CN102832235A - Oxide semiconductor and method for manufacturing same - Google Patents

Abstract

The embodiment of the present invention discloses a class of oxide semiconductors that can suppress excess intrinsic carriers and have high electrical stability. The embodiments of the present invention include: Al _x In _{y Znz} oxides and trace dopants; the trace dopants include: rare earth elements, oxides of rare earth elements, 4B group elements, 4B group element oxides, 5B group Any one or a combination of two or more elements or oxides of Group 5B elements.

Description

Oxide semiconductor and manufacturing method thereof

technical field

The invention relates to the field of semiconductors, in particular to a class of oxide semiconductors and a manufacturing method thereof.

Background technique

Organic Light-Emitting Diode (OLED, Organic Light-Emitting Diode), a new type of display with broad application prospects, has begun to enter the market in small and medium-sized products in recent years, but large-sized TV products have not yet been industrialized, and large-sized OLEDs must be used. Source matrix organic light emitting diode panel (AMOLED, Active Matrix/Organic Light Emitting Diode), which includes two parts: thin film transistor (TFT, Thin Film Transistor) driving part and OLED light emitting part. Because OLEDs are current-driven, this requires that the active layer of the TFT that drives the OLED has a higher carrier mobility, and the electron mobility of the traditional amorphous silicon TFT used to drive the LCD (Liquid Crystal Display) Lower, more difficult to meet the needs of OLED. At present, AMOLED products are mainly driven by low-temperature polysilicon (LTPS, Low Temperature Poly-silicon) TFT, but it encounters difficulties in the large-area crystallization process, and the cost of the crystallization process is high, and it is impossible to break through the bottleneck of high cost of AMOLED. Therefore, it is urgent New active materials with the potential to replace silicon materials need to be investigated. Oxide semiconductors based on zinc oxide (ZnO) are considered to be one of the most suitable active materials for driving OLEDs due to their high mobility, good electrical uniformity, transparency to visible light, low fabrication temperature, and low cost.

Oxide semiconductors mainly include zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), and aluminum indium zinc oxide (AIZO). At present, the main problems faced by these oxide semiconductors are negative threshold voltage (normally on state), large subthreshold swing, and insufficient electrical stability. Among them, a negative threshold voltage means that a negative voltage needs to be added to turn it off, which will increase the power consumption of the entire TFT panel; a large sub-threshold swing means that there are more defects in the semiconductor, which will affect the reliability of the device. and switching characteristics.

Contents of the invention

In view of the above problems, an embodiment of the present invention provides a type of oxide semiconductor, which contains a small amount of dopant, and these trace dopant can suppress excess intrinsic carriers, and can pass the amount of doping To adjust the threshold voltage of the TFT device, and at the same time reduce the subthreshold swing of the device.

The oxide semiconductor provided by the present invention includes:

Al _x In _{y Znz} oxides and trace dopants;

The x, y and z represent the atomic ratios of aluminum (Al), indium (In) and zinc (Zn) in the Al _x In _y Zn _z oxide; where, 0.01≤x≤0.2, 0.3≤y≤0.7, 0.3 ≤z≤0.7, and x+y+z=1;

The trace dopant includes: rare earth elements, oxides of rare earth elements, group 4B elements, oxides of group 4B elements, group 5B elements or oxides of group 5B elements, any one or a combination of two or more.

Optionally, the rare earth elements are lanthanum (La), cesium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), One of terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), scandium (Sc) and yttrium (Y); The 4B group element is one of titanium (Ti), zirconium (Zr) and hafnium (Hf); the 5B group element is one of vanadium (V) and niobium (Nb).

Optionally, the amount of the trace dopant is in the range of 0.01wt.% to 5wt.%.

The method for manufacturing an oxide semiconductor provided by the present invention includes:

The four raw materials of trace dopant, aluminum oxide, indium oxide and zinc oxide are respectively manufactured into four targets, which are installed on four different target positions for simultaneous sputtering, and the sputtering power of different target positions is controlled to control the The ratio of the four raw materials to achieve the target atomic ratio of Al _x In _y Zn _z oxide, and the target ratio of Al _x In _y Zn _z oxide and trace dopant;

Or, the three raw materials of aluminum oxide, indium oxide and zinc oxide are manufactured into an oxide target according to the target atomic ratio, and the oxide target and the trace dopant target are installed on two different target positions at the same time Sputtering, controlling the target ratio of Al _x In _{y Znz} oxide and trace dopant by adjusting the sputtering power of different target positions;

Or, any two of the three raw materials of aluminum oxide, indium oxide and zinc oxide are manufactured into the first target according to the target atoms, and the remaining one of the raw materials is manufactured into the second target; the first target, the second The two targets and the trace dopant target are installed on three different target positions for simultaneous sputtering, and the target ratio of the Al _x In _y Zn _z oxide and the trace dopant is controlled by adjusting the sputtering power of different target positions .

Or, the four raw materials of trace dopant, aluminum oxide, indium oxide and zinc oxide are prepared according to the target atomic ratio of Al _x In _y Zn _z oxide and the target ratio of Al _x In _y Zn _z oxide and trace dopant Form a target and make a film by sputtering;

The x, y and z represent the atomic ratio of Al, _In and Zn in the AlxInyZn _z oxide; _the target atomic ratio is 0.01≤x≤0.2, 0.3≤y≤0.7, 0.3≤z≤0.7, And x+y+z=1;

The trace dopant includes: rare earth elements, oxides of rare earth elements, group 4B elements, oxides of group 4B elements, group 5B elements or oxides of group 5B elements, any one or a combination of two or more.

Optionally, the rare earth element is one of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc and Y; the The 4B group element is one of Ti, Zr and Hf; the 5B group element is one of V and Nb.

Optionally, the amount of the trace dopant is in the range of 0.01wt.% to 5wt.%.

The film thickness of the prepared oxide semiconductor is between 10nm and 100nm.

Preferably, the film thickness of the prepared oxide semiconductor is between 20nm and 50nm.

It can be seen from the above technical solutions that the embodiments of the present invention have the following advantages: the oxide semiconductor material provided by the present invention can , 4B group element oxides, 5B group elements or 5B group element oxides), can suppress excess intrinsic carriers and improve electrical stability.

Description of drawings

FIG. 1 is a schematic diagram of the structure of an oxide semiconductor used as a channel layer of a thin film transistor in an embodiment of the present invention.

Detailed ways

The embodiments of the present invention provide an oxide semiconductor that can suppress excess intrinsic carriers and has high electrical stability.

The oxide semiconductor in the embodiment of the present invention includes:

Al _x In _{y Znz} oxides and trace dopants;

The x, y and z represent the atomic ratios of aluminum (Al), indium (In) and zinc (Zn) in the Al _x In _y Zn _z oxide; where, 0.01≤x≤0.2, 0.3≤y≤0.7, 0.3 ≤z≤0.7, and x+y+z=1;

The trace dopant includes rare earth elements, oxides of rare earth elements, group 4B elements, oxides of group 4B elements, group 5B elements or oxides of group 5B elements, or any one or a combination of two or more.

In the embodiment of the present invention, the atomic ratio of In affects the carrier mobility of the oxide semiconductor, the higher the atomic ratio of In, the higher the carrier mobility of the oxide semiconductor; while Al and Zn The atomic ratio determines the carrier concentration and crystallization characteristics of the oxide semiconductor. In practical applications, the atomic ratios of Al, In and Zn are within the range disclosed in the embodiments of the present invention. The requirements for carrier mobility, carrier concentration and crystallization characteristics of the semiconductor are reasonably adjusted, which are not specifically limited here.

The oxide semiconductor material provided by the present invention introduces new dopants with low electronegativity (rare earth elements, oxides of rare earth elements, group 4B elements, oxides of group 4B elements, group 5B elements or oxides of group 5B elements ), which can suppress excess intrinsic carriers, regulate the threshold voltage of TFT devices, and reduce the subthreshold swing of TFT devices.

Optionally, the rare earth elements are lanthanum La (1.1), cesium Ce (1.1), praseodymium Pr (1.1), neodymium Nd (1.1), promethium Pm (0.9), samarium Sm (1.2), europium Eu (1.2) , gadolinium Gd (0.9), terbium Tb (1.2), dysprosium Dy (1.2), holmium Ho (1.2), erbium Er (1.3), thulium Tm (1.0), ytterbium Yb (1.3), lutetium Lu (1.3), scandium One of Sc (1.3) or Yttrium Y (1.2);

Optionally, the group 4B element is one of titanium Ti (1.5), zirconium Zr (1.4) and hafnium Hf (1.3);

Optionally, the 5B group element is one of vanadium V (1.6) and niobium Nb (1.6).

Among them, the numbers in parentheses after the above chemical elements represent the electronegativity of the element; the electronegativity represents the ability of the element to attract extra-valence electrons, and the lower the electronegativity, the stronger the ability to attract extra-valence electrons. The electronegativity of these elements is very different from that of oxygen (3.5), so that they can combine with oxygen to form oxides with strong ionic bonds. Therefore, when these materials are doped in the oxide semiconductor, the binding force between the oxide semiconductor and oxygen can be improved, and oxygen vacancies can be reduced, so that the generation of excess carriers can be suppressed, the threshold voltage can be adjusted, and the subthreshold swing can be reduced. .

Optionally, the amount of the trace dopant is in the range of 0.01wt.% to 5wt.%, that is, 0.01%≤[mass of the trace dopant ÷ (mass of the trace dopant+Al _x In _y Zn _z Oxide mass)] ≤ 5%.

The manufacturing method of the oxide semiconductor in the embodiment of the present invention may be a co-sputtering method or a direct sputtering method, specifically including:

Co-sputtering method:

The four raw materials of trace dopant, aluminum oxide, indium oxide and zinc oxide are respectively manufactured into four targets and installed on four different target positions for simultaneous sputtering, and the four targets are controlled by adjusting the sputtering power of different target positions. The ratio of raw materials to achieve the target atomic ratio of _{AlxInyZnz oxide} , and the target _ratio of _{AlxInyZnz oxide} and trace dopant _;

Or, the three raw materials of aluminum oxide, indium oxide and zinc oxide are manufactured into an oxide target according to the target atomic ratio, and the oxide target and the trace dopant target are installed on two different target positions at the same time Sputtering, controlling the target ratio of Al _x In _{y Znz} oxide and trace dopant by adjusting the sputtering power of different target positions;

Or, any two of the three raw materials of aluminum oxide, indium oxide and zinc oxide are manufactured into the first target according to the target atoms, and the remaining one of the raw materials is manufactured into the second target; the first target, the second The two targets and the trace dopant target are installed on three different target positions for simultaneous sputtering, and the target ratio of the Al _x In _y Zn _z oxide and the trace dopant is controlled by adjusting the sputtering power of different target positions ;

The x, y and z represent the atomic ratio of Al, _In and Zn in the AlxInyZn _z oxide; _the target atomic ratio is 0.01≤x≤0.2, 0.3≤y≤0.7, 0.3≤z≤0.7, And x+y+z=1;

The trace dopant includes rare earth elements, oxides of rare earth elements, group 4B elements, oxides of group 4B elements, group 5B elements or oxides of group 5B elements, or any one or a combination of two or more.

The film thickness of the prepared oxide semiconductor is between 10nm and 100nm.

Preferably, the film thickness of the prepared oxide semiconductor is between 20nm and 50nm.

Direct sputtering method:

The four raw materials of trace dopant, aluminum oxide, indium oxide and zinc oxide are made into targets according to the target atomic ratio of Al _x In _y Zn _z oxide and the target ratio of Al _x In _y Zn _z oxide and trace dopant material, the film is manufactured by sputtering;

The x, y and z represent the atomic ratio of Al, _In and Zn in the AlxInyZn _z oxide; _the target atomic ratio is 0.01≤x≤0.2, 0.3≤y≤0.7, 0.3≤z≤0.7, And x+y+z=1;

The trace dopant includes rare earth elements, oxides of rare earth elements, group 4B elements, oxides of group 4B elements, group 5B elements or oxides of group 5B elements, or any one or a combination of two or more.

Optionally, the rare earth element is any one of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc and Y; the The group B element is any one of Ti, Zr and Hf; the 5B group element is any one of V, Nb and Ta.

Optionally, the amount of the trace dopant is in the range of 0.01wt.% to 5wt.%, that is, 0.01%≤[mass of the trace dopant ÷ (mass of the trace dopant+Al _x In _y Zn _z Oxide mass)] ≤ 5%.

The film thickness of the prepared oxide semiconductor is between 10nm and 100nm.

Preferably, the film thickness of the prepared oxide semiconductor is between 20nm and 50nm.

For ease of understanding, the oxide semiconductor and its manufacturing method described in the above-mentioned embodiments are described in detail below in specific application scenarios, specifically:

Application example 1:

The Al _x In _y Zn _z oxide used is x=0.02, y=0.49, z==0.49; the trace dopant used is rare earth element: Ce, the amount of Ce is 0.01wt.%, 0.05wt.% respectively , 0.1wt.%.

Manufacturing method of oxide semiconductor:

The raw materials in the above proportions are made into a target material, and a thin film is manufactured by direct sputtering. The direct sputtering method is to mix various raw materials according to the target ratio in advance, and then uniformly use a target made of the mixed various raw materials to directly sputter to produce a thin film with a thickness of 30nm.

In this application example, the oxide semiconductor thin film manufactured above is used as a channel layer to manufacture a thin film transistor (the schematic diagram of which is shown in Figure 1). 1 shows the structure of the TFT according to the embodiment, including: a substrate 10, a gate 11, an insulating layer 12, a channel layer 13, a source 14a and a drain 14b; wherein the gate 11 is located on the substrate 10 Above, the insulating layer 12 is located on the gate 11 , the channel layer 13 is located on the insulating layer 12 , and the source 14 a and the drain 14 b are respectively located at both ends of the channel layer 13 . The distance between the left and right ends of the interval between the source electrode 14a and the drain electrode 14b is the channel length, and the length between the front and rear ends of the source electrode and the drain electrode is the channel width.

First, a layer of Al thin film with a thickness of 300 nm is fabricated on the glass substrate by sputtering, and patterned by photolithography to obtain the gate 11 . The insulating layer 12 is manufactured by anodic oxidation, and has a thickness of 200nm. The specific process of anodic oxidation is to put the substrate of the fabricated aluminum grid into the electrolyte solution as the anode, and put the graphite or conductive metal plate into the electrolyte solution as the cathode. First, a constant current is applied between the anode and the cathode. The most preferred value is 0.1mA/cm ² , the voltage between the anode and the cathode will increase linearly with time, and when the voltage reaches the set value (150V), the voltage will be constant until the current between the anode and the cathode is less than 0.01mA /cm ² , the substrate is taken out and dried with nitrogen gas and then cleaned. At this time, an oxide film is formed on the surface of the grid 11, and this oxide film is the insulating layer 12; the electrolyte solution is ammonium tartrate and ethylene glycol. Mixture. The channel layer 13 is manufactured by direct sputtering, the flow rates of oxygen and argon in sputtering are 50 SCCM and 4 SCCM respectively (SCCM is a volume flow unit, the English full name is: standard-state cubic centimeter per minute), and the thickness is 30nm. Manufacture a layer of indium tin oxide metal oxide (ITO, Indium Tin Oxides) thin film on the channel layer 13 by sputtering method, with a thickness of 500nm, adopt the lift-off method to pattern, and obtain the source electrode 14a at the same time and drain 14b.

Application example 2:

The Al _x In _y Zn _z oxide used has x=0.01, y=0.33, z=0.66; the trace dopant used is rare earth element: Ce, the amount of Ce is 0.01wt.%, 0.05wt.%, respectively. 0.1wt.%.

The raw materials of the above proportions were made into a target, and a thin film was fabricated by direct sputtering. The oxide semiconductor was manufactured in the same manner as in Application Example 1, and the thickness was 30nm.

In this application example, a thin film transistor is manufactured by using the thin film manufactured above as a channel layer, and the manufacturing method is the same as that of the application example 1, which will not be repeated here.

Application example 3:

The Al _x In _y Zn _z oxide used has x=0.01, y=0.66, z=0.33; the trace dopant used is rare earth element: Ce, the amount of Ce is 0.01wt.%, 0.05wt.%, respectively. 0.1wt.%.

The raw materials of the above proportions were made into a target, and a thin film was fabricated by direct sputtering. The oxide semiconductor was manufactured in the same manner as in Application Example 1, and the thickness was 30nm.

In this application example, a thin film transistor is manufactured by using the thin film manufactured above as a channel layer, and the manufacturing method is the same as that of the application example 1, which will not be repeated here.

Application example 4:

The Al _x In _y Zn _z oxide used has x=0.1, y=0.45, z=0.45; the trace dopant used is rare earth element: Ce, the amount of Ce is 0.01wt.%, 0.05wt.%, respectively. 0.1wt.%.

The raw materials of the above proportions were made into a target, and a thin film was fabricated by direct sputtering. The oxide semiconductor was manufactured in the same manner as in Application Example 1, and the thickness was 30nm.

In this application example, a thin film transistor is manufactured by using the thin film manufactured above as a channel layer, and the manufacturing method is the same as that of the application example 1, which will not be repeated here.

The relationship between the threshold voltage, sub-threshold swing and the doping amount of Ce in application examples 1 to 4 is shown in Table 1. From Table 1, it can be seen that the threshold voltage of the oxide semiconductor TFT increases with the doping amount of Ce increases, while the subthreshold swing decreases. It shows that the trace dopant Ce can regulate the threshold voltage and reduce the subthreshold swing.

Table I

Application example 5:

The Al _x In _y Zn _z oxide used has x=0.02, y=0.49, z=0.49; the trace dopant used is rare earth element: La, the amount of La is 0.1wt.%, 1wt.%, 5wt respectively .%.

Manufacturing method of oxide semiconductor:

The raw materials in the above proportions are made into a target material, and a thin film is manufactured by direct sputtering. The direct sputtering method is to mix various raw materials according to the target ratio in advance, and then uniformly use a target made of the mixed various raw materials to directly sputter to produce a thin film with a thickness of 30nm.

In this application example, a thin film transistor is manufactured by using the thin film manufactured above as a channel layer, and the manufacturing method is the same as that of the application example 1, which will not be repeated here.

The relationship between the threshold voltage, sub-threshold swing and La doping amount in Application Example 5 is shown in Table II.

Table II

Application example 6:

The Al _x In _y Zn _z oxide used has x=0.02, y=0.49, z=0.49; the trace dopant used is group 4B element: Ti, the amount of Ti is 0.1wt.%, 1wt.%, respectively. 5wt.%.

Manufacturing method of oxide semiconductor:

The raw materials in the above proportions are made into a target material, and a thin film is manufactured by direct sputtering. The direct sputtering method is to mix various raw materials according to the target ratio in advance, and then uniformly use a target made of the mixed various raw materials to directly sputter to produce a thin film with a thickness of 30nm.

In this application example, a thin film transistor is manufactured by using the thin film manufactured above as a channel layer, and the manufacturing method is the same as that of the application example 1, which will not be repeated here.

The relationship between the threshold voltage, sub-threshold swing and Ti doping amount in Application Example 6 is shown in Table 3.

Table three

Application example 7:

The Al _x In _y Zn _z oxide used has x=0.02, y=0.49, z=0.49; the trace dopant used is 5B group element: Nb, the amount of Nb is 0.5wt.%, 2wt.%, respectively 5wt.%.

Manufacturing method of oxide semiconductor:

The raw materials in the above proportions are made into a target material, and a thin film is manufactured by direct sputtering. The direct sputtering method is to mix various raw materials according to the target ratio in advance, and then uniformly use a target made of the mixed various raw materials to directly sputter to produce a thin film with a thickness of 30nm.

In this application example, a thin film transistor is manufactured by using the thin film manufactured above as a channel layer, and the manufacturing method is the same as that of the application example 1, which will not be repeated here.

The relationship between the threshold voltage, sub-threshold swing and Nb doping amount in Application Example 7 is shown in Table 4.

Table four

According to the corresponding table of threshold voltage, sub-threshold swing and trace dopants such as Ce, La, Ti and Nb corresponding to the above application examples, it can be known that trace dopants such as Ce, La, Ti and Nb have a significant effect on the threshold voltage The control and the reduction of the subthreshold swing have a similar effect, and in addition to elements such as Ce, La, Ti and Nb, rare earth elements, oxides of rare earth elements, 4B group elements, 4B group element oxides, 5B group elements or Elements or oxides with an electronegativity lower than 1.6 in the oxides of group 5B elements can be used as trace dopants in the embodiments of the present invention.

The application scenarios in the application examples of the present invention are described above only with some examples. It is understandable that there may be more application scenarios in practical applications, which are not specifically limited here.

The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Anyone skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present invention. Should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims (6)

1. an oxide semiconductor is characterized in that, comprising:

Al _xIn _yZn _zOxide and trace doped thing;

Said x, y and z represent Al _xIn _yZn _zAluminium in the oxide (Al), the atomic ratio of indium (In) and zinc (Zn); Wherein, 0.01≤x≤0.2,0.3≤y≤0.7,0.3≤z≤0.7, and x+y+z=1;

Said trace doped thing comprises: rare earth element, the oxide of rare earth element, 4B family element, 4B family element oxide, any one in 5B family element or the 5B family element oxide or two or more combinations.

2. according to the said oxide semiconductor of claim 1; It is characterized in that described rare earth element is a kind of in lanthanum (La), caesium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), scandium (Sc) and the yttrium (Y); Described 4B family element is a kind of in titanium (Ti), zirconium (Zr) and the hafnium (Hf); Described 5B family element is a kind of in vanadium (V) and the niobium (Nb).

3. according to claim 1 or 2 said oxide semiconductors, it is characterized in that the amount of said trace doped thing is in 0.01wt.% to 5wt.% scope.

4. the manufacturing approach of an oxide semiconductor is characterized in that, comprising:

With trace doped thing, aluminium oxide, four kinds of raw materials of indium oxide and zinc oxide manufacture four targets respectively, and are installed on four different target position sputter simultaneously, control the ratio of said four kinds of raw materials through the sputtering power of regulating different target position, to reach Al _xIn _yZn _zThe target atoms ratio of oxide, and Al _xIn _yZn _zThe target proportion of oxide and trace doped thing;

Or; With aluminium oxide; Three kinds of raw materials of indium oxide and zinc oxide manufacture oxide target material by said target atoms ratio, and said oxide target material and trace doped thing target are installed in sputter simultaneously on two different target position, control said Al through the sputtering power of regulating different target position _xIn _yZn _zThe target proportion of oxide and trace doped thing;

Or with aluminium oxide, any two kinds in three kinds of raw materials of indium oxide and zinc oxide manufacture first target by said target atoms, and remaining a kind of raw material manufactures second target; With first target, second target is installed in sputter simultaneously on three different target position with trace doped thing target, controls said Al through the sputtering power of regulating different target position _xIn _yZn _zThe target proportion of oxide and trace doped thing;

Or, with trace doped thing, aluminium oxide, four kinds of raw materials of indium oxide and zinc oxide are pressed Al _xIn _yZn _zThe target atoms of oxide is Al when _xIn _yZn _zThe target proportion of oxide and trace doped thing is processed target, makes film forming through the mode of sputter;

Said x, y and z represent Al _xIn _yZn _zAl in the oxide, the atomic ratio of In and Zn; Said target atoms ratio is 0.01≤x≤0.2,0.3≤y≤0.7,0.3≤z≤0.7, and x+y+z=1;

Said trace doped thing comprises: rare earth element, the oxide of rare earth element, 4B family element, 4B family element oxide, any one in 5B family element or the 5B family element oxide or two or more combinations.

5. according to the said oxide semiconductor of claim 4, it is characterized in that described rare earth element is a kind of among La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc and the Y; Described 4B family element is a kind of among Ti, Zr and the Hf; Described 5B family element is a kind of among V and the Nb.

6. according to claim 4 or 5 said oxide semiconductors, it is characterized in that the amount of said trace doped thing is in 0.01wt.% to 5wt.% scope.

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