CN103116200A - Adaptor system achieved based on narrow band interference filter and active marker - Google Patents

Abstract

The invention discloses an adaptation system realized based on a narrow-band interference filter and an active marker, including a narrow-band interference filter, an active marker, and a camera device. The narrow-band interference filter is placed in front of the lens of the camera device, and the camera The device is connected with the imaging processing equipment, the distance between the active marker working in the near-infrared band and the lens of the camera device is within the set distance range, and the light beam incident on the narrow-band interference filter is filtered by the narrow-band interference filter and then captured The central wavelength of the passband of the narrow-band interference filter is approximately equal to the peak wavelength of the active marker. The present invention uses a narrow-band interference filter and an active marker to establish a continuous working mode. In the image obtained through the present invention, the image spots of the active marker and the sunlight interference area are clearly separated, which can effectively eliminate sunlight and other noises. The interference caused by astigmatism can complete the functions of active marker identification, relative pose parameter measurement, and homing tracking.

Description

Adaption system based on spike interference filter and the realization of active flag device

Technical field

The present invention relates to a kind of adaption system based on spike interference filter and the realization of active flag device, be used for realizing landmark identification, pose parameter measurement and Homing tracking function for the active flag device.

Background technology

at present, photoelectric sensor at home and abroad, in photoelectric communication and pose measurement thereof and tracker, its cooperative target generally all adopts passive retro-reflector, for example, the U.S. has carried out repeatedly flying demonstration and has verified the video navigation sensor (VGS) in (DART) and improve model AVGS and vision guided navigation sensor (VNS) etc., the TRAJECTORY CONTROL sensor (TCS) of the U.S. that is using in addition, Japan near sensor (PXS) and European video instrument (VMD) etc., what they adopted is all that target is made in the combination that passive retro-reflector consists of.The mode of operation of this cooperative target is mostly to shine successively reverberator on target aircraft in the laser beam of using two kinds of different wave lengths on tracking aircraft, and reverberator only reflects the laser beam of one of them wavelength and absorb the laser beam of another wavelength, to the imaging of twice folded light beam combined and alternatively, one-tenth's image is carried out the phase reducing, thereby suppress sunlight and other interference of stray light, extract the image patch of reverberator, and then based on the identification of the image patch complement mark of one group of reverberator, relative pose parameter measurement and Homing tracking.

Obviously, there are two problems in above-mentioned use reverberator on mode of operation:

The one, the laser beam of different wave length is within the time period of twice adjacent irradiation reverberator, and sunlight and other interference of stray light background near reverberator can not have significant change, if having significant change, can not reach the requirement of eliminating sunlight and other interference of stray light.In above-mentioned application, frame speed maximum only has 5Hz, and interFrameGap is greater than 200ms, although the very high (VGS:450W of Ear Mucosa Treated by He Ne Laser Irradiation power, AVGS:150W), but its radiation intensity still is difficult to compare with sunlit intensity, can not ensure the requirement of satisfying above-mentioned elimination interference of stray light.

The 2nd, compare with active flag device imaging spot, reverberator imaging spot is second-rate, is difficult to guarantee homogeneity and symmetric requirement, can not guarantee higher measuring accuracy, in the situation that residual interference is serious, even produces gross error.

Summary of the invention

The object of the present invention is to provide a kind of adaption system based on spike interference filter and the realization of active flag device, this adaption system can be eliminated the interference that sunlight and other parasitic light bring effectively, completes the functions such as the landmark identification of active flag device and relative pose parameter measurement, Homing tracking.

To achieve these goals, the present invention has adopted following technical scheme:

a kind of adaption system based on spike interference filter and the realization of active flag device, it is characterized in that: it comprises spike interference filter, the active flag device, camera head, before this spike interference filter is placed in the camera lens of this camera head, this camera head and imaging processing equipment connection, being operated in this active flag device of near-infrared band and the camera lens distance apart of this camera head is in set distance range, the light beam of this spike interference filter of incident is gathered by this camera head after filtering via this spike interference filter, wherein: the passband centre wavelength of this spike interference filter is approximately equal to the peak wavelength of this active flag device.

Described spike interference filter comprises the substrate of being made by silica glass material, is coated with respectively the main peak film and is, cuts the secondary peak film to be that wherein: this main peak film is that four half-wave films are on the upper and lower surface of this substrate; This section secondary peak film is to cut the secondary peak membrane stack.

Described main peak film is silica coating, the niobium pentaoxide rete is alternately laminated forms, described main peak film is to be made of at least 48 tunic layers, the ratio of the bed thickness of every layer of this silica coating and described spike interference filter 1/4th passband centre wavelengths is between 0.5 to 1.5, and the ratio of the bed thickness of every layer of this niobium pentaoxide rete and described spike interference filter 1/4th passband centre wavelengths is between 0.5 to 3.0;

Described section secondary peak film is silica coating, the niobium pentaoxide rete is alternately laminated forms, described section secondary peak film is to be made of at least 118 tunic layers, the ratio of the bed thickness of every layer of this silica coating and described spike interference filter 1/4th passband centre wavelengths is between 0.2 to 2.0, and the ratio of the bed thickness of every layer of this niobium pentaoxide rete and described spike interference filter 1/4th passband centre wavelengths is between 0.1 to 2.0.

Coating black matt paint on the surrounding sidewall of described spike interference filter.

Described active flag device is conical near infrared light towards described spike interference filter radiation, and described active flag device is at least three near field active flag devices and/or at least three far field active flag devices.

When the temperature effect factor of the oblique incidence drift of considering described spike interference filter and described active flag device affects, in the situation that the luminescent device of described active flag device is in room temperature and makes the workplace of beam collimation incident spike interference filter, according to following formula, the passband centre wavelength of described spike interference filter is carried out the oblique incidence compensation

${\mathrm{\&lambda;}}_{00}=\frac{2{\mathrm{\&lambda;}}_{\mathrm{<figure-callout\; id="0"\; label="p"\; filenames="HDA00002821045800021.png,HDA00002821045800022.png"\; state="\{\{state\}\}">p</figure-callout>}0}+T_{{\mathrm{K\&lambda;}}_P}\&times;(T_{\max }+T_{\min }-2T_0)}{1+\sqrt{1-{\left(\frac{{\mathrm{<figure-callout\; id="0"\; label="n"\; filenames="HDA00002821045800021.png,HDA00002821045800022.png"\; state="\{\{state\}\}">n</figure-callout>}}_0\sin {\mathrm{\&theta;}}_{\max }}{e}\right)}^2}}$

In following formula, T _maxBe upper temperature limit, T _minBe lowest temperature, T ₀Be room temperature, n ₀Be the refractive index of the substrate of described spike interference filter, e is the parameter relevant with film system to the film material of described spike interference filter, n _HE〉n _L, n _HBe described main peak film system, the refractive index of cutting the niobium pentaoxide rete in secondary peak film system, n _LBe described main peak film system, the refractive index of cutting the silica coating in secondary peak film system, θ _maxBe the maximum oblique firing angle of the light beam of the workplace of the described spike interference filter of oblique incidence, T _{K λ p}Be the temperature coefficient of the luminescent device of described active flag device, λ ₀₀The passband centre wavelength of described spike interference filter during for the workplace of the described spike interference filter of beam collimation incident, λ _p0Peak wavelength for described active flag device when the room temperature.

Advantage of the present invention is:

based on the interdiction countermeasure that obtains by the effect of sunlight analysis, the present invention utilizes spike interference filter and active flag device to set up a kind of continuous operation mode, in this pattern, the passband that spike interference filter has the narrow passband that approaches rectangle and a spike interference filter adapts to the spectral characteristic of this active flag device, the passband transmitance is high, only band covers the spectrum sensitive wavelength band of this camera head and ends dark, and the active flag device with less radiation power (for example, far field active flag device: 390 ~ 460mW, near field active flag device: 30 ~ 40mW), larger reach (for example, far field active flag device:〉(150m, ± 24 °), near field active flag device:〉(30m, ± 24 °)) be operated in near-infrared band.as long as the camera lens distance apart of this active flag device and this camera head is in set distance range, the light beam of this spike interference filter of incident is gathered by this camera head after filtering via this spike interference filter, imaging data rate of the present invention just is not subjected to the initiatively constraint of marker working method, working environment does not receive the constraint without sunlight, the image quality that obtains via the present invention is good, unimodal, evenly, symmetrical, and signal to noise ratio is very high, and in the image that obtains via the present invention, the image patch of active flag device is separated by clear with the sunlight interference region, can effectively eliminate the interference that sunlight and other parasitic light bring, complete landmark identification and the relative pose parameter measurement of active flag device, the functions such as Homing tracking, and detection range of the present invention is far away, scope is large, precision is high, can be widely used in photoelectric sensor, in the photoelectric communication system.Need to prove, for the accurate identification of while complement mark, accurate measurement and the Homing tracking of relative pose parameter, the active flag device should be at least three near field active flag devices and/or at least three far field active flag devices, to the active flag device that uses, should make every effort to set up the stereoscopic arrangement of intrinsic some invariant features, when only using three near field active flag devices or three far field active flag devices, should not arrange point-blank, the quantity of near, far field active flag device and concrete distribution form depending on measuring accuracy require and the application layout environment.

Description of drawings

Fig. 1 is the composition schematic diagram of adaption system of the present invention;

Fig. 2 is the composition schematic diagram of spike interference filter;

Fig. 3 is the optical transmittance performance diagram that the main peak film of spike interference filter the first embodiment is;

Fig. 4 is the optical transmittance performance diagram that cuts secondary peak film system of spike interference filter the first embodiment;

Fig. 5 is the optical transmittance performance diagram of spike interference filter the first embodiment;

Fig. 6 is the radiation spectrum curve synoptic diagram of active flag device;

When Fig. 7 is the light beam oblique incidence, spike interference filter passband centre wavelength is to the curve map of weakness drift;

The passband transmittance curve figure of spike interference filter when the spectral curve of active flag device and beam collimation, oblique incidence when Fig. 8 is upper temperature limit;

The passband transmittance curve figure of spike interference filter when the spectral curve of active flag device and beam collimation, oblique incidence when Fig. 9 is lowest temperature;

Figure 10 is sunbeam during with 3.6 ° of oblique incidence spike interference filters, the image that obtains after the imaging processing device processes;

Figure 11 is the oblique firing angle of sunbeam incident spike interference filter during greater than the field angle of camera head, the image that obtains after the imaging processing device processes.

Embodiment

as Fig. 1, the adaption system that the present invention is based on the realization of spike interference filter and active flag device comprises spike interference filter 200, active flag device 100, camera head 300, before this spike interference filter 200 is placed in the camera lens of this camera head 300, this camera head 300 is connected with imaging processing equipment 400, being operated in this active flag device 100 of near-infrared band and the camera lens distance apart of this camera head 300 is in set distance range, the light beam of this spike interference filter 200 of incident (light beam that refers to the stray light emissions such as the near infrared light light beam of active flag device 100 radiation and sunlight) is gathered by this camera head 300 after filtering via this spike interference filter 200, wherein: the passband centre wavelength of this spike interference filter 200 and the peak wavelength of this active flag device 100 are suitable, namely the passband centre wavelength of this spike interference filter 200 is approximately equal to the peak wavelength of this active flag device 100.

Based on above-mentioned this adapt mode, the present invention can realize eliminating sunlight and other parasitic light interference problem that 100 identifications bring to the active flag device, can accurately identify active flag device 100.

In the present invention, as Fig. 2, spike interference filter 200 comprises the substrate 210 of being made by quartz glass (JGS1) material, being coated with respectively the main peak film and being 220 on the upper and lower surface of this substrate 210, cutting a secondary peak film is 230, wherein: this main peak film is 220 to be four half-wave films systems, this four half-waves film is the film system that refers to adopt four resonator cavitys series connection, can improve the squareness factor of spike interference filter and only be with the cut-off degree of depth; This section secondary peak film is 230 for cutting a secondary peak membrane stack, the periodic structure that this section secondary peak membrane stack refers to end film system forms.

This main peak film be 220 for the silica coating of low-refraction (by SiO ₂Material is made), the niobium pentaoxide rete of high index of refraction is (by Nb ₂O ₅Material is made) alternately laminated forming, the main peak film is 220 to be made of at least 48 tunic layers, and be in 220 at the main peak film, the rete nearest apart from substrate 210 is silica coating or niobium pentaoxide rete, be silica coating or niobium pentaoxide rete apart from substrate 210 rete farthest, the bed thickness of every layer of this silica coating and spike interference filter 1/4th passband centre wavelength (λ ₀/ 4) ratio is between 0.5 to 1.5, and for example ratio is desirable 0.5,1.0,1.5, the bed thickness of every layer of this niobium pentaoxide rete and spike interference filter 1/4th passband centre wavelength (λ ₀/ 4) ratio is between 0.5 to 3.0, and for example ratio desirable 0.5,2.0,3.0.In actual design, the main peak film is that the bed thickness of each layer silica coating of 220 can be different, the bed thickness of each layer niobium pentaoxide rete can be different, can be that the bed thickness of each layer silica coating of 220 and the bed thickness of each layer niobium pentaoxide rete carry out thickness optimization further to the main peak film by respective algorithms, with passband ripple cancellation better, make squareness factor less than or equal to 1.5.

This section secondary peak film is 230 alternately laminated the forming of niobium pentaoxide rete for the silica coating of low-refraction, high index of refraction, cutting the secondary peak film and be 230 is made of at least 118 tunic layers, and be in 230 cutting the secondary peak film, the rete nearest apart from substrate 210 is silica coating or niobium pentaoxide rete, be silica coating or niobium pentaoxide rete apart from substrate 210 rete farthest, the bed thickness of every layer of this silica coating and spike interference filter 1/4th passband centre wavelength (λ ₀/ 4) ratio is between 0.2 to 2.0, and for example ratio is desirable 0.2,1.0,2.0, the bed thickness of every layer of this niobium pentaoxide rete and spike interference filter 1/4th passband centre wavelength (λ ₀/ 4) ratio is between 0.1 to 2.0, and for example ratio desirable 0.1,1.0,2.0.In actual design, the bed thickness that cuts the secondary peak film and be each layer silica coating of 230 can be different, the bed thickness of each layer niobium pentaoxide rete can be different, can carry out thickness optimization further to cutting bed thickness that the secondary peak film be each layer silica coating of 230 and the bed thickness of each layer niobium pentaoxide rete by respective algorithms, to eliminate transmission area and cut-off region high-transmission rate spike, make and only be with the cut-off degree of depth below 0.01%, the transmitance of transmission area is greater than 95%.

And in practice, the passband central wavelength lambda of spike interference filter 200 ₀Generally in 780nm ~ 1100nm scope.

Spike interference filter in the present invention has been selected Nb ₂O ₅Although material is TiO ₂The refractive index ratio Nb of material ₂O ₅Higher, still, TiO ₂The chemical stability of material is relatively poor, and under strong radiation parameter, its refractive index can change, and can not be directly used in space flight etc. in the high space environment of stability requirement, thereby adopt Nb ₂O ₅Material.And Nb ₂O ₅With SiO ₂The refringence of this bi-material is large, and their chemical stability and irradiation stability all fine, so selected the alternately laminated structural design of this bi-material.And the angular effect of this alternately laminated structural design can effectively reduce oblique incidence the time guarantees wavelength location, squareness factor and transmitance.

In actual design, the not restriction of thickness to substrate 210 is generally a millimeter magnitude, as in 0.3mm ~ 5mm scope, should determine according to the practical application condition.The upper and lower surface of substrate 210 is 220, cuts a secondary peak film to be before 230 being coated with respectively the main peak film, and substrate 210 should carry out polishing.

In actual design, the main peak film is 220, cut the secondary peak film is that (this technique is known technology for 230 the preferred employing ion gun coating process that is coated with, but the parameter in technique is summed up by great many of experiments and is obtained, need the cost performing creative labour), thereby guarantee the absorbability of niobium pentaoxide rete and the density of silica coating, stress after guarantee silica coating and niobium pentaoxide rete are alternately laminated, realize spike interference filter 200 passband centre wavelengths without drift, long-term high stability and high reliability.In the ion gun coating process, the baking temperature of use is 200 ℃ ~ 300 ℃, and ionogenic parameter is: anode voltage 220 ~ 270V, anode current 5 ~ 8A is so that the drift of the passband centre wavelength of spike interference filter 200 can be reduced to below 1nm.By the revision board adjustment to silica coating and niobium pentaoxide rete, can make the homogeneity of passband centre wavelength in 1nm.In addition, between silica coating, niobium pentaoxide rete, the preferred ion assisted deposition technology (known technology) that adopts realizes combination, and the ion assisted deposition technology can improve the adhesion between rete greatly, and the firmness of rete is improved greatly.

In order to prevent the scattering of spectrum, should apply black matt paint (for example adopting S956 delustring paint) 240 on the surrounding sidewall (non-working surface) of spike interference filter 200, this delustring paint 240 is by epoxide-resin glue (for example adopting epoxide-resin glue E51(618)) bonding with the surrounding sidewall of spike interference filter 200.When delustring paint 240 be coated be covered with after, carry out the curing of 60 minutes at the temperature of 120 ℃, to solve delustring paint 240 problems not strong with substrate 210 adhesions.In addition, the surrounding sidewall that can guarantee spike interference filter 200 does not have parasitic light and enters, and improves the filter effect of optical filter.

To sum up, confirm by great many of experiments that the good in optical property of spike interference filter 200 has the high (T of passband transmitance _ou〉=95%), only the band cut-off is dark (stops band cut-off degree of depth J _sLess than 0.01%), passband approaches rectangle (passband squareness factor μ _ju≤ 1.5), little (the passband central wavelength lambda of oblique incidence drift ₀Drift be not more than 12nm) etc. advantage, and stability high, reliability is high.

Spike interference filter is given an example:

Spike interference filter the first embodiment is by substrate and be coated on the upper and lower lip-deep main peak film of this substrate system, cut secondary peak film system consists of, wherein:

For main peak film system, from the nearest rete of distance substrate, each rete of main peak film system is:

0.947L; 0.801H; 0.967L; 0.974H; 0.976L; 2.004H; 1.016L; 1.065H; 1.092L; 1.081H; 1.023L; 0.849H; 0.828L; 0.783H; 0.933L; 0.944H; 1.011L; 2.081H; 1.019L; 1.012H; 0.999L; 0.984H; 1.028L; 1.096H; 1.068L; 1.009H; 1.019L; 0.994H; 1.003L; 1.999H; 1.005L; 1.014H; 1.009L; 0.974H; 0.925L; 0.673H; 1.049L; 1.072H; 1.048L; 0.994H; 0.991L; 1.943H; 0.998L; 1.047H; 1.043L; 1.154H; 1.205L; 0.86H; 1.074L, wherein:

L represents silica coating, H represents the niobium pentaoxide rete, numeral before H refers to the bed thickness of this rete and the ratio of spike interference filter 1/4th passband centre wavelengths, equally, numeral before L refers to the bed thickness of this rete and the ratio of spike interference filter 1/4th passband centre wavelengths, for example, 0.947L represents that this rete is silica coating, and the bed thickness of this rete is λ ₀/ 4 multiply by 0.947, λ ₀The passband centre wavelength that will obtain for spike interference filter.

By above-mentioned structural design, the passband transmitance of main peak film system can reach more than 95%, and the passband squareness factor is less than 1.5, when ± 12 ° of oblique incidences, and the passband central wavelength lambda ₀Drift less than 7nm, the optical transmittance characteristic of main peak film system is as shown in Figure 3.

For cutting secondary peak film system, from the nearest rete of distance substrate, each rete that cuts secondary peak film system is:

1.027L; 0.481H; 1.671L; 0.190H; 1.576L; 0.617H; 1.156L; 1.246H; 0.838L; 1.042H; 0.777L; 1.186H; 1.033L; 0.948H; 0.945L; 1.257H; 1.152L; 0.81H; 0.678L; 1.195H; 1.470L; 1.086H; 0.663L; 1.235H; 0.841L; 1.011H; 1.035L; 1.038H; 1.033L; 0.916H; 0.919L; 1.083H; 0.897L; 1.074H; 0.749L; 1.188H; 0.779L; 1.001H; 0.655L; 0.798H; 0.794L; 0.690H; 0.783L; 0.956H; 0.828L; 1.034H; 0.836L; 0.712H; 0.833L; 0.855H; 0.668L; 0.752H; 0.939L; 0.810H; 0.829L; 0.723H; 0.688L; 0.749H; 0.804L; 0.794H; 0.886L; 0.717H; 0.619L; 0.534H; 0.685L; 0.774H; 0.806L; 0.968H; 0.595L; 0.525H; 0.612L; 0.578H; 0.588L; 0.583H; 0.643L; 0.610H; 0.614L; 0.402H; 0.437L; 0.588H; 0.667L; 0.551H; 0.536L; 0.561H; 0.593L; 0.536H; 0.581L; 0.717H; 0.775L; 0.575H; 0.526L; 0.593H; 0.790L; 0.735H; 0.616L; 0.833H; 0.508L; 0.520H; 0.613L; 0.547H; 0.555L; 0.729H; 0.642L; 0.507H; 0.372L; 0.437H; 0.445L; 0.305H; 0.570L; 0.595H; 0.357L; 0.264H; 0.476L; 0.43H; 0.578L; 0.525H; 0.491L; 0.460H; 1.088L, wherein:

L represents silica coating, H represents the niobium pentaoxide rete, numeral before H refers to the bed thickness of this rete and the ratio of spike interference filter 1/4th passband centre wavelengths, equally, numeral before L refers to the bed thickness of this rete and the ratio of spike interference filter 1/4th passband centre wavelengths, for example, 0.481H represents that this rete is the niobium pentaoxide rete, and the bed thickness of this rete is λ ₀/ 4 multiply by 0.481, λ ₀The passband centre wavelength that will obtain for spike interference filter.

By above-mentioned structural design, the passband transmitance that section secondary peak film is can reach more than 95%, only band cut-off degree of depth J _sLess than 0.01%, only the region is within 200nm ~ 850nm, and the optical transmittance family curve that section secondary peak film is as shown in Figure 4.

And by the above-mentioned design that the main peak film is and cuts secondary peak film system, the optical transmittance family curve of spike interference filter the first embodiment is (the passband transmitance λ of spike interference filter in Fig. 5 as shown in Figure 5 ₀=943nm), obtain following key property:

1, passband transmitance T _ou(being passband centre wavelength transmittance) height, reality can reach T _ou〉=92%.Should improve T in practice as far as possible _ou, in order to reduce the loss of receiving beam energy, improve the reception signal to noise ratio.

2, passband width Δ λ _0.5(be 50%T _ouBandwidth) be 23nm ~ 28nm.Theoretical analysis and the experimental result of anti-effect of sunlight show, receive signal to noise ratio in order to be conducive to improve, and consider to realize simultaneously possibility, the Δ λ of spike interference filter _0.5Should be narrow as far as possible, require Δ λ _0.5Should near 20nm, can adjust according to application requirements.

3, passband squareness factor μ _juBe 1.3 ~ 1.5.The squareness factor μ of passband _juBe defined as Δ λ _0.1With Δ λ _0.9Ratio, Δ λ _0.9Be 90%T _ouBandwidth, Δ λ _0.1Be 10%T _ouBandwidth is in order to be conducive to improve reception signal to noise ratio, Δ λ _0.9Should be as far as possible wide, Δ λ _0.1Should be as far as possible narrow.Obviously, μ _ju＞1.0, μ _juMore near 1, passband is more near rectangle, and effect is just better.

4, only be with spectral coverage: requiring cut-off width greater than receiving equipment response wave band scope, for example, if when using a kind of ccd video camera, is 200nm ~ 1100nm, wherein except passband.

5, only band ends degree of depth J _sLess than 0.06%.Only band ends degree of depth J _sDirectly impact is to the inhibition degree of sunlight and other parasitic light, end deeplyer, disturbs and suppresses cleaner, so should reduce the only band cut-off degree of depth as far as possible, in order to suppress well to disturb, is conducive to improve the reception signal to noise ratio.

6, when light beam oblique incidence (changing in 0 ° ~ 16 ° as oblique firing angle), the passband central wavelength lambda ₀Drift be not more than 8nm ~ 12nm.In order to be conducive to keep the best-fit with incident light spectrum, passband central wavelength lambda in the time of should reducing oblique incidence as far as possible ₀Drift.

7, precision is high, good uniformity, and stability is strong.The passband central wavelength lambda ₀With passband width Δ λ _0.5Precision be ± 1nm effectively to see through in the plane domain scope passband centre wavelength deviation of each point | Δ λ ₀|≤1nm, passband transmitance deviation | Δ T _ou|≤3%, experiment shows, in 6 months, passband centre wavelength deviation | Δ λ ₀|≤1nm, passband transmitance deviation | Δ T _ou|≤3%, good stability.

In the present invention, active flag device 100 is conical near infrared light towards spike interference filter 200 radiation, active flag device 100 can be selected near field active flag device or far field active flag device, wherein: it is disclosed cooperative target marker in 200810102001.1 Chinese invention patent " cooperative target marker " that this near field active flag device can be selected the patent No., and the camera lens distance apart of this near field active flag device and camera head 300 is≤50 meters; It is disclosed Far-field target marker in 200920244346.0 Chinese utility model patent " Far-field target marker " that this far field active flag device can be selected the patent No., and the camera lens distance apart of this far field active flag device and camera head 300 is≤200 meters.

need to prove, accurate identification for the while complement mark, accurate measurement and the Homing tracking of relative pose parameter, should set up a kind of stereoscopic arrangement by at least three near field active flag devices and/or at least three far field active flag devices, to the active flag device that uses, should make every effort to set up the stereoscopic arrangement of intrinsic some invariant features, when only using three near field active flag devices or three far field active flag devices, should not arrange point-blank, closely, the quantity of far field active flag device and concrete distribution form depending on measuring accuracy require and the application layout environment.

The radiation spectrum curve of above-mentioned near, far field active flag device as shown in Figure 6, its spectrum is at peak wavelength λ _p1Near the variation gently, relative spectral intensity is all near 100%, and radiation beam is unimodal, even, symmetrical, and effectively concentrating most energy in coning angle.As seen, above-mentioned near, image patch quality far field active flag device imaging is good, is conducive to accurately determining of barycenter, the precision that can improve identification and measure.And adaption system of the present invention needs to have near, the far field active flag device of this radiation characteristic just.

In the present invention, in the multiple different environment such as that active flag device 100 can be operated in is indoor, outdoor, daytime or night, the active flag device is the luminous energy of the certain wave band of radiation on one's own initiative, only need the one way light path, compare with the passive marker of the double light path of needs, the loss of active flag device is little, operating distance is far away, scope is large, power load is lighter.

But, the radiation power of active flag device 100 is limited, can't compare with solar radiation intensity, therefore, for the present invention can be worked in the background with interference of stray light such as sunlight, must make the present invention can not be operated in the visible light wave range of sunlight strong spectral, depart from visible light wave range far away, more be conducive to eliminate the interference of sunlight and other parasitic light, therefore, in the situation that use ccd video camera, the present invention selects the near infrared service band, even active flag device 100 radiation near infrared lights.

Need to prove, the optical characteristics of spike interference filter 200 by make its main peak film system, cut the material that uses when the secondary peak film is, the factors such as the number of plies, each rete bed thickness determine, and the peak wavelength of active flag device 100 is determined by the factors such as radiance of making the luminescent device that uses at that time.In the present invention, making corresponding active flag device according to the requirement of peak wavelength is known technology.

experiment shows, above-mentioned spike interference filter 200 and active flag device 100 can satisfy the requirement of adaption system that the present invention builds well, but in order to solve the problem of eliminating sunlight and other interference of stray light, in order to be applied to have active flag device 100 in the background of the interference of stray light such as sunlight, based on above-mentioned spike interference filter 200, the design of active flag device 100, the present invention has carried out following design to the adaptive problem of 100 of spike interference filter 200 and active flag devices: in view of spike interference filter 200 passbands very narrow, and active flag device 100 radiation spectrum offset peak wavelength are when gradually far away, its intensity descends gradually, for the present invention is worked, must solve the adaptive problem of both spectral characteristics.Therefore, in the present invention, make the peak wavelength of the passband centre wavelength of this spike interference filter 200 and this active flag device 100 suitable, i.e. the passband central wavelength lambda of this spike interference filter 200 ₀Be approximately equal to the peak wavelength λ of this active flag device 100 _p

And under the ideal conditions of not considering such environmental effects, make the passband central wavelength lambda of spike interference filter 200 ₀Equal the peak wavelength λ of active flag device 100 _pCan realize eliminating the interference problem that sunlight and other parasitic light bring the active flag device, can accurately identify the active flag device.

Generalized case, above-mentioned passband central wavelength lambda ₀The passband centre wavelength of spike interference filter 200 when referring to the workplace of light beam (light beams of all incident spike interference filters) collimation incident spike interference filter 200, above-mentioned peak wavelength λ _pThe peak wavelength of active flag device 100 when referring to room temperature.

But, there is following state in actual the use:

The first, the passband of spike interference filter 200 drifts about to weakness when the light beam oblique incidence, and oblique firing angle is larger, drifts about larger;

The second, the passband centre wavelength of spike interference filter 200 and the peak wavelength of active flag device 100 all have temperature effect.

Therefore, it is very difficult making spike interference filter 200 and active flag device 100 keep mutually adaptive in the environmental baseline of the variations such as strong sunlight, temperature and relative pose relation.

In actual design, the present invention has considered above-mentioned oblique incidence drift and two main situations of temperature effect.

Drift about about oblique incidence:

For above-mentioned spike interference filter 200, be under the condition of parallel beam, to make λ at light beam _θExpression light beam (light beam that refers to the stray light emissions such as the near infrared light light beam of active flag device 100 radiation and the sunlight) workplace of oblique incidence spike interference filter 200, oblique firing angle are that (oblique firing angle θ is the angle of the workplace normal of light beam and spike interference filter 200 to θ, 0＜θ＜90 °) the passband centre wavelength of spike interference filter 200 time, λ ₀₀The passband centre wavelength of spike interference filter 200, λ during the workplace of expression light beam (light beam that refers to the stray light emissions such as the near infrared light light beam of active flag device 100 radiation and sunlight) collimation incident spike interference filter 200 (θ=0 °) _θWith λ ₀₀Between should satisfy following formula 1):

${\mathrm{\&lambda;}}_{\mathrm{\&theta;}}={\mathrm{\&lambda;}}_{00}{(1-({\mathrm{<figure-callout\; id="0"\; label="n"\; filenames="HDA00002821045800021.png,HDA00002821045800022.png"\; state="\{\{state\}\}">n</figure-callout>}}_0^2/e^2){\mathrm{<figure-callout\; id="2"\; label="sin"\; filenames="HDA00002821045800041.png"\; state="\{\{state\}\}">sin</figure-callout>}}^2\mathrm{\&theta;})}^{1/2}---1)$

Formula 1) in, n ₀Be the refractive index of substrate, e is the parameter relevant with film system to the film material of spike interference filter, n _HE〉n _L, n _HBe the refractive index of niobium pentaoxide rete, n _LRefractive index for silica coating.

For example: use quartz glass to make substrate, n ₀=1.45, make e get respectively 2.40,2.45,2.50, under different oblique firing angle θ, the passband centre wavelength of spike interference filter to weakness drift result as shown in Figure 7, horizontal ordinate in Fig. 7 is oblique firing angle θ, and ordinate is that the passband centre wavelength of spike interference filter is to the drift value (nm of unit) of weakness.As can be seen from Fig. 7, when the maximum oblique firing angle θ of incident beam=14 °, the passband centre wavelength of spike interference filter is the 10nm left and right to the weakness drift.

About temperature effect:

The passband centre wavelength of spike interference filter 200 and the peak wavelength of active flag device 100 all have positive temperature coefficient, and both have complementation to adaptive impact.But the temperature coefficient of spike interference filter 200 is very little, can ignore, and the temperature coefficient of active flag device 100 is larger, can not ignore.So when considering adaptive problem, the present invention only considers the temperature effect problem of active flag device peak wavelength.

The temperature effect of the peak wavelength of active flag device depends on the temperature coefficient T of its luminescent device _{K λ p}Make the peak wavelength of active flag device at room temperature T ₀Be λ when (being generally 25 degrees centigrade) _p0, be λ when temperature T _pT, have following formula 2)

${\mathrm{\&lambda;}}_{\mathrm{pT}}={\mathrm{\&lambda;}}_{\mathrm{<figure-callout\; id="0"\; label="p"\; filenames="HDA00002821045800021.png,HDA00002821045800022.png"\; state="\{\{state\}\}">p</figure-callout>}0}+T_{{\mathrm{K\&lambda;}}_P}\&times;(T-T_0)---2)$

Spike interference filter 200 and active flag device 100 adaptive is exactly to make the peak wavelength of the passband centre wavelength of spike interference filter and active flag device approaching as far as possible, more approaching in the course of the work, adaptive better.

Under high-temperature condition, along with environment temperature T raises, due to temperature effect, the peak wavelength of active flag device drifts about to strong point, at upper temperature limit T _maxThe time, the peak wavelength that makes the active flag device is λ _PTmax, and spike interference filter is when oblique firing angle θ becomes large, its passband centre wavelength is drifted about to weakness, at the oblique firing angle θ of maximum _maxThe time, the passband centre wavelength that makes spike interference filter is λ _{θ max}That is to say, under high-temperature condition, side-play amount λ _PTmax-λ _{θ max}Maximum.

Under low temperature condition, along with environment temperature T reduces, due to temperature effect, the peak wavelength of active flag device drifts about to weakness, at lowest temperature T _minThe time, the peak wavelength that makes the active flag device is λ _PTmin, and spike interference filter is when collimation incident (θ=0 °), its passband central wavelength lambda ₀₀With λ _PTminDepart from maximum.That is to say, under low temperature condition, side-play amount λ ₀₀-λ _PTminMaximum.

Therefore, make approaching the equating of two maximum offsets in two kinds of situations of high temperature and low temperature, thereby obtain best-fit, even

λ _pTmax-λ _θmax≈λ ₀₀-λ _pTmin 3）

According to formula 1) ~ 3) the passband central wavelength lambda of spike interference filter obtained ₀₀Peak wavelength λ with active flag device in the room temperature situation _p0Between the pass be following formula 4):

${\mathrm{\&lambda;}}_{00}=\frac{2{\mathrm{\&lambda;}}_{\mathrm{<figure-callout\; id="0"\; label="p"\; filenames="HDA00002821045800021.png,HDA00002821045800022.png"\; state="\{\{state\}\}">p</figure-callout>}0}+T_{{\mathrm{K\&lambda;}}_P}\&times;(T_{\max }+T_{\min }-2T_0)}{1+\sqrt{1-{\left(\frac{{\mathrm{<figure-callout\; id="0"\; label="n"\; filenames="HDA00002821045800021.png,HDA00002821045800022.png"\; state="\{\{state\}\}">n</figure-callout>}}_0\sin {\mathrm{\&theta;}}_{\max }}{e}\right)}^2}}---4)$

That is to say, according to following formula 4) the passband central wavelength lambda of spike interference filter in the time of can obtaining the workplace (θ=0 °) of light beam (light beam that refers to the stray light emissions such as the near infrared light light beam of active flag device radiation and sunlight) collimation incident spike interference filter ₀₀The peak wavelength λ of active flag device during with room temperature _p0Between relation.In other words, in adapting operation, when considering that oblique incidence drift (referring to the oblique incidence drift of spike interference filter) and temperature effect (temperature effect that refers to the active flag device) are when factor affects, in the situation that be in the workplace (θ=0 °) of room temperature and light beam (light beam that refers to the stray light emissions such as the near infrared light light beam of active flag device radiation and sunlight) collimation incident spike interference filter, should be according to following formula 4) the passband centre wavelength of spike interference filter is carried out the oblique incidence compensation.In practice, according to formula 4) active flag device and spike interference filter are carried out corresponding adapting operation, can guarantee that in the situation that changes in environmental conditions, both can keep suitable optimum Working.

For the ease of understanding, illustrate above-mentioned formula 4) use.

Suppose the temperature coefficient T of active flag device luminescent device used _{K λ p}=0.17nm/K, the temperature range of its local space environment of living in is-10 ℃ ~ 40 ℃, setting room temperature is 25 ℃, gets n ₀=1.45, e is 2.50.According to formula 2), on high temperature, in limited time, temperature raises 15 ℃, and the peak wavelength of active flag device increases 2.55nm.And during low temperature limits, temperature reduces by 35 ℃, and the peak wavelength of active flag device reduces 5.95nm, namely obtains as shown in the formula 5)-6):

λ _pTmax=λ _p0+2.55 5）

λ _pTmin=λ _p0-5.95 6）

At the oblique firing angle θ of maximum _maxIn the situation of=14 °, according to formula 4), obtain following formula 7):

λ ₀₀≈λ _p0+3.3 7）

That is to say, in adapting operation, when the temperature effect factor of the oblique incidence drift of considering spike interference filter and active flag device affects, under room temperature and spike interference filter collimation condition of incidence, the passband centre wavelength of reply spike interference filter is carried out the oblique incidence compensation, and compensation rate is+3.3nm.Experiment shows, utilizes formula 7) carry out adapting operation and can obtain optimum efficiency.

It should be noted that in practice, the oblique firing angle of setting the workplace be incident to spike interference filter between 0 ° to maximum oblique firing angle θ _max

If the adaption system of setting up according to the present invention is the peak wavelength λ of active flag device during room temperature _p0=941nm, the temperature coefficient T of its luminescent device used _{K λ p}=0.17nm/K, the temperature range of its local space environment of living in is-10 ℃ ~ 40 ℃, the maximum oblique firing angle θ of light beam incident spike interference filter workplace _max=14 °.So, in order to obtain best-fit, according to formula 7), obtain λ ₀₀=944.3nm.

As Fig. 8 and Fig. 9, Fig. 8, Fig. 9 have provided respectively the spectral curve of active flag device internal illumination device local space environment active flag device in ℃ of two kinds situations of 40 ℃ of upper temperature limits, lowest temperature-10, simultaneously, also provided respectively adaptive spike interference filter in Fig. 8, Fig. 9 in the passband position of beam collimation incident (θ=0 °) and maximum oblique firing angle θ=14 ° of two kinds of extreme cases.In Fig. 8, Fig. 9, block curve is the curve of spectrum of active flag device, dashed curve is the passband transmittance curve of spike interference filter under the beam collimation condition of incidence, and the dot-and-dash line curve is light beam with the passband transmittance curve of spike interference filter in the oblique firing angle θ of maximum=14 ° oblique incidence situation.

Comprise four kinds of extreme cases in Fig. 8 and Fig. 9:

The first, active flag device luminescent device local space environment temperature is 40 ℃, and beam collimation incident spike interference filter;

The second, active flag device luminescent device local space environment temperature is 40 ℃, and light beam is with 14 ° of oblique incidence spike interference filters of the oblique firing angle of maximum;

The 3rd, active flag device luminescent device local space environment temperature is-10 ℃, and beam collimation incident spike interference filter;

The 4th, active flag device luminescent device local space environment temperature is-10 ℃, and light beam is with 14 ° of oblique incidence spike interference filters of oblique firing angle.

In Fig. 8, the active flag device is in the hot operation state, and its luminescent device local space environment temperature rises to 40 ℃, and in its curve of spectrum, peak wavelength is about 941+2.55=943.55nm, and line width is about 50nm.And the passband width of hypothesis spike interference filter is 24nm, passband when keeping room temperature during collimation incident does not drift about, so the centre wavelength of spike interference filter is still 944.3nm, and the passband during with oblique firing angle θ=14 ° of oblique incidences is to the about 10nm of weakness drift.As seen from Figure 8, when the active flag device is in the hot operation state, the passband centre wavelength of spike interference filter adapts in the curve of spectrum of active flag device the A point between the B point, be in the higher range of its line width middle part, the peak excursion of the passband centre wavelength of spike interference filter and active flag device peak wavelength only has 9.25nm, be in the whole course of work, the passband centre wavelength of spike interference filter can keep best-fit near active flag device peak wavelength (approximately equal).

In Fig. 9, the active flag device is in the low-temperature working state, and its luminescent device local space environment temperature drops to-10 ℃, and in its curve of spectrum, peak wavelength is about 941-5.95=935.05nm, and line width is about 50nm.And the passband width of hypothesis spike interference filter is 24nm, passband when keeping room temperature during collimation incident does not drift about, so the centre wavelength of spike interference filter is still 944.3nm, and the passband during with oblique firing angle θ=14 ° of oblique incidences is to the about 10nm of weakness drift.As seen from Figure 9, when the active flag device is in the low-temperature working state, the passband centre wavelength of spike interference filter adapts in the curve of spectrum of active flag device the C point between the D point, still be in the higher range of its line width middle part, the peak excursion of the passband centre wavelength of spike interference filter and active flag device peak wavelength only has 9.25nm, be in the whole course of work, the passband centre wavelength of spike interference filter can keep best-fit near active flag device peak wavelength (approximately equal).

Therefore, can draw from Fig. 8 and curve shown in Figure 9, when the temperature effect factor of the oblique incidence drift of considering spike interference filter and active flag device affects, under room temperature and spike interference filter collimation condition of incidence according to formula 4) the passband centre wavelength of spike interference filter is carried out the oblique incidence compensation after, can obtain the best-fit state of active flag device and spike interference filter.

Before use, influence factor according to required consideration, carry out adaptive calculating between peak wavelength to the passband centre wavelength of spike interference filter and active flag device, as carry out the oblique incidence compensation, finally to determine spike interference filter and the active flag device that is used.during use, before spike interference filter 200 is placed in the camera lens of camera head 300, active flag device 100 radiation near-infrared light waves, the light beam of incident spike interference filter 200 filters via spike interference filter 200, then gathered by shooting device 300, be sent to imaging processing equipment 400, 400 pairs of light signals that send of imaging processing equipment carry out opto-electronic conversion, landmark identification etc. are processed (known technology), in the image that obtains after processing, active flag device 100 is separated by the circle of good definition with other luminous object, eliminated the interference that sunlight and other parasitic light bring active flag device 100, accurately identified active flag device 100.

Can find out from experiment, if do not use the present invention, the image that obtains after imaging processing equipment 400 is processed is a vast expanse of whiteness, can't carry out the identification of active flag device at all.

If use the present invention, in the image that obtains after imaging processing equipment 400 is processed, the active flag device is separated by the circle of good definition with other luminous object, has eliminated the interference that sunlight and other parasitic light bring the active flag device, can accurately identify the active flag device.

For example, the active flag device is in the sunlight background, makes sunbeam with oblique firing angle (minimum critical incident angle) the incident spike interference filter of 3.6 °, and the image that obtains after imaging processing equipment 400 is processed as shown in figure 10.In Figure 10, larger white portion is the sunlight interference region, it is limited in a less regional area, be approximately 1/20th of whole field of view, less white portion in Figure 10 be the active flag device (here, for clear expression effect of the present invention, active flag device herein only is comprised of a far field or near field active flag device) image patch.Experiment shows, as long as the incident angle of the light beam of active flag device radiation departs from certain angle, the image patch of active flag device and sunlight interference region is distinguished.And experiment also shows, 3.6 ° is can differentiate the sunlight minimum critical incident angle that active flag device image patch allows after using the present invention.

And when the oblique firing angle of sunbeam incident spike interference filter during greater than the field angle of camera head, the interference of sunlight can be completely eliminated, as shown in figure 11, white portion in Figure 11 be the active flag device (here, for clear expression effect of the present invention, active flag device herein only is comprised of a far field or near field active flag device) image patch.

And when night, the present invention can eliminate the interference of moonlight and starlight fully, only keeps the image patch of active flag device in the image that obtains after imaging processing equipment 400 is processed.

In the present invention, camera head, imaging processing equipment are known equipment, and its concrete formation is not here described.

Advantage of the present invention is:

based on the interdiction countermeasure that obtains by the effect of sunlight analysis, the present invention utilizes spike interference filter and active flag device to set up a kind of continuous operation mode, in this pattern, the passband that spike interference filter has the narrow passband that approaches rectangle and a spike interference filter adapts to the spectral characteristic of this active flag device, the passband transmitance is high, only band covers the spectrum sensitive wavelength band of this camera head and ends dark, and the active flag device with less radiation power (for example, far field active flag device: 390 ~ 460mW, near field active flag device: 30 ~ 40mW), larger reach (for example, far field active flag device:〉(150m, ± 24 °), near field active flag device:〉(30m, ± 24 °)) be operated in near-infrared band.as long as the camera lens distance apart of this active flag device and this camera head is in set distance range, the light beam of this spike interference filter of incident is gathered by this camera head after filtering via this spike interference filter, imaging data rate of the present invention just is not subjected to the initiatively constraint of marker working method, working environment does not receive the constraint without sunlight, the image quality that obtains via the present invention is good, unimodal, evenly, symmetrical, and signal to noise ratio is very high, and in the image that obtains via the present invention, the image patch of active flag device is separated by clear with the sunlight interference region, can effectively eliminate the interference that sunlight and other parasitic light bring, complete landmark identification and the relative pose parameter measurement of active flag device, the functions such as Homing tracking, and detection range of the present invention is far away, scope is large, precision is high, can be widely used in photoelectric sensor, in the photoelectric communication system.Need to prove, for the accurate identification of while complement mark, accurate measurement and the Homing tracking of relative pose parameter, the active flag device should be at least three near field active flag devices and/or at least three far field active flag devices, to the active flag device that uses, should make every effort to set up the stereoscopic arrangement of intrinsic some invariant features, when only using three near field active flag devices or three far field active flag devices, should not arrange point-blank, the quantity of near, far field active flag device and concrete distribution form depending on measuring accuracy require and the application layout environment.

Above-mentioned is preferred embodiment of the present invention and the know-why used thereof; for a person skilled in the art; in the situation that do not deviate from the spirit and scope of the present invention; any based on apparent changes such as the equivalent transformation on the technical solution of the present invention basis, simple replacements, within all belonging to protection domain of the present invention.

Claims (6)

1. An adaptation system realized based on a narrow-band interference filter and an active marker, characterized in that: it includes a narrow-band interference filter, an active marker, and a camera, and the narrow-band interference filter is placed on the camera In front of the camera lens, the camera device is connected to the imaging processing equipment, the distance between the active marker working in the near-infrared band and the camera lens of the camera device is within a set distance range, and the light beam incident on the narrow-band interference filter passes through the The light is collected by the camera device after being filtered by the narrow-band interference filter, wherein the central wavelength of the passband of the narrow-band interference filter is approximately equal to the peak wavelength of the active marker. 2. The fitting system according to claim 1, characterized in that: The narrow-band interference filter includes a substrate made of quartz glass material, the upper and lower surfaces of the substrate are respectively plated with a main peak film system and a truncated peak film system, wherein: the main peak film system is four half-wave film system; the truncation peak film system is a truncation peak film stack. 3. The fitting system according to claim 2, characterized in that: The main peak film system is formed by alternate lamination of silicon dioxide film layers and niobium pentoxide film layers. The main peak film system is composed of at least 48 film layers, and the thickness of each layer of the silicon dioxide film layer is the same as that of the above-mentioned The ratio of the central wavelength of the quarter-pass band of the narrow-band interference filter is between 0.5 and 1.5, and the layer thickness of each niobium pentoxide film layer is the same as that of the quarter-pass band center of the narrow-band interference filter. The ratio of wavelengths is between 0.5 and 3.0; The truncation peak film system is formed by alternate lamination of silicon dioxide film layers and niobium pentoxide film layers. The truncation peak film system is composed of at least 118 film layers, and each layer of the silicon dioxide film layer is The ratio of the thickness to the central wavelength of the quarter-pass band of the narrow-band interference filter is between 0.2 and 2.0, and the layer thickness of each niobium pentoxide film layer is 1/4 of that of the narrow-band interference filter. The ratio of the central wavelength of a passband is between 0.1 and 2.0. 4. The fitting system according to claim 2 or 3, characterized in that: Coat black matt paint on the surrounding side walls of the narrow-band interference filter. 5. The fitting system according to claim 1, characterized in that: The active markers radiate conical near-infrared light toward the narrow-band interference filter, and the active markers are at least three near-field active markers and/or at least three far-field active markers. 6. The fitting system according to claim 2, characterized in that: When considering the oblique incidence drift of the narrow-band interference filter and the temperature effect factor of the active marker, the light-emitting device of the active marker is at room temperature and the work of collimating the light beam incident narrow-band interference filter In the case of the surface, oblique incidence compensation is carried out to the passband center wavelength of the narrowband interference filter according to the following formula, ${\mathrm{<span\; class="notranslate">\; \&lambda;</span>}}_{\mathrm{<span\; class="notranslate">\; 00</span>}}<span\; class="notranslate">\; =</span>\frac{\mathrm{<span\; class="notranslate">\; 2</span>}{\mathrm{<span\; class="notranslate">\; \&lambda;</span>}}_{\mathrm{<span\; class="notranslate">\; p</span>}\mathrm{<span\; class="notranslate">\; 0</span>}}<span\; class="notranslate">\; +</span>{\mathrm{<span\; class="notranslate">\; T</span>}}_{{\mathrm{<span\; class="notranslate">\; K\&lambda;</span>}}_{\mathrm{<span\; class="notranslate">\; P</span>}}}<span\; class="notranslate">\; \&times;</span><span\; class="notranslate">\; (</span>{\mathrm{<span\; class="notranslate">\; T</span>}}_{\mathrm{<span\; class="notranslate">\; max</span>}}<span\; class="notranslate">\; +</span>{\mathrm{<span\; class="notranslate">\; T</span>}}_{\mathrm{<span\; class="notranslate">\; min</span>}}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; 2</span>}{\mathrm{<span\; class="notranslate">\; T</span>}}_{\mathrm{<span\; class="notranslate">\; 0</span>}}<span\; class="notranslate">\; )</span>}{\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; +</span>\sqrt{\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>{<span\; class="notranslate">\; (</span>\frac{{\mathrm{<span\; class="notranslate">\; no</span>}}_{\mathrm{<span\; class="notranslate">\; 0</span>}}\mathrm{<span\; class="notranslate">\; sin</span>}{\mathrm{<span\; class="notranslate">\; \&theta;</span>}}_{\mathrm{<span\; class="notranslate">\; max</span>}}}{\mathrm{<span\; class="notranslate">\; e</span>}}<span\; class="notranslate">\; )</span>}^{\mathrm{<span\; class="notranslate">\; 2</span>}}}}$ In the above formula, T _max is the upper limit of temperature, T _min is the lower limit of temperature, T ₀ is room temperature, n ₀ is the refractive index of the substrate of the narrow-band interference filter, and e is the relationship with the narrow-band interference filter. The parameters related to the film material and film system, n _H >e>n _L , n _H is the refractive index of the niobium pentoxide film in the main peak film system and the truncation peak film system, and n _L is the main peak The refractive index of the silicon dioxide film layer in the film system and the truncation peak film system, θ _max is the maximum oblique incidence angle of the light beam obliquely incident on the working surface of the narrow-band interference filter, and T _Kλp is the active marker The temperature coefficient of the light-emitting device, λ ₀₀ is the passband center wavelength of the narrow-band interference filter when the light beam is collimated and incident on the working surface of the narrow-band interference filter, and λ _p0 is the active marker at room temperature peak wavelength.

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