CN102982778A - Driving voltage compensation system for GOA circuit - Google Patents
Driving voltage compensation system for GOA circuit Download PDFInfo
- Publication number
- CN102982778A CN102982778A CN 201210529540 CN201210529540A CN102982778A CN 102982778 A CN102982778 A CN 102982778A CN 201210529540 CN201210529540 CN 201210529540 CN 201210529540 A CN201210529540 A CN 201210529540A CN 102982778 A CN102982778 A CN 102982778A
- Authority
- CN
- China
- Prior art keywords
- voltage
- thin film
- film transistor
- goa circuit
- driving voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 11
- 101000746134 Homo sapiens DNA endonuclease RBBP8 Proteins 0.000 description 6
- 101000969031 Homo sapiens Nuclear protein 1 Proteins 0.000 description 6
- 102100021133 Nuclear protein 1 Human genes 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Landscapes
- Liquid Crystal Display Device Control (AREA)
Abstract
本发明提供了一种用于GOA电路的驱动电压补偿系统。该GOA电路位于一阵列基板内。该系统包括：一温度传感器，设置于所述GOA电路的下方，用以检测所述阵列基板的实时温度，并且将所述实时温度转化为一电压信号；以及一驱动电路，用以接收所述电压信号，并将所述电压信号与一参考电压进行比较，根据比较结果输出一控制信号，藉由所述控制信号来调整所述GOA电路的驱动电压。相比于现有技术，本发明的驱动电压补偿系统将温度传感器放置在玻璃内部，因而不易受外界环境影响，还可检测到能够真实反映GOA电路内的薄膜晶体管的实际温度，进而提供精确的驱动电压补偿。
The invention provides a driving voltage compensation system for a GOA circuit. The GOA circuit is located in an array substrate. The system includes: a temperature sensor, arranged under the GOA circuit, used to detect the real-time temperature of the array substrate, and convert the real-time temperature into a voltage signal; and a driving circuit, used to receive the The voltage signal is compared with a reference voltage, and a control signal is output according to the comparison result, and the driving voltage of the GOA circuit is adjusted by the control signal. Compared with the prior art, the driving voltage compensation system of the present invention places the temperature sensor inside the glass, so it is not easily affected by the external environment, and can also detect the actual temperature that can truly reflect the thin film transistor in the GOA circuit, thereby providing accurate Drive voltage compensation.
Description
技术领域 technical field
本发明涉及薄膜晶体管液晶显示器（TFT-LCD，Thin FilmTransistor Liquid Crystal Display）的GOA（Gate driver On Array，阵列基板行驱动）电路，尤其涉及一种用于该GOA电路的驱动电压补偿系统。The invention relates to a GOA (Gate driver On Array, array substrate row driver) circuit of a thin film transistor liquid crystal display (TFT-LCD, Thin FilmTransistor Liquid Crystal Display), in particular to a driving voltage compensation system for the GOA circuit.
背景技术 Background technique
当前，在TFT-LCD中，每个像素具有一个薄膜晶体管（TFT，Thin Film Transistor），该薄膜晶体管的栅极电性连接至水平方向的扫描线，漏极电性连接至垂直方向的数据线，而源极电性连接至一像素电极。若在水平方向的某一条扫描线施加足够的正电压，会使得该条扫描线上的所有TFT打开，此时该条扫描线对应的像素电极会与垂直方向的数据线连接，而将数据线的视讯信号电压写入像素，从而控制不同液晶的透光度进而达到控制色彩的效果。Currently, in TFT-LCD, each pixel has a thin film transistor (TFT, Thin Film Transistor), the gate of the thin film transistor is electrically connected to the horizontal scanning line, and the drain is electrically connected to the vertical data line , and the source is electrically connected to a pixel electrode. If enough positive voltage is applied to a scanning line in the horizontal direction, all the TFTs on the scanning line will be turned on. At this time, the pixel electrode corresponding to the scanning line will be connected to the data line in the vertical direction, and the data line will be The video signal voltage is written into the pixel, so as to control the light transmittance of different liquid crystals and achieve the effect of color control.
在现有技术中，该驱动电路主要是由液晶面板外黏接IC（Integrated Circuit，集成电路）来完成。相比之下，GOA技术（Gatedriver On Array，阵列基板行驱动）是直接将薄膜晶体管的栅极驱动电路制作在阵列基板上，以代替由外接硅芯片制作的驱动芯片的一种技术。由于GOA电路可直接制作于面板周围，简化了制程工艺，而且还可降低产品成本，提高TFT-LCD面板的集成度，使面板趋向于更加薄型化。In the prior art, the driving circuit is mainly completed by an IC (Integrated Circuit, integrated circuit) bonded to the outside of the liquid crystal panel. In contrast, GOA technology (Gatedriver On Array, array substrate row drive) is a technology that directly manufactures the gate drive circuit of the thin film transistor on the array substrate to replace the driver chip made by an external silicon chip. Since the GOA circuit can be directly fabricated around the panel, the manufacturing process is simplified, the product cost can be reduced, the integration degree of the TFT-LCD panel can be improved, and the panel tends to be thinner.
然而，在GOA电路的实际操作过程中，经常会遇到低温条件，电子迁移率在低温下变小，流经薄膜晶体管的电流较低，致使该薄膜晶体管的充电能力下降。为了解决这一问题，现有技术的一种解决方式是在于，系统外接热敏电阻等温度传感器，利用温度传感器来检测环境温度，并且在环境温度过低时自动将GOA电路的驱动电压抬高，提升薄膜晶体管的充电能力，但是，此方案需外接一个温度传感组件，既增加了成本，又占用了体积。此外，温度传感组件暴露于面板外，易遭受外界环境影响，造成传感器灵敏度降低。再者，温度传感组件检测的是环境温度，并不能准确反映玻璃基板内的GOA电路的TFT的实际温度。However, in the actual operation of the GOA circuit, low temperature conditions are often encountered, and the electron mobility becomes smaller at low temperature, and the current flowing through the thin film transistor is lower, resulting in a decrease in the charging capacity of the thin film transistor. In order to solve this problem, one solution in the prior art is to connect a temperature sensor such as a thermistor externally to the system, use the temperature sensor to detect the ambient temperature, and automatically increase the driving voltage of the GOA circuit when the ambient temperature is too low , to improve the charging capacity of the thin film transistor, but this solution requires an external temperature sensing component, which not only increases the cost, but also occupies a volume. In addition, the temperature sensing component is exposed outside the panel and is easily affected by the external environment, resulting in a decrease in sensor sensitivity. Furthermore, the temperature sensing component detects the ambient temperature, which cannot accurately reflect the actual temperature of the TFT of the GOA circuit in the glass substrate.
有鉴于此，如何设计一种用于GOA电路的温度检测方案，通过准确地检测薄膜晶体管的实际温度，来提供驱动电压补偿，进而保证薄膜晶体管的充电能力不会因温度变化而降低，是业内相关技术人员亟待解决的一项课题。In view of this, how to design a temperature detection scheme for the GOA circuit, by accurately detecting the actual temperature of the thin film transistor, to provide driving voltage compensation, so as to ensure that the charging capacity of the thin film transistor will not be reduced due to temperature changes, is an industry challenge. A problem to be solved urgently by relevant technicians.
发明内容 Contents of the invention
针对现有技术中的用于GOA电路的温度检测方案所存在的上述缺陷，本发明提供了一种新颖的、用于GOA电路的驱动电压补偿系统。Aiming at the above-mentioned defects in the temperature detection scheme for the GOA circuit in the prior art, the present invention provides a novel driving voltage compensation system for the GOA circuit.
依据本发明的一个方面，提供了一种用于GOA电路的驱动电压补偿系统，该GOA电路位于一阵列基板内，其中，该驱动电压补偿系统包括：According to one aspect of the present invention, a driving voltage compensation system for a GOA circuit is provided, the GOA circuit is located in an array substrate, wherein the driving voltage compensation system includes:
一温度传感器，设置于所述GOA电路的下方，用以检测所述阵列基板的实时温度，并且将所述实时温度转化为一电压信号；以及A temperature sensor, arranged below the GOA circuit, is used to detect the real-time temperature of the array substrate, and convert the real-time temperature into a voltage signal; and
一驱动电路，用以接收所述电压信号，并将所述电压信号与一参考电压进行比较，根据比较结果输出一控制信号，藉由所述控制信号来调整所述GOA电路的驱动电压。A driving circuit is used to receive the voltage signal, compare the voltage signal with a reference voltage, output a control signal according to the comparison result, and adjust the driving voltage of the GOA circuit by the control signal.
优选地，该温度传感器包括：一第一薄膜晶体管，所述第一薄膜晶体管的栅极电性连接至所述GOA电路的当前驱动电压，所述第一薄膜晶体管的漏极电性连接至一电源电压；以及一电阻，所述电阻的第一端电性连接至所述第一薄膜晶体管的源极，所述电阻的第二端电性连接至接地端，其中所述电压信号对应于所述电阻两端的电压。Preferably, the temperature sensor includes: a first thin film transistor, the gate of the first thin film transistor is electrically connected to the current driving voltage of the GOA circuit, and the drain of the first thin film transistor is electrically connected to a power supply voltage; and a resistor, the first end of the resistor is electrically connected to the source of the first thin film transistor, and the second end of the resistor is electrically connected to the ground, wherein the voltage signal corresponds to the The voltage across the resistor.
优选地，该驱动电路包括：一比较器，其第一输入端电性连接至所述电阻的第一端，其第二输入端电性连接至所述参考电压，其输出端用以输出所述控制信号；一第二薄膜晶体管，所述第二薄膜晶体管的栅极连接至所述比较器的输出端，所述第二薄膜晶体管的源极电性连接至一第一阈值电压；以及一第三薄膜晶体管，所述第三薄膜晶体管的栅极连接至所述比较器的输出端，所述第三薄膜晶体管的源极电性连接至一第二阈值电压，所述第二阈值电压小于所述第一阈值电压，其中，藉由该控制信号将该GOA电路的目标驱动电压调整为该第一阈值电压或该第二阈值电压。Preferably, the drive circuit includes: a comparator, the first input end of which is electrically connected to the first end of the resistor, the second input end of which is electrically connected to the reference voltage, and the output end of which is used to output the The control signal; a second thin film transistor, the gate of the second thin film transistor is connected to the output terminal of the comparator, and the source of the second thin film transistor is electrically connected to a first threshold voltage; and a The third thin film transistor, the gate of the third thin film transistor is connected to the output terminal of the comparator, the source of the third thin film transistor is electrically connected to a second threshold voltage, and the second threshold voltage is less than The first threshold voltage, wherein the target driving voltage of the GOA circuit is adjusted to the first threshold voltage or the second threshold voltage by the control signal.
在其中的一实施例中，当所述电压信号大于所述参考电压时，将所述GOA电路的目标驱动电压调整为所述第二阈值电压。In one of the embodiments, when the voltage signal is greater than the reference voltage, the target driving voltage of the GOA circuit is adjusted to the second threshold voltage.
在其中的一实施例中，当所述电压信号小于所述参考电压时，将所述GOA电路的目标驱动电压调整为所述第一阈值电压。In one of the embodiments, when the voltage signal is lower than the reference voltage, the target driving voltage of the GOA circuit is adjusted to the first threshold voltage.
优选地，电阻经由氧化铟锡金属线电性连接至所述第一薄膜晶体管的源极。更优选地，电阻的阻值为10kΩ，且所述氧化铟锡金属线的长宽比为100。此外，该氧化铟锡金属线的线宽为3um，长度为300um，并且采用波浪形方式进行走线。Preferably, the resistor is electrically connected to the source of the first TFT via an ITO metal wire. More preferably, the resistance of the resistor is 10kΩ, and the aspect ratio of the ITO metal wire is 100. In addition, the indium tin oxide metal wire has a line width of 3 um and a length of 300 um, and is routed in a wavy manner.
采用本发明的驱动电压补偿系统，将温度传感器设置于GOA电路的下方，用以检测阵列基板的实时温度，并将该实时温度转化为一电压信号，然后利用驱动电路接收该电压信号，基于该电压信号与一参考电压的比较结果来输出一控制信号，并通过该控制信号来调整GOA电路的驱动电压。相比于现有技术，本发明的驱动电压补偿系统将温度传感器放置在玻璃内部，因而不易受外界环境影响，还可检测到能够真实反映GOA电路内的薄膜晶体管的实际温度，进而提供精确的驱动电压补偿。此外，在玻璃内部空间允许的条件下，可设置薄膜晶体管较大的长宽比，使流经其的电流增大，从而提高温度传感器的分辨率。Using the drive voltage compensation system of the present invention, the temperature sensor is arranged under the GOA circuit to detect the real-time temperature of the array substrate, and convert the real-time temperature into a voltage signal, and then use the drive circuit to receive the voltage signal, based on the The comparison result of the voltage signal and a reference voltage is used to output a control signal, and the driving voltage of the GOA circuit is adjusted through the control signal. Compared with the prior art, the driving voltage compensation system of the present invention places the temperature sensor inside the glass, so it is not easily affected by the external environment, and can also detect the actual temperature that can truly reflect the thin film transistor in the GOA circuit, thereby providing accurate Drive voltage compensation. In addition, under the condition that the internal space of the glass allows, a larger aspect ratio of the thin film transistor can be set to increase the current flowing through it, thereby improving the resolution of the temperature sensor.
附图说明 Description of drawings
读者在参照附图阅读了本发明的具体实施方式以后，将会更清楚地了解本发明的各个方面。其中，Readers will have a clearer understanding of various aspects of the present invention after reading the detailed description of the present invention with reference to the accompanying drawings. in,
图1示出依据本发明的一实施方式，用于GOA电路的驱动电压补偿系统的结构示意图；FIG. 1 shows a schematic structural diagram of a driving voltage compensation system for a GOA circuit according to an embodiment of the present invention;
图2示出图1的驱动电压补偿系统中的第一阈值电压和第二阈值电压与薄膜晶体管的实际温度的关系曲线图；以及FIG. 2 is a graph showing the relationship between the first threshold voltage and the second threshold voltage and the actual temperature of the thin film transistor in the driving voltage compensation system of FIG. 1; and
图3示出图1的驱动电压补偿系统中的比较器的工作原理示意图。FIG. 3 shows a schematic diagram of the working principle of the comparator in the driving voltage compensation system of FIG. 1 .
具体实施方式 Detailed ways
为了使本申请所揭示的技术内容更加详尽与完备，可参照附图以及本发明的下述各种具体实施例，附图中相同的标记代表相同或相似的组件。然而，本领域的普通技术人员应当理解，下文中所提供的实施例并非用来限制本发明所涵盖的范围。此外，附图仅仅用于示意性地加以说明，并未依照其原尺寸进行绘制。In order to make the technical content disclosed in this application more detailed and complete, reference may be made to the drawings and the following various specific embodiments of the present invention, and the same symbols in the drawings represent the same or similar components. However, those skilled in the art should understand that the examples provided below are not intended to limit the scope of the present invention. In addition, the drawings are only for schematic illustration and are not drawn according to their original scale.
下面参照附图，对本发明各个方面的具体实施方式作进一步的详细描述。The specific implementation manners of various aspects of the present invention will be further described in detail below with reference to the accompanying drawings.
图1示出依据本发明的一实施方式，用于GOA电路的驱动电压补偿系统的结构示意图。图2示出图1的驱动电压补偿系统中的第一阈值电压和第二阈值电压与薄膜晶体管的实际温度的关系曲线图。图3示出图1的驱动电压补偿系统中的工作原理示意图。FIG. 1 shows a schematic structural diagram of a driving voltage compensation system for a GOA circuit according to an embodiment of the present invention. FIG. 2 is a graph showing the relationship between the first threshold voltage and the second threshold voltage and the actual temperature of the thin film transistor in the driving voltage compensation system of FIG. 1 . FIG. 3 shows a schematic diagram of the working principle of the driving voltage compensation system in FIG. 1 .
如前所述，GOA电路位于TFT-LCD的阵列基板（玻璃基板）内，从而简化了制程工艺，降低产品成本，提高TFT-LCD面板的集成度，从而使面板趋向于更加薄型化。参照图1，本发明的驱动电压补偿系统包括一温度传感器10和一驱动电路20。其中，温度传感器10位于阵列基板内，而驱动电路20位于栅极驱动器集成电路内部。实作上，在前段阵列基板制作时，温度传感器10会一起生成，故其无需增加额外的制程。As mentioned above, the GOA circuit is located in the array substrate (glass substrate) of TFT-LCD, which simplifies the manufacturing process, reduces product costs, improves the integration of TFT-LCD panels, and makes the panels tend to be thinner. Referring to FIG. 1 , the driving voltage compensation system of the present invention includes a
具体地，该温度传感器10设置于GOA电路的下方，用以检测阵列基板的实际温度，并且将该实际温度转化为一电压信号。相比于现有技术，由于该温度传感器10放置在诸如玻璃材质的阵列基板内部，不易受外界环境影响，因而，藉由该温度传感器10可检测到能够真实反映GOA电路内的薄膜晶体管的实际温度，以便提供精确的驱动电压补偿。驱动电路20用以接收来自温度传感器10的电压信号，并将该电压信号与一参考电压进行比较，根据比较结果输出一控制信号，然后利用该控制信号来调整GOA电路的驱动电压。Specifically, the
在一实施例中，该温度传感器10包括一第一薄膜晶体管T1和一电阻R。第一薄膜晶体管T1的栅极电性连接至GOA电路的当前驱动电压VGH，第一薄膜晶体管T1的漏极电性连接至一电源电压VDD。电阻R的第一端电性连接至第一薄膜晶体管T1的源极，电阻R的第二端电性连接至接地端。应当理解，当温度变化时，流经第一薄膜晶体管T1的电流也会不尽相同。因此，通过检测电阻R两端所加载的电压Vsensor即可反映该电流的变化，亦即，电阻R两端所加载的电压Vsensor可精确地反映第一薄膜晶体管T1所检测的实际温度。In one embodiment, the
在另一实施例中，在玻璃基板上布局(layout)空间允许的条件下，第一薄膜晶体管T1的长宽比(L/W)比正常GOA电路内部要大10倍以上，确保其导通电流Ion变大，使得温度传感器10的分辨率变大。In another embodiment, under the condition that the layout (layout) space on the glass substrate allows, the aspect ratio (L/W) of the first thin film transistor T1 is more than 10 times larger than that inside the normal GOA circuit to ensure its conduction The larger the current Ion, the larger the resolution of the
进一步，驱动电路20包括一比较器COM1、一第二薄膜晶体管T2和一第三薄膜晶体管T3。例如，比较器COM1的一输入端IN2电性连接至电阻R的第一端，另一输入端IN1电性连接至参考电压Vref，其输出端用以输出该控制信号。在其它的实施例中，比较器COM1的一输入端IN1电性连接至电阻R的第一端，另一输入端IN2电性连接至参考电压Vref，其输出端用以输出该控制信号。Further, the
第二薄膜晶体管T2的栅极连接至比较器COM1的输出端，第二薄膜晶体管T2的源极电性连接至一第一阈值电压VGH-H。第三薄膜晶体管T3的栅极连接至比较器COM1的输出端，第三薄膜晶体管T3的源极电性连接至一第二阈值电压VGH-L，第三薄膜晶体管T3的漏极与第二薄膜晶体管T2的漏极相连接，并输出该GOA的目标驱动电压Vadj。其中，第二阈值电压VGH-L小于第一阈值电压VGH-H。在此，第二薄膜晶体管T2与第三薄膜晶体管T3为互补型。例如，当控制信号为一电平时，GOA电路的目标驱动电压为该第一阈值电压VGH-H；当控制信号为另一电平时，GOA电路的目标驱动电压为该第二阈值电压VGH-L。The gate of the second thin film transistor T2 is connected to the output terminal of the comparator COM1 , and the source of the second thin film transistor T2 is electrically connected to a first threshold voltage VGH-H. The gate of the third thin film transistor T3 is connected to the output terminal of the comparator COM1, the source of the third thin film transistor T3 is electrically connected to a second threshold voltage VGH-L, the drain of the third thin film transistor T3 is connected to the second thin film transistor T3 The drains of the transistor T2 are connected to each other, and output the target driving voltage Vadj of the GOA. Wherein, the second threshold voltage VGH-L is smaller than the first threshold voltage VGH-H. Here, the second thin film transistor T2 and the third thin film transistor T3 are complementary types. For example, when the control signal is at one level, the target driving voltage of the GOA circuit is the first threshold voltage VGH-H; when the control signal is at another level, the target driving voltage of the GOA circuit is the second threshold voltage VGH-L .
在一具体实施例中，当电压信号Vsensor大于参考电压Vref时，将GOA电路的目标驱动电压Vadj调整为第二阈值电压VGH-L。当电压信号Vsensor小于参考电压Vref时，将GOA电路的目标驱动电压Vadj调整为第一阈值电压VGH-H，如图3所示。In a specific embodiment, when the voltage signal Vsensor is greater than the reference voltage Vref, the target driving voltage Vadj of the GOA circuit is adjusted to the second threshold voltage VGH-L. When the voltage signal Vsensor is smaller than the reference voltage Vref, the target driving voltage Vadj of the GOA circuit is adjusted to the first threshold voltage VGH-H, as shown in FIG. 3 .
在一具体实施例中，电阻R经由氧化铟锡（ITO）金属线电性连接至第一薄膜晶体管T1的源极。较佳地，电阻R的阻值为10kΩ，且氧化铟锡金属线的长宽比(L/W)为100。例如，氧化铟锡金属线的线宽为3um，长度为300um，且采用波浪形（或称为蛇形）方式进行走线，以减小走线空间或布局(layout)面积。In a specific embodiment, the resistor R is electrically connected to the source of the first thin film transistor T1 through an indium tin oxide (ITO) metal wire. Preferably, the resistance of the resistor R is 10 kΩ, and the length-to-width ratio (L/W) of the ITO metal wire is 100. For example, the ITO metal wire has a line width of 3um and a length of 300um, and is routed in a wavy (or serpentine) manner to reduce the routing space or layout area.
参照图2，首先应当指出，本发明旨在解决GOA电路实际操作过程遇到低温条件时，造成流经薄膜晶体管T1的电流较低，致使该薄膜晶体管T1的充电能力下降的问题，因此，该驱动电压补偿系统只需工作于薄膜晶体管T1处于常温或低温时的条件。毕竟，薄膜晶体管T1温度较高时，其目标驱动电压足够使其充电。在图2的关系曲线中，温度TGON对应于驱动电压VGH-H与驱动电压VGH-L的临界温度点。也就是说，当薄膜晶体管T1的实际温度高于温度TGON时，可采用驱动电压VGH-L作为薄膜晶体管T1的目标驱动电压；当薄膜晶体管T1的实际温度低于温度TGON时，为保证其充电能力不受影响，采用高于VGH-L的驱动电压VGH-H作为薄膜晶体管T1的目标驱动电压。不难看出，当薄膜晶体管T1处于临界温度TGON时，可测得电阻R两端的电压Vsensor，并将该电压Vsensor作为比较器COM1所接收的该参考电压Vref，以作为目标驱动电压的切换判断条件。Referring to Fig. 2, it should be pointed out first that the present invention aims to solve the problem that the current flowing through the thin film transistor T1 is low when the GOA circuit encounters low temperature conditions during the actual operation process, resulting in a decrease in the charging capacity of the thin film transistor T1. Therefore, the The driving voltage compensation system only needs to work under the condition that the thin film transistor T1 is at normal temperature or low temperature. After all, when the temperature of the thin film transistor T1 is high, its target driving voltage is sufficient to charge it. In the relationship curve of FIG. 2 , the temperature T GON corresponds to the critical temperature point of the driving voltage VGH-H and the driving voltage VGH-L. That is to say, when the actual temperature of the thin film transistor T1 is higher than the temperature T GON , the driving voltage VGH-L can be used as the target driving voltage of the thin film transistor T1; when the actual temperature of the thin film transistor T1 is lower than the temperature T GON , to ensure Its charging capability is not affected, and a driving voltage VGH-H higher than VGH-L is used as the target driving voltage of the thin film transistor T1. It is not difficult to see that when the thin film transistor T1 is at the critical temperature T GON , the voltage Vsensor across the resistor R can be measured, and the voltage Vsensor can be used as the reference voltage Vref received by the comparator COM1 to determine the switching of the target driving voltage. condition.
采用本发明的驱动电压补偿系统，将温度传感器设置于GOA电路的下方，用以检测阵列基板的实时温度，并将该实时温度转化为一电压信号，然后利用驱动电路接收该电压信号，基于该电压信号与一参考电压的比较结果来输出一控制信号，并通过该控制信号来调整GOA电路的驱动电压。相比于现有技术，本发明的驱动电压补偿系统将温度传感器放置在玻璃内部，因而不易受外界环境影响，还可检测到能够真实反映GOA电路内的薄膜晶体管的实际温度，进而提供精确的驱动电压补偿。此外，在玻璃内部空间允许的条件下，可设置薄膜晶体管较大的长宽比，使流经其的电流增大，从而提高温度传感器的分辨率。Using the drive voltage compensation system of the present invention, the temperature sensor is arranged under the GOA circuit to detect the real-time temperature of the array substrate, and convert the real-time temperature into a voltage signal, and then use the drive circuit to receive the voltage signal, based on the The comparison result of the voltage signal and a reference voltage is used to output a control signal, and the driving voltage of the GOA circuit is adjusted through the control signal. Compared with the prior art, the driving voltage compensation system of the present invention places the temperature sensor inside the glass, so it is not easily affected by the external environment, and can also detect the actual temperature that can truly reflect the thin film transistor in the GOA circuit, thereby providing accurate Drive voltage compensation. In addition, under the condition that the internal space of the glass allows, a larger aspect ratio of the thin film transistor can be set to increase the current flowing through it, thereby improving the resolution of the temperature sensor.
前述方式的优点在于无需外界温度传感器，直接在玻璃上布局，集成电路的功能不需要太复杂，且温度感应组件放置于玻璃内部，不易受外界湿气等影响，而且感应到的温度能真实的反应GOA中薄膜晶体管的实际温度，从而做正确的补偿。The advantage of the aforementioned method is that no external temperature sensor is needed, and the layout is directly on the glass. The function of the integrated circuit does not need to be too complicated, and the temperature sensing component is placed inside the glass, which is not easily affected by external moisture, etc., and the sensed temperature can be real. Reflect the actual temperature of the thin film transistor in the GOA, so as to make correct compensation.
上文中，参照附图描述了本发明的具体实施方式。但是，本领域中的普通技术人员能够理解，在不偏离本发明的精神和范围的情况下，还可以对本发明的具体实施方式作各种变更和替换。这些变更和替换都落在本发明权利要求书所限定的范围内。Hereinbefore, specific embodiments of the present invention have been described with reference to the accompanying drawings. However, those skilled in the art can understand that without departing from the spirit and scope of the present invention, various changes and substitutions can be made to the specific embodiments of the present invention. These changes and substitutions all fall within the scope defined by the claims of the present invention.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210529540 CN102982778A (en) | 2012-12-11 | 2012-12-11 | Driving voltage compensation system for GOA circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210529540 CN102982778A (en) | 2012-12-11 | 2012-12-11 | Driving voltage compensation system for GOA circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102982778A true CN102982778A (en) | 2013-03-20 |
Family
ID=47856691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201210529540 Pending CN102982778A (en) | 2012-12-11 | 2012-12-11 | Driving voltage compensation system for GOA circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102982778A (en) |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104102033A (en) * | 2014-07-14 | 2014-10-15 | 上海中航光电子有限公司 | Array substrate, display panel and display device |
| CN105099189A (en) * | 2015-07-17 | 2015-11-25 | 深圳市华星光电技术有限公司 | Voltage compensation circuit and voltage compensation method based on voltage compensation circuit |
| CN105321453A (en) * | 2015-12-01 | 2016-02-10 | 武汉华星光电技术有限公司 | Display panel and display device |
| CN105390112A (en) * | 2015-12-14 | 2016-03-09 | 深圳市华星光电技术有限公司 | Thin film transistor gate voltage supply circuit |
| CN106128386A (en) * | 2016-08-26 | 2016-11-16 | 深圳市华星光电技术有限公司 | A kind of chip protection circuit and flat panel display equipment |
| CN106356031A (en) * | 2016-10-10 | 2017-01-25 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display device and control method of GOA (gate on array) circuit of liquid crystal display device |
| CN106782408A (en) * | 2017-02-16 | 2017-05-31 | 京东方科技集团股份有限公司 | Display panel, GOA circuits and its driving force adjusting means |
| WO2017190532A1 (en) * | 2016-05-06 | 2017-11-09 | 京东方科技集团股份有限公司 | Temperature compensation circuit, display panel and temperature compensation method |
| CN108665843A (en) * | 2018-05-14 | 2018-10-16 | 云谷（固安）科技有限公司 | Display base plate and its display device |
| WO2018192510A1 (en) * | 2017-04-21 | 2018-10-25 | 京东方科技集团股份有限公司 | Electroluminescent display panel, driving method and driving device thereof, and display device |
| CN109377955A (en) * | 2018-11-23 | 2019-02-22 | 维沃移动通信有限公司 | A pixel circuit control method, display panel and terminal device |
| CN109473076A (en) * | 2018-12-17 | 2019-03-15 | 深圳市华星光电半导体显示技术有限公司 | A kind of the driving voltage compensation device and method of GOA circuit |
| CN109616065A (en) * | 2018-12-29 | 2019-04-12 | 武汉华星光电技术有限公司 | The display methods of display panel |
| CN110097859A (en) * | 2019-04-10 | 2019-08-06 | 武汉华星光电半导体显示技术有限公司 | A kind of display panel and display device |
| CN110148390A (en) * | 2019-06-24 | 2019-08-20 | 京东方科技集团股份有限公司 | Array substrate, its driving method and display device |
| CN110660358A (en) * | 2019-09-17 | 2020-01-07 | 昆山龙腾光电股份有限公司 | Display device and driving compensation method thereof |
| CN110796993A (en) * | 2019-11-15 | 2020-02-14 | 福州京东方光电科技有限公司 | Voltage compensation circuit and display device |
| CN112997239A (en) * | 2019-08-12 | 2021-06-18 | 京东方科技集团股份有限公司 | Gate driving method, gate driving circuit and display device |
| CN113012654A (en) * | 2021-03-03 | 2021-06-22 | 昆山龙腾光电股份有限公司 | Grid driving power supply management system and display device |
| CN113077736A (en) * | 2021-03-19 | 2021-07-06 | Tcl华星光电技术有限公司 | Control circuit, display device, and electronic apparatus |
| CN116343700A (en) * | 2023-03-17 | 2023-06-27 | 惠科股份有限公司 | Array substrate and driving method thereof |
| CN117198241A (en) * | 2023-09-08 | 2023-12-08 | 惠科股份有限公司 | Driving voltage compensation circuit and display panel |
| TWI889264B (en) * | 2024-03-27 | 2025-07-01 | 友達光電股份有限公司 | Driving system of an in-cell touch panel and control method for a driving circuit of the in-cell touch panel |
-
2012
- 2012-12-11 CN CN 201210529540 patent/CN102982778A/en active Pending
Cited By (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104102033A (en) * | 2014-07-14 | 2014-10-15 | 上海中航光电子有限公司 | Array substrate, display panel and display device |
| CN104102033B (en) * | 2014-07-14 | 2017-05-17 | 上海中航光电子有限公司 | Array substrate, display panel and display device |
| CN105099189A (en) * | 2015-07-17 | 2015-11-25 | 深圳市华星光电技术有限公司 | Voltage compensation circuit and voltage compensation method based on voltage compensation circuit |
| WO2017012140A1 (en) * | 2015-07-17 | 2017-01-26 | 深圳市华星光电技术有限公司 | Voltage compensation circuit and voltage compensation method based thereon |
| CN105099189B (en) * | 2015-07-17 | 2017-09-12 | 深圳市华星光电技术有限公司 | A kind of voltage compensating circuit and the voltage compensating method based on voltage compensating circuit |
| CN105321453A (en) * | 2015-12-01 | 2016-02-10 | 武汉华星光电技术有限公司 | Display panel and display device |
| CN105390112B (en) * | 2015-12-14 | 2018-04-03 | 深圳市华星光电技术有限公司 | Thin-film transistor gate voltage supply circuit |
| CN105390112A (en) * | 2015-12-14 | 2016-03-09 | 深圳市华星光电技术有限公司 | Thin film transistor gate voltage supply circuit |
| US9960761B2 (en) | 2015-12-14 | 2018-05-01 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Thin film transistor gate voltage supply circuit |
| WO2017101181A1 (en) * | 2015-12-14 | 2017-06-22 | 深圳市华星光电技术有限公司 | Thin-film transistor gate voltage supply circuit |
| US10204588B2 (en) | 2016-05-06 | 2019-02-12 | Boe Technology Group Co., Ltd. | Temperature compensation circuit, display panel and temperature compensation method |
| WO2017190532A1 (en) * | 2016-05-06 | 2017-11-09 | 京东方科技集团股份有限公司 | Temperature compensation circuit, display panel and temperature compensation method |
| CN106128386A (en) * | 2016-08-26 | 2016-11-16 | 深圳市华星光电技术有限公司 | A kind of chip protection circuit and flat panel display equipment |
| CN106356031A (en) * | 2016-10-10 | 2017-01-25 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display device and control method of GOA (gate on array) circuit of liquid crystal display device |
| CN106356031B (en) * | 2016-10-10 | 2019-04-05 | 南京中电熊猫液晶显示科技有限公司 | The control method of liquid crystal display device and its GOA circuit |
| CN106782408A (en) * | 2017-02-16 | 2017-05-31 | 京东方科技集团股份有限公司 | Display panel, GOA circuits and its driving force adjusting means |
| CN106782408B (en) * | 2017-02-16 | 2019-10-15 | 京东方科技集团股份有限公司 | Display panel, GOA circuit and its driving ability adjusting device |
| US10930206B2 (en) | 2017-04-21 | 2021-02-23 | Boe Technology Group Co., Ltd. | Electroluminescent display panel, driving method thereof, driving device and display device |
| WO2018192510A1 (en) * | 2017-04-21 | 2018-10-25 | 京东方科技集团股份有限公司 | Electroluminescent display panel, driving method and driving device thereof, and display device |
| CN108665843A (en) * | 2018-05-14 | 2018-10-16 | 云谷（固安）科技有限公司 | Display base plate and its display device |
| CN109377955A (en) * | 2018-11-23 | 2019-02-22 | 维沃移动通信有限公司 | A pixel circuit control method, display panel and terminal device |
| WO2020124811A1 (en) * | 2018-12-17 | 2020-06-25 | 深圳市华星光电半导体显示技术有限公司 | Device and method for compensating driving voltage of goa circuit |
| CN109473076A (en) * | 2018-12-17 | 2019-03-15 | 深圳市华星光电半导体显示技术有限公司 | A kind of the driving voltage compensation device and method of GOA circuit |
| CN109616065A (en) * | 2018-12-29 | 2019-04-12 | 武汉华星光电技术有限公司 | The display methods of display panel |
| US10896651B2 (en) | 2018-12-29 | 2021-01-19 | Wuhan China Star Oproelectronics Technology Co., Ltd. | Method for displaying a display panel |
| WO2020133843A1 (en) * | 2018-12-29 | 2020-07-02 | 武汉华星光电技术有限公司 | Display method for display panel |
| US11257451B2 (en) | 2019-04-10 | 2022-02-22 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel and display device |
| WO2020206770A1 (en) * | 2019-04-10 | 2020-10-15 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN110097859A (en) * | 2019-04-10 | 2019-08-06 | 武汉华星光电半导体显示技术有限公司 | A kind of display panel and display device |
| CN110148390B (en) * | 2019-06-24 | 2021-12-03 | 京东方科技集团股份有限公司 | Array substrate, driving method thereof and display device |
| CN110148390A (en) * | 2019-06-24 | 2019-08-20 | 京东方科技集团股份有限公司 | Array substrate, its driving method and display device |
| CN112997239A (en) * | 2019-08-12 | 2021-06-18 | 京东方科技集团股份有限公司 | Gate driving method, gate driving circuit and display device |
| CN112997239B (en) * | 2019-08-12 | 2023-04-18 | 京东方科技集团股份有限公司 | Gate driving method, gate driving circuit and display device |
| CN110660358B (en) * | 2019-09-17 | 2021-09-14 | 昆山龙腾光电股份有限公司 | Display device and driving compensation method thereof |
| CN110660358A (en) * | 2019-09-17 | 2020-01-07 | 昆山龙腾光电股份有限公司 | Display device and driving compensation method thereof |
| CN110796993A (en) * | 2019-11-15 | 2020-02-14 | 福州京东方光电科技有限公司 | Voltage compensation circuit and display device |
| CN110796993B (en) * | 2019-11-15 | 2022-03-08 | 福州京东方光电科技有限公司 | Voltage compensation circuit and display device |
| CN113012654A (en) * | 2021-03-03 | 2021-06-22 | 昆山龙腾光电股份有限公司 | Grid driving power supply management system and display device |
| CN113077736A (en) * | 2021-03-19 | 2021-07-06 | Tcl华星光电技术有限公司 | Control circuit, display device, and electronic apparatus |
| CN116343700A (en) * | 2023-03-17 | 2023-06-27 | 惠科股份有限公司 | Array substrate and driving method thereof |
| CN117198241A (en) * | 2023-09-08 | 2023-12-08 | 惠科股份有限公司 | Driving voltage compensation circuit and display panel |
| CN117198241B (en) * | 2023-09-08 | 2024-08-02 | 惠科股份有限公司 | Driving voltage compensation circuit and display panel |
| TWI889264B (en) * | 2024-03-27 | 2025-07-01 | 友達光電股份有限公司 | Driving system of an in-cell touch panel and control method for a driving circuit of the in-cell touch panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102982778A (en) | Driving voltage compensation system for GOA circuit | |
| US11928994B2 (en) | Display device with crack detection circuitry and manufacturing method thereof | |
| KR101133753B1 (en) | Liquid crystal display including sensing element | |
| TWI628574B (en) | Touch-type display panel and short-repair method thereof | |
| CN102103843B (en) | Liquid crystal display device and method for automatically controlling brightness | |
| TWI402591B (en) | Active matrix display apparatus with touch sense function | |
| CN102033348B (en) | Liquid crystal display device | |
| CN103971639B (en) | Pixel-driving circuit and driving method, array base palte and display device | |
| US20080123005A1 (en) | Array Substrate and Display Panel Having the Same | |
| CN104596659B (en) | Temperature sensing circuit of display, display and operation method thereof | |
| US20080055268A1 (en) | Touch screen panel and method for manufacturing the same | |
| US9298055B2 (en) | Array substrate, method of disconnection inspecting gate lead wire and source lead wire in the array substrate, method of inspecting the array substrate, and liquid crystal display device | |
| CN103903578A (en) | Display device capable of detecting bonding defects | |
| JP5570679B2 (en) | Touch panel device | |
| WO2021134849A1 (en) | Voltage compensation method for pixel driving circuit, and voltage compensation circuit and display panel | |
| TW201316237A (en) | Display device and display system | |
| CN104516144B (en) | The capacitance detecting device and its detection method of a kind of touch sensing | |
| WO2017197920A1 (en) | Pixel circuit and drive method therefor, substrate, display panel and electronic device | |
| WO2011152208A1 (en) | Ion sensor and display device | |
| KR101269001B1 (en) | Inspecting method of Electrophoretic display device | |
| JP3963983B2 (en) | TFT substrate inspection method, inspection apparatus, and control method of inspection apparatus | |
| JP3698365B2 (en) | Array substrate inspection apparatus and inspection method | |
| CN110476201A (en) | Display device | |
| US20110157099A1 (en) | Liquid Crystal Display Panel and the Inspection Method thereof | |
| TWI445177B (en) | Memory array and display system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130320 |