CN103137883B - The compound encapsulation structure of a kind of organic electroluminescence device and method for packing thereof - Google Patents
The compound encapsulation structure of a kind of organic electroluminescence device and method for packing thereof Download PDFInfo
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- CN103137883B CN103137883B CN201110381848.XA CN201110381848A CN103137883B CN 103137883 B CN103137883 B CN 103137883B CN 201110381848 A CN201110381848 A CN 201110381848A CN 103137883 B CN103137883 B CN 103137883B
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- 238000005401 electroluminescence Methods 0.000 title claims abstract description 61
- 238000005538 encapsulation Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 36
- 150000001875 compounds Chemical class 0.000 title claims abstract description 33
- 238000012856 packing Methods 0.000 title claims abstract description 15
- 239000010410 layer Substances 0.000 claims abstract description 197
- 230000003647 oxidation Effects 0.000 claims abstract description 63
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 150000004767 nitrides Chemical class 0.000 claims abstract description 31
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000004411 aluminium Substances 0.000 claims abstract description 20
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 19
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 19
- 239000002346 layers by function Substances 0.000 claims abstract description 18
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 17
- 229910052788 barium Inorganic materials 0.000 claims abstract description 15
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- 239000011241 protective layer Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 180
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 19
- 239000002356 single layer Substances 0.000 claims description 14
- 229920000728 polyester Polymers 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 12
- 239000003292 glue Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 238000007738 vacuum evaporation Methods 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 6
- 229920002799 BoPET Polymers 0.000 abstract description 20
- 230000006378 damage Effects 0.000 abstract description 7
- 230000003628 erosive effect Effects 0.000 abstract description 6
- 239000011521 glass Substances 0.000 description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 23
- 230000005540 biological transmission Effects 0.000 description 23
- 239000001301 oxygen Substances 0.000 description 23
- 229910052760 oxygen Inorganic materials 0.000 description 23
- 230000027756 respiratory electron transport chain Effects 0.000 description 22
- 238000002347 injection Methods 0.000 description 21
- 239000007924 injection Substances 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 239000002131 composite material Substances 0.000 description 15
- 230000035699 permeability Effects 0.000 description 14
- 239000003822 epoxy resin Substances 0.000 description 12
- 229920000647 polyepoxide Polymers 0.000 description 12
- 239000004593 Epoxy Substances 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- -1 thickness 100nm Substances 0.000 description 1
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Abstract
The invention provides the compound encapsulation structure of a kind of organic electroluminescence device and method for packing thereof. This compound encapsulation structure, including anode substrate, functional layer, luminescent layer, metallic cathode and encapsulated layer, anode substrate and encapsulated layer form a closing space, functional layer, luminescent layer and metallic cathode are contained in this closing space, encapsulated layer includes nitride film, oxidation film successively and is loaded with the PET film of metallic aluminium, and oxidation film is A12O3, BeO and Ga2O3In film one or more and doped with the film of one or more formation in metallic element Ca, Ba, Sr and Mg, between metallic cathode and nitride film, be provided with SiO film as protective layer. This compound encapsulation structure can efficiently reduce the steam erosion to organic electroluminescence device, significantly increases the life-span of organic electroluminescence device, and metallic cathode can be protected to exempt from destruction. The inventive method is particularly suited for encapsulation flexible organic electroluminescent device.
Description
Technical field
The invention belongs to the encapsulation of organic electroluminescence device, be specifically related to compound encapsulation structure and the method for packing thereof of a kind of organic electroluminescence device.
Background technology
Organic electroluminescence device (OLED) is based on a kind of current mode light emitting semiconductor device of organic material. Its typical structure is to accompany multilamellar organic material film (hole injection layer, hole transmission layer, luminescent layer, electron supplying layer and electron injecting layer) between transparent anode and metallic cathode, after applying certain voltage when between electrode, luminescent layer will be luminous. In recent years, organic electroluminescence device owing to cost of manufacture own is low, response time is short, luminosity is high, the feature such as wide viewing angle, low driving voltage and energy-conserving and environment-protective received extensive concern, and has been considered as the device of new generation being most likely at and occupying dominance on the illumination in future and display device market in fields such as total colouring, backlight and illuminations.
At present, there is life-span shorter problem in organic electroluminescence device, it is very loose that this is primarily due to organic material film, occurs rapidly aging after easily being penetrated into by compositions such as the steam in air and oxygen. Therefore, must being packaged before organic electroluminescence device entrance is actually used, the quality of encapsulation is directly connected to the life-span of organic electroluminescence device.
Conventional art adopt glass cover or crown cap are packaged, its edge ultraviolet polymerization resin seal, but the glass cover used in this method or crown cap volume are often relatively big, add the weight of device, and the method may not apply to flexible organic electroluminescence and gives out light the encapsulation of device. At present, introduction is had been reported by SiNXOr SiOXBeing arranged on metal cathode surface etc. inorganic material by methods such as magnetron sputterings, as the encapsulated layer of organic electroluminescence device, but when the high-temperature operation of magnetron sputtering, metal cathode surface is subject to destruction.
Summary of the invention
For overcoming the defect of above-mentioned prior art, the invention provides the compound encapsulation structure of a kind of organic electroluminescence device and method for packing thereof. This compound encapsulation structure can efficiently reduce the steam erosion to organic electroluminescence device, significantly increases the life-span of organic electroluminescence device, and metallic cathode can be protected to exempt from destruction. The inventive method is applicable to the organic electroluminescence device that encapsulation is prepared with conducting glass substrate, is also applied for the flexible organic electroluminescent device that encapsulation is prepared for substrate with plastics (such as PET film) or metal. The inventive method is particularly suited for encapsulation flexible organic electroluminescent device.
On the one hand, the invention provides the compound encapsulation structure of a kind of organic electroluminescence device, including anode substrate, functional layer, luminescent layer, metallic cathode and encapsulated layer, anode substrate and encapsulated layer form a closing space, functional layer, luminescent layer and metallic cathode are contained in this closing space, wherein, described encapsulated layer includes nitride film, oxidation film successively and is loaded with the high temperature resistance polyester thin film of metallic aluminium, and oxidation film is Al2O3, BeO and Ga2O3In film one or more and doped with the film of one or more formation in metallic element Ca, Ba, Sr and Mg, between metallic cathode and nitride film, be provided with SiO film as protective layer.
Preferably, anode substrate is conducting glass substrate or conducting PET film (high temperature resistance polyester thin film) substrate.
Functional layer generally includes hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer. Luminescent layer is arranged between hole transmission layer and electron transfer layer. Preferably, functional layer and luminescent layer are the method setting of the method by vacuum evaporation or solution coating.
Metallic cathode can be non-transparent metals negative electrode (aluminum, silver, gold etc.), it is also possible to for transparent cathode (dielectric layer/metal level/dielectric layer etc.).
Encapsulated layer includes nitride film, oxidation film successively and is loaded with the high temperature resistance polyester thin film (PET film) of metallic aluminium.
Nitride film can extend water Oxygen permeation path. Preferably, nitride film is SiN film, Si3N4Film or AlN film. Preferably, nitride film is monolayer, and the thickness of monolayer is 100��150nm. Nitride film can also be two-layer or multilamellar.
Oxidation film is Al2O3, BeO and Ga2O3In film one or more and doped with the film of one or more formation in metallic element Ca, Ba, Sr and Mg. Ca, Ba, Sr and Mg are high-hydroscopicity material, at Al2O3, BeO and Ga2O3One or more the efficiently reduced steam adulterated in Ca, Ba, Sr and Mg in one or more in the film erosion to organic electroluminescence device, significantly increases the life-span of organic electroluminescence device. Preferably, oxidation film is monolayer, and the thickness of monolayer is 100��150nm. Oxidation film can also be two-layer or multilamellar. One or more doping in Ca, Ba, Sr and Mg in oxidation film can strengthen water and oxygen barrier property. Preferably, in oxidation film, the quality of doped metallic elements accounts for the 20��35% of oxidation film gross mass.
SiO film it is provided with as protective layer between metallic cathode and nitride film. The existence of SiO film can protect metallic cathode to exempt from destruction when the high-temperature operation of follow-up magnetron sputtering. Preferably, the thickness of SiO film is 100��150nm.
Preferably, UV glue is epoxy resin. Preferably, the thickness of UV glue is 1��1.5 ��m.
On the other hand, the invention provides the method for packing of a kind of organic electroluminescence device, comprise the following steps:
(1) on anode substrate, functional layer, luminescent layer and metallic cathode are prepared;
(2) SiO film is prepared as protective layer by the mode of vacuum evaporation at metal cathode surface;
(3) nitride film is prepared by the mode of magnetron sputtering on SiO film surface;
(4) preparing oxidation film by the mode of magnetron sputtering on nitride film surface, oxidation film is Al2O3, BeO and Ga2O3In film one or more and doped with the film of one or more formation in metallic element Ca, Ba, Sr and Mg;
(5) the high temperature resistance polyester thin film of metallic aluminium it is loaded with in the preparation of nitride film surface;
(6) at SiO film, nitride film, oxidation film, the high temperature resistance polyester thin film being loaded with metallic aluminium and anode substrate edge-coating UV glue, by the dry curable UV glue of the mode of ultraviolet curing, then solidify with UV light, seal and form a closing space, functional layer, luminescent layer and metallic cathode are contained in this closing space.
Step (1) is prepare functional layer, luminescent layer and metallic cathode on anode substrate.
Preferably, anode substrate is conducting glass substrate or conducting PET film (high temperature resistance polyester thin film) substrate.
Functional layer generally includes hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer. Luminescent layer is arranged between hole transmission layer and electron transfer layer. Preferably, functional layer and luminescent layer are the method setting of the method by vacuum evaporation or solution coating.
Metallic cathode can be non-transparent metals negative electrode (aluminum, silver, gold etc.), it is also possible to for transparent cathode (dielectric layer/metal level/dielectric layer etc.).
Step (2) is for prepare SiO film as protective layer by the mode of vacuum evaporation at metal cathode surface. The existence of SiO film can protect metallic cathode to exempt from destruction when the high-temperature operation of follow-up magnetron sputtering. Preferably, the thickness of SiO film is 100��150nm.
Step (3) is for prepare nitride film by the mode of magnetron sputtering on SiO film surface. Nitride film can extend water Oxygen permeation path. Preferably, the background vacuum in step (3) magnetron sputtering process is 2 �� 10-4Pa. Preferably, nitride film is SiN film, Si3N4Film or AlN film. Preferably, nitride film is monolayer, and the thickness of monolayer is 100��150nm. Nitride film can also be two-layer or multilamellar.
For to prepare oxidation film by the mode of magnetron sputtering on nitride film surface, oxidation film is Al to step (4)2O3, BeO and Ga2O3In film one or more and doped with the film of one or more formation in metallic element Ca, Ba, Sr and Mg. Ca, Ba, Sr and Mg are high-hydroscopicity material, at Al2O3, BeO and Ga2O3In one or more in film, one or more the extended water Oxygen permeation paths in doped metallic elements Ca, Ba, Sr and Mg, efficiently reduce the steam erosion to organic electroluminescence device, significantly increase the life-span of organic electroluminescence device.
Preferably, the quality of doped metallic elements accounts for the 20��35% of oxidation film gross mass.
Preferably, oxidation film is monolayer, and the thickness of monolayer is 100��150nm. Oxidation film can also be two-layer or multilamellar.
Preferably, step (4) is adopt at least one target in Al, Be and Ga to carry out magnetron sputtering with at least one in Ca, Ba, Sr and Mg. Preferably, passing into oxygen and argon in step (4) magnetron sputtering process, oxygen volume content accounts for the 1%��15% of total gas volume. It is highly preferred that step (4) magnetron sputtering process passes into oxygen volume content account for the 8% of total gas volume. Preferably, the background vacuum in step (4) magnetron sputtering process is 2 �� 10-4Pa��
Step (5) is be loaded with the high temperature resistance polyester thin film (PET film) of metallic aluminium in the preparation of nitride film surface.
Step (6) is at SiO film, nitride film, oxidation film, the high temperature resistance polyester thin film (PET film) being loaded with metallic aluminium and anode substrate edge-coating UV glue, by the dry curable UV glue of the mode of ultraviolet curing, then solidify with UV light, seal and form a closing space, functional layer, luminescent layer and metallic cathode are contained in this closing space.
Preferably, UV glue is epoxy resin. Preferably, the thickness of UV glue is 1��1.5 ��m.
Preferably, the light intensity 10��15mW/cm of UV light2, time of exposure 300��400s.
The present invention can pass through repeatedly to repeat step (3) and (4) formation multilayer encapsulation layer, thus reaching excellent packaging effect.
The invention provides the compound encapsulation structure of a kind of organic electroluminescence device and method for packing has the advantages that
(1) compound encapsulation structure of the present invention can efficiently reduce the steam erosion to organic electroluminescence device, significantly increases the life-span of organic electroluminescence device, and metallic cathode can be protected to exempt from destruction;
(2) the inventive method is applicable to the organic electroluminescence device that encapsulation is prepared for anode substrate with electro-conductive glass, is also applied for the flexible organic electroluminescent device that encapsulation is prepared for anode substrate with plastics (such as PET film) or metal. The inventive method is particularly suited for encapsulation flexible organic electroluminescent device;
(3) compound encapsulation structure material of the present invention is cheap, and method for packing technique is simple, and prepared by easy large area, be suitable to industrialization large-scale use.
Accompanying drawing explanation
Fig. 1 is the structural representation of the compound encapsulation structure of the embodiment of the present invention 1 organic electroluminescence device;
Fig. 2 is the life time decay curve chart of the compound encapsulation structure of the embodiment of the present invention 9��11 organic electroluminescence device.
Detailed description of the invention
The following stated is the preferred embodiment of the present invention. It should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention, it is also possible to make some improvement and adjustment, these improve and adjustment is also considered as in protection scope of the present invention.
Embodiment 1:
Fig. 1 is the structural representation of the compound encapsulation structure of the present embodiment organic electroluminescence device.
A kind of compound encapsulation structure of organic electroluminescence device, as it is shown in figure 1, include conducting PET film (high temperature resistance polyester thin film) substrate 1, hole injection layer 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, electron injecting layer 6, metallic cathode 7 and encapsulated layer 8 successively. Conducting PET film (high temperature resistance polyester thin film) substrate 1 and encapsulated layer 8 form a closing space by epoxy sealing, and hole injection layer 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, electron injecting layer 6 and metallic cathode 7 are contained in this closing space. Described encapsulated layer 8 includes SiO film 81 that a layer thickness is 100nm successively, a layer thickness is that (oxidation film is the Al doped with Ca, Mg and Sr for 82, one layer of oxidation film of SiN film 83 of 150nm2O3Film, oxidation film gross mass be 0.8g, Ca, Mg and Sr quality account for the 9% of oxidation film gross mass, 6% and 9% respectively, oxide film thickness is 100nm) and be loaded with the PET film 84 of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 2.8E-4��
Embodiment 2:
The compound encapsulation structure of a kind of organic electroluminescence device, including conducting glass substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, metallic cathode and encapsulated layer. Conducting glass substrate and encapsulated layer form a closing space by epoxy sealing, and hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode are contained in this closing space. Described encapsulated layer includes SiO film that a layer thickness is 150nm successively, a layer thickness is the Si of 150nm3N4Film, (oxidation film is the Al doped with Ca and Mg to one layer of oxidation film 832O3Film, the quality that oxidation film gross mass is 1g, Ca and Mg accounts for the 18% and 10% of oxidation film gross mass respectively, and oxide film thickness is 100nm) and it is loaded with the PET film of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 4.8E-4��
Embodiment 3:
The compound encapsulation structure of a kind of organic electroluminescence device, including conducting glass substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, metallic cathode and encapsulated layer. Conducting glass substrate and encapsulated layer form a closing space by epoxy sealing, and hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode are contained in this closing space. Described encapsulated layer includes SiO film that a layer thickness is 150nm successively, a layer thickness is the AlN film of 150nm, (oxidation film is the Ga of doping Ca for one layer of oxidation film 832O3Film, the quality that oxidation film gross mass is 1.2g, Ca accounts for the 35% of oxidation film gross mass, and oxide film thickness is 100nm) and it is loaded with the PET film of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 2.3E-4��
Embodiment 4:
The compound encapsulation structure of a kind of organic electroluminescence device, including conducting glass substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, metallic cathode and encapsulated layer. Conducting glass substrate and encapsulated layer form a closing space by epoxy sealing, and hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode are contained in this closing space. Described encapsulated layer includes SiO film that a layer thickness is 150nm successively, a layer thickness is the SiN film of 150nm, (oxidation film is the BeO film of doping Ca for one layer of oxidation film 83, oxidation film gross mass is 1.0g, the quality of Ca accounts for the 20% of oxidation film gross mass, and oxide film thickness is 100nm) and it is loaded with the PET film of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 3.5E-4��
Embodiment 5:
The compound encapsulation structure of a kind of organic electroluminescence device, including conducting glass substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, metallic cathode and encapsulated layer. Conducting glass substrate and encapsulated layer form a closing space by epoxy sealing, and hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode are contained in this closing space. Described encapsulated layer includes SiO film that a layer thickness is 150nm successively, a layer thickness is the SiN film of 150nm, (oxidation film is the Al of doping Ba for one layer of oxidation film 832O3Film, the quality that oxidation film gross mass is 0.9g, Ba accounts for the 25% of oxidation film gross mass, and oxide film thickness is 100nm) and it is loaded with the PET film of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 3.9E-4��
Embodiment 6:
The compound encapsulation structure of a kind of organic electroluminescence device, including conducting glass substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, metallic cathode and encapsulated layer. Conducting glass substrate and encapsulated layer form a closing space by epoxy sealing, and hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode are contained in this closing space. Described encapsulated layer includes SiO film, the three layers Si that a layer thickness is 150nm successively3N4Film (Si3N4The thickness in monolayer of film is 100nm), (oxidation film is the Al of doping Sr for one layer of oxidation film 832O3Film, the quality that oxidation film gross mass is 0.8g, Sr accounts for the 22% of oxidation film gross mass, and oxide film thickness is 100nm) and it is loaded with the PET film of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 4.6E-4��
Embodiment 7:
The compound encapsulation structure of a kind of organic electroluminescence device, including conducting glass substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, metallic cathode and encapsulated layer. Conducting glass substrate and encapsulated layer form a closing space by epoxy sealing, and hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode are contained in this closing space. Described encapsulated layer includes SiO film that a layer thickness is 150nm successively, (respectively thickness in monolayer is the SiN film of 100nm, Si to three layers nitride film3N4Film and AlN film), (oxidation film is the Al doped with Mg to one layer of oxidation film 832O3Film, the quality that oxidation film gross mass is 1.1g, Mg accounts for the 27% of oxidation film gross mass, and oxide film thickness is 100nm) and it is loaded with the PET film of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 5.7E-4��
Embodiment 8:
The compound encapsulation structure of a kind of organic electroluminescence device, including conducting glass substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, metallic cathode and encapsulated layer. Conducting glass substrate and encapsulated layer form a closing space by epoxy sealing, and hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode are contained in this closing space. Described encapsulated layer includes SiO film that a layer thickness is 150nm successively, a layer thickness is the SiN film of 150nm, (oxidation film is the Al of doping Ca, Ba, Sr and Mg for one layer of oxidation film 832O3Film, Ca, Ba, Sr and Mg quality account for the 7% of oxidation film gross mass, 10%, 5% and 8% respectively, oxide film thickness is 100nm) and be loaded with the PET film of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 1.4E-4��
Embodiment 9:
The method for packing of a kind of organic electroluminescence device, comprises the following steps:
(1) on anode substrate, functional layer, luminescent layer and metallic cathode are prepared
A. the pre-treatment of conducting glass substrate
Take ito glass substrate, be sequentially carried out liquid detergent cleaning, ethanol purge, acetone cleans and pure water cleans, it is used that ultrasonic washing unit is carried out, washing adopts and cleans 5 minutes every time, stops 5 minutes, the method repeating 3 times respectively, then stand-by by oven for drying again, also need to carry out surface activation process to the ito glass substrate after cleaning, to increase the oxygen content of ito glass substrate surface layer, improve the work function on ito glass substrate surface; ITO thickness 100nm;
B. the preparation of functional layer, luminescent layer and metallic cathode
The method of vacuum evaporation or the method for solution coating is adopted to sequentially form hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer on ito glass substrate; Evaporation is adopted to make aluminum negative electrode;
(2) having the SiO film of one layer of 100nm as protective layer by the mode of vacuum evaporation in metal cathode surface preparation, vacuum degree control is 5 �� 10-5Pa, evaporation rate is
(3) on SiO film surface, utilize Si target by the mode of magnetron sputtering, pass into Ar and N2, N2Proportion is 8%, prepares one layer of Si3N4Film, thickness 100nm, the background vacuum in magnetron sputtering process is 2 �� 10-4Pa;
(4) by the mode of magnetron sputtering at Si3N4Utilizing Al target and Ca target on film surface, magnetron sputtering makes, and passes into gas O2And Ar, O2Content 8%, background vacuum 2 �� 10-4Pa, prepares one layer of Al doped with Ca2O3Film, thickness 100nm, Ca account for the 35% of oxidation film gross mass;
(5) at the Al doped with Ca2O3The preparation of film surface is loaded with the PET film of metallic aluminium;
(6) at SiO film, Si3N4Film, Al doped with Ca2O3Film, the PET film being loaded with metallic aluminium and ito glass substrate edge-coating epoxy resin, (thickness 1 ��m), by the dry hardening epoxy resin of the mode of ultraviolet curing (UV-Curing), then solidify with UV light (��=365nm), light intensity 11mW/cm2, time of exposure 300s, seal and form a closing space, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and aluminum negative electrode are contained in this closing space. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 2.9E-4��
Embodiment 10:Ca accounts for the 27% of oxidation film gross mass, and other is with embodiment 9, water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 4.1E-4��
Embodiment 11:Ca accounts for the 20% of oxidation film gross mass, and other is with embodiment 9, water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 5.2E-4��
Embodiment 12: step (3) repeats 2 times, step (4) repeats 2 times, and other is with embodiment 9, water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 3.1E-4��
Embodiment 13: step (3) repeats 3 times, step (4) repeats 3 times, and other is with embodiment 9, water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 4.2E-4��
Effect example
Beneficial effect for the compound encapsulation structure of valid certificates organic electroluminescence device of the present invention and method for packing thereof, it is provided that relevant experimental data is as follows.
Table 1. embodiment 9��11 compound encapsulation structure life time decay situation
Table 1 is embodiment 9��11 compound encapsulation structure life time decay situation. Fig. 2 is embodiment 9��11 compound encapsulation structure life time decay curve chart.
The starting brightness of the organic electroluminescence device from table 1 and Fig. 2 it can be seen that after composite package of the present invention is 1,000cd/m2Under, the life-span reaches more than 10,000 hours.
The water oxygen permeability (WVTR) of the organic electroluminescence device from above-mentioned experimental data it can be seen that after composite package of the present invention reaches 10-4g/m2��day��
To sum up, the compound encapsulation structure of organic electroluminescence device provided by the invention can efficiently reduce the steam erosion to organic electroluminescence device, significantly increases the life-span of organic electroluminescence device, and metallic cathode can be protected to exempt from destruction.
Claims (10)
1. the compound encapsulation structure of an organic electroluminescence device, including anode substrate, functional layer, luminescent layer, metallic cathode and encapsulated layer, anode substrate and encapsulated layer form a closing space, functional layer, luminescent layer and metallic cathode are contained in this closing space, it is characterized in that, described encapsulated layer includes nitride film, oxidation film successively and is loaded with the high temperature resistance polyester thin film of metallic aluminium, and oxidation film is Al2O3, BeO and Ga2O3In film one or more and doped with the film of one or more formation in metallic element Ca, Ba, Sr and Mg, between metallic cathode and nitride film, be provided with SiO film as protective layer.
2. compound encapsulation structure as claimed in claim 1, it is characterised in that described nitride film is SiN film, Si3N4Film or AlN film.
3. compound encapsulation structure as claimed in claim 1, it is characterised in that the thickness of described SiO film is 100��150nm.
4. compound encapsulation structure as claimed in claim 1, it is characterised in that the quality of described doped metallic elements accounts for the 20��35% of oxidation film gross mass.
5. compound encapsulation structure as claimed in claim 1, it is characterised in that described oxidation film is monolayer, and the thickness of monolayer is 100��150nm.
6. the method for packing of an organic electroluminescence device, it is characterised in that comprise the following steps:
(1) on anode substrate, functional layer, luminescent layer and metallic cathode are prepared;
(2) SiO film is prepared as protective layer by the mode of vacuum evaporation at metal cathode surface;
(3) nitride film is prepared by the mode of magnetron sputtering on SiO film surface;
(4) preparing oxidation film by the mode of magnetron sputtering on nitride film surface, oxidation film is Al2O3, BeO and Ga2O3In film one or more and doped with the film of one or more formation in metallic element Ca, Ba, Sr and Mg;
(5) the high temperature resistance polyester thin film of metallic aluminium it is loaded with in the preparation of nitride film surface;
(6) at SiO film, nitride film, oxidation film, the high temperature resistance polyester thin film being loaded with metallic aluminium and anode substrate edge-coating UV glue, then solidify with UV light, seal and form a closing space, functional layer, luminescent layer and metallic cathode are contained in this closing space.
7. method for packing as claimed in claim 6, it is characterised in that described in step (2), the thickness of SiO film is 100��150nm.
8. method for packing as claimed in claim 6, it is characterised in that nitride film described in step (3) is SiN film, Si3N4Film or AlN film.
9. method for packing as claimed in claim 6, it is characterised in that described in step (4), the quality of doped metallic elements accounts for the 20��35% of oxidation film gross mass.
10. method for packing as claimed in claim 6, it is characterised in that oxidation film described in step (4) is monolayer, and the thickness of monolayer is 100��150nm.
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| CN101080121A (en) * | 2007-07-06 | 2007-11-28 | 清华大学 | An organic EL part and its making method |
| CN101518151A (en) * | 2006-11-06 | 2009-08-26 | 新加坡科技研究局 | Nano particle encapsulated barrier lamination |
| CN102077686A (en) * | 2009-06-29 | 2011-05-25 | 富士电机控股株式会社 | Sealing film for organic EL element, organic EL element, and organic EL display |
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| US7589885B2 (en) * | 2006-09-22 | 2009-09-15 | Angstrom, Inc. | Micromirror array device comprising encapsulated reflective metal layer and method of making the same |
| WO2009134211A1 (en) * | 2008-04-29 | 2009-11-05 | Agency For Science, Technology And Research | Inorganic graded barrier film and methods for their manufacture |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101518151A (en) * | 2006-11-06 | 2009-08-26 | 新加坡科技研究局 | Nano particle encapsulated barrier lamination |
| CN101080121A (en) * | 2007-07-06 | 2007-11-28 | 清华大学 | An organic EL part and its making method |
| CN102077686A (en) * | 2009-06-29 | 2011-05-25 | 富士电机控股株式会社 | Sealing film for organic EL element, organic EL element, and organic EL display |
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