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CN103887420A - LED packaging structure and LED manufacturing method - Google Patents

LED packaging structure and LED manufacturing method Download PDF

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Publication number
CN103887420A
CN103887420A CN201410158042.8A CN201410158042A CN103887420A CN 103887420 A CN103887420 A CN 103887420A CN 201410158042 A CN201410158042 A CN 201410158042A CN 103887420 A CN103887420 A CN 103887420A
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substrate
led
led chip
groove
metallic gasket
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黄勇鑫
充国林
袁永刚
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Suzhou Dongshan Precision Manufacturing Co Ltd
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Suzhou Dongshan Precision Manufacturing Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8582Means for heat extraction or cooling characterised by their shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0365Manufacture or treatment of packages of means for heat extraction or cooling

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Abstract

一种LED封装结构及LED制作方法,该封装结构采用较大的金属垫片来固定LED芯片,以此提高对LED芯片的散热能力。并通过在基板表面开设捞槽来增加封装胶与基板的结合面积,以此提高封装胶的结合强度,抵消因扩大金属面积带来的负面影响。同时本发明也针对上述封装结构提出了一种具体的制作方法。

An LED packaging structure and an LED manufacturing method, the packaging structure adopts larger metal spacers to fix the LED chip, so as to improve the heat dissipation capability of the LED chip. In addition, the bonding area of the encapsulation adhesive and the substrate is increased by opening a scoop on the surface of the substrate, so as to improve the bonding strength of the encapsulation adhesive and offset the negative impact of enlarging the metal area. At the same time, the present invention also proposes a specific manufacturing method for the above packaging structure.

Description

一种LED封装结构及LED制作方法A kind of LED package structure and LED manufacturing method

技术领域technical field

本发明属于LED生产制作领域,特别是涉及一种能够提高LED散热效果的封装结构和制作方法。The invention belongs to the field of LED production and manufacture, and in particular relates to a packaging structure and a manufacturing method capable of improving the heat dissipation effect of the LED.

背景技术Background technique

发光二极管(Light Emitting Diode-LED)可以直接把电能转化为光能。LED芯片由两部分组成,一部分是P型半导体,在它里面空穴占主导地位,另一端是N型半导体,主要是电子。当这两种半导体连接起来的时候,它们之间就形成一个“P-N结”。当电流通过导线作用于这个晶片的时候,电子就会被推向P区,在P区里电子跟空穴复合,然后就会以光子的形式发出能量,这就是LED发光的原理。Light Emitting Diode (LED) can directly convert electrical energy into light energy. LED chip is made up of two parts, and a part is P-type semiconductor, and inside it occupies an leading position in hole, and the other end is N-type semiconductor, mainly electron. When these two kinds of semiconductors couple together, between them, just form a "P-N junction". When electric current acts on this chip by wire time, electron will be pushed to P district, and in P district, electron is with hole recombination, then will send energy with the form of photon, the principle of LED luminescence that Here it is.

LED作为一种新型光源,由于具有节能、环保、寿命长等特点已经被日益广泛地应用于照明领域。目前LED发光效率仅能达到10%~20%,其余的80%~90%的能量转化为热能。随着大功率芯片的研制成功,大大提升了LED在照明领域的应用潜力。但同时单位面积也释放出了更多的热量,大功率LED芯片散热问题成了当前LED技术在照明工程中应用的障碍。As a new type of light source, LED has been increasingly widely used in the field of lighting due to its characteristics of energy saving, environmental protection, and long life. At present, the luminous efficiency of LED can only reach 10% to 20%, and the remaining 80% to 90% of the energy is converted into heat energy. With the successful development of high-power chips, the application potential of LED in the field of lighting has been greatly improved. But at the same time, more heat is released per unit area. The heat dissipation problem of high-power LED chips has become an obstacle to the application of current LED technology in lighting engineering.

请参见图1A-1C,目前LED生产工艺通常包括如下几个步骤:取一基材10(此基材材质通常为树脂、陶瓷、玻璃支架等),在基材10上进行固定芯片11,芯片11固定后进行导电线12的焊接,焊接完成后进行压模,压模时将荧光粉与胶水混合物13注入模具行腔内,完成模压成型。Please refer to Figures 1A-1C, the current LED production process usually includes the following steps: take a base material 10 (the material of the base material is usually resin, ceramics, glass bracket, etc.), fix the chip 11 on the base material 10, the chip After the 11 is fixed, the conductive wire 12 is welded. After the welding is completed, the compression molding is performed. During the compression molding, the phosphor powder and glue mixture 13 is injected into the cavity of the mold to complete the compression molding.

在上述方法中,LED芯片与基材固定时,往往会在基材上设置一块金属垫片,用于固定LED芯片的底部。该金属垫片的面积一般与LED芯片的面积相当。LED芯片的热量往往靠该金属垫片传导至基材或外部的散热器件上。然而随着LED功率的提升,这种封装结构面临如下的问题:In the above method, when the LED chip is fixed to the base material, a metal spacer is often arranged on the base material to fix the bottom of the LED chip. The area of the metal spacer is generally equivalent to the area of the LED chip. The heat of the LED chip is often conducted to the base material or an external heat dissipation device through the metal pad. However, with the increase of LED power, this packaging structure faces the following problems:

1.芯片摆放区域的金属垫片面积偏小,降低芯片热传导速率,光能维持率能力降低;1. The area of the metal gasket in the chip placement area is too small, which reduces the heat conduction rate of the chip and reduces the ability to maintain the light energy;

2.若增加金属垫片的面积,封装胶与其结合性能降低,容易分层;2. If the area of the metal gasket is increased, the bonding performance of the encapsulant and it will decrease, and it will be easy to delaminate;

3.正负极完全实现热电分离,热通道完全独立,不与内电路相通。3. The positive and negative poles are completely separated by thermoelectricity, and the thermal channels are completely independent and do not communicate with the internal circuit.

因此,如何解决LED封装结构中,金属垫片的面积与封装胶结合性能之间的矛盾,已经成为业界迫切需要改善的难题。Therefore, how to solve the contradiction between the area of the metal pad and the bonding performance of the packaging adhesive in the LED packaging structure has become a difficult problem that the industry urgently needs to improve.

发明内容Contents of the invention

有鉴于此,本发明的目的在于提出一种新的LED的封装结构及LED制作方法。该封装结构能够允许使用较大面积金属垫片的同时,保证封装胶与基片材料表面的结合性能。In view of this, the purpose of the present invention is to provide a new LED packaging structure and LED manufacturing method. The encapsulation structure can allow the use of a large-area metal gasket while ensuring the bonding performance of the encapsulation glue and the surface of the substrate material.

根据本发明的目的提出的一种LED的封装结构,包括基板、LED芯片和用来将LED芯片封装在基板上的封装胶,所述基板的正面设有固定所述LED芯片用的金属垫片,该金属垫片的面积至少大于所述LED芯片,在该金属垫片的两侧设有两个导电焊点,该两个导电焊点将LED芯片上的正负极导通到位于基板背面的导电金属纹路,所述基板的正面还设有若干捞槽,这些捞槽避开所述金属垫片和两个导电焊点而设。According to the purpose of the present invention, a LED packaging structure is proposed, which includes a substrate, an LED chip and an encapsulant for packaging the LED chip on the substrate, and the front side of the substrate is provided with a metal gasket for fixing the LED chip , the area of the metal spacer is at least larger than the LED chip, and two conductive pads are arranged on both sides of the metal pad, and the two conductive pads conduct the positive and negative poles on the LED chip to the LED chip on the back of the substrate. The conductive metal lines, the front surface of the substrate is also provided with a number of slots, and these slots are provided to avoid the metal pad and the two conductive solder joints.

优选的,所述捞槽的边缘位置设有凹凸结构。Preferably, a concave-convex structure is provided at the edge of the fishing groove.

优选的,所述基板为玻璃、石英、树脂或陶瓷中的一种。Preferably, the substrate is one of glass, quartz, resin or ceramics.

优选的,所述基板的背面还设有散热装置,所述金属垫片贯穿所述基板并与所述散热装置导热接触。Preferably, a heat sink is further provided on the back of the substrate, and the metal pad penetrates through the substrate and is in thermal contact with the heat sink.

优选的,所述基板的两侧还设有用来做电性LED电性能测试的金属电极,该金属电极贯穿基板并与位于基板背面的导电金属纹路连接。Preferably, the two sides of the substrate are also provided with metal electrodes for testing the electrical performance of the LED, and the metal electrodes penetrate the substrate and are connected to the conductive metal lines on the back of the substrate.

同时,本发明还提出了一种具有上述封装结构的LED制作方法,包括步骤:Simultaneously, the present invention also proposes a kind of LED manufacturing method with above-mentioned encapsulation structure, comprises steps:

提供一基板母板,所述基板母板上包括多个金属垫片,所述金属垫片对应一个LED芯片所在的位置,每块金属垫片的两侧都设有导电焊点,在基板背面设有与这些导电焊点连接的导电金属纹路;Provide a substrate motherboard, the substrate motherboard includes a plurality of metal pads, the metal pads correspond to the position of an LED chip, each metal pad is provided with conductive solder points on both sides, and on the back of the substrate There are conductive metal lines connected to these conductive solder points;

在上述基板上开设捞槽,捞槽的位置避开所述金属垫片和导电焊点;setting up a fishing groove on the above-mentioned substrate, and the location of the fishing groove avoids the metal gasket and the conductive solder joint;

将LED芯片固定到金属垫片上,然后进行引线焊接工艺,将LED芯片上的正负极通过导线分别与两个导电焊点连接;Fix the LED chip on the metal pad, and then carry out the wire welding process, and connect the positive and negative poles on the LED chip to the two conductive solder points respectively through wires;

将封装胶通过模压工艺压制到基板正面,并进行固型;Press the encapsulant onto the front of the substrate through a molding process, and perform solidification;

最后,将上述基板母板进行切割工艺,形成一颗颗LED器件。Finally, the above substrate mother board is subjected to a cutting process to form individual LED devices.

优选的,所述捞槽分布在每颗LED的边缘位置和/或金属垫片两侧的中间位置。Preferably, the fishing grooves are distributed on the edge of each LED and/or in the middle of both sides of the metal spacer.

优选的,固型后,所述封装胶为平面形或球形中的一种。Preferably, after curing, the encapsulating glue is one of planar or spherical.

优选的,当基板母板上具有多排LED时,在每两排LED之间设置一条捞槽,这条捞槽同时作为切割工艺时的切割槽。Preferably, when there are multiple rows of LEDs on the substrate motherboard, a scooping groove is provided between every two rows of LEDs, and this scooping groove is also used as a cutting groove in the cutting process.

与现有技术相比,本发明的进步性体现在:Compared with prior art, the progress of the present invention is reflected in:

1.增加芯片散热区金属层面积,芯片直接通过独立散热区,直接从底部散热,散热效果更佳;1. Increase the metal layer area of the chip heat dissipation area, the chip directly passes through the independent heat dissipation area, and directly dissipates heat from the bottom, and the heat dissipation effect is better;

2.基板非金属区域捞槽,增加外封胶与基材结合力,提升功率时不易分层。2. The non-metal area of the substrate is slotted to increase the bonding force between the outer sealant and the substrate, and it is not easy to delaminate when the power is increased.

附图说明Description of drawings

为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.

图1A-1C是现有的LED制作方法的流程示意图。1A-1C are schematic flow charts of a conventional LED manufacturing method.

图2是本发明第一实施方式下的单颗LED封装结构的结构示意图。Fig. 2 is a schematic structural view of a single LED package structure in the first embodiment of the present invention.

图3是本发明第二实施方式中封装结构的基板俯视图。FIG. 3 is a top view of the substrate of the package structure in the second embodiment of the present invention.

图4A-4B是本发明制作方法中基板母板的结构示意图。4A-4B are structural schematic diagrams of the substrate mother board in the manufacturing method of the present invention.

具体实施方式Detailed ways

正如背景技术中所述,传统的LED封装结构中,用来固定LED芯片的金属垫片面积过小,随着LED芯片功率的提升,该小面积的金属垫片已经不足以给LED芯片散热,最终导致LED发光效率的降低。然而,如果单纯的提高该金属垫片的面积,又会使得封装胶与该金属垫片的接触面积增加,与基板的有效粘合面积减少。在LED工作时,金属垫片受热发烫,容易使得其上的封装胶的粘合力下降并导致脱胶。As mentioned in the background technology, in the traditional LED packaging structure, the area of the metal spacer used to fix the LED chip is too small. With the increase of the power of the LED chip, the small area of the metal spacer is not enough to dissipate heat for the LED chip. Eventually lead to the reduction of LED luminous efficiency. However, if the area of the metal pad is simply increased, the contact area between the encapsulant and the metal pad will increase, and the effective bonding area with the substrate will decrease. When the LED is working, the metal gasket is heated and hot, which easily reduces the adhesion of the encapsulation glue on it and leads to degumming.

因此。本发明设计了一种不仅能够提高LED芯片下方的金属垫片面积的封装结构,而且该封装结构还能解决金属垫片扩大之后,封装胶结合能力下降的难题。其主要思路是,在基板的封装面上,除却金属垫片所在区域和焊点所在区域之外,开设捞槽。这些捞槽的作用是增加封装胶与基板表面的有效接触面积,以此提高封装胶的结合力。这样一来,尽管金属垫片的面积增加了,但是由于保证了封装胶和基底材料之前的有效接触面积,使得封装胶的结合强度得到了保证,大大减少了因封装胶与金属垫片接触导致的脱胶风险,并由于金属垫片面积的增加提高了整颗LED的散热能力。同时,本发明还提出了能够制作上述LED封装结构的制作方法。therefore. The present invention designs a packaging structure that can not only increase the area of the metal gasket under the LED chip, but also solve the problem that the bonding ability of the packaging glue decreases after the metal gasket is enlarged. The main idea is to set up fishing grooves on the packaging surface of the substrate, except for the area where the metal pads and solder joints are located. The role of these grooves is to increase the effective contact area between the encapsulant and the surface of the substrate, thereby improving the bonding force of the encapsulant. In this way, although the area of the metal gasket is increased, the bonding strength of the packaging glue is guaranteed due to the effective contact area between the packaging glue and the base material, which greatly reduces the damage caused by the contact between the packaging glue and the metal gasket. The risk of degumming, and the heat dissipation capacity of the entire LED is improved due to the increase in the area of the metal gasket. At the same time, the present invention also proposes a manufacturing method capable of manufacturing the above-mentioned LED packaging structure.

下面,将对本发明的技术方案做详细描述。Next, the technical solution of the present invention will be described in detail.

请参见图2,图2是本发明第一实施方式下的单颗LED封装结构的结构示意图。如图所示,该LED封装结构包括基板100、LED芯片101和用来将LED芯片101封装在基板100上的封装胶103。所述基板可以是透明材质,比如玻璃、石英、树脂等,也可以是陶瓷、塑料等非透明材质。在基板100的正面(即封装面)设有用来固定LED芯片101用的金属垫片102,该金属垫片102的面积至少大于所述LED芯片101,在该金属垫片102的两侧设有两个导电焊点104,LED芯片101上的正负极分别通过两个导线105与该两个导电焊点104连接。在基板100的背面设有导电金属纹路(图中未示出),该两个导电焊点104穿过基板100并与这些导电金属纹路连接,以用来将LED芯片101上的正负极导通到位于基板100背面的导电金属纹路上,并最终通过这些导电金属纹路与外部的电路连接。Please refer to FIG. 2 . FIG. 2 is a schematic structural diagram of a single LED package structure in the first embodiment of the present invention. As shown in the figure, the LED packaging structure includes a substrate 100 , an LED chip 101 and an encapsulation glue 103 for packaging the LED chip 101 on the substrate 100 . The substrate may be a transparent material, such as glass, quartz, resin, etc., or may be a non-transparent material such as ceramics or plastics. A metal spacer 102 for fixing the LED chip 101 is provided on the front side of the substrate 100 (that is, the packaging surface). The area of the metal spacer 102 is at least larger than that of the LED chip 101. Two conductive pads 104 , the positive and negative poles on the LED chip 101 are respectively connected to the two conductive pads 104 through two wires 105 . Conductive metal lines (not shown) are provided on the back side of the substrate 100, and the two conductive pads 104 pass through the substrate 100 and are connected with these conductive metal lines to connect the positive and negative poles on the LED chip 101. connected to the conductive metal lines on the back of the substrate 100 , and finally connected to external circuits through these conductive metal lines.

金属垫片102和导电焊点104优选为铜材料,当然其它一些具有优良导电性能的金属材料也可以,比如金、银、铁、铝等等。在一种应用中,金属垫片102也可以为贯穿整个基板100的金属块,在该基板100的背面设有专门用来散热的散热器件,比如散热翅片或散热金属片。该金属垫片102通过贯穿基板100形成和散热器件的导热接触,从而将LED芯片上的热量传导至散热器件上进行散热。需要注意的是,在基板100背面的导电金属纹路与散热器件或贯穿过来的金属垫片102之间应避免接触,这样可以保证LED的导热和导电之间的线路分离,互补影响。The metal pad 102 and the conductive pad 104 are preferably made of copper, of course, other metal materials with excellent electrical conductivity are also available, such as gold, silver, iron, aluminum and so on. In one application, the metal spacer 102 may also be a metal block that runs through the entire substrate 100 , and a heat dissipation device specially used for heat dissipation, such as a heat dissipation fin or a heat dissipation metal sheet, is provided on the back of the substrate 100 . The metal spacer 102 passes through the substrate 100 to form a thermal contact with the heat dissipation device, so as to conduct the heat on the LED chip to the heat dissipation device for heat dissipation. It should be noted that contact should be avoided between the conductive metal lines on the back of the substrate 100 and the heat dissipation device or the metal spacer 102 passing through, so as to ensure the separation of the lines between the heat conduction and conduction of the LED and complement each other.

本发明的特殊之处在于:在基板100的正面还设有若干捞槽,比如图示中的捞槽106、107,其中捞槽106开设在基板100的边缘,而捞槽107开设在基板100的中间。对于捞槽开设位置的限定,除了图示的位置之外,还可以有很多种方式,比如开设在中间位置的捞槽可以采用平行于长边的横条式,甚至可以开设多条平行、交叉或弯曲的捞槽,只要满足这些捞槽避开金属垫片102和两个导电焊点104就行。对于捞槽的宽度以及捞槽之间的间距,可以视金属垫片和导电焊点的大小而定,在满足避开的情况下,可以尽可能的增加捞槽在整个表面所占的比例。The special feature of the present invention is that several scooping grooves are provided on the front of the substrate 100, such as the scooping grooves 106 and 107 in the figure, wherein the scooping grooves 106 are set on the edge of the substrate 100, and the scooping grooves 107 are set on the edge of the substrate 100. in the middle. There are many ways to limit the opening position of the fishing trough besides the position shown in the figure. For example, the fishing trough set in the middle position can adopt the horizontal bar type parallel to the long side, or even set up multiple parallel and crossing troughs. Or curved slots, as long as these slots avoid the metal pad 102 and the two conductive solder joints 104 . The width of the grooves and the distance between the grooves can be determined according to the size of the metal pads and conductive solder joints. In the case of avoidance, the proportion of the grooves on the entire surface can be increased as much as possible.

这些开设在表面的捞槽,有效的增加了整个基板100的表面积,这样一来,当封装胶103粘合到基板正面时,其与基板100的有效接触面积增加,不仅可以弥补因金属垫片102面积增加带来的封装胶与基板之间减少的那部分面积,而且通过合理的设置捞槽的宽度和数量,还能比原先多增加一些接触面积,使得封装胶103与基板100之间的结合强度得到提高。由此得到的LED封装结构,在LED芯片工作时,由于底下金属垫片102的面积增加,其散热的能力也得到增加,保证了高功率LED芯片的散热环境,使得LED发光效率得到提升。These grooves opened on the surface effectively increase the surface area of the entire substrate 100. In this way, when the packaging glue 103 is bonded to the front of the substrate, the effective contact area with the substrate 100 increases, which can not only compensate for the The reduced area between the encapsulant 103 and the substrate due to the increase in the area of 102, and by properly setting the width and number of the slots, can increase the contact area more than before, so that the encapsulant 103 and the substrate 100 Bond strength is improved. The thus obtained LED packaging structure, when the LED chip is working, due to the increase in the area of the bottom metal pad 102, its heat dissipation capability is also increased, ensuring a heat dissipation environment for the high-power LED chip, and improving the LED luminous efficiency.

优选的,在该基板的两侧,各设置了一个用来做LED电性能测试的金属电极108。该金属电极108同样贯穿基板100的正反面,同时与位于基板100背面的导电金属纹路连接。在图示所示的方式总,该两个金属电极108设计成半圆弧形,测试时只需用测试夹夹出两侧的金属电极即可。当然该金属电机也可以是其他任意的形状,只要能满足LED的测试需求即可。Preferably, on both sides of the substrate, a metal electrode 108 for testing the electrical performance of the LED is provided. The metal electrodes 108 also penetrate the front and back of the substrate 100 and are connected to the conductive metal traces on the back of the substrate 100 . In the way shown in the figure, the two metal electrodes 108 are designed in a semi-circular arc shape, and only need to clamp out the metal electrodes on both sides with the test clip during testing. Of course, the metal motor can also be in any other shape, as long as it can meet the testing requirements of the LED.

请参见图3,图3是本发明第二实施方式中封装结构的基板俯视图。在这种实施方式中,除了在基板表面开设捞槽之外,在捞槽的边缘位置增加凹凸结构,这些凹凸结构除了图示中的锯齿形之外,还可以是波浪形、方波形或其它规则或不规则的凹凸图形。通过开设这些凹凸结构,可以进一步增加捞槽所能提供的有效接触面积,使得封装胶的结合性能得到提高。Please refer to FIG. 3 . FIG. 3 is a top view of the substrate of the package structure in the second embodiment of the present invention. In this embodiment, in addition to opening grooves on the surface of the substrate, a concave-convex structure is added at the edge of the groove. These concave-convex structures can also be wavy, square or other in addition to the zigzag shape shown in the figure. Regular or irregular concave-convex graphics. By providing these concave-convex structures, the effective contact area provided by the slot can be further increased, so that the bonding performance of the encapsulant can be improved.

下面,再对本发明的LED的制作方法进行详细说明。Next, the manufacturing method of the LED of the present invention will be described in detail.

首先,提供一基板母板,该基板母板上可以制作多颗LED发光器件。如图4A-4B所示,基板母板上已经制作好了多个金属垫片,这些金属垫片对应一个LED芯片所在的位置。每块金属垫片的两侧都设有导电焊点,在基板背面设有与这些导电焊点连接的导电金属纹路。这些金属垫片、导电焊点以及导电金属纹路的制作工艺为LED制作领域的现有技术,在此不再赘述。Firstly, a substrate motherboard is provided, on which a plurality of LED light-emitting devices can be fabricated. As shown in FIGS. 4A-4B , a plurality of metal spacers have been fabricated on the substrate motherboard, and these metal spacers correspond to the position of an LED chip. Both sides of each metal pad are provided with conductive pads, and conductive metal lines connected with these conductive pads are provided on the back of the substrate. The manufacturing process of these metal pads, conductive solder joints and conductive metal lines is the existing technology in the field of LED manufacturing, and will not be repeated here.

在上述基板上开设捞槽,捞槽的位置避开制作好的金属垫片和导电焊点即可。如图4B中所示,捞槽主要分布在每颗LED的边缘位置和/或金属垫片两侧的中间位置。当基板母板上具有多排LED时,可以在每两排LED之间设置一条捞槽,这条捞槽可以作为后续切割工艺时的切割槽。比如图示中的基板母板可制作两排共4颗LED发光器件,可以看到其中一条捞槽的位置位于两排LED器件的中间位置,但是应当理解的是,在后续切割工艺之后,该条捞槽将被分割成两半,且各自成为所述LED器件边缘的捞槽。同样的,如果LED器件的颗数增加,对应的捞槽开设也会增加,但是切割后形成的单颗LED器件,还是大致会具有如图2所示的捞槽分布。具体地捞槽开设可以通过模压工艺、冲压工艺,或者铸模工艺形成。A fishing groove is provided on the above-mentioned substrate, and the location of the fishing groove can avoid the prepared metal gasket and conductive solder joint. As shown in FIG. 4B , the grooves are mainly distributed on the edge of each LED and/or in the middle of both sides of the metal spacer. When there are multiple rows of LEDs on the substrate motherboard, a fishing groove can be provided between every two rows of LEDs, and this fishing groove can be used as a cutting groove in a subsequent cutting process. For example, the substrate motherboard shown in the figure can produce two rows of 4 LED light-emitting devices. It can be seen that one of the slots is located in the middle of the two rows of LED devices. However, it should be understood that after the subsequent cutting process, the The bar gutter will be split in half and each be a gutter for the edge of the LED device. Similarly, if the number of LED devices increases, the opening of corresponding slots will also increase, but a single LED device formed after cutting will roughly have the distribution of slots as shown in Figure 2. Specifically, the opening of the fishing groove can be formed by a molding process, a stamping process, or a casting process.

将LED芯片固定到金属垫片上,然后进行引线焊接工艺,将LED芯片上的正负极通过导线分别与两个导电焊点连接。焊线完成后,电流走向与芯片金属区域隔离,不存在电热通用线路,使得芯片下方区域完全用于散热,提升散热性能。然后将封装胶通过模压工艺压制到基板正面,压模时,正面其他非金属区域全部同封装胶结合,增加结合力,提升功率时,不产生脱层。然后将封装胶固型,固型后封装胶可以是平面形,也可以是球形,通常依照不同应用来选择。这些芯片固定工艺、引线焊接工艺以及封装胶的压模和固型都是现有技术,此处不再赘述。The LED chip is fixed on the metal pad, and then the wire welding process is performed, and the positive and negative poles on the LED chip are respectively connected to two conductive solder points through wires. After the wire bonding is completed, the current direction is isolated from the metal area of the chip, and there is no general-purpose electric circuit, so that the area under the chip is completely used for heat dissipation, improving heat dissipation performance. Then the encapsulation glue is pressed to the front of the substrate through a molding process. During the press molding, all other non-metallic areas on the front are combined with the encapsulation glue to increase the bonding force and prevent delamination when the power is increased. Then the encapsulation glue is solidified, and the encapsulation glue can be flat or spherical after curing, which is usually selected according to different applications. These chip fixing processes, wire bonding processes, and molding and curing of packaging adhesives are all prior art, and will not be repeated here.

最后对上述基板母板进行切割,形成一颗颗LED器件。切割时,可以按照专门的切割线路,避开已经开设的捞槽进行。而在一些具有多排LED的基板母板上,也可以将制作在每排LED中间的捞槽作为切割槽,这样切割之后,该部分的捞槽就成为“半槽”,分布在单颗LED器件的边缘,如图2所示。Finally, the above substrate mother board is cut to form individual LED devices. When cutting, you can follow the special cutting line and avoid the already opened fishing groove. And on some substrate motherboards with multiple rows of LEDs, the slots made in the middle of each row of LEDs can also be used as cutting slots. After cutting, the slots in this part become "half slots" and are distributed in the edge of the device, as shown in Figure 2.

综上所述,本发明提出了一种LED封装结构和LED的制作方法。该封装结构采用较大的金属垫片来固定LED芯片,以此提高对LED芯片的散热能力。并通过在基板表面开设捞槽来增加封装胶与基板的结合面积,以此提高封装胶的结合强度,抵消因扩大金属面积带来的负面影响。To sum up, the present invention proposes an LED packaging structure and a manufacturing method of the LED. The packaging structure adopts a larger metal spacer to fix the LED chip, so as to improve the heat dissipation capability of the LED chip. In addition, the bonding area of the encapsulation adhesive and the substrate is increased by opening a scoop on the surface of the substrate, so as to improve the bonding strength of the encapsulation adhesive and offset the negative impact of enlarging the metal area.

对所公开的实施例的上述说明,使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the present invention will not be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (9)

1. the encapsulating structure of a LED, comprise substrate, LED chip and be used for LED chip to be encapsulated in the packaging plastic on substrate, it is characterized in that: the front of described substrate is provided with the metallic gasket that fixing described LED chip is used, the area of this metallic gasket is at least greater than described LED chip, be provided with two conductive welding spots in the both sides of this metallic gasket, these two conductive welding spots are conducting to the both positive and negative polarity on LED chip in the conducting metal lines that is positioned at substrate back, the front of described substrate is also provided with some grooves that drag for, and these drag for groove and avoid described metallic gasket and two conductive welding spots and establish.
2. encapsulating structure as claimed in claim 1, is characterized in that: described in drag for groove marginal position be provided with concaveconvex structure.
3. encapsulating structure as claimed in claim 1, is characterized in that: described substrate is the one in glass, quartz, resin or pottery.
4. encapsulating structure as claimed in claim 1, is characterized in that: the back side of described substrate is also provided with heat abstractor, and described metallic gasket runs through described substrate and contacts with described heat abstractor heat conduction.
5. encapsulating structure as claimed in claim 1, is characterized in that: the both sides of described substrate are also provided with the metal electrode for doing electrical LED electric performance test, and this metal electrode runs through substrate and is connected with the conducting metal lines that is positioned at substrate back.
6. a LED manufacture method with the encapsulating structure described in claim 1-5 any one, is characterized in that, comprises step:
One substrate motherboard is provided, on described substrate motherboard, comprise multiple metallic gaskets, the position at the corresponding LED chip place of metallic gasket described in each, the both sides of every metallic gasket are all provided with conductive welding spots, are provided with the conducting metal lines being connected with these conductive welding spots at substrate back;
On aforesaid substrate, offer and drag for groove, drag for the position of groove and avoid described metallic gasket and conductive welding spots;
LED chip is fixed on metallic gasket, then carries out wire bonds technique, the both positive and negative polarity on LED chip is connected with two conductive welding spots respectively by wire;
Packaging plastic is pressed into substrate front side by mould pressing process, and carries out solid type;
Finally, aforesaid substrate motherboard is carried out to cutting technique, form a LEDs device.
7. LED manufacture method as claimed in claim 6, is characterized in that: described in drag for groove and be distributed in the marginal position of every LEDs and/or the centre position of metallic gasket both sides.
8. LED manufacture method as claimed in claim 6, is characterized in that: Gu after type, described packaging plastic be planar shaped or spherical in one.
9. LED manufacture method as claimed in claim 6, is characterized in that: in the time having many row LED on substrate motherboard, arrange one and drag for groove, cutting groove when this drags for groove simultaneously as cutting technique between every two row LED.
CN201410158042.8A 2014-04-18 2014-04-18 LED packaging structure and LED manufacturing method Pending CN103887420A (en)

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Application publication date: 20140625