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CN102864439A - 一种制备具有抗pid效应的减反射膜的方法 - Google Patents

一种制备具有抗pid效应的减反射膜的方法 Download PDF

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CN102864439A
CN102864439A CN2012103212370A CN201210321237A CN102864439A CN 102864439 A CN102864439 A CN 102864439A CN 2012103212370 A CN2012103212370 A CN 2012103212370A CN 201210321237 A CN201210321237 A CN 201210321237A CN 102864439 A CN102864439 A CN 102864439A
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CN102864439B (zh
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黄仑
卢春辉
吴俊清
侯泽荣
王金伟
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YIXING MAGI SOLAR TECHNOLOGY Co Ltd DONGFANG ELECTRIC Corp
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Priority to JP2015528844A priority patent/JP6025985B2/ja
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Abstract

本发明公开一种制备具有抗PID效应的减反射膜的方法，包括：对炉管抽真空，保持炉内温度420℃，压力80mTorr，时间为4分钟；对硅片进行预处理，温度420℃，一氧化二氮流量为3.8~5.2slm，压力为1700mTorr，预处理3分钟；压力测试，保证设备内部压力50mTorr恒定，保持0.2~0.5分钟；预沉积，温度为420℃，氨气流量为0.1 ~0.9slm，硅烷流量为180 ~200sccm，一氧化二氮流量为3.5~5.1slm，压力为1000mTorr，射频功率4300瓦，持续时间0.3~0.5分钟；沉积，温度为450℃，氨气流量为2000~2200sccm，硅烷流量为7000~8500sccm，一氧化二氮流量为2~3.4slm，压力为1700mTorr，射频功率4300瓦，持续时间3~5分钟；氮气吹扫冷却，温度为420℃，氮气流量为6~12slm，压力为10000mTorr，吹扫时间5~8分钟。本发明制备的减反射膜具有抗PID效应，因此，光伏组件的抗衰减能力大幅提高。

Description

一种制备具有抗PID效应的减反射膜的方法
技术领域
本发明涉及太阳能电池的生产加工技术领域，更具体地说，是一种制备具有抗PID效应的减反射膜的方法。
背景技术
太阳能电池片是一种能量转换的光电元件，它可以在太阳光的照射下，把光能转换为电能，实现光伏发电。在太阳能硅片的表层沉积一层减反射膜，以降低硅片表面对光的发射，从而有效改善电池的光电转化效率，同时，减反射膜还能对太阳能电池起到表面钝化和体钝化的作用，因此，在选择减反射膜材料时应综合考虑这两方面的问题，适于作晶体硅太阳电池光学减反射膜的材料有氮化硅、氮氧化硅等薄膜材料。
目前，主要采用PEVCD生长减反射膜。PEVCD技术原理是利用低温等离子体作为能量源，利用高频电源及低压条件产生辉光放电，并使样品升温到预定的温度，然后通入适量的反应气体，气体经过辉光发电作用后受激发产生等离子，依靠电场作用在样品表面形成固态薄膜。目前的太阳能电池生产中，一般以氨气和硅烷作为反应气体，反应之后形成深蓝色的薄膜，其中的氮化硅起减反射作用，而氢可以起到体钝化的作用。PEVCD法镀膜对温度、真空度均有较高要求，由于是几种不同气体参加等离子反应，反应生成物复杂，并且由于反应气体常为有毒、易燃易爆气体，存在安全隐患。
电站实际运行中产生PID效应，PID效应是一种高强度负电压诱发的组件性能降低现象，严重时甚至可引起组件功率衰减50%以上，从而导致整个电站的功率输出下降，继而严重损害投资者的利益。
发明内容
本发明为了克服现有技术存在的问题，提供一种制备具有抗PID效应的减反射膜的方法。
本发明的目的可以通过以下技术方案实现：
一种制备具有抗PID效应的减反射膜的方法，其特征在于包括下面的步骤：
(1)对炉管抽真空，保持炉内温度420℃，压力80mTorr，时间为4分钟；
(2)对硅片进行预处理，温度420℃，一氧化二氮流量为3.8~5.2slm，压力为1700mTorr，预处理3分钟；
(3)压力测试，保证设备内部压力50mTorr恒定，保持0.2~0.5分钟；
(4)预沉积，温度为420℃，氨气流量为0.1~0.9slm，硅烷流量为180~200sccm，一氧化二氮流量为3.5~5.1slm，压力为1000mTorr，射频功率4300瓦，持续时间0.3~0.5分钟；
(5)沉积，温度为450℃，氨气流量为2000~2200sccm，硅烷流量为7000~8500sccm，一氧化二氮流量为2~3.4slm，压力为1700mTorr，射频功率4300瓦，持续时间3~5分钟；
(6)氮气吹扫冷却，温度为420℃，氮气流量为6~12slm，压力为10000mTorr，吹扫时间5~8分钟。
步骤(2)中一氧化二氮流量为4.4slm。
步骤(4)中氨气为0.5slm，硅烷为200sccm，一氧化二氮4.1slm。
步骤(5)中氨气流量为2100sccm，硅烷流量为7500sccm，一氧化二氮流量为2.4slm。
步骤(6)中氮气流量10slm,吹扫时间5分钟。
本发明的有益效果：本发明采用氨气、硅烷和一氧化二氮三种气体为反应气体，沉积在硅片上形成氮氧化硅减反射膜层，氮氧化硅膜层对硅片具有良好的钝化的性能及较高的折射率，有效阻碍硅基体与组件封装材料的电荷移动，该减反射膜具有抗PID效应。
具体实施方式
下面结合具体实施例对本发明作进一步详细的说明。
实施例1
本发明提供一种制备具有抗PID效应的减反射膜的方法，其特征在于包括下面的步骤：
(1)对炉管抽真空，保持炉内温度420℃，压力80mTorr，时间为4分钟；
(2)对硅片进行预处理，温度420℃，一氧化二氮流量为4.4 slm，压力为1700 mTorr，预处理3分钟；
(3)压力测试，保证设备内部压力50mTorr恒定，保持0.2~0.5分钟；
(4)预沉积，温度为420℃，氨气流量为0.5slm，硅烷流量为200sccm，一氧化二氮流量为4.1slm，压力为1000mTorr，射频功率4300瓦，持续时间0.3~0.5分钟；
(5)沉积，温度为450℃，氨气流量为2000sccm，硅烷流量为7500sccm，一氧化二氮流量为2slm，压力为1700mTorr，射频功率4300瓦，持续时间3~5分钟；
(6)氮气吹扫冷却，温度为420℃，氮气流量为10slm，压力为10000mTorr，吹扫时间5~8分钟。
实施例2
本发明提供一种制备具有抗PID效应的减反射膜的方法，其特征在于包括下面的步骤：
(1)对炉管抽真空，保持炉内温度420℃，压力80mTorr，时间为4分钟；
(2)对硅片进行预处理，温度420℃，一氧化二氮流量为3.8 slm，压力为1700 mTorr，预处理3分钟；
(3)压力测试，保证设备内部压力50mTorr恒定，保持0.2~0.5分钟；
(4)预沉积，温度为420℃，氨气流量为0.1slm，硅烷流量为180 sccm，一氧化二氮流量为3.5slm，压力为1000mTorr，射频功率4300瓦，持续时间0.3~0.5分钟；
(5)沉积，温度为450℃，氨气流量为2200sccm，硅烷流量为7200sccm，一氧化二氮流量为2.4slm，压力为1700mTorr，射频功率4300瓦，持续时间3~5分钟；
(6)氮气吹扫冷却，温度为420℃，氮气流量为8slm，压力为10000mTorr，吹扫时间5~8分钟。
实施例3
本发明提供一种制备具有抗PID效应的减反射膜的方法，其特征在于包括下面的步骤：
(1)对炉管抽真空，保持炉内温度420℃，压力80mTorr，时间为4分钟；
(2)对硅片进行预处理，温度420℃，一氧化二氮流量为4.8slm，压力为1700 mTorr，预处理3分钟；
(3)压力测试，保证设备内部压力50mTorr恒定，保持0.2~0.5分钟；
(4)预沉积，温度为420℃，氨气流量为0.7slm，硅烷流量为200 sccm，一氧化二氮流量为4.2slm，压力为1000mTorr，射频功率4300瓦，持续时间0.3~0.5分钟；
(5)沉积，温度为450℃，氨气流量为2100sccm，硅烷流量为8000sccm，一氧化二氮流量为2.9slm，压力为1700mTorr，射频功率4300瓦，持续时间3~5分钟；
(6)氮气吹扫冷却，温度为420℃，氮气流量为6slm，压力为10000mTorr，吹扫时间5~8分钟。
实施例4
本发明提供一种制备具有抗PID效应的减反射膜的方法，其特征在于包括下面的步骤：
(1)对炉管抽真空，保持炉内温度420℃，压力80mTorr，时间为4分钟；
(2)对硅片进行预处理，温度420℃，一氧化二氮流量为5.2 slm，压力为1700 mTorr，预处理3分钟；
(3)压力测试，保证设备内部压力50mTorr恒定，保持0.2~0.5分钟；
(4)预沉积，温度为420℃，氨气流量为0.9slm，硅烷流量为190 sccm，一氧化二氮流量为5.1slm，压力为1000mTorr，射频功率4300瓦，持续时间0.4分钟；
(5)沉积，温度为450℃，氨气流量为2080sccm，硅烷流量为8500sccm，一氧化二氮流量为3.4slm，压力为1700mTorr，射频功率4300瓦，持续时间3~5分钟；
(6)氮气吹扫冷却，温度为420℃，氮气流量为12slm，压力为10000mTorr，吹扫时间5~8分钟。

Claims (5)

1.一种制备具有抗PID效应的减反射膜的方法，其特征在于包括下面的步骤：
(1)对炉管抽真空，保持炉内温度420℃，压力80mTorr，时间为4分钟；
(2)对硅片进行预处理，温度420℃，一氧化二氮流量为3.8~5.2slm，压力为1700mTorr，预处理3分钟；
(3)压力测试，保证设备内部压力50mTorr恒定，保持0.2~0.5分钟；
(4)预沉积，温度为420℃，氨气流量为0.1 ~0.9slm，硅烷流量为180~200sccm，一氧化二氮流量为3.5~5.1slm，压力为1000mTorr，射频功率4300瓦，持续时间0.3~0.5分钟；
(5)沉积，温度为450℃，氨气流量为2000~2200sccm，硅烷流量为7000~8500sccm，一氧化二氮流量为2~3.4slm，压力为1700mTorr，射频功率4300瓦，持续时间3~5分钟；
(6)氮气吹扫冷却，温度为420℃，氮气流量为6~12slm，压力为10000mTorr，吹扫时间5~8分钟。
2.根据权利要求1所述的制备具有抗PID效应的减反射膜的方法，其特征在于：步骤(2)中一氧化二氮流量为4.4slm。
3.根据权利要求1所述的制备具有抗PID效应的减反射膜的方法，其特征在于：步骤(4)中氨气为0.5slm，硅烷为200sccm，一氧化二氮4.1slm。
4.根据权利要求1所述的制备具有抗PID效应的减反射膜的方法，其特征在于：步骤(5)中氨气流量为2100sccm，硅烷流量为7500sccm，一氧化二氮流量为2.4slm。
5.根据权利要求1所述的制备具有抗PID效应的减反射膜的方法，其特征在于：步骤(6)中氮气流量10slm,吹扫时间5分钟。
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