CN103913687B - Groove MOS device Dislocations type analysis for current leakage method - Google Patents
Groove MOS device Dislocations type analysis for current leakage method Download PDFInfo
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- CN103913687B CN103913687B CN201310003710.5A CN201310003710A CN103913687B CN 103913687 B CN103913687 B CN 103913687B CN 201310003710 A CN201310003710 A CN 201310003710A CN 103913687 B CN103913687 B CN 103913687B
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000004458 analytical method Methods 0.000 title claims abstract description 35
- 208000036829 Device dislocation Diseases 0.000 title claims abstract description 12
- 230000002950 deficient Effects 0.000 claims abstract description 35
- 230000007547 defect Effects 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 6
- 238000004904 shortening Methods 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 4
- 239000000523 sample Substances 0.000 description 35
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001815 facial effect Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
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Abstract
The invention discloses a kind of groove MOS device Dislocations type analysis for current leakage method, including step: using EMMI to analyze method and obtain defective locations, defective locations corresponds to luminous point, control EMMI analysis condition and make the diameter of luminous point less than or equal to 1.5 microns；Using FIB method to prepare TEM sample at defective locations, the thickness of the center of TEM sample and the center superposition of defective locations and TEM sample is more than or equal to the diameter of the luminous point at defective locations；TEM sample is carried out tem analysis.The electric leakage that the present invention can cause for dislocation was lost efficacy, it is achieved more rapid position accurately and is analyzed to identify.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit method of manufacturing technology, particularly relate in a kind of groove MOS device
Dislocation type analysis for current leakage method.
Background technology
Grid array in groove MOS device is made up of groove, is by Semiconductor substrate such as silicon at groove
Substrate is formed after performing etching.Can form dislocation defects in groove MOS device, this dislocation defects can cause the generation of electric leakage.
When groove MOS device presence bit shift is leaked electricity, need find out the particular location of dislocation and dislocation is analyzed.Existing groove
MOS device Dislocations type analysis for current leakage method includes step:
The first step, carry out EMMI(Emission Microscope, illuminating microscope at failure characteristics point) location.
EMMI: produced after nonequilibrium state in a semiconductor material by exciting of certain forms, have electronics from upper state
The transition of energy state on earth produces.Radiative process therein has photon and launches, and light emission microscope is by types such as special CCD
Probe can catch these luminescences, forms luminous picture.And superposition enters the light emission picture of device, form the image that can position defect.
As it is shown in figure 1, be that existing method positions schematic diagram at failure characteristics point EMMI；Semiconductor substrate 101 is formed
There is groove 102, when Semiconductor substrate 101 exists the failure characteristics point that dislocation defects produces, can after carrying out EMMI analysis
Forming luminous point 103 at dislocation defective locations, it is micro-that the diameter of the luminous point 103 when EMMI analyzes in existing method is both greater than 3
Rice.
Second step, FIB(Focused Ion Beam, focused ion bundle Electronic Speculum) fixed point preparation 100nm left and right thickness TEM sample
Product.
FIB: clash into sample surfaces as incoming particle (or being primary ions) with the gallium positive ion beam after focusing on, by receiving
Collection secondary electron imaging, big due to the atomic weight of gallium ion again, after acceleration, kinetic energy is big, so there being good ise function,
Most common use has section fine cut, imaging (including voltage contrast picture), TEM sample preparation, circuit reparation etc., transmission electron microscope
Sample preparation function application ise effect, preparing a thickness on sample is that the thin slice of 100 ran is for analyzing.
3rd step, TEM sample is carried out TEM(Transmission Electron Microscope, transmission electron microscopy
Mirror) constructed observation.
TEM: when sample is sufficiently thin, high energy incident electron will penetrate sample, and carrying of these transmitted electrons is filled very much
The sample information divided, just can realize the observational study to sample by transmitted electron imaging.The process of imaging is then heated to height
Electronics launched by the filament of temperature, and electronics penetrates under action of high voltage at a terrific speed, and electronics is polymerized to the thinnest electricity by condenser lens
Son bundle, penetrates on sample；Electron beam, through entering object lens after sample, is imaged on the object plane of projection lens by object lens, intermediate mirror,
This is intermediary image；By projection lens, intermediary image is amplified the most again, project on fluorescent screen, form final picture.
There are the following problems for existing method:
1, during the EMMI in the first step analyzes, leakage point of electricity i.e. luminous point 103 is excessive, and i.e. the diameter dimension of luminous point 103 is often
It is greater than the size of dislocation defects of reality, can not quickly and the location realizing dislocation defects of entirely accurate, thus can shadow
Ring speed and the precision of unitary analysis.
2, the thickness of the TEM sample formed in second step is about 100nm, and this thickness tends not to include whole position completely
Wrong defect does not even include dislocation defects, so that the limitation that follow-up tem observation is is big, so that leaking through or cannot be comprehensive
Solve defect information.As in figure 2 it is shown, be the TEM photo missing dislocation defects in existing method after tem observation；Do not observe in fig. 2
To dislocation defects.As it is shown on figure 3, be the TEM photo of obtaining portion partial dislocation defect after tem observation in existing method；At dotted line frame
Dislocation defects the shortest and the smallest is observed in 104.
Summary of the invention
The technical problem to be solved is to provide a kind of groove MOS device Dislocations type analysis for current leakage method, pin
The electric leakage that causes dislocation was lost efficacy, and can realize more rapid positioning accurately and being analyzed to identify.
For solving above-mentioned technical problem, the groove MOS device Dislocations type analysis for current leakage method that the present invention provides, its feature
It is, comprises the steps:
Step one, employing EMMI analyze method and obtain defective locations, described defective locations pair in groove MOS device chip
EMMI analysis condition should be controlled make the diameter of the luminous point at described defective locations be less than or equal to 1.5 microns in luminous point.
Step 2, FIB method is used to prepare TEM sample at described defective locations, the center of described TEM sample and described
The center superposition of defective locations and the thickness of described TEM sample are more than or equal to the diameter of the luminous point at described defective locations, institute
The cross section stating TEM sample is vertical with the crystal plane direction of the groove of described groove MOS device, and the crystalline substance in the cross section of described TEM sample
Facial index belongs to family of crystal planes { 100}.
Step 3, described TEM sample is carried out tem analysis.
Further improve and be, when EMMI analysis condition described in step one includes front observation, voltage, electric current and daylighting
Between, by reduce voltage, electric current and when shortening described daylighting the diameter of luminous point at defective locations described in chien shih reduce also
Until the diameter of the luminous point at described defective locations is less than or equal to 1.5 microns.
Further improving is to control the reduction electric current in described EMMI analysis condition must ensure that electric current is in leakage simultaneously
Without in the consecutive variations region of flex point in the middle of electricity curve.
Further improve and be, when making described daylighting after controlling the shortening described daylighting time in described EMMI analysis condition
Between minimum to 1 second.
Further improving is that the thickness of TEM sample described in step 2 is 0.5 micron to 1.5 microns.
The present invention is by making the diameter of luminous point be set smaller than, equal to 1.5 microns, to make reflective spot in analyzing at EMMI
Diameter and the size coupling of dislocation defects good, it is thus possible to realize more accurately and faster positioning dislocation defects；This
Invention, during preparing TEM sample by FIB method, makes the center of TEM sample and the center superposition of defective locations and makes TEM sample
The thickness of product is more than or equal to the diameter of luminous point, it is possible to realize the comprehensive analysis to dislocation defects in follow-up tem observation.So
The present invention can realize more accurately and fast, the analysis of comprehensive dislocation defects, greatly facilitates the failure analysis of product, helps to add
Fast process improving, products application Optimization Progress are significant to performance, the q&r of improving product.
Accompanying drawing explanation
The present invention is further detailed explanation with detailed description of the invention below in conjunction with the accompanying drawings:
Fig. 1 is that existing method positions schematic diagram at failure characteristics point EMMI；
Fig. 2 is the TEM photo missing dislocation defects in existing method after tem observation；
Fig. 3 is the TEM photo of obtaining portion partial dislocation defect after tem observation in existing method；
Fig. 4 is embodiment of the present invention method flow diagram；
Fig. 5 is that in embodiment of the present invention method, failure characteristics point EMMI positions schematic diagram；
Fig. 6 is the electric leakage curve in embodiment of the present invention method at defective locations；
Fig. 7 is to use FIB method to prepare TEM sample photo in embodiment of the present invention method；
Fig. 8 is the TEM photo of the dislocation defects obtained after embodiment of the present invention method tem observation.
Detailed description of the invention
As shown in Figure 4, it is embodiment of the present invention method flow diagram；Embodiment of the present invention groove MOS device Dislocations type leaks
Electricity analytical method comprises the steps:
Step one, employing EMMI analyze method and obtain defective locations in groove MOS device chip.
As it is shown in figure 5, be that in embodiment of the present invention method, failure characteristics point EMMI positions schematic diagram；In Semiconductor substrate such as
Silicon substrate 1 is formed groove 2, a luminous point 3 can be formed when EMMI analyzes at described defective locations, use described luminescence
Described defective locations is displayed by point 3, and the most described defective locations corresponds to described luminous point 3.
Controlling EMMI analysis condition makes the diameter of the luminous point 3 at described defective locations be less than or equal to 1.5 microns.Described
EMMI analysis condition includes front observation, voltage, electric current and daylighting time, adopts described in reduction voltage, electric current and shortening
The diameter of the luminous point 3 at defective locations described in light time chien shih reduces and until the diameter of luminous point 3 at described defective locations
Less than or equal to 1.5 microns.
As shown in Figure 6, it is electric leakage curve at defective locations in embodiment of the present invention method；Control described EMMI and analyze bar
Reduction electric current in part must ensure that electric current is in the middle without in the consecutive variations region of flex point of electric leakage curve simultaneously.
Make the described daylighting time minimum to 1 second after controlling the shortening described daylighting time in described EMMI analysis condition.
When the diameter of described luminous point 3 is less than or equal to 1.5 microns, flaw size and the chi of described luminous point 3 can be realized
Very little good correspondence, it is thus possible to realize the quick and precisely location of defective locations.
Step 2, FIB method is used to prepare TEM sample at described defective locations, the center of described TEM sample and described
The center superposition of defective locations and the thickness of described TEM sample are more than or equal to the diameter of the luminous point at described defective locations, institute
The cross section stating TEM sample is vertical with the crystal plane direction of the groove of described groove MOS device, and the crystalline substance in the cross section of described TEM sample
Facial index belongs to family of crystal planes { 100}.
The thickness of described TEM sample is 0.5 micron to 1.5 microns.As it is shown in fig. 7, be that embodiment of the present invention method is adopted
TEM sample photo is prepared by FIB method；Showing two TEM sample in Fig. 7, the thickness of TEM sample 4 is 1.5 microns, TEM sample
The thickness of product 5 is 0.5 micron.
Step 3, described TEM sample is carried out tem analysis.As shown in Figure 8, after being embodiment of the present invention method tem observation
The TEM photo of the dislocation defects obtained.It is clear that be positioned in dotted line frame 6 dislocation defects in TEM photo.
So the embodiment of the present invention can realize more accurately and fast, the analysis of comprehensive dislocation defects, the inefficacy greatly facilitating product divides
Analysis, helps to accelerate process improving, products application Optimization Progress, significant to performance, the q&r of improving product.
Above by specific embodiment, the present invention is described in detail, but these have not constituted the limit to the present invention
System.Without departing from the principles of the present invention, those skilled in the art it may also be made that many deformation and improves, and these also should
It is considered as protection scope of the present invention.
Claims (4)
1. a groove MOS device Dislocations type analysis for current leakage method, it is characterised in that comprise the steps:
Step one, employing EMMI analyze method and obtain defective locations in groove MOS device chip, and described defective locations corresponds to
Luminous point, controls EMMI analysis condition and makes the diameter of the luminous point at described defective locations be less than or equal to 1.5 microns；
Described EMMI analysis condition includes front observation, voltage, electric current and daylighting time, by reducing voltage, electric current and contracting
During short described daylighting, the diameter of luminous point at defective locations described in chien shih reduces and until luminous point at described defective locations
Diameter less than or equal to 1.5 microns；
Step 2, employing FIB method prepare TEM sample at described defective locations, the center of described TEM sample and described defect
The center superposition of position and the thickness of described TEM sample are more than or equal to the diameter of the luminous point at described defective locations, described TEM
The cross section of sample is vertical with the crystal plane direction of the groove of described groove MOS device, and the indices of crystallographic plane in the cross section of described TEM sample
Belong to family of crystal planes { 100}；
Step 3, described TEM sample is carried out tem analysis.
2. groove MOS device Dislocations type analysis for current leakage method as claimed in claim 1, it is characterised in that: control described
Reduction electric current in EMMI analysis condition must ensure that electric current is in the middle consecutive variations district without flex point of electric leakage curve simultaneously
In territory.
3. groove MOS device Dislocations type analysis for current leakage method as claimed in claim 1, it is characterised in that: control described
Make the described daylighting time minimum to 1 second after the shortening described daylighting time in EMMI analysis condition.
4. groove MOS device Dislocations type analysis for current leakage method as claimed in claim 1, it is characterised in that: institute in step 2
The thickness stating TEM sample is 0.5 micron to 1.5 microns.
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| CN201310003710.5A CN103913687B (en) | 2013-01-06 | 2013-01-06 | Groove MOS device Dislocations type analysis for current leakage method |
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| CN201310003710.5A CN103913687B (en) | 2013-01-06 | 2013-01-06 | Groove MOS device Dislocations type analysis for current leakage method |
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| CN103913687A CN103913687A (en) | 2014-07-09 |
| CN103913687B true CN103913687B (en) | 2016-12-28 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104483615B (en) * | 2014-12-24 | 2017-10-24 | 上海华虹宏力半导体制造有限公司 | Trench grate MOS device defect verification method |
| CN110987981A (en) * | 2019-11-11 | 2020-04-10 | 中国科学院上海技术物理研究所 | Method for representing correlation between InGaAs detector material defects and device performance |
| CN113447848A (en) * | 2021-06-24 | 2021-09-28 | 深圳市美信咨询有限公司 | Method for positioning electric leakage between PCB holes |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5256877A (en) * | 1989-09-08 | 1993-10-26 | Isis Innovation Limited | Method and apparatus for imaging dislocations in materials using a scanning electron microscope |
| CN1727872A (en) * | 2004-07-29 | 2006-02-01 | 上海华虹Nec电子有限公司 | Method of using ion beam to analyze defective workmanship of metal silicides |
| CN101153833A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for example of transmission electron microscope |
| CN102721697A (en) * | 2012-05-29 | 2012-10-10 | 江西赛维Ldk太阳能高科技有限公司 | Crystal silicon dislocation detection method and system |
| CN102854203A (en) * | 2011-06-28 | 2013-01-02 | 上海华碧检测技术有限公司 | A detection method of dislocation of substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8138066B2 (en) * | 2008-10-01 | 2012-03-20 | International Business Machines Corporation | Dislocation engineering using a scanned laser |
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2013
- 2013-01-06 CN CN201310003710.5A patent/CN103913687B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5256877A (en) * | 1989-09-08 | 1993-10-26 | Isis Innovation Limited | Method and apparatus for imaging dislocations in materials using a scanning electron microscope |
| CN1727872A (en) * | 2004-07-29 | 2006-02-01 | 上海华虹Nec电子有限公司 | Method of using ion beam to analyze defective workmanship of metal silicides |
| CN101153833A (en) * | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for example of transmission electron microscope |
| CN102854203A (en) * | 2011-06-28 | 2013-01-02 | 上海华碧检测技术有限公司 | A detection method of dislocation of substrate |
| CN102721697A (en) * | 2012-05-29 | 2012-10-10 | 江西赛维Ldk太阳能高科技有限公司 | Crystal silicon dislocation detection method and system |
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