CN102956792B - Light emitting diode packaging structure - Google Patents
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- CN102956792B CN102956792B CN201110250437.7A CN201110250437A CN102956792B CN 102956792 B CN102956792 B CN 102956792B CN 201110250437 A CN201110250437 A CN 201110250437A CN 102956792 B CN102956792 B CN 102956792B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 36
- 238000000149 argon plasma sintering Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000002245 particle Substances 0.000 claims abstract description 20
- 230000002093 peripheral effect Effects 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 239000008187 granular material Substances 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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Abstract
一种发光二极管封装结构,包括基板、电极、发光二极管芯片和封装体。所述电极形成于基板表面,所述发光二极管芯片位于基板上,并与所述电极电性连接。该封装体覆盖所述基板并包覆所述发光二极管芯片于其内部。该封装体包含一本体及环绕该本体的一光散射区域。该本体包括与基板贴设的结合面及与结合面相对的出光面。该光散射区域由在部分本体内掺杂散射粒子形成,该光散射区域围绕所述发光二极管芯片设置。
A light-emitting diode package structure, including a substrate, electrodes, light-emitting diode chips and a package body. The electrodes are formed on the surface of the substrate, and the LED chips are located on the substrate and electrically connected with the electrodes. The packaging body covers the substrate and wraps the LED chip inside. The package includes a body and a light scattering area surrounding the body. The body includes a bonding surface attached to the substrate and a light-emitting surface opposite to the bonding surface. The light scattering area is formed by doping scattering particles in part of the body, and the light scattering area is arranged around the LED chip.
Description
技术领域 technical field
本发明涉及半导体结构,尤其涉及一种发光二极管封装结构。 The invention relates to a semiconductor structure, in particular to a light emitting diode packaging structure.
背景技术 Background technique
一般将发光二极管(Light Emitting Diode, LED)封装结构用于作为直下式背光模组的光源时,通常要求其具有宽光场的出光,以减少显示屏上的光点和亮暗带的产生。如图1所示为一种产生宽光场的发光二极管封装结构100,在该发光二极管封装结构100的上部出光面形成有一V型的透镜102,该透镜102将发光二极管芯片103出射的部分光线折射向该发光二极管封装结构100的四周,从而产生较宽的光场。但是由于该发光二极管封装结构100的上部还形成有透镜102,使得其厚度和体积较大,而且制作成本也较高。 Generally, when a light-emitting diode (Light Emitting Diode, LED) package structure is used as a light source for a direct-lit backlight module, it is usually required to have a wide light field to reduce the generation of light spots and bright and dark bands on the display. As shown in FIG. 1, a light-emitting diode packaging structure 100 that produces a wide light field is formed. A V-shaped lens 102 is formed on the light-emitting surface of the upper part of the light-emitting diode packaging structure 100. The lens 102 emits part of the light emitted by the light-emitting diode chip 103. The light is refracted to the surroundings of the LED packaging structure 100, thereby generating a wider light field. However, since the lens 102 is formed on the upper part of the light emitting diode packaging structure 100, its thickness and volume are relatively large, and its manufacturing cost is also relatively high.
发明内容 Contents of the invention
有鉴于此,有必要提供一种低成本且轻薄的具有宽光场的发光二极管封装结构。 In view of this, it is necessary to provide a low-cost and light-weight LED packaging structure with a wide light field.
一种发光二极管封装结构,包括基板、电极、发光二极管芯片和封装体。所述电极形成于基板表面,所述发光二极管芯片位于基板上,并与所述电极电性连接。该封装体覆盖所述基板并包覆所述发光二极管芯片于其内部。该封装体包含一本体及环绕该本体的一光散射区域。该本体包括与基板贴设的结合面及与结合面相对的出光面。该光散射区域由在部分本体内掺杂散射粒子形成,该光散射区域围绕所述发光二极管芯片设置。 A light-emitting diode package structure, including a substrate, electrodes, light-emitting diode chips and a package body. The electrodes are formed on the surface of the substrate, and the LED chips are located on the substrate and electrically connected with the electrodes. The packaging body covers the substrate and wraps the LED chip inside. The package includes a body and a light scattering area surrounding the body. The body includes a bonding surface attached to the substrate and a light-emitting surface opposite to the bonding surface. The light scattering area is formed by doping scattering particles in part of the body, and the light scattering area is arranged around the LED chip.
上述发光二极管封装结构中,封装体包含一个光散射区域于该封装体周围,该光散射区域内掺杂有较高浓度的散射粒子,从而能够增加光线的散射,增加侧向出光,提升该发光二极管封装结构的光场范围,同时这种光散射区域是通过在封装体内掺杂散射粒子形成,因此不会增大该发光二极管封装结构的厚度和体积,制作成本也较低,从而使得该发光二极管封装结构在增加侧向出光的同时还能够满足低成本且轻薄的要求。 In the above light-emitting diode packaging structure, the package body includes a light scattering area around the package body, and the light scattering area is doped with a relatively high concentration of scattering particles, so as to increase the scattering of light, increase the side light emission, and improve the luminescence. The light field range of the diode packaging structure, and the light scattering area is formed by doping scattering particles in the packaging body, so the thickness and volume of the light emitting diode packaging structure will not be increased, and the manufacturing cost is also low, so that the light emitting The diode packaging structure can meet the requirements of low cost and thinness while increasing side light emission.
附图说明 Description of drawings
图1是现有技术中的一种发光二极管封装结构示意图。 FIG. 1 is a schematic diagram of a light emitting diode package structure in the prior art.
图2是本发明第一实施方式提供的一种发光二极管封装结构示意图。 Fig. 2 is a schematic diagram of a package structure of a light emitting diode provided in the first embodiment of the present invention.
图3是图2所示发光二极管封装结构的俯视图。 FIG. 3 is a top view of the LED packaging structure shown in FIG. 2 .
图4是图2所示发光二极管封装结构的配光曲线图。 FIG. 4 is a light distribution curve diagram of the LED package structure shown in FIG. 2 .
图5是本发明第二实施方式提供的一种发光二极管封装结构示意图。 Fig. 5 is a schematic diagram of a light emitting diode package structure provided by the second embodiment of the present invention.
图6是本发明第三实施方式提供的一种发光二极管封装结构示意图。 Fig. 6 is a schematic diagram of a package structure of a light emitting diode provided in the third embodiment of the present invention.
主要元件符号说明 Description of main component symbols
如下具体实施方式将结合上述附图进一步说明本发明。 The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.
具体实施方式 Detailed ways
请参阅图2和图3,本发明的一实施方式提供一种发光二极管封装结构10,其包括基板11、电极12、发光二极管芯片13和封装体14。 Referring to FIG. 2 and FIG. 3 , an embodiment of the present invention provides a LED package structure 10 , which includes a substrate 11 , electrodes 12 , LED chips 13 and a package body 14 .
基板11为一矩形平板,用以承载所述电极12、发光二极管芯片13和封装体14于其上表面上。所述基板11包括上表面111和与上表面111相对且相互平行的下表面112。所述基板11材料为PPA(Polyphthalamide,聚醋酸乙烯酯)等。可以理解的,所述基板11各边的长度可以相同或不同,进一步的,所述基板11的形状并不限于矩形,其形状还可以为圆形等。 The substrate 11 is a rectangular flat plate for carrying the electrodes 12 , LED chips 13 and packages 14 on its upper surface. The substrate 11 includes an upper surface 111 and a lower surface 112 opposite to the upper surface 111 and parallel to each other. The material of the substrate 11 is PPA (Polyphthalamide, polyvinyl acetate) or the like. It can be understood that the lengths of the sides of the substrate 11 may be the same or different. Further, the shape of the substrate 11 is not limited to a rectangle, and may also be a circle or the like.
电极12形成于所述基板11的表面,该电极12至少为两个,且每个电极12之间相互电绝缘。所述电极12分别自所述基板11的上表面111延伸至下表面112。所述电极12所用的材料为导电性能较好的金属材料,如金、银、铜、铂、铝、镍、锡或镁中的一种或几种的合金。 There are at least two electrodes 12 formed on the surface of the substrate 11 , and each electrode 12 is electrically insulated from each other. The electrodes 12 respectively extend from the upper surface 111 to the lower surface 112 of the substrate 11 . The material used for the electrode 12 is a metal material with good electrical conductivity, such as one or more alloys of gold, silver, copper, platinum, aluminum, nickel, tin or magnesium.
发光二极管芯片13贴设于其中一个所述电极12上。所述发光二极管芯片13通过金属导线131与所述电极12分别电性连接。可以理解的,该发光二极管芯片13也可以采用覆晶的方式固定于基板11表面的电极12上并与所述电极12电连接。 The LED chip 13 is pasted on one of the electrodes 12 . The LED chips 13 are electrically connected to the electrodes 12 through metal wires 131 . It can be understood that the light emitting diode chip 13 can also be fixed on the electrode 12 on the surface of the substrate 11 in a flip-chip manner and electrically connected to the electrode 12 .
封装体14形成于所述基板11的上表面111上,覆盖所述电极12位于所述上表面111的部分,并包覆所述发光二极管芯片13和金属导线131。所述封装体14可以为透镜,也可以为封装胶。该封装体14包括覆盖所述发光二极管芯片13的本体141及位于本体141远离发光二极管芯片13的一侧周缘部分的光散射区域142。该本体141大致呈半球体状,包括弧形的上出光面1411和与基板11的上表面相互贴设的结合面1412。该光散射区域142包括位于上出光面1411周缘部分的环形光扩散面1421及从光扩散面1421的外周缘向下垂直延伸至与基板11垂直连接的侧出光面1422。所述光散射区域142覆盖于该本体141的外周缘部分。所述光散射区域142呈环状。所述光散射区域142对应所述发光二极管芯片13的出光角度的周缘部分。本实施例中,该光散射区域142对应所述发光二极管芯片13的出光角度的45°到90°之间的范围。该光散射区域142的厚度自所述光扩散面1421与上出光面1411的连接处分别向所述光扩散面1421与所述侧出光面1422的连接处逐渐增加。该光散射区域142由散射粒子143掺杂于封装体14内形成,其中,该光散射区域142内散射粒子143的掺杂浓度高于所述本体141内的散射粒子143的掺杂浓度,所述散射粒子143为二氧化钛颗粒或氧化硅颗粒中的任意一种。所述封装体14内还可以包含荧光转换材料,该萤光转换材料可以为石榴石基荧光粉、硅酸盐基荧光粉、原硅酸盐基荧光粉、硫化物基荧光粉、硫代镓酸盐基荧光粉和氮化物基荧光粉。 The package body 14 is formed on the upper surface 111 of the substrate 11 , covers the portion of the electrode 12 located on the upper surface 111 , and wraps the LED chip 13 and the metal wire 131 . The package body 14 may be a lens, or an encapsulant. The package body 14 includes a body 141 covering the LED chip 13 and a light scattering area 142 located on a peripheral portion of the body 141 away from the LED chip 13 . The main body 141 is approximately hemispherical and includes an arc-shaped upper light-emitting surface 1411 and a bonding surface 1412 attached to the upper surface of the substrate 11 . The light scattering area 142 includes an annular light diffusing surface 1421 located at the peripheral portion of the upper light emitting surface 1411 and a side light emitting surface 1422 vertically extending downward from the outer periphery of the light diffusing surface 1421 to vertically connecting with the substrate 11 . The light scattering area 142 covers the outer peripheral portion of the main body 141 . The light scattering area 142 is ring-shaped. The light scattering area 142 corresponds to a peripheral portion of the light emitting angle of the LED chip 13 . In this embodiment, the light scattering area 142 corresponds to a range between 45° and 90° of the light emitting angle of the LED chip 13 . The thickness of the light scattering region 142 gradually increases from the connection between the light diffusion surface 1421 and the upper light emitting surface 1411 to the connection between the light diffusing surface 1421 and the side light emitting surface 1422 . The light scattering region 142 is formed by doping scattering particles 143 into the package body 14, wherein the doping concentration of the scattering particles 143 in the light scattering region 142 is higher than the doping concentration of the scattering particles 143 in the body 141, so The scattering particles 143 are any one of titanium dioxide particles or silicon oxide particles. The package body 14 may also contain a fluorescent conversion material, and the fluorescent conversion material may be garnet-based phosphor, silicate-based phosphor, orthosilicate-based phosphor, sulfide-based phosphor, thiogallium Salt-based phosphors and nitride-based phosphors.
该发光二极管封装结构10工作时,发光二极管芯片13发出光线,如图2中的箭头所示,位于该发光二极管芯片13出光角度内的中央部分的光线穿射本体141后从上出光面1411射出,位于发光二极管芯片13的出光角度内的周围部分的光线穿透本体141后射向光散射区域142,由于该光散射区域142内掺杂有高浓度的散射粒子143,光线被光散射区域142内的散射粒子143折射后大部分从侧出光面1422射出,从而增加该发光二极管封装结构10的照射范围,形成宽光场。请参阅图4,为本发明上述实施方式提供的发光二极管封装结构10的配光曲线图,由于该发光二极管封装结构10上形成有上述光散射区域142,从图中可以看出该发光二极管封装结构10向两侧的方向的出光更强,增加了侧向出光,从而提升该发光二极管封装结构10的光场范围。 When the light emitting diode package structure 10 is in operation, the light emitting diode chip 13 emits light, as shown by the arrow in FIG. , the light in the surrounding part within the light emitting angle of the light emitting diode chip 13 penetrates the body 141 and then shoots to the light scattering region 142. Since the light scattering region 142 is doped with a high concentration of scattering particles 143, the light is scattered by the light scattering region 142 Most of the scattering particles 143 inside are refracted and emitted from the side light emitting surface 1422, thereby increasing the irradiation range of the light emitting diode packaging structure 10 and forming a wide light field. Please refer to FIG. 4 , which is a light distribution curve diagram of the light emitting diode package structure 10 provided by the above-mentioned embodiment of the present invention. Since the above-mentioned light scattering region 142 is formed on the light emitting diode package structure 10 , it can be seen from the figure that the light emitting diode package The structure 10 emits stronger light toward both sides, which increases the lateral light emission, thereby improving the light field range of the light emitting diode packaging structure 10 .
请参阅图5,为本发明的第二实施例所提供的发光二极管封装结构20,其与第一实施例的发光二极管封装结构10的区别在于:该发光二极管封装结构20的封装体24内不掺杂散射粒子143。 Please refer to FIG. 5 , the light emitting diode packaging structure 20 provided by the second embodiment of the present invention differs from the light emitting diode packaging structure 10 of the first embodiment in that: the packaging body 24 of the light emitting diode packaging structure 20 does not Scattering particles 143 are doped.
请参阅图6,为本发明的第三实施例所提供的发光二极管封装结构30,其与第一实施例的发光二极管封装结构10的区别在于:该发光二极管封装结构30的光散射区域142位于封装体34内部,介于所述发光二极管芯片13和封装体34的出光面之间。 Please refer to FIG. 6 , the light emitting diode packaging structure 30 provided by the third embodiment of the present invention differs from the light emitting diode packaging structure 10 of the first embodiment in that: the light scattering region 142 of the light emitting diode packaging structure 30 is located The inside of the package body 34 is between the LED chip 13 and the light emitting surface of the package body 34 .
本发明实施方式提供的发光二极管封装结构10,20和30中,封装体14,24和34包含覆盖于该封装体的出光面的周缘部分的光散射区域142,能够增加光线的散射,增加侧向出光,从而提升该发光二极管封装结构10,20和30的光场范围,同时这种发光二极管封装结构10,20和30仅通过在封装体14,24和34内进行掺杂即可达到上述效果,因此不会增大该发光二极管封装结构10,20和30的厚度和体积,制作成本也较低,从而使得该发光二极管封装结构10,20和30在增加侧向出光的同时还能够满足低成本且轻薄的要求。 In the light-emitting diode packaging structures 10, 20 and 30 provided in the embodiments of the present invention, the packages 14, 24 and 34 include a light scattering region 142 covering the peripheral portion of the light-emitting surface of the package, which can increase the scattering of light and increase the side The light emitting diode packaging structure 10, 20 and 30 can be extended to light field, and the light emitting diode packaging structure 10, 20 and 30 can achieve the above-mentioned by doping only in the packaging body 14, 24 and 34. Therefore, the thickness and volume of the light-emitting diode packaging structures 10, 20 and 30 will not be increased, and the manufacturing cost is also low, so that the light-emitting diode packaging structures 10, 20 and 30 can meet the requirements while increasing the side light output. Low cost and thin and light requirements.
可以理解的是,对于本领域的普通技术人员来说,可以根据本发明的技术构思做出其它各种相应的改变与变形,而所有这些改变与变形都应属于本发明权利要求的保护范围。 It can be understood that those skilled in the art can make various other corresponding changes and modifications according to the technical concept of the present invention, and all these changes and modifications should belong to the protection scope of the claims of the present invention.
Claims (9)
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| CN201110250437.7A CN102956792B (en) | 2011-08-29 | 2011-08-29 | Light emitting diode packaging structure |
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| TWI531094B (en) | 2013-05-17 | 2016-04-21 | Daxin Materials Corp | And a light-emitting device for a light-emitting device |
| TWI610470B (en) * | 2016-06-13 | 2018-01-01 | 隆達電子股份有限公司 | Light-emitting diode wafer level package structure, direct-type backlight module and manufacturing method of light-emitting device |
| US10910532B2 (en) * | 2017-12-08 | 2021-02-02 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
| CN111509141B (en) * | 2020-05-06 | 2023-08-01 | 上海天马微电子有限公司 | Display panel, manufacturing method thereof, and display device |
| CN112234134B (en) * | 2020-09-29 | 2025-08-05 | 南昌大学 | A phosphor-free multi-primary color LED packaging structure and packaging method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI239666B (en) * | 2004-09-16 | 2005-09-11 | Chen-Lun Hsingchen | LED package with diode protection circuit |
| TW200903862A (en) * | 2007-06-14 | 2009-01-16 | Cree Inc | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
| CN101487581A (en) * | 2008-01-17 | 2009-07-22 | 富士迈半导体精密工业(上海)有限公司 | LED light source module |
| TW200952210A (en) * | 2008-06-13 | 2009-12-16 | Advanced Optoelectronic Tech | Light emitting diode |
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| CN101567366A (en) * | 2008-04-25 | 2009-10-28 | 展晶科技(深圳)有限公司 | Light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI239666B (en) * | 2004-09-16 | 2005-09-11 | Chen-Lun Hsingchen | LED package with diode protection circuit |
| TW200903862A (en) * | 2007-06-14 | 2009-01-16 | Cree Inc | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
| CN101487581A (en) * | 2008-01-17 | 2009-07-22 | 富士迈半导体精密工业(上海)有限公司 | LED light source module |
| TW200952210A (en) * | 2008-06-13 | 2009-12-16 | Advanced Optoelectronic Tech | Light emitting diode |
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| CN102956792A (en) | 2013-03-06 |
| TW201310726A (en) | 2013-03-01 |
| TWI474521B (en) | 2015-02-21 |
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