CN102857078A - Convertor unit based on welding type insulated gate bipolar transistor (IGBT) and pressure welding type diode antiparallel structure - Google Patents
Convertor unit based on welding type insulated gate bipolar transistor (IGBT) and pressure welding type diode antiparallel structure Download PDFInfo
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Abstract
本发明提供一种基于焊接型IGBT与压接型二极管反并联结构的换流单元，包括IGBT模块和电容，所述IGBT模块包括反并联的焊接型IGBT和压接型二极管，所述IGBT模块与所述电容并联。本发明提供的一种基于焊接型IGBT与压接型二极管反并联结构的换流单元，包括焊接型IGBT和压接型二极管，在包含多个串联的换流单元的换流器中，故障的换流单元可以转化为短路失效模式，保证整个IGBT阀的安全工作。
The present invention provides a commutation unit based on an anti-parallel structure of a welded IGBT and a press-connected diode, including an IGBT module and a capacitor. The IGBT module includes an anti-parallel welded IGBT and a press-connected diode. The IGBT module and The capacitors are connected in parallel. The present invention provides a converter unit based on the anti-parallel structure of welded IGBT and press-connected diode, including welded IGBT and press-connected diode. The commutation unit can be transformed into a short-circuit failure mode to ensure the safe operation of the entire IGBT valve.
Description
技术领域 technical field
本发明涉及电力电子半导体器件应用领域，具体讲涉及一种基于焊接型IGBT与压接型二极管反并联结构的换流单元。The invention relates to the application field of power electronic semiconductor devices, in particular to a commutation unit based on the antiparallel structure of a welded IGBT and a crimped diode.
背景技术 Background technique
绝缘栅双极型晶体管(IGBT，Insulated Gate Bipolar Transistor)是20世纪80年代中期出现的一种半导体电力开关器件，它的输入控制部分为金属氧化物半导体场效应晶体管(MOSFET，Metal-Oxide-Semiconductor Field EffectTransistor)，输出级为双极结型晶体管，兼有MOSFET和电力晶体管的优点：高输入阻抗，电压控制，驱动功率小，开关速度快，工作频率可达10～40kHz，饱和压降低，电压电流容量较大，安全工作区宽，但单个IGBT的电压、电流允许值很难再提高，为了应用于高电压、大功率的领域，可以采用模块化多电平和H桥级联多电平的方法。Insulated Gate Bipolar Transistor (IGBT, Insulated Gate Bipolar Transistor) is a semiconductor power switching device that appeared in the mid-1980s, and its input control part is a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET, Metal-Oxide-Semiconductor Field Effect Transistor), the output stage is a bipolar junction transistor, which has the advantages of both MOSFET and power transistor: high input impedance, voltage control, small driving power, fast switching speed, operating frequency can reach 10-40kHz, saturation voltage drop, voltage The current capacity is large and the safe working area is wide, but the voltage and current allowable value of a single IGBT are difficult to increase. In order to apply to high voltage and high power fields, modular multi-level and H-bridge cascaded multi-level can be used. method.
模块化多电平技术和H桥级联多电平技术均为一种多电平换流器技术，每相桥臂采用多个电气、结构和功能相同的子单元串联而成，并且将直流侧支撑电容分散集成到单个子单元中，每个子单元包含一个直流电源(一般为直流储能电容)，单个子单元主功率开关管的不同开关组合具备类似于单刀双掷开关的功能，不同开关组合与直流电源相互配合，从而形成了具有两种电平输出的“可控电压源”，H桥级联技术区别模块化多电平技术在于H桥级联技术没有直流母线。Modular multi-level technology and H-bridge cascaded multi-level technology are both multi-level converter technologies. Each phase bridge arm is connected in series with multiple subunits with the same electrical, structure and function, and the DC The side support capacitors are scattered and integrated into a single subunit, and each subunit contains a DC power supply (generally a DC energy storage capacitor). Different switch combinations of the main power switch tube of a single subunit have functions similar to single-pole double-throw switches. Different switches The combination and the DC power supply cooperate with each other to form a "controllable voltage source" with two-level output. The difference between the H-bridge cascading technology and the modular multi-level technology is that the H-bridge cascading technology does not have a DC bus.
传统模块化多电平技术和H桥级联多电平技术的子换流单元受到IGBT器件额定电压的限制，难以进一步提高电压，需要通过引入IGBT串联以提高子模块的电压与容量，同时各个换流单元间会产生电压不平衡的情况，而高电压、大功率的应用领域决定了一旦出现严重的电压不平衡，IGBT将不可避免的出现失效甚至爆炸，而IGBT出现断路实现或者发生爆炸后，又会损坏这些大功率电力电子装置，造成严重的损失。The sub-converter units of traditional modular multi-level technology and H-bridge cascaded multi-level technology are limited by the rated voltage of IGBT devices, and it is difficult to further increase the voltage. It is necessary to introduce IGBTs in series to increase the voltage and capacity of sub-modules. At the same time, each There will be a voltage imbalance between the converter units, and the high-voltage and high-power application fields determine that once a serious voltage imbalance occurs, the IGBT will inevitably fail or even explode. , will damage these high-power power electronic devices and cause serious losses.
目前半导体器件的封装形式主要有焊接型和平板压接型两种，焊接型具有体积小，安装方便，结构简单等优点，但器件只能单面散热，要求地板既要绝缘又要导热性能好，其失效形式为断路形式，平板压接型结构是将器件和双面散热器紧固在一起，散热器既作散热又作电极之用，散热性能好，器件工作安全可靠，失效模式为短路形式。At present, the packaging forms of semiconductor devices mainly include soldering type and flat crimping type. The soldering type has the advantages of small size, convenient installation, and simple structure, but the device can only dissipate heat from one side, requiring the floor to be both insulated and thermally conductive. , the failure form is the form of open circuit, the flat crimping structure is to fasten the device and the double-sided heat sink together, the heat sink is used for both heat dissipation and electrodes, the heat dissipation performance is good, the device is safe and reliable, and the failure mode is short circuit form.
发明内容 Contents of the invention
针对现有技术存在的上述缺陷，本发明的目的是提供一种基于焊接型IGBT与压接型二极管反并联结构的换流单元，焊接型IGBT出现断路故障时，故障的IGBT为短路失效形式，不影响整个IGBT串联结构的工作，此外，反并联二极管耐压值应当稍低于IGBT耐压值，当焊接型IGBT出现电压超出正常工作电压的异常工况时，压接型二极管会过压击穿，形成短路失效，保护该IGBT不至于损坏，采用本结构可以省去传统换流单元必需的保护用晶闸管。本发明提供的一种换流单元包括：IGBT模块和电容，所述IGBT模块包括反并联的焊接型IGBT和压接型二极管，所述IGBT模块与所述电容并联。In view of the above-mentioned defects existing in the prior art, the object of the present invention is to provide a commutation unit based on the anti-parallel structure of a welded IGBT and a press-connected diode. It does not affect the work of the entire IGBT series structure. In addition, the withstand voltage value of the anti-parallel diode should be slightly lower than the IGBT withstand voltage value. When the welding type IGBT has an abnormal working condition where the voltage exceeds the normal operating voltage, the crimping type diode will be overvoltage. wear, forming short-circuit failure, and protecting the IGBT from damage. This structure can save the protective thyristor necessary for the traditional converter unit. A converter unit provided by the present invention includes: an IGBT module and a capacitor, the IGBT module includes an anti-parallel welded IGBT and a pressure-connected diode, and the IGBT module is connected in parallel with the capacitor.
本发明提供的第一优选技术方案中：所述IGBT模块包括半桥结构，所述半桥结构包括一个桥臂，桥臂包括上下两个反并联的焊接型IGBT和压接型二极管。In the first preferred technical solution provided by the present invention: the IGBT module includes a half-bridge structure, the half-bridge structure includes a bridge arm, and the bridge arm includes two upper and lower anti-parallel soldered IGBTs and crimped diodes.
本发明提供的第二优选技术方案中：所述IGBT模块包括H桥结构，所述H桥结构包括对称的两个桥臂，每个桥臂包括上下两个反并联的焊接型IGBT和压接型二极管。In the second preferred technical solution provided by the present invention: the IGBT module includes an H-bridge structure, the H-bridge structure includes two symmetrical bridge arms, and each bridge arm includes two upper and lower anti-parallel soldered IGBTs and crimping type diode.
本发明提供的第三优选技术方案中：所述压接型二极管通过平板压接的封装形式封装进散热器里，所述焊接型IGBT的集电极与发射极固定在所述散热器两端。In the third preferred technical solution provided by the present invention: the crimp-type diode is packaged into the heat sink by flat crimping, and the collector and emitter of the welded IGBT are fixed at both ends of the heat sink.
本发明提供的第四优选技术方案中：所述压接型二极管通过20KN-80KN强力压接与散热器压合。In the fourth preferred technical solution provided by the present invention: the crimping type diode is crimped with the heat sink by 20KN-80KN strong crimping.
本发明提供的第五优选技术方案中：所述压接型二极管为压接型碳化硅二极管。In the fifth preferred technical solution provided by the present invention: the crimp-type diode is a crimp-type silicon carbide diode.
本发明提供的第六优选技术方案中：所述压接型二极管的耐压值低于IGBT耐压值。In the sixth preferred technical solution provided by the present invention: the withstand voltage value of the crimp-type diode is lower than the withstand voltage value of the IGBT.
本发明提供的第七优选技术方案中：提供一种模块化多电平结构电压源换流器，一端连接高压直流输电的直流网络侧(1)，另一端连接三相交流网络侧(2)，所述模块化多电平结构电压源换流器包括三相支路，每相支路包括串联的半桥结构IGBT模块的换流单元。In the seventh preferred technical solution provided by the present invention: a modular multilevel structure voltage source converter is provided, one end is connected to the DC network side (1) of HVDC power transmission, and the other end is connected to the three-phase AC network side (2) , the modular multi-level structure voltage source converter includes three-phase branches, each phase branch includes a converter unit of a half-bridge structure IGBT module connected in series.
本发明提供的第八优选技术方案中：提供一种H桥级联多电平结构电压源换流器，一端连接三相中性点，另一端连接三相交流网络侧，所述模块化多电平结构电压源换流器包括三相支路，每相支路包括串联的H桥结构IGBT模块与电容并联的换流单元。In the eighth preferred technical solution provided by the present invention: an H-bridge cascaded multi-level structure voltage source converter is provided, one end is connected to the three-phase neutral point, and the other end is connected to the three-phase AC network side, the modular multi-level The voltage source converter with level structure includes three-phase branches, and each phase branch includes series-connected H-bridge structure IGBT modules and a converter unit connected in parallel with capacitors.
附图说明 Description of drawings
图1是：本发明实施例提供的一种模块化多电平换流单元结构框图；Fig. 1 is a structural block diagram of a modular multilevel commutation unit provided by an embodiment of the present invention;
图2是：本发明实施例提供的一种H桥级联型多电平换流单元结构框图；Fig. 2 is a structural block diagram of an H-bridge cascaded multi-level converter unit provided by an embodiment of the present invention;
图3是：本发明实施例提供的一种模块化多电平电压源换流器结构框图；Fig. 3 is a structural block diagram of a modular multilevel voltage source converter provided by an embodiment of the present invention;
图4是：本发明实施例提供的一种H桥级联型电压源换流器结构框图。Fig. 4 is a structural block diagram of an H-bridge cascaded voltage source converter provided by an embodiment of the present invention.
图中：1、直流网络侧 2、三相交流网络侧 3、换流单元 4、开关器件 5、电容。In the figure: 1.
具体实施方式 Detailed ways
本发明提供的一种换流单元，包括并联的IGBT模块与电容，该IGBT模块包括焊接型IGBT和压接型二极管。为了达到较好的保护效果，压接型二极管的额定耐压可以稍低于焊接型IGBT额定耐压值。A converter unit provided by the present invention includes parallel-connected IGBT modules and capacitors, and the IGBT modules include soldered IGBTs and crimped diodes. In order to achieve a better protection effect, the rated withstand voltage of the crimping diode can be slightly lower than the rated withstand voltage of the soldered IGBT.
进一步的，该压接型二极管为压接型SiC(碳化硅)二极管。Further, the crimp-type diode is a crimp-type SiC (silicon carbide) diode.
实施例一：Embodiment one:
本发明提供的实施例一为一种模块化多电平换流单元，具体结构示意图如图1所示，由图1可以看出，本实施例提供的一种模块化多电平换流单元包括并联的IGBT模块与电容，本实施例提供的IGBT模块结构为半桥型，桥臂包括上下两个反并联的焊接型IGBT和压接型二极管。Embodiment 1 provided by the present invention is a modular multi-level converter unit. The specific structural diagram is shown in FIG. 1. It can be seen from FIG. Including the parallel connection of IGBT modules and capacitors, the structure of the IGBT module provided in this embodiment is a half-bridge type, and the bridge arm includes two upper and lower anti-parallel soldered IGBTs and pressure-connected diodes.
压接型二极管通过平板压接的散热器形式连接到IGBT，平板压接式结构主要是将器件和双面散热器紧固在一起，散热器既作散热又作电极之用，压接型二极管通过平板压接的方式反并联于其相应的焊接型IGBT的集电极C和发射极E之间。本实施例提供的一种模块化多电平换流单元由两组相互独立的IGBT、二极管和一个电容组成，换流单元中的一只IGBT损坏后，此换流单元的电容电压将不断升高，进而导致IGBT反并联的平板压接式二极管击穿，并进入短路失效模式，使得该换流单元短路。若换流单元中一只IGBT出现工作电压超出正常工作电压的异常工况时，由于反并联二极管耐压值稍低于IGBT耐压值，压接型二极管会过压击穿，形成短路失效，保护该IGBT不至于损坏，该换流单元短路。因此，采用本结构可以省去传统换流单元必需的保护用晶闸管。The crimping type diode is connected to the IGBT through a plate crimping heat sink. The plate crimping structure is mainly to fasten the device and the double-sided heat sink together. The heat sink is used for both heat dissipation and electrodes. The crimping type diode It is anti-parallel connected between the collector C and the emitter E of its corresponding soldered IGBT by way of plate crimping. A modular multi-level converter unit provided in this embodiment is composed of two sets of independent IGBTs, diodes and a capacitor. After one IGBT in the converter unit is damaged, the capacitor voltage of the converter unit will continue to rise High, which in turn causes the IGBT anti-parallel flat crimped diode to break down and enter the short-circuit failure mode, causing the converter unit to be short-circuited. If an IGBT in the converter unit has an abnormal working condition in which the working voltage exceeds the normal working voltage, since the withstand voltage of the anti-parallel diode is slightly lower than the withstand voltage of the IGBT, the crimping diode will break down due to overvoltage, resulting in short circuit failure. To protect the IGBT from being damaged, the converter unit is short-circuited. Therefore, adopting this structure can save the protective thyristor necessary for the traditional converter unit.
实施例二：Embodiment two:
本发明提供的实施例二为一种H桥级联型多电平换流单元，具体结构如图2所示，由图2可以看出，本实施例提供的一种H桥级联型多电平换流单元包括并联的IGBT模块和电容，本实施例提供的IGBT模块结构为H桥型，每个桥臂包括上下两个反并联的焊接型IGBT和压接型二极管。
压接型二极管通过平板压接的散热器形式连接到IGBT，平板压接式结构主要是将器件和双面散热器紧固在一起，散热器既作散热又作电极之用，压接型二极管通过平板压接的方式反并联于其相应的焊接型IGBT的集电极C和发射极E之间。本实施例提供的一种模块化多电平换流单元由四组相互独立的IGBT、二极管和一个电容组成，换流单元中的一只IGBT损坏后，该换流单元的电容电压将不断升高，进而导致IGBT反并联的平板压接式二极管击穿，并进入短路失效模式，使得该换流单元短路。若换流单元中一只IGBT出现工作电压超出正常工作电压的异常工况时，由于反并联二极管耐压值稍低于IGBT耐压值，压接型二极管会过压击穿，形成短路失效，保护该IGBT不至于损坏，该换流单元短路。因此，采用本结构可以省去传统换流单元必需的保护用晶闸管。The crimping type diode is connected to the IGBT through a plate crimping heat sink. The plate crimping structure is mainly to fasten the device and the double-sided heat sink together. The heat sink is used for both heat dissipation and electrodes. The crimping type diode It is anti-parallel connected between the collector C and the emitter E of its corresponding soldered IGBT by way of plate crimping. A modular multi-level converter unit provided in this embodiment is composed of four sets of independent IGBTs, diodes and a capacitor. After one IGBT in the converter unit is damaged, the capacitor voltage of the converter unit will continue to rise High, which in turn causes the IGBT anti-parallel flat crimped diode to break down and enter the short-circuit failure mode, causing the converter unit to be short-circuited. If an IGBT in the converter unit has an abnormal working condition in which the working voltage exceeds the normal working voltage, since the withstand voltage of the anti-parallel diode is slightly lower than the withstand voltage of the IGBT, the crimping diode will break down due to overvoltage, resulting in short circuit failure. To protect the IGBT from being damaged, the converter unit is short-circuited. Therefore, adopting this structure can save the protective thyristor necessary for the traditional converter unit.
实施例三：Embodiment three:
本发明提供的一种换流单元的实施例三为一种模块化多电平电压源换流器(Modular Multilevel Converter，MMC)，具体结构如图3所示，由图3可知，本实施例提供的一种MMC一端连接高压直流输电的直流网络侧1，另一端连接三相交流网络侧2，该MMC包括三相支路，每相支路均有多个子模块换流单元3串联而成，每个子模块换流单元3是相同的，均由开关器件4和电容5形成，通常开关器件4为IGBT，并且，IGBT并有反并联二极管作为续流用二极管，开关器件开通或关断，起到投入和切除电容电压的作用，通过控制多个子模块换流单元3的投入和切除数目与次序，在三相交流网络侧2得到一个指定的交流输出波形。
本实施例提供的换流单元3为本发明提供的实施例一中的一种模块化多电平换流单元，三相支路中有一个换流单元中的一只IGBT损坏后，该换流单元的电容电压将不断升高，进而导致IGBT反并联的平板压接式二极管击穿，并进入短路失效模式，使得该换流单元短路，不会造成整个换流器的损坏。若换流单元中一只IGBT出现工作电压超出正常工作电压的异常工况时，由于反并联二极管耐压值稍低于IGBT耐压值，压接型二极管会过压击穿，形成短路失效，保护该IGBT不至于损坏，该换流单元短路。因此，采用本结构可以省去传统换流单元必需的保护用晶闸管。The
实施例四：Embodiment four:
本发明提供的一种换流单元的实施例四为一种H桥级联型电压源换流器，具体结构如图4所示，由图4可知，本实施例提供的一种H桥级联型电压源换流器，一端连接三相中性点N，另一端连接三相交流网络A、B、C，H桥级联型电压源换流器包括三相支路，每相支路均有多个子模块换流单元串联而成，每个子模块换流单元是相同的，均由开关器件和电容形成，通常开关器件为IGBT，并且，IGBT并有反并联二极管作为续流用二极管，开关器件开通或关断，起到投入和切除电容电压的作用，通过控制多个子模块换流单元的投入和切除数目与次序，在三相交流网络侧得到一个指定的交流输出波形。Embodiment 4 of a converter unit provided by the present invention is an H-bridge cascaded voltage source converter. The specific structure is shown in FIG. One end of the cascaded voltage source converter is connected to the three-phase neutral point N, and the other end is connected to the three-phase AC network A, B, and C. The H-bridge cascaded voltage source converter includes three-phase branches, and each phase branch There are multiple sub-module commutation units connected in series. Each sub-module commutation unit is the same and is formed by switching devices and capacitors. Usually the switching devices are IGBTs, and the IGBTs also have anti-parallel diodes as freewheeling diodes. The device is turned on or off to play the role of switching on and off the capacitor voltage. By controlling the number and sequence of switching on and off the converter units of multiple sub-modules, a specified AC output waveform is obtained on the three-phase AC network side.
本实施例提供的换流单元为本发明提供的实施例二中的一种H桥级联型换流单元，三相支路中有一个换流单元中的一只IGBT损坏后，该换流单元的电容电压将不断升高，进而导致IGBT反并联的平板压接式二极管击穿，并进入短路失效模式，使得该换流单元短路，不会造成整个换流器的损坏。若换流单元中一只IGBT出现工作电压超出正常工作电压的异常工况时，由于反并联二极管耐压值稍低于IGBT耐压值，压接型二极管会过压击穿，形成短路失效，保护该IGBT不至于损坏，该换流单元短路。因此，采用本结构可以省去传统换流单元必需的保护用晶闸管。The converter unit provided in this embodiment is an H-bridge cascaded converter unit in
以上实施例仅用以说明本发明的技术方案而非对其限制，尽管参照上述实施例对本发明进行了详细的说明，所述领域的普通技术人员应当理解：依然可以对本发明的具体实施方式进行修改或者同等替换，而未脱离本发明精神和范围的任何修改或者等同替换，其均应涵盖在本发明的权利要求范围当中。The above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to the above embodiments, those of ordinary skill in the art should understand that: the specific implementation of the present invention can still be carried out. Any modification or equivalent replacement without departing from the spirit and scope of the present invention shall fall within the scope of the claims of the present invention.
Claims (9)
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| CN103633871A (en) * | 2013-11-20 | 2014-03-12 | 华南理工大学 | Full-bridge module and half-bridge module-based mixed multi-level converter and control method thereof |
| WO2018032655A1 (en) * | 2016-08-18 | 2018-02-22 | 国家电网公司 | Hybrid high-voltage direct-current breaker and power unit thereof |
| CN107743033A (en) * | 2017-09-20 | 2018-02-27 | 全球能源互联网研究院 | A kind of IGBT press mounting structures |
| CN109039100A (en) * | 2018-07-25 | 2018-12-18 | 许继集团有限公司 | A kind of semibridge system submodule of modularization multi-level converter |
| CN110495084A (en) * | 2017-01-27 | 2019-11-22 | 通用电器技术有限公司 | A protection device for MMC-HVDC sub-module |
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| CN103633871A (en) * | 2013-11-20 | 2014-03-12 | 华南理工大学 | Full-bridge module and half-bridge module-based mixed multi-level converter and control method thereof |
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