CN103551957B - Single side polishing machine - Google Patents
Single side polishing machine Download PDFInfo
- Publication number
- CN103551957B CN103551957B CN201310534409.7A CN201310534409A CN103551957B CN 103551957 B CN103551957 B CN 103551957B CN 201310534409 A CN201310534409 A CN 201310534409A CN 103551957 B CN103551957 B CN 103551957B
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- cylinder
- polishing machine
- grinding platen
- side polishing
- platen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 title claims abstract description 26
- 229910052573 porcelain Inorganic materials 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 description 14
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
Description
技术领域technical field
本发明涉及抛光机,特别涉及一种单面抛光机。The invention relates to a polishing machine, in particular to a single-side polishing machine.
背景技术Background technique
半导体晶片(如硅片、砷化镓、锗片、蓝宝石、磷化铟等)抛光时,单片抛光机抛光盘的平坦度控制是影响到晶片抛光精度的关键技术。目前的单面抛光机,由于抛光盘与研磨上盘在工作时不同半径线速度不一样,仅靠单一平面来加压,造成内外的厚度不一致,影响晶片质量。When polishing semiconductor wafers (such as silicon wafers, gallium arsenide, germanium wafers, sapphire, indium phosphide, etc.), the flatness control of the polishing disc of the single-chip polishing machine is a key technology that affects the wafer polishing accuracy. The current single-side polishing machine, because the polishing disc and the grinding upper disc have different radii and linear speeds during work, only a single plane is used to pressurize, resulting in inconsistent thickness inside and outside, which affects the quality of the wafer.
发明内容Contents of the invention
本发明提供一种单面抛光机,以克服现有技术中单面抛光机抛光晶片时厚度不一致的问题。The invention provides a single-side polishing machine to overcome the problem of inconsistent thickness when the single-side polishing machine polishes wafers in the prior art.
为解决上述技术问题,本发明提供一种单面抛光机,包括:机壳,设置在所述机壳内的抛盘、研磨压盘、气缸和旋转电机,所述研磨压盘设置在所述抛盘上方,所述气缸和旋转电机分别控制所述研磨压盘上下动作和旋转,并且所述研磨压盘的内部设置有中心气缸。In order to solve the above technical problems, the present invention provides a single-sided polishing machine, comprising: a casing, a throwing plate arranged in the casing, a grinding platen, a cylinder and a rotating motor, and the grinding platen is arranged on the throwing plate Above, the air cylinder and the rotating motor respectively control the up and down movement and rotation of the grinding platen, and a central air cylinder is arranged inside the grinding platen.
作为优选,所述抛盘周围设置有多个回转气缸。Preferably, a plurality of rotary cylinders are arranged around the throwing plate.
作为优选,所述研磨压盘还包括:瓷盘、顶板、顶盘以及外环,其中,所述顶盘设置于所述外环的顶部并与所述气缸固接,中心气缸设置于所述外环中心并与顶板接触,所述瓷盘固定于外环底部。Preferably, the grinding platen also includes: a porcelain plate, a top plate, a top plate and an outer ring, wherein the top plate is arranged on the top of the outer ring and fixedly connected to the cylinder, and the central cylinder is arranged on the The center of the outer ring is in contact with the top plate, and the porcelain plate is fixed on the bottom of the outer ring.
作为优选,所述顶盘中设有与所述中心气缸对应的进气口。Preferably, the top plate is provided with an air inlet corresponding to the central cylinder.
作为优选,所述研磨压盘设置有两组。Preferably, the grinding platen is provided with two groups.
作为优选,所述机壳上还设置有控制面板。Preferably, a control panel is also arranged on the casing.
与现有技术相比,本发明具有以下优点:本发明采用中心气缸加压的方式使研磨压盘的底部产生一定量的变形量,从而提高晶片厚度的一致性。Compared with the prior art, the present invention has the following advantages: the present invention adopts the central air cylinder to pressurize the bottom of the grinding platen to produce a certain amount of deformation, thereby improving the consistency of wafer thickness.
附图说明Description of drawings
图1为本发明一具体实施方式中单面抛光机的主视图;Fig. 1 is the front view of a single-side polishing machine in a specific embodiment of the present invention;
图2为本发明一具体实施方式中单面抛光机的研磨压盘的结构示意图;Fig. 2 is a schematic structural view of a grinding platen of a single-side polishing machine in a specific embodiment of the present invention;
图3为本发明一具体实施方式中单面抛光机的后视图。Fig. 3 is a rear view of a single-side polishing machine in a specific embodiment of the present invention.
图中:10-机壳,20-抛盘、30-研磨压盘、301-中心气缸、302-顶盘、303-顶板、304-瓷盘、305-外环、306-进气口、40-气缸、50-回转气缸、60-控制面板。In the figure: 10-chassis, 20-throwing plate, 30-grinding pressure plate, 301-central cylinder, 302-top plate, 303-top plate, 304-porcelain plate, 305-outer ring, 306-air inlet, 40- Cylinder, 50-turn cylinder, 60-control panel.
具体实施方式detailed description
为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合附图对本发明的具体实施方式做详细的说明。需说明的是,本发明附图均采用简化的形式且均使用非精准的比例,仅用以方便、明晰地辅助说明本发明实施例的目的。In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that all the drawings of the present invention are in simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
请参照图1~3,本发明的单面抛光机,包括:机壳10,设置在所述机壳10内的抛盘20、研磨压盘30、气缸40和旋转电机,所述研磨压盘30设置在所述抛盘20上方,所述气缸40和旋转电机分别控制所述研磨压盘30上下动作和旋转,并且所述研磨压盘30的内部设置有中心气缸301。具体地,所述旋转电机用于控制所述研磨压盘30旋转,所述气缸40控制所述研磨压盘30上升或下降,而中心气缸301在所述研磨压盘30压住晶片时工作,使研磨压盘30底部产生变形量,进而使晶片的中心与周围的研磨厚度一致。因此,本发明采用中心气缸301加压的方式使研磨压盘30的底部产生一定量的变形量,从而提高晶片厚度的一致性。Please refer to Figs. 1-3, the single-side polishing machine of the present invention includes: a casing 10, a throwing plate 20 arranged in the casing 10, a grinding platen 30, a cylinder 40 and a rotating motor, the grinding platen 30 Arranged above the throwing plate 20 , the air cylinder 40 and the rotating motor respectively control the vertical movement and rotation of the grinding platen 30 , and a central air cylinder 301 is arranged inside the grinding platen 30 . Specifically, the rotating motor is used to control the rotation of the grinding platen 30, the cylinder 40 controls the lifting or lowering of the grinding platen 30, and the central cylinder 301 works when the grinding platen 30 presses the wafer, The bottom of the grinding platen 30 is deformed so that the grinding thickness of the center of the wafer is consistent with that of the surrounding area. Therefore, in the present invention, the central cylinder 301 is used to pressurize the bottom of the grinding platen 30 to produce a certain amount of deformation, thereby improving the consistency of the wafer thickness.
请继续参照图1~3,作为优选,所述抛盘20周围设置有多个回转气缸50,用于控制所述抛盘20旋转,进一步的,所述研磨压盘30设置有两组,可以对多个晶片进行同时抛光,提高生产效率。Please continue to refer to Figures 1 to 3. As a preference, multiple rotary cylinders 50 are arranged around the throwing plate 20 to control the rotation of the throwing plate 20. Further, the grinding platen 30 is provided with two groups, which can be used for multiple Wafers can be polished at the same time to improve production efficiency.
请重点参照图2,所述研磨压盘30还包括:瓷盘304、顶板303、顶盘302以及外环305,其中,所述顶盘302设置于所述外环305的顶部并与所述气缸40固接,中心气缸301设置于所述外环305中心并与顶板303接触,所述瓷盘304固定于外环305底部。进一步的,所述顶盘302中设有与所述中心气缸301对应的进气口306。如图2中虚线所示,当研磨压盘30工作时,气缸40带动研磨压盘30向下动作,中心气缸301动作,通过顶板303对磁盘304动作,使磁盘304产生一定的变形量(如图2中的虚线所示),确保抛盘20和研磨压盘30旋转时,晶片中心与四周的抛光量,从而提高晶片厚度的一致性。Please refer to Fig. 2 emphatically, the described grinding platen 30 also includes: a porcelain plate 304, a top plate 303, a top plate 302 and an outer ring 305, wherein the top plate 302 is arranged on the top of the outer ring 305 and is connected to the The cylinder 40 is fixedly connected, the central cylinder 301 is arranged at the center of the outer ring 305 and contacts the top plate 303 , and the porcelain plate 304 is fixed at the bottom of the outer ring 305 . Further, the top plate 302 is provided with an air inlet 306 corresponding to the central cylinder 301 . As shown by the dotted line in Figure 2, when the grinding platen 30 was working, the cylinder 40 drove the grinding platen 30 to move downward, and the central cylinder 301 moved to move the magnetic disk 304 through the top plate 303, so that the magnetic disk 304 produced a certain amount of deformation (such as Shown by the dotted line in FIG. 2 ), to ensure the polishing amount of the center and periphery of the wafer when the throwing plate 20 and the grinding platen 30 rotate, thereby improving the consistency of the wafer thickness.
请参照图3,所述机壳10上还设置有控制面板60,用于调节所述单面抛光机中的各种参数,并可以通过控制面板60监控所述单面抛光机动作。Referring to FIG. 3 , a control panel 60 is provided on the casing 10 for adjusting various parameters in the single-side polishing machine, and the operation of the single-side polishing machine can be monitored through the control panel 60 .
综上所述,本发明的单面抛光机,包括:机壳10,设置在所述机壳10内的抛盘20、研磨压盘30、气缸40和旋转电机,所述研磨压盘30设置在所述抛盘20上方,所述气缸40和旋转电机分别控制所述研磨压盘30上下动作和旋转,并且所述研磨压盘30的内部设置有中心气缸301。本发明采用中心气缸301加压的方式使研磨压盘30的底部产生一定量的变形量,从而提高晶片厚度的一致性。In summary, the single-side polishing machine of the present invention includes: a casing 10, a throwing plate 20 arranged in the casing 10, a grinding platen 30, a cylinder 40 and a rotating motor, and the grinding platen 30 is arranged on Above the throwing plate 20 , the air cylinder 40 and the rotating motor respectively control the vertical movement and rotation of the grinding platen 30 , and a central air cylinder 301 is arranged inside the grinding platen 30 . In the present invention, the central cylinder 301 is used to pressurize the bottom of the grinding platen 30 to produce a certain amount of deformation, thereby improving the consistency of the wafer thickness.
显然,本领域的技术人员可以对发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包括这些改动和变型在内。Obviously, those skilled in the art can make various changes and modifications to the invention without departing from the spirit and scope of the invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and equivalent technologies thereof, the present invention also intends to include these modifications and variations.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310534409.7A CN103551957B (en) | 2013-11-01 | 2013-11-01 | Single side polishing machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310534409.7A CN103551957B (en) | 2013-11-01 | 2013-11-01 | Single side polishing machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103551957A CN103551957A (en) | 2014-02-05 |
| CN103551957B true CN103551957B (en) | 2016-04-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310534409.7A Active CN103551957B (en) | 2013-11-01 | 2013-11-01 | Single side polishing machine |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106041721B (en) * | 2016-07-26 | 2019-01-08 | 苏州赫瑞特电子专用设备科技有限公司 | A kind of upper lower burrs self-balancing mechanism of grinder or polishing machine |
| CN114871941B (en) * | 2022-04-25 | 2024-04-05 | 季华实验室 | Polishing head and polishing machine |
| CN116175305B (en) * | 2023-04-26 | 2023-07-04 | 北京特思迪半导体设备有限公司 | Platen structure for processing flat workpiece, apparatus and attitude control method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5400548A (en) * | 1992-07-23 | 1995-03-28 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for manufacturing semiconductor wafers having deformation ground in a defined way |
| CN1271306A (en) * | 1997-09-26 | 2000-10-25 | Memc电子材料有限公司 | Wafer processing apparatus |
| CN201632921U (en) * | 2010-01-28 | 2010-11-17 | 湖南永创机电设备有限公司 | High-accuracy oversized single side polishing machine |
| CN203003626U (en) * | 2012-12-10 | 2013-06-19 | 长沙永凯科技设备有限公司 | High-precision super large size single face polishing machine |
| CN203003663U (en) * | 2012-11-30 | 2013-06-19 | 长沙永凯科技设备有限公司 | Dual-driven single-sided polishing machine |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5180557B2 (en) * | 2007-10-31 | 2013-04-10 | 株式会社ディスコ | Processing equipment |
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2013
- 2013-11-01 CN CN201310534409.7A patent/CN103551957B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5400548A (en) * | 1992-07-23 | 1995-03-28 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process for manufacturing semiconductor wafers having deformation ground in a defined way |
| CN1271306A (en) * | 1997-09-26 | 2000-10-25 | Memc电子材料有限公司 | Wafer processing apparatus |
| CN201632921U (en) * | 2010-01-28 | 2010-11-17 | 湖南永创机电设备有限公司 | High-accuracy oversized single side polishing machine |
| CN203003663U (en) * | 2012-11-30 | 2013-06-19 | 长沙永凯科技设备有限公司 | Dual-driven single-sided polishing machine |
| CN203003626U (en) * | 2012-12-10 | 2013-06-19 | 长沙永凯科技设备有限公司 | High-precision super large size single face polishing machine |
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| CN103551957A (en) | 2014-02-05 |
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