CN103560201A - Ultraviolet light-emitting diode promoting growth of plants - Google Patents
Ultraviolet light-emitting diode promoting growth of plants Download PDFInfo
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- CN103560201A CN103560201A CN201310583641.XA CN201310583641A CN103560201A CN 103560201 A CN103560201 A CN 103560201A CN 201310583641 A CN201310583641 A CN 201310583641A CN 103560201 A CN103560201 A CN 103560201A
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- 230000008635 plant growth Effects 0.000 title claims abstract description 21
- 230000001737 promoting effect Effects 0.000 title claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 173
- 239000000463 material Substances 0.000 claims abstract description 57
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 32
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 32
- 238000005538 encapsulation Methods 0.000 claims abstract 7
- 239000011858 nanopowder Substances 0.000 claims abstract 5
- 239000003292 glue Substances 0.000 claims abstract 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 68
- 239000011787 zinc oxide Substances 0.000 claims description 34
- 239000002245 particle Substances 0.000 claims description 32
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 30
- 239000002105 nanoparticle Substances 0.000 claims description 28
- 150000004767 nitrides Chemical class 0.000 claims description 22
- 150000004645 aluminates Chemical class 0.000 claims description 20
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 15
- 239000011575 calcium Substances 0.000 claims description 15
- ITVPBBDAZKBMRP-UHFFFAOYSA-N chloro-dioxido-oxo-$l^{5}-phosphane;hydron Chemical group OP(O)(Cl)=O ITVPBBDAZKBMRP-UHFFFAOYSA-N 0.000 claims description 15
- 239000002073 nanorod Substances 0.000 claims description 13
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims description 11
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 6
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910019142 PO4 Inorganic materials 0.000 claims description 5
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- -1 oxide Chemical compound 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 239000005084 Strontium aluminate Substances 0.000 claims description 2
- 239000005083 Zinc sulfide Substances 0.000 claims description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 2
- RCMWGBKVFBTLCW-UHFFFAOYSA-N barium(2+);dioxido(dioxo)molybdenum Chemical compound [Ba+2].[O-][Mo]([O-])(=O)=O RCMWGBKVFBTLCW-UHFFFAOYSA-N 0.000 claims description 2
- WAKZZMMCDILMEF-UHFFFAOYSA-H barium(2+);diphosphate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O WAKZZMMCDILMEF-UHFFFAOYSA-H 0.000 claims description 2
- QKYBEKAEVQPNIN-UHFFFAOYSA-N barium(2+);oxido(oxo)alumane Chemical compound [Ba+2].[O-][Al]=O.[O-][Al]=O QKYBEKAEVQPNIN-UHFFFAOYSA-N 0.000 claims description 2
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 claims description 2
- XFWJKVMFIVXPKK-UHFFFAOYSA-N calcium;oxido(oxo)alumane Chemical compound [Ca+2].[O-][Al]=O.[O-][Al]=O XFWJKVMFIVXPKK-UHFFFAOYSA-N 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 2
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 claims description 2
- MMXSKTNPRXHINM-UHFFFAOYSA-N cerium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Ce+3].[Ce+3] MMXSKTNPRXHINM-UHFFFAOYSA-N 0.000 claims description 2
- 229910001938 gadolinium oxide Inorganic materials 0.000 claims description 2
- 229940075613 gadolinium oxide Drugs 0.000 claims description 2
- YIAXEFITNBBEOD-UHFFFAOYSA-N gadolinium(3+) trisulfide Chemical compound [S--].[S--].[S--].[Gd+3].[Gd+3] YIAXEFITNBBEOD-UHFFFAOYSA-N 0.000 claims description 2
- JAOZQVJVXQKQAD-UHFFFAOYSA-K gadolinium(3+);phosphate Chemical compound [Gd+3].[O-]P([O-])([O-])=O JAOZQVJVXQKQAD-UHFFFAOYSA-K 0.000 claims description 2
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 claims description 2
- LQFNMFDUAPEJRY-UHFFFAOYSA-K lanthanum(3+);phosphate Chemical compound [La+3].[O-]P([O-])([O-])=O LQFNMFDUAPEJRY-UHFFFAOYSA-K 0.000 claims description 2
- YTYSNXOWNOTGMY-UHFFFAOYSA-N lanthanum(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[La+3].[La+3] YTYSNXOWNOTGMY-UHFFFAOYSA-N 0.000 claims description 2
- OGRLITDAVSILTM-UHFFFAOYSA-N lead(2+);oxido(dioxo)vanadium Chemical compound [Pb+2].[O-][V](=O)=O.[O-][V](=O)=O OGRLITDAVSILTM-UHFFFAOYSA-N 0.000 claims description 2
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 2
- 239000002057 nanoflower Substances 0.000 claims description 2
- 239000002071 nanotube Substances 0.000 claims description 2
- 239000002070 nanowire Substances 0.000 claims description 2
- XZIGKOYGIHSSCQ-UHFFFAOYSA-N neodymium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Nd+3].[Nd+3] XZIGKOYGIHSSCQ-UHFFFAOYSA-N 0.000 claims description 2
- VUXGXCBXGJZHNB-UHFFFAOYSA-N praseodymium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Pr+3].[Pr+3] VUXGXCBXGJZHNB-UHFFFAOYSA-N 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- FNWBQFMGIFLWII-UHFFFAOYSA-N strontium aluminate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Sr+2].[Sr+2] FNWBQFMGIFLWII-UHFFFAOYSA-N 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- TYIZUJNEZNBXRS-UHFFFAOYSA-K trifluorogadolinium Chemical compound F[Gd](F)F TYIZUJNEZNBXRS-UHFFFAOYSA-K 0.000 claims description 2
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 claims description 2
- JOPDZQBPOWAEHC-UHFFFAOYSA-H tristrontium;diphosphate Chemical compound [Sr+2].[Sr+2].[Sr+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O JOPDZQBPOWAEHC-UHFFFAOYSA-H 0.000 claims description 2
- 229940105963 yttrium fluoride Drugs 0.000 claims description 2
- 229910000164 yttrium(III) phosphate Inorganic materials 0.000 claims description 2
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 claims description 2
- UXBZSSBXGPYSIL-UHFFFAOYSA-K yttrium(iii) phosphate Chemical compound [Y+3].[O-]P([O-])([O-])=O UXBZSSBXGPYSIL-UHFFFAOYSA-K 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- 235000021317 phosphate Nutrition 0.000 claims 2
- DNWNZRZGKVWORZ-UHFFFAOYSA-N calcium oxido(dioxo)vanadium Chemical compound [Ca+2].[O-][V](=O)=O.[O-][V](=O)=O DNWNZRZGKVWORZ-UHFFFAOYSA-N 0.000 claims 1
- YMNMFUIJDSASQW-UHFFFAOYSA-N distrontium;oxygen(2-);vanadium Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[V].[V].[Sr+2].[Sr+2] YMNMFUIJDSASQW-UHFFFAOYSA-N 0.000 claims 1
- 150000002222 fluorine compounds Chemical class 0.000 claims 1
- 229910003443 lutetium oxide Inorganic materials 0.000 claims 1
- MPARYNQUYZOBJM-UHFFFAOYSA-N oxo(oxolutetiooxy)lutetium Chemical compound O=[Lu]O[Lu]=O MPARYNQUYZOBJM-UHFFFAOYSA-N 0.000 claims 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- KKZKWPQFAZAUSB-UHFFFAOYSA-N samarium(iii) sulfide Chemical compound [S-2].[S-2].[S-2].[Sm+3].[Sm+3] KKZKWPQFAZAUSB-UHFFFAOYSA-N 0.000 claims 1
- 150000004763 sulfides Chemical class 0.000 claims 1
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- 230000005284 excitation Effects 0.000 abstract description 27
- 230000006378 damage Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 25
- 241000196324 Embryophyta Species 0.000 description 13
- 241000209094 Oryza Species 0.000 description 12
- 235000007164 Oryza sativa Nutrition 0.000 description 12
- 235000009566 rice Nutrition 0.000 description 12
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 7
- 238000004806 packaging method and process Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000029553 photosynthesis Effects 0.000 description 3
- 238000010672 photosynthesis Methods 0.000 description 3
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical compound O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 235000021466 carotenoid Nutrition 0.000 description 1
- 150000001747 carotenoids Chemical class 0.000 description 1
- 229930002875 chlorophyll Natural products 0.000 description 1
- 235000019804 chlorophyll Nutrition 0.000 description 1
- ATNHDLDRLWWWCB-AENOIHSZSA-M chlorophyll a Chemical compound C1([C@@H](C(=O)OC)C(=O)C2=C3C)=C2N2C3=CC(C(CC)=C3C)=[N+]4C3=CC3=C(C=C)C(C)=C5N3[Mg-2]42[N+]2=C1[C@@H](CCC(=O)OC\C=C(/C)CCC[C@H](C)CCC[C@H](C)CCCC(C)C)[C@H](C)C2=C5 ATNHDLDRLWWWCB-AENOIHSZSA-M 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000012258 culturing Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 235000021384 green leafy vegetables Nutrition 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000243 photosynthetic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
- H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- Luminescent Compositions (AREA)
Abstract
一种促进植物生长的紫外发光二极管，包括底座、紫外发光二极管芯片、紫外发光二极管芯片上的发光层、封装层，所述紫外发光二极管芯片上的发光层由高纯无机纳米发光材料、稀土蓝色荧光粉和稀土红色荧光粉混合组成，所述封装层由封装胶和无机纳米粉体混合组成，并涂覆于紫外发光二极管芯片上的发光层上。紫外发光二极管芯片上的发光层以紫外光源作为激发源主体，可以有效增强发光强度，提高发光效率，激发高纯无机纳米发光材料、稀土蓝色荧光粉和稀土红色荧光粉，可以使得发光更加充分均匀；封装层中混合有紫外屏蔽能力无机纳米粉体可以吸收多余的紫外光而发出较长波长的蓝光，在保证红蓝光通过的前提下，有效屏蔽紫外线，减少对植物的伤害。
An ultraviolet light-emitting diode for promoting plant growth, comprising a base, an ultraviolet light-emitting diode chip, a light-emitting layer on the ultraviolet light-emitting diode chip, and an encapsulation layer. The light-emitting layer on the ultraviolet light-emitting diode chip is made of high-purity inorganic nano-luminescent materials, rare earth Red fluorescent powder and rare earth red fluorescent powder are mixed, and the encapsulation layer is composed of encapsulation glue and inorganic nanometer powder, and is coated on the light-emitting layer on the ultraviolet light-emitting diode chip. The light-emitting layer on the ultraviolet light-emitting diode chip uses the ultraviolet light source as the main excitation source, which can effectively enhance the luminous intensity, improve the luminous efficiency, and excite high-purity inorganic nano-luminescent materials, rare earth blue phosphors and rare earth red phosphors, which can make the light more fully Uniform; Inorganic nano-powder with ultraviolet shielding ability mixed in the encapsulation layer can absorb excess ultraviolet light and emit longer-wavelength blue light. On the premise of ensuring the passage of red and blue light, it can effectively shield ultraviolet rays and reduce damage to plants.
Description
Technical field
The present invention relates to a kind of light-emitting diode, particularly a kind of ultraviolet light-emitting diode of Promoting plant growth.
Background technology
In recent years, artificial light source has been applied in the middle of plant cultivation more and more widely.Research is found, chlorophyll and carotenoid are maximum to the blue light absorption ratio of 400-520 nm, the ruddiness of 610-720 nm is maximum to the contribution of photosynthesis of plant, particularly wave-length coverage is the blue light of 500-600 nm and the ruddiness of 600-700 nm, is to make photosynthetic efficiency reach the highest wave band.
Incandescent lamp, fluorescent lamp, high-pressure sodium lamp are several artificial light sources of cultivating for plant of commonly using, yet they all have certain imperfection part, have limited widespread adoption.Specifically, the luminous efficiency of incandescent lamp is not high, while irradiating plant, can produce amount of heat, the plant of easily burning.Fluorescent lamp is comparatively energy-conservation compared with incandescent lamp, but the life-span is short, and the material of its use can pollute environment.In addition, fluorescent lamp and incandescent lamp are not planar light sources, have the inhomogeneous problem of irradiating.The exposure intensity of high-pressure sodium lamp is large, and irradiated area is wide, but power consumption is large, the life-span is short, caloric value is large, has seriously restricted its application in plant cultivation field.
Light-emitting diode (Light Emitting Diode, LED) has the characteristics such as volume is little, the life-span is long, driving voltage is low, reaction speed is fast, shatter-proof, heat-resisting, thereby has obtained increasing concern in the artificial light sources field that is applied to Promoting plant growth.In order to make plant can obtain blue light and red light simultaneously, adopted the method for mixing a plurality of red LED and blue led in the past, but because the efficiency of red LED and blue led is different, obtain the illumination of specific proportion of red blue light, a blue led will be equipped with to a plurality of red LED around, so just cause the inhomogeneous situation of colour mixture, be unfavorable for farthest improving the efficiency of photosynthesis of plant.Blue led during as excitaton source, is subject to fluorescent material thickness effect larger, and because blue-light excited type fluorescent material need to have stronger absorption in 460 nm left and right, the material that meets this condition is relatively less.
On the other hand, RGB look light-emitting phosphor color can change along with the variation of temperature, driving voltage and fluorescent coating thickness.The appearance of ultraviolet LED, for LED provides new development space with fluorescent material.The high-efficiency fluorescence body that can effectively be excited by ultraviolet light is of a great variety, as silicate, oxysulfide, phosphate, vanadate, borate, aluminate etc.And take these materials as basic high-purity inorganic nano luminescent material sends black light under the exciting of ultraviolet light, be unfavorable for the growth of plant.
Summary of the invention
The present invention is directed to the deficiencies in the prior art part provides a kind of ultraviolet light-emitting diode of Promoting plant growth, by using UV LED chips as light source body, coordinate high-purity inorganic nano luminescent material, fully excitation rare-earth blue colour fluorescent powder and rare earth red fluorescent powder, send intensity large and evenly and be conducive to the light of plant growth, improve the growth efficiency of plant; By changing the composition of encapsulated layer, realize the function that absorbs the unnecessary ultraviolet light of shielding, in the time of Promoting plant growth, protective plant exempts from ultraviolet damage.
To achieve these goals, the technical solution used in the present invention is:
A kind of ultraviolet light-emitting diode of Promoting plant growth, comprise luminescent layer, encapsulated layer in base, UV LED chips, UV LED chips, it is characterized in that: the luminescent layer in described UV LED chips is mixed and formed by high-purity inorganic nano luminescent material, rareearth blue fluorescent powder and rare earth red fluorescent powder, described encapsulated layer is mixed and is formed by packaging plastic and inorganic nanometer powder, and is coated on the luminescent layer in UV LED chips.
As preferably, described high-purity inorganic nano luminescent material comprises a kind of of sulfide, oxide, fluoride, phosphate, vanadate, niobates, aluminate and molybdate, and described sulfide is zinc sulphide, lanthanum sulfide, calcium sulfide, cerium sulphide, praseodymium sulfide, neodymium sulfide, samaric sulfide or gadolinium sulfide; Described oxide is zinc oxide, yittrium oxide, titanium oxide, gadolinium oxide or luteium oxide; Described fluoride is yttrium fluoride, gadolinium fluoride, lanthanum fluoride or cerium fluoride; Described phosphate is lanthanum orthophosphate, Gadolinium monophosphate, strontium phosphate, yttrium phosphate or barium phosphate; Described vanadate is gadolinium vanadate, Yttrium Orthovanadate, vanadic acid lanthanum, cerium vanadate, vanadic acid calcium, lead vanadate or vanadic acid strontium; Described niobates is calcium niobate, niobic acid yttrium, niobic acid gadolinium or niobic acid lutetium; Described aluminate is yttrium aluminate, barium aluminate, aluminic acid gadolinium, calcium aluminate or strontium aluminate; Described molybdate is lanthanum molybdate, strontium molybdate or barium molybdate.
As preferably, described high-purity inorganic nano luminescent material structure comprises one or more structures in nano particle, nanometer rods, nanotube, nano wire and nano flower, has obvious ultraviolet or luminescence peak.
As preferably, described inorganic nanometer powder is one or more mixture of zinc oxide ultra-fine nano particle, titanium dioxide superfine nano particle, silicon dioxide superfine nano particle or ferric oxide ultra-fine nano particle.
As preferably, the particle diameter of described inorganic nanometer powder is 100-200 nm.
As preferably, described inorganic nanometer powder shared mass ratio in encapsulated layer is 5-15 %.
As preferably, described rareearth blue fluorescent powder is that emission peak is one or more combinations of chlorophosphate, aluminate or the Nitride phosphor of 400-500 nm, and described rare earth red fluorescent powder is that emission peak is one or both combinations of nitride or the sulphide fluorescent material of 600-700 nm.
As preferably, total mol ratio of described high-purity inorganic nano luminescent material and rareearth blue fluorescent powder, rare earth red fluorescent powder is 1:10, and the mol ratio of described rareearth blue fluorescent powder and rare earth red fluorescent powder is 1.5-3:1.
Compared with prior art, the invention has the advantages that:
One, the luminescent layer in UV LED chips is usingd ultraviolet source as excitaton source main body, can effectively strengthen luminous intensity, improve luminous efficiency, excite high-purity inorganic nano luminescent material, rareearth blue fluorescent powder and rare earth red fluorescent powder, make it luminous more full and uniform;
Two, in encapsulated layer, be mixed with that ultraviolet shielded ability inorganic nanometer powder can absorb unnecessary ultraviolet light and the blue light that sends longer wavelength is guaranteeing under the prerequisite that red blue light passes through, effectively shielding ultraviolet rays, reduces the injury to plant;
Three, inorganic nanometer powder and packaging plastic have fine and close structure exclusion of water, the erosion of oxygen to fluorescent powder effectively after being cross-linked;
Luminously take rareearth blue fluorescent powder and rare earth red fluorescent powder as main, inorganic nanometer powder is auxiliary, can obtain the optical band that is conducive to photosynthesis of plant, can be widely used in the aspects such as botanical seedling culturing, leaf vegetables cultivation, the production of flowers and plants.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of light-emitting diode of the present invention;
Fig. 2 is the luminescent spectrum figure of the embodiment of the present invention 1;
Fig. 3 is the luminescent spectrum figure of the embodiment of the present invention 2;
In figure: 1-base, 2-UV LED chips, the luminescent layer in 3-UV LED chips, 4-encapsulated layer.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
With reference to Fig. 1, the ultraviolet light-emitting diode of a kind of Promoting plant growth of the present invention, comprise base 1, UV LED chips 2, encapsulated layer 4, by high-purity inorganic nano luminescent material, rareearth blue fluorescent powder and rare earth red fluorescent powder mix the luminescent layer 3 in the UV LED chips forming, described encapsulated layer 4 is mixed and is formed by packaging plastic and inorganic nanometer powder, and be coated on the luminescent layer 3 in UV LED chips, under the effect of high-purity inorganic nano luminescent material, the abundant stimulated luminescence of rareearth blue fluorescent powder and rare earth red fluorescent powder, under the ultraviolet shielded effect of encapsulated layer, the luminous energy Promoting plant growth sending, and evenly soft, improve to the full extent the efficiency of plant growth.
The support that base 1 is light-emitting diode, it has good chemical stability and thermal stability, good conductivity and thermal conductivity.
UV LED chips 2 is as the luminous light source of fluorescence excitation powder, and it has good luminous power and emission wavelength to have good coupling with fluorescent material.
Luminescent layer 3 in UV LED chips is coated by ultraviolet light-emitting diode 2, encapsulated layer 4 is coated with UV LED chips 2 by the luminescent layer in UV LED chips 3, packaging plastic, high-purity inorganic nano luminescent material and inorganic nanometer powder all have higher light transmission, have good stability under varying environment.
Described rareearth blue fluorescent powder is that emission peak is one or more combinations of chlorophosphate, aluminate or the Nitride phosphor of 400-500 nm, and described rare earth red fluorescent powder is that emission peak is one or both combinations of nitride or the sulphide fluorescent material of 600-700 nm.
Below specific embodiments of the invention:
Embodiment 1:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, is mixed with chlorophosphate blue colour fluorescent powder [Ca in the luminescent layer 3 in UV LED chips
5(PO
4)
3cl/Eu], nitride red fluorescent powder [Sr
2si
5n
8/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 1.5:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano popped rice, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 150 nm Zinc oxide nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 10 %.
Embodiment 2:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, is mixed with chlorophosphate blue colour fluorescent powder [Ca in the luminescent layer 3 in UV LED chips
5(PO
4)
3cl/Eu], nitride red fluorescent powder [CaAlSiN
3/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 1.8:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano popped rice, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 150 nm Zinc oxide nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 10 %.
Embodiment 3:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, is mixed with chlorophosphate blue colour fluorescent powder [Ba in the luminescent layer 3 in UV LED chips
5(PO
4)
3cl/Eu], nitride red fluorescent powder [SrAlSiN
3/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 2.1:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano popped rice, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 150 nm Zinc oxide nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 10 %.
Embodiment 4:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, in the luminescent layer 3 in UV LED chips, is mixed with aluminate blue fluorescent powder [BaMgAl
10o
17/ Eu], nitride red fluorescent powder [Ca
2si
5n
8/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 2.5:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano popped rice, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 150 nm Zinc oxide nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 10 %.
Embodiment 5:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, in the luminescent layer 3 in UV LED chips, is mixed with aluminate blue fluorescent powder [SrMgAl
10o
17/ Eu], sulfide red fluorescent material [CaS/Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 2.8:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano popped rice, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 150 nm Zinc oxide nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 10 %.
Embodiment 6:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, in the luminescent layer 3 in UV LED chips, is mixed with aluminate blue fluorescent powder [SrMgAl
10o
17/ Eu], sulfide red fluorescent material [La
2o
2s/Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 3:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano popped rice, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 150 nm Zinc oxide nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 10 %.
Embodiment 7:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, is mixed with chlorophosphate blue colour fluorescent powder [Ca in the luminescent layer 3 in UV LED chips
5(PO
4)
3cl/Eu], nitride red fluorescent powder [Sr
2si
5n
8/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 1.5:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano popped rice, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 100 nm titania nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 15 %.
Embodiment 8:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, is mixed with chlorophosphate blue colour fluorescent powder [Ca in the luminescent layer 3 in UV LED chips
5(PO
4)
3cl/Eu], nitride red fluorescent powder [CaAlSiN
3/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 1.8:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano popped rice, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 100 nm titania nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 15 %.
Embodiment 9:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, is mixed with chlorophosphate blue colour fluorescent powder [Ba in the luminescent layer 3 in UV LED chips
5(PO
4)
3cl/Eu], nitride red fluorescent powder [SrAlSiN
3/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 2.1:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano popped rice, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 100 nm titania nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 15 %.
Embodiment 10:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, in the luminescent layer 3 in UV LED chips, is mixed with aluminate blue fluorescent powder [BaMgAl
10o
17/ Eu], nitride red fluorescent powder [Ca
2si
5n
8/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 2.5:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano popped rice, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 100 nm titania nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 15 %.
Embodiment 11:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, in the luminescent layer 3 in UV LED chips, is mixed with aluminate blue fluorescent powder [SrMgAl
10o
17/ Eu], sulfide red fluorescent material [CaS/Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 2.8:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano popped rice, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 100 nm titania nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 15 %.
Embodiment 12:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, in the luminescent layer 3 in UV LED chips, is mixed with aluminate blue fluorescent powder [SrMgAl
10o
17/ Eu], sulfide red fluorescent material [La
2o
2s/Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 3:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano popped rice, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 100 nm titania nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 15 %.
Embodiment 13:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, is mixed with chlorophosphate blue colour fluorescent powder [Ca in the luminescent layer 3 in UV LED chips
5(PO
4)
3cl/Eu], nitride red fluorescent powder [Sr
2si
5n
8/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 1.5:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano rod, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 200 nm ferric oxide nanometer particles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 5 %.
Embodiment 14:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, is mixed with chlorophosphate blue colour fluorescent powder [Ca in the luminescent layer 3 in UV LED chips
5(PO
4)
3cl/Eu], nitride red fluorescent powder [CaAlSiN
3/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 1.8:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano rod, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 200 nm ferric oxide nanometer particles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 5 %.
Embodiment 15:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, is mixed with chlorophosphate blue colour fluorescent powder [Ba in the luminescent layer 3 in UV LED chips
5(PO
4)
3cl/Eu], nitride red fluorescent powder [SrAlSiN
3/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 2.1:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano rod, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 200 nm ferric oxide nanometer particles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 5 %.
Embodiment 16:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, in the luminescent layer 3 in UV LED chips, is mixed with aluminate blue fluorescent powder [BaMgAl
10o
17/ Eu], nitride red fluorescent powder [Ca
2si
5n
8/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 2.5:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano rod, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 200 nm ferric oxide nanometer particles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 5 %.
Embodiment 17:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, in the luminescent layer 3 in UV LED chips, is mixed with aluminate blue fluorescent powder [SrMgAl
10o
17/ Eu], sulfide red fluorescent material [CaS/Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 2.8:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano rod, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 200 nm ferric oxide nanometer particles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 5 %.
Embodiment 18:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, in the luminescent layer 3 in UV LED chips, is mixed with aluminate blue fluorescent powder [SrMgAl
10o
17/ Eu], sulfide red fluorescent material [La
2o
2s/Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 3:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano rod, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 200 nm ferric oxide nanometer particles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 5 %.
Embodiment 19:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, is mixed with chlorophosphate blue colour fluorescent powder [Ca in the luminescent layer 3 in UV LED chips
5(PO
4)
3cl/Eu], nitride red fluorescent powder [Sr
2si
5n
8/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 1.5:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano rod, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 100 nm titania nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 15 %.
Embodiment 20:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, is mixed with chlorophosphate blue colour fluorescent powder [Ca in the luminescent layer 3 in UV LED chips
5(PO
4)
3cl/Eu], nitride red fluorescent powder [CaAlSiN
3/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 1.8:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano rod, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 100 nm titania nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 15 %.
Embodiment 21:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, is mixed with chlorophosphate blue colour fluorescent powder [Ba in the luminescent layer 3 in UV LED chips
5(PO
4)
3cl/Eu], nitride red fluorescent powder [SrAlSiN
3/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 2.1:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano rod, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 100 nm titania nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 15 %.
Embodiment 22:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, in the luminescent layer 3 in UV LED chips, is mixed with aluminate blue fluorescent powder [BaMgAl
10o
17/ Eu], nitride red fluorescent powder [Ca
2si
5n
8/ Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 2.5:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano rod, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 100 nm titania nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 15 %.
Embodiment 23:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, in the luminescent layer 3 in UV LED chips, is mixed with aluminate blue fluorescent powder [SrMgAl
10o
17/ Eu], sulfide red fluorescent material [CaS/Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 2.8:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano rod, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 100 nm titania nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 15 %.
Embodiment 24:
Fluorescent powder is as shown in Figure 2,3 used schematic diagram, adopts UV LED chips 2 as excitation source, in the luminescent layer 3 in UV LED chips, is mixed with aluminate blue fluorescent powder [SrMgAl
10o
17/ Eu], sulfide red fluorescent material [La
2o
2s/Eu], the mol ratio of described blue colour fluorescent powder and red fluorescence powder is 3:1, described high-purity inorganic nano luminescent material adopts zinc oxide nano rod, with total mol ratio of luminescent layer 3 in UV LED chips be 1:10, it is 100 nm titania nanoparticles that described inorganic nanometer powder is selected particle diameter, and in encapsulated layer 4, shared mass ratio is 15 %.
The embodiment of the present invention is better embodiment, but its concrete enforcement is not limited to this, and those of ordinary skill in the art is very easily according to above-described embodiment; understand spirit of the present invention; and make different amplifications and variation, and only otherwise depart from the present invention, within all belonging to protection scope of the present invention.
Claims (8)
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| CN109638145A (en) * | 2018-11-22 | 2019-04-16 | 华南农业大学 | Red blue light glass ceramics turns optical assembly, preparation method and plant lamp |
| CN110364596A (en) * | 2019-07-30 | 2019-10-22 | 广东省半导体产业技术研究院 | Complementary color LED device and preparation method of complementary color LED device |
| CN115948062B (en) * | 2022-12-26 | 2024-05-14 | 兰州大学 | High color rendering inorganic red pigment and preparation method thereof and application of fluorescent powder in improving color rendering performance of inorganic red pigment |
| CN120344067A (en) * | 2025-06-17 | 2025-07-18 | 长春希达电子技术有限公司 | A high-light-efficiency stacked package COB light source and its manufacturing method |
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