CN103401143B - A kind of miniwatt laser diode and coupling process - Google Patents
A kind of miniwatt laser diode and coupling process Download PDFInfo
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- CN103401143B CN103401143B CN201310264900.2A CN201310264900A CN103401143B CN 103401143 B CN103401143 B CN 103401143B CN 201310264900 A CN201310264900 A CN 201310264900A CN 103401143 B CN103401143 B CN 103401143B
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- laser diode
- light
- miniwatt
- diode chip
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- 238000010168 coupling process Methods 0.000 title claims description 11
- 239000000919 ceramic Substances 0.000 claims description 13
- 238000003780 insertion Methods 0.000 claims description 13
- 230000037431 insertion Effects 0.000 claims description 13
- 239000013307 optical fiber Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 239000000047 product Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- Optical Couplings Of Light Guides (AREA)
Abstract
The present invention discloses a kind of miniwatt laser diode, comprise base, with base fix heat sink, be connected to heat sink on laser diode chip, pipe cap, described laser diode chip is between base and pipe cap, the forward light light-emitting area of laser diode chip is towards base, and the light-emitting area of light dorsad of laser diode chip is towards pipe cap.Due to the light dorsad that the light-emitting area of light dorsad of laser diode chip sends, the forward light sent than forward light light-emitting area is little, then the method can obtain low power laser diode chip.
Description
Technical field
The present invention relates to fields of light devices, especially a kind of laser diode.
Background technology
The luminous power of conventional laser diode is comparatively large, and coupling efficiency is also higher, and the luminous power of the light emission secondary module obtained that is coupled is also larger.When the light emission secondary module needing making luminous power little, adopt mode optical coupling being left under order Best Coupling state, coupling efficiency is reduced, the final light emission secondary module obtaining less luminous power.The method is owing to being the mode adopting coupling out of focus, and make the luminous power of final product light emission secondary module stable not, the property at high and low temperature of product and long-time stability have the situation of deterioration.
In order to improve the stability of product, need to provide a kind of new technical scheme to solve the problem.
Summary of the invention
The object of the invention is the deficiency existed for prior art, a kind of miniwatt laser diode is provided.
For achieving the above object, miniwatt laser diode of the present invention can adopt following technical scheme:
A kind of miniwatt laser diode, comprise base, with base fix heat sink, be connected to heat sink on laser diode chip, pipe cap, described laser diode chip is between base and pipe cap, the forward light light-emitting area of laser diode chip is towards base, and the light-emitting area of light dorsad of laser diode chip is towards pipe cap.
Compared with background technology, the light dorsad that the light-emitting area of light dorsad due to laser diode chip sends, the forward light sent than forward light light-emitting area is little, then the method can obtain low power laser diode chip.
The coupling process of above-mentioned miniwatt laser diode is:
There is provided the ceramic insertion core of operation of carrying out with miniwatt laser diode being coupled, miniwatt laser diode launches laser, is coupled in the optical fiber in ceramic insertion core in the end of ceramic insertion core; Due to the light dorsad that the light-emitting area of light dorsad of laser diode chip sends, the forward light sent than forward light light-emitting area is little, then the method can obtain low power laser diode; And adopt this low power laser diode and ceramic insertion core to be coupled, when reaching optimum state when being coupled, still can obtain the small-power light emission secondary module that luminous power is less.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of miniwatt laser diode of the present invention when being coupled with ceramic insertion core.
Fig. 2 is the structural representation of miniwatt laser diode of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, illustrate the present invention further, these embodiments should be understood only be not used in for illustration of the present invention and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
Refer to shown in Fig. 1 and Fig. 2, the present invention discloses a kind of miniwatt laser diode 1, heat sink 12, the laser diode chip 13 be connected on heat sink 12, the pipe cap 14 that comprise base 11, fix with base 11.Described laser diode chip 13 is between base 11 and pipe cap 14, and the forward light light-emitting area 301 of laser diode chip 13 is towards base 11, and the light-emitting area of light dorsad 302 of laser diode chip 13 is towards pipe cap 14.Described pipe cap 14 is positioned at one end that small-power light emission secondary module 1 launches laser.Wherein, the light dorsad that the light-emitting area of light dorsad 302 due to laser diode chip 13 sends, the forward light sent than forward light light-emitting area 301 is little, then the method can obtain low power laser diode chip 13, thus obtains miniwatt laser diode 1.
The coupling process of this miniwatt laser diode is: provide the ceramic insertion core 2 of operation of carrying out with small-power ray laser diode 1 being coupled and small-power ray laser diode 1 and ceramic insertion core 2 be positioned in same light path.Laser diode chip 13 in miniwatt laser diode 1 launches laser, is coupled in the optical fiber (not shown) in ceramic insertion core 2 in the end of ceramic insertion core 2.As previously mentioned, the light dorsad that the light-emitting area of light dorsad 302 due to laser diode chip 13 sends, the forward light sent than forward light light-emitting area 301 is little, then the method can obtain low power laser diode chip 13.And adopt this low power laser diode 1 and ceramic insertion core 2 to be coupled, when reaching optimum state when being coupled, the small-power light emission secondary module that luminous power is less can be obtained.
Due to this scheme, under coupling optimum state, obtain the light emission secondary module that luminous power is little, the properties of product such as property at high and low temperature, long-time stability of product are better than traditional little luminous power light emission secondary module.
Claims (3)
1. a miniwatt laser diode, it is characterized in that: comprise base, with base fix heat sink, be connected to heat sink on laser diode chip, pipe cap, described laser diode chip is between base and pipe cap, the forward light light-emitting area of laser diode chip is towards base, and the light-emitting area of light dorsad of laser diode chip is towards pipe cap.
2. miniwatt laser diode according to claim 1, is characterized in that: described pipe cap is positioned at one end that miniwatt laser diode launches laser.
3. the coupling process of miniwatt laser diode as claimed in claim 1, is characterized in that:
There is provided the ceramic insertion core of operation of carrying out with miniwatt laser diode being coupled, the miniwatt laser diode in small-power light emission secondary module launches laser, and this laser is coupled in the end of ceramic insertion core in the optical fiber in ceramic insertion core.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310264900.2A CN103401143B (en) | 2013-06-26 | 2013-06-26 | A kind of miniwatt laser diode and coupling process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310264900.2A CN103401143B (en) | 2013-06-26 | 2013-06-26 | A kind of miniwatt laser diode and coupling process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103401143A CN103401143A (en) | 2013-11-20 |
| CN103401143B true CN103401143B (en) | 2015-09-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310264900.2A Active CN103401143B (en) | 2013-06-26 | 2013-06-26 | A kind of miniwatt laser diode and coupling process |
Country Status (1)
| Country | Link |
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| CN (1) | CN103401143B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1059711A2 (en) * | 1999-06-10 | 2000-12-13 | Sumitomo Electric Industries, Ltd. | Semiconductor laser module |
| CN1746710A (en) * | 2004-09-06 | 2006-03-15 | 三菱电机株式会社 | Optical Transceiver Module |
| CN1926727A (en) * | 2004-03-03 | 2007-03-07 | 菲尼萨公司 | Transmitter and receiver optical sub-assemblies with optical limiting elements |
| CN101689746A (en) * | 2007-03-19 | 2010-03-31 | 金定洙 | Self-standing parallel plate beam splitter, manufacturing method thereof and laser diode packaging body structure using self-standing parallel plate beam splitter |
| CN203339471U (en) * | 2013-06-26 | 2013-12-11 | 江苏奥雷光电有限公司 | Low power laser diode |
-
2013
- 2013-06-26 CN CN201310264900.2A patent/CN103401143B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1059711A2 (en) * | 1999-06-10 | 2000-12-13 | Sumitomo Electric Industries, Ltd. | Semiconductor laser module |
| CN1926727A (en) * | 2004-03-03 | 2007-03-07 | 菲尼萨公司 | Transmitter and receiver optical sub-assemblies with optical limiting elements |
| CN1746710A (en) * | 2004-09-06 | 2006-03-15 | 三菱电机株式会社 | Optical Transceiver Module |
| CN101689746A (en) * | 2007-03-19 | 2010-03-31 | 金定洙 | Self-standing parallel plate beam splitter, manufacturing method thereof and laser diode packaging body structure using self-standing parallel plate beam splitter |
| CN203339471U (en) * | 2013-06-26 | 2013-12-11 | 江苏奥雷光电有限公司 | Low power laser diode |
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| Publication number | Publication date |
|---|---|
| CN103401143A (en) | 2013-11-20 |
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