CN103065012B - Method for creating wafer Map display model and using method thereof - Google Patents
Method for creating wafer Map display model and using method thereof Download PDFInfo
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- CN103065012B CN103065012B CN201210587860.0A CN201210587860A CN103065012B CN 103065012 B CN103065012 B CN 103065012B CN 201210587860 A CN201210587860 A CN 201210587860A CN 103065012 B CN103065012 B CN 103065012B
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000013078 crystal Substances 0.000 claims abstract description 118
- 238000012360 testing method Methods 0.000 claims abstract description 28
- 238000002372 labelling Methods 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 4
- 239000003086 colorant Substances 0.000 claims description 3
- 238000009795 derivation Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 3
- 230000006870 function Effects 0.000 abstract description 16
- 239000000523 sample Substances 0.000 description 5
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- 230000008901 benefit Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005314 correlation function Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000004899 motility Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/80—Technologies aiming to reduce greenhouse gasses emissions common to all road transportation technologies
- Y02T10/82—Elements for improving aerodynamics
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Abstract
A method for establishing a wafer Map display model and a using method thereof are disclosed, firstly, a dynamic link library wafer Map is established, a CStic-based export class CWaferMap is newly established, a wafer Map coordinate model is established, each grain is regarded as a point, and coordinates are distributed to each grain; judging whether the distributed coordinates are in the range of the wafer or not, drawing small squares representing crystal grains in the wafer according to the crystal grains in the range of the wafer, and forming a Map display image of the wafer; creating a binary file for storing the crystal grain information and redrawing the crystal grain test condition after zooming, calculating the storage address of the information of each crystal grain in the file, and writing the crystal grain information into the file; and acquiring a motor pulse coordinate of the current crystal grain, calculating a Map coordinate of the current crystal grain according to the motor pulse coordinate and the center motor pulse coordinate of the wafer, marking the corresponding crystal grain displayed on the Map and storing the mark into a binary file. The invention has multiple functions, strong portability and high flexibility.
Description
Technical field
The present invention relates to semiconducter device testing technical field, be specifically related to creation method and the using method thereof of a kind of wafer Map display model in probe test equipment.
Background technology
In probe test equipment, needing to show in real time the information of wafer, including the distribution of crystal grain on wafer, whether wafer has trimming, the die locations the most tested, and has tested the category level etc. of crystal grain.
At present, all there is respective wafer Map display model in the manufacturer of each probe test equipment, and basic function is close.But those model functions are more weak, transplantability is poor, underaction changes to adapt to difference.
Summary of the invention
The invention aims to overcome shortcoming of the prior art to provide creation method and the using method thereof of a kind of multi-functional wafer Map display model, aiming to solve the problem that existing wafer Map display model function is more weak, transplantability is poor, underaction is with the problem adapting to different change.
A kind of wafer Map display model, is created by:
Create a dynamic link library WaferMapDll, a newly-built derivation class CWaferMap based on CStatic, obtain the handle HDC for drawing, set up wafer Map coordinate model, each crystal grain is regarded as a point, is that each crystal grain distributes coordinate with the Map coordinate of center crystal grain for (0,0)；
In the range of being judged as whether the described Map coordinate that each crystal grain distributes is in wafer, and draw out according to the crystal grain being in the range of wafer and represent the lattice of crystal grain in wafer, form wafer Map display figure；
Create the binary file of test case redrawing crystal grain after preserving crystal grain information and scaling, calculate the information of each crystal grain storage address in described file, and the crystal grain information that will calculate writes described file；
After wafer is placed on the wafer-supporting platform of testboard, obtain the motor pulses coordinate of current grain, motor pulses coordinate according to this current grain and the motor pulses coordinate of crystal circle center, calculate current grain Map coordinate on wafer Map display figure, according to the current grain calculated Map coordinate on wafer Map display figure, to the corresponding crystal grain labelling of display on Map display figure and be stored in above-mentioned binary file.
The described method judging whether the described Map coordinate distributed for each crystal grain is in the range of wafer is as follows:
According to the Map coordinate distributed for each crystal grain utilize formula below calculate crystal grain center relative to crystal circle center's length coordinate,
Lx = Mx * Sx + Parx * 0.5 * Sx；
Ly = My * Sy + Pary * 0.5 * Sy；
Wherein, Mx and My is the Map coordinate for crystal grain distribution, Sx and Sy is the size of crystal grain, Parx and Pary is the parity of crystal grain distribution, Lx with Ly is the crystal grain center length coordinate relative to crystal circle center；
Formula below is utilized to calculate distance C at crystal grain center and crystal circle center according to above-mentioned length coordinate,
C= (Lx * Lx
+ Ly * Ly)1/2；
Being compared with the radius R of wafer with distance C of crystal circle center at grain center, if C < R, then the crystal grain of this coordinate representation is in wafer；Otherwise, outside wafer.
Described lattice can be depicted as different colors as required.
Described crystal grain information is by the variable storage of a Byte type.
The formula of the described information calculating each crystal grain storage address in described file is as follows:
P = (Nx + Mx) + (Ny + My) * Nx * 2；
Wherein, Mx and My is the Map coordinate for crystal grain distribution, Nx and Ny is the wafer crystal grain number that X, the radius of Y-direction at most can be distributed on wafer Map display figure, and P is the information of each crystal grain storage address in described file.
The described motor pulses coordinate according to this current grain and the motor pulses coordinate of crystal circle center, the computing formula calculating current grain Map coordinate on wafer Map display figure is as follows:
Mapx = (Pulx – Zx + Sx / 2) / Sx；
Mapy = (Puly – Zy + Sy / 2) / Sy；
Wherein, Mapx and Mapy is the Map coordinate of current grain, Sx and Sy is the size of crystal grain, Pulx and Puly is the motor pulses coordinate of the current grain obtained, Zx and Zy is the motor pulses coordinate of crystal circle center.
Wafer Map model of the present invention, it is possible to show crystal grain distribution situation on wafer intuitively, and the test case of wafer can be represented dynamically, test result can be preserved, and there is the expanded functions such as editor, scaling；Meanwhile, this model is easy to use, can be inserted into flexibly in the software system of various structure, make suitably modified after, it is also possible to by other need use wafer Map display model device software utilize.
The using method of wafer Map display model of the present invention, comprises the following steps:
In the system using this wafer Map display model, it is first directed to dynamic link library WaferMapDll, a dynamic or static newly-built CWaferMap object, set display position and the size of view of Map object；
Change the color of Map display figure as required, then set the type of wafer, color and the characteristic parameter such as sheet footpath and crystallite dimension, call the function of display wafer Map display figure；
In test process, call function on wafer Map display figure, show the test result of each crystal grain；
At Map display figure, specific die is marked as required, including coordinate and the type of specifying crystal grain；
After having tested, can call function as required and preserve test result, the Map figure this test completed preserves, and can save as Bmp bitmap format or txt form.
The method have the advantages that
1, the wafer Map display model that the present invention provides, it is achieved that abundant function, including: the most accurately show the crystal grain distribution at wafer；2. abundant configuration feature, such as color, shape, ratio etc.；3. test scope can arbitrarily be edited；4. result preserves function etc..
2, utilize the present invention, the motion of probe station and test case can be carried out real-time analog information, facilitate operator to understand the duty of equipment, and the test result of wafer can be shown intuitively.
3, the model encapsulation of the present invention is in dynamic link library, and for using the system of the present invention, the upgrading of this module is very convenient, does not interferes with other parts of system.It addition, be also not intended to which kind of programming language is system use, there is considerable flexibility.Function of the present invention is many, and transplantability is strong, and motility is high, it is adaptable to the wafer sort technology in probe test equipment.
Accompanying drawing explanation
Fig. 1 show the use flow chart of the wafer Map display model that the embodiment of the present invention provides.
Fig. 2 show the schematic diagram of the circular wafer Map display figure that the present invention provides；
Fig. 3 show the schematic diagram of the wafer Map display figure of the annular that the present invention provides；
Fig. 4 show the schematic diagram of the wafer Map display figure of the rectangle that the present invention provides；
Fig. 5 show the schematic diagram carrying out crystal grain labelling at circular wafer Map display figure that the present invention provides.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing, the present invention is further elaborated.
The present invention utilizes configurable parameter, draws the crystal grain distribution that wafer Map display figure is simulated on wafer, and the color of this wafer Map display figure, shape, size all can be arranged.
Model encapsulation of the present invention is in dynamic link library, and the upgrading making this model is convenient, does not affect other parts of the system using this model.It addition, be also not intended to which kind of programming language is system use, it be available for different language and call flexibly.During use, it is only necessary to comprise dynamic link library, the object of a newly-built Map class in the system needing to use this model, calling correlation function can the test mode of real-time Simulation display wafer.
The establishment process steps of wafer Map display model of the present invention is as follows:
Step 1: create a dynamic link library WaferMapDll, a newly-built derivation class CWaferMap based on CStatic, obtains the handle HDC for drawing, sets up the coordinate model of wafer Map, each crystal grain regards as a point, distributes coordinate for it.The crystal grain Map coordinate at center is (0,0), and the Map coordinate of remaining crystal grain can calculate with the position relationship of center crystal grain according to it.
Step 2: according to formula 1,2, in the range of judging whether the crystal grain Map coordinate that upper step calculates is in wafer successively, and draws out the lattice of the crystal grain represented in wafer, forms wafer Map display figure according to the crystal grain being in the range of wafer.This lattice can be depicted as different colors as required.Computing formula is as follows:
According to the Map coordinate computational length coordinate distributed for crystal grain,
Formula 1:Lx=Mx * Sx+Parx * 0.5
* Sx；
Ly = My * Sy + Pary * 0.5 * Sy；
Wherein: Mx and My is the Map coordinate for crystal grain distribution, Sx and Sy is the size of crystal grain, Parx and Pary is the parity of crystal grain distribution, Lx with Ly is the crystal grain center length coordinate relative to crystal circle center；
Calculate distance C at crystal grain center and crystal circle center,
Formula 2:C=(Lx *
Lx + Ly * Ly)1/2；
Being compared with the radius R of wafer with distance C of crystal circle center at grain center, if C < R, then the crystal grain of this coordinate representation is in wafer；Otherwise, outside wafer；
Step 3: create a binary file, for preserving the information of crystal grain, this document redraws the test case of crystal grain after scaling.Described crystal grain information by the variable storage of a Byte type, calculates the information of each crystal grain storage address P hereof according to formula 3, crystal grain information is write file.Computing formula is as follows:
Formula 3:P=(Nx+Mx)+(Ny+My)
* Nx * 2；
Wherein: Mx and My is the Map coordinate for crystal grain distribution, Nx and Ny is the wafer crystal grain number that X, the radius of Y-direction at most can be distributed on wafer Map display figure, and P is the information of each crystal grain storage address in described file.
Step 4: after wafer is placed on the wafer-supporting platform of testboard, this wafer Map display model can obtain the motor pulses coordinate of current grain, and the motor pulses coordinate of crystal circle center is known, current grain Map coordinate on wafer Map display figure can be calculated according to formula 4, according to test result, the corresponding crystal grain marker color that Map figure is shown, and it is stored in above-mentioned binary file.
Computing formula is as follows:
Formula 4:Mapx=(Pulx Zx+Sx/2)/Sx；
Mapy = (Puly – Zy + Sy / 2) / Sy；
Wherein: Mapx and Mapy is the Map coordinate of current grain, Sx and Sy is the size of crystal grain, Pulx and Puly is the motor pulses coordinate of the current grain obtained, Zx and Zy is the motor pulses coordinate of crystal circle center.
The display figure of the wafer Map display model after making, see shown in Fig. 2 ~ 4, it can be the circle shown in Fig. 2, can be with the rectangle shown in Fig. 4, may also be annular shown in Fig. 3, the situation carrying out crystal grain labelling on circular display figure is shown in Figure 5, and in this Fig. 5, the lattice of the upper end position triangle mark of rounded indication chart represents the die locations situation of labelling.
Owing to CWaferMap class provides a series of interface function for external call, it is only used in need to use in the software system of this model and comprises WaferMapDll dynamic base, the object of the most newly-built CwaferMap class, calls its relevant interface function, it is possible to realize the control to Map model.
Below, to using wafer Map display model of the present invention to be described as follows.
Shown in Figure 1, the use flow chart of wafer Map display model of the present invention, comprise the following steps:
In the system using this wafer Map display model, it is first directed to dynamic link library WaferMapDll, a dynamic or static newly-built CWaferMap object, set display position and the size of view of Map object；
Change the color of Map display figure as required, then set the characteristic parameter such as size of the type of wafer, color and sheet footpath and crystal grain, call the function of display wafer Map display figure；
In test process, call function on wafer Map display figure, show the test result of each crystal grain；
At Map display figure, specific die is marked as required, including coordinate and the type of specifying crystal grain；
After having tested, can call function as required and preserve test result, the Map figure this test completed preserves, and can save as Bmp bitmap format or txt form.
The above is only the preferred embodiment of the present invention; it should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (7)
1. the creation method of a wafer Map display model, it is characterised in that be created by:
Create a dynamic link library WaferMapDll, a newly-built derivation class CWaferMap based on CStatic, obtain the handle HDC for drawing, set up wafer Map coordinate model, each crystal grain is regarded as a point, is that each crystal grain distributes coordinate with the Map coordinate of center crystal grain for (0,0)；
In the range of being judged as whether the described Map coordinate that each crystal grain distributes is in wafer, and draw out according to the crystal grain being in the range of wafer and represent the lattice of crystal grain in wafer, form wafer Map display figure；
Create the binary file of a test case redrawing crystal grain after preserving crystal grain information and scaling, calculate the information of each crystal grain storage address in described binary file, and each crystal grain information is written in described binary file by the described storage address calculated；
After wafer is placed on the wafer-supporting platform of testboard, obtain the motor pulses coordinate of current grain, motor pulses coordinate according to this current grain and the motor pulses coordinate of crystal circle center, calculate current grain Map coordinate on wafer Map display figure, according to the current grain calculated Map coordinate on wafer Map display figure, to the corresponding crystal grain labelling of display on Map display figure and be stored in above-mentioned binary file.
The creation method of wafer Map display model the most according to claim 1, it is characterised in that the described method judging whether the described Map coordinate distributed for each crystal grain is in the range of wafer is as follows:
According to the Map coordinate distributed for each crystal grain utilize formula below calculate crystal grain center relative to crystal circle center's length coordinate,
Lx = Mx * Sx +
Parx * 0.5 * Sx；
Ly = My * Sy + Pary * 0.5 * Sy；
Wherein, Mx and My is the Map coordinate for crystal grain distribution, Sx and Sy is the size of crystal grain, Parx and Pary is the parity of crystal grain distribution, Lx with Ly is the crystal grain center length coordinate relative to crystal circle center；
Formula below is utilized to calculate distance C at crystal grain center and crystal circle center according to above-mentioned length coordinate,
C= (Lx * Lx + Ly *
Ly)1/2；
Being compared with the radius R of wafer with distance C of crystal circle center at grain center, if C < R, then the crystal grain of this coordinate representation is in wafer；Otherwise, outside wafer.
The creation method of wafer Map display model the most according to claim 1, it is characterised in that described lattice can be depicted as different colors as required.
The creation method of wafer Map display model the most according to claim 1, it is characterised in that described crystal grain information is by the variable storage of a Byte type.
The creation method of wafer Map display model the most according to claim 1, it is characterised in that the formula of the described information calculating each crystal grain storage address in described file is as follows:
P = (Nx + Mx) + (Ny + My) * Nx * 2；
Wherein, Mx and My is the Map coordinate for crystal grain distribution, Nx and Ny is the wafer crystal grain number that X, the radius of Y-direction at most can be distributed on wafer Map display figure, and P is the information of each crystal grain storage address in described file.
The creation method of wafer Map display model the most according to claim 1, it is characterized in that, the described motor pulses coordinate according to this current grain and the motor pulses coordinate of crystal circle center, the computing formula calculating current grain Map coordinate on wafer Map display figure is as follows:
Mapx = (Pulx – Zx + Sx / 2) / Sx；
Mapy = (Puly – Zy + Sy / 2) / Sy；
Wherein, Mapx and Mapy is the Map coordinate of current grain, Sx and Sy is the size of crystal grain, Pulx and Puly is the motor pulses coordinate of the current grain obtained, Zx and Zy is the motor pulses coordinate of crystal circle center.
7. the using method of wafer Map display model described in an any one of claim 1-6, it is characterised in that
In the system using this wafer Map display model, it is first directed to dynamic link library WaferMapDll, a dynamic or static newly-built CWaferMap object, set display position and the size of view of Map object；
Change the color of Map display figure as required, then set the type of wafer, color and sheet footpath and crystallite dimension characteristic parameter, call the function of display wafer Map display figure；
In test process, call function on wafer Map display figure, show the test result of each crystal grain；
At Map display figure, specific die is marked as required, including coordinate and the type of specifying crystal grain；
After having tested, can call function as required and preserve test result, the Map figure this test completed preserves, and can save as Bmp bitmap format or txt form.
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| CN104519011B (en) * | 2013-09-27 | 2018-06-15 | 无锡华润微电子有限公司 | Semiconductor equipment manages system and its protocol conversion module, semiconductor equipment management method |
| TWI494561B (en) * | 2013-12-19 | 2015-08-01 | Chroma Ate Inc | Method of mapping coordinates for inspecting a wafer |
| TWI593469B (en) * | 2014-05-22 | 2017-08-01 | 旺矽科技股份有限公司 | Die marking method and die marking equipment |
| CN105224776B (en) * | 2014-05-26 | 2018-06-08 | 中芯国际集成电路制造(上海)有限公司 | A kind of wafer test result comparison method and system |
| CN106353670A (en) * | 2016-10-28 | 2017-01-25 | 上海华岭集成电路技术股份有限公司 | Multi-target wafer test method |
| CN110007208B (en) * | 2019-04-19 | 2021-02-12 | 上海华虹宏力半导体制造有限公司 | Radio frequency power capacity value measuring method |
| CN111046561A (en) * | 2019-12-16 | 2020-04-21 | 江苏晟驰微电子有限公司 | Data map analysis method for wafer test |
| CN115705466B (en) * | 2021-08-12 | 2025-05-16 | 吉林华微电子股份有限公司 | A method for drawing wafer map |
| CN114816248A (en) * | 2022-04-15 | 2022-07-29 | 武汉精立电子技术有限公司 | Wafer rapid detection method, system and medium suitable for machine platform matching |
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| EP0580895A2 (en) * | 1992-07-24 | 1994-02-02 | Fujitsu Limited | Method of mapping a tested semiconductor device |
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| JP4310090B2 (en) * | 2002-09-27 | 2009-08-05 | 株式会社日立製作所 | Defect data analysis method and apparatus, and review system |
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| EP0580895A2 (en) * | 1992-07-24 | 1994-02-02 | Fujitsu Limited | Method of mapping a tested semiconductor device |
| CN101179044A (en) * | 2006-11-07 | 2008-05-14 | 中芯国际集成电路制造(上海)有限公司 | Novel crystal round locating bias correcting method |
| CN102376599A (en) * | 2010-08-10 | 2012-03-14 | 中芯国际集成电路制造(上海)有限公司 | Generation method and device of qualified crystal grain distribution pattern |
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