CN102914832A - Wafer-level molded optical coupler - Google Patents
Wafer-level molded optical coupler Download PDFInfo
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- CN102914832A CN102914832A CN2011102263506A CN201110226350A CN102914832A CN 102914832 A CN102914832 A CN 102914832A CN 2011102263506 A CN2011102263506 A CN 2011102263506A CN 201110226350 A CN201110226350 A CN 201110226350A CN 102914832 A CN102914832 A CN 102914832A
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Abstract
The invention discloses a wafer-level molded optical coupler. An example packaging part comprises a substrate, a first photoelectric device, a second photoelectric device, and a plurality of electric tracks, wherein the substrate comprises a first surface, a second surface opposite to the first surface, and an electric insulating material main body arranged between the first surface and the second surface; the first photoelectric device is embedded into the electric insulating material main body of the substrate, and arranged between the first surface and the second surface of the substrate; the first photoelectric device comprises a first conductive area and a second conductive area; the second photoelectric device is embedded into the electric insulating material main body, arranged between the first surface and the second surface of the substrate and optically coupled to the first photoelectric device; the second photoelectric device comprises a first conductive area and a second conductive area; the plurality of electric tracks are arranged at one or two surfaces of the substrate and electrically coupled to the conductive areas of the photoelectric devices.
Description
The cross reference of related application
Nothing
Background technology
Photo-coupler comprises the optical transmitting set that is coupled to light receiving element by light transmissive material.This configuration is permitted information and is passed to another circuit that comprises optical receiver from a circuit that comprises optical transmitting set.The electricity isolation that between these two circuit, keeps height.Because information is transmitted with optical mode across the electrical isolation gap, so transmission is unidirectional.For example, optical receiver can not be revised the operation of the circuit that comprises optical transmitting set.This specific character expects that this is because for example, transmitter may be driven by the low voltage circuit that uses microprocessor or logic gate, may be the part of high pressure DC or AC load circuit and export optical receiver.The isolation of this light also prevents the damage that input circuit caused by relatively disadvantageous output circuit, and allows these two circuit to be in different earth potentials.
Summary of the invention
As the part of their invention of creation, the inventor has realized that a large amount of use photo-couplers in circuit for power conversion, and the relative large scale that a plurality of photo-couplers cause in the circuit for power conversion is to make the size of circuit and the obstacle that volume reduces.Or as the part of their invention of creation, the inventor has realized that the cost that needs the reduction photo-coupler and improves their electric property.Aspect of the present invention provides a kind of photo-coupler with the photovalve imbedded in the supporting substrate and one or more ultra-thin interconnection layer, and wherein each interconnection layer provides ultra-thin and extra small optically-coupled packaging part.This structure so that supporting substrate and the element imbedded can enough wafer scale methods of forming and use common forming processes and traditional semiconductor processes is manufactured on together the Multi-instance (instance) of packaging part on the same wafer and makes from same wafer-separate and manufacture process separated from one another after making.This wafer scale manufacture method can be increasingly automated, and this has reduced manufacturing cost significantly.Other aspects of the present invention have reduced manufacturing cost and have improved electric property.
Therefore, relate to optical coupler package spare according to of the present invention first total illustrative embodiments, comprise substrate, have first surface, the second surface relative with first surface and be arranged at first surface and second surface between the electrically insulating material main body; The first photoelectric device is imbedded in the electrically insulating material main body of substrate, and is arranged between the first surface and second surface of substrate, and the first photoelectric device has the first conductive region and the second conductive region; And second photoelectric device, imbed in the electrically insulating material main body of substrate, and be arranged between the first surface and second surface of substrate, and with the first photoelectric device optically-coupled, the second photoelectric device has the first conductive region and the second conductive region.Exemplary light coupling mechanism packaging part further comprises: the first electric trace (electrical trace) is arranged on the surface of substrate and is electrically coupled to the first conductive region of the first photoelectric device; The second electric trace is arranged on the surface of substrate and is electrically coupled to the second conductive region of the first photoelectric device; The 3rd electric trace is arranged on the surface of substrate and is electrically coupled to the first conductive region of the second photoelectric device; The 4th electric trace is arranged on the surface of substrate and is electrically coupled to the second conductive region of the second photoelectric device.The first and second Light Coupled Device are coupled with optical mode by first surface place or the saturating radiative material main body (body of radiation transmissive material) upper and on the first and second photoelectric devices that is arranged on substrate.
The manufacture method that relates to a kind of optical coupler package spare according to of the present invention second total illustrative embodiments, be included in the first photoelectric device and the second photoelectric device moulding electrically insulating material main body on every side, the substrate that has first surface and the second surface relative with first surface with formation, wherein the electrically insulating material main body is arranged between first surface and the second surface, the first photoelectric device is imbedded in the electrically insulating material main body and is arranged between the first surface and second surface of substrate, the first photoelectric device has the first conductive region and the second conductive region, and second photoelectric device imbed in the electrically insulating material main body and be arranged between the first surface and second surface of substrate, the second photoelectric device has the first conductive region and the second conductive region.This illustrative methods further comprises: form the first electric trace, be arranged on the surface of substrate and be electrically coupled to the first conductive region of the first photoelectric device; Form the second electric trace, be arranged on the surface of substrate and be electrically coupled to the second conductive region of the first photoelectric device; Form the 3rd electric trace, be arranged on the surface of substrate and be electrically coupled to the first conductive region of the second photoelectric device; Form the 4th electric trace, be arranged on the surface of substrate and be electrically coupled to the second conductive region of the second photoelectric device; And saturating radiative material main body is arranged on the first surface of substrate and on the first photoelectric device and the second photoelectric device, so that the second photoelectric device and the first photoelectric device are coupled with optical mode.Can form electric trace with the plating that can in the wafer scale manufacturing environment, carry out increasingly automated processing and the various combinations of masks.
Above-mentioned example arrangement has many advantages.The first, photoelectric device is installed in the prior art photo-coupler on the substrate surface, photoelectric device is imbedded the thickness that has reduced packaging part in the substrate.Because device is imbedded in the substrate, therefore the radiative material main body does not need to contain device thoroughly, therefore can have less height and less area occupied, thereby reduce the area occupied of packaging part.In addition, this structure can make trace replace the wire bonding of using in traditional optical coupler package spare, and this has also reduced height and the area occupied of packaging part.The elimination of wire bonding has also improved the reliability of packaging part, and the wafer scale manufacture method can be used.Than traditional lead frame method, wafer-level process allows increasingly automated, and usually causes lower cost.Less the taking of packaging part can also form a large amount of packaging parts at common wafer.
With detailed description above-mentioned illustrative embodiments of the present invention and other embodiment are described with reference to the accompanying drawings.In the accompanying drawings, identical label can represent identical element, and the explanation of some elements can not repeat.
Description of drawings
Fig. 1 shows the front perspective view according to the first exemplary light coupling mechanism packaging part of the present invention.
Fig. 2 shows for clear visual and removed some elements and shown the front perspective view according to the first exemplary light coupling mechanism packaging part of the present invention of some elements with transparent form.
Fig. 3 show for clear visual will be according to the present invention some elements of the first exemplary light coupling mechanism packaging part with the side view shown in the translucent form.
Fig. 4 to Figure 13 shows the illustrative methods of making according to the exemplary light coupling mechanism packaging part shown in Fig. 1 to Fig. 3 of the present invention.
Figure 14 to Figure 16 shows the illustrative methods according to the second exemplary light coupling mechanism packaging part of the present invention and this second exemplary light coupling mechanism packaging part of manufacturing.
Embodiment
Hereinafter, the present invention is described more completely with reference to the accompanying drawings, illustrative embodiments of the present invention shown in the drawings.Yet the present invention can implement with different forms, and should not be construed as the embodiment that is confined to set forth herein.More properly, provide these embodiments so that the disclosure is detailed and complete, and scope of the present invention is conveyed to those skilled in the art fully.In the accompanying drawings, for clear, but the thickness in amplification layer and zone.In whole instructions, identical reference number is used for representing identical element.For different embodiments, element can have different mutual relationships and different positions.
It will also be appreciated that when mention a layer for another the layer or substrate " on " time, its can be located immediately at another the layer or substrate on, perhaps also can have the middle layer.What will also be understood that is, when mention such as the element of layer, zone or substrate for another element " on ", when " being connected to " another element, " being electrically connected to " another element, " being coupled to " another element or " being electrically coupled to " another element, it can be located immediately on another element, connects or be coupled to another element, perhaps can have one or more intermediary element.By comparison, when mentioning an element " be located immediately at another element or layer on ", " being connected directly to " another element or layer or " directly being coupled to " another element or layer, there are not intermediary element or layer.Term used herein " and/or " comprise related column shaping purpose one or more arbitrarily or all combinations.
Term used herein is just for illustrative purpose of the present invention, and should not be construed as implication of the present invention or the scope of limiting.As employed in this manual, singulative can comprise plural form, unless based on context conclusively show special circumstances.In addition, employed in this manual wording " comprises (comprise) " and/or " comprising (comprising) " neither limits shape, quantity, step, action, operation, member, element and/or their group of stating, does not also get rid of to exist or additional one or more other shape, quantity, step, operation, member, element and/or their group.For convenience of description, can use in this article representation space relation term (such as " in ... top ", " ... top ", " bottom ", " ... following ", " in ... below ", " top " etc.), to describe the relation of element shown in the figure or feature and another element or feature.Should be appreciated that except the direction shown in the figure these relative space relation terms mean to comprise the different directions of device (for example, photo-coupler, packaging part) when using or operate.For example, if the device among the figure is squeezed, the element that then is described to " below other elements or feature " or " below other elements or feature " or " under other elements or feature " also can be positioned as " at other elements or above the feature " or " above other elements or feature ".Therefore, exemplary term " in ... top " can contain " in ... top " and " in ... below " both direction.
As used herein, be used for describing various members, assembly, zone, layer and/or parts such as the term of first, second grade, still clearly, these members, assembly, zone, layer and/or parts should not be confined to these terms.These terms only are used for member, assembly, zone, layer and/or parts and another member, assembly, zone, layer and/or parts are differentiated.Therefore, the first member, assembly, zone, layer and/or the parts that will discuss can be called as second component, assembly, zone, layer and/or parts in the situation that does not deviate from scope of the present invention.
Fig. 1～Fig. 3 shows the first illustrative embodiments 100 according to photoelectric packaging part of the present invention.Fig. 1 is the front perspective view of packaging part 100.Packaging part 100 comprises having first surface 111, second surface 112, be arranged at the substrate 110 of the electrically insulating material main body 114 of surface between 111 and 112; Be arranged on a plurality of conductive interconnection terminal pad 115A-115D on the first surface 111; Be separately positioned on a plurality of interconnect bumps 105A-105D (optionally) on the terminal pad 115A-115D; And be arranged on saturating radiative material main body 150 on the first surface 111 and between terminal pad 115A-115D.The reflexive layer of reflectivity or part 152 can be arranged on the upper surface of main body 150 coupling with the radiation between the photovalve of further enhancing packaging part 100.
Fig. 2 has removed main body 150, reflection horizon 152 and interconnect bumps 105A-105D and has had front perspective view with the packaging part 100 of the body of material 114 of the substrate 110 shown in the transparent form.As seeing in the drawings, packaging part 100 further comprises to be imbedded in the substrate 110 and is arranged at the first photoelectric device 130 between the first and second surperficial 111-112 of substrate and imbeds in the substrate 110 and be arranged at the second photoelectric device 140 between the first and second surperficial 111-112 of substrate.Device 130 can have two electric terminals that are arranged on its bottom surface, wherein the bottom surface of device 130 can close to or be positioned at the second surface 112 of substrate.Device 130 can comprise the radiation-emitting diode (radiation-emitting diode) such as light emitting diode, and can be to have two conductive regions as the semiconductor bare chip form of two electric terminal, perhaps can be the surface mount device form that has two electric terminals in its bottom surface.Under arbitrary form, in some implementations, device 130 (for example can comprise discrete radiation-emitting device, discrete LED), wherein to mean device be independently to term " discrete ", and provide specific electric function with the lump form, and not integrated with other elements combination.In other enforcement, device 130 can comprise with radiation-emitting device all-in-one-piece and the drive circuit of electric power is provided for the radiation-emitting device about the input signal that receives.In this integrated embodiment, device 130 can comprise be used to two terminals that supply voltage is provided and be used for providing at least one additional terminal of control inputs signal.
The second electric terminal that device 140 can have first electric terminal on surface disposed thereon and be arranged on its lower surface, wherein its upper surface can close to or be positioned at the first surface 111 of substrate, its lower surface can close to or be positioned at the second surface 112 of substrate.Device 140 can comprise the radiation detector such as photodiode, and can be to have two conductive regions as the semiconductor bare chip form of two electric terminal, perhaps can be to have the surface mount device form of two electric terminals at its end that covers its upper surface and two parts of lower surface.Under arbitrary form, in some implementations, device 140 can comprise discrete radiation detector (for example, discrete photodiode or phototransistor), and wherein term " discrete " defines in a manner described.In other was implemented, device 140 can comprise the electric amplifier that becomes one with radiation detector, and wherein electric amplifier will be amplified by the signal that detecting device produces and provide amplifying signal as output.In this embodiment that becomes one, device 140 can comprise be used to two terminals that supply voltage is provided and be used for providing at least one the additional terminal that amplifies output signal.
Still with reference to Fig. 2, packaging part 100 can further comprise the first electric trace 120A, is arranged on the second surface 112 of substrate and is electrically coupled to the first electric terminal of device 130; The second electric trace 120B is arranged on the second surface 112 of substrate and is electrically coupled to the second electric terminal of device 130.Packaging part 100 can further comprise the first conductive pole 125A and the second conductive pole 125B, each conductive pole all imbed in the substrate 110 and close to or the first surface 111 of substrate have upper surface and close to or have lower surface at the second surface 112 of substrate.The first electric trace 120A extends to the bottom surface of the first post 125A and is electrically coupled to this bottom surface.The second electric trace 120B extends to the bottom surface of the second post 125B and is electrically coupled to this bottom surface.The upper surface of post 125A and 125B is electrically coupled to respectively conductive interconnection terminal pad 115A and 115B.Packaging part 100 can further comprise the second surface 112 that is arranged at substrate and be electrically coupled to device 140 the second terminal the 3rd electric trace 120C and be arranged at the first surface 111 of substrate and be electrically coupled to the 4th electric trace 120D of the first terminal of device 140.Packaging part 100 can further comprise the 3rd conductive pole 125C that imbeds in the substrate 110, wherein the 3rd conductive pole close to or the first surface 111 of substrate have upper surface and close to or have lower surface at the second surface 112 of substrate.The 3rd electric trace 120C extends to the bottom surface of the 3rd post 125C and is electrically coupled to this bottom surface.The upper surface of post 125C is electrically coupled to conductive interconnection terminal pad 115C.The 4th electric trace 120D extends to conductive interconnection terminal pad 115D and is electrically coupled to conductive interconnection terminal pad 115D.
Fig. 3 shows the side view that has with the packaging part 100 of the main body 114 shown in the translucent form and 150.Electrically insulating material main body 114 can be set in itself and device 130 and 140 the side butt (abut) of each, and can adhere to these sides, and the upper surface of reservation device 130 and 140 is in without covering or exposed state at the first surface 111 of substrate.Main body 114 also can be set to its bottom surface that keeps device 130 and 140 and be in without covering or exposed state at the second surface 112 of substrate.Electrically insulating material main body 114 also can be set to each the side butt among itself and the conductive pole 125A-125C, and can adhere to these sides, and the upper surface that keeps post is in without covering or exposed state at the first surface 111 of substrate.Main body 114 also can be set to its bottom surface portions that keeps conductive pole 125A-125C and be in without covering or exposed state at the second surface 112 of substrate.Radiation (for example, light) upwards is radiated the radiative material main body 150 from the upper surface of device 130, runs into the interface between main body 150 and the reflection horizon 152, and reflexes to receiving device 140 downwards, shown in the radiation arrow among the figure.By this way, device 130 and 140 is coupled to each other with optical mode.(as used herein, " optical coupled " expression device 140 can receive the radiation that is sent by device 130, and vice versa.) in order to prevent the optical noise in the circuit for light coupler, electrically insulating material main body 114 is not preferably to being penetrated by the radiation of device 130 emissions and the emission band of device 140 sensitivities.In addition, in order to reduce optical noise, the trace 120C preferably whole bottom surface of covering device 140 enters device 140 to prevent external radiation from the rear surface of device 140.Trace 120C can also further prevent entering of radiation with main body 114 overlapping at least one a small amount of around the periphery of device 140.
Said structure has many advantages.At first, than the photo-coupler that photoelectric device is installed in the prior art of substrate surface, device 130 and 140 is embedded to the thickness that has reduced packaging part 100 in the substrate 110.In addition, because device 130 and 140 is imbedded in the substrate 110, radiative material main body 150 does not need to be equipped with device thoroughly, therefore can have less height and less area occupied, thereby reduce the area occupied of packaging part 100.In addition, this structure allows trace 120A-120D to replace the wire bonding of using in traditional optical coupler package spare, therefore than the photo-coupler of prior art, has also reduced height and the area occupied of packaging part 100.Trace and conductive pole also allow to use interconnection terminal pad rather than lead-in wire, and it has further reduced the area occupied of packaging part.These interconnect bumps can be in the amount of height identical with main body 150 and layer 152, thereby basically can not increase the whole height of packaging part.The elimination of wire bonding has also improved the reliability of packaging part, makes it possible to use wafer scale manufacture method (as hereinafter describing in more detail).Wafer-level process allows the automatic control of height, and compares with traditional lead frame method and usually to cause not expensive cost.As additional advantage, board structure has been eliminated at the lead frame of not moulding (finishing according to tradition) and has been used interim paper and band supporter to form the needs of radiative material (for example optical gel) main body 150.This has eliminated in the prior art in coating and before solidifying the light gel paper back up and band (ribbon tape) has been adhered to the lead frame of not moulding, removes afterwards the processing of paper and band, thereby has saved processing time and cost.
Fig. 4～Figure 13 shows the illustrative methods of manufacturing and encapsulation part 100.With reference to Fig. 4, the paper tinsel by will being coated with resin (for example, be coated with the Copper Foil of resin, or the RCC paper tinsel) be laminated to and make substrate processing on the carrier substrate, wherein carrier substrate can comprise carrier wafer.Substrate processing will for the manufacture of the profile of 100, one such packaging parts of a plurality of packaging parts in Fig. 4 and Fig. 5～Figure 12 subsequently be shown in dotted line by a pair of.Fig. 4～Figure 13 shows along the cross-sectional view of the packaging part 100 of the intercepting of the line 10-10 shown in Fig. 2.With reference to Fig. 5, for example be formed on the paper tinsel by the viscous layer of spraying with thin adhesion usefulness, and on the paper tinsel element 125A-125C, 130 and 140 be arranged on their corresponding positions, wherein viscous layer is fixed element.Element 125A and 125C do not fall into the xsect that is limited by line 10-10, therefore do not appear among Fig. 6～Figure 13, but still exist in manufacture process.Element arranges towards the mode of paper tinsel with their top active surface.Traditional patch device can be used for carrying out this work.Device 130 has two conductive regions 131 and 132 that are arranged on its bottom surface, and wherein the bottom surface is positioned as and has certain intervals ground in the face of substrate processing.Device 140 has the first terminal 141 that is arranged at its upper surface and the second terminal 142 that is arranged at its bottom surface, and wherein upper surface is positioned as towards substrate processing, and the bottom surface is positioned as has certain intervals ground in the face of substrate processing.Next, with reference to Fig. 6, for example by transfer printing molded element 125A-125C, 130 and 140 and substrate processing be formed into shaped material 14.Moulding material 14 encases element and self is bonding with adhesion mode and element.Utilize transfer printing molded processing, unnecessary moulding material is formed on element 125A-125C, 130 and 140 the bottom surface.As shown in Figure 7, the material that these are unnecessary is removed.Can remove by the plural combination in the processing of husky mill, grinding processing, milled processed, chemically mechanical polishing (CMP) processing or these processing.Can avoid forming unnecessary moulding material by using film assistant formation (film-assisted molding) to process, process thereby can omit the processing of husky mill, grinding processing, milled processed and/or CMP.In the film assistant formation is processed, under vacuum towards the molded surface deposit film of top profiled sheeting, then the molded surface of top profiled sheeting is pressed to element 125A-125C, 130 and 140 bottom surface, afterwards moulding material 14 is injected in the space between top profiled sheeting and the substrate processing and the side of element around, make the upper surface of element and bottom surface avoid moulding material.
With reference to Fig. 8, form the conductive layer of patterning so that electric trace 120A-120C to be provided at moulding material 14 and element 125A-125C, 130 and 140 exposed surface.Can form trace with the various combinations of processing.In one embodiment, will be plated on moulding material 14 and element 125A-125C, 130 and 140 the whole exposed surface in the mode of electroless plating (electroless plating) such as the thin layer of the conductive material of metal (for example copper).Reached and each conductive region 131,132 and 142 electric couplings by the plating material, and with the end surfaces electric coupling of the exposure of conductive pole 125A-125C.Also preferably reached and each conductive region 131,132 and 142 metallurgical binding by the plating material, and reach end face metallurgical binding with the exposure of each conductive pole 125A-125C.(as used herein, the metallic atom that metallurgical binding means to be plated material be arranged on conductive region or post end surfaces atom near, and be attached at least the atom of the end surfaces of conductive region or post by weak atomic force.) form the mask layer of patterning to cover the zone that forms trace at conductive material layer subsequently.After this, the expose portion of conductive layer is etched with stays trace 120A-120C.Can make the mask layer of the patterning that comprises photoresist stay on the original position or utilize suitable removal of solvents.The electrolysis plating can be combined with electroless treatment, and the suitable surface-active-treatment that is known in the art can be used for preparing to be used for carrying out electroless surface.In another embodiment, before forming trace 120A-120C, the mask layer of patterning is set at moulding material 14 and element 125A-125C, 130 and 140 exposed surface.This mask covers and does not form the zone of trace, and stays the exposed region that will form trace.To stay to form on the exposed surface of trace with the mask layer that electroless mode is plated to by patterning such as the thin layer of the conductive material of metal (for example copper).Reached and conductive region 131,132 and 142 electric couplings by the plating material, and couple with the exposed ends surface electrical of conductive pole 125A-125C.The mask layer that comprises the patterning of photoresist can be stayed original position or utilized suitable removal of solvents.In another embodiment, on moulding material 14 and element 125A-125C, 130 and 140 whole exposed surface, plate seed coating such as the conductive material of metal (for example copper) in electroless mode.Seed Layer reaches and conductive region 131,132 and 142 electric couplings, and couples with the exposed ends surface electrical of conductive pole 125A-125C.Next, the mask layer of patterning is arranged on the Seed Layer, does not form the zone of trace to cover, and stay the exposed region that will form trace.To be plated on the expose portion that will form trace that the mask layer by patterning of Seed Layer stays in the mode of electrolysis plating such as the conductive material layer of metal (for example copper).Utilize subsequently the layer of removal of solvents patterning, and utilize etchant etching to fall the expose portion of Seed Layer.In the above-mentioned disposal route each can produce with conductive region 131,132 and 142 and the exposed distal ends surface electrical of conductive pole 125A-125C couple trace 120A-120C with metallurgical binding.
With reference to Fig. 9, the packaging part layer that so far forms is peeled off from substrate processing.This can by utilizing suitable dissolution with solvents viscous layer, perhaps realize by utilizing suitable etchant that paper tinsel is carried out etching.In either case, can before dissolving viscous layer or etched foil layer, protection wax layer be arranged on the upper surface of packaging part layer.Next with reference to Figure 10, the packaging part layer is overturn, and form trace 120D and terminal pad 115A-115D at the upper surface of packaging part layer.Can form trace and terminal pad with the various combinations of processing, comprise the described example combinations that is used to form the processing of trace 120A-120C.Briefly, a kind of method is included on the upper surface of base plate for packaging and plates conductive layer in the electroless plating mode, the etching mask of patterning is set, etches away the unwanted part of conductive layer and stay trace and the terminal pad of wanting, remove alternatively subsequently the etching mask of patterning.Other method can be included in the etching mask that forms patterning on the upper surface of packaging part layer, conductive material is plated to trace and the terminal pad of space so that expectation to be provided of etching mask in electroless mode, removes alternatively subsequently the etching mask of patterning.Other method can be included on the upper surface of packaging part layer with electroless mode plating sublayer, form the etching mask of patterning in Seed Layer, conductive material is plated to trace and the terminal pad of space so that expectation to be provided of etching mask in the mode of electrolysis plating, removes subsequently the etching mask of patterning.The trace 120D that in the above-mentioned disposal route each produces electric coupling and is bonded to conductive region 141 in metallurgical mode.
With reference to Figure 11, radiative material main body 150 is arranged on device 130 and 140 and for example by being cured under the temperature that promotes it is solidified thoroughly.Next, the upper surface in main body 150 arranges reflectivity or 152 coupling with further enhanced rad of the reflexive layer of part.With reference to Figure 12, a plurality of interconnect bumps 105A-105D are arranged on the interconnection terminal pad 115A-115D.Interconnection terminal pad 105A-105D can comprise solder projection.With reference to Figure 13, packaging part 100 separates and forms independently packaging part 100 (for example, single) from the packaging part layer of wafer size, and it can be finished by saw, cut etc.
Shown in Figure 6 such as above-mentioned reference, in above-mentioned illustrative methods, if be formed into shaped material 14 with transfer printing molded processing, device 130 and 140 and the bottom surface of conductive pole 125A-125C are exposed in the processing of then utilize removing unnecessary moulding material.Can use the second following manufacturing to process to omit this Transformatin.The second illustrative embodiments comprises until form the identical processing of the moulding material 14 among Fig. 6.Subsequently, with reference to Figure 14, the position above element 125A-125C, 130 and 140 utilizes laser drill (for example, CO
2Laser drill) passes the redundance of material 14 until the bottom surface of hole arrival element forms a plurality of holes 15.Preferably, each conductive region at each element forms two or more holes 15.
With reference to Figure 15, form the conductive layer of patterning so that electric trace 120A-120C to be provided at moulding material 14, hole 15 and element 125A-125C, 130 and 140 exposed surface.Can form trace 120A-120C with the various combinations of processing, comprise the example combinations of the above-mentioned processing of describing with reference to Fig. 8.Briefly, a kind of method can be included on the side in the upper surface of base plate for packaging and hole 15 and the bottom surface and plate conductive layer in the electroless plating mode, the etching mask of patterning is set, etch away the unwanted part of conductive layer and stay the trace 120A-120C that wants, remove alternatively subsequently the etching mask of patterning.Other method can be included in the etching mask that forms patterning on the upper surface of packaging part layer, conductive material is plated to trace 120A-120C and the filler opening 15 of space so that expectation to be provided of etching mask in electroless mode, removes alternatively subsequently the etching mask of patterning.Other method can be included in the side in the upper surface of packaging part layer and hole 15 and bottom surface with electroless mode plating sublayer, form the etching mask of patterning in Seed Layer, the etching mask of patterning is removed subsequently so that the trace 120A-120C of expectation to be provided in the space that the mode that conductive material is plated with electrolysis is plated to etching mask.In the above-mentioned disposal route each produces electric coupling and is bonded to conductive region 131,132 and 142 and the trace 120A-120C on the exposed ends surface of conductive pole 125A-125C in metallurgical mode.
Next, the packaging part layer that so far forms is peeled off from substrate processing, this is similar to the first illustrative methods of describing with reference to Fig. 9.This can by utilizing suitable dissolution with solvents viscous layer, perhaps realize by utilizing suitable etchant that paper tinsel is carried out etching, such as the first illustrative methods.Next, the first illustrative methods of describing such as reference Figure 10 is finished, and with the upset of packaging part layer, and forms trace 120D and terminal pad 115A-115D at the upper surface of packaging part layer.Can use the combination in any of above-mentioned processing.Then carry out the following processing of the first illustrative methods: saturating radiative material main body 150 is arranged on device 130 and 140 and for example by under the temperature that promotes, being cured it is solidified; The layer 152 of reflectivity or part reflective material can be arranged on the top with further enhanced rad coupling of main body 150; A plurality of interconnect bumps 105A-105D are arranged on the interconnection terminal pad 115A-115D; And make packaging part be detached into independently packaging part 100 ' (for example, single) from wafer-class encapsulation part layer, as shown in figure 16.
Replace coating to process, perhaps additional to this, can form by the sputter process of under vacuum, carrying out trace 120A-120D.Usually, sputter has advantage for the Seed Layer that deposition is used for electroplating.Be similar to coating and process, sputter process provides the metallurgical binding of the end surfaces of the conductive region of trace and device and conductive pole.Coating is processed and the needs of butt welding contact have been eliminated in sputter, and has the advantage that reduces treatment temperature and increase output and reliability.Therefore trace 120A-120D and the conductive region of photoelectric device are connected with conductive pole that to be connected be solderless.
It all is separately well known in the prior art that above-mentioned each step of describing with reference to Fig. 4～Figure 16 processes, and those skilled in the art need not undue experimentation and just can put into practice.In view of disclosing herein, those skilled in the art need not undue experimentation just can put into practice combination and the order that has embodied according to the above-mentioned processing of creative method of the present invention.In addition, although the top wafer scale manufacture method of utilizing the wafer scale moulding of having described be understandable that, also can use the substrate level manufacture method of utilizing the moulding of substrate level.
Can be understood that further that the bare chip form that can all be arranged on their two conductive regions (for example, terminal) their top active surface provides device 130 and 140.In this case, all trace 120A-120D can be formed on the first surface 111 of substrate 110, can omit conductive pole 125A-125C in this enforcement.When using one or more conductive pole 125A-125D, each conductive pole all has the ratio of width to height greater than 0.5, and the ratio of width to height can be in 0.5～4 scope, more typically is in 1～4 or 2～4 scope.In this ratio, highly be across the first surface 111 of substrate 110 and the yardstick between the second surface 112, width is perpendicular to elevation dimension, and wherein width measures at its minimum value place.Utilize these scopes of the ratio of width to height, can easier and more reliably post be arranged on the substrate processing during manufacture.
Be to be understood that, the execution of the action of any method with requiring disclosed herein is finishing based on another action not, can carry out these actions with any time order (for example, chronological order) relative to each other, carry out when comprising exercises and intersect and carry out.(for example, intersection can occur when the part of two or more actions is carried out with hybrid mode carries out.) therefore, be to be understood that, although the application's claim to a method has been stated set of actions, but the method claim is not limited to the order of action cited in the claim language, but contain all possible order, carry out when comprising action and intersect and carry out and above other possible orders of clearly not describing, unless the language of claim is specified really not so (for example by stating that clearly an action is before another action or after another action).
Above-mentioned packaging part can be used in the electronic installation that comprises the circuit board that packaging part is installed on it.They also can be used in the system such as power converter, computing machine, communication facilities etc.Should be appreciated that and to assemble other photoelectric device so that other photo-coupler to be provided in either side or the both sides of substrate.
" one (a) ", " one (an) " and " should (the) " any quote mean to represent one or more, unless indicate clearly difference.
The term that adopts herein and expression way are used for the description of term rather than are used for limiting, and use such term and expression way and be not intended to the equivalent of getting rid of shown feature with describing, should be appreciated that various modifications all are feasible in desired scope of the present invention.
In addition, under the prerequisite that does not deviate from scope of the present invention, one or more features of one or more embodiments of the present invention can be combined with one or more features of other embodiments of the present invention.
Although described particularly the present invention about shown embodiment, but be to be understood that, can carry out various replacements, modification, repacking and equivalent arrangements based on the disclosure, and these replacements, modification, repacking and equivalent arrangements are intended to fall within the scope of the present invention and claims.
Claims (20)
1. optical coupler package spare comprises:
Substrate, have first surface, the second surface relative with described first surface and be arranged at described first surface and described second surface between the electrically insulating material main body;
The first photoelectric device is imbedded in the described electrically insulating material main body of described substrate, and is arranged between the first surface and second surface of described substrate, and described the first photoelectric device has the first conductive region and the second conductive region;
The second photoelectric device, imbed in the described electrically insulating material main body of described substrate, and be arranged between the first surface and second surface of described substrate, and be coupled with optical mode with described the first photoelectric device, described the second photoelectric device has the first conductive region and the second conductive region;
The first electric trace is arranged on the surface of described substrate and is electrically coupled to the first conductive region of described the first photoelectric device;
The second electric trace is arranged on the surface of described substrate and is electrically coupled to the second conductive region of described the first photoelectric device;
The 3rd electric trace is arranged on the surface of described substrate and is electrically coupled to the first conductive region of described the second photoelectric device; And
The 4th electric trace is arranged on the surface of described substrate and is electrically coupled to the second conductive region of described the second photoelectric device.
2. optical coupler package spare according to claim 1, wherein, at least one electric trace metallurgical binding is to the conductive region of described the first photoelectric device, and at least one electric trace metallurgical binding is to the conductive region of described the second photoelectric device.
3. optical coupler package spare according to claim 1, wherein, described electrically insulating material main body is bonded in described the first photoelectric device and described the second photoelectric device each in bonding mode.
4. optical coupler package spare according to claim 1 further comprises on the described first surface that is arranged at described substrate and the saturating radiative material main body on described the first photoelectric device and described the second photoelectric device.
5. optical coupler package spare according to claim 4, wherein, described the first photoelectric device has the first surface at the first surface place that is arranged at described substrate and the second surface relative with its first surface, wherein, the first conductive region of described the first photoelectric device and the second conductive region are arranged at the second surface of described the first photoelectric device.
6. optical coupler package spare according to claim 1, further comprise conductive pole, imbed in the described electrically insulating material main body of described substrate and be arranged between the first surface and second surface of described substrate, described conductive pole has and is set to than the first end of the first surface of the more close described substrate of second surface of described substrate and relative with described first end and be set to the second end than the second surface of the more close described substrate of first surface of described substrate; And
Wherein, described conductive trace have on the end that is arranged at described conductive pole and metallurgical binding to the part of this end of described conductive pole.
7. optical coupler package spare according to claim 1, wherein, described the first photoelectric device has the first surface at the described first surface place that is arranged at described substrate and the second surface relative with its first surface;
Wherein, described the second photoelectric device has first surface and the second surface relative with its first surface at the first surface place that is arranged at described substrate; And
Wherein, the described electrically insulating material main body of described substrate covers the second surface of described the first photoelectric device and described the second photoelectric device.
8. optical coupler package spare according to claim 7, further comprise be arranged at described substrate between the second surface of described substrate and the hole in the described electrically insulating material main body between one the second surface in the described photoelectric device.
9. optical coupler package spare according to claim 1 further comprises:
Saturating radiative material main body is arranged on the first surface of described substrate and on described the first photoelectric device and described the second photoelectric device;
A plurality of interconnection terminal pads are arranged on the first surface of described substrate and spatially are separated with described radiative material main body, and each interconnection terminal pad is electrically coupled at least one described electric trace; And
A plurality of interconnect bumps, each interconnect bumps are arranged on separately the interconnection terminal pad.
10. optical coupler package spare according to claim 1, wherein, the described electrically insulating material main body of described substrate comprises that for a radiation of launching in the described photoelectric device be the material that does not penetrate.
11. optical coupler package spare according to claim 1, wherein, the second surface that described the second photoelectric device has the first surface at the first surface place that is arranged at described substrate and is arranged at the second surface place of described substrate; And
Wherein, described the 4th electric trace is arranged on the whole second surface of described the second photoelectric device.
12. the manufacture method of an optical coupler package spare, described method comprises:
Moulding electrically insulating material main body around the first photoelectric device and the second photoelectric device, the substrate that has first surface and the second surface relative with described first surface with formation, wherein, described electrically insulating material main body is arranged between described first surface and the described second surface, described the first photoelectric device is imbedded in the described electrically insulating material main body and is arranged between the first surface and second surface of described substrate, described the first photoelectric device has the first conductive region and the second conductive region, and described the second photoelectric device imbeds in the described electrically insulating material main body and is arranged between the first surface and second surface of described substrate, and described the second photoelectric device has the first conductive region and the second conductive region;
Form the first electric trace, described the first electric trace is arranged on the surface of described substrate and is electrically coupled to the first conductive region of described the first photoelectric device;
Form the second electric trace, described the second electric trace is arranged on the surface of described substrate and is electrically coupled to the second conductive region of described the first photoelectric device;
Form the 3rd electric trace, described the 3rd electric trace is arranged on the surface of described substrate and is electrically coupled to the first conductive region of described the second photoelectric device;
Form the 4th electric trace, described the 4th electric trace is arranged on the surface of described substrate and is electrically coupled to the second conductive region of described the second photoelectric device; And
Saturating radiative material main body is arranged on the first surface of described substrate and on described the first photoelectric device and described the second photoelectric device, so that described the second photoelectric device and described the first photoelectric device are coupled with optical mode.
13. method according to claim 12, wherein, the described electrically insulating material main body of moulding comprises the processing of film assistant formation.
14. method according to claim 12, wherein, the described electrically insulating material main body of moulding comprises transfer printing molded processing.
15. method according to claim 14, wherein, the described electrically insulating material main body of moulding is included in moulding material on the second surface of described the first photoelectric device and described the second photoelectric device, afterwards the moulding material on the second surface of described substrate is removed to expose the second surface of described the first photoelectric device and described the second photoelectric device.
16. method according to claim 12, wherein, forming described the first electric trace comprises and is electroplated onto material at least a portion on surface of described substrate and at least a portion of the first conductive region of described the first photoelectric device, so that the material metallurgical binding of electroplating is to described the first conductive region.
17. method according to claim 12, wherein, the described electrically insulating material main body of moulding is included in the conductive pole described main body of moulding on every side, so that described post is embedded in the described electrically insulating material main body and is arranged between the first surface and second surface of described substrate, described conductive pole has and is set to than the first end of the first surface of the more close described substrate of second surface of described substrate and relative with described first end and be set to the second end than the second surface of the more close described substrate of first surface of described substrate; And
Wherein, form a conductive trace and further comprise the formation trace so that described conductive trace has on the end that is arranged at described conductive pole and metallurgical binding to the part of this end of described conductive pole.
18. method according to claim 12 wherein, forms the first conductive trace and comprises:
In described electrically insulating material main body, form the hole from the second surface of described substrate to the conductive region of described the first photoelectric device; And
Conductive material is arranged in the described hole.
19. method according to claim 12 further comprises:
Form spatially a plurality of interconnection terminal pads that are separated with described radiative material main body at the first surface of described substrate, each interconnection terminal pad is electrically coupled at least one described electric trace; And
Form a plurality of interconnect bumps, each interconnect bumps is arranged on separately the interconnection terminal pad.
20. method according to claim 12, wherein, the described electrically insulating material main body of moulding comprises to form substrate around described the first photoelectric device and described the second photoelectric device:
Described the first photoelectric device and described the second photoelectric device are arranged on the same wafer together with other photoelectric device examples corresponding to other described optical coupler package spare examples; And
The described electrically insulating material main body of moulding on photovalve and same wafer is so that the main body of institute's moulding is across described optical coupler package spare example.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102263506A CN102914832A (en) | 2011-08-05 | 2011-08-05 | Wafer-level molded optical coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102263506A CN102914832A (en) | 2011-08-05 | 2011-08-05 | Wafer-level molded optical coupler |
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| CN102914832A true CN102914832A (en) | 2013-02-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011102263506A Pending CN102914832A (en) | 2011-08-05 | 2011-08-05 | Wafer-level molded optical coupler |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047652A (en) * | 2015-09-01 | 2015-11-11 | 华进半导体封装先导技术研发中心有限公司 | Semiconductor device packaging structure and manufacturing method thereof |
| CN105047651A (en) * | 2014-04-30 | 2015-11-11 | 台湾积体电路制造股份有限公司 | 3D stacked-chip package |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5293441A (en) * | 1991-12-25 | 1994-03-08 | Nec Corporation | Optical device capable of reliably fixing a substrate to a package |
| US6031251A (en) * | 1993-06-07 | 2000-02-29 | Motorola, Inc. | Linear integrated optocoupler and method for forming the same |
| CN1472558A (en) * | 2002-06-28 | 2004-02-04 | ���µ�����ҵ��ʽ���� | Photoelectric hybrid assembly assembly module, manufacturing method and assembly |
| US20050286840A1 (en) * | 2002-10-29 | 2005-12-29 | Ho Soo K | Double mold optocouplers |
| CN101794003A (en) * | 2009-02-02 | 2010-08-04 | 揖斐电株式会社 | Opto-electrical hybrid wiring board and manufacture method thereof |
-
2011
- 2011-08-05 CN CN2011102263506A patent/CN102914832A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5293441A (en) * | 1991-12-25 | 1994-03-08 | Nec Corporation | Optical device capable of reliably fixing a substrate to a package |
| US6031251A (en) * | 1993-06-07 | 2000-02-29 | Motorola, Inc. | Linear integrated optocoupler and method for forming the same |
| CN1472558A (en) * | 2002-06-28 | 2004-02-04 | ���µ�����ҵ��ʽ���� | Photoelectric hybrid assembly assembly module, manufacturing method and assembly |
| US20050286840A1 (en) * | 2002-10-29 | 2005-12-29 | Ho Soo K | Double mold optocouplers |
| CN101794003A (en) * | 2009-02-02 | 2010-08-04 | 揖斐电株式会社 | Opto-electrical hybrid wiring board and manufacture method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047651A (en) * | 2014-04-30 | 2015-11-11 | 台湾积体电路制造股份有限公司 | 3D stacked-chip package |
| CN105047651B (en) * | 2014-04-30 | 2018-05-25 | 台湾积体电路制造股份有限公司 | 3D stacked chips packaging parts |
| CN105047652A (en) * | 2015-09-01 | 2015-11-11 | 华进半导体封装先导技术研发中心有限公司 | Semiconductor device packaging structure and manufacturing method thereof |
| CN105047652B (en) * | 2015-09-01 | 2019-01-04 | 华进半导体封装先导技术研发中心有限公司 | The encapsulating structure and production method of semiconductor devices |
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Application publication date: 20130206 |