CN114070203B - Broadband up-conversion mixer - Google Patents
Broadband up-conversion mixer Download PDFInfo
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- CN114070203B CN114070203B CN202210045938.XA CN202210045938A CN114070203B CN 114070203 B CN114070203 B CN 114070203B CN 202210045938 A CN202210045938 A CN 202210045938A CN 114070203 B CN114070203 B CN 114070203B
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- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
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Abstract
本发明公开了一种宽带上变频混频器，涉及微电子技术，解决了目前的上变频混频器随着输入信号幅度增加，上变频混频器的线性度将会恶化的技术问题。包括混频模块，用于将输入电压经过无损处理后线性转变为目标电流，对所述目标电流进行缩放匹配处理后，形成基带信号；将所述基带信号调制到射频频段；巴伦模块，用于将调制后的所述基带信号转换成输出电压，同时将双端输出转成单端输出。本发明能有效的提高混频器的信噪比、线性度，同时解决了由直流失调造成的本振泄露的问题；且其工作状态更加稳定，电路功耗更小，工作带宽更宽。
The invention discloses a wideband up-conversion mixer, which relates to microelectronic technology and solves the technical problem that the linearity of the current up-conversion mixer will deteriorate with the increase of the input signal amplitude. It includes a frequency mixing module, which is used to linearly convert the input voltage into a target current after lossless processing, and after scaling and matching processing of the target current, a baseband signal is formed; the baseband signal is modulated to a radio frequency frequency band; a balun module, with The modulated baseband signal is converted into an output voltage, and the double-ended output is converted into a single-ended output at the same time. The invention can effectively improve the signal-to-noise ratio and linearity of the mixer, and simultaneously solve the problem of local oscillator leakage caused by DC offset; and the working state is more stable, the circuit power consumption is smaller, and the working bandwidth is wider.
Description
Technical Field
The present invention relates to microelectronics, and more particularly, to a broadband upconversion mixer.
Background
With the wide application of wireless communication, communication technology is developed to be compatible with multiple communication standards and meet the trend of multiple frequency bands, and radio frequency transceivers are also developed to be multi-band and multi-standard, which puts higher requirements on the operating bandwidth of the radio frequency transceivers. In addition, to meet the requirement of high data transmission rate, more advanced frequency modulation techniques are required, which all require high linearity of the radio frequency transceiver. The radio frequency front end is an extremely important part of a radio frequency transceiver system, and the mixer is used as a key module of the radio frequency front end and plays an important role in the radio frequency front end, so that the performance of the mixer directly influences the performance of the whole transmitter front end system and influences the quality of information transmission.
In a transmitter, the signal-to-noise ratio is a key index for ensuring signal transmission, and the signal-to-noise ratio requires that the amplitude of an input signal of an up-conversion mixer is large enough; secondly, in the direct upconversion transmitter, the local oscillator leakage is a non-negligible problem, measures need to be taken to suppress the local oscillator leakage in order to ensure the quality of the transmitted signal, and the generation of the direct current offset needs to be suppressed because the direct current offset at the input end of the upconversion mixer can cause the local oscillator leakage at the output end of the upconversion mixer. Whether the signal-to-noise ratio is improved or the direct current offset is suppressed, the amplitude of the input signal of the up-conversion mixer is required to be large enough. However, as the amplitude of the input signal increases, the linearity of the up-conversion mixer will deteriorate, so it is necessary to find a design method that can suppress dc offset without deteriorating the linearity.
Disclosure of Invention
The invention provides a broadband up-conversion mixer aiming at the defects of the prior art, which can effectively improve the signal-to-noise ratio and the linearity of the mixer and simultaneously solve the problem of local oscillator leakage caused by direct current imbalance.
The invention relates to a broadband up-conversion mixer, which comprises:
the frequency mixing module is used for converting input voltage into target current linearly after lossless processing, and forming a baseband signal after scaling matching processing is carried out on the target current; modulating the baseband signal to a radio frequency band;
and the balun module is used for converting the modulated baseband signal into an output voltage and converting double-end output into single-end output.
The frequency mixing module is further improved to be provided with two paths, namely an I path frequency mixing module and a Q path frequency mixing module; the I-path mixing module and the Q-path mixing module have the same structure and form an input matching network so as to realize the impedance matching of the maximum output power of the multi-frequency point.
Further, the frequency mixing module comprises:
the improved voltage-to-current module copies the input voltage to a linear conversion structure through a high input impedance structure without distortion, converts the input voltage into a target current through the linear conversion structure, and forms a baseband signal after the target current is subjected to scaling matching through a current mirror structure;
and the current switch module is used for carrying out frequency conversion on the baseband signal according to a designed radio frequency band.
Furthermore, the improved voltage-to-current module comprises a high input impedance structure consisting of two high-gain operational amplifiers with consistent circuit structures, a linear conversion structure consisting of a resistor R1 and a resistor R2, a first current mirror structure consisting of a field-effect tube Min1 and a field-effect tube Mout1, and a second current mirror structure consisting of a field-effect tube Min2 and a field-effect tube Mout 2;
wherein, two high-gain operational amplifiers are respectively marked as: a first high gain operational amplifier a1 and a second high gain operational amplifier a 2;
the negative input ends of the two high-gain operational amplifiers are used as connecting ends of input voltage; the positive input end of the first high-gain operational amplifier A1 is connected with one end of a resistor R1, the connection end of the first high-gain operational amplifier A1 and the resistor R1 is connected with the drain electrode of a field-effect tube Min1, and the output end of the first high-gain operational amplifier A1 is respectively connected with the gate electrodes of the field-effect tube Min1 and the field-effect tube Mout 1; the positive input end of the second high-gain operational amplifier A2 is connected with one end of a resistor R2, the connection end of the second high-gain operational amplifier A2 and the resistor R2 is connected with the drain electrode of the field-effect tube Min2, and the output end of the second high-gain operational amplifier A2 is respectively connected with the gate electrodes of the field-effect tube Min2 and the field-effect tube Mout 2; the drains of the field effect tube Mout1 and the field effect tube Mout2 are connected with the input end of the current switch module; the source electrodes of the field-effect tube Min1, the field-effect tube Min2, the field-effect tube Mout1 and the field-effect tube Mout2 are all grounded; the other end of the resistor R1 is connected with the other end of the resistor R2, and the connection end of the resistor R1 and the resistor R2 is grounded through a capacitor C1.
Furthermore, the connection end of the first high-gain operational amplifier A1 and the resistor R1 is connected with a first bias current source; and the connection end of the second high-gain operational amplifier A2 and the resistor R2 is connected with a second bias current source.
Furthermore, low-pass filter modules are respectively arranged between the output end of the first high-gain operational amplifier A1 and the gate of the field-effect tube Mout1, and between the output end of the second high-gain operational amplifier A2 and the gate of the field-effect tube Mout 2.
Furthermore, the resistor R1, the resistor R2, the first bias current source, the second bias current source, the field-effect tube Min1 and the field-effect tube Min2 are all parameter-adjustable components.
The high gain operational amplifier includes:
the first-stage amplification structure is used for amplifying the input voltage and then taking the amplified input voltage as an input voltage signal of the second-stage amplification structure;
the second-stage amplification structure is used for amplifying the input voltage signal and taking the amplified input voltage signal as an output signal of the high-gain operational amplifier;
and the third current mirror structure is used for providing bias current for the first-stage amplification structure and the second-stage amplification structure.
Further, the high-gain operational amplifier further comprises a miller compensation structure; the Miller compensation structure is connected between the output end of the high-gain operational amplifier and the control end of the second-stage amplification structure.
Furthermore, the third current mirror structure is provided with an active load as a high-gain operational amplifier for increasing the output impedance of the high-gain operational amplifier to increase the circuit gain thereof.
Advantageous effects
The invention has the advantages that:
1. the frequency mixing module can effectively improve the signal-to-noise ratio and the linearity of the frequency mixer by carrying out lossless processing and scaling matching processing on the input voltage to obtain the baseband signal, and simultaneously solves the problem of local oscillator leakage caused by direct current offset.
2. The improved voltage-to-current module reduces the use of reference voltage, and the common-mode voltage of the positive input end of the high-gain operational amplifier is provided by a feedback loop and is more stable through an RC filter network, so that the working state is more stable.
3. The input matching network formed by two paths of frequency mixing modules with consistent structures can realize impedance matching of the maximum output power of multiple frequency points, thereby greatly improving the working bandwidth of the up-conversion frequency mixer.
4. The resistor R1 and the resistor R2, the first bias current source and the second bias current source, the field-effect tube Min1 and the field-effect tube Min2 in the improved voltage-to-current conversion module are all adjustable, and when the amplitude of input voltage is reduced, the power consumption of a circuit can be effectively reduced by reducing direct current bias current, so that the up-conversion mixer can be applied to a transmitter system with a baseband non-constant amplitude.
Drawings
FIG. 1 is a block diagram of an upconversion mixer of the present invention;
FIG. 2 is a schematic diagram of an upconversion mixer of the present invention;
FIG. 3 is a schematic diagram of a high gain operational amplifier of the present invention;
FIG. 4 is a schematic diagram of a simulation result of output matching of the upconversion mixer at the 800MHz frequency band according to the present invention;
FIG. 5 is a schematic diagram of a simulation result of output matching of the upconversion mixer at the 2.4GHz frequency band according to the present invention;
FIG. 6 is a diagram illustrating simulation results of output matching of the upconversion mixer at 5.5GHz band according to the present invention;
FIG. 7 is a diagram illustrating simulation results of output power of an upconversion mixer according to the present invention;
FIG. 8 is a diagram illustrating simulation results of conversion gain of the upconversion mixer according to the present invention;
fig. 9 is a schematic diagram of a simulation result of the output third-order intercept point of the upconversion mixer according to the present invention.
Wherein: the circuit comprises a 1-balun module, a 2-I path mixing module, a 3-Q path mixing module, a 4-improved voltage-to-current module, a 5-current switch module and a 6-low-pass filter module.
Detailed Description
The invention is further described below with reference to examples, but not to be construed as being limited thereto, and any number of modifications which can be made by anyone within the scope of the claims are also within the scope of the claims.
Referring to fig. 1, the present invention provides a wideband up-conversion mixer, including:
and the frequency mixing module is used for converting the input voltage into a target current linearly after lossless processing, and forming a baseband signal after scaling and matching the target current. The baseband signal obtained by carrying out lossless processing and scaling matching processing on the input voltage can effectively improve the signal-to-noise ratio and the linearity of the frequency mixer, and simultaneously solve the problem of local oscillator leakage caused by direct current offset.
After the frequency mixing module obtains the baseband signal, the baseband signal is modulated to a radio frequency band. And the modulated baseband signal is converted into output voltage through the balun module 1, and meanwhile, double-end output is converted into single-end output.
The mixing module of the present embodiment includes: a modified voltage-to-current module 4 and a current switch module 5.
The improved voltage-to-current module 4 copies the input voltage to the linear conversion structure through the high input impedance structure without distortion, converts the input voltage to the target current through the linear conversion structure, and forms a baseband signal after the target current is scaled and matched through the current mirror structure.
Further, the improved voltage-to-current module 4 includes a high input impedance structure composed of two high-gain operational amplifiers with the same circuit structure, a linear conversion structure composed of a resistor R1 and a resistor R2, a first current mirror structure composed of a field-effect transistor Min1 and a field-effect transistor Mout1, and a second current mirror structure composed of a field-effect transistor Min2 and a field-effect transistor Mout 2.
Wherein, two high-gain operational amplifiers are respectively marked as: a first high gain operational amplifier a1 and a second high gain operational amplifier a 2.
The negative input ends of the two high-gain operational amplifiers are used as the connecting ends of input voltage; the positive input end of the first high-gain operational amplifier a1 is connected to one end of the resistor R1, the connection end of the first high-gain operational amplifier a1 and the resistor R1 is connected to the drain of the fet Min1, and the output end of the first high-gain operational amplifier a1 is connected to the gates of the fet Min1 and the fet Mout1, respectively. The positive input end of the second high-gain operational amplifier A2 is connected with one end of the resistor R2, the connection end of the second high-gain operational amplifier A2 and the resistor R2 is connected with the drain electrode of the field-effect tube Min2, and the output end of the second high-gain operational amplifier A2 is connected with the gate electrodes of the field-effect tube Min2 and the field-effect tube Mout2 respectively; the drains of the fet Mout1 and the fet Mout2 are connected to the input of the current switching module 5. The source electrodes of the field-effect tube Min1, the field-effect tube Min2, the field-effect tube Mout1 and the field-effect tube Mout2 are all grounded; the other end of the resistor R1 is connected with the other end of the resistor R2, and the connection end of the resistor R1 and the resistor R2 is grounded through a capacitor C1.
The improved voltage-to-current conversion module 4 of the up-conversion mixer of the embodiment adopts a high-gain operational amplifier and a current mirror structure with high gain, and the structure provides a large input impedance, so that the up-conversion mixer is easily driven, and the signal-to-noise ratio of the transmitter is improved.
In addition, the improved voltage-to-current conversion module adopts a mirror current structure, so that the current of the up-conversion mixer is related to the loop gain of the high-gain operational amplifier and the resistor R1. When the loop gain is large enough, the current is only related to the resistor R1, and the linearity of the up-conversion mixer is improved. Moreover, the virtual ground of the improved voltage-to-current module is provided by the positive and negative properties of signals in the differential circuit, and no additional element is added. The circuit reduces the use of reference voltage, and the common mode voltage of the positive input end of the high-gain operational amplifier is provided by a feedback loop and is more stable through a filter network consisting of a resistor R1, a resistor R2 and a capacitor C1, and the working state is more stable. The current mirror structure can also effectively increase the matching of each path of current of the up-conversion mixer, reduce direct current imbalance and avoid local oscillator leakage caused by unmatched current.
Preferably, the low-pass filter modules 6 are respectively arranged between the output end of the first high-gain operational amplifier a1 and the gate of the field-effect transistor Mout1, and between the output end of the second high-gain operational amplifier a2 and the gate of the field-effect transistor Mout 2. Specifically, the low-pass filter module 6 is composed of a resistor R3 and a capacitor C2, and the resistor R3 and the capacitor C2 are both parameter-adjustable components. That is, the resistor R3 is a variable resistor, and the capacitor C2 is a variable capacitor.
RC low-pass filters are inserted into the first current mirror structure and the second current mirror structure to filter out third-order harmonics generated in the improved voltage-to-current module 4, so that the linearity of the up-conversion mixer is further improved. The simulation result of the output power of the up-conversion mixer of the present embodiment is shown in fig. 7, the simulation result of the conversion gain is shown in fig. 8, and the simulation result of the output third-order intercept point OIP3 is shown in fig. 9.
Preferably, the connection end of the first high-gain operational amplifier A1 and the resistor R1 is connected with a first bias current source; the connection end of the second high-gain operational amplifier A2 and the resistor R2 is connected with a second bias current source.
In this embodiment, the resistor R1, the resistor R2, the first bias current source, the second bias current source, the fet Min1, and the fet Min2 are all parameter-adjustable components. When the amplitude of the input voltage is reduced, the direct current bias current of the bias current source can be reduced, and the effect of reducing the power consumption of the circuit can be achieved. It can be applied in transmitter systems where the baseband signal has a non-constant amplitude.
And the current switch module 5 is used for carrying out frequency conversion on the baseband signal according to the designed radio frequency band.
The current switch module 5 of the present embodiment is mainly composed of a field effect transistor M9, a field effect transistor M10, a field effect transistor M11, and a field effect transistor M12. The grid of the field effect transistor M9 and the grid of the field effect transistor M12 are both input with a first control signal LOIP; the gate of the fet M10 is connected to the gate of the fet M11, and the second control signal LOIN is input thereto. The field effect transistor M9 is connected with the source electrode of the field effect transistor M10, and is connected with the drain electrode of the field effect transistor Mout 1. The field effect transistor M11 is connected with the source electrode of the field effect transistor M12, and is connected with the drain electrode of the field effect transistor Mout 2. The field effect transistor M9 is connected with the drain electrode of the field effect transistor M11 and is connected with one input end of the balun module 1; the drain of the field effect transistor M10 and the drain of the field effect transistor M12 are connected, and are connected to the other input terminal of the balun module 1.
After the current switch module 5 receives the baseband signal, the frequency of the baseband signal is converted by controlling the fast switching of the field effect transistor by the control signal, so that the baseband signal is modulated to the radio frequency band.
Referring to fig. 2, the frequency mixing module of the present embodiment has two paths, i.e. an I-path frequency mixing module 2 and a Q-path frequency mixing module 3. The I-path mixing module 2 and the Q-path mixing module 3 have the same structure and form an input matching network to realize the impedance matching of the maximum output power of multiple frequency points, thereby greatly improving the working bandwidth of the up-conversion mixer. In this embodiment, the operating bandwidth of the up-conversion mixer is 70M-6 GHz. The output matching simulation results of the up-conversion mixer working in the frequency bands of 800M, 2.4GHz and 5.5GHz are shown in fig. 4-6.
The above scheme will be further described below by taking one of the mixing modules as an example.
The relationship between the input voltage and the output current of the improved voltage-to-current module 4 is as follows:
the two formulas are solved:
in the formula, VinThe input voltage is the input voltage of the improved voltage-to-current module; vXThe voltage of the positive input end of the high-gain operational amplifier; a is the gain of the high gain operational amplifier; gmIs the transconductance of the mirror field effect tube Min 1; i isinIs the current flowing through the field effect transistor Min 1; i isoutIs the current flowing through the field effect transistor Mout 1; m is an improved voltage conversionThe mirror ratio of the current mirror structure in the current block.
When in use
When the temperature of the water is higher than the set temperature,
i.e. the current of the up-conversion mixer is only related to the resistor R1.
The up-conversion mixer adopts an I/Q quadrature sideband suppression mixer structure, and an additional filter is not needed at a transmitting end, so that the system area is reduced, the design is simplified, and the circuit integration level is improved.
Referring to fig. 3, the high gain operational amplifier of the present embodiment includes:
and the first-stage amplification structure is used for amplifying the input voltage and then taking the amplified input voltage as an input voltage signal of the second-stage amplification structure. The first-stage amplification structure is a differential common-source amplification circuit taking an active current mirror as a load. The input pair transistors of the structure are a field effect transistor M1 and a field effect transistor M2, and the gates of the input pair transistors are connected with input voltage for converting the input voltage into current. The active current mirror pair transistors are a field effect transistor M6 and a field effect transistor M7, and are used for converting input current into voltage and serving as input voltage of the second-stage amplifier.
And the second-stage amplification structure is used for amplifying the input voltage signal and taking the amplified input voltage signal as an output signal of the high-gain operational amplifier. The second-stage amplification structure is a single-side common source amplifier. The input tube is a field effect tube M8, and the load tube is a field effect tube M5.
And the third current mirror structure is used for providing bias current for the first-stage amplification structure and the second-stage amplification structure. The third current mirror structure mainly comprises a field effect transistor M4, a field effect transistor M5 and a field effect transistor M3.
In addition, the third current mirror structure is provided with an active load as a high-gain operational amplifier for increasing the output impedance of the high-gain operational amplifier to increase the circuit gain thereof. Specifically, the device as the active load of the high-gain operational amplifier is a field effect transistor M5. That is, the fet M5 also serves as the active load for the high gain operational amplifier.
Preferably, the high-gain operational amplifier further comprises a miller compensation structure and a third bias current source. The Miller compensation structure is connected between the output end of the high-gain operational amplifier and the control end of the second-stage amplification structure. The third bias current source is a bias structure with adjustable current and is used for adjusting the bandwidth of the high-gain operational amplifier.
Specifically, the miller compensation structure is composed of an adjustable resistor R0 and a capacitor C0, and is used for moving a pole between the two stages of amplification structures to an origin, so that an output pole moves in a direction away from the origin, and the phase margin of the circuit is improved. The third bias current source is connected between the power supply terminal and the drain of the fet M3. The resistor R0 adopts an adjustable structure, can change the zero position introduced by Miller compensation, and improves the stability of the circuit.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that those skilled in the art can make various changes and modifications without departing from the structure of the invention, which will not affect the effect of the invention and the practicability of the patent.
Claims (8)
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| CN115276690B (en) * | 2022-06-13 | 2024-03-01 | 北京均微电子科技有限责任公司 | Radio frequency receiving system and output third-order intermodulation point OIP3 calibration method |
| CN119561558B (en) * | 2024-11-27 | 2025-07-08 | 广州润芯信息技术有限公司 | Front-end circuit of current type transmitter and transmitting system |
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| CN101834564A (en) * | 2010-05-14 | 2010-09-15 | 北京利云技术开发公司 | Up-conversion mixer with high-linearity and controllable broadband wide-gain |
| CN113809989A (en) * | 2021-09-15 | 2021-12-17 | 西安博瑞集信电子科技有限公司 | A broadband low-conversion loss double-balanced mixer chip based on GaAs technology |
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| US6057714A (en) * | 1998-05-29 | 2000-05-02 | Conexant Systems, Inc. | Double balance differential active ring mixer with current shared active input balun |
| DE10351606B3 (en) * | 2003-11-05 | 2005-05-25 | Infineon Technologies Ag | High frequency mixer arrangement, e.g. for use in vector modulation, has capacitance(s) in feedback path between differential amplifier output, input of operational amplifier, which is configured as anti-aliasing filter |
| US8693961B2 (en) * | 2011-08-11 | 2014-04-08 | Intel IP Corporation | System and method for improving power efficiency of a transmitter |
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| CN101834564A (en) * | 2010-05-14 | 2010-09-15 | 北京利云技术开发公司 | Up-conversion mixer with high-linearity and controllable broadband wide-gain |
| CN113809989A (en) * | 2021-09-15 | 2021-12-17 | 西安博瑞集信电子科技有限公司 | A broadband low-conversion loss double-balanced mixer chip based on GaAs technology |
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