CN103000569A - Metal liner manufacturing method - Google Patents
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- CN103000569A CN103000569A CN2011102740558A CN201110274055A CN103000569A CN 103000569 A CN103000569 A CN 103000569A CN 2011102740558 A CN2011102740558 A CN 2011102740558A CN 201110274055 A CN201110274055 A CN 201110274055A CN 103000569 A CN103000569 A CN 103000569A
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- 239000002184 metal Substances 0.000 title claims abstract description 114
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 114
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 59
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 208000005168 Intussusception Diseases 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 abstract description 11
- 238000012360 testing method Methods 0.000 abstract description 11
- 239000011229 interlayer Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 1
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000003701 mechanical milling Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Abstract
The invention provides a metal liner manufacturing method which is applied to top metal interconnection layers and includes reserving a plurality of cylindrical inter-level dielectrics in a metal liner area and close to the edge of a metal liner so as to offset and release pressure between the metal liner and the interface of the second interlayer dielectrics. By the method, stress is reduced greatly and reliability of the metal liner is improved on the premise of not affecting electrical property testing accuracy of devices, and besides, since the cylindrical second interlayer dielectrics are positioned at the edge area of the metal liner, electric connection between the metal liner and metal wires below cannot be blocked.
Description
Technical field
The present invention relates to a kind of semiconductor making method, particularly a kind of metal gasket manufacture method.
Background technology
At present, after the device layer manufacturing of semiconductor device part is finished, for can be when semiconductor device be worked applied voltage or electric current, need to make metal interconnecting layer above device layer, the metal interconnecting layer structure comprises: fill metal wire and the metal gasket (pad) that forms respectively behind the metal in the through hole of etching and the groove in the inter-level dielectric of device layer top deposition, the inter-level dielectric.Along with the development of semiconductor fabrication, integrated level was more and more higher when dimensions of semiconductor devices was constantly dwindled, and the number of metal interconnecting layer constantly increases, and wherein topmost the layer of metal interconnection layer is called top-level metallic interconnection layer (top metal).Generally use metallic copper filling vias and groove in the existing metal interconnecting layer fabrication processing, form metal wire and metal gasket, for the metal gasket in the top-level metallic interconnection layer, because the cavity blemish that stress (stress) produces between metal and inter-level dielectric interface, will have a strong impact on the electric connection of semiconductor device, cause integrity problem.
The below is with the metal gasket fabrication processing figure of the top-level metallic interconnection layer of as shown in Figure 1 prior art, and the metal gasket that describes the top-level metallic interconnection layer in detail is made detailed step.
Step 01, Fig. 2 is the cross-sectional view of step 01 of the metal gasket manufacture method of top-level metallic interconnection layer in the prior art, as shown in Figure 2, deposits successively the first inter-level dielectric 101 and the second inter-level dielectric 102 on the first metal interconnecting layer 100.
In this step, only describe take the first metal interconnecting layer 100 as the manufacture method of example to top-level metallic interconnection layer of the prior art, shown in the first metal interconnecting layer 100 can be in actual applications any layer of metal interconnection layer.
Step 02, Fig. 3 is the cross-sectional view of step 02 of the metal gasket manufacture method of top-level metallic interconnection layer in the prior art, as shown in Figure 3, on the second inter-level dielectric 102, apply the first photoresistance glue (PR), and a PR exposed, develops, thereby form the first photoengraving pattern 301.
Wherein, the first photoengraving pattern 301 in this step is used for defining position and the shape that forms groove 401 in the subsequent step.The shape definition that it should be noted that 301 pairs of grooves 401 of the first photoengraving pattern is not only A/F, also comprises the geometry of groove 401, the pad shape that namely forms in the subsequent step.The first photoengraving pattern 301 exposes part second inter-level dielectric 102 in pad zone.In the prior art, on interface between the metallic copper of pad and the second inter-level dielectric 102, because lattice coefficient and the thermal expansion coefficient difference of different materials, produce inevitably at the interface stress, especially, that considers pad is shaped as rectangle or square, and the stress of pad sharp corner (corner) is maximum.Therefore, in order to reduce as much as possible stress, the shape that needs the local pad of change, particularly, with when exposure mask used plate mask pattern (or the most close via an angle) carries out 45 degree chamferings additionally at rectangle or foursquare four angles, so that the first photoengraving pattern 301 after exposure and the development presents circular arc at the chamfering place, thereby in subsequent step, form the pad with arc chord angle, reduce the originally stress of pad sharp corner with this.In actual applications, under a PR, also be coated with bottom antireflective coating (BARC).
Step 03, Fig. 4 is the cross-sectional view of step 03 of the metal gasket manufacture method of top-level metallic interconnection layer in the prior art, as shown in Figure 4, carries out etching according to 301 pairs of the second inter-level dielectrics 102 of the first photoengraving pattern, thereby forms groove 401.
Step 04, Fig. 5 is the cross-sectional view of step 04 of the metal gasket manufacture method of top-level metallic interconnection layer in the prior art, as shown in Figure 5, the first photoengraving pattern 301 is peeled off rear coating the 2nd PR, the 2nd PR is exposed, develops, thereby form the second photoengraving pattern 501.
Specifically, mainly adopt two kinds of methods to peel off the first photoengraving pattern 301 and namely remove PR, the first, adopt oxygen (O
2) carrying out dry etching, chemical reaction occurs in oxygen and PR, PR can be removed; The second, also can adopt the wet method ashing method, for example, adopt the mixed solution of sulfuric acid and hydrogen peroxide PR can be removed.In this step, the part of the 2nd PR of coating is present on the second inter-level dielectric 102, and other of the 2nd PR are partially filled in groove 401.
In actual applications, under a PR, also be coated with BARC.
Wherein, the second photoengraving pattern 501 is used for defining the A/F of the through hole 601 in the subsequent step.
Step 05, Fig. 6 is the cross-sectional view of step 05 of the metal gasket manufacture method of top-level metallic interconnection layer in the prior art, as shown in Figure 6, carries out etching according to 501 pairs of the first inter-level dielectrics 101 of the second photoengraving pattern, thereby forms through hole 601.
Step 06, Fig. 7 is the cross-sectional view of step 06 of the metal gasket manufacture method of top-level metallic interconnection layer in the prior art, as shown in Figure 7, and after the second photoengraving pattern 501 peeled off, deposit and spread barrier layer 701 in through hole 601 and groove 401.
In this step, the method for photoresist lift off can be with reference to description relevant in the step 04.
In order to prevent that the metallic copper that deposits in the groove 401 and through hole 601 from falling to diffusing in the first inter-level dielectric 101 and the second inter-level dielectric 102 in subsequent step, adopt physical vapour deposition (PVD) (PVD) process deposits diffusion impervious layer 701.
Step 07, Fig. 8 is the cross-sectional view of step 07 of the metal gasket manufacture method of top-level metallic interconnection layer in the prior art, adopts PVD technique copper seed crystal layer 801 on diffusion impervious layer 701.
Step 08, Fig. 9 is the cross-sectional view of step 08 of the metal gasket manufacture method of top-level metallic interconnection layer in the prior art, as shown in Figure 9, adopt chemical plating process (ECP) growing metal copper 901 in groove 401 and through hole 601, form metal wire 902 in the through hole 601.
Step 09, Figure 10 is the cross-sectional view of step 09 of the metal gasket manufacture method of top-level metallic interconnection layer in the prior art, as shown in figure 10, adopt chemical mechanical milling tech (CMP) that metallic copper 901, copper seed layer 801 and diffusion impervious layer 701 are polished to the surface of the second inter-level dielectric 102, form metal gasket 1001 in the groove 401.
So far, the making flow process of top-level metallic interconnection layer finishes in the prior art.
Above-mentioned steps as seen, in the manufacturing process of top-level metallic interconnection layer, the position of groove 401, shape determine structure and the shape of metal gasket 1001.On mask plate in the step of designing and making mask pattern, can adopt in the position of the corner of metal gasket and make the mode of chamfering so that the corner location of the first photoengraving pattern 301 behind the exposure imaging forms the approximate circle arc shape, but because the restriction of the manufacture craft of mask plate is difficult to form desirable circular shape, therefore also proposed the regional metal gasket manufacture method that keeps some slits (slot) shape inter-level dielectric of a kind of metal gasket in close position, metal gasket edge, be used for offsetting and the metal gasket of release subsequent step formation and the pressure between the inter-level dielectric interface.But concerning the metal gasket that is used for the direct top-level metallic interconnection layer that contacts with tester (probe), if in the metal gasket position, stay some slit type inter-level dielectrics during the etching inter-level dielectric, because slit type inter-level dielectric shared area in metal gasket is larger, for the consideration (testing consideration) of device testing electrical property, can greatly affect the accuracy of testing electrical property.
Summary of the invention
In view of this, the technical problem that the present invention solves is: the metal gasket in the top-level metallic interconnection layer, larger for reducing the slit type inter-level dielectric of stress between metal gasket and the inter-level dielectric interface shared area in metal gasket, consideration for the device testing electrical property, if in metal gasket, form the inter-level dielectric of some slit types, can greatly affect the accuracy of testing electrical property.
For addressing the above problem, technical scheme of the present invention specifically is achieved in that
A kind of metal gasket manufacture method, be applied to the top-level metallic interconnection layer, the wafer with metal interconnecting layer is provided, deposit successively the first inter-level dielectric and the second inter-level dielectric on the described metal interconnecting layer, form before or after the through hole in described the first inter-level dielectric, the method also comprises:
Described the second inter-level dielectric applies the first photoresist post-exposure and develops and is formed for defining the first photoengraving pattern of metal gasket, and described the first photoengraving pattern keeps at least one cylindrical first photoresist part in the edge of metal gasket;
Described the second inter-level dielectric forms groove take described the first photoengraving pattern as mask etching, and described groove has cylindrical the second inter-level dielectric part closing on the edge;
In described groove after deposit and spread barrier layer and the copper seed layer, the intussusception growth metallic copper;
The described metallic copper of cmp, diffusion impervious layer and copper seed crystal are until expose described second medium layer surface.
The edge of described metal gasket has chamfering.
The center of circle of described cylindrical the second inter-level dielectric part is 1 to 10 micron to the minimum range scope at described metal gasket edge; The radius of described cylindrical the second inter-level dielectric part is 1 to 10 micron.
Described radius is less than described minimum range.
As seen from the above technical solutions, the invention provides a kind of metal gasket manufacture method, the method is keeping some cylindrical the second inter-level dielectrics near the metal gasket of position, edge zone, is used for offsetting and discharge the pressure between the medium interface between metal gasket that subsequent step forms and the second layer.For the metal gasket of top-level metallic interconnection layer, the method reduces stress greatly in the situation that does not affect device testing electrical property accuracy, improves the reliability of metal gasket.
Description of drawings
Fig. 1 is the metal gasket fabrication processing of prior art top-level metallic interconnection layer;
Fig. 2～10 are the metal gasket process for making cross-sectional view of prior art top-level metallic interconnection layer;
Figure 11 is the metal gasket fabrication processing of the specific embodiment of the invention one top-level metallic interconnection layer;
Figure 12～18 are the metal gasket manufacture method cross-sectional view of the specific embodiment of the invention one top-level metallic interconnection layer;
Figure 19 is the metal gasket vertical view of the specific embodiment of the invention one top-level metallic interconnection layer.
Embodiment
For make purpose of the present invention, technical scheme, and advantage clearer, referring to the accompanying drawing embodiment that develops simultaneously, the present invention is described in more detail.
The present invention proposes a kind of metal gasket manufacture method of top-level metallic interconnection layer, the method has added the structure that discharges stress in metal gasket, this structure can effectively discharge the pressure between metal gasket and the inter-level dielectric interface and can not affect the accuracy of the testing electrical property of device.The metal gasket fabrication processing of top-level metallic interconnection layer of the present invention shown in Figure 11 is described below by specific embodiment.
Specific embodiment one
In this step, only describe take the first metal interconnecting layer 100 as the manufacture method of example to top-level metallic interconnection layer of the prior art, shown in the first metal interconnecting layer 100 can be in actual applications any layer of metal interconnection layer.
Step 1102, Figure 13 is the cross-sectional view of step 1102 of the metal gasket manufacture method of top-level metallic interconnection layer among the present invention, as shown in figure 13, on the second inter-level dielectric 102, apply the first photoresistance glue (PR), and a PR exposed, develops, thereby be formed on first photoengraving pattern 1301 that the edge has a cylindrical PR1302 that closes in metal gasket zone.
In this step, in order further to reduce the at the interface stress of pad and the second inter-level dielectric 102, require the mask pattern of mask plate not only to carry out 45 degree chamferings at the pad sharp corner, also in the pad zone, keep a circular hole, method by the mask pattern of prior art designing and making mask plate is prior art, and this repeats no more.Here in the first photoengraving pattern 1301, the center of circle of a described cylindrical PR1302 is 1 to 10 micron to the minimum range scope at pad edge, for example, 1 micron, 3 microns or 10 microns, the radius of cylinder is 1 to 10 micron, for example, 1 micron, 3 microns or 10 microns, so that the first photoengraving pattern 1301 after exposure and the development is at the cylindrical PR1302 of pad zone reserve part.It should be noted that, has 1 cylindrical PR1302 in the pad zone of the first photoengraving pattern 1301 at least, namely the number of a cylindrical PR1302 is the integer more than or equal to 1, and the circle hole radius of this cylindrical PR1302 is less than the minimum range of its center of circle to pad edge the one PR.The circle hole radius of a cylindrical PR1302 in the present embodiment is 5 microns, a cylindrical PR1302 is positioned at the chamfering place, nearest two distances for a PR who defines the pad edge in its center of circle are 10 microns, the first photoengraving pattern as shown in figure 19 is at the vertical view in pad zone, the vertical view of a cylindrical PR is the circular hole 1901 near a PR1902 chamfered edges place, exposes the pad zone 1903 on the second medium layer.In the practical application, the first photoengraving pattern 1301 also can be in the four angular zones formation chamfering of pad, and only the position near the pad edge forms a cylindrical PR1302 part in the pad zone.
In actual applications, under a PR, also be coated with bottom antireflective coating (BARC).
The groove with cylindrical second inter-level dielectric 1,402 1401 that this step forms is with the difference of the groove of prior art: since in step 1102 the first photoengraving pattern 1301 of formation with compare in prior art, has a cylindrical PR1302 at the chamfering place in pad zone, therefore when carrying out etching according to 1301 pairs of the second inter-level dielectrics 102 of the first photoengraving pattern, because the covering of a cylindrical PR1302, stay cylindrical the second inter-level dielectric 1402 parts at the pad that carries out chamfering one jiao.In this step, the position of described cylindrical the second inter-level dielectric 1402 parts is identical with a cylindrical PR1302 with cross sectional dimensions, the center of circle of described cylindrical the second inter-level dielectric 1402 parts is 1 to 10 micron to the minimum range scope at described edge, for example 1 micron, 5 microns or 10 microns; The radius of described cylindrical the second inter-level dielectric 1402 parts is 1 to 10 micron, for example, and 1 micron, 3 microns or 10 microns.
The groove 1401 of present embodiment is not complete cuboid or square, but in groove 1401 near the position of chamfering residual cylindrical the second inter-level dielectric 1402 of part.
Specifically, mainly adopt two kinds of methods to peel off the first photoengraving pattern 1301 and namely remove PR, the first, adopt oxygen (O
2) carrying out dry etching, chemical reaction occurs in oxygen and PR, PR can be removed; The second, also can adopt the wet method ashing method, for example, adopt the mixed solution of sulfuric acid and hydrogen peroxide PR can be removed.In this step, the part of the 2nd PR of coating is present on the second inter-level dielectric 102, in the partially filled groove 1401 in having cylindrical the second inter-level dielectric 1402 of other of the 2nd PR, wraps up described cylindrical the second inter-level dielectric 1402.
In actual applications, under a PR, also be coated with BARC.
Wherein, the second photoengraving pattern 501 is used for defining the A/F of the through hole 601 in the subsequent step.
Present embodiment forms the top-level metallic interconnection layer of through hole 601 again to form first groove 1401 manufacturing process steps describes as example, for the manufacturing process steps that forms first through hole 601 and form the top-level metallic interconnection layer of groove 1401, method of the present invention is applicable equally.
In this step, the method for photoresist lift off can be with reference to description relevant in the step 1104.
In order to prevent that the metallic copper that deposits in the groove 1401 and through hole 601 from falling to diffusing in the first inter-level dielectric 101 and the second inter-level dielectric 102 in subsequent step, adopt physical vapour deposition (PVD) (PVD) process deposits diffusion impervious layer.
Since step 1103 in groove 1401 near the position of chamfering residual cylindrical the second inter-level dielectric 1402 of part, cylindrical the second inter-level dielectric 1402 of intussusception growth metallic copper 901 parcels in this step.
Step 1109, Figure 18 is the cross-sectional view of step 1109 of the metal gasket manufacture method of top-level metallic interconnection layer among the present invention, as shown in figure 18, adopt chemical mechanical milling tech (CMP) that metallic copper 901, copper seed layer and diffusion impervious layer are polished to the surface of the second inter-level dielectric 102 and cylindrical the second inter-level dielectric 1402, form the metal gasket 2001 with cylindrical second inter-level dielectric 1402.
In this step, the metal gasket 2001 that CMP forms is not a complete rectangle or square-shaped metal body, but has cylindrical the second inter-level dielectric 1402 parts in certain corner areas of close the second inter-level dielectric 102 of this metallic object.Experimental results show that, the present invention is in cylindrical the second inter-level dielectric 1402 parts of certain corner areas formation of metal gasket 2001, not only can be the same with slit type inter-level dielectric, reach and offset the technique effect that discharges pressure between metal gasket 2001 and the second inter-level dielectric 102 interfaces, and because the circular hole cross section of cylindrical the second inter-level dielectric 1402 shared area in metal gasket 2001 will much smaller than the area of elongate in shape in the slot form inter-level dielectric, can not introduced risk inaccurate even that lost efficacy to the device testing electrical property on the one hand; On the other hand because cylindrical the second inter-level dielectric 1402 parts are positioned at the corner areas of metal gasket 2001, can barrier metal liner 2001 and the electric connection of below metal wire 902 yet.
So far, the making flow process of top-level metallic interconnection layer of the present invention finishes.
Above-mentioned specific embodiment one as seen, the invention provides a kind of metal gasket manufacture method, the method is used for offsetting and discharging the metal gasket of subsequent step formation and the pressure between the inter-level dielectric interface near the some cylindrical inter-level dielectrics of the regional reservation of the metal gasket of position, edge.For the metal gasket of top-level metallic interconnection layer, the method can not introduced risk inaccurate even that lost efficacy to the device testing electrical property on the one hand, greatly reduces stress in the situation that does not affect device testing electrical property accuracy, improves the reliability of metal gasket; On the other hand because cylindrical the second inter-level dielectric partly is positioned at the corner areas of metal gasket, can the barrier metal liner and the electric connection of below metal wire yet.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of making, is equal to replacement, improvement etc., all should be included within the scope of protection of the invention.
Claims (4)
1. metal gasket manufacture method, be applied to the top-level metallic interconnection layer, the wafer with metal interconnecting layer is provided, deposit successively the first inter-level dielectric and the second inter-level dielectric on the described metal interconnecting layer, form before or after the through hole in described the first inter-level dielectric, the method also comprises:
Described the second inter-level dielectric applies the first photoresist post-exposure and develops and is formed for defining the first photoengraving pattern of metal gasket, and described the first photoengraving pattern keeps at least one cylindrical first photoresist part in the edge of metal gasket;
Described the second inter-level dielectric forms groove take described the first photoengraving pattern as mask etching, and described groove has cylindrical the second inter-level dielectric part closing on the edge;
In described groove after deposit and spread barrier layer and the copper seed layer, the intussusception growth metallic copper;
The described metallic copper of cmp, diffusion impervious layer and copper seed crystal are until expose described second medium layer surface.
2. method according to claim 1 is characterized in that, the edge of described metal gasket has chamfering.
3. method according to claim 2 is characterized in that, described radius is less than described minimum range.
4. described method according to claim 1 is characterized in that, the center of circle of described cylindrical the second inter-level dielectric part is 1 to 10 micron to the minimum range scope at described metal gasket edge; The radius of described cylindrical the second inter-level dielectric part is 1 to 10 micron.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102740558A CN103000569A (en) | 2011-09-15 | 2011-09-15 | Metal liner manufacturing method |
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| CN2011102740558A CN103000569A (en) | 2011-09-15 | 2011-09-15 | Metal liner manufacturing method |
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| CN103000569A true CN103000569A (en) | 2013-03-27 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1327266A (en) * | 2000-06-07 | 2001-12-19 | 三菱电机株式会社 | Semiconductor device and manufacturing method thereof |
| CN1464553A (en) * | 2002-06-14 | 2003-12-31 | 台湾积体电路制造股份有限公司 | Metal interconnect structure with partial slit and method of manufacturing the same |
| US20040084779A1 (en) * | 2002-10-31 | 2004-05-06 | Taiwan Semiconductor Manufacturing Co. Ltd. | Bonding pad metal layer geometry design |
-
2011
- 2011-09-15 CN CN2011102740558A patent/CN103000569A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1327266A (en) * | 2000-06-07 | 2001-12-19 | 三菱电机株式会社 | Semiconductor device and manufacturing method thereof |
| CN1464553A (en) * | 2002-06-14 | 2003-12-31 | 台湾积体电路制造股份有限公司 | Metal interconnect structure with partial slit and method of manufacturing the same |
| US20040084779A1 (en) * | 2002-10-31 | 2004-05-06 | Taiwan Semiconductor Manufacturing Co. Ltd. | Bonding pad metal layer geometry design |
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Application publication date: 20130327 |