CN102832138A - Method for forming packaging substrate with ultrathin seed layer - Google Patents
Method for forming packaging substrate with ultrathin seed layer Download PDFInfo
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- CN102832138A CN102832138A CN2011101602103A CN201110160210A CN102832138A CN 102832138 A CN102832138 A CN 102832138A CN 2011101602103 A CN2011101602103 A CN 2011101602103A CN 201110160210 A CN201110160210 A CN 201110160210A CN 102832138 A CN102832138 A CN 102832138A
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Abstract
本发明提供一种具超薄种子层的封装基板形成方法，其主要是将压合于基板的表面上的金属箔片蚀刻掉，而形成一基面，接着在基面上形成厚度超薄的超薄种子层，且此超薄种子层以导电材料构成，并可以随着基面的粗糙度起伏，该超薄种子层的粗糙表面有助于增加形成于其上的金属凸块或线路与基板的附着度及结合力，且由于超薄种子层的厚度很薄，因此可有效缩小基板上线路的线宽及线距，故可增加制作细线路的良率。
The present invention provides a method for forming a packaging substrate with an ultra-thin seed layer, which mainly involves etching away a metal foil pressed on the surface of a substrate to form a base surface, and then forming an ultra-thin seed layer with an ultra-thin thickness on the base surface. The ultra-thin seed layer is made of a conductive material and can fluctuate with the roughness of the base surface. The rough surface of the ultra-thin seed layer helps to increase the adhesion and bonding force between the metal bumps or circuits formed thereon and the substrate, and because the thickness of the ultra-thin seed layer is very thin, the line width and line spacing of the circuit on the substrate can be effectively reduced, thereby increasing the yield of making fine circuits.
Description
Technical field
The present invention relates to the base plate for packaging formation method of the ultra-thin Seed Layer of a kind of tool (seed layer); Relate in particular to and see through adherence and the adhesion that ultra-thin Seed Layer increases metal coupling or circuit and substrate; And because the very thin thickness of ultra-thin Seed Layer, therefore can effectively dwindle the live width and the line-spacing of circuit on the substrate.
Background technology
Conventional package substrates is made in the flow process; Normally directly Copper Foil is pressed on the surface of substrate as conductting layer; The thickness of Copper Foil generally is about 3 μ m～12 μ m, then on conductting layer, is forming circuit through pressing mold, little shadow, copper facing, again dry film is reached the conductting layer that is not covered by circuit afterwards and removes; Yet light, thin, short, little day by day, the high density of digital circuit board now, so the printing demand on fine rule road improves gradually.
Because the base plate line density on fine rule road is higher; Therefore line-spacing and the live width on the substrate will be dwindled relatively; But utilize general Copper Foil now as conductting layer; Because the thickness of general Copper Foil is about 3 μ m～12 μ m, cause restriction being arranged, therefore difficult density and the yield that improves the fine rule base board on the line-spacing dwindling.
Summary of the invention
Main purpose of the present invention is in the base plate for packaging formation method that the ultra-thin Seed Layer of a kind of tool (seed layer) is provided; Pressing tinsel on a surface of substrate then runs through this substrate and tinsel and forms a hole, then; Whole the etching away of tinsel formed a basal plane; And in the last ultra-thin ultra-thin Seed Layer of thickness that forms of the Kong Bi of this basal plane and hole, wherein basal plane can be rough surface, and this ultra-thin Seed Layer is an electric conducting material; This ultra-thin Seed Layer can rise and fall along with the roughness of basal plane, and so this ultra-thin Seed Layer is also for having the conductive layer of rough surface.
Then, dry film is pressed on this ultra-thin Seed Layer, forms opening by image transfer; Opening exposes the ultra-thin Seed Layer of part and opens at least one hole; And in the opening of dry film plated metal, filling up opening, and produce metal coupling; Wherein metal coupling increases the adherence and the adhesion of metal coupling or circuit and substrate through the rough surface of ultra-thin Seed Layer; And, can increase the yield of making the fine rule road because therefore the very thin thickness of ultra-thin Seed Layer can effectively dwindle the live width and the line-spacing of circuit on the substrate.
At last, divest dry film and with beyond the hole and the ultra-thin Seed Layer that is not covered by metal coupling remove.
Another main purpose of the present invention is in the base plate for packaging formation method that the ultra-thin Seed Layer of a kind of tool is provided; The utilization of this method is at the base-material of the upper and lower surfaces pressing tinsel of substrate; Then run through this substrate and tinsel and tinsel and form a hole, then, tinsel and tinsel are etched away; Form top base and reach basal plane down; Top base and down basal plane can be rough surface, then at top base and form the ultra-thin ultra-thin Seed Layer of thickness on the Kong Bi of basal plane and hole down, wherein this ultra-thin Seed Layer is an electric conducting material; This ultra-thin Seed Layer is along with substrate can be along with top base and the roughness fluctuating of basal plane down, and so this ultra-thin Seed Layer is also for having the conductive layer of rough surface.
Then, dry film is pressed on this ultra-thin Seed Layer, dry film is formed opening with the mode of image transfer; Opening exposes the ultra-thin Seed Layer of part and opens at least one hole, and then plated metal fills up opening and produces metal coupling; Wherein the metal coupling rough surface that sees through ultra-thin Seed Layer increase and substrate between adherence and adhesion; And, can increase the yield of making the fine rule road because therefore the very thin thickness of ultra-thin Seed Layer can effectively dwindle the live width and the line-spacing of circuit on the substrate.
At last, divest dry film and with beyond the hole and the ultra-thin Seed Layer that is not covered by metal coupling remove.
Further, with above-mentioned double-decker, extend to form the multi-layer sheet structure more than three layers in the same way again.
The base plate for packaging formation method of the ultra-thin Seed Layer of tool of the present invention (seed layer); Mainly be to utilize ultra-thin Seed Layer to replace the layer of metal foil in the general base plate for packaging; Because ultra-thin Seed Layer has ultra-thin thickness; Therefore can effectively dwindle the live width and the line-spacing of circuit on the substrate, further improve the yield of making the fine rule base board.In addition, ultra-thin Seed Layer is the conductive layer with rough surface, thus metal coupling or circuit can see through that ultra-thin Seed Layer increases and substrate between adherence and adhesion, be difficult for and substrate attachment in order to avoid some metal material, thereby the problem that comes off.
Description of drawings
Figure 1A-Fig. 1 H is the administration step sketch map of first embodiment of the invention;
Fig. 2 A-Fig. 2 G is the administration step sketch map of second embodiment of the invention; And
Fig. 3 A-Fig. 3 H is the administration step sketch map of third embodiment of the invention.
Embodiment
Those skilled in the art below cooperate Figure of description that execution mode of the present invention is done more detailed explanation, so that can implement after studying this specification carefully according to this.
With reference to figure 1A-Fig. 1 H, Figure 1A-Fig. 1 H is the administration step sketch map of first embodiment of the invention.
At first, shown in Figure 1A-Figure 1B, on the surface of pressing one tinsel 20 to one substrates 10; Then, run through substrate 10 and form at least one hole 30 (being) in Fig. 1 C, then as representative with a hole 30 with tinsel 20; Etching is to remove tinsel 20; In order to let the surface of substrate 10 become a basal plane 11, wherein etch away the roughness (making basal plane 11 form a rough rough surface) that tinsel 20 can increase the surface of substrate 10, shown in Fig. 1 D.
Then; Form a ultra-thin Seed Layer (seed layer) 25 on the Kong Bi of basal plane 11 and hole 30; Wherein this ultra-thin Seed Layer 27 is to be made up of electric conducting material; This ultra-thin Seed Layer 25 is along with this basal plane 11 rises and falls, and therefore this ultra-thin Seed Layer 25 is also for to have the Seed Layer of rough surface, shown in Fig. 1 E.Then, pressing one dry film 40 utilizes the image transfer mode on this ultra-thin Seed Layer 25, makes this dry film 40 have at least one opening, and opening can expose a part of and this hole 30 of ultra-thin Seed Layer 25.
Then, have plated metal on the dry film of opening accomplishing image transfer, make on the ultra-thin Seed Layer 25 that the dry film opening is exposed; And hole 30 filled up; In order to form at least one metal coupling 51,53, wherein institute's electroplated metal can be the alloy of copper or copper, shown in Fig. 1 F; When ultra-thin Seed Layer 25 has the rough surface that rises and falls along with basal plane 11, can increase the adherence and the adhesion of plating metal coupling 51,53 on it.At last, divest dry film 40 and also will do not removed, shown in Fig. 1 G-Fig. 1 H by the ultra-thin Seed Layer 25 of metal coupling 51,53 coverings.
The surface that is noted that substrate comprises the upper surface of this substrate and one of them of lower surface, is the expression of above surface in Figure 1B.
Be noted that this tinsel 20 can be copper foil, metal coupling 51,53 can be one of them that copper bump and this at least one hole 30 comprise buried via hole, blind hole and through hole.
Be noted that; The method that forms ultra-thin Seed Layer 25 comprises one of them of chemical deposition and electricity slurry sputter; And this ultra-thin Seed Layer has a thickness, and this thickness is less than 1 μ m, because the thickness of this ultra-thin Seed Layer as thin as a wafer; Therefore can effectively dwindle the live width and the line-spacing of circuit on the substrate, so can increase the yield of making the fine rule road.
With reference to figure 2A-Fig. 2 G, the administration step sketch map of second embodiment of the invention.
At first, shown in Fig. 2 A, prepare first tinsel 22 to the substrate 10 of pressing upper surface, and pressing second tinsel 24 be pressure bonded to a base-material of the lower surface of substrate 10.Then; Run through substrate 10, first tinsel 22 and second tinsel 24, to form at least one hole 35 (being) in Fig. 2 B, then as representative with a through hole; Etching is to remove first tinsel 22; In order to letting the upper surface of this substrate 10 become top base 13, and etching is to remove second tinsel 24, in order to let the lower surface of substrate 10 become basal plane 15 down; Wherein etch away first tinsel 22 and second tinsel 24 can increase substrate 10 upper and lower surfaces and roughness (being that top base 13 can be a rough surface with following basal plane 15), shown in Fig. 2 C.
Then; Form a ultra-thin Seed Layer 27 on the Kong Bi of the surface of top base 13 and following basal plane 15 and hole 35; Wherein this ultra-thin Seed Layer 27 is to be made up of electric conducting material; This ultra-thin Seed Layer 27 is along with the surface undulation of top base 13 with following basal plane 15, and therefore this ultra-thin Seed Layer 27 also can be for having the conductive layer of rough surface, shown in Fig. 2 D.Then; Pressing first dry film 42 is on the ultra-thin Seed Layer 27 that is positioned on this top base 13; And pressing one second this dry film 44 is on the ultra-thin Seed Layer 27 that is positioned on this unsmooth lower surface 15; This first dry film 42 and this second this dry film 44 have at least one opening respectively after the image transfer, expose ultra-thin Seed Layer 27 and hole 35 partly.
Then, shown in Fig. 2 E, accomplish image transfer and have plated metal on the dry film of opening; On the ultra-thin Seed Layer 27 that metal is formed on exposed; And opening 35 filled up, and form at least one metal coupling 55,57,59, wherein institute's electroplated metal can be the alloy of copper or copper; Wherein when ultra-thin Seed Layer 27 has rough surface, can increase plating metal coupling 55,57,59 and the adherence and the adhesion of substrate on it.At last, divest first dry film 42 and second dry film 44 and general and do not removed, and form the pair of lamina structure, shown in Fig. 2 F-Fig. 2 G by the ultra-thin Seed Layer 27 that metal coupling 55,57,59 covers.
Be noted that; First tinsel 22 and second tinsel 24 can be copper foil; Metal coupling 55,57,59 can be one of them that copper bump and this at least one hole 35 comprise buried via hole, blind hole and through hole; Wherein fill up hole 35, and form metal coupling 57,59, the circuit unit of upper surface and the circuit unit of lower surface are electrically connected at two ends.
Be noted that; The method that forms ultra-thin Seed Layer 27 comprises one of them of chemical deposition and electricity slurry sputter; And this ultra-thin Seed Layer has a thickness, and this thickness is less than 1 μ m, because the thickness of this ultra-thin Seed Layer as thin as a wafer; Therefore can effectively dwindle the live width and the line-spacing of circuit on the substrate, so can increase the yield of making the fine rule road.
With reference to figure 3A-Fig. 3 H, the administration step sketch map of third embodiment of the invention.Shown in Fig. 3 A-Fig. 3 H; The third embodiment of the present invention is used the double-decker of second embodiment; Be the multi-layer sheet structure and extend to form; Shown in Fig. 3 A-Fig. 3 B, forming one the 3rd substrate 60 respectively with the step of second embodiment formed double-decker top and/or bottom, and on the 3rd substrate each pressing one tinsel 70.Then, shown in Fig. 3 C, the mode of using second embodiment forms at least one hole, among Fig. 3 C with hole 37 as through hole signal and hole 39 as the signal of buried via hole.
Then; Tinsel 70 is divested with etching mode; Form one first basal plane 17 and/or second basal plane 19 on the surface of the 3rd substrate 60 and make; First basal plane 17 and second basal plane 19 can be rough surface, then forming a ultra-thin Seed Layer 29 on first basal plane 17, second basal plane 19 and on the hole wall of hole 37,39, shown in Fig. 3 D-Fig. 3 E.
Then; On top and the bottom form the 3rd dry film 46 and the 4th dry film 48 respectively, and utilize image transfer to form at least one opening, accomplish image transfer and have plated metal on the dry film of opening; On the ultra-thin Seed Layer 29 that metal is formed on exposed; And opening 37,39 filled up, and form at least one metal coupling 81,83,85, shown in Fig. 3 F.
Then, remove dry film, the ultra-thin Seed Layer 29 that will not have metal coupling 81,83,85 to coat again removes, and shown in Fig. 3 G-Fig. 3 H, and forms a multi-layer sheet structure.Wherein from filling up hole 37 and metal coupling 81,85 can be electrically connected the assembly of the superiors and undermost assembly at two ends, and fill up hole 39 and the metal coupling 83 that forms, internal layer and skin are electrically connected.
The above person is merely in order to explain preferred embodiment of the present invention; Be not that attempt is done any pro forma restriction to the present invention according to this; Therefore, all have in that identical invention spirit is following do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protect.
Claims (12)
1. the base plate for packaging formation method of the ultra-thin Seed Layer of tool is characterized in that, comprising:
One surface of pressing one tinsel to a substrate;
Run through this substrate and this tinsel and form at least one hole;
Etching is to remove this tinsel, in order to let the surface of this substrate become a basal plane;
Form a ultra-thin Seed Layer on the Kong Bi of this basal plane and this at least one hole, wherein this ultra-thin Seed Layer is to be made up of electric conducting material;
Pressing one dry film make this dry film have at least one opening with the image transfer, and this at least one opening exposes ultra-thin Seed Layer and this at least one hole partly on this ultra-thin Seed Layer;
Electroplate on the ultra-thin Seed Layer of a metal in this at least one opening, and should fill up by at least one hole, to form at least one metal coupling; And
Divest this dry film also with being removed by the ultra-thin Seed Layer of this at least one metal coupling covering beyond this at least one hole and not.
2. manufacture method as claimed in claim 1 is characterized in that, the method that forms this ultra-thin Seed Layer comprises one of them of chemical deposition and electricity slurry sputter.
3. manufacture method as claimed in claim 1 is characterized in that, this ultra-thin Seed Layer has a thickness, and this thickness is less than 1 μ m.
4. manufacture method as claimed in claim 1 is characterized in that, this at least one hole comprise buried via hole, blind hole and through hole at least one of them.
5. manufacture method as claimed in claim 1 is characterized in that, this basal plane is a rough surface, and this ultra-thin Seed Layer is along with the roughness fluctuating of this basal plane.
6. the base plate for packaging formation method of the ultra-thin Seed Layer of tool is characterized in that, comprising:
Prepare one and one first tinsel and one second tinsel have been pressure bonded to the upper surface of a substrate and a base-material of lower surface individually;
Run through this substrate, this first tinsel and this second tinsel, to form at least one hole;
Etching to be removing this first tinsel and this second tinsel, in order to let upper surface and the lower surface of this substrate distinctly become a top base and basal plane once;
Form a ultra-thin Seed Layer on the hole wall of this top base, this time basal plane and this at least one hole, wherein this ultra-thin Seed Layer is to be made up of electric conducting material;
Pressing one first dry film is on the ultra-thin Seed Layer that is positioned at this top base; And pressing one second this dry film is on the ultra-thin Seed Layer that is positioned at this time basal plane; After the image transfer, make this first dry film and this second this dry film have at least one opening individually, and this at least one opening expose ultra-thin Seed Layer and this at least one hole partly;
Electroplate a metal on the ultra-thin Seed Layer that is exposed, and fill up this at least one hole also, to form at least one metal coupling; And
Divest this first dry film and this second dry film and also this at least one hole will be removed by the ultra-thin Seed Layer of this at least one metal coupling covering in addition and not, and form the pair of lamina structure.
7. manufacture method as claimed in claim 6 is characterized in that, the method that forms this ultra-thin Seed Layer comprises one of them of chemical deposition and electricity slurry sputter.
8. manufacture method as claimed in claim 6 is characterized in that, this ultra-thin Seed Layer has a thickness, and this thickness is less than 1 μ m.
9. manufacture method as claimed in claim 6 is characterized in that this at least one hole comprises one of them of buried via hole, blind hole and through hole.
10. manufacture method as claimed in claim 1 is characterized in that, this top base and this time basal plane are a rough surface, and this ultra-thin Seed Layer is along with the roughness fluctuating of this top base and this time basal plane.
11. manufacture method as claimed in claim 6 is characterized in that, further comprises:
On this double-deck top and/or the bottom form one the 3rd substrate;
On the 3rd substrate, pressing one tinsel;
Run through this tinsel, the 3rd substrate and this double-decker, and form at least one hole;
Etching forms one first basal plane and/or one second basal plane to remove this tinsel in order to the surface at the 3rd substrate;
On the hole wall of this first basal plane and/or this second basal plane and this at least one hole, form a ultra-thin Seed Layer;
Pressing 1 the 3rd dry film is on the ultra-thin Seed Layer that is positioned at the 3rd basal plane; And/or pressing 1 the 4th dry film is on the ultra-thin Seed Layer that is positioned at this second basal plane; After the image transfer, make the 3rd dry film and the 4th this dry film have at least one opening individually, and this at least one opening expose ultra-thin Seed Layer and this at least one hole partly;
Electroplate a metal on the ultra-thin Seed Layer that is exposed, and fill up this at least one hole also, to form at least one metal coupling; And
Divest the 3rd dry film and the 4th dry film and also this at least one hole will be removed by the ultra-thin Seed Layer of this at least one metal coupling covering in addition and not, and form a multi-layer sheet structure.
12. manufacture method as claimed in claim 1 is characterized in that, this first basal plane and/or second basal plane are a rough surface, and this ultra-thin Seed Layer is along with the roughness fluctuating of this first basal plane and/or this second basal plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011101602103A CN102832138A (en) | 2011-06-15 | 2011-06-15 | Method for forming packaging substrate with ultrathin seed layer |
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| CN2011101602103A CN102832138A (en) | 2011-06-15 | 2011-06-15 | Method for forming packaging substrate with ultrathin seed layer |
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| CN102832138A true CN102832138A (en) | 2012-12-19 |
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| CN2011101602103A Pending CN102832138A (en) | 2011-06-15 | 2011-06-15 | Method for forming packaging substrate with ultrathin seed layer |
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| CN105870093A (en) * | 2016-05-25 | 2016-08-17 | 武汉光谷创元电子有限公司 | Conducting cylinder, manufacturing method thereof, chip packaging method and flip chip product |
| CN105899003A (en) * | 2015-11-06 | 2016-08-24 | 武汉光谷创元电子有限公司 | Single layer circuit board, multilayer circuit board and manufacture method for single layer circuit board and multilayer circuit board |
| CN107527825A (en) * | 2016-06-17 | 2017-12-29 | 株式会社吉帝伟士 | Manufacturing method of semiconductor package |
| CN110536566A (en) * | 2019-08-29 | 2019-12-03 | 江苏上达电子有限公司 | A kind of forming hole method of flexible double-sided plate |
| CN114725030A (en) * | 2021-01-06 | 2022-07-08 | 南茂科技股份有限公司 | Semiconductor package structure and manufacturing method thereof |
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| US10757821B2 (en) | 2015-11-06 | 2020-08-25 | Richview Electronics Co., Ltd. | Single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor |
| US11266027B2 (en) | 2015-11-06 | 2022-03-01 | Richview Electronics Co., Ltd. | Single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor |
| US11917768B2 (en) | 2015-11-06 | 2024-02-27 | Richview Electronics Co., Ltd. | Single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor |
| US10321581B2 (en) | 2015-11-06 | 2019-06-11 | Richview Electronics Co., Ltd. | Single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor |
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| CN110536566B (en) * | 2019-08-29 | 2021-04-02 | 江苏上达电子有限公司 | Hole forming method for flexible double-sided board |
| CN110536566A (en) * | 2019-08-29 | 2019-12-03 | 江苏上达电子有限公司 | A kind of forming hole method of flexible double-sided plate |
| CN114725030A (en) * | 2021-01-06 | 2022-07-08 | 南茂科技股份有限公司 | Semiconductor package structure and manufacturing method thereof |
| CN114725030B (en) * | 2021-01-06 | 2025-09-16 | 南茂科技股份有限公司 | Semiconductor packaging structure and manufacturing method thereof |
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Application publication date: 20121219 |