CN103631723B - adjusting circuit and circuit adjusting method - Google Patents

Abstract

The invention discloses a regulating circuit and a method for regulating the circuit. The circuit comprises: an EEPROM and a state machine; an extra storage unit is set in the EEPROM, and the storage address of the storage unit pre-stores the values of the circuit to be adjusted and the state machine in various state values. For the corresponding adjustment parameters, the state machine is connected to the read-write port of the EEPROM, and the corresponding storage address is selected according to the current state value of the circuit to be adjusted and the state machine, and the adjustment parameters are read from the storage address; the adjustment circuit is treated according to the adjustment parameters and state machine settings. Therefore, the problem of cumbersome adjustment of the existing circuit parameters is solved. The implementation of adjustment to the circuit unit is realized, the flexibility of circuit adjustment is improved, the universality of the circuit is improved, and the maintenance and use costs of the circuit are reduced.

Description

Adjusting circuit and circuit adjusting method

technical field

The invention relates to the field of automatic control and electronic application, in particular to a circuit adjustment method and an adjustment circuit.

Background technique

With the improvement of modern integrated circuit production technology, the production cycle of integrated circuits is shortened day by day, and the circuit scale is increased day by day. In the actual application process, the driving or control integrated circuit needs to be adjusted according to the actual application situation, but usually, after the integrated circuit is taped out, the internal parameters have been set. If adjustment or modification requires special equipment and needs Long operating cycle. In view of the above-mentioned problems, in the prior art, the regulation of the circuit is realized by presetting the vacant or existing regulation pins of the integrated circuit. However, when the above method is implemented, since the parameter setting of the vacancy and the adjustment pin is usually single or limited, it is impossible to repeatedly read and write the integrated circuit, and the parameters to be adjusted are usually in the integrated circuit. It is not available until it is soldered to the circuit board, so repeated removal of the IC from the circuit board can also damage the circuit. It can be seen that, in the prior art, the parameter adjustment of the integrated circuit is difficult to operate and the number of adjustments is limited due to the uniqueness of information reading. This increases the cost of using the integrated circuit and reduces the overall reliability of the circuit.

Contents of the invention

In view of the situation existing in the prior art, according to one aspect of the present invention, a kind of adjustment circuit is provided, including EEPROM and state machine; An extra storage unit is set in the EEPROM, and the storage address of the storage unit is pre-stored in the storage address of the circuit to be adjusted or When the state machine is in a plurality of state values, the corresponding adjustment parameters make the storage address correspond to the state value one by one; the state machine is connected with the read-write port of the EEPROM, and according to the current state value of the circuit to be adjusted or the state machine, The corresponding storage address is selected, and the adjustment parameter is read from the storage address to adjust the setting of the circuit to be adjusted or the state machine according to the adjustment parameter.

Preferably, the state machine includes: a state machine reading unit, a state machine internal parameter setting unit and a sensitivity amplifier, the state machine reading unit reads adjustment parameters from the EEPROM, and the state machine internal parameter setting unit The sensitivity amplifier is adjusted according to the adjustment parameter.

Preferably, the external circuit to be adjusted includes: a multi-channel charge pump drive circuit, and a drive circuit for a positive high-voltage or negative high-voltage charge pump.

Preferably, the additional storage unit includes: a first additional storage unit and a second additional storage unit.

Preferably, when the external circuit to be regulated is a driving circuit of a positive high voltage or a negative high voltage charge pump, the regulating terminal Regulator of the driven charge pump is connected to the state machine, and the state machine is based on the first current state value of the circuit to be regulated, from Select the corresponding storage address in the first additional storage unit, read the first adjustment parameter from the storage address, and adjust the driving circuit of the positive high voltage or negative high voltage charge pump according to the first adjustment parameter; if received Regulator feedback signal, then according to the second current state value of the circuit to be adjusted, select the corresponding storage address from the second additional storage unit, read the second adjustment parameter from the storage address, according to the second adjustment parameter Regulates drive circuits for positive high voltage or negative high voltage charge pumps.

Simultaneously the present invention also provides a kind of circuit regulation method, comprises the following steps:

Store the corresponding adjustment parameters when the circuit to be adjusted is in various state values, and store them in independent storage addresses, so that the storage addresses correspond to the state values one by one; select the corresponding storage address according to the state values of the circuit to be adjusted. address, read the adjustment parameter from the storage address; adjust the circuit to be adjusted according to the adjustment parameter.

Preferably, the step of storing the corresponding adjustment parameters when the circuit to be adjusted is in various state values in an independent storage address includes: storing the corresponding adjustment parameters when the drive circuit to be adjusted is in the first state value and the second state value The first adjustment parameter and the second adjustment parameter are stored in the first storage address and the second storage address respectively.

Preferably, the corresponding storage address is selected according to the state value of the circuit to be adjusted, and the step of reading the adjustment parameter from the storage address includes: selecting from the first storage address according to the first state value of the circuit to be adjusted The first adjustment parameter; if the feedback signal from the adjustment terminal Regulator is received, the circuit to be adjusted selects the second adjustment parameter from the second storage address according to the second state value.

Preferably, the step of reading the adjustment parameter from the storage address includes: when the circuit to be adjusted is a drive circuit of a low-voltage electrical appliance or a high-temperature electrical appliance, after the adjustment parameter is read from the storage address, the read adjustment parameter is Special character string pattern check or CRC check; if the check fails, read the adjustment parameters from the storage address again until the check passes.

Through the above technical scheme, the present invention has the following advantages compared with the prior art: the present invention prestores the parameters to be adjusted in EEPROM (Electrically Erasable Programmable Read-Only Memory), so when the circuit needs to be adjusted, the EEPROM The reading of the pre-stored parameters to be adjusted in the corresponding storage address realizes the adjustment of the functional circuit. Therefore, the flexibility of circuit adjustment is improved, the universality of the circuit is improved, and the maintenance and use costs of the circuit are reduced.

Description of drawings

FIG. 1 is a schematic diagram of the composition of the regulating circuit of the present invention in an embodiment;

Fig. 2 is a schematic diagram of the composition of the regulating circuit of the present invention, in which the external circuit to be adjusted is a multi-channel charge pump driving circuit;

Fig. 3 is a schematic diagram of the composition of the regulating circuit of the present invention, in which the external circuit to be adjusted is a state machine;

Fig. 4 is a schematic diagram of the composition of the external circuit to be adjusted as a charge pump in an embodiment of the regulating circuit of the present invention;

Fig. 5 is a schematic diagram of the composition of the regulation circuit of the present invention, in which the external circuit to be adjusted is a charge pump with feedback;

FIG. 6 is a schematic flowchart of a circuit adjustment method in an embodiment of the present invention.

detailed description

The present invention will be described in further detail below in conjunction with the accompanying drawings.

FIG. 1 is a schematic diagram showing the composition of an adjustment system for implementing the method in an embodiment of the present invention. This system comprises: state machine 1, EEPROM2 and external circuit 3 to be adjusted, wherein, state machine 1 and EEPROM2 constitute the regulation circuit of the present invention, state machine reading unit 11 and state machine external parameter setting unit 12 are set in state machine 1 1. An extra storage unit 21 is set in the EEPROM2. The reading end of the state machine reading unit 11 is connected to the read-write interface end of the extra storage unit 21 to read stored data from the extra storage unit 21 . The output end of the state machine reading unit 11 is connected with the input end of the state machine external parameter setting unit 12 , and the data read from the extra storage unit 21 is transmitted to the state machine external parameter setting unit 12 . The output terminal of the external parameter setting unit 12 of the state machine is connected with the parameter setting terminal of the external circuit 3 to be adjusted, and outputs the setting parameters to the external circuit 3 to be adjusted. The realization process of the above adjustment system is as follows: firstly, the corresponding "parameters" when the external circuit 3 to be adjusted is in the working state 1, working state 2 and working state 3 are pre-stored in the extra storage unit 21 one by one. consecutive or non-consecutive addresses. Afterwards, the desired working state is selected from the three working states, and the “storage address” corresponding to the working state is pre-stored in the read address of the state machine reading unit 11 . Subsequently, after starting the state machine 1, the state machine reading unit 11 reads the "parameter" of setting the working state from the additional storage unit 21 according to the read address, and transmits this "parameter" to the "state machine external parameter In the setting unit 12", the state machine external parameter setting unit 12 sets the external circuit 3 to be adjusted according to the received "parameter". In this way, the dynamic parameter setting of the circuit to be adjusted is realized, and the problem that the pre-stored circuit parameters cannot be changed after the EEPROM2 is taped out, and the circuit cannot be reproducibly set, improves the flexibility and reliability of the circuit.

The regulating circuit of the present invention can realize the control on the access quantity of multiple charge pumps. As shown in FIG. 31-2, 31-3, and 31-4 are connected to the circuit, and the connected states of the multi-channel charge pump include: connected to the charge pump 31-1 to work (the set state value is 1), connected to the charge pump 31-1 , 31-2 work (set state value is 2), connect charge pump 31-1, 31-2 and 31-3 work (set state value is 3), connect charge pump 31-1, 31-2 , 31-3 and 31-4 work (the set state value is 4) four working states, wherein, when the charge pump 31-1 is connected to work, the drive value of the multi-channel charge pump drive circuit 31 is 0001, and the charge pump is connected to When the pumps 31-1, 31-2 are working, the driving value of the multi-channel charge pump driving circuit 31 is 0011, and when the charge pumps 31-1, 31-2 and 31-3 are connected, the driving value of the multi-channel charge pump driving circuit 31 is is 0111, the charge pumps 31-1, 31-2, 31-3 and 31-4 are connected, and the driving value of the multi-channel charge pump driving circuit 31 is 1111. Store the state values of the above charge pumps in separate storage addresses, so that the state values correspond to the drive values, as shown in Table 1:

status value storage address driving value status value 1 0000 0001 status value 2 0001 0011 status value 3 0010 0111 status value 4 0011 1111

Table 1

For example: when it is necessary to "select and turn on" the multi-channel charge pumps 31-1, 31-2 and 31-3, at first, write the storage address 0010 corresponding to the state value 3 into the state machine reading unit 11 read statement. After the state machine 1 is powered on and started, the state machine reading unit 11 reads the driving value 0111 from the storage address 0010, and passes the driving value 0111 through the state machine external parameter setting unit 12 to perform multi-channel charge pump driving circuit 31 setting, thereby realizing the opening of the charge pumps 31-1, 31-2 and 31-3, thereby completing the selective access of multiple charge pumps. The problem of real-time control of the number of connected charge pumps is effectively solved, thereby reducing idle power consumption and improving the overall use efficiency of multiple charge pumps.

In order to ensure that the regulating circuit of the present invention can accurately read the data in the extra storage unit 21 in different application environments, as shown in FIG. 3 , in one embodiment of the regulating circuit of the present invention, the state machine 1 serves as The circuit to be adjusted is also provided with a state machine internal parameter setting unit 13 and a sensitivity amplifier 14 in the state machine 1. This unit is used to adjust the setting parameters of the state machine 1 itself, and is connected with the parameter setting end of the sensitivity amplifier 14. The sensitivity amplifier 14 is used to compare the magnitude of the memory cell current read from the EEPROM2 with the reference current, thereby judging the value of the memory cell, converting the analog value of the comparison current into a digital (1 or 0) through a differential comparator circuit, and output to the data bus. When the current regulation circuit works in high temperature and high pressure state, set the state value to 1, and the sensitivity adjustment parameter of the sensitivity amplifier 14 is 1; State value is 2, and the sensitivity adjustment parameter of sensitivity amplifier 14 is 0.8; Specifically as shown in table 2:

status value storage address Sensitivity adjustment parameters status value 1 0000 1 status value 2 0001 0.8

Table 2

When the current regulation circuit is working in an ideal environment, state machine 1 puts the instruction to read storage address 0001 into the state machine reading unit 11 according to the set state value 2, and when the state machine 1 is powered on, from the corresponding Read the sensitivity adjustment parameter 0.8 in the memory address 0001. The state machine 1 sets the sensitivity amplifier 14 of the state machine 1 according to the sensitivity adjustment parameter 0.8, so that the current reading sensitivity is more suitable for the current working environment. Therefore, the reading of data from the memory is more reliable, thus ensuring the accurate control of subsequent circuits.

In order to realize the dynamic regulation of the charge pump through the regulating circuit of the present invention, as shown in FIG. 4, as an embodiment of the regulating circuit of the present invention, the external circuit 3 to be adjusted is a driving circuit 32 of a positive high-voltage or negative high-voltage charge pump , the driving parameters of the driving circuit 32 include: driving parameter A for driving the positive high-voltage charge pump (state value 1) and driving parameter B for driving the negative high-voltage charge pump (state value 2). And the above-mentioned A, B parameters are stored in 0000～0001 of the extra memory unit 21 of EEPROM2. Specifically as shown in Table 3:

status value storage address drive parameter status value 1 0000 A status value 2 0001 B

table 3

The calling and reading process of parameters A and B is the same as the calling method of the above-mentioned embodiment, and will not be repeated here. In order to make the charge pump more stable during operation, as shown in FIG. 5 , in this embodiment, the regulator terminal Regulator of the charge pump 33 is connected to the state machine 1, and the driving parameters of the drive circuit 32 include: driving positive high voltage The driving parameter C of the charge pump adjustment parameter (state value 3) and the driving parameter D of the negative high voltage charge pump adjustment parameter (state value 4). And the above-mentioned C, D parameters are stored in 1000～1001 of the extra storage unit 21 of EEPROM2. Specifically as shown in Table 4:

status value storage address drive parameters status value 3 1000 C status value 4 1001 D.

Table 4

In this embodiment, during the start-up process of the charge pump 33, the state machine reading unit 11 reads from the storage address 0000 or 0001 according to the type of the charge pump currently connected (one of the positive high-voltage or negative high-voltage charge pump). Take drive parameter A or B. When the charge pump 33 is running, if it receives a feedback signal from the regulator, it reads the driving parameter C or D from the storage address 1000 or 1001, thereby realizing the dynamic adjustment of the charge pump. The above implementation manner reduces the replacement of the driving circuit when different types of charge pumps are connected. At the same time, the dynamic adjustment of the charge pump in the working process can also be realized.

FIG. 6 is a schematic flowchart of a circuit adjustment method in an embodiment of the present invention. As shown in Figures 1 to 4 and 5, the circuit adjustment method of the present invention comprises the following steps:

S101: Obtain circuit parameter values in a multi-working state. According to the operating state of the external circuit 3 to be adjusted, the adjustment parameters of the circuit in various operating states are acquired or set. As in the above embodiment, when the external circuit 3 to be adjusted is a multi-channel charge pump drive circuit, there are four charge pump open states, corresponding to four drive values. When the circuit to be adjusted is the state machine itself, there are two sensitivity amplifier states, corresponding to two sensitivity adjustment parameters. When the circuit to be adjusted is the driving circuit 32 of the positive high-voltage or negative high-voltage charge pump, it corresponds to two kinds of driving parameters.

S102: Pre-store circuit parameter values in EEPROM2. The extra storage unit 21 is set in the EEPROM2, for example, addresses 0000-0100 are defined as addresses of the extra storage space. After that, the circuit parameter values obtained in the above step S101 are respectively stored in the above additional storage unit 21 according to different state values or parameter values, to obtain state values, storage addresses and adjustment parameters (sensitivity adjustment parameters or driving parameters) The corresponding comparison table makes the storage address correspond to the state value one by one, as shown in Tables 1-4 in the above-mentioned embodiment.

S103: Obtain a parameter storage address. According to the current state of the external circuit 3 to be adjusted or the state machine 1 to be adjusted, the corresponding parameter storage address is selected. As in the above embodiments, if the multi-channel charge pumps 31 - 1 , 31 - 2 and 31 - 3 are to be "routed and turned on", the storage address 0010 is selected.

S104: Read parameters according to the read address. Write the read instruction according to the storage address in step S103 , and write the read instruction into the boot (or power-on) read instruction of the state machine read unit 11 . After the state machine 1 is powered on, the state machine reading unit 11 executes the read command to read the content of the storage address in the extra storage unit 21 .

When the external circuit 3 to be adjusted is the driving circuit 32 of the positive high-voltage or negative high-voltage charge pump, in order to realize the dynamic adjustment of the charge pump during the operation of the charge pump, the adjustment of the parameters of the charge pump is divided into one-time adjustment at startup and Secondary adjustment during operation. Correspondingly, the first independent storage address and the second independent storage address when starting are set in the additional storage unit 21. During the operation of the charge pump, if the state machine receives the feedback value of the charge pump Regulator, then from the second independent storage address From 1000 to 1001, drive parameter C or D is read. In this way, the dynamic adjustment of the charge pump during operation is realized.

When the circuit 3 to be adjusted is a drive circuit of a low-voltage electrical appliance or a high-temperature electrical appliance, in order to make the above-mentioned reading parameters more accurate, after reading the adjustment parameters from the storage address, a special character string pattern calibration is performed on the read adjustment parameters. check or CRC check; if the check fails, read the adjustment parameters from the storage address again until it passes.

S105: According to the read parameters, set the parameters of the external circuit 3 to be adjusted or the state machine. The state machine 1 sends the adjustment parameter (sensitivity adjustment parameter or drive parameter) obtained in step S104 to the external circuit to be adjusted 3 or the internal parameter setting unit 13 of the state machine, and sets the external circuit to be adjusted 3 or the internal parameter of the state machine Unit 13 implements the regulation.

Through the above scheme, the present invention prestores the parameters to be adjusted in EEPROM (Electrically Erasable Programmable Read-Only Memory). Therefore, when the circuit needs to be adjusted, the parameter to be adjusted is prestored in the corresponding storage address of the EEPROM. Implement regulation on integrated circuits. Therefore, the flexibility of circuit adjustment is improved, the universality of the circuit is improved, and the maintenance and use costs of the circuit are reduced.

What have been described above are only some embodiments of the present invention. For those skilled in the art, without departing from the inventive concept of the present invention, several modifications and improvements can be made, and these all belong to the protection scope of the present invention.

Claims (9)

1. Regulating circuit, including EEPROM and state machine; The reading end of the state machine is used to connect to the EEPROM, and the output end is used to connect to an external circuit to be adjusted; the adjustment end of the external circuit to be adjusted can be connected to the state machine; An extra storage unit is set in the EEPROM, the storage address of the extra storage unit pre-stores the adjustment parameters corresponding to the external circuit to be adjusted or the state machine in various state values, the storage address and the state value one-to-one correspondence; The state machine can select the storage address corresponding to the state value according to the current state value of the external circuit to be adjusted or itself, and read the corresponding adjustment parameters to set the external circuit to be adjusted or itself. make adjustments; When the state machine receives the feedback signal from the adjustment terminal, it can select the storage address corresponding to the state value according to the second current state value of the external circuit to be adjusted, and read the corresponding adjustment parameter Adjust the settings of the external circuit to be adjusted. 2. The adjustment circuit as claimed in claim 1, the state machine comprising: a state machine reading unit, a state machine internal parameter setting unit and a sensitivity amplifier, and the state machine reading unit reads the adjustment parameter from the EEPROM , the internal parameter setting unit of the state machine adjusts the sensitivity amplifier according to the adjustment parameter. 3. The regulating circuit according to claim 1, the external circuit to be regulated comprises: a multi-channel charge pump driving circuit, a positive high voltage or a negative high voltage charge pump driving circuit. 4. The adjusting circuit according to claim 3, the additional storage unit comprises: a first additional storage unit and a second additional storage unit. 5. The regulating circuit as claimed in claim 4, when the external circuit to be regulated is a driving circuit of a positive high voltage or a negative high voltage charge pump, the adjustment terminal of the driven charge pump is connected with the state machine, and the state machine According to the first current state value of the external circuit to be adjusted, the corresponding storage address can be selected from the first additional storage unit, and the corresponding first adjustment parameter can be read from the storage address, for all Adjust the drive circuit of the positive high voltage or negative high voltage charge pump; When the state machine receives the feedback signal from the adjustment terminal of the charge pump, it selects the corresponding storage address from the second additional storage unit according to the second current state value of the external circuit to be adjusted , read the second adjustment parameter from the storage address, and adjust the driving circuit of the positive high voltage or negative high voltage charge pump. 6. A circuit adjustment method, comprising the following steps: S1. Store the first adjustment parameter and the second adjustment parameter corresponding to when the external circuit to be adjusted is in the first state value and the second state value in an independent storage address, so that the storage address corresponds to the state value one by one; S2. Select the corresponding storage address according to the first state value of the external circuit to be adjusted, and read the corresponding first adjustment parameter from the storage address; if the adjustment terminal of the external circuit to be adjusted is received Feedback signal, read the corresponding second adjustment parameter from the storage address according to the second state value of the external circuit to be adjusted; S3. Adjust the external circuit to be adjusted according to the first adjustment parameter or the second adjustment parameter. 7. The circuit adjustment method according to claim 6, said step S1 comprising: The first adjustment parameter and the second adjustment parameter corresponding to when the external circuit to be adjusted is in the first state value and the second state value are respectively stored in the first storage address and the second storage address. 8. The circuit adjustment method according to claim 7, said step S2 comprising: selecting the first adjustment parameter from the first storage address according to the first state value of the external circuit to be adjusted; If the feedback signal from the adjustment terminal of the external circuit is received, the second adjustment parameter is selected from the second storage address according to the second state value of the external circuit to be adjusted. 9. The circuit adjustment method according to claim 6, said step S2 comprising: When the external circuit to be adjusted is a drive circuit of a low-voltage electrical appliance or a high-temperature electrical appliance, after reading the adjustment parameter from the storage address, perform a special string pattern check or CRC on the read adjustment parameter check; If the verification fails, the adjustment parameter is re-read from the storage address until the verification is passed.