CN103011824A - Metamaterial dielectric substrate material and preparation method thereof - Google Patents

Abstract

The invention provides a metamaterial medium substrate material and a preparation method thereof, comprising the following steps: 1011. mixing boron-doped nano-silicon carbide powder, a solvent, and a surfactant and grinding them into fine particles; 1012. grinding the fine particles Ultrasonic washing and drying; 1013. Sintering fine particles into boron-doped nano-silicon carbide ceramics by hot isostatic pressing; 102. Selecting different mass ratios of boron and nano-silicon carbide according to needs, repeating the above steps to obtain different ceramics, It is sintered to form the dielectric substrate material of the metamaterial. By applying the preparation method of the invention, the thermal conductivity of the metamaterial dielectric substrate material can be improved, and the dielectric loss of the substrate material can be reduced. In addition, boron powder is added as an additive during the preparation of silicon carbide ceramic materials, which significantly reduces the overall sintering temperature of silicon carbide ceramic materials.

Description

A metamaterial dielectric substrate material and preparation method thereof

【Technical field】

The invention relates to the field of metamaterials, in particular to a metamaterial dielectric substrate material and a preparation method thereof.

【Background technique】

Metamaterials are generally composed of multiple metamaterial functional plates stacked or combined according to other regular arrays. The metamaterial functional plate includes a dielectric substrate and multiple artificial microstructures arrayed on the dielectric substrate. The existing metamaterial dielectric substrate is a uniform material. Organic or inorganic substrates, such as FR4, TP1, etc. Multiple artificial microstructures arrayed on a dielectric substrate have specific electromagnetic properties and can generate electromagnetic responses to electric or magnetic fields. By precisely designing and controlling the structure and arrangement of the artificial microstructures, metamaterials can exhibit various Electromagnetic properties that ordinary materials do not have, such as the ability to converge, diverge, and deflect electromagnetic waves.

Nano-silicon carbide has high purity, small particle size, uniform distribution, large specific surface area, high surface activity, excellent mechanical, thermal, electrical and chemical properties, that is, high hardness, high wear resistance and good self-lubricating ability. And it has high thermal conductivity, low dielectric loss and low thermal expansion coefficient and excellent mechanical properties. Silicon carbide nanomaterials have the characteristics of high band gap, high critical breakdown electric field and thermal conductivity, low dielectric constant and high electron saturation mobility, strong radiation resistance, and good mechanical properties. It is an ideal material for electronic and optoelectronic devices with high frequency, high power, low energy consumption, high temperature resistance and radiation resistance.

Hot isostatic pressing (hot isostatic pressing, referred to as HIP) is a production technology that integrates high temperature and high pressure. The heating temperature is usually 1000-2000 ° C. By using high-pressure inert gas or nitrogen in a closed container as the pressure transmission medium , working pressure up to 200MPa. Under the joint action of high temperature and high pressure, the processed parts are evenly pressed in all directions, so the processed products have high density, good uniformity and excellent performance. The technology also has the characteristics of short production cycle, few processes, low energy consumption, and low material loss.

With the continuous development of the metamaterial industry, the requirements for the dielectric substrate have been greatly improved. The previous dielectric substrate material is a high molecular polymer, which has low thermal conductivity. Therefore, it is necessary to develop a high thermal conductivity, low dielectric loss, and excellent mechanical properties. As a dielectric substrate material, it is of great significance to improve the performance of metamaterials.

【Content of invention】

The technical problem to be solved by the present invention is to provide a metamaterial dielectric substrate material and its preparation method. The preparation method has a simple production process, and the metamaterial dielectric substrate material has the characteristics of low dielectric loss and high thermal conductivity. As the grain size decreases, the superplastic properties of nanomaterials are enhanced. Therefore, the mechanical properties of nanoceramic materials prepared by this method are quite superior, which is conducive to large-scale industrial production and has good development and application prospects.

To achieve the purpose of the invention, the present invention firstly provides a metamaterial dielectric substrate material and a preparation method thereof, comprising the following steps:

101. Preparation of boron-doped nano silicon carbide ceramics;

102. Select boron and nano-silicon carbide with different mass ratios as required, repeat the above steps to obtain different ceramics, and sinter them to form the dielectric substrate material of the metamaterial.

The preparation of boron-doped nano-silicon carbide ceramics in step 101 includes the following steps:

1011. Grinding boron-doped nano-silicon carbide powder, solvent, and surfactant into fine particles after mixing;

1012. The fine particles after grinding are ultrasonically washed and dried;

1013. Using the hot isostatic pressing process to sinter fine particles into boron-doped nano-silicon carbide ceramics.

As a specific implementation, in the step 1011, the mass ratio of boron in the boron-doped nano-silicon carbide powder is 0.1%-20%.

As a specific implementation, in the step 1011, the purity of the nano-silicon carbide powder is ≥99%.

As a specific implementation, in the step 1011, the particle size of the boron-doped nano-silicon carbide powder is 30-100 nm.

As a specific embodiment, in the step 1011, the solvent is water and ethanol, and the mass ratio of the two is water:ethanol=9:1.

As a specific embodiment, in the step 1011, the surfactant is triolein, and the mass ratio of the surfactant is 0-1%.

As a specific implementation, in the step 1013, the sintering pressure of the hot isostatic pressing process is controlled at 800-1000 MPa, the sintering temperature is controlled at 1500-1800° C., and the sintering time is controlled at 5-15 minutes.

A metamaterial dielectric substrate material, the dielectric substrate material is sintered from boron-doped nano-silicon carbide ceramics, and the mass ratio of boron in the boron-doped nano-silicon carbide ceramics is 0.1%-20%.

By applying the metamaterial dielectric substrate material and its preparation method of the present invention, doping boron in the process of sintering nano-silicon carbide ceramics can effectively improve the thermal conductivity of the substrate material, enhance the mechanical properties of the substrate material, and reduce the dielectric of the dielectric substrate. Loss is of great significance for the development of packaging technology of metamaterials.

【Description of drawings】

Fig. 1, the flow chart of the preparation method of the metamaterial dielectric substrate material.

Fig. 2, the flow chart of the preparation method of boron-doped nano-silicon carbide ceramics.

【Detailed ways】

The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

The invention uses the hot isostatic pressing process to manufacture nano-silicon carbide ceramics, and uses it as a raw material to prepare the medium substrate material of the metamaterial. Boron is added as an additive in the hot isostatic pressing process, which can reduce the sintering temperature and improve the medium of the metamaterial. The thermal conductivity of the substrate material reduces the dielectric loss of the substrate material. Ceramic materials made of nano-silicon carbide have small grain size and enhanced superplasticity. Therefore, the dielectric substrate material using nano-silicon carbide ceramics as a supermaterial can enhance the mechanical properties of the dielectric substrate material. Different ceramics can be obtained by controlling the amount of additives as required, and different ceramics can be sintered to make metamaterial dielectric substrate materials with specific properties.

Example 1

The preparation method of the present embodiment is as follows:

1011. Mix 1.2g of boron, 6.8g of nano-silicon carbide powder with a particle size of 30nm and a purity of 99%, 90g of water, 10g of ethanol, and 1.08g of glycerol trioleate to form fine particles;

1012. The fine particles after grinding are ultrasonically washed and dried;

1013. Use the hot isostatic pressing process to sinter fine particles into boron-doped nano-silicon carbide ceramics. When using the hot isostatic pressing process for sintering, control the pressure at 980MPa, control the sintering temperature at 1600°C, and control the time at 10min.

102. Take 0.91g of boron, 6.09g of nano-silicon carbide powder with a particle size of 30 μm and a purity of 99%, 90g of water, 10g of ethanol, and 1.07g of triolein and grind them into fine particles. Other conditions remain unchanged, and repeat step 1011 -1013, obtaining different boron-doped nano-silicon carbide ceramics, and sintering the two kinds of boron-doped nano-silicon carbide ceramics prepared through the above steps into a dielectric substrate material of a metamaterial.

Example 2

Sometimes, in order to make the method of preparing metamaterial dielectric substrate materials more flexible and the preparation process easier to control, the following methods can be used:

1011. Mix 0.55g of boron, 4.95g of nano-silicon carbide powder with a particle size of 30 μm and a purity of 99.99%, 45g of water, 5g of ethanol, and 0.555g of triolein, and then grind it into fine particles;

1012. The fine particles after grinding are ultrasonically washed and dried;

1013. Use the hot isostatic pressing process to sinter fine particles into boron-doped nano-silicon carbide ceramics. When using the hot isostatic pressing process for sintering, control the pressure at 980 MPa, control the sintering temperature at 1600 ° C, and control the time at 8 minutes.

102. Take 0.804g of boron, 5.896g of nano-silicon carbide powder with a particle size of 30 μm and a purity of 99%, 72g of water, 8g of ethanol, and 0.867g of triolein and grind them into fine particles. Other conditions remain unchanged, and repeat step 1011 -1013, to obtain boron-doped nano-silicon carbide ceramics with different microstructures; get 0.72g of boron, 3.28g of nano-silicon carbide powder with a particle size of 30 μm and a purity of 99%, 72g of water, 8g of ethanol, and 0.84g of glycerol trioleate Mix and grind into fine particles, and keep other conditions unchanged, repeat steps 1011-1013 to obtain different boron-doped nano-silicon carbide ceramics, and sinter the three kinds of boron-doped nano-silicon carbide ceramics made through the above steps to form a metamaterial dielectric substrate material .

The method for preparing the metamaterial dielectric substrate material in the above embodiments is simple, the preparation conditions are not high, and it is easy to implement. The boron-doped nano-silicon carbide ceramic substrate material has high thermal conductivity, and the dielectric substrate material prepared by using the characteristics of nano-silicon carbide itself greatly reduces the dielectric loss of the dielectric substrate material during the preparation process. Incorporating boron as an additive also reduces the temperature in the sintering process and has a good development prospect.

The above-mentioned embodiments of the present invention are only exemplary descriptions, and those skilled in the art can make various modifications to the present invention without departing from the spirit and scope of the present invention after reading this patent application.

Claims (9)

1. the preparation method of a super material medium baseplate material is characterized in that, may further comprise the steps:

101. preparation boron-doped nanometer silicon carbide ceramics;

102. select as required boron and the nanometer silicon carbide of different mass ratio, repeat above-mentioned steps, obtain different potteries, its sintering is formed the medium substrate material of super material.

2. the preparation method of super material medium baseplate material according to claim 1 is characterized in that, in the described step 101, prepares described boron-doped nanometer silicon carbide ceramics and may further comprise the steps:

1011. boron-doped nanometer silicon carbide powder, solvent, tensio-active agent are ground to form fine particle after mixing;

1012. the fine particle after will grinding is also dry with supersound washing;

1013. utilize heat and other static pressuring processes to sinter fine particle into boron-doped nanometer silicon carbide ceramics former material.

3. the preparation method of super material medium baseplate material according to claim 2 is characterized in that, in the described step 1011, the mass ratio of boron is 0.1%-20% in the described boron-doped nanometer silicon carbide powder.

4. the preparation method of super material medium baseplate material according to claim 2 is characterized in that, in the described step 1011, and the purity of described nanometer silicon carbide powder 〉=99%.

5. the preparation method of super material medium baseplate material according to claim 2 is characterized in that, in the described step 1011, the granularity of described boron-doped nanometer silicon carbide powder is 30-100nm.

6. the preparation method of super material medium baseplate material according to claim 2 is characterized in that, in the described step 1011, described solvent is water and ethanol, and both mass ratioes are water: ethanol=9: 1.

7. the preparation method of super material medium baseplate material according to claim 2 is characterized in that, in the described step 1011, described tensio-active agent is triolein, and the mass ratio of described tensio-active agent is 0-1%.

8. the preparation method of super material medium baseplate material according to claim 2, it is characterized in that, in the described step 1013, the sintering pressure of described heat and other static pressuring processes is controlled at 800-1000MPa, sintering temperature is controlled at 1500-1800 ℃, and sintering time is controlled at 5-15min.

9. a super material medium baseplate material is characterized in that, described medium substrate material is formed by boron-doped nanometer silicon carbide ceramics sintering, and the mass ratio of boron is 0.1%-20% in the described boron-doped nanometer silicon carbide ceramics.

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