CN102868303B - Synchronous rectifier - Google Patents
Synchronous rectifier Download PDFInfo
- Publication number
- CN102868303B CN102868303B CN201210293006.3A CN201210293006A CN102868303B CN 102868303 B CN102868303 B CN 102868303B CN 201210293006 A CN201210293006 A CN 201210293006A CN 102868303 B CN102868303 B CN 102868303B
- Authority
- CN
- China
- Prior art keywords
- switch
- signal
- transformer
- transistor
- synchronous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Rectifiers (AREA)
- Dc-Dc Converters (AREA)
Abstract
本发明涉及同步整流器,所公开的实施例涉及一种减少电源功耗的设备和方法。提供一种设备,该设备包括:元件(214),用于当该连接元件导通时,将第一信号(S2)连接到参考电平(接地电势);元件(202,204),用于在第二信号(S3)的周期的一部分持续时间内将所述连接元件置于导通状态;以及元件(206),用于响应所述第二信号的幅度,改变所述连接元件的导通持续时间。
The present invention relates to synchronous rectifiers, and the disclosed embodiments relate to an apparatus and method for reducing power consumption in a power supply. A device is provided, comprising: an element (214) for connecting a first signal (S2) to a reference level (ground potential) when the connecting element is conducting; elements (202, 204) for placing said connection element in a conducting state for a duration of a portion of a period of a second signal (S3); and an element (206) for varying the conduction of said connection element in response to the magnitude of said second signal duration.
Description
本申请是申请日为2005年9月28日,申请号为200580051717.8,发明名称为“同步整流器”的发明专利申请的分案申请。This application is a divisional application of an invention patent application with an application date of September 28, 2005, an application number of 200580051717.8, and an invention title of "Synchronous Rectifier".
技术领域 technical field
本发明一般地涉及电源领域,尤其涉及在开关电源中使用同步整流。This invention relates generally to the field of power supplies, and more particularly to the use of synchronous rectification in switching power supplies.
背景技术 Background technique
如图1所示,典型的开关电源(SMPS)包括:初级侧部件150和次级侧部件。初级侧(又称作“热侧”)部件包括开关控制器106、开关金属氧化物半导体(MOSFET)108、MOSFET散热器110、电流感测电阻器112、涌流抑制电容器114、具有初级绕组120和次级绕组118的变压器116、整流二极管102、滤波电容器104以及光隔离器126。次级或“冷侧”部件包括次级变压器绕组122和124、整流二极管128、136和各自的散热器130、138,以及滤波电容器132和134。整个开关电源由未稳压电压源100供电。控制器106向MOSFET 108提供驱动信号VD,以在变压器116的初级绕组120中产生电流。变压器116的次级绕组118提供电压源,当分别被二极管102和电容器104整流并滤波时,向控制器106提供电源电压VDD。反馈信号VFB由经过整流并滤波的次级电源+12V产生,并通过光隔离器126反馈到控制器106,从而建立起反馈回路,以控制MOSFET 108的导通和截止。通过在控制器106中对反馈信号VFB和参考值进行比较,并且响应于反馈信号与参考电平之间的差而进行MOSFET108的导通周期的变化,可实现对SMPS中操作电平的调节。电阻器112感测在MOSFET 108中流动的作为电流模式控制器106的电流反馈信号的初级电流。使用电流模式控制,防止了在过载条件下过量电流从开关电源中流出。通过二极管128和136分别对来自变压器116的次级绕组122和124的信号进行整流,并且经电容器132和134分别滤波后得到了调节后的输出电压+6.5V和+12V。对跨过绕组122和124的所获得的信号的整流可通过在地与电源输出之间与各自的绕组串联的二极管来完成。在所述的典型SMPS中,其中一个二极管,128,被设置为其阴极连接其特定电源的正输出,从而使得二极管128的阳极和阴极都远离地。在示例性的+12V供电中,二极管136被设置为其阳极接地。在这种示例性开关电源中所述的这种整流器中,通常,低效的主要原因是跨过整流二极管的电压降。在更高的电源中,由于跨过整流二极管的电压降造成的低效可能很严重,因此需要散热器和可能的积极措施,例如强制空气冷却。As shown in FIG. 1 , a typical switched mode power supply (SMPS) includes: a primary side component 150 and a secondary side component. Primary side (also referred to as "hot side") components include switch controller 106, switching metal oxide semiconductor (MOSFET) 108, MOSFET heat sink 110, current sense resistor 112, inrush current suppression capacitor 114, with primary winding 120 and Transformer 116 of secondary winding 118 , rectifier diode 102 , filter capacitor 104 and opto-isolator 126 . Secondary or “cold side” components include secondary transformer windings 122 and 124 , rectifier diodes 128 , 136 and respective heat sinks 130 , 138 , and filter capacitors 132 and 134 . The entire switching power supply is powered by an unregulated voltage source 100 . Controller 106 provides drive signal V D to MOSFET 108 to generate current in primary winding 120 of transformer 116 . Secondary winding 118 of transformer 116 provides a voltage source that, when rectified and filtered by diode 102 and capacitor 104 , respectively, provides a supply voltage V DD to controller 106 . The feedback signal V FB is generated by the rectified and filtered secondary power supply +12V, and fed back to the controller 106 through the optical isolator 126 , thereby establishing a feedback loop to control the on and off of the MOSFET 108 . Adjustment of the operating level in the SMPS is achieved by comparing the feedback signal V FB with a reference value in the controller 106 and varying the conduction period of the MOSFET 108 in response to the difference between the feedback signal and the reference level . Resistor 112 senses the primary current flowing in MOSFET 108 as a current feedback signal for current mode controller 106 . Using current mode control, excessive current is prevented from flowing from the switching power supply during overload conditions. The signals from secondary windings 122 and 124 of transformer 116 are rectified by diodes 128 and 136 respectively and filtered by capacitors 132 and 134 respectively to obtain regulated output voltages of +6.5V and +12V. Rectification of the resulting signal across windings 122 and 124 may be accomplished by diodes in series with the respective windings between ground and the power supply output. In the typical SMPS described, one of the diodes, 128, is arranged with its cathode connected to the positive output of its particular power supply, so that both the anode and cathode of diode 128 are remote from ground. In the exemplary +12V supply, diode 136 is configured with its anode connected to ground. In rectifiers of the type described in this exemplary switching power supply, typically the main source of inefficiency is the voltage drop across the rectifying diodes. In higher supplies, the inefficiency due to the voltage drop across the rectifier diodes can be severe, requiring a heat sink and possibly active measures such as forced air cooling.
为了提高整流器的效率,晶体管(通常是MOSFET)可用作低电压降开关,以代替二极管。这种技术被称作同步整流。同步整流要求对同步整流器的驱动进行控制,以在被整流的信号的适当部分使MOSFET导通或截止。通常使用集成电路控制器来控制MOSFET的导通。这些集成电路,例如ST微电子STS-R3或者Anachip AP436,价格有些贵,并且需要附加的4到8个外部部件。这些IC通常包括时钟产生电路以及其它复杂的方法来确定同步整流器MOSFET的导通/截止控制。本发明包括更简单的控制电路,可使用分立的部件低成本地实现开关电源中的同步整流。To increase the efficiency of the rectifier, a transistor (usually a MOSFET) can be used as a low voltage drop switch instead of a diode. This technique is called synchronous rectification. Synchronous rectification requires controlling the drive to the synchronous rectifiers to turn the MOSFETs on or off at the appropriate portion of the signal being rectified. Typically an integrated circuit controller is used to control the conduction of the MOSFET. These ICs, such as the ST Microelectronics STS-R3 or the Anachip AP436, are somewhat expensive and require an additional 4 to 8 external components. These ICs often include clock generation circuits and other complex methods to determine the on/off control of the synchronous rectifier MOSFETs. The present invention includes a simpler control circuit, and can implement synchronous rectification in a switching power supply at low cost using discrete components.
发明内容 Contents of the invention
下面提出与本发明最初要求的范围相当的一些方案;但是本发明可包含在下面没有提出的多种方案。Some aspects commensurate with the originally claimed scope of the present invention are set forth below; however, the present invention may encompass various aspects not set forth below.
所公开的实施例涉及一种设备,该设备包括:第一器件,其可以是晶体管,被配置为当该第一器件导通时,将第一信号连接到参考电平;第二器件,其可以是微分器或者高通滤波器,并响应可与第一信号异相的第二信号,所述第二器件被配置为在所述第二信号的周期的一部分内控制所述第一器件的导通;以及检测器,其可以是二极管峰值检测器,并响应所述第二信号的幅度,所述检测器被配置为改变所述第一器件的导通持续时间。在这种设备中,检测器可响应于所述第二信号的幅度的增加,减少所述第一器件的导通持续时间。The disclosed embodiments relate to an apparatus comprising: a first device, which may be a transistor, configured to connect a first signal to a reference level when the first device is turned on; a second device, which may be a differentiator or a high-pass filter and is responsive to a second signal which may be out of phase with the first signal, the second device being configured to control the conduction of the first device for a fraction of the period of the second signal and a detector, which may be a diode peak detector, configured to vary the on-duration of the first device in response to the magnitude of the second signal. In such an apparatus, the detector may reduce the conduction duration of the first device in response to an increase in the magnitude of the second signal.
另一实施例包括:用于当该连接元件导通时将第一信号连接到参考电平的元件;用于在第二信号的周期的一部分持续时间内将所述连接元件置于导通状态的元件;以及用于响应所述第二信号的幅度改变所述连接元件的导通持续时间的元件。Another embodiment comprises: means for connecting the first signal to a reference level when the connecting element is conducting; for placing said connecting element in a conducting state for a duration of a portion of a period of the second signal and an element for varying the conduction duration of the connecting element in response to the magnitude of the second signal.
再一实施例是一种方法,该方法包括以下步骤:通过器件的导通,使第一信号连接到参考电平;对第二信号进行微分;响应于所述微分后的第二信号,控制所述器件的导通;并且响应于所述第二信号的幅度,改变所述器件的导通持续时间。这种方法的变型可包括:响应所述第二信号的幅度的增加,减少所述器件的导通持续时间。Yet another embodiment is a method comprising the steps of: connecting a first signal to a reference level by turning on a device; differentiating a second signal; and, in response to said differentiated second signal, controlling turning on of the device; and varying the duration of conduction of the device in response to the magnitude of the second signal. A variation of this method may include reducing the conduction duration of the device in response to an increase in the magnitude of the second signal.
附图说明 Description of drawings
下面结合附图详细描述本发明的实施例,各附图中相似的元件采用相同的附图标记:Embodiments of the present invention are described in detail below in conjunction with the accompanying drawings, and similar elements in each of the accompanying drawings use the same reference numerals:
图1是典型的开关电源的方框图;Figure 1 is a block diagram of a typical switching power supply;
图2是本发明实施例的示意图;Fig. 2 is the schematic diagram of the embodiment of the present invention;
图3是主开关MOSFET(108)的漏极电压的代表性波形;以及Figure 3 is a representative waveform of the drain voltage of the main switching MOSFET (108); and
图4示出本发明实施例中同步整流器MOSFET的漏极电压和栅极电压的代表性波形。FIG. 4 shows representative waveforms of drain voltage and gate voltage of a synchronous rectifier MOSFET in an embodiment of the present invention.
具体实施方式 Detailed ways
图2所示的分立控制电路的实施例满足对低成本、同步整流器控制器的需要。图2示出在电子设备中应用的代表性开关电源。初级侧电路150是一种典型的开关电源,为本领域技术人员所熟知,并与前述的电源相似。开关变压器116具有多个次级绕组122和124,以获得不同的电源电压。二极管128在该系统中用作常规的整流器。对于+6.5V供电使用该高端整流器有双重目的:对来自绕组122的信号S3进行整流以产生+6.5V的供电,并且因此,在二极管128阳极的AC信号S3可用于获得驱动同步整流器MOSFET 214的开关控制信号。通过控制MOSFET的导通时间使导通与脉冲波形的期望部分一致,可将MOSFET晶体管用作整流器(同步整流)。由于MOSFET的电压降甚至比肖特基二极管都要低很多,所以能够提高电源的效率。大多数情况下,当采用同步整流时,可去除通常用于冷却二极管的大散热器。在图2所示的示例性实施例中,MOSFET 214被设置为其源极连接次级侧的接地电势。这种配置使得向MOSFET 214产生驱动信号变简单。根据信号S3获得用于同步整流器214的栅极驱动的控制电压。脉冲信号S3的极性与出现在MOSFET 214漏极的信号S2的极性相反。通过对绕组122和124的相位调整来确定这种相位反转,相位反转后使得信号S3的极性为信号S2处于最大负电平时导通MOSFET的栅极所需的相位。当信号S2处于最大负电平时MOSFET 214的漏极到源极的导通将信号S2箝位于接地电势,从而将信号S2整流得到+12V的输出。控制器106被设计为使得信号S2和S3可具有可变的占空因数(duty cycle);并且信号S3的正部分以更高的线电压在持续时间内增加。结果,必须采取措施缩短MOSFET 214栅极的脉冲的持续时间,以向MOSFET提供合适的导通时间,从而保证MOSFET 214仅当信号S2处于负电平时导通。电容器202和电阻器204构成高通滤波器,该高通滤波器对信号S3的波形进行微分,以产生MOSFET 214栅极的驱动波形。对波形的微分有助于缩短MOSFET 214的导通时间,使得MOSFET 214当其漏极电压为负时或者之后导通,而当其漏极电压升高时或者之前截止。低功率(与诸如二极管128的传统整流器二极管相比)二极管136在信号S2的负偏移期间导通,在此期间,由于对MOSFET 214的栅极驱动时间间隔可能短于信号S2的负偏移的持续时间,所以MOSFET可能不导通。以上对于二极管136所述的功能也可以通过MOSFET 214的内部寄生二极管执行。二极管206和电容器208对信号S3进行整流,以获得与未稳压电压源100的值成比例(并与AC线输入电压成比例)的负偏压。负偏压增加时,MOSFET 214栅极的平均电压被降低,从而减少MOSFET的导通时间。由电阻器210和204构成的分压器对由二极管206和电容器208获得的负偏压进行调整,以建立加在栅极驱动的负偏压的期望范围。MOSFET 214栅极的这个负偏压防止了高线电压时的过导通(以及损耗增加)。电阻器200对于二极管206形成的负供电提供电流限制。电阻器212减少MOSFET 214栅极的驱动电压的上升时间,从而最小化由于快速开关暂态而引起的辐射噪声。The embodiment of the discrete control circuit shown in FIG. 2 satisfies the need for a low cost, synchronous rectifier controller. Figure 2 shows a representative switching power supply used in electronic equipment. The primary side circuit 150 is a typical switching power supply, which is well known to those skilled in the art, and is similar to the aforementioned power supplies. The switching transformer 116 has multiple secondary windings 122 and 124 to obtain different supply voltages. Diode 128 acts as a conventional rectifier in this system. The use of this high - side rectifier for the +6.5V supply serves a dual purpose: to rectify the signal S3 from winding 122 to generate the +6.5V supply, and thus, the AC signal S3 at the anode of diode 128 can be used to drive the synchronous rectifier MOSFET 214 switch control signal. MOSFET transistors can be used as rectifiers by controlling the conduction time of the MOSFET to coincide with the desired portion of the pulse waveform (synchronous rectification). Since the voltage drop of the MOSFET is much lower than even the Schottky diode, the efficiency of the power supply can be improved. In most cases, when synchronous rectification is used, the large heat sinks normally used to cool the diodes can be eliminated. In the exemplary embodiment shown in FIG. 2, MOSFET 214 is set to have its source connected to the ground potential of the secondary side. This configuration simplifies generating drive signals to MOSFET 214 . A control voltage for gate driving of the synchronous rectifier 214 is obtained according to the signal S3. The polarity of pulse signal S3 is opposite to the polarity of signal S2 appearing at the drain of MOSFET 214 . This phase inversion is determined by phase adjustment of windings 122 and 124 such that the polarity of signal S3 is the phase required to turn on the gate of the MOSFET when signal S2 is at its most negative level. Drain - to - source conduction of MOSFET 214 when signal S2 is at its maximum negative level clamps signal S2 at ground potential, thereby rectifying signal S2 to an output of + 12V. The controller 106 is designed such that the signals S2 and S3 can have a variable duty cycle ; and the positive part of the signal S3 increases for a duration with a higher line voltage. As a result, measures must be taken to shorten the duration of the pulses at the gate of MOSFET 214 to provide a suitable on-time for the MOSFET to ensure that MOSFET 214 is only turned on when signal S2 is at a negative level. Capacitor 202 and resistor 204 form a high-pass filter that differentiates the waveform of signal S 3 to produce a drive waveform for the gate of MOSFET 214 . Differentiating the waveform helps shorten the on-time of MOSFET 214 so that MOSFET 214 turns on when its drain voltage is negative or later, and turns off when its drain voltage rises or before. Low power (compared to conventional rectifier diodes such as diode 128) diode 136 conducts during negative excursions of signal S2, during which time intervals due to gate drive to MOSFET 214 may be shorter than the negative excursion of signal S2. duration of the offset, so the MOSFET may not turn on. The functions described above for diode 136 may also be performed by the internal parasitic diode of MOSFET 214 . Diode 206 and capacitor 208 rectify signal S3 to obtain a negative bias proportional to the value of unregulated voltage source 100 (and proportional to the AC line input voltage). As the negative bias increases, the average voltage at the gate of MOSFET 214 is lowered, thereby reducing the MOSFET's on-time. A voltage divider formed by resistors 210 and 204 adjusts the negative bias obtained by diode 206 and capacitor 208 to establish the desired range of negative bias applied to the gate drive. This negative bias on the gate of MOSFET 214 prevents over-conduction (and increased losses) at high line voltages. Resistor 200 provides current limiting for the negative supply formed by diode 206 . Resistor 212 reduces the rise time of the drive voltage to the gate of MOSFET 214, thereby minimizing radiated noise due to fast switching transients.
图3中绘出的波形示出开关MOSFET 110漏极的信号S1,此电压是变压器116的绕组120的初级电压。图4上方的描记线示出在次级绕组124中感应得到的信号电压S2,此电压也是同步整流器MOSFET 214漏极的电压。图4下方的描记线示出对MOSFET 214的栅极驱动。MOSFET 214的导通阈值为大约2.5V至3.0V,如图4中R1和R2所示。将栅极驱动信号通过导通阈值时的点投影到图4上方区域中漏极电压波形上表明在信号S2负偏移的时间间隔内MOSFET 214导通良好。从图4的栅极驱动波形还可以看出,通过检测器206增加施加到MOSFET 214栅极的负偏压(如同在较高线电压时发生的情况)将会减少栅极驱动电压高于导通阈值R1或R2的时间周期。The waveforms plotted in FIG. 3 show signal S 1 switching the drain of MOSFET 110 , which is the primary voltage of winding 120 of transformer 116 . The upper trace in FIG. 4 shows the signal voltage S 2 induced in the secondary winding 124 , which is also the voltage at the drain of the synchronous rectifier MOSFET 214 . The lower trace in FIG. 4 shows the gate drive to MOSFET 214 . The turn-on threshold of MOSFET 214 is approximately 2.5V to 3.0V, as shown by R 1 and R 2 in FIG. 4 . Projecting the point at which the gate drive signal crosses the turn-on threshold onto the drain voltage waveform in the upper region of FIG. 4 shows that MOSFET 214 conducts well during the time interval during which signal S2 is negatively shifted. It can also be seen from the gate drive waveforms of FIG. 4 that increasing the negative bias applied to the gate of MOSFET 214 through detector 206 (as would occur at higher line voltages) will reduce the gate drive voltage above the conduction voltage. pass threshold R1 or R2 time period.
虽然参照优选实施例描述了本发明,但是显然,在不脱离本发明的精神和范围内可以对各个实施例作出各种变型。While the invention has been described with reference to preferred embodiments, it will be apparent that various modifications can be made to the various embodiments without departing from the spirit and scope of the invention.
Claims (29)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200580051717 CN101273515A (en) | 2005-09-28 | 2005-09-28 | synchronous rectifier |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200580051717 Division CN101273515A (en) | 2005-09-28 | 2005-09-28 | synchronous rectifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102868303A CN102868303A (en) | 2013-01-09 |
| CN102868303B true CN102868303B (en) | 2015-09-16 |
Family
ID=40006434
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210293006.3A Expired - Lifetime CN102868303B (en) | 2005-09-28 | 2005-09-28 | Synchronous rectifier |
| CN 200580051717 Pending CN101273515A (en) | 2005-09-28 | 2005-09-28 | synchronous rectifier |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200580051717 Pending CN101273515A (en) | 2005-09-28 | 2005-09-28 | synchronous rectifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN102868303B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8830637B2 (en) * | 2010-08-31 | 2014-09-09 | Texas Instruments Incorporated | Methods and apparatus to clamp overvoltages for alternating current systems |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002095248A (en) * | 2000-09-14 | 2002-03-29 | Sharp Corp | Synchronous rectifier and switching power supply having the same |
| US6490176B2 (en) * | 2001-03-28 | 2002-12-03 | Provera Gmbh | DC/AC conversion apparatus and method having contactless, inductive energy transfer |
| US6831847B2 (en) * | 2000-11-20 | 2004-12-14 | Artesyn Technologies, Inc. | Synchronous rectifier drive circuit and power supply including same |
| CN1585247A (en) * | 2003-08-18 | 2005-02-23 | 株式会社村田制作所 | Switching electric source device |
-
2005
- 2005-09-28 CN CN201210293006.3A patent/CN102868303B/en not_active Expired - Lifetime
- 2005-09-28 CN CN 200580051717 patent/CN101273515A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002095248A (en) * | 2000-09-14 | 2002-03-29 | Sharp Corp | Synchronous rectifier and switching power supply having the same |
| US6831847B2 (en) * | 2000-11-20 | 2004-12-14 | Artesyn Technologies, Inc. | Synchronous rectifier drive circuit and power supply including same |
| US6490176B2 (en) * | 2001-03-28 | 2002-12-03 | Provera Gmbh | DC/AC conversion apparatus and method having contactless, inductive energy transfer |
| CN1585247A (en) * | 2003-08-18 | 2005-02-23 | 株式会社村田制作所 | Switching electric source device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101273515A (en) | 2008-09-24 |
| CN102868303A (en) | 2013-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI475786B (en) | System controller and method for power conversion system | |
| US6914789B2 (en) | Switching power supply apparatus with blanking pulse generator | |
| US6072701A (en) | Current resonance type switching power source | |
| TW201946351A (en) | Semiconductor device for power control, switching power device and design method thereof | |
| US5892665A (en) | Overcurrent protection circuit | |
| JP2006340538A (en) | Switching power supply | |
| US6642630B2 (en) | Multi-output switching power source circuit | |
| US10903751B2 (en) | Method and system of driving an electrically controlled switch with a snubber capacitor | |
| US7872879B2 (en) | Switched mode power converter and method of operation thereof | |
| US9780690B2 (en) | Resonant decoupled auxiliary supply for a switched-mode power supply controller | |
| TWI467900B (en) | Buck regulator | |
| US6490178B1 (en) | Switching power circuit which switches voltage supplied to a primary winding of a transformer with a switching element to rectify alternating current generated in a secondary winding of the transformer | |
| TWI767535B (en) | Method and apparatus for generating control signal and charging dc supply in a secondary synchronous rectifier | |
| CN102868303B (en) | Synchronous rectifier | |
| US20120287689A1 (en) | Synchronous rectifier disabling arrangement | |
| JP5103399B2 (en) | Synchronous rectifier | |
| JP4201161B2 (en) | Switching power supply | |
| JP2004519190A (en) | Switching power supply | |
| US20250105746A1 (en) | Switching power supply device and power control semiconductor device | |
| JPH06303769A (en) | Step-down chopper type switching power supply | |
| JP3419343B2 (en) | DC-DC converter | |
| TW463451B (en) | Power chip set for switching mode power supply (SMPS) | |
| JP5130936B2 (en) | DC-DC converter | |
| TW202101885A (en) | Power control device specifically relating to a power control device for dynamically adjusting the driving capability, and setting a driving voltage to control the conduction loss and the switch loss to achieve balance | |
| JP2002335675A (en) | Synchronous rectification circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: I Si Eli Murli Nor, France Patentee after: THOMSON LICENSING Address before: France's Nigeria - Billancourt City Patentee before: THOMSON LICENSING |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190128 Address after: Paris France Patentee after: International Digital Madison Patent Holding Co. Address before: I Si Eli Murli Nor, France Patentee before: THOMSON LICENSING Effective date of registration: 20190128 Address after: I Si Eli Murli Nor, France Patentee after: THOMSON LICENSING Address before: I Si Eli Murli Nor, France Patentee before: THOMSON LICENSING |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20150916 |