CN1029065C - Apparatus for detecting distribution of electric surface potential - Google Patents
Apparatus for detecting distribution of electric surface potential Download PDFInfo
- Publication number
- CN1029065C CN1029065C CN 89104299 CN89104299A CN1029065C CN 1029065 C CN1029065 C CN 1029065C CN 89104299 CN89104299 CN 89104299 CN 89104299 A CN89104299 A CN 89104299A CN 1029065 C CN1029065 C CN 1029065C
- Authority
- CN
- China
- Prior art keywords
- signal
- sensing electrode
- sensing
- voltage
- testee
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 22
- 230000005669 field effect Effects 0.000 claims abstract description 19
- 230000006698 induction Effects 0.000 claims description 17
- 241000406668 Loxodonta cyclotis Species 0.000 claims description 6
- 241000283080 Proboscidea <mammal> Species 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 2
- 230000000712 assembly Effects 0.000 claims 1
- 238000000429 assembly Methods 0.000 claims 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 116
- 230000007423 decrease Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 90
- 230000000875 corresponding effect Effects 0.000 description 69
- 238000010586 diagram Methods 0.000 description 28
- 239000003990 capacitor Substances 0.000 description 14
- 230000008859 change Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 241000252203 Clupea harengus Species 0.000 description 9
- 210000000988 bone and bone Anatomy 0.000 description 9
- 238000013461 design Methods 0.000 description 9
- 235000019514 herring Nutrition 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 8
- 102100024348 Beta-adducin Human genes 0.000 description 6
- 101000689619 Homo sapiens Beta-adducin Proteins 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 230000009931 harmful effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000007634 remodeling Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 229910004438 SUB2 Inorganic materials 0.000 description 2
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 101150042711 adc2 gene Proteins 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 2
- 101150018444 sub2 gene Proteins 0.000 description 2
- 230000002463 transducing effect Effects 0.000 description 2
- 108010076504 Protein Sorting Signals Proteins 0.000 description 1
- 101100067427 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FUS3 gene Proteins 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- KPHWPUGNDIVLNH-UHFFFAOYSA-M diclofenac sodium Chemical compound [Na+].[O-]C(=O)CC1=CC=CC=C1NC1=C(Cl)C=CC=C1Cl KPHWPUGNDIVLNH-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009342 intercropping Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000001932 seasonal effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
A voltage is electrostatically induced at a sensing device in correspondence with a surface potential of a measured object. In the case where the sensing device uses a field effect transistor in transferring detected information, there are some factors decreasing the accuracy of detection. Various new arrangements prevent such decreases in the accuracy of detection. In the case of the surface potential of the measured object corresponds to an optical image, new arrangements ensure accurate detection of the optical image. In some cases, color component signals are obtained on the basis of a detection signal.
Description
The present invention relates to and be used to detect the also generation of surface potential distribution corresponding to the device of the signal of telecommunication of measured Potential Distributing.
In some video sensor-based systems, photoelectric conversion section can make optical memory charge according to the optical image of object, and the surface potential of charging memory device distributes and just reflecting this optical image.For example, electrostatic induction type surface potential transducer just can be used to detect this surface potential distribution and produce the corresponding signal of telecommunication.
Because the transducing part of this surface potential transducer has very high electrical impedance, so usually an impedance transducer is connected on the output of transducing part.If impedance transducer adopts when being field-effect transistor, tend to produce some harmful effect by transistor drain to the leakage current of its grid, for example influence precision of sensor output signal or the like.
The object of the present invention is to provide a kind of video sensing device with good detection surface potential distribution capability.
First kind of device of the present invention comprises: the field-effect transistor with grid and drain electrode; A grid input capacitance that is connecting transistor gate, this electric capacity is charged by the leakage current between transistor drain and the grid; Make transistorized grid be in the device of a certain voltage, this voltage is the electrostatic induction voltage corresponding to the testee surface potential; Be used for the input capacitance discharge so that it returns to the device of transistor gate pole tension again; Be connected the diode between transistor gate and the electric discharge device, this diode has the polarity opposite with the discharging current direction of input capacitance.
Second kind of device of the present invention comprises: the probe field effect transistor with grid and drain electrode; A first grid input capacitance that is connecting the crystal detection tube grid, this electric capacity is charged by the leakage current between the crystal detection pipe drain and gate; Make the crystal detection tube grid be in the device of a certain voltage, this voltage is the electrostatic induction voltage corresponding to the testee surface potential; The input capacitance discharge that makes the crystal detection tube grid is so that it returns to the device of the grid voltage of crystal detection pipe; Compensating field effect transistor with grid and drain electrode; A second grid input capacitance that is connecting the compensated crystal tube grid, this electric capacity is charged by the leakage current between the compensation transistor drain and gate; The discharge of the discharge of input capacitance of compensated crystal tube grid and crystal detection pipe input capacitance is carried out synchronously and made it return to the device of the grid voltage of compensation transistor; And the output signal of crystal detection pipe has relevant with the testee surface potential respectively and incoherent first component and second component, the output signal of compensation transistor be one with the identical output signal of crystal detection pipe output signal second component.
The third device of the present invention comprises: the sensing electrode that several are arranged in a row, and the voltage of these electrodes can be corresponding to the electrostatic induction voltage of testee surface potential; Several its grids are connecting the field-effect transistor of each sensing electrode respectively, and these field-effect transistors also have drain electrode; Several are connecting the grid input capacitance of each transistor gate, and each electric capacity is charged by the leakage current between the corresponding crystal pipe drain and gate respectively; Each transistorized output signal is transported to certain general output line successively to obtain the device of time series output signal, makes each grid input capacitance discharge so that after each circulation that each transistor output signal is transmitted is successively finished, make each grid input capacitance return to the device of each transistor gate pole tension again; A memory; One to a certain output signal and one group of adder of carrying out add operation corresponding to the time series output signal of a circulation of each transistor output signal sequence transmission from memory; Be used to utilize the device of the output signal correction memory stored information of adder.
The 4th kind of device of the present invention comprises: the voltage that bears altogether is the sensing electrode corresponding to the electrostatic induction voltage of testee surface potential; The field-effect transistor that its grid is connected with sensing electrode, this transistor also have a drain electrode; A grid input capacitance that links to each other with transistor gate, this electric capacity is charged by the leakage current between transistor drain and the grid; Be used for sensing electrode is periodically shifted near, moves device far away with respect to testee; Make the grid input capacitance discharge so that it returns to the device of transistor gate pole tension in a specified time, the described time limit is depended on the moving period of sensing electrode.
The 5th kind of device of the present invention comprises: its voltage that bears is the sensing electrode corresponding to the electrostatic induction voltage of testee surface potential; The field-effect transistor that its grid is connected with sensing electrode, this transistor also have a drain electrode; A grid input capacitance that is connected with transistor gate, this electric capacity is charged to it by the leakage current between transistor drain and the grid; Be used for that periodically mobile transmission, sensing electrode makes it shift near, move the device of testee far away respectively between the primary importance and the second place; Make the grid input capacitance discharge so that when sensing electrode is in primary importance, make this electric capacity return to the device of transistor gate pole tension; Be used for when sensing electrode is in primary importance, output signal being outputed to lead-out terminal by transistor so that the device that detects; Be used to make the grid input capacitance discharge so that when sensing electrode is in the second place, make this electric capacity return to the device of transistor gate pole tension; Be used for when sensing electrode is in the second place, output signal being outputed to lead-out terminal by transistor so that the device that detects.
The 6th kind of device of the present invention comprises: several sensing electrodes that are arranged in a row, the voltage that these electrodes bore are the electrostatic induction voltage that corresponds to the testee surface potential that is a certain optical image, and each sensing electrode scans this testee; The output signal that is used for successively each sensing electrode being provided is transferred to certain general output line to obtain the device corresponding to the time series output signal of respective scan line; Voltage that it bore is corresponding to the reference part of the surface potential of optical image black part, and this reference part is scanned by each sensing electrode; Be used to store device as with reference to output signals signal, when with sensing electrode scan reference parts; Be used for reading reference signal and the output signal during from sensing electrode scanning testee deducts the device of reference signal.
The 7th kind of device of the present invention comprises: the floating boom poloidal field effect transistor with grid; Be used to produce device corresponding to the electrostatic induction voltage of testee surface potential; Induced voltage is transported to the device of transistor gate; The device of the signal of transmission transistor output.
The 8th kind of device of the present invention comprises: recording medium; Be used on recording medium, producing the device of the charge latent image elephant of object; Be arranged on the chromatic filter between medium and the object; Sensing electrode; At the device that produces on the sensing electrode corresponding to the electrostatic induction voltage of the latent image elephant on the recording medium; Be used for producing the device of image signal, the device that sensing electrode is scanned recording medium according to the voltage of sensing electrode; From image signal, obtain the device of chrominance signal component.
The 9th kind of device of the present invention comprises: recording medium; Be used for producing respectively in the zones of different of recording medium the device of a plurality of charge latent image elephants of an object, these charge latent images resemble respectively corresponding the different colored video of this object; Sensing electrode; Be used at the device that produces on the sensing electrode corresponding to the electrostatic induction voltage of the latent image elephant on the recording medium; Produce the device of image signal according to the voltage of sensing electrode; Make the device of sensing electrode scan recording media; Be used for obtaining the device of chrominance signal component from image signal.
Fig. 1 is a schematic diagram of implementing the device of first embodiment of the invention.
Fig. 2 is the schematic diagram that the operating principle of the device of implementing first embodiment is described.
Fig. 3 is that the voltage of the crystal detection pipe in Fig. 1, the device shown in Figure 2 is schemed over time.
Fig. 4 is the schematic diagram that the operation logic of the device of implementing first embodiment is described.
Fig. 5 is an equivalent circuit diagram of implementing the device of first embodiment.
Fig. 6 is a schematic diagram of implementing the device of second embodiment of the invention.
Fig. 7 is the time cycle figure that describes the signal waveform of the device of implementing second embodiment.
Fig. 8 is a schematic diagram of implementing the device of third embodiment of the invention.
Fig. 9 is a schematic diagram of implementing the device of four embodiment of the invention.
Figure 10 is the schematic diagram of the sensing head in the device shown in Figure 9.
Figure 11 is the time cycle figure that describes the signal waveform of sensing head shown in Figure 10.
Figure 12 is the fragmentary, perspective view of Fig. 9 and sensing head shown in Figure 10.
Figure 13 is the perspective view of sensing head shown in Figure 9 and testee.
Figure 14 is the plan view of testee shown in Figure 9.
Figure 15 is a schematic diagram of describing the Device Testing signal waveform of implementing the 4th embodiment.
Figure 16 is a schematic diagram of implementing the device of fifth embodiment of the invention.
Figure 17 is a schematic diagram of describing the time limit relation of device each several part shown in Figure 16 in each state.
Figure 18 is a schematic diagram of describing the time limit relation of device each several part in different conditions of implementing sixth embodiment of the invention.
Figure 19 is a partial block diagram of implementing the device of the 6th embodiment.
Figure 20 is a schematic diagram of implementing the device of seventh embodiment of the invention.
Figure 21 is the testee surface potential in the device shown in Figure 20 and detects graph of a relation between the output.
Figure 22 is a schematic diagram of implementing the device of the 7th embodiment.
Figure 23 is the testee surface potential in the device shown in Figure 22 and detects graph of a relation between the output.
Figure 24 is a schematic diagram of implementing the sensing head in the device of the 7th embodiment.
Figure 25 is a plan view of implementing the testee in the device of eighth embodiment of the invention.
Figure 26 is a schematic diagram of implementing the device of ninth embodiment of the invention.
Figure 27 is a perspective view of implementing the sensing head in the device of the 9th embodiment.
Figure 28 is the part figure that implements the device of the 9th embodiment.
Figure 29 is the schematic diagram of part of implementing the device of the 9th embodiment.
Figure 30 is a schematic diagram of describing the gate bias that put on the crystal detection tube grid in the device of implementing the 9th embodiment.
Figure 31 is a schematic diagram of implementing the device of tenth embodiment of the invention.
Figure 32 is a schematic diagram of implementing the device of eleventh embodiment of the invention.
Figure 33 is a schematic diagram of implementing the device of twelveth embodiment of the invention.
Figure 34 is the plan view of the recording medium shown in Figure 33.
Figure 35 is the plan view of chromatic filter shown in Figure 33.
Figure 36 implements the sensing head in the device of the 12 embodiment and the schematic diagram of recording medium.
Figure 37 is a schematic diagram of implementing the signal processor in the device of the 12 embodiment.
Figure 38 is a schematic representation of apparatus of implementing thirteenth embodiment of the invention.
Figure 39 is a schematic diagram of implementing the signal processor in the device of the 13 embodiment.
Figure 40 is a schematic representation of apparatus of implementing fourteenth embodiment of the invention.
Figure 41 is the schematic diagram of part of implementing the device of the 14 embodiment.
Figure 42 is the perspective view of the optical color separator shown in Figure 40.
Figure 43 implements the sensing head in the device of the 14 embodiment and the schematic diagram of recording medium.
Figure 44 implements the sensing head in the device of the 15 embodiment of the present invention and the schematic diagram of recording medium.
In whole accompanying drawings, same or corresponding element illustrates with same reference number.
First optimum implementation
Referring to accompanying drawing 1, the device of constructing according to first embodiment of the invention includes sensing electrode ED, and this electrode is close to the testee O that is provided with in opposite directions with it.Sensing electrode ED is connected with the grid of probe field effect transistor DF and the negative electrode of diode D.The anode of diode D is connected with the drain electrode of field effect transistor switch transistor RF.
The source ground of switching transistor RF.The grid of switching transistor RF receives reseting pulse signal Pr by binding post 2.This reseting pulse signal Pr comprises a positive horizontal pulse sequence.
The drain electrode of crystal detection pipe DF links to each other with positive source lead V, and its source electrode is connecting an end and the lead-out terminal 1 of load resistance Rl.The other end of load resistance Rl links to each other with power cathode lead-V.
During the surface potential that detects testee O, sensing electrode ED is placed a certain position on the surface that is close in testee O.On sensing electrode ED, induce the voltage that the surface potential variation with testee O changes by electrostatic induction.This induced voltage is transferred to the grid of crystal detection pipe DF from sensing electrode ED.Crystal detection pipe DF uses as the impedance down-converter.The source potential that depends on the crystal detection pipe DF of induced voltage imposes on lead-out terminal 1 as detectable signal, and this detectable signal is just reflecting the surface potential of testee O.
Move with respect to testee O at sensing electrode ED, thereby when the surface of testee O scanned, the detectable signal that lead-out terminal 1 is drawn will distribute according to the surface potential of testee and change.
With as described in clearer, switching transistor plays resetting means as hereinafter, thereby can prevent the harmful effect by the leakage current of the drain-to-gate of crystal detection pipe DF.It is worthy of note switching transistor RF response reseting pulse signal Pr and periodically make the gate short ground connection of crystal detection pipe DF especially.
As shown in Figure 2, the grid of crystal detection pipe DF has the parasitic capacitance Cin with respect to ground.Make capacitor C in charging from the leakage current " i " of the drain-to-gate of crystal detection pipe DF, thereby increased the grid voltage of crystal detection pipe DF.Switching transistor RF forms a switch SW in parallel with capacitor C in
rThis switch SW
rResponse reseting pulse signal Pr periodically makes capacitor C in discharge.Like this, the grid voltage of crystal detection pipe DF just periodically is reset to earth potential, as shown in Figure 3.Reseting pulse signal Pr preferably has a certain predetermined frequency.
As shown in Figure 4, establish and have electric charge, then between the surface of sensing electrode ED and testee O, can be formed with capacitor C if the surface of testee O is relative with electrode ED.If the surface potential of testee O is level V
f, the source electrode output voltage V of crystal detection pipe DF then
OutBe approximately equal to the gate input voltage V of crystal detection pipe DF
In, the latter can represent by following equation.
V
in＝｛C/（C+C
in）｝·V
f
Switch SW
rConfiguration will cause an input capacitance C who has increased at the grid of crystal detection pipe DF
InCan find out obviously that from above-mentioned equation the input capacitance of increase will cause input voltage V
InReduction, and reduce output voltage thus.Therefore, preferably prevent because switch SW is set
rAnd cause the increase of input capacitance.As described in hereinafter will be clearer, diode D can suppress or prevent this unwanted increase in the input capacitance.
As shown in Figure 5, crystal detection pipe DF has the grid input capacitance C of self
DfSwitching transistor RF also has capacitor C between its drain electrode and source electrode
RfDiode D has the capacitor C corresponding to its reverse current
dCapacitor C
dAnd C
RfBe and be connected in series.The capacitor C that is cascaded
dAnd C
RfAgain with capacitor C
DfBe connected in parallel.Capacitor C
Df, C
dAnd C
RfBe combined to form and be input capacitance C
InBecause capacitor C
dVery little, capacitor C then
dAnd C
RfCombination also very little, to such an extent as to can omit capacitor C
RfTherefore, switching transistor RF's is arranged on input capacitance C
InIn only produce minimum increment.
Diode D is with respect to input capacitance C
InSuitably connect, so that the polarity of diode D and input capacitance C
ImThe direction of discharging current opposite.Therefore, diode D provides very big resistance to discharging current.This resistance is being determined input capacitance C
InDischarge time constant, and be relevant to input capacitance C
InValue.Though this resistance is very big, input capacitance C
InValue but very little, so discharge time constant is also very little.This little time constant makes input voltage V
InCan reset to earth potential soon.
Second optimum implementation
Referring to Fig. 6, the device of implementing second embodiment of the invention includes the sensing electrode ED that is close to the testee O that is provided with in opposite directions with it.This sensing electrode ED is connected with the grid of probe field effect transistor DF and the drain electrode of switching field effect transistor RF.
The source ground of switching transistor RF, the grid of switching transistor RF receives reseting pulse signal Pr by terminal 2.
Reseting pulse signal Pr also is applied to the grid of another switching field effect transistor RFd by terminal 2.The source ground of this switching transistor RFd, and its drain electrode is connecting the grid of compensating field effect transistor DFd.
The drain electrode of crystal detection pipe DF is connected with positive source lead V with the drain electrode of compensation transistor DFd.The source electrode of crystal detection pipe DF is connecting an end and the lead-out terminal 1 of load resistance Rl.The other end of load resistance Rl is connected with power source loads-V.The source electrode of compensation transistor DFd is connecting an end and the lead-out terminal 3 of another load resistance Rld.The other end of this load resistance Rld is connecting power supply negative wire-V.
During the surface potential that detects testee O, sensing electrode ED is positioned at the position near testee O surface.On sensing electrode ED, respond to the voltage that produces corresponding to the surface potential of testee O by electrostatic induction.This induced voltage is transferred to the grid of crystal detection pipe DF from sensing electrode ED.Crystal detection pipe DF is as the impedance down-converter.Source potential based on the crystal detection pipe DF of induced voltage imposes on lead-out terminal 1 as detection signal, and this detection signal is reflecting the surface potential of testee O.
Move so that the surface of testee O is scanned with respect to testee O at sensing electrode ED, the detection signal that presents at lead-out terminal 1 place is with respect to the distribution of the surface potential of testee and change.
As described in hereinafter will be clearer, switching transistor RF be as resetting means, can be used for preventing the harmful effect by the leakage current generating of the drain-to-gate of crystal detection pipe DF.Particularly this switching transistor also will periodically respond reseting pulse signal Pr and make the gate short ground connection of crystal detection pipe DF.
The grid of crystal detection pipe DF has the input parasitic capacitance with respect to ground.Make this input capacitance charging from the leakage current of the drain-to-gate of crystal detection pipe DF, can increase the grid voltage of crystal detection pipe DF thus.Switching transistor RF forms the switch that is connected with this input capacitance.This switching response reseting pulse signal Pr and periodically make input capacitance discharge is so that make the grid voltage of crystal detection pipe DF periodically reset to earth potential.Shown in Fig. 7 (a), the output voltage that imposes on lead-out terminal 1 from the source electrode of crystal detection pipe DF is done periodic the variation with respect to the grid voltage of crystal detection pipe DF, periodically begins to increase and turn back to minimum reference potential from minimum reference potential.The output voltage that presents at lead-out terminal 1 has the component that is reflecting the testee surface potential.Reseting pulse signal Pr preferably has a certain predetermined frequency.
As the grid of crystal detection pipe DF, compensation transistor DF
dGrid also have input parasitic capacitance with respect to ground.By compensation transistor DF
dThe leakage current of drain-to-gate make this input capacitance charging, can increase compensation transistor DF thus
dGrid voltage.Switching transistor RF
dForm and compensation transistor DF
dThe switch that is connected of input capacitance.This switching response reseting pulse signal P
rAnd periodically make the input capacitance discharge, so that make compensation transistor DF
dGrid voltage periodically reset to earth potential.Shown in Fig. 7 (b), by compensation transistor DF
dSource electrode impose on the output voltage of lead-out terminal 3 with respect to compensation transistor DF
dGrid voltage do periodic the variation, periodically begin to increase and turn back to minimum reference potential from minimum reference potential.
As shown in Figure 7, be presented on lead-out terminal 1 and 3 output signal respectively and be mutually mutually synchronization and have similar waveform, the difference between them only is not have any component that is reflecting the surface potential of testee O in the output signal that lead-out terminal 3 provides.Therefore, when the difference that obtains with voltage subtracter or difference amplifier (not shown) between lead-out terminal 1 and 3 voltages of exporting, shown in Fig. 7 (C), can from the output signal of lead-out terminal 1 and 3, obtain only to reflect the component of the surface potential of testee O.
The 3rd optimum implementation
Fig. 8 shows the 3rd device for carrying out said of the present invention, and the change in some designs of hereinafter pointing out, this device for carrying out said is similar to Fig. 6 and device for carrying out said shown in Figure 7.
In device for carrying out said shown in Figure 8, capacitor C
pBe connected compensation transistor DF
dGrid and ground between, variable resistor VR is connected compensation transistor DF
dBetween grid and the power supply main track V.
Regulate variable resistor VR, so that make and compensation transistor DF
dCorresponding constant with the input capacitance of being correlated with crystal detection pipe DF is identical fully with discharge time constant in the charging of relevant input capacitance.This design can make compensation transistor DF
dWith the mutual balance of operating characteristic of crystal detection pipe DF, thereby can the signal component that reflect testee O surface potential accurately be detected.
The 4th optimum implementation
Referring to Fig. 9, the device of implementing four embodiment of the invention comprises sensing head EDA, and this sensing head has several sensing electrode ED that arranges by predetermined pattern.The output signal of sensing head EDA output is delivered to A/D converter ADC by position lead-out terminal 1 thereon.At the device run duration, sensing head EDA is close to testee O so that make each sensing electrode ED of configuration aim at the surface of testee O.
Adder ADD carries out add operation to transducer ADC with the output signal that row memory LM provides.The signal storage of adder ADD output is in row memory LM and memory MA.
As shown in figure 10, sensing head EDA includes sensing electrode ED
1-ED
n, these electrodes are by connecting line l
1-l
nRespectively with crystal detection pipe DF
1-DF
nGrid be connected.These sensing electrodes ED
1-ED
nAlso respectively with switching transistor RF
1-RF
nDrain electrode be connected.
Switching transistor RF
1-RF
nEach grid all connecting input terminal 2, to receive reseting pulse signal P
rReseting pulse signal P
rComprise a negative horizontal pulse sequence.Switching transistor RF
1-RF
nSource electrode all with reference power line V
SsBe connected.
Crystal detection pipe DF
1-DF
nEach the drain electrode all be connected with power line V.Crystal detection pipe DF
1-DF
nEach source electrode connecting corresponding switching transistor SF respectively
1-SF
nDrain electrode.Switching transistor SF
1-SF
nEach source electrode all join with lead-out terminal 1.Load resistance R
lBe connected between lead-out terminal 1 and the ground.
Switching transistor SF
1-SF
nAs switch element, can make crystal detection pipe DF
1-DF
nBe communicated with or be not communicated with lead-out terminal 1.For switching transistor SF
1-SF
nIn each, when its grid was accepted high level voltage or low level voltage respectively, then source electrode-drain path was in conducting or not on-state respectively.Promptly as each switching transistor SF
1-SF
nGrid when receiving high level voltage or low level voltage respectively, this transistor is to be opened or closure state.
Switching transistor SF
1-SF
nGrid join with the output of shift register SR respectively, and from shift register SR, obtain output signal P
1-P
nThe clock end of shift register SR is by clock input terminal 8 receive clock signal P
c, clock signal P
cWaveform as shown in figure 11.
As shown in figure 11, from each output signal P of shift register SR
1-P
nRespond input clock signal P successively
cAnd present high level.Therefore, each switching transistor SF
1-SF
nTo open successively according to this clock signal.
As shown in figure 12, sensing head EDA includes substrate BP, and is formed with several sensing electrodes ED in this substrate
1-ED
nWith connecting line l
1-l
nEach sensing electrode ED
1-ED
nBe arranged in a row.
The operation of this device is as follows.Make sensing head EDA be close to testee O, and make each sensing electrode ED
1-ED
nBe provided with facing to the surface of testee O.Electrostatic induction makes each sensing electrode ED
1-ED
nThe voltage that bears is for corresponding to respectively and this sensing electrode ED
1-ED
nThe a certain voltage of the surface potential of relative testee part.Induced voltage is from each sensing electrode ED
1-ED
nBy connecting line l
1-l
nBe transferred to each crystal detection pipe DF respectively
1-DF
nGrid.
As mentioned above, switching transistor SF
1-SF
nTo open successively.Therefore, correspond to each crystal detection pipe DF
1-DF
nThe voltage signal of grid voltage will be by switching transistor SF
1-SF
nSource electrode-drain path successively from crystal detection pipe DF
1-DF
nSource electrode be transferred to lead-out terminal 1.So the output signal that produces at lead-out terminal 1 place is a time variable, and corresponding to the surface potential distribution of this linear part of testee.
By crystal detection pipe DF
1-DF
nAfter the transmission that is transported to the voltage signal of lead-out terminal 1 is finished, promptly after the scanning of this linear part of testee O is finished, reseting pulse signal P
rMake each switching transistor RF
1-RF
nConducting is so that make sensing electrode ED
1-ED
nWith crystal detection pipe DF
1-DF
nThe voltage of grid returns to reference voltage Vss.Then, as shown in figure 13, with a certain suitable driving mechanism (not shown) with sensing electrode ED
1-ED
nThe perpendicular direction Y of orientation X on make sensing head EDA move a certain predetermined distance with respect to testee O.In other words, be that sensing head EDA is moved to position corresponding to the next linear part of testee O, the last linear part of testee O is closed on and be parallel to this linear part.The scan mode that scans with the last linear part that is similar to testee scans the back one linear part of testee O.Drive each switching transistor SF successively
1-SF
n, so that be similar to mode above-mentioned successively with voltage signal from crystal detection pipe DF
1-DF
nBe transferred to lead-out terminal 1.Make switching transistor RF then
1-RF
nConducting is so that make sensing electrode ED
1-ED
nWith crystal detection pipe DF
1-DF
nThe voltage of grid resets to reference voltage Vss.
These processes will periodically repeat, and finish up to the scanning to the active surface of testee O.During the surface scan to testee O, the output signal that lead-out terminal 1 place produces will change in time, and distribute corresponding with the surface potential of testee O.
In Figure 14, letter " A ", " B ", " C " and " D " have marked and the corresponding chain-dotted line in some position, during sensing head EDA moves with respect to testee O, will move past these positions successively by sensing head EDA.
For each crystal detection pipe DF
1-DF
n, by transistor drain to the leakage current of grid all can as by in the device for carrying out said shown in Fig. 1-5 like that, in the detection signal that is reflecting the testee surface potential, produce harmful effect.Switching transistor RF
1-RF
nResponse reseting pulse signal P
r, periodically make crystal detection pipe DF
1-DF
nGrid voltage reset to reference voltage V
SsThereby, can avoid the harmful effect of leakage current to the detection signal that reflecting the testee surface potential.
Figure 15 (b) shows an example surveying output voltage waveforms, the voltage when this voltage scans testee O corresponding to the line B in Figure 14.Solid line among Figure 15 (c) shows the waveform of the detection output voltage that is obtained when the line C in Figure 14 scans testee O.Be shown in dotted line the actual distribution of testee O among Figure 15 (C) along the surface potential of the line C among Figure 14.Just as described in Figure 15, survey difference between the surface potential of two adjacent linear parts that output voltage reflecting testee O.
The running of this device will further describe hereinafter by way of example.When the line A among sensing head EDA regional outer Figure 14 at testee O scans, survey output signal and remain reference voltage V
Ss, shown in Figure 15 (a).This detection output voltage converts the corresponding digital detectable signal to by transducer ADC, and is transported to adder ADD.Adder is carried out add operation to this digital detection signal with from the digital signal that row memory LM reads.Be stored into memory MA and row memory LM from the digital signal of adder output.Before the scanning of A along the line began, reply row memory LM carries out zero clearing or title resets, and like this, will directly be stored into memory MA with the corresponding digital detection signal of waveform of Figure 15 (a).
After the scanning that the line A along Figure 14 carries out is finished, scan along the line B among Figure 14.Carry out scan period at line B, survey output voltage with the wave form varies shown in Figure 15 (b) along Figure 14.This detection output voltage is converted to the corresponding digital detectable signal and is delivered to adder ADD by transducer ADC.Adder ADD with present digital detection signal and read from row memory LM, corresponding to the previous digital detection signal addition of the waveform of Figure 15 (a).Digital signal by adder ADD output stores memory MA and row memory LM into.By this output digital signal of adder ADD output corresponding to present digital detection signal and previous digital detection signal and.
Finishing after the scanning of the line B of Figure 14, scan along the line C among Figure 14.Carry out scan period at the line C along Figure 14, it surveys output voltage with the wave form varies shown in Figure 15 (c).This detection output voltage converts corresponding digital detectable signal and input summer ADD to by transducer ADC.Adder ADD will this present digital detection signal and read from row memory LM, corresponding to the previous output digital signal addition of waveform shown in Figure 15 (b).This output digital signal by adder ADD output stores memory MA and row memory LM into.By this output digital signal of adder ADD output corresponding to present digital detection signal and previous output digital signal sum.
These processes will repeat, and are all scanned up to the active surface quilt of testee O.
Be appreciated that from the above description, though appear at the difference between the surface potential of two adjacent linear parts that the original detectable signal of lead-out terminal 1 reflecting testee O, but will handle this original detectable signal by the assembly that device ADC, ADD and LM constitute, and obtain thus directly to reflect that the needed detectable signal of the surface potential of a certain linear part of testee O, this needed detectable signal will be stored among the memory MA for future use.
Should be noted that the device for carrying out said shown in Fig. 9-15 can be retrofited with different modes.In first kind of remodeling, connecting line l
1-l
nCan center on by the electrostatic screen thing, to prevent crystal detection pipe DF
1-DF
nGrid voltage be subjected to the influence of external electrical field and fluctuate.In second kind of remodeling, sensing electrode ED
1-ED
nSpaced-apart with the electrostatic screen thing, to prevent or to be suppressed at adjacent sensing electrode ED
1-ED
nOn phase mutual interference between each detectable signal of inducing.In the third remodeling, can be with sensing electrode ED
1-ED
nOmit, and to crystal detection pipe DF
1-DF
nGrid suitably design, make it can be used as sensing electrode and use.
The 5th optimum implementation
Figure 16 shows the 5th device for carrying out said of the present invention, and except some design variation of hereinafter pointing out, this device for carrying out said is similar to the device for carrying out said shown in Fig. 9-15.
In device for carrying out said shown in Figure 16, sensing head EDA is connected with the moving part (armature) 6 of drive unit BCM with central shaft 5 by connector 4.Signal generator SG is to drive unit BCM output drive signal.Drive unit BCM along direction U mobile sensor head EDA, makes it to shift near or moves testee O far away according to drive signal.Drive unit BCM comprises the permanent magnet 7 that matches with moving part 6.
Shown in Figure 17 (a), sensing head EDA periodically shifts near, moves testee O far away between the two positions by drive unit BCM.The linear scan of testee O and crystal detection tube grid voltage reset all and sensing head EDA finishes synchronously successively in the change in location that shifts near, moves between distant positions.
In first example, when sensing head EDA remains on when shifting near the position, to carry out linear scan continuously, and thus the surface potential of the corresponding linear part of testee is detected testee O, this process is shown in Figure 17 (b).And when sensing head EDA kept moving distant positions, the grid voltage of crystal detection pipe continued to reset, and this is also shown in Figure 17 (b).
In second example, sensing head EDA remain on shift near the position part-time at interval in, carry out linear scan continuously, and thus the surface potential of the corresponding linear part of testee O detected, shown in Figure 17 (c) testee.And, remaining in the part-time interval of moving distant positions at sensing head EDA, the grid voltage of crystal detection pipe continues to reset, and this is also shown in Figure 17 (c).
In the 3rd example, when sensing head EDA remains on when moving distant positions, to carry out linear scan continuously, and thus the surface potential of the corresponding linear part of testee is detected testee O, this process is shown in Figure 17 (d).And when sensing head EDA is positioned at when shifting near the position, the grid voltage of crystal detection pipe continues to reset, and this is also shown in Figure 17 (d).
In the 4th example, be arranged in the part-time interval of moving distant positions at sensing head EDA, carry out the linear scan to testee continuously, and thus the surface potential of the corresponding linear part of testee O is detected, this process is shown in Figure 17 (e).And, being arranged in the part-time interval that shifts near the position at sensing head EDA, the grid voltage of crystal detection pipe continues to reset, and this is also shown in Figure 17 (e).
The 6th optimum implementation
Figure 18 and 19 shows the 6th device for carrying out said of the present invention, and except the design variation of hereinafter pointing out, the device for carrying out said shown in this device for carrying out said and Figure 16 and 17 is similar.
Shown in Figure 18 (a), sensing head periodically moves between with respect to two positions of testee, it is shifted near and moves testee far away.Shown in Figure 18 (b), be arranged in each time interval that shifts near the position at sensing head, all testee is carried out linear scan, and thus the surface potential of the corresponding linear part of testee is detected, implement resetting of crystal detection tube grid voltage then.And be arranged in each time interval of moving distant positions at sensing head, and also all testee is carried out linear scan, and thus the surface potential of the corresponding linear part of testee is detected, implement resetting of crystal detection tube grid voltage then.
In this device for carrying out said, by its polarity of output signal periodic variation of sensing head output, shown in Figure 18 (c).
As shown in figure 19, this device for carrying out said includes and has movable contact to receive from the switch SW of the signal of sensing head output by terminal 9.At a 1-in the line-scanning period, the movable contact of switch SW is according to the control signal of delivering to switch SW by terminal 30, and is periodically mobile in primary importance, second place intercropping.When the moving contact of switch SW is positioned at first or during the second place, it contacts with the fixed contact " a " or the fixed contact " b " of switch SW respectively.The fixed contact of switch SW " a " is connecting the input of delay circuit IHDL, and this circuit can make input signal postpone a 1-line-scanning period.The fixed contact of switch SW " b " is connecting the input of polarity switch PRC.The output of delay circuit IHDL and polarity switch PRC is connected with the input of adder ADD2 respectively.The output of adder ADD2 is connecting lead-out terminal 10.
When the moving contact of switch SW and its fixed contact " b " when contacting, arrive polarity switch PRC by the present detection output signal of sensing head output by switch SW, and change its polarity by polarity switch PRC.Like this, the detectable signal through conversion has identical polarity with the delay detectable signal of delay circuit IHDL output.Switched detectable signal and the detectable signal that postponed be by adder ADD2 addition, and form the output signal that is applied to lead-out terminal 10.The detecting voltage of the output signal that this is total doubles the detecting voltage by sensing head output.
When the moving contact of switch SW and its fixed contact " a " when contacting, deliver to delay circuit IHDL by switch SW by the present detection output signal of sensing head output.This is surveyed output signal and postpones a 1-after the line-scanning period by delay circuit IHDL, and the delay output signal of output inputs to adder ADD2.
As mentioned above, will in the detection output signal of sensing head output, produce interference components by the drain leakage current of its grid of each crystal detection pipe.By contained interference components in this inhibit signal of delay circuit IHDL output have with the signal of exporting by polarity switch PRC in the contained opposite polarity of interference components.Therefore, this interference components will be disposed by adder ADD2, thereby make the surface potential that can accurately be reflected testee by the signal of adder ADD2 output.
The 7th optimum implementation
Referring to Figure 20, the device of implementing seventh embodiment of the invention comprises sensing head EDA, and this sensing head can output to detectable signal the fixed contact of the switch SW 2 among the signal processor SDA2 by lead-out terminal 1.
Testee O has it and distributes and the corresponding surface potential of a certain optical image.By suitable driving mechanism (not shown) mobile sensor head EDA above testee O, so that the surface of testee O is scanned.As hereinafter will as described in, sensing head EDA comprises a linear array of being made up of several sensing electrodes.When sensing head EDA remains on a certain position, with certain linear part of the corresponding testee O of sensing electrode array promptly by its scanning.After this one scan was finished, sensing head EDA was moved to the next position, to carry out next line scanning.Carry out successively to this line-scanning period property, all be scanned up to all surfaces of testee O.
A reference part VP is parallel to sensing head EDA and places, and stretches along the limit of testee O.Before the scanning to testee began, sensing head EDA scanned this reference part VP earlier.Power supply Vb
sMake reference part VP have a certain predetermined surface potential Vb, this electromotive force approximates the surface potential corresponding to the subregion of the testee O of optical image black region.
In the interim very first time, sensing head EDA scans reference part VP, and the moving contact of switch SW 2 contacts with its fixed contact " a ", thereby makes the detectable signal by sensing head EDA output be input to A/D converter ADC2.This detectable signal is converted to digital signal corresponding and is stored the memory LM2 that is expert at by transducer ADC2.Store the semaphore of this digital detection signal of the memory LM2 that is expert at corresponding to a line scanning.In this time interval, sensing head EDA scans reference part VP, so the detectable signal of storing among the memory LM2 that is expert at is reflecting and the corresponding signal level of optical image black region.
In the next time interval, sensing head EDA scan testee, and the moving contact of switch SW 2 contacts with its fixed contact " b ", thereby makes the detection output signal of being exported by sensing head EDA be input to the first input end of subtracter SVB2.D/A DAC2 the black numbers output signal by row memory LM2 output converts the analog signal of corresponding black video to, and it is imported second input of subtracter SUB2.Subtracter SUB2 deducts the signal of black video from this detectable signal, and the difference detectable signal that obtains is applied to lead-out terminal 10.The computing that deducts the black image signal from detectable signal can partly compensate the change of sensitivity of the sensing element of each sensing electrode that includes sensing head EDA.This advantage can illustrate by Figure 21, the different sensitivity that line α, β wherein and γ are representing each sensing element, by above-mentioned compensation way, the sensitivity curve of each sensing element for the corresponding surface potential Vb of optical image black region be same point.If do not carry out this compensation, will be different points with γ corresponding to each response characteristic α, β of the electromotive force Vb of black region.In Figure 21, characteristic point V
WThe corresponding surface potential of white portion in expression and the optical image.
As shown in figure 22, send into the first input end of multiplier MUL2 by lead-out terminal 10 by the signal of signal processor SDA2 output.Row memory LM3 stores the corresponding compensating signal of penalty coefficient of a cover and each sensing element.When compensating signal is input to second input of multiplier MUL2 successively from row memory LM3, with the signal input multiplier MUL2 that matches by signal processor SDA2 output.Multiplier MUL2 will be by the signal times of signal processor SDA2 output with the corresponding compensation signal, to realize the compensation completely to the sensing element change of sensitivity.Described sensing element comprises the sensing electrode of sensing head EDA.This advantage can be by finding out among Figure 23, and line α, β wherein and γ are representing the different sensitivity of each sensing element, compensate with above-mentioned full compensation method, can make it to form identical sensitivity characteristic curve.In Figure 23, characteristic point V
WExpression and the corresponding surface potential of optical image white portion, character K
α, K
βAnd K
γRepresent respectively and the penalty coefficient that is relevant to each sensing element of curve α, β and γ.Signal by multiplier MUL2 output inputs to lead-out terminal 11.
Penalty coefficient is that the signal of exporting when the reference testee with known surface electromotive force is scanned with sensing element is that the basis is measured.
As shown in figure 24, sensing head EDA includes several sensing electrodes ED
1-ED
n, these sensing electrodes are by connecting line l
1-l
nRespectively with crystal detection pipe DF
1-DF
nGrid be connected.
Crystal detection pipe DF
1-DF
nDrain electrode all be connected with power line V.Each crystal detection pipe DF
1-DF
nSource electrode be connected respectively to corresponding switching transistor SF
1-SF
nDrain electrode.Switching transistor SF
1-SF
nSource electrode all be connected to lead-out terminal 1.Load resistance R
lBe connected between lead-out terminal 1 and the ground.
Switching transistor SF
1-SF
nAs with crystal detection pipe DF
1-DF
nThe switch that is connected or is not connected with lead-out terminal 1.For each switching transistor SF
1-SF
n, when its grid received high level voltage or low level voltage, source electrode-drain path was conducting or not on-state.In other words, when its grid received high level voltage or low level voltage, corresponding switching transistor was conducting or not on-state respectively.
Each switching transistor SF
1-SF
nGrid be connected with each output of shift register SR respectively, and accept output signal P from shift register SR
1-P
nThe clock end of shift register SR is by clock input terminal 8 receive clock signal P
c, clock signal P
cWaveform and waveform shown in Figure 11 similar.
Similar with the device for carrying out said shown in Figure 10 and 11, by the signal P of shift register SR output
1-P
nResponse input clock signal P
cAnd be high level successively.Therefore, each switching transistor SF
1-SF
nWill be according to clock signal and conducting successively.
Sensing electrode ED
1-ED
nTo be similar to mode linear array shown in Figure 12.
The running of this device is as follows.Make sensing head EDA near testee O, and make sensing electrode ED
1-ED
nBe provided with facing to the surface of testee O.Electrostatic induction makes sensing electrode be in certain correspondent voltage, and this voltage corresponds respectively on the testee and sensing electrode ED
1-ED
nThe surface potential of corresponding part.Induced voltage is from sensing electrode ED
1-ED
nBy connecting line l
1-l
nBe transferred to corresponding crystal detection pipe DF respectively
1-DF
nGrid.
As mentioned above, switching transistor SF
1-SF
nWith conducting successively.Therefore, corresponding to each crystal detection pipe DF
1-DF
nThe voltage signal of grid voltage will pass through switching transistor SF successively
1-SF
nSource electrode-drain path by crystal detection pipe DF
1-DF
nSource electrode be transferred to lead-out terminal 1.Like this, the output signal that produces at lead-out terminal 1 is time to time change, and corresponding to the distribution of the surface potential of this linear part of testee.
The 8th optimum implementation
Figure 25 shows the present invention's the 8th device for carrying out said, except include reference zone VP in testee O
aIn addition, this device for carrying out said is similar to the device for carrying out said shown in Figure 20-24, and described reference zone VP
aHave and the reference part VP identical functions in the device for carrying out said shown in Figure 20-24.
The 9th optimum implementation
Figure 26 shows the present invention's the 9th device for carrying out said, and the scene scioptics L of object Q focuses on the recording head ReH, so that at disc-shape recoding medium D
rLast generation resembles with the corresponding charge latent image of object scene.
Recording medium D
rComprise that electrode E becomes parts CHL with the charge latent image pictograph.Electrode E is as recording medium D
rSubstrate.Parts CHL is made by the good material of insulation.Recording medium D
rCan rotate with respect to axle 70.
Recording head ReH has by substrate of glass or claims substrate BP5, transparency electrode E
tLayer structure with photoelectric conductor layer PCL formation.Power supply Vb is connected recording medium D
rElectrode E and electrode E
tBetween, so that at electrode E
tAnd the predetermined electric field of generation between the E.
When on the photoelectric conductor layer PCL of the L shaped one-tenth of video scioptics at recording head ReH of object Q, the resistance of photoelectric conductor layer PCL will change with the video of object Q, thereby can be at recording medium D
rThe corresponding charge latent image of video that go up to form with object Q of parts CHL resemble.Should be noted that recording medium D
rThe shape that also can have other, for example banded, lamellar or card-like.
Be formed on recording medium D
rOn charge latent image resemble by sensing head EDA(not shown in Figure 26) detect, this sensing head has and the similar structure of circuit structure shown in Figure 24.As shown in figure 27, sensing head EDA has several sensing electrodes ED that is formed on the substrate BP6
1-ED
nWith several crystal detection pipes DF
1-DF
nEach sensing electrode ED
1-ED
nBetween distance equate and be arranged in a row.Crystal detection pipe DF
1-DF
nBetween distance also equate and line up and sensing electrode ED
1-ED
nThe row that row parallels.Crystal detection pipe DF
1-DF
nConstitute by floating boom utmost point metal-oxide-semiconductor field effect transistor.At each sensing electrode ED
1-ED
nWith crystal detection pipe DF
1-DF
nBetween be shield member SA.Sensing electrode ED
1-ED
n, crystal detection pipe DF
1-DF
nTopped firmly with shield member SA with the insulating protective layer (not shown) that silicon dioxide constitutes, so that it separates with atmosphere closely.
As shown in figure 28, sensing head EDA near and facing to recording medium D
rIt is corresponding to recording medium D that electrostatic induction makes the voltage of sensing electrode ED
rParts CHL on a certain voltage of latent image elephant.This induced potential is carried successively by crystal detection pipe DF, surveys output signal to obtain seasonal effect in time series.Shield member SA ground connection.Shield member SA is providing electrostatic screen between each sensing electrode ED, thereby can guarantee the high-resolution of sensing head EDA.
The advantage of this device for carrying out said is to be used as the use of the floating boom utmost point MOS transistor of crystal detection pipe DF, makes to save the resetting means that acts on crystal detection pipe DF grid.
As shown in figure 29, shield member SA is connected with the binding post 11 that receives adjustable voltage.Sensing electrode ED is by parasitic capacitance C
sSA is connected with shield member.Parasitic capacitance C
dBe present between the grid and drain electrode of crystal detection pipe DF.Parasitic capacitance C
gBe connected the grid of crystal detection pipe DF.The grid of crystal detection pipe DF is connected with binding post 11 with shield member SA by sensing electrode ED, parasitic capacitance Cs.Therefore, the grid voltage of crystal detection pipe DF depends on the voltage of terminal 11.The voltage of selection terminal 11 that should be suitable is so that be under the effect of suitable bias voltage of the reliability service that can guarantee this transistor DF the floating boom utmost point of floating boom gated transistors DF.
Be provided with under the occasion of a plurality of shield member SA for each sensing electrode ED, the voltage that puts on each shield member SA is independent adjustable.Under this class situation as shown in figure 30, correspond to sensing electrode ED by regulating to put on respectively
1And ED
2The mode of voltage of shield member SA, can make crystal detection pipe DF
1And DF
2Grid bias proofread and correct respectively and be suitable grid bias separately.
The tenth optimum implementation
Figure 31 shows the present invention's the tenth device for carrying out said, except terminal 110 and sensing electrode ED are by parasitic capacitance C
sOutside being connected to each other, this device for carrying out said is similar to the device for carrying out said shown in Figure 26-30.
The 11 optimum implementation
Figure 32 shows the present invention's the 11 device for carrying out said, and the variation in some designs of hereinafter pointing out, the device for carrying out said shown in this device for carrying out said and Figure 26-30 is similar.
In device for carrying out said shown in Figure 32, row memory LM5 stores and surveys floating gate MOS field-effect transistor DF
1-DF
nThe relevant data of suitable grid bias separately so that can guarantee each transistor DF
1-DF
nReliability service.Detectable signal is by switching transistor SF
1-SF
nSuccessively by each crystal detection pipe DF
1-DF
nBe transferred to lead-out terminal 1.At detectable signal by crystal detection pipe DF
1-DF
nWhen transmitting successively, corresponding grid bias data outputs to D/A DAC5 from row memory LM5.This grid bias data converts correspondent voltage to by transducer DAC5, and imposes on shield member SA by amplifier AMP5.Consequently, the grid bias data of the crystal detection pipe that transmitted at present by its detection signal of the voltage that is added in shield member SA is determined.Therefore, when detectable signal by crystal detection pipe DF
1-DF
nWhen transferring out, crystal detection pipe DF
1-DF
nGrid just be under the suitable grid bias respectively.
The 12 optimum implementation
Figure 33 shows the present invention's the 12 device for carrying out said, and the scene scioptics L of object Q focuses on the recording head ReH, so that at disc-shape recoding medium D
rLast formation resembles corresponding to the charge latent image of the scene of object Q.
Recording medium D
rComprise that electrode E becomes parts CHL with the charge latent image pictograph.Electrode E is as recording medium D
rSubstrate.Parts CHL is made by the good material of insulation.Recording medium D
rCan rotate with respect to axle 70.As shown in figure 34, as recording medium D
rWhen direction R rotates, the electric charge video of object Q be recorded in successively different region R Z1, the RZ2 of recording medium ... in.
Recording head ReH has by substrate of glass or claims substrate BP5, colored narrow-band filter F, transparency electrode E
t, the layer structure that constitutes of photoelectric conductor layer PCL.Power supply Vb is connected electrode E and the electrode E of recording medium Dr
tBetween, so that at electrode E
tAnd the predetermined electric field of generation between the E.
When the video of object Q by chromatic filter F by lens on the photoelectric conductor layer PCL of L shaped one-tenth at recording head ReH the time, the resistance of photoelectric conductor layer PCL will change with the video of object Q, thus at recording medium D
rThe corresponding charge latent image of video that go up to form with object Q of parts CHL resemble.Should be noted that recording medium D
rCan also be other shape, for example banded, lamellar or card-like.
As shown in figure 35, chromatic filter F has several aggregates of being made up of parallel colour band red, green, blue look.Corresponding with the configuration of the colored colour band of filter F, at recording medium D
rThe charge latent image of last formation resemble also be separated into by respectively with red, green, the corresponding herring bone Z(R of blue look colour band), Z(G), Z(B) several groups of forming, as shown in figure 36.
Be formed on recording medium D
rOn charge latent image resemble by sensing head EDA and detect, this sensing head has the structure with structure similar shown in Figure 32.As shown in figure 36, sensing head EDA is being parallel to herring bone Z(R), Z(G), Z(B) direction X go up recording medium D
rCarry out linear scan.During this linear scan, corresponding to this herring bone Z(R), Z(G), Z(B) one group of danger signal, green, blue chrominance signal be output.After this linear scan was finished, sensing head EDA will move along the direction Y perpendicular to direction X, then to next group herring bone Z(R), Z(G), Z(B) begin to carry out linear scan.Repeat this scanning process, up to recording medium D
rActive surface by fully scanning finish.To recording medium D
rScan period, danger signal, green, blue chrominance signal will be in turn, periodically exported by sensing head EDA.
As shown in figure 37, signal processor comprises the switch SW 10 with moving contact V10, and the signal of being exported by sensing head EDA is applied on this contact by terminal 13.The fixed contact of switch SW 10 " a ", " b ", " c " are connecting respectively and are going memory LM10, LM20, LM30.Moving contact V10 is connected with contact " a ", " b ", " c " in a linear scan cycle successively, so as danger signal, green, blue chrominance signal to be assigned with and respectively storage be expert among memory LM10, LM20, the LM30.Danger signal, green, blue chrominance signal are transferred out by row memory LM10, LM20, LM30 by lead-out terminal 14,15,16 respectively.Danger signal, green, the blue chrominance signal that transfers out by lead-out terminal 14,15,16 will be combined into brightness signal Y 1, Y2, Y3 ... these luminance signals correspond to herring bone Z(R), Z(G), Z(B) different set, referring to shown in Figure 36.
The 13 optimum implementation
Figure 38 shows the 13 device for carrying out said of the present invention, and the variation in some designs of hereinafter pointing out, the device for carrying out said shown in this device for carrying out said and Figure 33-37 is similar.
In device for carrying out said shown in Figure 38, each sensing electrode ED of sensing head EDA is corresponding to each herring bone Z(R), Z(G), Z(B) and arrange.Sensing head EDA is along perpendicular to herring bone Z(R), Z(G), Z(B) direction X go up recording medium D
rScan.During this linear scan, danger signal, green, blue chrominance signal are in turn and periodically by sensing head EDA output, and these signals are respectively corresponding to herring bone Z(R), Z(G), Z(B).After this linear scan was finished, sensing head EDA moved along the direction Y perpendicular to direction X, and begins next linear scan.Repeat this scanning process, have to recording medium D
rActive surface by fully scanning finish.
As shown in figure 39, signal processor comprises the switch SW 20 with moving contact V20, and the signal of being exported by sensing head EDA is applied to this moving contact V20 by terminal 13.The fixed contact of switch SW 20 " a ", " b ", " c " are connected with pixel memory PM10, PM20, PM30 respectively.Moving contact V20 contacts with fixed contact " a ", " b ", " c " in a picture element scan cycle successively, so that make danger signal, green, blue chrominance signal be assigned with and be stored in respectively among pixel memory PM10, PM20, the PM30.Danger signal, green, blue chrominance signal are transferred out by each pixel memory PM10, PM20, PM30 by lead-out terminal 14,15,16 respectively.Danger signal, green and the blue chrominance signal that transfers out by lead-out terminal 14,15,16 be combined into brightness signal Y 1, Y2, Y3 ... these luminance signals correspond to each herring bone Z(R), Z(G), Z(B) different set, referring to shown in Figure 38.
The 14 optimum implementation
Figure 40 shows the 14 device for carrying out said of the present invention, and some in the design of hereinafter pointing out changed, the device for carrying out said shown in this device for carrying out said and Figure 33-37 was similar.
Device for carrying out said shown in Figure 40 adopts optical color separator CSA to replace chromatic filter F(referring to Figure 33).Optical color separator CSA is arranged between lens L and the recording head ReH.
Shown in Figure 40-42, optical color separator CSA includes and is positioned at prism P
rAnd P
bBetween dichronic mirror or colour splitting prism D
p, and prism P
rAnd P
bHas total reflection surface M separately
rAnd M
bColour splitting prism D
pComprise a reflect red and conduct the R surfacing of green glow and blue streak or minute surface and a reflection blue streak and conduct the B surfacing or the minute surface of green glow and ruddiness.The R surfacing is vertical mutually with the B surfacing.
Incide the colour splitting prism D of optical color separator CSA when light from object Q
pThe time, the green component of incident light is by colour splitting prism D
pAnd video form the surface area I
gThe green image of last formation object Q.The red component of this light is by colour splitting prism D
pR surfacing reflection, then by prism P
rTotal reflection surface M
rReflection, and form on the surface and green area I at video
gAdjacent areas I
rThe middle red video that forms object Q.The blue colouring component of incident light is by colour splitting prism D
pB surfacing reflection, then by the total reflection surface Mb reflection of prism Pb, and form on the surface and green area I at video
gForm the blue look video of object Q among the adjacent areas Ib.Therefore, as shown in figure 43, at recording medium D
rRegion R separated from one another, G, B in be formed with respectively with red, green, blue three relevant charge latent images and resemble.
As shown in Figure 41, whole propagation distances of ruddiness and blue streak are than the big additional distance XX of whole propagation distances of green glow, and the optical axis of ruddiness imaging system and blue streak imaging system also is separated with the optical axis of green glow imaging system, and its deviant is a10.By suitably selecting prism P
rAnd P
bLength and make prism P
rAnd P
bThe refraction coefficient of material, deviant a10 and additional distance XX are equated.
Sensing head EDA along with the perpendicular direction X of the direction Y of configuring area R, G, B on to recording medium D
rCarry out linear scan.During this linear scan, correspond to one group of red, green, blue signal and export by sensing head EDA.After this linear scan is finished,, and begin to carry out next linear scan along direction Y mobile sensor head EDA.Should repeat this scanning process, up to recording medium D
rActive surface by fully scanning finish.Under situation shown in Figure 43, region R, G, B are scanned successively, so that danger signal, green, blue chrominance signal are exported successively by sensing head EDA.
The 15 optimum implementation
Figure 44 shows the 15 device for carrying out said of the present invention, and the variation in some designs of hereinafter pointing out, the device for carrying out said shown in this device for carrying out said and Figure 40-43 is similar.
In device for carrying out said shown in Figure 44, sensing head EDA along on the direction X of configuring area R, G, B to recording medium D
rCarry out linear scan.During this linear scan, danger signal, green, blue chrominance signal are in turn, periodically export from sensing head EDA.After this linear scan is finished, mobile sensor head EDA on perpendicular to the direction Y of direction X, and begin to carry out next linear scan.Should repeat this scanning process, up to fully to recording medium D
rThe active surface been scanned.
Claims (5)
1, a kind of video sensing device comprises:
Recording medium;
Be used on this recording medium, producing the device of the charge latent image elephant of an object;
Sensing electrode;
Be used on this sensing electrode, producing device corresponding to the electrostatic induction voltage of the latent image elephant on the described recording medium;
Be used for producing according to the voltage on the described sensing electrode device of image signal, this image signal generation device comprises a floating boom utmost point field-effect transistor, and its grid is connected with described sensing electrode;
Make the described sensing electrode can be to the device of described scanned;
It is characterized in that this video sensing device also comprises:
Be used for obtaining the device of colour signal from described image signal; With
Place the color separation device between described recording medium and the described object.
2, video sensing device as claimed in claim 1 is characterized in that, described color separation device is chromatic filter F or color separator prism assemblies CSA.
3, scene sensing device as claimed in claim 1, it is characterized in that, described charge latent image resembles generation device and is included in the device that produces several charge latent image elephants of described object on the variant zone of described recording medium, and these charge latent images resemble respectively the different colored video corresponding to this object.
4, video sensing device as claimed in claim 1 is characterized in that, this device also comprises:
The voltage that several are arranged in a row, that it bore is the sensing electrode of the corresponding electrostatic induction voltage of described body surface electromotive force that showed with a certain optical image, and each sensing electrode scans this object;
Be used for each output signal is transferred on the general output line to obtain the device corresponding to the time series output signal of a line scanning successively by described each sensing electrode;
Its surface potential is corresponding to the reference part of the black region of described optical image, and this reference part is also by described each sensing electrode scanning;
Be used to store device as with reference to output signal signal, when scanning described reference part by described each sensing electrode; With
Be used for reading the device that described reference signal and the output signal when scanning described object by each sensing electrode deduct this reference signal.
5, video sensing device as claimed in claim 4, it is characterized in that, this device also comprises the device that is used to store the data-signal that is reflecting described each sensing electrode operation characteristic, and is used for this data-signal with by the signal multiplication of the subtracter output device with the influence that variation was produced that compensates described each sensing electrode operation characteristic.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63113305A JPH01284769A (en) | 1988-05-10 | 1988-05-10 | Generating device for electric signal corresponding to surface potential distribution |
| JP113305/88 | 1988-05-10 | ||
| JP129847/88 | 1988-05-27 | ||
| JP63185101A JPH0235639A (en) | 1988-07-25 | 1988-07-25 | Recording and reproducing device by latent charge image |
| JP185101/88 | 1988-07-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1037769A CN1037769A (en) | 1989-12-06 |
| CN1029065C true CN1029065C (en) | 1995-06-21 |
Family
ID=26452294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 89104299 Expired - Fee Related CN1029065C (en) | 1988-05-10 | 1989-05-09 | Apparatus for detecting distribution of electric surface potential |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1029065C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100549706C (en) * | 2004-06-08 | 2009-10-14 | 佳能株式会社 | Electric potential measuring instrument and image forming apparatus |
| CN105232475A (en) * | 2015-11-19 | 2016-01-13 | 哈尔滨圣吉药业股份有限公司 | A kind of piribedil sustained-release pellets and preparation method thereof |
| CN110556305A (en) * | 2019-08-09 | 2019-12-10 | 复旦大学 | A Surface Potential Measurement Method Based on Extended Gate Transistor Structure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103376368B (en) * | 2012-04-27 | 2016-09-07 | 海洋王（东莞）照明科技有限公司 | A kind of electric field intensity detector |
-
1989
- 1989-05-09 CN CN 89104299 patent/CN1029065C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100549706C (en) * | 2004-06-08 | 2009-10-14 | 佳能株式会社 | Electric potential measuring instrument and image forming apparatus |
| CN105232475A (en) * | 2015-11-19 | 2016-01-13 | 哈尔滨圣吉药业股份有限公司 | A kind of piribedil sustained-release pellets and preparation method thereof |
| CN110556305A (en) * | 2019-08-09 | 2019-12-10 | 复旦大学 | A Surface Potential Measurement Method Based on Extended Gate Transistor Structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1037769A (en) | 1989-12-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1282118C (en) | Reading appts. | |
| CN1255870C (en) | Optical signal detecting method | |
| CN1232938C (en) | Reference voltage generating circuit and generating method, display drive circuit and display | |
| CN1424639A (en) | Input devices and input-output devices | |
| CN1263291C (en) | Image reading apparatus and its driving method | |
| CN1183390C (en) | Ray detector | |
| CN1213394C (en) | Shift registers and electronics | |
| CN1137463C (en) | Image display device and electronic apparatus | |
| CN1940841A (en) | Display device | |
| JP4024642B2 (en) | Image reading apparatus and image reading method | |
| CN1612200A (en) | display device | |
| CN1646937A (en) | Spatial information detecting device using intensity-modulated light | |
| CN1224511A (en) | Liquid crystal display device with image reading function, image reading method and manufacturing method | |
| CN1437084A (en) | Reference voltage generating circuit and method, display drive circuit and display device | |
| CN1659447A (en) | Light receiving device with controllable sensitivity and spatial information detecting apparatus using the same | |
| CN101075053A (en) | Image display device | |
| CN1029065C (en) | Apparatus for detecting distribution of electric surface potential | |
| JP2005173318A (en) | Liquid crystal display | |
| CN1319257A (en) | Photosensor and photosensor system | |
| CN1879402A (en) | Solid-state imaging device and camera system | |
| CN1234579A (en) | Picture pick-up device | |
| US5065102A (en) | Apparatus for detecting distribution of electric surface potential | |
| CN1198251C (en) | Matrix type display | |
| CN101064789A (en) | Imaging device, and method for driving solid-state imaging device | |
| US5268763A (en) | Apparatus for recording a charge latent image on a medium and for producing color signals from the charge latent image |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |