGS matrix uniform heating control method specifically comprises the following steps:
(1) after entering a sheet feeding chamber, the CIGS substrate is vacuumized to be below 0.5Pa and then conveyed into a temperature rising chamber through a CIGS substrate conveying roller;
(2) the CIGS substrate enters a heating cavity, is conveyed to the rear end of the bidirectional reciprocating oscillating conveying roller through the bidirectional reciprocating oscillating conveying roller, then is conveyed to the front end of the bidirectional reciprocating oscillating conveying roller in a forward and reverse conveying motion, and enters a temperature homogenizing cavity after being oscillated for 6 times in a reciprocating manner;
(3) after the CIGS substrate enters the temperature equalizing cavity, the CIGS substrate enters the process cavity after being measured by one of the pyrometers, and after sputtering of the process cavity is completed, the CIGS substrate enters the conveying cavity, is measured by the other pyrometer and then enters the sheet discharging cavity;
(4) in the CIGS substrate conveying process, numerical values are fed back to the main controller after the temperature of one of the pyrometers is measured, the main controller performs power output adjustment control on the cavity cover heating temperature rising device and the bottom heating temperature rising device in the temperature rising cavity through comparison with a set temperature value, the CIGS substrate is fed back to the main controller through the numerical values measured by the other pyrometer, the main controller performs power output adjustment control on the bottom in the process cavity by additionally arranging a device at the bottom of the process cavity through comparison with the set temperature value, and the temperature difference between the acquisition temperature of the CIGS substrate and the set temperature value in follow-up conveying is controlled within 1 ℃.
The main controller controls the power output of the cavity cover heating and warming device and the bottom heating and warming device or controls the power output of the device additionally arranged at the bottom in the process cavity, the collection temperature still does not reach the set temperature difference range, the collection temperatures of the two pyrometers are compared with the set temperature, the main controller respectively controls the cavity cover heating and warming device and the bottom heating and warming device in the warming cavity, and the device additionally arranged at the bottom in the process cavity to distribute the power, so that the collection temperature of the CIGS substrate for subsequent conveying and the temperature difference of the set temperature value are controlled within 1 ℃.
The invention has the advantages that:
(1) the CIGS substrate magnetron sputtering device is provided with the temperature rising cavity, the cavity cover heating temperature rising device and the bottom heating temperature rising device are arranged in the temperature rising cavity, rapid heating of the CIGS substrate can be achieved, the bottom additional device is arranged in the process cavity, it is further guaranteed that the cavity cover heating temperature rising device, the bottom heating temperature rising device and the bottom additional device are all controlled by the independent silicon controlled heating controller when the process cavity is in a high-temperature environment during magnetron sputtering, and uniformity of heating temperature of the CIGS substrate can be controlled to the maximum.
(2) The length of the middle part of the compensation heating wire is twice of the length of the end part, and the heating power of the end part is twice of the heating power of the middle part, so that the heat loss of the CIGS substrate around the cavity is effectively supplemented.
(3) According to the invention, a complete closed-loop control system is formed by temperature detection, temperature comparison and temperature analysis and then adjustment of output heating power, so that real-time control is realized in a continuous and batch feeding production mode, and the stability and uniformity of the temperature of the magnetron sputtering process are ensured.
(4) The invention is provided with the temperature equalizing cover shell, on one hand, the heat loss caused by heating the ineffective area by the spring heating wire is avoided, the reduction of the service life of the conveying roller on the opposite side caused by heating is avoided, and simultaneously, the heat energy is intensively radiated to the upper CIGS substrate, thereby ensuring the effective utilization of the heat energy.
(5) According to the CIGS substrate conveying roller, the U-shaped partition plates which are vertically arranged are covered outside the transmission gear at the end part of each conveying roller of the CIGS substrate conveying roller, so that the problems of damage and meshing caused by excessive heating between the transmission gears connected with the roller shafts are solved, the damage of the magnetic fluid connected with the transmission gears at high temperature is avoided, and the service life of the magnetic fluid is prolonged.
(6) The stainless steel wire mesh sleeves are covered outside each conveying roller of the bidirectional reciprocating oscillating type conveying roller, so that on one hand, the contact area of the conveying roller and the CIGS substrate is more uniform, on the other hand, the friction force between the CIGS substrate and the conveying roller is increased, displacement cannot be generated after the CIGS substrate is in reciprocating oscillation, and the advancing consistency of a plurality of CIGS substrates in the same ratio is ensured.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is a schematic structural diagram of the chamber cover heating and warming device of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a CIGS matrix uniform heating device comprises a film feeding cavity 1, a heating cavity 2, a temperature equalizing cavity 3, a process cavity 4, a conveying cavity 5 and a film discharging cavity 6 which are sequentially communicated from front to back, a cavity cover heating and heating device 7 and a bottom heating and heating device 8 which are arranged in the heating cavity 2, a bottom additional installation device 9 arranged in the process cavity 4, two pyrometers 10 respectively arranged in the temperature equalizing cavity 3 and the conveying cavity 5, and a master controller 11; CIGS matrix conveying roller ways 12 are arranged in the film feeding cavity 1, the temperature rising cavity 2, the temperature homogenizing cavity 3, the process cavity 4, the conveying cavity 5 and the film discharging cavity 6 and are spliced with one another; the cavity cover heating and warming device 7 is arranged in a cavity cover of the warming cavity 2, and comprises three serpentine heating pipes 71 and two auxiliary heating wires 72 (see fig. 2), wherein the three serpentine heating pipes 71 are all arranged at the same horizontal height in a tiled mode, the three serpentine heating pipes 71 are arranged between the two auxiliary heating wires 772, the two auxiliary heating wires 72 are respectively adjacent to the sheet feeding cavity 1 and the temperature homogenizing cavity 3, each auxiliary heating wire 72 is a spring heating wire, each auxiliary heating wire 72 is divided into three sections, and comprises a middle part and two end parts, the length of the middle part is twice of that of each end part, and the heating power of each end part is twice of that of the middle part; the bottom heating and warming device 8 in the warming cavity 2 and the bottom adding device 9 in the process cavity 4 both comprise a plurality of spring heating wires, and each spring heating wire is arranged between two adjacent conveying rollers of the CIGS substrate conveying roller bed 12; wherein, CIGS base member conveying roller 12 in intensification chamber 2 is two-way reciprocal oscillating type conveying roller, it is provided with two respectively towards two-way reciprocal oscillating type conveying roller front end and rear end's position sensor 13 to rise in the temperature chamber 2, pyrometer 10 in even temperature chamber 3 and the conveying chamber 5 all sets up in the position that is close to process chamber 4, the silicon controlled rectifier heating controller of chamber lid heating and warming device 7, the silicon controlled rectifier heating controller of bottom heating and warming device 8, the silicon controlled rectifier heating controller of bottom install device 9 additional, two pyrometers 10, the drive control ware of two-way reciprocal oscillating type conveying roller, two position sensor 13 all are connected with master controller 11.
Wherein, three snakelike heating pipe 71 all includes two U-shaped notch orientation unanimous U-shaped heating pipe and arc heating pipe, is connected with the arc heating pipe between two U-shaped heating pipes for form the U-shaped notch structure that the orientation is opposite between two U-shaped heating pipes.
The bottom heating and warming device 8 and the bottom installing device 9 both comprise temperature-equalizing casings 14, the temperature-equalizing casings 14 are of rectangular box structures with open top ends, and each spring heating wire is arranged in the corresponding temperature-equalizing casing 14; a vertically arranged U-shaped partition plate is covered outside a transmission gear at the end part of each conveying roller of the CIGS substrate conveying rollers 12, the transmission gear is positioned between two vertical parts of the U-shaped partition plate, and a horizontal part of the U-shaped partition plate separates the transmission gear and the magnetic fluid which are mutually connected, so that the magnetic fluid is prevented from being damaged at high temperature, and the service life of the magnetic fluid is prolonged; and a stainless steel wire mesh sleeve is covered outside each conveying roller of the bidirectional reciprocating oscillating type conveying roller.
A CIGS matrix uniform heating control method specifically comprises the following steps:
(1) after entering the sheet inlet chamber 1, the CIGS matrix 15 is vacuumized to be below 0.5Pa and then is conveyed into the temperature rising chamber 2 through the CIGS matrix conveying roller 12;
(2) the CIGS substrate 15 enters the temperature rising cavity 2, is conveyed to the rear end of the bidirectional reciprocating oscillating conveying roller through the bidirectional reciprocating oscillating conveying roller, then is conveyed to the front end of the bidirectional reciprocating oscillating conveying roller in a forward and reverse conveying motion, and enters the temperature homogenizing cavity after being oscillated repeatedly for 6 times;
(3) after the CIGS substrate enters the temperature equalizing cavity, the CIGS substrate enters the process cavity after being measured by one of the pyrometers, and after sputtering of the process cavity is completed, the CIGS substrate enters the conveying cavity, is measured by the other pyrometer and then enters the sheet discharging cavity;
(4) in the conveying process of the CIGS substrate, the numerical value is fed back to the main controller after the temperature of one pyrometer is measured, the main controller performs power output adjustment control on the cavity cover heating temperature rising device and the bottom heating temperature rising device in the temperature rising cavity through comparison with a set temperature value, the numerical value of the CIGS substrate is fed back to the main controller after the temperature of the other pyrometer is measured, and the main controller performs power output adjustment control on the bottom additional device in the process cavity through comparison with the set temperature value, so that the temperature difference between the subsequently conveyed collecting temperature of the CIGS substrate and the set temperature value is controlled within 1 ℃; when the master controller carries out power output control on the cavity cover heating and warming device and the bottom heating and warming device or carries out power output control on the bottom additionally-installed device in the process cavity, the acquisition temperature still does not reach the set temperature difference range, then the acquisition temperatures of the two pyrometers are compared with the set temperature, the master controller respectively carries out power distribution on the cavity cover heating and warming device and the bottom heating and warming device in the warming cavity, and the bottom additionally-installed device in the process cavity, so that the acquisition temperature of the CIGS substrate for subsequent conveying and the temperature difference of the set temperature value are controlled within 1 ℃.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. A CIGS matrix uniform heating device is characterized in that: the device comprises a film feeding cavity, a temperature rising cavity, a temperature homogenizing cavity, a process cavity, a conveying cavity and a film discharging cavity which are sequentially communicated from front to back, a cavity cover heating and temperature rising device and a bottom heating and temperature rising device which are arranged in the temperature rising cavity, a bottom additional device arranged in the process cavity, two pyrometers respectively arranged in the temperature homogenizing cavity and the conveying cavity, and a main controller; CIGS matrix conveying roller ways are arranged in the film feeding cavity, the temperature rising cavity, the temperature homogenizing cavity, the process cavity, the conveying cavity and the film discharging cavity and are spliced with one another; the cavity cover heating and warming device is arranged in a cavity cover of the warming cavity and comprises a plurality of serpentine heating pipes and two auxiliary heating wires, the serpentine heating pipes are all horizontally arranged at the same horizontal height, the serpentine heating pipes are arranged between the two auxiliary heating wires, the two auxiliary heating wires are respectively adjacent to the sheet feeding cavity and the temperature homogenizing cavity, each auxiliary heating wire is a spring heating wire, each auxiliary heating wire is divided into three sections and comprises a middle part and two end parts, the length of the middle part is twice of the length of the end parts, and the heating power of the end parts is twice of the heating power of the middle part; the bottom heating and warming device in the warming cavity and the bottom adding device in the process cavity both comprise a plurality of spring heating wires, and each spring heating wire is arranged between two adjacent conveying rollers of the CIGS substrate conveying roller bed; the controllable silicon heating controller of the cavity cover heating and warming device, the controllable silicon heating controller of the bottom additional device and the two pyrometers are all connected with the master controller.
2. A CIGS substrate uniform heating device as claimed in claim 1, wherein: the CIGS substrate conveying roller in the heating cavity is a bidirectional reciprocating oscillation type conveying roller, two position sensors facing the front end and the rear end of the bidirectional reciprocating oscillation type conveying roller are arranged in the heating cavity, and a driving controller of the bidirectional reciprocating oscillation type conveying roller and the two position sensors are connected through a master controller.
3. A CIGS substrate uniform heating device as claimed in claim 1, wherein: the plurality of the serpentine heating pipes comprise two U-shaped heating pipes with the U-shaped notches facing towards the same direction and arc-shaped heating pipes, and the arc-shaped heating pipes are connected between the two U-shaped heating pipes, so that U-shaped notch structures with opposite directions are formed between the two U-shaped heating pipes.
4. A CIGS substrate uniform heating device as claimed in claim 1, wherein: the pyrometers in the temperature homogenizing cavity and the conveying cavity are both arranged at the position adjacent to the process cavity.
5. A CIGS substrate uniform heating device as claimed in claim 1, wherein: the bottom heating and warming device and the bottom installing device respectively comprise a temperature equalizing housing, the temperature equalizing housing is of a rectangular box structure with an opening at the top end, and each spring heating wire is arranged in the corresponding temperature equalizing housing.
6. A CIGS substrate uniform heating device as claimed in claim 1, wherein: a vertically arranged U-shaped partition plate covers a transmission gear at the end part of each conveying roller of the CIGS substrate conveying roller, the transmission gear is located between two vertical parts of the U-shaped partition plate, and the horizontal parts of the U-shaped partition plates separate the transmission gears and the magnetic fluid which are mutually connected, so that the magnetic fluid is prevented from being damaged at high temperature, and the service life of the magnetic fluid is prolonged.
7. A CIGS substrate uniform heating device as claimed in claim 2, wherein: and a stainless steel wire mesh sleeve is covered outside each conveying roller of the bidirectional reciprocating oscillating type conveying roller.
8. The method of claim 2, wherein the step of heating the CIGS substrate uniformly heating device further comprises: the method specifically comprises the following steps:
(1) after entering a sheet feeding chamber, the CIGS substrate is vacuumized to be below 0.5Pa and then conveyed into a temperature rising chamber through a CIGS substrate conveying roller;
(2) the CIGS substrate enters a heating cavity, is conveyed to the rear end of the bidirectional reciprocating oscillating conveying roller through the bidirectional reciprocating oscillating conveying roller, then is conveyed to the front end of the bidirectional reciprocating oscillating conveying roller in a forward and reverse conveying motion, and enters a temperature homogenizing cavity after being oscillated for 6 times in a reciprocating manner;
(3) after the CIGS substrate enters the temperature equalizing cavity, the CIGS substrate enters the process cavity after being measured by one of the pyrometers, and after sputtering of the process cavity is completed, the CIGS substrate enters the conveying cavity, is measured by the other pyrometer and then enters the sheet discharging cavity;
(4) in the CIGS substrate conveying process, numerical values are fed back to the main controller after the temperature of one of the pyrometers is measured, the main controller performs power output adjustment control on the cavity cover heating temperature rising device and the bottom heating temperature rising device in the temperature rising cavity through comparison with a set temperature value, the CIGS substrate is fed back to the main controller through the numerical values measured by the other pyrometer, the main controller performs power output adjustment control on the bottom in the process cavity by additionally arranging a device at the bottom of the process cavity through comparison with the set temperature value, and the temperature difference between the acquisition temperature of the CIGS substrate and the set temperature value in follow-up conveying is controlled within 1 ℃.
9. The heating control method according to claim 8, characterized in that: the main controller controls the power output of the cavity cover heating and warming device and the bottom heating and warming device or controls the power output of the device additionally arranged at the bottom in the process cavity, the collection temperature still does not reach the set temperature difference range, the collection temperatures of the two pyrometers are compared with the set temperature, the main controller respectively controls the cavity cover heating and warming device and the bottom heating and warming device in the warming cavity, and the device additionally arranged at the bottom in the process cavity to distribute the power, so that the collection temperature of the CIGS substrate for subsequent conveying and the temperature difference of the set temperature value are controlled within 1 ℃.
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| KR101097718B1 (en) * | 2011-05-31 | 2011-12-22 | 에스엔유 프리시젼 주식회사 | CIS Thin Film Rapid Heat Treatment Apparatus |
| CN202178284U (en) * | 2011-02-15 | 2012-03-28 | 河北汉盛光电科技有限公司 | Apparatus for preparing silicon-based film solar energy battery |
| CN107424947A (en) * | 2017-08-16 | 2017-12-01 | 君泰创新（北京）科技有限公司 | The temperature testing method and system of hull cell process equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202178284U (en) * | 2011-02-15 | 2012-03-28 | 河北汉盛光电科技有限公司 | Apparatus for preparing silicon-based film solar energy battery |
| KR101097718B1 (en) * | 2011-05-31 | 2011-12-22 | 에스엔유 프리시젼 주식회사 | CIS Thin Film Rapid Heat Treatment Apparatus |
| CN107424947A (en) * | 2017-08-16 | 2017-12-01 | 君泰创新（北京）科技有限公司 | The temperature testing method and system of hull cell process equipment |
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