CN103928300A - Bonding method based on multi-field coupling - Google Patents
Bonding method based on multi-field coupling Download PDFInfo
- Publication number
- CN103928300A CN103928300A CN201410145672.1A CN201410145672A CN103928300A CN 103928300 A CN103928300 A CN 103928300A CN 201410145672 A CN201410145672 A CN 201410145672A CN 103928300 A CN103928300 A CN 103928300A
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- bonding method
- bonding
- temperature
- method based
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000008878 coupling Effects 0.000 title claims abstract description 14
- 238000010168 coupling process Methods 0.000 title claims abstract description 14
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000004070 electrodeposition Methods 0.000 claims abstract description 3
- 230000000694 effects Effects 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a bonding method based on multi-field coupling. The bonding method includes the steps that a metal film is prepared on a substrate to serve as a base, a nanometer metal needle cone structure is prepared on the surface of the metal base through an electrochemical deposition method to serve as a bonding layer, under the certain temperature and pressure conditions, the metal base is connected with a constant current pulse power supply, the power supply is switched off after a period of time, the metal base is kept for certain time under the constant temperature and pressure conditions, the current crowding and electromigration effects between nanometer interfaces are utilized, local joule heat is generated, diffusion among atoms is facilitated, and therefore low-temperature solid bonding can be achieved. The bonding method is simple in process and convenient to operate, process reliability is enhanced under the low temperature and pressure conditions, and the bonding method has application prospect in the fields of three-dimensional packaging, microsystem manufacturing and the like.
Description
Technical field
The invention belongs to micro-nano system and manufacture field, particularly relate to a kind of bonding method based on many couplings.
Background technology
Along with the development of microelectric technique, circuit level is more and more higher, and function is more and more, and device size is more tired less, makes Electronic Encapsulating Technology just excessive to three-dimensional from two dimension, shortens whereby interconnect length, reduces the signal of telecommunication and postpones, boost device integrated level.Bonding is to build multilayer chiop structure, realizes the critical process of three-dimension packaging, is also the key link that ensures device Performance And Reliability.
At present, in order to make to realize reliable bond between disk, the processes such as silicon-Si direct bonding, silicon-glass anodic bonding, scolder bonding and metal-metal thermocompression bonding have been developed.Wherein, in the middle of two kinds of methods of silicon-Si direct bonding, silicon-glass anodic bonding, do not relate to filler, but the former bonding temperature is more than 800 degrees Celsius, the latter's voltage is more than 400V, and this high temperature high voltage environment tends to affect the performance of device.The basic principle of scolder bonding and metal-metal thermocompression bonding method is to carry out bonding to reduce bonding temperature at two bonding radical basal surfaces filling scolders or simple metal material again, the former utilizes the low melting point of scolder to bond, but easily introduce and pollute, and bonding reliability is not high; The latter utilizes the counterdiffusion between atomic layer to realize solid-state bonding under hot pressing environment, but current thermocompression bonding technique generally 300 ℃, more than 10MPa, for life-span, the reliability of device, there is larger impact.
Nano-interface structure has scale effect and special electrical effects, its fusing point is often much lower compared with body material, and after the energising of nanometer contact interface, meeting generation current concentration effect and electromigration effect, the former produces local joule heat, and the latter promotes the diffusion of atom.Given this, between at the bottom of bonding radical, construct nanostructure as bonded layer, and apply power, heat and electric current and carry out multiple physical field coupling, can effectively reduce the temperature and pressure of thermocompression bonding.
Summary of the invention
The object of the present invention is to provide a kind of bonding method based on many couplings, by bonding face Nanostructure fabrication as bonded layer, and apply the multiple physical field coupling of power, heat, electricity, reduce the temperature and pressure of thermocompression bonding.
A kind of bonding method based on many couplings that the present invention announces, on substrate, prepare layer of metal film as substrate, by the method for electrochemical deposition, in metal substrate surface, prepare nano metal pin wimble structure as bonded layer afterwards, finally under uniform temperature and pressure condition, metallic substrates is connected to constant-current pulse power supply, energising continues for some time rear deenergization, then constant temperature and pressure maintenance certain hour, can realize low-temperature thermocompression bonding.
Further, nano metal pin wimble structure diameter of the present invention is less than 500nm.
Further, thermocompression bonding pressure 1-5MPa of the present invention, temperature 100-200 ℃, constant temperature and pressure duration 20-40 minute.
Further, constant-current pulse source current amplitude of the present invention is less than 100 amperes, pulsewidth 50-150 millisecond, and frequency is greater than 50 hertz, 30-300 second conduction time.
The present invention is based on the special scale effect of nano-interface, current crowding effect, electromigration effect, under the coupling of power electric heating multiple physical field, realize the thermocompression bonding technique of low-temp low-pressure.The method is simple to operate, compatible with microelectronic technique, in fields such as micro-system encapsulation, integrated optoelectronic devices, has wide application prospect.
Accompanying drawing explanation
Fig. 1 is the bonding technology schematic diagram that the present invention is based on many couplings: wherein 1 is metal level, and 2 is substrate, and 3 is nano metal pin wimble structure, and 4 is pressure, and 5 is hot plate.
embodiment
As shown in Figure 1, the key step of the specific embodiment of the invention comprises:
(1) adopt standard RCA technique to clean silicon substrate 2, then by sputtering technology plated metal nickel 1(Ni on substrate) 500nm.
(2) oil removing and processing of rust removing are carried out in the substrate of being prepared by (1), be placed in electroplating solution (cupric sulfate pentahydrate 1.5mol/L, copper nitrate 0.2mol/L, ethylenediamine 2 mol/L, boric acid 0.3 mol/L, additive SPS15ppm, PEG1000ppm, JGB40ppm, 30 ℃ of solution temperatures, pH value 5.0), and using base material as negative electrode, using copper coin or insoluble pole plate as anode, and make substrate, copper coin and electroplating power supply form loop by wire.By electroplating power supply, substrate is implemented to direct current (2A/dm2), electroplating time is 180 seconds, forms nano metal pin wimble structure layer 3.
(3) structure two (2) being formed, is placed between hot plate 5, applies 2MPa pressure, and temperature is 150 degrees Celsius, connects constant-current pulse power supply between Ni metal level, 10 amperes of current amplitudes, 100 milliseconds of pulsewidths, 5000 hertz of frequencies, 150 seconds conduction time.
(4) keep constant temperature and pressure 30 minutes, complete bonding technology.
Claims (4)
1. the bonding method based on many couplings, it is characterized in that preparing layer of metal film as substrate on substrate, by the method for electrochemical deposition, in metal substrate surface, prepare nano metal pin wimble structure as bonded layer afterwards, finally under uniform temperature and pressure condition, metallic substrates is connected to constant-current pulse power supply, energising continues for some time rear deenergization, then constant temperature and pressure keeps certain hour.
2. a kind of bonding method based on many couplings as claimed in claim 1, is characterized in that nano metal pin wimble structure diameter is less than 500nm.
3. a kind of bonding method based on many couplings as claimed in claim 1, is characterized in that applied pressure 1-5MPa, temperature 100-200 ℃, constant temperature and pressure duration 20-40 minute.
4. a kind of bonding method based on many couplings as claimed in claim 1, is characterized in that constant-current pulse source current amplitude is less than 100 amperes, pulsewidth 50-150 millisecond, and frequency is greater than 50 hertz, 30-300 second conduction time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410145672.1A CN103928300B (en) | 2014-04-14 | 2014-04-14 | A kind of bonding method based on multi-scenarios method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410145672.1A CN103928300B (en) | 2014-04-14 | 2014-04-14 | A kind of bonding method based on multi-scenarios method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103928300A true CN103928300A (en) | 2014-07-16 |
| CN103928300B CN103928300B (en) | 2016-06-01 |
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| CN201410145672.1A Expired - Fee Related CN103928300B (en) | 2014-04-14 | 2014-04-14 | A kind of bonding method based on multi-scenarios method |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449448A (en) * | 2016-11-29 | 2017-02-22 | 河南省科学院应用物理研究所有限公司 | Low-temperature bonding method for integrated packaging of devices |
| CN106449451A (en) * | 2016-11-29 | 2017-02-22 | 河南省科学院应用物理研究所有限公司 | Metallic interface bonding method based on nano structure |
| CN106744665A (en) * | 2016-11-29 | 2017-05-31 | 河南省科学院应用物理研究所有限公司 | A kind of interconnecting method of micro-system three-dimension packaging |
| CN111223766A (en) * | 2018-11-23 | 2020-06-02 | 上海新微技术研发中心有限公司 | Eutectic bonding method |
| CN111217324A (en) * | 2018-11-27 | 2020-06-02 | 中科院微电子研究所昆山分所 | Anodic bonding method |
| CN111584378A (en) * | 2019-02-19 | 2020-08-25 | 中科院微电子研究所昆山分所 | A kind of plug-in thermocompression bonding method |
| CN112382717A (en) * | 2020-11-19 | 2021-02-19 | 郑州大学 | Thermoelectric device packaging interface and connecting method thereof |
| CN119626914A (en) * | 2025-02-13 | 2025-03-14 | 江苏中科智芯集成科技有限公司 | Low temperature bonding method for chips |
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| US6989325B2 (en) * | 2003-09-03 | 2006-01-24 | Industrial Technology Research Institute | Self-assembled nanometer conductive bumps and method for fabricating |
| CN101200126A (en) * | 2007-12-12 | 2008-06-18 | 哈尔滨工业大学 | A kind of thermal barrier coating and preparation method thereof |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449448A (en) * | 2016-11-29 | 2017-02-22 | 河南省科学院应用物理研究所有限公司 | Low-temperature bonding method for integrated packaging of devices |
| CN106449451A (en) * | 2016-11-29 | 2017-02-22 | 河南省科学院应用物理研究所有限公司 | Metallic interface bonding method based on nano structure |
| CN106744665A (en) * | 2016-11-29 | 2017-05-31 | 河南省科学院应用物理研究所有限公司 | A kind of interconnecting method of micro-system three-dimension packaging |
| CN106449448B (en) * | 2016-11-29 | 2019-05-07 | 河南省科学院应用物理研究所有限公司 | A kind of low-temperature bonding method for device integration packaging |
| CN106449451B (en) * | 2016-11-29 | 2019-05-07 | 河南省科学院应用物理研究所有限公司 | A kind of bonding method of the metal interface using nanostructure |
| CN111223766A (en) * | 2018-11-23 | 2020-06-02 | 上海新微技术研发中心有限公司 | Eutectic bonding method |
| CN111217324A (en) * | 2018-11-27 | 2020-06-02 | 中科院微电子研究所昆山分所 | Anodic bonding method |
| CN111584378A (en) * | 2019-02-19 | 2020-08-25 | 中科院微电子研究所昆山分所 | A kind of plug-in thermocompression bonding method |
| CN111584378B (en) * | 2019-02-19 | 2022-07-12 | 昆山微电子技术研究院 | Plug-in type hot-press bonding method |
| CN112382717A (en) * | 2020-11-19 | 2021-02-19 | 郑州大学 | Thermoelectric device packaging interface and connecting method thereof |
| CN119626914A (en) * | 2025-02-13 | 2025-03-14 | 江苏中科智芯集成科技有限公司 | Low temperature bonding method for chips |
| CN119626914B (en) * | 2025-02-13 | 2025-06-17 | 江苏中科智芯集成科技有限公司 | Low temperature bonding method for chips |
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