CN114005810A - Overlay mark of semiconductor device and method of using the same - Google Patents
Overlay mark of semiconductor device and method of using the same Download PDFInfo
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- CN114005810A CN114005810A CN202010739629.3A CN202010739629A CN114005810A CN 114005810 A CN114005810 A CN 114005810A CN 202010739629 A CN202010739629 A CN 202010739629A CN 114005810 A CN114005810 A CN 114005810A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
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Abstract
本公开提供一种半导体器件的套刻标记及其使用方法。其中所述套刻标记包括相对于中心呈十字对称的第一对组件和第二对组件，所述套刻标记还包括至少一对第三对组件，所述第三对组件的两个组件相对于所述中心对称分布。所述套刻标记的使用方法，包括：使用传感器检测所述套刻标记中每个组件的偏差角度和大小；根据所述偏差角度和大小计算确认所述套刻标记的整体偏差角度和大小。本公开能够减少套刻标记分析的次数，可以在早期防止品质不良发生。本公开对于套刻误差数值，禁止过补正与误补正，能够一次确认套刻标记变形的方式。
The present disclosure provides an overlay mark for a semiconductor device and a method of using the same. The overlay mark includes a first pair of components and a second pair of components that are cross-symmetrical with respect to the center, the overlay mark further includes at least a pair of third pairs of components, and the two components of the third pair of components are opposite to each other. distributed symmetrically about the center. The method for using the overlay mark includes: using a sensor to detect the deviation angle and size of each component in the overlay mark; calculating and confirming the overall deviation angle and size of the overlay mark according to the deviation angle and size. The present disclosure can reduce the number of overlay marks analysis, and can prevent the occurrence of poor quality at an early stage. The present disclosure prohibits over-correction and erroneous correction for the over-engraving error value, and can confirm the deformation of the over-engraving mark at one time.
Description
Technical Field
The disclosure relates to the technical field of semiconductors, in particular to an overlay mark of a semiconductor device and a using method thereof.
Background
As the pattern size of Dynamic Random Access Memory (DRAM) becomes smaller, Overlay between patterns becomes increasingly important.
Whether the overlay mark is changed or not is determined according to the current overlay mark map, and the judgment is difficult. If the tracking is performed only by overlay correction or error correction, quality defects such as repetitive labor and poor yield are caused.
In the prior art, techniques for increasing the shape or number of overlay marks exist, but most of the techniques simply make the overlay marks easier to read, and no technique for confirming 1-time deformation of the overlay marks is mentioned.
Disclosure of Invention
An object of the present disclosure is to provide an overlay mark of a semiconductor device and a method of using the same.
The first aspect of the present disclosure provides an overlay mark of a semiconductor device, the overlay mark including a first pair of components and a second pair of components which are cross-symmetric with respect to a center, the overlay mark further including at least one third pair of components, two components of the third pair of components being symmetrically distributed with respect to the center.
A second aspect of the present disclosure provides a method for using an overlay mark, comprising:
detecting a deviation angle and magnitude of each component in the overlay mark using a sensor;
and calculating and confirming the integral deviation angle and size of the overlay mark according to the deviation angle and size.
This disclosure compares advantage with prior art and lies in: the present disclosure can reduce the number of overlay mark analyses and prevent quality defects from occurring at an early stage. The present disclosure can confirm the mode of the overlay mark deformation at a time by prohibiting the overcorrection and the overcorrection of the overlay error value.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the disclosure. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic diagram of a prior art overlay mark structure;
FIG. 2 is a schematic diagram of the prior art overlay mark structure undergoing X-axis deformation;
FIG. 3 is a schematic diagram of a prior art overlay mark structure undergoing Y-axis deformation;
FIG. 4 is a schematic view of a first overlay mark structure of the present disclosure;
FIG. 5 is a schematic diagram illustrating X-axis deformation of a first overlay mark structure according to the present disclosure;
FIG. 6 is a schematic diagram of a first overlay mark structure of the present disclosure undergoing a Y-axis deformation;
FIG. 7 is a schematic view of the direction and extent of detectable distortion of a first overlay mark of the present disclosure;
FIG. 8 is a flow chart of a first method of using the overlay mark of the present disclosure;
FIG. 9 is a schematic view of a second overlay mark structure of the present disclosure;
fig. 10 is a schematic view of a third overlay mark structure of the present disclosure.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
In order to solve the above problems in the prior art, embodiments of the present disclosure provide an overlay mark and a method for using the same, which are described below with reference to the accompanying drawings.
The main invention of the present disclosure is to improve the original overlay mark and add a new overlay mark, so that the deformation of the overlay mark can be grasped at one time. The main purpose of the present disclosure is not to detect overlay errors or to correct them, but to change the shape and structure of the overlay marks.
FIG. 1 is a schematic diagram of a prior art overlay mark structure; as shown in fig. 1, the existing overlay mark includes two groups (four) of components, which are respectively located in four directions of 0 degree, 90 degree, 180 degree, and 270 degree clockwise rotation of the X axis, including: a first component (0 degrees) located in a first region of the overlay mark, wherein the first component comprises a plurality of gratings extending in a first direction (a direction parallel to the Y-axis); a second assembly (the X-axis is rotated clockwise by 90 degrees) located in a second region of the overlay mark, wherein the second assembly comprises a plurality of gratings extending in a second direction (a direction parallel to the X-axis) perpendicular to the first direction; a third component (180 degrees clockwise rotation of the X-axis) located in a third region of the overlay mark, wherein the third component comprises a plurality of gratings extending in a first direction (a direction parallel to the Y-axis); and a fourth component (270 degrees clockwise rotation of the X-axis) located in a fourth region of the overlay mark, wherein the fourth component comprises a plurality of gratings extending in a second direction (a direction parallel to the X-axis).
In this overlay mark, the center of the X-axis and the center of the Y-axis exactly coincide, so the centers of the XY two axes assemble at the same point.
FIG. 2 is a schematic diagram of the prior art overlay mark structure undergoing X-axis deformation; that is, if the X axis moves, although the centers of the XY axes of the overlay marks still overlap at one point, an X axis error occurs.
FIG. 3 is a schematic diagram of a prior art overlay mark structure undergoing Y-axis deformation; that is, if the Y axis moves, although the centers of the XY axes of the overlay mark still overlap at one point, an error occurs in the Y axis.
FIG. 4 is a schematic view of an overlay mark structure of the present disclosure; as shown in fig. 4, the overlay mark of the present disclosure includes four pairs of components symmetrically distributed around a circle, wherein an included angle between an axial direction of each pair of components and an axial direction of an adjacent component is a first angle. The first angle may take different settings, such as 30 degrees, 45 degrees, 60 degrees, etc. The following examples illustrate preferred embodiments of the present disclosure, taking 45 degrees as an example.
As shown in fig. 4, the overlay mark includes four groups (eight) of components, which are respectively located in eight directions of 0 degrees, 45 degrees, 90 degrees, 135 degrees, 180 degrees, 225 degrees, 270 degrees, 315 degrees clockwise rotation of the X-axis, including: a first component (0 degrees) located in a first region of the overlay mark, wherein the first component comprises a plurality of gratings extending in a first direction (a direction parallel to the Y-axis); a second assembly (45 degrees) located in a second region of the overlay mark, wherein the second assembly comprises a plurality of gratings extending in a second direction (a direction 45 degrees from the X-axis positive direction); a third component (the X-axis is rotated clockwise by 90 degrees) located in a third region of the overlay mark, wherein the third component comprises a plurality of gratings extending in a third direction (a direction parallel to the X-axis) perpendicular to the first direction; a fourth component (135 degrees) located in a fourth region of the overlay mark, wherein the fourth component comprises a plurality of gratings extending in a fourth direction (135 degrees from the positive X-axis direction); a fifth component (180 degrees clockwise rotation of the X-axis) located in a fifth region of the overlay mark, wherein the fifth component comprises a plurality of gratings extending in a fifth direction (a direction parallel to the Y-axis); a sixth component (225 degrees) located in a sixth region of the overlay mark, wherein the sixth component comprises a plurality of gratings extending in a sixth direction (a direction 45 degrees from the X-axis positive direction); and a seventh component (270 degrees clockwise rotation of the X-axis) located in a seventh region of the overlay mark, wherein the seventh component comprises a plurality of gratings extending in a seventh direction (a direction parallel to the X-axis); an eighth component (325 degrees) located in an eighth region of the overlay mark, wherein the eighth component comprises a plurality of gratings extending in an eighth direction (a direction 135 degrees from the X-axis forward direction).
In the present disclosure, the overlay mark is a periodic grating, which is composed of scribe lines and grooves. The grating may be a phase grating using the phase difference between light scattered at the upper and lower surfaces of the grating. The grating may also be an amplitude grating, consisting of two surface periodic structures with different reflection coefficients. The grating should contain as much period as possible to avoid edge effects. The influence of the edge roughness of the overlay mark on the alignment precision is random, so that the influence of the edge effect can be reduced by irradiating more grating periods, and the contrast of an alignment signal is improved. However, excessive grating period consumes scribe line resources, resulting in waste of the wafer, and therefore, the design of overlay marks tends to use a smaller grating period and shorter grating lines.
In this overlay mark, the center of the X-axis, the center of the Y-axis, the center of the 45-degree axis, and the center of the 135-degree axis exactly coincide, so the centers of the four axes are assembled at the same point. In the first to eighth modules, each module is equidistant from the center.
The overlay mark of the present embodiment can reduce the number of times of overlay mark analysis, and can prevent quality defects from occurring at an early stage. The present disclosure can confirm the mode of the overlay mark deformation at a time by prohibiting the overcorrection and the overcorrection of the overlay error value.
FIG. 5 is a schematic diagram illustrating the alignment mark structure of the present embodiment undergoing X-axis deformation; that is, if the X axis moves, although the centers of the XY axes of the overlay marks still overlap at one point, the centers of the 45 degree axis and the 135 degree axis are deviated from the centers of the XY axes and spaced apart from each other. By detecting and analyzing the angle and magnitude of such a deviation by the sensor, the number of times of overlay mark analysis can be reduced, and the occurrence of quality defects can be prevented at an early stage. In this embodiment, the method of correcting the overlay error value by over-correction and by error-correction is prohibited, and the distortion of the overlay mark can be confirmed at a time.
FIG. 6 is a schematic diagram illustrating the Y-axis deformation of the overlay mark structure of the present embodiment; that is, if the Y axis is moved, although the centers of the XY axes of the overlay marks are still overlapped at one point, the centers of the 45 degree axis and the 135 degree axis are deviated from the centers of the XY axes and spaced apart from each other. By detecting and analyzing the angle and magnitude of such a deviation by the sensor, the number of times of overlay mark analysis can be reduced, and the occurrence of quality defects can be prevented at an early stage. In this embodiment, the method of correcting the overlay error value by over-correction and by error-correction is prohibited, and the distortion of the overlay mark can be confirmed at a time.
FIG. 7 is a schematic view of the direction and extent of detectable distortion of the overlay mark of the present disclosure; if the X axis moves, although the centers of the XY axes of the overlay mark still overlap at a point, the centers of the 45 degree axis and the 135 degree axis are deviated and spaced from the centers of the XY axes. Similarly, if the Y axis moves, although the centers of the XY axes of the overlay mark are still overlapped at one point, the centers of the 45 degree axis and the 135 degree axis are deviated and spaced from the centers of the XY axes, and therefore, the overlay mark can detect the angle and the magnitude of the mark deviation.
Therefore, by using the overlay mark of the present embodiment, the number of times of overlay mark analysis can be reduced, and the occurrence of quality defects can be prevented at an early stage. In this embodiment, the method of correcting the overlay error value by over-correction and by error-correction is prohibited, and the distortion of the overlay mark can be confirmed at a time.
The above-described embodiments are given in the case where the plurality of pairs of components of the overlay mark are four pairs, however, those skilled in the art will appreciate that the technical effects of the present disclosure can be achieved by using another embodiment, for example, in the case where the plurality of pairs of components of the overlay mark are three pairs. The angle between the axial direction of the third pair of elements and the axial direction of the first pair of elements may be any value between 0 and 180 degrees, and the above only illustrates the angle as being 45 degrees, and in fact, other angles may achieve the object of the present disclosure, such as 30 degrees, 60 degrees, 79 degrees, and so on.
The above-mentioned embodiments are the case where the distance from the center of each of the first to eighth components of the overlay mark is equal, however, those skilled in the art will appreciate that the object of the present disclosure can be achieved by adopting other embodiments, for example, the distance from the center of each of the first to eighth components is not equal.
The above-mentioned embodiments are illustrated in the case where each pair of components of the overlay mark has the same grating shape as its neighboring components, however, those skilled in the art will appreciate that the technical effects of the present disclosure can be achieved when each pair of components of the overlay mark has a different grating shape from its neighboring components.
Fig. 8 is a flowchart of a method for using an overlay mark according to the present disclosure, including the following steps:
s1, detecting the deviation angle and the deviation size of each component in the overlay mark by using a sensor;
and S2, calculating and confirming the overall deviation angle and size of the overlay mark according to the deviation angle and size.
In step S1, the following detection method may be used to implement: the lithographic apparatus includes at least one pattern alignment sensor for receiving radiation projected from the overlay mark onto the reticle. A processor processes signals from the sensor to resolve spatial information in the projected overlay mark for establishing a reference position for measuring a positional relationship between the substrate support and the patterning device, wherein the sensor comprises an array of photo/photon detector elements separated in at least one dimension, such that the sensor and the processor are operable to perform at least a final step of establishing the reference position while keeping the substrate support and the patterning device stationary with respect to each other. The deviation angle and magnitude of each component in the overlay mark can be derived from the difference between the reference position and the measured position.
In step S2, the angle and size of the overall deviation of the overlay mark may be obtained by taking a simple average of the deviations of all the components detected in step S1. Of course, other methods such as linear fitting may be adopted to obtain the overall deviation angle and size of the overlay mark.
The method of using the overlay mark according to the present embodiment can reduce the number of times of overlay mark analysis by using the overlay mark according to the present embodiment, and can prevent quality defects from occurring at an early stage. In this embodiment, the method of correcting the overlay error value by over-correction and by error-correction is prohibited, and the distortion of the overlay mark can be confirmed at a time.
FIG. 9 is a schematic view of a second overlay mark structure of the present disclosure; the overlay mark of the embodiment comprises 3 pairs of assemblies which are symmetrically distributed in a circle center on the circumference, wherein included angles between the axial direction of each pair of assemblies and the axial direction of the adjacent assemblies are all first angles. The first angle may take different settings, such as 30 degrees, 45 degrees, 60 degrees, etc. The following examples illustrate preferred embodiments of the present disclosure, taking 45 degrees as an example.
As shown in fig. 4, the overlay mark includes 3 groups (6) of components, which are respectively located in 6 directions of 0 degree, 90 degree, 135 degree, 180 degree, 270 degree, 315 degree clockwise rotation in the positive direction of the X-axis, including: a first component (0 degrees) located in a first region of the overlay mark, wherein the first component comprises a plurality of gratings extending in a first direction (a direction parallel to the Y-axis); a second assembly (the X-axis is rotated clockwise by 90 degrees) located in a second region of the overlay mark, wherein the second assembly comprises a plurality of gratings extending in a second direction (a direction parallel to the X-axis) perpendicular to the first direction; a third component (135 degrees) located in a third region of the overlay mark, wherein the third component comprises a plurality of gratings extending in a third direction (a direction 135 degrees from the positive X-axis direction); a fourth assembly (180 degrees clockwise rotation of the X-axis) located in a fourth region of the overlay mark, wherein the fourth assembly comprises a plurality of gratings extending in a fourth direction (a direction parallel to the Y-axis); and a fifth component (270 degrees clockwise rotation of the X-axis) located in a fifth region of the overlay mark, wherein the fifth component comprises a plurality of gratings extending in a fifth direction (a direction parallel to the X-axis); a sixth component (325 degrees) located in a sixth region of the overlay mark, wherein the sixth component comprises a plurality of gratings extending in a sixth direction (135 degrees from the positive X-axis direction).
In this overlay mark, the center of the X-axis, the center of the Y-axis, and the center of the 45 degree axis exactly coincide, so the centers of the four axes are assembled at the same point. Each of the first to sixth modules is located at the same distance from the center.
The overlay mark of the present embodiment can reduce the number of times of overlay mark analysis, and can prevent quality defects from occurring at an early stage. The present disclosure can confirm the mode of the overlay mark deformation at a time by prohibiting the overcorrection and the overcorrection of the overlay error value.
Fig. 10 is a schematic view of a third overlay mark structure of the present disclosure. The alignment marks of this embodiment are arranged in a manner substantially the same as that shown in FIG. 9, except that each element of the third set of alignment marks is spaced farther from the center than each element of the first and second sets of alignment marks, and each element of the third set of alignment marks is spaced from the center by a different distance. Further details are not described herein.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to fall within the scope of the present disclosure.
Claims (10)
1. An overlay mark for a semiconductor device, the overlay mark comprising a first pair of components and a second pair of components in cross symmetry with respect to a center,
the overlay mark further comprises at least one third pair of members, two members of the third pair being symmetrically distributed with respect to the center.
2. The overlay mark according to claim 1,
the axial included angle between the axial direction of the third pair of components and the axial direction of the first pair of components is any value between 0 and 180 degrees.
3. The overlay mark according to claim 2,
and the axial included angle between the axial direction of the third pair of components and the axial direction of the first pair of components is 45 degrees.
4. The overlay mark according to claim 2 or 3,
each of the first and second pairs of components is equidistant from the center.
5. The overlay mark according to claim 4,
each of the first, second, and third pairs of components is equidistant from the center.
6. The overlay mark according to claim 2 or 3,
the overlay mark further comprises at least one fourth pair of members, two members of the fourth pair being symmetrically distributed with respect to the center.
7. The overlay mark of claim 6,
the axial included angle between the axial direction of the fourth pair of components and the axial direction of the first pair of components is 135 degrees.
8. The overlay mark according to claim 6 or 7,
each of the first, second, third, and fourth pairs of components is equidistant from the center.
9. The overlay mark according to claim 7,
each component in the first pair of components, the second pair of components, the third pair of components and the fourth pair of components is a grating.
10. A method of using the overlay mark of any of claims 1-9, comprising:
detecting a deviation angle and magnitude of each component in the overlay mark using a sensor;
and calculating and confirming the integral deviation angle and size of the overlay mark according to the deviation angle and size.
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| CN202010739629.3A CN114005810A (en) | 2020-07-28 | 2020-07-28 | Overlay mark of semiconductor device and method of using the same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN120928660A (en) * | 2025-10-15 | 2025-11-11 | 合肥晶合集成电路股份有限公司 | Overlay mark and method for correcting overlay accuracy measurement accuracy |
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| US20070008533A1 (en) * | 2000-08-30 | 2007-01-11 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| CN111158217A (en) * | 2020-01-02 | 2020-05-15 | 长江存储科技有限责任公司 | A method and system for determining overlay deviation |
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| US5498500A (en) * | 1993-12-27 | 1996-03-12 | Hyundai Electronics Industries Co., Ltd. | Overlay measurement mark and method of measuring an overlay error between multi patterns in a semiconductor device using the measurement mark |
| US20070008533A1 (en) * | 2000-08-30 | 2007-01-11 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| CN111324004A (en) * | 2018-12-14 | 2020-06-23 | 夏泰鑫半导体(青岛)有限公司 | Mask and overlay error measuring method |
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| CN120928660A (en) * | 2025-10-15 | 2025-11-11 | 合肥晶合集成电路股份有限公司 | Overlay mark and method for correcting overlay accuracy measurement accuracy |
| CN120928660B (en) * | 2025-10-15 | 2026-02-03 | 合肥晶合集成电路股份有限公司 | Overlay mark and method for correcting overlay accuracy measurement accuracy |
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