[go: up one dir, main page]

CN103579468A - LED packaging structure - Google Patents

LED packaging structure Download PDF

Info

Publication number
CN103579468A
CN103579468A CN201210266017.2A CN201210266017A CN103579468A CN 103579468 A CN103579468 A CN 103579468A CN 201210266017 A CN201210266017 A CN 201210266017A CN 103579468 A CN103579468 A CN 103579468A
Authority
CN
China
Prior art keywords
emitting diode
electrode
light emitting
packaging structure
structure according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201210266017.2A
Other languages
Chinese (zh)
Inventor
谢雨伦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Original Assignee
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rongchuang Energy Technology Co ltd, Zhanjing Technology Shenzhen Co Ltd filed Critical Rongchuang Energy Technology Co ltd
Priority to CN201210266017.2A priority Critical patent/CN103579468A/en
Priority to TW101131206A priority patent/TW201405878A/en
Publication of CN103579468A publication Critical patent/CN103579468A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73257—Bump and wire connectors

Landscapes

  • Led Device Packages (AREA)

Abstract

An LED packaging structure comprises a support, an LED chip and a reflection cup. The support is provided with an upper surface, the LED chip is arranged on the upper surface of the support, the reflection cup is arranged on the upper surface of the support and surrounds the LED chip, and the reflection cup is made of plastics of a decahydronaphthalene structure. The plastics of the decahydronaphthalene structure is strong in high-temperature resistance, and not prone to deterioration, so that the reflection cup made of the plastics of the decahydronaphthalene structure also has good high-temperature resistance, and the LED packaging structure is high temperature resistant, good in stability, and long in service life.

Description

发光二极管封装结构Light-emitting diode packaging structure

技术领域 technical field

本发明涉及一种发光二极管封装结构。 The invention relates to a light emitting diode packaging structure.

背景技术 Background technique

发光二极管(LED，Light Emitting Diode)以其亮度高、工作电压低、功耗小、易与集成电路匹配、驱动简单、寿命长等优点，从而可作为光源而广泛应用于照明领域。 Light Emitting Diode (LED, Light Emitting Diode) has the advantages of high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life, so it can be widely used as a light source in the field of lighting.

一般发光二极管芯片在封装过程中，设置一个反射杯环绕发光二极管芯片，以将照射至其上的光线反射至光出射面出射，从而提升发光二极管封装结构的光出射效率。现有的反射杯的材料一般为具有环已烷结构的塑料。然而，由于环已烷结构的塑料受高温影响容易黄化。而发光二极管芯片在工作中释放较多的热量，从而将影响反射杯的使用寿命，进而影响整个发光二极管封装结构的使用寿命。 Generally, during the packaging process of the LED chip, a reflective cup is arranged around the LED chip to reflect the light irradiated thereon to the light exit surface, thereby improving the light output efficiency of the LED packaging structure. The material of the existing reflection cup is generally plastic with cyclohexane structure. However, due to the cyclohexane structure, the plastic is easily yellowed by high temperature. However, the light-emitting diode chip releases more heat during operation, which will affect the service life of the reflective cup, and further affect the service life of the entire light-emitting diode packaging structure.

发明内容 Contents of the invention

有鉴于此，有必要提供一种耐高温且具有较长使用寿命的发光二极管封装结构。 In view of this, it is necessary to provide a light emitting diode packaging structure with high temperature resistance and long service life.

一种发光二极管封装结构，其包括支架、发光二极管芯片以及反射杯。该支架具有一个上表面。该发光二极管芯片设置在该支架的上表面上。该反射杯设置在该支架的上表面上且环绕该发光二极管芯片，该反射杯的材料为具有十氢化萘结构的塑料。 A light-emitting diode packaging structure, which includes a bracket, a light-emitting diode chip and a reflective cup. The bracket has an upper surface. The light emitting diode chip is arranged on the upper surface of the bracket. The reflective cup is arranged on the upper surface of the bracket and surrounds the light-emitting diode chip, and the material of the reflective cup is plastic with a decahydronaphthalene structure.

具有十氢化萘结构的塑料抗高温能力强且不容易变质，因此由具有十氢化萘结构的塑料制作的反射杯也具有较好的抗高温能力。因此，该发光二极管封装结构能抗高温，具有较好的稳定性，且具有较长的使用寿命。 Plastics with a decahydronaphthalene structure have strong high temperature resistance and are not easy to deteriorate, so the reflective cup made of plastics with a decahydronaphthalene structure also has better high temperature resistance. Therefore, the light-emitting diode packaging structure can resist high temperature, has good stability, and has a long service life.

下面参照附图，结合具体实施方式对本发明作进一步的描述。 The present invention will be further described below in conjunction with specific embodiments with reference to the accompanying drawings.

附图说明 Description of drawings

图1是本发明第一实施例提供的发光二极管封装结构的剖面示意图。 FIG. 1 is a schematic cross-sectional view of a light emitting diode package structure provided by the first embodiment of the present invention.

图2是十氢化萘的结构式。 Figure 2 is the structural formula of decahydronaphthalene.

图3是本发明第二实施例提供的发光二极管封装结构的剖面示意图。 FIG. 3 is a schematic cross-sectional view of a light emitting diode package structure provided by a second embodiment of the present invention.

主要元件符号说明 Description of main component symbols

发光二极管封装结构Light-emitting diode packaging structure 100、200100, 200 支架bracket 10、5010, 50 基板Substrate 1111 上表面upper surface 111111 下表面lower surface 112112 第一引脚first pin 1212 第二引脚second pin 1313 第一电极first electrode 5252 第二电极second electrode 5353 发光二极管芯片LED chip 20、6020, 60 反射杯reflector cup 30、7030,70 折射粒子refraction particles 3131 封装体Package 40、8040, 80

如下具体实施方式将结合上述附图进一步说明本发明。 The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.

具体实施方式 Detailed ways

请参照图1，为本发明第一实施例提供的发光二极管封装结构100的剖面示意图。该发光二极管封装结构100包括支架10、设置在支架10上的发光二极管芯片20、反射杯30以及封装体40。 Please refer to FIG. 1 , which is a schematic cross-sectional view of a light emitting diode package structure 100 according to a first embodiment of the present invention. The LED packaging structure 100 includes a bracket 10 , a LED chip 20 disposed on the bracket 10 , a reflective cup 30 and a packaging body 40 .

在本实施例中，该支架10包括基板11、分别固定于基板11相对两端的第一引脚12及第二引脚13。该基板11为平板状，其具有一个上表面111以及一个与其相对的下表面112。该第一引脚12及第二引脚13均由金属材料制成，并弯折成U型，分别从该基板11的上表面111的相对两端延伸至基板11的下表面112。 In this embodiment, the bracket 10 includes a substrate 11 , first pins 12 and second pins 13 respectively fixed on opposite ends of the substrate 11 . The substrate 11 is flat and has an upper surface 111 and a lower surface 112 opposite thereto. The first pin 12 and the second pin 13 are both made of metal material and bent into a U-shape, respectively extending from opposite ends of the upper surface 111 of the substrate 11 to the lower surface 112 of the substrate 11 .

该发光二极管芯片20设置在该第一引脚12上，且通过导线与该第二引脚13电连接。 The LED chip 20 is disposed on the first pin 12 and is electrically connected to the second pin 13 through a wire.

该反射杯30设置在该基板11的上表面111上，且环绕该发光二极管芯片20。具体地，该反射杯30呈环状，其中部形成一凹陷部（未标示）用于容置该发光二极管芯片20、封装体40等结构。该反射杯30的材料为具有十氢化萘结构的塑料。请一并参见图2，十氢化萘分子式为                                               ，其由两个环已烷并合而成。十氢化萘具有顺式与反式两种异构体，即具有顺式十氢化萘与反式十氢化萘。一般地，反式十氢化萘的邻交叉的相互作用较少，更加稳定。在本实施例中，该反射杯30的材料为具有反式十氢化萘结构的塑料。具有反式十氢化萘结构的塑料抗高温能力强且不容易变质。 The reflective cup 30 is disposed on the upper surface 111 of the substrate 11 and surrounds the LED chip 20 . Specifically, the reflective cup 30 is ring-shaped, and a concave portion (not shown) is formed in the center thereof for accommodating the light-emitting diode chip 20 , the package body 40 and other structures. The reflective cup 30 is made of plastic with a decahydronaphthalene structure. Please refer to Figure 2 together, the molecular formula of decahydronaphthalene is , which is formed by combining two cyclohexanes. Decalin has two isomers, cis and trans, that is, cis-decalin and trans-decalin. Generally, trans-decalin has less cross-orientation interactions and is more stable. In this embodiment, the reflective cup 30 is made of plastic with trans-decalin structure. Plastics with a trans-decalin structure have strong high temperature resistance and are not easy to deteriorate.

在本实施例中，该反射杯30内包括有折射粒子31，该折射粒子31可以为二氧化钛（

Figure 2012102660172100002DEST_PATH_IMAGE002
）、二氧化硅（
Figure 2012102660172100002DEST_PATH_IMAGE003
）或者两者的混合物。该折射粒子31可以提高该反射杯30的反射效率。 In this embodiment, the reflection cup 30 includes refraction particles 31, and the refraction particles 31 may be titanium dioxide (
Figure 2012102660172100002DEST_PATH_IMAGE002
), silica (
Figure 2012102660172100002DEST_PATH_IMAGE003
) or a mixture of both. The refraction particles 31 can improve the reflection efficiency of the reflection cup 30 .

该封装体40收容于该反射杯30内且覆盖该发光二极管芯片20。在本实施例中，该封装体40的出光面为一平面，其与该反射杯30的顶面齐平。该封装体40可以为掺杂有荧光粉（图未示）的封装树脂。 The packaging body 40 is accommodated in the reflective cup 30 and covers the LED chip 20 . In this embodiment, the light emitting surface of the package body 40 is a plane, which is flush with the top surface of the reflective cup 30 . The encapsulation body 40 may be an encapsulation resin doped with fluorescent powder (not shown in the figure).

由于具有十氢化萘结构的塑料抗高温能力强且不容易变质，因此由具有十氢化萘结构的塑料制作的反射杯30也具有较好的抗高温能力。因此，该发光二极管封装结构100能抗高温，具有较好的稳定性，且具有较长的使用寿命。 Because plastics with a decahydronaphthalene structure have strong high temperature resistance and are not easy to deteriorate, the reflection cup 30 made of plastics with a decahydronaphthalene structure also has better high temperature resistance. Therefore, the light emitting diode packaging structure 100 can resist high temperature, has good stability, and has a long service life.

请参照图3，为本发明第二实施例提供的发光二极管封装结构200的剖面示意图。该发光二极管封装结构200与第一实施例提供的发光二极管封装结构100基本相同，其包括支架50、设置在支架50上的发光二极管芯片60、反射杯70以及封装体80。不同之处在于，该支架50包括相互分离设置的第一电极52与第二电极53。该第一电极52与第二电极53为平板状，该发光二极管芯片60通过覆晶倒装设置在该第一电极52与第二电极53上。当然，该发光二极管芯片60也可以通过正装的方式设置在该第一电极52上，且通过导线与第二电极53电连接。 Please refer to FIG. 3 , which is a schematic cross-sectional view of a light emitting diode package structure 200 according to a second embodiment of the present invention. The LED packaging structure 200 is basically the same as the LED packaging structure 100 provided in the first embodiment, and includes a bracket 50 , an LED chip 60 disposed on the bracket 50 , a reflective cup 70 and a packaging body 80 . The difference is that the bracket 50 includes a first electrode 52 and a second electrode 53 that are separated from each other. The first electrode 52 and the second electrode 53 are planar, and the LED chip 60 is flip-chip disposed on the first electrode 52 and the second electrode 53 . Of course, the light emitting diode chip 60 can also be arranged on the first electrode 52 in a front-mounted manner, and electrically connected to the second electrode 53 through wires.

该反射杯70呈环状，其设置在该第一电极52与第二电极53上，且环绕该发光二极管芯片60。该反射杯70的材料为具有十氢化萘结构的塑料。十氢化萘分子式为

Figure 87966DEST_PATH_IMAGE001
，其由两个环已烷并合而成。十氢化萘具有顺式与反式两种异构体，即具有顺式十氢化萘与反式十氢化萘。一般地，反式十氢化萘的邻交叉的相互作用较少，更加稳定。在本实施例中，该反射杯30的材料为具有反式十氢化萘结构的塑料。具有反式十氢化萘结构的塑料抗高温能力强且不容易变质。 The reflective cup 70 is ring-shaped, disposed on the first electrode 52 and the second electrode 53 , and surrounds the LED chip 60 . The reflective cup 70 is made of plastic with a decahydronaphthalene structure. The molecular formula of decahydronaphthalene is
Figure 87966DEST_PATH_IMAGE001
, which is formed by combining two cyclohexanes. Decalin has two isomers, cis and trans, that is, cis-decalin and trans-decalin. Generally, trans-decalin has less cross-orientation interactions and is more stable. In this embodiment, the reflective cup 30 is made of plastic with trans-decalin structure. Plastics with a trans-decalin structure have strong high temperature resistance and are not easy to deteriorate.

另外，本领域技术人员还可于本发明精神内做其它变化，以用于本发明等设计，只要其不偏离本发明的技术效果均可。这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。 In addition, those skilled in the art can also make other changes within the spirit of the present invention for use in the designs of the present invention, as long as they do not deviate from the technical effects of the present invention. These changes made according to the spirit of the present invention should be included in the scope of protection of the present invention.

Claims (8)

1.一种发光二极管封装结构，其包括： 1. A light-emitting diode packaging structure, comprising: 支架，其具有一个上表面； a bracket having an upper surface; 发光二极管芯片，其设置在该支架的上表面上；以及 a light emitting diode chip disposed on the upper surface of the support; and 反射杯，其设置在该支架的上表面上且环绕该发光二极管芯片，该反射杯的材料为具有十氢化萘结构的塑料。 A reflective cup is arranged on the upper surface of the bracket and surrounds the light-emitting diode chip, and the material of the reflective cup is plastic with a decahydronaphthalene structure. 2.如权利要求1所述的发光二极管封装结构，其特征在于，该反射杯的材料为具有反式十氢化萘结构的塑料。 2 . The light emitting diode package structure according to claim 1 , wherein the reflective cup is made of plastic having a trans-decalin structure. 3 . 3.如权利要求1所述的发光二极管封装结构，其特征在于，该支架包括基板以及设置在该基板上相对两端的第一引脚与第二引脚，该发光二极管芯片设置在第一引脚上，且与该第二引脚电连接。 3. The light emitting diode packaging structure according to claim 1, characterized in that, the support includes a substrate and a first lead and a second lead arranged at opposite ends of the substrate, and the light emitting diode chip is arranged on the first lead. pin and is electrically connected to the second pin. 4.如权利要求1所述的发光二极管封装结构，其特征在于，该支架包括相互分离的第一电极与第二电极，该发光二极管芯片通过覆晶封装的方式设置在该第一电极与第二电极上。 4. The light emitting diode packaging structure according to claim 1, wherein the bracket comprises a first electrode and a second electrode separated from each other, and the light emitting diode chip is arranged on the first electrode and the second electrode by means of flip-chip packaging. on the second electrode. 5.如权利要求1所述的发光二极管封装结构，其特征在于，该支架包括相互分离的第一电极与第二电极，该发光二极管设置在该第一电极上，且与第二电极电连接。 5. The light emitting diode packaging structure according to claim 1, wherein the bracket comprises a first electrode and a second electrode separated from each other, the light emitting diode is disposed on the first electrode and is electrically connected to the second electrode . 6.如权利要求1所述的发光二极管封装结构，其特征在于，该反射杯内包括有折射粒子。 6 . The LED package structure according to claim 1 , wherein the reflection cup includes refraction particles. 7 . 7.如权利要求6所述的发光二极管封装结构，其特征在于，该折射粒子包括二氧化钛或者二氧化硅。 7. The LED packaging structure according to claim 6, wherein the refraction particles comprise titanium dioxide or silicon dioxide. 8.如权利要求1所述的发光二极管封装结构，其特征在于，进一步包括封装体，该封装体收容于该反射杯内且覆盖该发光二极管芯片。 8 . The LED packaging structure according to claim 1 , further comprising a packaging body, the packaging body is accommodated in the reflective cup and covers the LED chip.
CN201210266017.2A 2012-07-30 2012-07-30 LED packaging structure Pending CN103579468A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201210266017.2A CN103579468A (en) 2012-07-30 2012-07-30 LED packaging structure
TW101131206A TW201405878A (en) 2012-07-30 2012-08-28 Light emitting diode package structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210266017.2A CN103579468A (en) 2012-07-30 2012-07-30 LED packaging structure

Publications (1)

Publication Number Publication Date
CN103579468A true CN103579468A (en) 2014-02-12

Family

ID=50050813

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210266017.2A Pending CN103579468A (en) 2012-07-30 2012-07-30 LED packaging structure

Country Status (2)

Country Link
CN (1) CN103579468A (en)
TW (1) TW201405878A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090239997A1 (en) * 2008-03-18 2009-09-24 Taguchi Yusuke White thermosetting silicone resin composition for molding an optical semiconductor case and optical semiconductor case
CN101578711A (en) * 2006-11-09 2009-11-11 跃进封装公司 LED reflective package
US20110058776A1 (en) * 2009-09-07 2011-03-10 Ntto Denko Corporation Resin composition for optical semiconductor device, optical-semiconductor-device lead frame obtained using the same, and optical semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101578711A (en) * 2006-11-09 2009-11-11 跃进封装公司 LED reflective package
US20090239997A1 (en) * 2008-03-18 2009-09-24 Taguchi Yusuke White thermosetting silicone resin composition for molding an optical semiconductor case and optical semiconductor case
US20110058776A1 (en) * 2009-09-07 2011-03-10 Ntto Denko Corporation Resin composition for optical semiconductor device, optical-semiconductor-device lead frame obtained using the same, and optical semiconductor device

Also Published As

Publication number Publication date
TW201405878A (en) 2014-02-01

Similar Documents

Publication Publication Date Title
CN102903706B (en) Light emitting device package and illuminance system using the same
CN103928596B (en) Luminescent device
CN102903837B (en) Light emitting device packaging piece and include its illuminator
CN102738367B (en) Luminaire
CN108260361B (en) light emitting device
US11686436B2 (en) LED filament and light bulb using LED filament
CN102130239A (en) Omni-directional lighting LED packaging method and LED package
CN105006508A (en) Light emitting diode packaging structure
CN204045628U (en) A kind of surface-mounted LED light source of many bowls of cup structures
CN101997076A (en) Light emitting diode package
US8445920B1 (en) Light emitting diode
CN207818608U (en) A kind of LED lighting device
TWI472011B (en) Light emitting diode package structure
WO2017181751A1 (en) Uv filament lamp
JP3242967U (en) LED filament and light bulb using said LED filament
CN103715338A (en) Luminescence device
CN102479909B (en) Light emitting diode
CN102856465B (en) Light emitting diode packaging structure
CN201717286U (en) Led light source module packaging structure
CN103579468A (en) LED packaging structure
CN203162616U (en) Light source plate of light emitting diode
CN105023986B (en) Led
CN103545300B (en) Package structure for LED
WO2015058602A1 (en) Semiconductor device and manufacturing method therefor
CN202796950U (en) Semiconductor light-emitting device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20140212