CN103824903A - Substrate processing method for improving emission compensation temperature measurement accuracy or consistency - Google Patents
Substrate processing method for improving emission compensation temperature measurement accuracy or consistency Download PDFInfo
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- CN103824903A CN103824903A CN201210462738.0A CN201210462738A CN103824903A CN 103824903 A CN103824903 A CN 103824903A CN 201210462738 A CN201210462738 A CN 201210462738A CN 103824903 A CN103824903 A CN 103824903A
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- 239000000758 substrate Substances 0.000 title claims abstract description 74
- 238000003672 processing method Methods 0.000 title claims abstract description 9
- 238000009529 body temperature measurement Methods 0.000 title abstract description 3
- 238000005498 polishing Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000012545 processing Methods 0.000 claims abstract description 10
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 abstract description 14
- 238000001514 detection method Methods 0.000 abstract description 2
- 239000000523 sample Substances 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 description 16
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 238000005259 measurement Methods 0.000 description 9
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
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Abstract
一种提高发射补偿测温准确性或一致性的衬底加工方法，涉及LED材料工程技术领域。本发明的方法步骤为：对于探测光波长而透明的衬底，平衬底采用双面抛光处理。将图形化衬底正面图形的表面进行平整和光滑处理，并保持图形结构几何特征的均一性，图形化衬底背面进行再抛光处理。对于探测光波长非透明的衬底，平衬底仅进行正面抛光处理。将图形化衬底正面图形的表面进行平整和光滑处理，并保持图形结构几何特征的均一性。加工后的平衬底或者图形化衬底的弯曲度、翘曲度和总厚度变化均小于15微米。本发明通过对平衬底或者图形化衬底表面的加工处理，使衬底表面均匀性提高，以提升测试精度。
A substrate processing method for improving the accuracy or consistency of emission compensation temperature measurement relates to the technical field of LED material engineering. The method steps of the invention are as follows: for the substrate which is transparent for the detection light wavelength, the flat substrate is treated with double-side polishing. The surface of the front pattern of the patterned substrate is flattened and smoothed, and the uniformity of the geometric characteristics of the pattern structure is maintained, and the back of the patterned substrate is re-polished. For substrates that are not transparent to the wavelength of the probe light, only the front side of the flat substrate is polished. The surface of the pattern on the front side of the patterned substrate is flattened and smoothed, and the uniformity of the geometric characteristics of the pattern structure is maintained. The curvature, warpage and total thickness variation of the processed flat substrate or patterned substrate are all less than 15 microns. The invention improves the uniformity of the substrate surface by processing the surface of the flat substrate or the patterned substrate to improve the test accuracy.
Description
Technical field
The present invention relates to LED field of material engineering technology, particularly can improve the processing method that adopts the substrate using on transmitting offset-type thermometric mode accuracy or conforming LED epitaxial material growth apparatus.
Background technology
Metalorganic chemical vapor deposition (english abbreviation is MOCVD) equipment or technology are that current industrial circle is widely used in the method for manufacturing compound semiconductor.It can extension go out to contain III-V compounds of group on certain backing material, as nitride, phosphide, arsenide etc., and II-VI compounds of group, as the monocrystalline crystal of oxide, sulfide etc.And these materials are wide bandgap semiconductor mostly, there is rich and varied purposes in electronics, photoelectron industry, such as, adopt above-mentioned material to manufacture light-emitting diode, laser diode, photodiode, solar-energy photo-voltaic cell, field-effect transistor, High Electron Mobility Transistor etc.
On MOCVD equipment, temperature control system is one of most important part wherein, and it can roughly be divided into two large modules: temperature-measuring module and temperature control modules.Because under certain pressure conditions, in the time that various reactants are complete, temperature major decision physics, the chemical property such as the phase transformation of material, crystallization degree, micro-structural.In some application scenario, the accuracy of the measurement of temperature control system to reaction temperature and control or consistency are to material quality, parameter yield and product reproducibility important in inhibiting.For example, carry out Multiple Quantum Well (MQW) the epitaxial structure growth of iii-nitride light emitting devices (LED) on MOCVD time, the emission spectrum dominant wavelength of final products LED device can be with the sensitive variation of the synthesis temperature of MQW.Such as the synthesis temperature of MQW changes 1 ℃, the dominant wavelength of LED will change 2～5 nanometer left and right.And LED product to the stepping specification general control of dominant wavelength below ± 2.5 nanometers, can see thus and accurately maybe can weigh the importance of local control MQW synthesis temperature to LED dominant wavelength yield.
In prior art, transmitting offset-type thermometric mode is a kind of temp measuring method common on MOCVD equipment.The entity of this kind of method is called as transmitting offset-type thermometer, and it is the measurement module of temperature control system.Referring to Fig. 1, transmitting offset-type thermometer is positioned at the observation panel position on MOCVD reative cell top, calculates the temperature of target sample by measuring the caloradiance of target sample and reflectivity.Its Computing Principle can be derived by Planck radiation law and Kirchhoff's law of radiation, and expression is as follows:
Wherein,
tfor sample temperature,
λfor the detection wavelength (optical source wavelength while measuring sample reflectivity) of thermometer,
α t for the absorptivity of sample,
e t for the caloradiance of sample under λ wavelength,
c 1 ,
c 2 for constant.
In addition, for wavelength
λbe the sample of non-transparent material, its absorptivity and reflectivity can obtain following relational expression according to law of conservation of energy:
Wherein,
r t for the reflectivity of sample.
Formula
,
the caloradiance of middle sample
e t and reflectivity
r t all obtain by transmitting offset-type thermometer measure, and then pass through formula
obtain the temperature of sample.
Under normal circumstances, the reflectivity of sample surfaces need to use the integrating sphere ability Measurement accuracy of half space, but in MOCVD system, observes the such design of reflectivity of epitaxial wafer but be difficult to realize.A kind of simple approximate way is a reserved observation port above reative cell, collects and observation reflectivity in a certain fixing space multistory angle, also caloradiance is measured simultaneously.But making has certain limitation in this way, and even the surface of epitaxial wafer or substrate sample is in coarse or while being easy to diffuse reflection occurs, the measurement signal of reflectivity by be faint or error larger.Like this " pattern recognition " mistake or the temperature computation that cause testing software are forbidden, are lack of consistency and reproducibility.Only have when sample surfaces is during in ideal mirror, reflectivity is surveyed could obtain maximum signal to noise ratio, and higher precision or the consistency of maintenance.
Summary of the invention
Be suitable for limitation for the transmitting offset-type thermometer existing in above-mentioned prior art, the object of this invention is to provide a kind of transmitting compensation thermometric accuracy or conforming substrate processing method of improving.It improves substrate surface uniformity, to promote measuring accuracy by the processing processing to flat substrate or patterned substrate surface.
In order to reach foregoing invention object, technical scheme of the present invention realizes as follows:
A kind of transmitting compensation thermometric accuracy or conforming substrate processing method of improving, described substrate is the bearing substrate of preparing light-emitting diode product and carry out Material growth.The steps include: that flat substrate adopts twin polishing processing for surveying the transparent substrate of optical wavelength; Smooth and smooth treatment is carried out in the surface of patterned substrate front description, and keep the homogeneity of graphic structure geometric properties, polishing is again carried out at the patterned substrate back side.For surveying the nontransparent substrate of optical wavelength, flat substrate only carries out positive polishing.Smooth and smooth treatment is carried out in the surface of patterned substrate front description, and keep the homogeneity of graphic structure geometric properties.Flat substrate after processing or flexibility, angularity and the total thickness variations of patterned substrate are all less than 15 microns.
In above-mentioned substrate processing method, described graphic structure comprises periodically shape and the physical dimension of unit.
The present invention is owing to having adopted said method, and the substrate of processing through processing more easily forms mirror-reflection, in the time using transmitting offset-type thermometer, can strengthen reflected signal, improves thermometric accuracy, consistency.
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
Accompanying drawing explanation
Fig. 1 is the measurement schematic diagram of launching offset-type thermometer in MOCVD system;
Fig. 2 is for the machining sketch chart of surveying the transparent flat substrate of optical wavelength in the present invention;
Fig. 3 is for the machining sketch chart of surveying the transparent patterned substrate of optical wavelength in the present invention;
Fig. 4 is the reflected light path from the coarse back side of the probing light process substrate of transmitting offset-type thermometer outgoing;
Fig. 5 processes the reflected light path of back substrate from the probing light of transmitting offset-type thermometer outgoing through the present invention.
embodiment
Referring to Fig. 2 and Fig. 3, process steps of the present invention is: for surveying the transparent substrate of optical wavelength, flat substrate adopts twin polishing processing; Smooth and smooth treatment is carried out in the surface of patterned substrate front description, and keep the homogeneity of graphic structure geometric properties, polishing is carried out at the patterned substrate back side again.For surveying the nontransparent substrate of optical wavelength, flat substrate only carries out positive polishing; Smooth and smooth treatment is carried out in the surface of patterned substrate front description, and keep the homogeneity of graphic structure geometric properties.Substrate surface for roughness after polishing is the smaller the better, to be easy to form minute surface transmitting.Graphic structure comprises periodically shape and the physical dimension of unit.
Take 2 inches of graphical sapphire substrates as example, a kind of embodiment of the present invention is described below.
The first step, first prolongs sapphire single-crystal 0.2 ° of drift angle of [0001] c face (deflection m face) direction and cuts into 2 inches of big or small Wafer, and the corresponding plane in flat limit is a face of sapphire structure cell, and flat limit is 30 ° to the subtended angle of c-axis.In addition, the thickness of Wafer is at 420～440 micrometer ranges; Flexibility, angularity and total thickness variations should be less than 15 microns;
Second step, carries out twin polishing processing to sapphire Wafer, and the fineness of polishing is more high better, and surface roughness is the smaller the better.Preferably, the surface roughness after polishing should at least remain on below 0.5 micron;
The 3rd step, selects sapphire front to carry out dry etch process, and making bottom surface diameter is 2.6 microns, is highly 1.65 microns, and the cycle is of a size of pyramid (Pyramid) figure of 3 microns.In this technical process, answer Optimizing Process Parameters to guarantee the geometry homogeneity of dimension of picture and smooth, the evenness of patterned surface.Or increase auxiliary process, adopt physics or chemical method to reduce as far as possible the roughness of patterned surface.
When the graphical sapphire substrate of making through above three steps carries out the growth of nitride LED epitaxial structure in the MOCVD system that adopts transmitting offset-type thermometer, can improve the isoparametric uniformity of dominant wavelength and the consistency of LED epitaxial wafer.
To use epitaxial growth that Sapphire Substrate carries out nitride LED structure on MOCVD as example, in the time that LED epitaxial wafer grows into mqw layer, nitride, Sapphire Substrate and the graphite load plate common combination that is coated with SiC become the thermometric target of transmitting offset-type thermometer.If the optical source wavelength that in thermometer, measurement of reflectivity is used is 930 nanometers, this wavelength light is to nitride, Sapphire Substrate so, and the SiC on stone graphite plate top layer is transparent, and now the GaN surface of approximate minute surface also for the measurement of reflectivity and caloradiance provides advantage.The surface appearance of supposing graphite plate and SiC coating is all even constant, and the situation of substrate surface is by the accuracy in measurement of major effect reflectivity or consistency so.Take flat substrate as example, there is reflection and refraction by three interfaces between air and nitride, nitride and Sapphire Substrate, Sapphire Substrate and air in the light of 930 nanometers.Referring to Fig. 4, in figure, only show the reverberation light path that arrives substrate back, if now the back side of substrate is compared with coarse and while making light generation diffuse reflection, will cause the reflectivity of thermometric target to decline, by aforementioned formula
,
the temperature calculating will be lower than actual value, caused thus measuring temp error.Otherwise if the polishing of substrate back process, the uniformity of substrate back of the body surface reflection situation also improves so thereupon.As shown in Figure 5, more easily form mirror-reflection, so just can strengthen reflected signal, improve temperature measurement accuracy or consistency.Can prove similarly, for surveying the nontransparent substrate of wavelength, the front of flat substrate is carried out polishing or is fully improved the geometrical homogenization of patterned substrate surfacial pattern and smooth surface, evenness also can increase reflectivity signals intensity, improves certainty of measurement or the consistency of reflectivity and temperature simultaneously.
Above-mentioned one exemplary embodiment of the present invention only disclosed.Technological thought for the person skilled of this area according to example of the present invention, change part in specific embodiments and applications, all should belong to protection scope of the present invention.
Claims (2)
1. one kind is improved transmitting compensation thermometric accuracy or conforming substrate processing method, described substrate is the bearing substrate of preparing light-emitting diode product and carry out Material growth, the steps include: that flat substrate adopts twin polishing processing for surveying the transparent substrate of optical wavelength; Smooth and smooth treatment is carried out in the surface of patterned substrate front description, and keep the homogeneity of graphic structure geometric properties, polishing is again carried out at the patterned substrate back side; For surveying the nontransparent substrate of optical wavelength, flat substrate only carries out positive polishing; Smooth and smooth treatment is carried out in the surface of patterned substrate front description, and keep the homogeneity of graphic structure geometric properties.
2. substrate processing method according to claim 1, is characterized in that, described graphic structure comprises periodically shape and the physical dimension of unit.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1717976A1 (en) * | 1988-10-25 | 1992-03-07 | Восточно-Сибирский технологический институт | Temperature control method |
| US5388909A (en) * | 1993-09-16 | 1995-02-14 | Johnson; Shane R. | Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap |
| RU2148802C1 (en) * | 1999-01-27 | 2000-05-10 | Институт физики полупроводников СО РАН | Device for detection of heat radiation |
| US20020098257A1 (en) * | 2001-01-22 | 2002-07-25 | Masaaki Ikeda | Optical device provided with a resin thin film having a micro-asperity pattern and manufacturing method and apparatus of the optical device |
| CN1545140A (en) * | 2001-03-28 | 2004-11-10 | ��ʽ���綫֥ | Substrate temperature measurement method |
| CN1608199A (en) * | 2001-12-26 | 2005-04-20 | 沃泰克工业有限公司 | Method and system for measuring temperature and heat treatment |
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2012
- 2012-11-16 CN CN201210462738.0A patent/CN103824903B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1717976A1 (en) * | 1988-10-25 | 1992-03-07 | Восточно-Сибирский технологический институт | Temperature control method |
| US5388909A (en) * | 1993-09-16 | 1995-02-14 | Johnson; Shane R. | Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap |
| RU2148802C1 (en) * | 1999-01-27 | 2000-05-10 | Институт физики полупроводников СО РАН | Device for detection of heat radiation |
| US20020098257A1 (en) * | 2001-01-22 | 2002-07-25 | Masaaki Ikeda | Optical device provided with a resin thin film having a micro-asperity pattern and manufacturing method and apparatus of the optical device |
| CN1545140A (en) * | 2001-03-28 | 2004-11-10 | ��ʽ���綫֥ | Substrate temperature measurement method |
| CN1608199A (en) * | 2001-12-26 | 2005-04-20 | 沃泰克工业有限公司 | Method and system for measuring temperature and heat treatment |
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