CN103576810B - Electronic device - Google Patents
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- CN103576810B CN103576810B CN201210282375.2A CN201210282375A CN103576810B CN 103576810 B CN103576810 B CN 103576810B CN 201210282375 A CN201210282375 A CN 201210282375A CN 103576810 B CN103576810 B CN 103576810B
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Abstract
Description
技术领域technical field
本发明涉及一种电子装置,特别涉及一种具有形状记忆合金元件的电子装置。The invention relates to an electronic device, in particular to an electronic device with a shape memory alloy element.
背景技术Background technique
散热问题长久以来一直是笔记型电脑、平板电脑等可携带式电子装置在机构设计上的一大难题,常见的电子装置通常利用风扇搭配散热孔的设计来进行散热,但由于目前电子装置的机体设计日趋轻薄,其内部可利用的散热空间相对减少,使整体的散热效率并不理想,无法满足目前高运算速度的电子装置的散热需求。有鉴于此,如何突破既有的散热限制,成为一重要的课题。The problem of heat dissipation has long been a major problem in the mechanical design of portable electronic devices such as notebook computers and tablet computers. Common electronic devices usually use fans with cooling holes to dissipate heat. However, due to the current electronic device body Designs are becoming thinner and thinner, and the available heat dissipation space inside them is relatively reduced, so that the overall heat dissipation efficiency is not ideal, and it cannot meet the heat dissipation requirements of current high-speed electronic devices. In view of this, how to break through the existing heat dissipation limitation has become an important issue.
发明内容Contents of the invention
本发明的一实施例提供一种电子装置,包括一本体以及一形状记忆合金元件,其中本体形成有一表面与一散热开口,其中散热开口设置于表面上,形状记忆合金元件设置于散热开口上,当形状记忆合金元件的温度低于一临界温度时,形状记忆合金元件呈现一第一形状,并遮蔽散热开口;当形状记忆合金元件受热使温度上升并超越临界温度时,形状记忆合金元件产生形变并凸出于表面,此时形状记忆合金元件呈现一第二形状,并与本体之间形成一通道。An embodiment of the present invention provides an electronic device, including a body and a shape memory alloy element, wherein the body is formed with a surface and a heat dissipation opening, wherein the heat dissipation opening is disposed on the surface, and the shape memory alloy element is disposed on the heat dissipation opening. When the temperature of the shape memory alloy element is lower than a critical temperature, the shape memory alloy element presents a first shape and covers the heat dissipation opening; when the shape memory alloy element is heated to increase the temperature and exceeds the critical temperature, the shape memory alloy element deforms and protrude from the surface. At this time, the shape memory alloy element presents a second shape and forms a channel with the main body.
于一实施例中,当前述形状记忆合金元件冷却并使温度降低至临界温度以下时,形状记忆合金元件由第二形状恢复至第一形状,并遮蔽散热开口。In one embodiment, when the shape memory alloy element is cooled and the temperature drops below the critical temperature, the shape memory alloy element recovers from the second shape to the first shape and shields the heat dissipation opening.
于一实施例中,前述临界温度介于40℃至65℃之间。In one embodiment, the aforementioned critical temperature is between 40°C and 65°C.
于一实施例中,前述形状记忆合金元件具有双程记忆效应。In one embodiment, the aforementioned shape memory alloy element has a two-way memory effect.
于一实施例中,前述形状记忆合金元件的材质包括铁基合金、镍-钛合金或铜基合金。In one embodiment, the material of the shape memory alloy element includes iron-based alloy, nickel-titanium alloy or copper-based alloy.
于一实施例中,当前述形状记忆合金元件受热使温度上升并超越临界温度时,至少一部分的形状记忆合金元件由麻田散体(马氏体)状态转换成沃斯田体(奥氏体)状态。In one embodiment, when the above-mentioned shape memory alloy element is heated to increase the temperature and exceed the critical temperature, at least a part of the shape memory alloy element is converted from the state of martensite (martensite) to wastite (austenite) state.
于一实施例中,前述形状记忆合金元件形成有多个狭缝,当形状记忆合金元件的温度低于临界温度时,狭缝呈现一闭合状态;当形状记忆合金元件受热使温度上升并超越临界温度时,形状记忆合金元件产生形变,并使狭缝扩张至一开启状态。In one embodiment, the above-mentioned shape memory alloy element is formed with a plurality of slits, when the temperature of the shape memory alloy element is lower than the critical temperature, the slit is in a closed state; when the shape memory alloy element is heated, the temperature rises and exceeds the critical temperature. When the temperature is high, the shape memory alloy element deforms and expands the slit to an open state.
于一实施例中,前述狭缝为间隔排列。In one embodiment, the aforementioned slits are arranged at intervals.
于一实施例中,前述本体包括一滑槽,形状记忆合金元件容置于滑槽内。In one embodiment, the aforementioned body includes a sliding slot, and the shape memory alloy element is accommodated in the sliding slot.
于一实施例中,当前述形状记忆合金元件产生形变时,形状记忆合金元件于滑槽内移动。In one embodiment, when the shape memory alloy element is deformed, the shape memory alloy element moves in the slide groove.
附图说明Description of drawings
图1表示本发明的一实施例的形状记忆合金元件呈现第一形状时的示意图;FIG. 1 shows a schematic diagram of a shape memory alloy element according to an embodiment of the present invention when it presents a first shape;
图2表示本发明的一实施例的形状记忆合金元件呈现第二形状时的示意图;Fig. 2 shows the schematic diagram when the shape memory alloy element of an embodiment of the present invention presents a second shape;
图3表示本发明的另一实施例的形状记忆合金元件呈现第一形状时的示意图;Fig. 3 shows the schematic diagram when the shape memory alloy element of another embodiment of the present invention presents the first shape;
图4表示沿图3中A-A’方向的剖视图;Fig. 4 represents the sectional view along A-A ' direction among Fig. 3;
图5表示本发明的另一实施例的形状记忆合金元件呈现第二形状时的示意图;以及Fig. 5 shows the schematic diagram when the shape memory alloy element of another embodiment of the present invention presents a second shape; and
图6表示沿图5中B-B’方向的剖视图。Fig. 6 shows a sectional view along the direction B-B' in Fig. 5 .
其中,附图标记说明如下:Wherein, the reference signs are explained as follows:
本体 1; 形状记忆合金元件 2;Body 1; shape memory alloy element 2;
散热开口 11; 散热孔 12;Cooling opening 11; Cooling hole 12;
滑槽 13; 狭缝 21;chute 13; slot 21;
电子装置 E; 通道 P;Electronics E; Channel P;
表面 S1。Surface S1.
具体实施方式detailed description
首先请一并参阅图1、图2,其示出本发明的一实施例的电子装置E,例如为笔记型电脑或平板电脑,主要包括一本体1以及一形状记忆合金元件2,其中本体1形成有一表面S1以及设置于表面S1上的一散热开口11,在本实施例中,散热开口11例如为一矩形开口。前述形状记忆合金元件2大致为一矩形结构并设置于散热开口11上,其中形状记忆合金元件2形成有多个狭缝21,且狭缝21均朝同一方向延伸并间隔排列。如图2所示,形状记忆合金元件2可在其温度高于一临界温度时产生形变,并与本体1之间形成一通道P,以提高电子装置E的散热效率。First, please refer to FIG. 1 and FIG. 2 together, which shows an electronic device E according to an embodiment of the present invention, such as a notebook computer or a tablet computer, mainly including a body 1 and a shape memory alloy element 2, wherein the body 1 A surface S1 and a heat dissipation opening 11 disposed on the surface S1 are formed. In this embodiment, the heat dissipation opening 11 is, for example, a rectangular opening. The aforementioned shape memory alloy element 2 is roughly a rectangular structure and is disposed on the heat dissipation opening 11 , wherein the shape memory alloy element 2 is formed with a plurality of slits 21 , and the slits 21 extend toward the same direction and are arranged at intervals. As shown in FIG. 2 , the shape memory alloy element 2 can deform when its temperature is higher than a critical temperature, and forms a channel P with the body 1 to improve the heat dissipation efficiency of the electronic device E.
需特别说明的是,前述形状记忆合金元件2的材质为具有双程记忆效应(two-wayshape memory effect)的合金,例如可为铁基合金、镍-钛合金或铜基合金。It should be noted that the material of the aforementioned shape memory alloy element 2 is an alloy with a two-way shape memory effect, such as an iron-based alloy, a nickel-titanium alloy or a copper-based alloy.
在图1中,当电子装置E尚未开始运作或温度较低时,由于形状记忆合金元件2的温度低于一临界温度,因此呈现大致为平坦的板状(第一形状),其中临界温度可介于40℃至65℃之间,且此时形状记忆合金元件2完全遮蔽散热开口11。由于狭缝21在此时为闭合状态,故可防止灰尘等异物经由狭缝21或散热开口11进入电子装置E而造成损坏。In FIG. 1, when the electronic device E has not started to operate or the temperature is low, since the temperature of the shape memory alloy element 2 is lower than a critical temperature, it presents a substantially flat plate shape (first shape), wherein the critical temperature can be Between 40° C. and 65° C., and at this time, the shape memory alloy element 2 completely covers the heat dissipation opening 11 . Since the slit 21 is closed at this time, it is possible to prevent foreign matter such as dust from entering the electronic device E through the slit 21 or the heat dissipation opening 11 and causing damage.
接着请参阅图2,当电子装置E开始运作且其内部的电子元件产生大量的热能时,部分热能会传递至形状记忆合金元件2并使其受热。当形状记忆合金元件2的温度上升并超越临界温度时,至少一部分形状记忆合金元件2的合金材料会由麻田散体状态转换成沃斯田体状态,使形状记忆合金元件2开始产生形变,此时形状记忆合金元件2会凸出于表面S1并形成弧状(第二形状),同时与本体1之间形成两个通道P,使热能可通过通道P散出,进而提高电子装置E的散热效率,并延长其内部元件的使用寿命。Next, please refer to FIG. 2 , when the electronic device E starts to operate and the electronic components inside generate a large amount of heat energy, part of the heat energy will be transferred to the shape memory alloy element 2 and heat it up. When the temperature of the shape-memory alloy element 2 rises and exceeds the critical temperature, at least a part of the alloy material of the shape-memory alloy element 2 will be converted from a grain-like bulk state to a Worth-field state, so that the shape-memory alloy element 2 will start to deform. At the same time, the shape memory alloy element 2 will protrude from the surface S1 and form an arc shape (second shape), and at the same time, two channels P are formed between the body 1, so that heat energy can be dissipated through the channels P, thereby improving the heat dissipation efficiency of the electronic device E , and prolong the service life of its internal components.
特别地是,当形状记忆合金元件2受热而使其温度上升并超越临界温度时,形状记忆合金元件2会变形成弧状,并使其上的狭缝21扩张至开启状态(如图2所示)。因此,热能亦可同时经由扩张的狭缝21迅速离开电子装置E,进一步达到散热的功效。In particular, when the shape memory alloy element 2 is heated so that its temperature rises and exceeds the critical temperature, the shape memory alloy element 2 will be deformed into an arc shape, and the slit 21 on it will expand to an open state (as shown in Figure 2 ). Therefore, heat energy can also leave the electronic device E quickly through the expanded slit 21 to further achieve the effect of heat dissipation.
相对地,当形状记忆合金元件2冷却并使温度降低至临界温度以下时,形状记忆合金元件2会由弧状(第二形状)恢复至平坦的板状(第一形状),并再次遮蔽散热开口11,此时狭缝21则会由开启状态回复至闭合状态。Conversely, when the shape memory alloy element 2 is cooled and the temperature is lowered below the critical temperature, the shape memory alloy element 2 will return from an arc shape (second shape) to a flat plate shape (first shape), and cover the heat dissipation opening again 11. At this time, the slit 21 will return from the open state to the closed state.
接着请一并参阅图3、图4,其中图4表示沿图3中A-A’方向的剖视图。本发明的另一实施例的电子装置E还包括多个散热孔12(图3)与多个滑槽13(图4),前述形状记忆合金元件2邻近散热孔12。当形状记忆合金元件2的温度低于临界温度时,形状记忆合金元件2呈现平坦的板状(第一形状)并遮蔽散热开口11,此时电子装置E仅通过散热孔12进行散热。如图4所示,滑槽13设置于散热开口11的两侧边,形状记忆合金元件2的两侧边缘则容置于滑槽13内。Then please refer to Fig. 3 and Fig. 4 together, wherein Fig. 4 shows a cross-sectional view along the direction A-A' in Fig. 3 . The electronic device E in another embodiment of the present invention further includes a plurality of heat dissipation holes 12 ( FIG. 3 ) and a plurality of sliding grooves 13 ( FIG. 4 ), and the aforementioned shape memory alloy element 2 is adjacent to the heat dissipation holes 12 . When the temperature of the shape memory alloy element 2 is lower than the critical temperature, the shape memory alloy element 2 presents a flat plate shape (the first shape) and covers the heat dissipation opening 11 , and the electronic device E only dissipates heat through the heat dissipation hole 12 . As shown in FIG. 4 , the sliding slots 13 are disposed on both sides of the heat dissipation opening 11 , and the two side edges of the shape memory alloy element 2 are accommodated in the sliding slots 13 .
再请一并参阅图5、图6,其中图6表示沿图5中B-B’方向的剖视图。当形状记忆合金元件2的温度上升并超越临界温度时,形状记忆合金元件2会开始产生形变而形成弧状(第二形状),同时与本体1之间形成一个通道P,其中通道P邻近于散热孔12,此时热能可同时通过通道P以及散热孔12离开电子装置E,进而使电子装置E更有效率地散热。Please refer to Fig. 5 and Fig. 6 together again, wherein Fig. 6 shows a sectional view along the direction B-B' in Fig. 5 . When the temperature of the shape memory alloy element 2 rises and exceeds the critical temperature, the shape memory alloy element 2 will start to deform and form an arc (second shape), and at the same time form a channel P with the body 1, wherein the channel P is adjacent to the heat sink At this time, the heat energy can leave the electronic device E through the channel P and the heat dissipation hole 12 at the same time, so that the electronic device E can dissipate heat more efficiently.
如图6所示,当形状记忆合金元件2产生形变时,形状记忆合金元件2的边缘部分可于滑槽13内滑移,此时形状记忆合金元件2的中央部分会向上凸出,并与本体1之间形成通道P。As shown in Figure 6, when the shape memory alloy element 2 is deformed, the edge portion of the shape memory alloy element 2 can slide in the sliding groove 13, and at this time, the central portion of the shape memory alloy element 2 will protrude upwards, and A channel P is formed between the bodies 1 .
综上所述,本发明提供一种电子装置,主要包括一本体以及一形状记忆合金元件,其中本体形成有一表面与设置于表面上的一散热开口,形状记忆合金元件设置于散热开口上。当形状记忆合金元件的温度低于一临界温度时,形状记忆合金元件呈现一第一形状,并遮蔽散热开口;当形状记忆合金元件受热使温度上升并超越临界温度时,形状记忆合金元件产生形变并凸出于表面,此时形状记忆合金元件呈现一第二形状,并与本体之间形成一通道,使热能可通过通道离开电子装置,进而能提高电子装置的散热效率,并延长其内部元件的使用寿命。To sum up, the present invention provides an electronic device, which mainly includes a body and a shape memory alloy element, wherein the body forms a surface and a heat dissipation opening disposed on the surface, and the shape memory alloy element is disposed on the heat dissipation opening. When the temperature of the shape memory alloy element is lower than a critical temperature, the shape memory alloy element presents a first shape and covers the heat dissipation opening; when the shape memory alloy element is heated to increase the temperature and exceeds the critical temperature, the shape memory alloy element deforms And protrude from the surface, at this time, the shape memory alloy element presents a second shape, and forms a channel with the body, so that heat energy can leave the electronic device through the channel, thereby improving the heat dissipation efficiency of the electronic device and extending its internal components service life.
虽然本发明以前述的实施例揭露如上,然其并非用以限定本发明。本发明所属技术领域的技术人员,在不脱离本发明的精神和范围内,当可做许多的更动与变更。因此本发明的保护范围以随附权利要求书界定的范围为准。Although the present invention is disclosed by the aforementioned embodiments, they are not intended to limit the present invention. Those skilled in the art to which the present invention belongs may make many modifications and changes without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope defined by the appended claims.
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| CN104853562B (en) * | 2014-02-19 | 2018-04-27 | 联想(北京)有限公司 | A kind of electronic equipment and flow accelerator |
| CN108029227B (en) * | 2015-09-15 | 2020-05-26 | 派克汉尼芬公司 | Intelligent EMI vent |
| CN108401403B (en) * | 2016-03-28 | 2021-07-16 | 联想(北京)有限公司 | Electronic equipment and heat dissipation method thereof |
| CN106621036B (en) * | 2016-12-20 | 2023-05-02 | 北京品驰医疗设备有限公司 | Implanted sacral nerve stimulation device |
| CN107489923A (en) * | 2017-07-26 | 2017-12-19 | 东莞市闻誉实业有限公司 | Collapsible Shared Lighting |
| CN109696271A (en) * | 2017-10-23 | 2019-04-30 | 南京开天眼无人机科技有限公司 | A kind of pressure sensor equipped with memorial alloy |
| TWI653526B (en) * | 2017-12-26 | 2019-03-11 | Acer Incorporated | Electronic device |
| CN117500149B (en) * | 2023-12-27 | 2024-04-26 | 荣耀终端有限公司 | Vapor chamber, circuit board assembly and electronic equipment |
| CN119967766B (en) * | 2024-12-25 | 2025-12-09 | 南京航空航天大学 | Temperature and vibration coupling controller and method for manufacturing shape memory alloy porous structure based on additive |
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