CN102812066B - Curable composition, dicing-die bonding tape, connecting structure and method for producing semiconductor tape with cohesive/adhesive layer - Google Patents

Abstract

Disclosed is a curable composition having superior adhesive properties for cured material after curing. This curable composition comprises an epoxy resin, curing agent for epoxy resin, a first acrylic resin containing an epoxy group and having a weight-average molecular weight of 100,000 - 400,000 and a glass transition temperature of 60 DEG C or higher, a second acrylic resin containing an epoxy group and having a weight-average molecular weight of 10,000 - 20,000 and a glass transition temperature of 60 DEG C or higher and a nanofiller. In the total of 100 wt% for the epoxy resin, first acrylic resin containing an epoxy group and second acrylic resin containing an epoxy group, the content for the first acrylic resin containing an epoxy group is 10 - 40 wt%, and the content for the second acrylic resin containing an epoxy group is 1 - 35 wt%.

Description

Method for producing curable composition, dicing and die-bonding tape, bonded structure, and semiconductor chip with adhesive layer

technical field

The present invention relates to a curable composition containing an epoxy resin, a curing agent for epoxy resin, an epoxy group-containing acrylic resin, and a filler. Curable composition for bonding semiconductor chip adhesive layer applications, etc., and method for producing dicing and die-bonding tape, bonded structure, and adhesive layer-attached semiconductor chip using the curable composition .

Background technique

The miniaturization and performance enhancement of electronic devices such as semiconductor devices are currently being carried out. Accordingly, various curable compositions have been developed as adhesives for electronic devices. Epoxy resins are widely used as the material of the curable composition.

As an example of an epoxy resin-containing curable composition, Patent Document 1 below discloses a curable composition containing an epoxy resin, an acrylate rubber, and a latent curing agent.

Furthermore, specifically, the curable composition described above is used, for example, to bond a semiconductor chip to a substrate or another semiconductor chip. In order to facilitate this bonding operation, a method is known in which a semiconductor wafer is divided into individual semiconductor chips by a dicing method called a dicing method, and then a curable composition is used to obtain a chip with an adhesive layer. of semiconductor chips.

In the above-mentioned dicing-first method, first, dicing traces (切り込み) are formed on the surface of the semiconductor wafer without dividing the semiconductor wafer. Then, a protective sheet is attached to the surface of the semiconductor wafer on which the dicing marks were formed. Then, the back surface of the semiconductor wafer is ground to reach the dicing mark portion, and the thickness of the semiconductor wafer is reduced to separate individual semiconductor chips. A normal protective sheet is attached to the surface of the divided semiconductor wafer of the individual semiconductor chips.

A dicing and die-bonding tape is used in order to obtain semiconductor chips with an adhesive layer using the divided semiconductor wafer obtained by the dicing-first method. For example, Patent Documents 2 and 3 below disclose dicing and die-bonding tapes in which an adhesive sheet and a base material (dicing tape) are laminated. The adhesive sheet in the dicing and die-bonding tape is a die-bonding layer, and is a sheet for laminating an adhesive layer on a semiconductor chip to obtain a semiconductor chip with an adhesive layer.

prior art literature

patent documents

Patent Document 1: Japanese Patent No. 3342703

Patent Document 2: Japanese Patent Laid-Open No. 2005-260204

Patent Document 3: Japanese Patent Laid-Open No. 2006-080142

Contents of the invention

The problem to be solved by the invention

When obtaining a semiconductor chip with an adhesive layer using the dicing and die-bonding tape described in Patent Documents 2 and 3, the dicing and die-bonding tape is attached to the divided semiconductor wafer from the side of the adhesive sheet. Then, the adhesive sheet is modified by irradiation with laser light, heating or cooling, or the like. Next, the modified adhesive sheet is stretched, and the adhesive sheet is cut along the cut portion of the divided semiconductor wafer to separate the individual semiconductor chips to form a cut adhesive layer under the semiconductor chips. Thereafter, the semiconductor chip with the adhesive layer is peeled off from the base material and taken out. From the side of the adhesive layer, the semiconductor chip with the adhesive layer taken out is mounted on the substrate.

In the case of the dicing and die-bonding tape described in Patent Document 2, it is necessary to modify the adhesive sheet by heating or cooling before dicing the adhesive sheet. In the dicing and die-bonding tape described in Patent Document 3, it is necessary to modify the adhesive sheet by irradiating laser light such as electromagnetic waves before dicing the adhesive sheet. Therefore, for the dicing and die-bonding tapes described in Patent Documents 2 and 3, a step of modifying the adhesive sheet is required. As a result, a semiconductor chip with an adhesive layer cannot be obtained efficiently.

In addition, in the dicing and die-bonding tapes described in Patent Documents 2 and 3, when the adhesive sheet is stretched, the adhesive sheet may not be properly diced from a desired position. For example, it may not be possible to securely arrange the adhesive layer under the semiconductor chip. In this way, when the semiconductor chip with the adhesive layer is bonded to the member to be bonded, the semiconductor chip is inclined or the semiconductor chip cannot be bonded sufficiently.

In addition, when the semiconductor chips with adhesive layers obtained by using the dicing die-bonding tapes described in Patent Documents 2 and 3 are stacked and adhered to members to be bonded, the adhesiveness may be low. In addition, warping may occur on the semiconductor chip after bonding, or cracks may occur in the cured adhesive layer.

An object of the present invention is to provide a curable composition having excellent adhesiveness of a cured product after curing.

A limited object of the present invention is to provide a curable composition, a dicing and die-bonding tape using the curable composition, a bonded structure, and a method of manufacturing a semiconductor chip with an adhesive layer. For the curable composition, when obtaining a semiconductor chip with an adhesive layer, the adhesive layer formed by the curable composition is laminated on one side of the semiconductor wafer after division, and then the adhesive layer is When stretching, the pressure-sensitive adhesive layer can be cut with high precision.

Another limited object of the present invention is to provide a curable composition, and a dicing and die-bonding tape using the curable composition, a bonded structure, and a method of manufacturing a semiconductor chip with an adhesive layer. With this curable composition, when a semiconductor chip is laminated and bonded to a member to be bonded using an adhesive layer formed from the curable composition, the warping of the semiconductor chip can be suppressed, and the Cracks develop in the cured adhesive layer.

way of solving the problem

A broad aspect of the present invention provides a curable composition comprising: an epoxy resin, a curing agent for an epoxy resin, a weight-average molecular weight of 100,000 to 400,000, and a glass transition temperature of 60° C. or higher. The first epoxy group-containing acrylic resin, the second epoxy group-containing acrylic resin with a weight average molecular weight of 10,000 to 20,000 and a glass transition temperature of 60°C or higher, and nanofillers, in a total of 100% by weight of the above-mentioned In the epoxy resin, the above-mentioned first epoxy group-containing acrylic resin, and the above-mentioned second epoxy group-containing acrylic resin, the content of the above-mentioned first epoxy group-containing acrylic resin is 10 to 40% by weight, and the above-mentioned second epoxy group-containing acrylic resin The content of the base acrylic resin is 1 to 35% by weight.

In a certain aspect of the curable composition of the present invention, when the curable composition is formed into a sheet to obtain a sheet, the breaking stress of the sheet before curing at 23° C. is 6 MPa or less, and the sheet before curing The elongation at break of the above sheet at 23° C. is 200% or less.

In another specific aspect of the curable composition of the present invention, when the curable composition is formed into a sheet to obtain a sheet, the above-mentioned sheet before curing is heated from 40° C. to 200° C. at a temperature increase rate of 5° C./min. ℃, the minimum melt viscosity of 40~200℃ is above 1000Pa·s.

In yet another specific aspect of the curable composition of the present invention, the storage modulus at 180° C. of the cured product after curing is 40 MPa or more.

In yet another specific aspect of the curable composition of the present invention, the epoxy resin includes an epoxy resin having a polar group.

In another specific aspect of the curable composition of the present invention, the curable composition is shaped into a sheet.

In yet another specific aspect of the curable composition of the present invention, the curable composition is an adhesive for bonding a semiconductor chip to a member to be bonded.

The dicing and die-bonding tape of the present invention includes an adhesive layer formed of the curable composition according to the present invention, and a base material layer laminated on one side of the adhesive layer.

The bonded structure of the present invention is provided with: a semiconductor chip, a member to be bonded, and a cured product layer disposed between the semiconductor chip and the member to be bonded, wherein the cured product layer is obtained by combining the curable compound formed according to the present invention. formed by solidification.

The manufacturing method of the semiconductor chip with adhesive layer of the present invention, it has the following steps:

Using an adhesive layer formed from a curable composition according to the present invention and a divided semiconductor wafer of individual semiconductor chips, laminating the adhesive layer on one side of the divided semiconductor wafer;

By stretching the above-mentioned adhesive layer, cutting the above-mentioned adhesive layer along the cut portion of the above-mentioned divided semiconductor wafer, and separating the semiconductor chips one by one in the above-mentioned divided semiconductor wafer; and

In the state where the above-mentioned pressure-sensitive adhesive layer was laminated, the semiconductor chip with the above-mentioned pressure-sensitive adhesive layer was taken out.

In another specific aspect of the method of manufacturing a semiconductor chip with an adhesive layer according to the present invention, a dicing and die-bonding tape having the above-mentioned adhesive layer, and a layer laminated on the adhesive layer is used. A matrix material layer on one side of the mixture layer.

In another specific aspect of the method of manufacturing a semiconductor chip with an adhesive layer of the present invention, the adhesive layer is not modified before or during stretching of the adhesive layer. sex.

In yet another specific aspect of the method for manufacturing a semiconductor chip with an adhesive layer of the present invention, before or during stretching of the adhesive layer, the adhesive layer is not Heating and cooling or laser irradiation are performed to modify the pressure-sensitive adhesive layer.

The effect of the invention

The curable composition of the present invention contains an epoxy resin, a curing agent for epoxy resin, a first epoxy group-containing acrylic resin having a weight average molecular weight of 100,000 to 400,000 and a glass transition temperature of 60° C. The second epoxy group-containing acrylic resin with an average molecular weight of 10,000 to 20,000 and a glass transition temperature of 60° C. Within the range, the cured product after curing has excellent adhesiveness. Therefore, for example, when a semiconductor chip is bonded to a member to be bonded using the curable composition of the present invention, the bonding reliability between the semiconductor chip and the member to be bonded can be improved.

In addition, when using the curable composition of the present invention to obtain a semiconductor chip with an adhesive layer, the adhesive layer formed by the above-mentioned curable composition is laminated on one side of the semiconductor wafer after division, and then the adhesive layer is laminated. When the mixture layer is stretched, the adhesive layer can be accurately cut along the cut portion of the divided semiconductor wafer.

Description of drawings

[ Fig. 1] Fig. 1(a) and (b) are a partially cutaway plan view and a partially cutaway front sectional view showing a dicing and die-bonding tape according to a first embodiment of the present invention.

[ Fig. 2] Fig. 2(a) and (b) are a partially cutaway plan view and a partially cutaway front sectional view showing a dicing and die-bonding tape according to a second embodiment of the present invention.

[ FIG. 3 ] FIGS. 3( a ) to ( d ) are partial cutaway front cross-sectional views for explaining an example of each step for obtaining a laminate used for manufacturing a semiconductor chip with an adhesive layer.

[FIG. 4] FIGS. 4(a)-(b) are partial cutaway front cross-sectional views for explaining the process of manufacturing a semiconductor chip with an adhesive layer using the dicing and die-bonding tape according to the first embodiment of the present invention. An example of the method.

[FIG. 5] FIGS. 5(a)-(b) are partial cutaway front cross-sectional views for explaining the process of manufacturing a semiconductor chip with an adhesive layer using the dicing and die-bonding tape according to the first embodiment of the present invention. An example of the method.

[ Fig. 6] Fig. 6 is a cross-sectional view schematically showing a bonded structure using a curable composition according to an embodiment of the present invention.

Symbol Description

1…dicing and die-bonding tape

2…Release layer

2a...upper surface

3…Adhesive layer

3a...1st surface

3b...2nd surface

3c...cut part

4...Matrix material layer

4a...1st surface

4b...2nd surface

5…cut layer

5A...Matrix material

5B...Adhesive layer

11...dicing and die bonding tape

12...Matrix material layer

12A...Non-adhesive part

12B...Viscous part

12a...1st surface

12b...2nd surface

13…cut layer

21...Laminated body

22…Protection sheet

22a...one side

23...segmented semiconductor wafer

23A...semiconductor chip

23a...Surface

23b...Back

23c...cut part

25…Taiwan

26…cutting wheel

27…Taiwan

51...connection structure

52…semiconductor chip

53... Bonding object components

54...Cured material layer

Detailed ways

Hereinafter, the present invention will be described in detail.

(curable composition)

The curable composition of the present invention contains an epoxy resin, a curing agent for epoxy resins, a first epoxy group-containing acrylic resin, a second epoxy group-containing acrylic resin, and a nanofiller. The weight average molecular weight of the first epoxy group-containing acrylic resin is not less than 100,000 and not more than 400,000, and the glass transition temperature of the first epoxy group-containing acrylic resin is not less than 60°C. The weight-average molecular weight of the second epoxy group-containing acrylic resin is not less than 10,000 and not more than 20,000, and the glass transition temperature of the second epoxy group-containing acrylic resin is 60° C. or more. In a total of 100% by weight of the above-mentioned epoxy resin, the above-mentioned first epoxy group-containing acrylic resin, and the above-mentioned second epoxy group-containing acrylic resin, the content of the above-mentioned first epoxy group-containing acrylic resin is 10 to 40% by weight, In addition, the content of the second epoxy group-containing acrylic resin is 1 to 35% by weight. With such a composition, the cured product of the curable composition of the present invention has high adhesiveness. In addition, when an adhesive layer made of the above-mentioned curable composition is laminated on one side of the divided semiconductor wafer, and then the adhesive layer is stretched, the adhesive layer can be cut with high precision. In addition, when a semiconductor chip is laminated on a member to be bonded using an adhesive layer formed of a curable composition, warpage of the semiconductor chip can be suppressed, and cracks can be suppressed from occurring in the cured adhesive layer. .

〔Epoxy resin〕

The epoxy resin contained in the curable composition of the present invention is not particularly limited. It is preferable that the above-mentioned epoxy resin is an epoxy resin having a cyclic hydrocarbon skeleton in the main chain. By using an epoxy resin having a cyclic hydrocarbon skeleton in the main chain, the cured product after the curable composition is cured becomes rigid and blocks the movement of molecules in the cured product. In addition, the cured product exhibits excellent mechanical strength and heat resistance, and also exhibits excellent moisture resistance due to low water absorption.

The above-mentioned epoxy resin is not particularly limited, and examples thereof include: dicyclopentadiene-type epoxy resin, naphthalene-type epoxy resin, tetrahydroxyphenylethane-type epoxy resin, tetrakis(glycidyloxyphenyl ) ethane, and 3,4-epoxy-6-methylcyclohexylmethyl-3,4-epoxy-6-methylcyclohexane carbonate, etc. The above-mentioned epoxy resins may be used alone or in combination of two or more.

As said dicyclopentadiene type epoxy resin, the novolak epoxy resin etc. which have a dicyclopentadiene dioxide and a dicyclopentadiene skeleton are mentioned. Examples of the naphthalene-type epoxy resins include 1-glycidylnaphthalene, 2-glycidylnaphthalene, 1,2-diglycidylnaphthalene, 1,5-diglycidylnaphthalene, 1,6-diglycidylnaphthalene, Glyceryl naphthalene, 1,7-diglycidyl naphthalene, 2,7-diglycidyl naphthalene, triglycidyl naphthalene, and 1,2,5,6-tetraglycidyl naphthalene, etc.

From the point of view of further improving the adhesiveness of the cured product and stretching the adhesive layer laminated on one side of the divided semiconductor wafer, the adhesive layer can be cut with higher precision. Epoxy resins having polar groups are preferred. In addition, when stretching the pressure-sensitive adhesive layer laminated|stacked on the one side of the semiconductor wafer after said division|segmentation, the property which cut|disconnects this pressure-sensitive adhesive layer may be called split property.

The above-mentioned epoxy resin is preferably an epoxy resin having a polar group and a cyclic hydrocarbon skeleton.

As the said polar group in the said epoxy resin, a hydroxyl group, an amino group, an imino group, an amide group, a nitrile group, a carboxyl group, a carbonyl group etc. are mentioned. The polar group is preferably a hydroxyl group, an imino group, or a nitrile group from the viewpoint of further improving the adhesive force between the adhesive layer, the semiconductor chip, and the member to be bonded. By using an epoxy resin having a hydroxyl group, an imino group, and a nitrile group, curing reactivity decreases during storage before use of the adhesive layer, and polar groups are easily retained after storage.

The above-mentioned epoxy resin preferably has a free polar group. The above-mentioned "free" means that the polar group does not exist as a part of the bonded skeleton in the main chain, but exists in the side chain or terminal.

From the viewpoint of further improving the adhesiveness of the cured product and the splittability of the adhesive layer, the epoxy resin preferably includes an epoxy resin that is liquid at 23° C. (normal temperature).

From the viewpoint of further improving the adhesiveness of the cured product and the splittability of the adhesive layer, the epoxy resin preferably includes the epoxy resin having the polar group and the epoxy resin that is liquid at 23°C.

Moreover, it is preferable that the molecular weight of the said epoxy resin is less than 10,000. The "molecular weight" in the above-mentioned epoxy resin means that when the above-mentioned epoxy resin is not a polymer and the structural formula of the above-mentioned epoxy resin can be determined, the molecular weight can be calculated from the structural formula, and when the above-mentioned epoxy resin is a polymer, it is Refers to the weight average molecular weight.

It is preferable that content of the epoxy resin which has the said polar group is 10-100 weight% in 100 weight% of said epoxy resins. All of the above-mentioned epoxy resins may be the above-mentioned epoxy resins having a polar group. In 100% by weight of the above-mentioned epoxy resin, the more preferable lower limit of the content of the epoxy resin having the above-mentioned polar group is 30% by weight, and the more preferable upper limit is 80% by weight. If the content of the epoxy resin having the above-mentioned polar group satisfies the above-mentioned lower limit and upper limit, the adhesiveness of the cured product and the splitting property of the adhesive layer can be further improved.

The content of the liquid epoxy resin at 23° C. is preferably 10 to 100% by weight in 100% by weight of the epoxy resin. All of the above-mentioned epoxy resins may be the above-mentioned epoxy resins that are liquid at 23°C. In 100% by weight of the epoxy resin, the lower limit of the content of the liquid epoxy resin at 23° C. is more preferably 10% by weight, and the upper limit is more preferably 40% by weight. If the content of the liquid epoxy resin at 23° C. satisfies the above lower limit and upper limit, the adhesiveness of the cured product and the splitting property of the adhesive layer can be further improved.

[1st and 2nd epoxy group-containing acrylic resins]

The first epoxy group-containing acrylic resin contained in the curable composition of the present invention is not particularly limited as long as it has a weight average molecular weight of 100,000 to 400,000 and a glass transition temperature of 60° C. or higher. The second epoxy group-containing acrylic resin contained in the curable composition of the present invention is not particularly limited as long as it has a weight average molecular weight of 10,000 to 20,000 and a glass transition temperature of 60° C. or higher. The above-mentioned first and second epoxy group-containing acrylic resins may have an epoxy group at a terminal, or may have an epoxy group at a side chain (pendant position). The first and second epoxy group-containing acrylic resins may be used alone or in combination of two or more of them.

In addition to using the above-mentioned first epoxy group-containing acrylic resin with a relatively large weight-average molecular weight, by further using the above-mentioned second epoxy-group-containing acrylic resin with a relatively small weight-average molecular weight, in addition, by making the first and second ring-containing acrylic resins When the content of the oxyacrylic resin is within the above-mentioned specified range, when the adhesive layer attached to the divided semiconductor wafer is stretched, the adhesive layer can be accurately cut at a desired position. Even if the pressure-sensitive adhesive layer is stretched at normal temperature (23° C.), the pressure-sensitive adhesive layer can be cut with high precision. In addition, by using the above-mentioned second epoxy group-containing acrylic resin, when the adhesive layer formed of the above-mentioned curable composition is laminated and adhered to the bonding target member, the adhesiveness can be improved, and the occurrence of a problem in the semiconductor can be suppressed. Warpage occurs on the chip, or cracks are suppressed in the cured adhesive layer.

In addition, by using the above-mentioned first and second epoxy group-containing acrylic resins, film-forming properties before curing can be improved, and mechanical strength, heat resistance, and flexibility of cured products can be improved.

The above-mentioned epoxy group-containing acrylic resin can be obtained, for example, by copolymerizing an acrylic monomer having an epoxy group and an acrylic compound not having an epoxy group.

Glycidyl acrylate, glycidyl methacrylate, etc. are mentioned as an acrylic monomer which has the said epoxy group.

Examples of the acrylic compound having no epoxy group include ethyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, hydroxyethyl acrylate, and isobornyl acrylate.

In general, acrylic resins (acrylic polymers) are often produced by a solution polymerization method using a solvent as a medium. In the solution polymerization method, when a high-molecular-weight acrylic resin is produced, the viscosity of the solution increases extremely, and gelation may occur in some cases. Therefore, it is difficult to obtain a high molecular weight acrylic resin. In addition, in the solution polymerization method, since unreacted monomers tend to remain, it is necessary to remove the residual monomers and the solvent at the same time, making the production steps complicated.

For example, if glycidyl methacrylate (GMA) is used as an acrylic monomer having an epoxy group, and a large amount of GMA is added to other acrylic monomers for solution polymerization, due to the cohesion of the epoxy group itself, only Lower molecular weight (below 10,000) epoxy-containing acrylic resins can be obtained. If a high-molecular-weight epoxy group-containing acrylic resin is to be obtained, extreme viscosity increase or gelation as described above tends to occur.

On the other hand, with respect to the manufacture of epoxy group-containing acrylic resin, if the above-mentioned GMA etc. are used, water or a non-solvent is used as a medium, and the suspension polymerization method is carried out, a large number of epoxy groups can be obtained, and the molecular weight distribution is narrow, and High molecular weight epoxy-containing acrylic resin. The epoxy group-containing acrylic resin is a pure resin with almost no residual monomers. In addition, in such a method, the separation operation from the polymerization system is also easy, and the production steps are simplified.

Therefore, the above-mentioned first epoxy group-containing acrylic resin is preferably an epoxy group-containing acrylic resin obtained by a suspension polymerization method. By using the first epoxy group-containing acrylic resin obtained by the suspension polymerization method, the mechanical strength, heat resistance, and flexibility of the cured product can be further improved.

The weight average molecular weight of the said 1st epoxy group containing acrylic resin is 100,000 or more and 400,000 or less. If the weight-average molecular weight of the first epoxy group-containing acrylic resin is less than 100,000, the film-forming properties will be poor, and it will be difficult to use the sheet or adhesive layer formed of the curable composition as it is in sheet form. When the weight average molecular weight of the said 1st epoxy group containing acrylic resin exceeds 400,000, the sheet|seat before hardening or an adhesive layer will become hard too much. In this case, the split property of the pressure-sensitive adhesive layer deteriorates. Also, if the cured product becomes too hard, cracks are likely to occur in the cured product. The preferable lower limit of the weight average molecular weight of the said 1st epoxy group containing acrylic resin is 200,000, and the preferable upper limit is 300,000.

The weight average molecular weight of the said 2nd epoxy group containing acrylic resin is 10,000 or more and 20,000 or less. If the weight-average molecular weight of the second epoxy group-containing acrylic resin is less than 10,000, the film-forming properties will be poor, and it will be difficult to use the sheet or the adhesive layer formed of the curable composition as it is in the form of a sheet. If the weight-average molecular weight of the second epoxy group-containing acrylic resin exceeds 20,000, the sheet or adhesive layer before curing will become too hard. In this case, the split property of the pressure-sensitive adhesive layer deteriorates. Also, if the cured product becomes too hard, cracks are likely to occur in the cured product.

The glass transition temperature of the said 1st, 2nd epoxy group containing acrylic resin is 60 degreeC or more. If the glass transition temperature of the above-mentioned first and second epoxy group-containing acrylic resins is lower than 60° C., the sheet formed from the curable composition or the adhesive layer will have poor tensile properties. Specifically, the stress at break becomes too high, or the elongation at break becomes too high. The preferable lower limit of the glass transition temperature of the said 1st, 2nd epoxy group containing acrylic resin is 70 degreeC. The glass transition temperature of the first and second epoxy group-containing acrylic resins is preferably 100°C or lower. If the glass transition temperatures of the first and second epoxy group-containing acrylic resins satisfy the above upper limit, the sheet or the adhesive layer can be appropriately stretched to cut the sheet or the adhesive layer. For example, when obtaining a semiconductor chip with an adhesive layer, when the adhesive layer laminated on one side of the semiconductor wafer after division is stretched, the adhesive layer can be cut with high precision.

It is preferable that the epoxy group equivalent of the said 1st, 2nd epoxy group containing acrylic resin is 200-1000. When the epoxy group equivalent of the said 1st, 2nd epoxy group containing acrylic resin exceeds 200, the flexibility of hardened|cured material can fully be improved. If the epoxy group equivalent of the first and second epoxy group-containing acrylic resins is 1000 or less, the heat resistance and flexibility of the cured product can be further improved.

In the component X of the above-mentioned epoxy resin, the above-mentioned first epoxy group-containing acrylic resin and the above-mentioned second epoxy group-containing acrylic resin in a total of 100% by weight, the content of the above-mentioned first epoxy group-containing acrylic resin is 10 to 40% parts by weight. A more preferable lower limit of the content of the first epoxy group-containing acrylic resin in a total of 100% by weight of the component X is 15% by weight, and a more preferable upper limit is 35% by weight. If the content of the first epoxy group-containing acrylic resin satisfies the above lower limit and upper limit, the film-forming property of the sheet before curing, the handleability of the sheet, and the adhesiveness of the cured product after curing can be further improved. In addition, the above-mentioned sheet or adhesive layer may be appropriately stretched to cut the above-mentioned sheet or adhesive layer. In addition, by using the adhesive layer formed from the above-mentioned curable composition, when the semiconductor chip is laminated and bonded to the bonding object member, the semiconductor chip becomes less likely to be peeled off due to warping, and the hardness of the cured product can be further improved. Mechanical strength, heat resistance, and flexibility can suppress cracks in the cured adhesive layer.

In the component X of the above-mentioned epoxy resin, the above-mentioned first epoxy group-containing acrylic resin and the above-mentioned second epoxy group-containing acrylic resin in a total of 100% by weight, the content of the above-mentioned second epoxy group-containing acrylic resin is 1 to 35% weight%. A more preferable lower limit of the content of the second epoxy group-containing acrylic resin is 5% by weight, and a more preferable upper limit is 30% by weight in a total of 100% by weight of the above-mentioned component X. If the content of the second epoxy group-containing acrylic resin satisfies the above-mentioned lower limit and upper limit, the film-forming properties of the sheet before curing, the handleability of the sheet, and the adhesiveness of the cured product after curing can be further improved. In addition, the above-mentioned sheet or adhesive layer may be appropriately stretched to cut the above-mentioned sheet or adhesive layer. In addition, by using the adhesive layer formed from the above-mentioned curable composition, when the semiconductor chip is laminated and bonded to the bonding object member, the semiconductor chip becomes less likely to be warped and peeled off, and the mechanical properties of the cured product can be further improved. Strength, heat resistance, and flexibility suppress cracks in the cured adhesive layer.

〔Nanofiller〕

The curable composition of the present invention contains a nanofiller. The nanofiller is not particularly limited as long as it is nanosized. The above nanofillers may be used alone or in combination of two or more.

The aforementioned nanofillers have a thickening effect and also function as a thickening agent. By using the above-mentioned second epoxy group-containing acrylic resin, when heating and melting the curable composition, and the sheet or pressure-sensitive adhesive layer formed from the curable composition, it tends to flow excessively easily. In the curable composition of the present invention, since nano fillers are used in addition to the above-mentioned second epoxy group-containing acrylic resin, it is possible to make the curable composition and the sheet or sheet formed from the curable composition The fluidity of the pressure-sensitive adhesive layer when heating and melting is controlled within a preferable range. In this way, when a curable composition or an adhesive layer is used for bonding, since the fluidity of the adhesive layer during heating and melting can be controlled within a preferable range, the restraint of the semiconductor chip during curing can be improved. Therefore, the adhesiveness of the cured product after curing can be improved.

Silica, alumina, calcium carbonate, etc. are mentioned as said nanofiller. The aforementioned nanofiller is preferably silica with few impurities such as alkali metals and transition metals.

The average particle diameter of the above-mentioned nano filler is not less than 1 nm and less than 1000 nm. The average particle diameter of the nanofiller has a preferable lower limit of 5 nm, a preferable upper limit of 300 nm, a more preferable upper limit of 100 nm, and a more preferable upper limit of 50 nm. It is especially preferable that the average particle diameter of the above-mentioned nano filler is 100 nm or less. If the average particle diameter of the above-mentioned nanofiller satisfies the above-mentioned lower limit, when using a curable composition or an adhesive layer for bonding, since the fluidity of the adhesive layer during heating and melting can be controlled within a preferred range, it is possible By improving the restraint of the semiconductor chip during curing, the adhesiveness of the cured product after curing can be improved. If the average particle diameter of the nanofiller satisfies the above upper limit, it is possible to reduce unevenness in thickness of a sheet formed from a curable composition or an adhesive layer. In addition, when the average particle diameter of the nanofiller is 300 nm or less, the fragmentation property can be further improved, and if the average particle diameter of the nanofiller is 100 nm or less, the fragmentation property can be significantly improved. In addition, it is possible to cope with the thinning of the above-mentioned sheet or pressure-sensitive adhesive layer. For example, the thickness of the sheet or the pressure-sensitive adhesive layer is 1 μm to 20 μm, which can reduce unevenness in thickness and can exhibit high adhesiveness.

The above-mentioned "average particle diameter" refers to the average primary particle diameter measured by a transmission electron microscope. The "average particle diameter" of the above nanofiller was obtained by observing 1000 arbitrary nanofillers with a transmission electron microscope, and calculating the number average of the measured particle diameters. In addition, the particle diameter measured by observation with a transmission electron microscope refers to the equivalent circle diameter (diameter) when the nanofiller approximates a circle.

It is preferable that content of the said nanofiller is 1-30 weight part with respect to 100 weight part of said epoxy resins. With respect to 100 parts by weight of the above-mentioned epoxy resin, a more preferable lower limit of the content of the nanofiller is 5 parts by weight, and a more preferable upper limit is 20 parts by weight. If the content of the above-mentioned nanofiller satisfies the above-mentioned lower limit and upper limit, the fluidity of the curable composition and the sheet or adhesive layer formed from the curable composition can be controlled within a more preferable range when heated and melted, and further Improve the adhesiveness of the cured product. When using a curable composition or an adhesive layer for bonding, since the fluidity of the adhesive layer during heating and melting can be controlled within a preferred range, the restraint of the semiconductor chip during curing can be improved, thereby improving The adhesiveness of the cured product after curing.

〔Curing agent for epoxy resin〕

Examples of the curing agent for epoxy resins include heat-curable acid anhydride curing agents such as trialkyltetrahydrophthalic anhydride, phenolic curing agents, amine curing agents, and latent curing agents such as dicyandiamide. , and cationic catalyst curing agent. The above curing agents may be used alone or in combination of two or more.

Specific examples of the heat-curable curing agent that is liquid at room temperature include, for example, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadic anhydride, or trialkyl Anhydride curing agent such as tetrahydrophthalic anhydride. Among these, methylnadic anhydride or trialkyltetrahydrophthalic anhydride is preferably used from the viewpoint of hydrophobization.

In order to adjust the curing rate, the physical properties of the cured product, etc., a curing accelerator may be used together with the above-mentioned curing agent.

There are no particular limitations on the above-mentioned curing accelerators. As said hardening accelerator, an imidazole hardening accelerator, a tertiary amine hardening accelerator, etc. are mentioned, for example. Among these, it is preferable to use an imidazole-based curing accelerator, because when using an imidazole-based curing accelerator, it is possible to easily adjust the curing speed, the physical properties of a cured product, and the like. These curing accelerators may be used alone or in combination of two or more.

There are no particular limitations on the above-mentioned imidazole-based curing accelerators. As the above-mentioned imidazole curing accelerator, for example: 1-cyanoethyl-2-phenylimidazole obtained by protecting the 1-position of imidazole with cyanoethyl group, or 1-cyanoethyl-2-phenylimidazole obtained by protecting the base with isocyanuric acid. The product and the like obtained under the trade name "2MAOK-PW" (manufactured by Shikoku Chemical Industry Co., Ltd.). These imidazole-based curing accelerators may be used alone or in combination of two or more.

The above-mentioned curing agent can be used in an appropriate content according to the types of the epoxy resin and curing agent, the oxygen equivalent, and the like. In terms of the amount of curing agent added, when an acid anhydride type curing agent is used in combination with a curing accelerator such as an imidazole type curing accelerator, the amount of the acid anhydride type curing agent added is preferably 60 to 100% of the theoretically necessary equivalent to the epoxy group. %, more preferably 70 to 90%. If the amount of the acid anhydride-based curing agent added is more than necessary, there is a possibility that chloride ions are likely to be eluted from the cured product due to moisture. By setting the content of the curing agent in an appropriate range, the curable composition can be cured efficiently, and residues derived from the curing agent are less likely to be generated in the cured product.

The content of the curing accelerator is preferably 0.5 to 20 parts by weight relative to 100 parts by weight of the curing agent. The curable composition can be hardened efficiently as content of a hardening accelerator is more than the said minimum. When content of a hardening accelerator is below the said upper limit, hardening accelerator will not remain easily, and the joining reliability of hardened|cured material can be improved.

[other ingredients]

The curable composition of the present invention may further contain rubber particles, thermoplastic resins, thermosetting resins other than epoxy resins, adhesion enhancers, pH adjusters, ion scavengers, viscosity adjusters, fluid Various additives such as denaturation imparting agents, antioxidants, heat stabilizers, light stabilizers, UV absorbers, colorants, dehydrating agents, flame retardants, antistatic agents, antifungal agents, preservatives, and solvents.

〔Detailed description of curable composition〕

The curable composition of the present invention is preferably an adhesive. The curable composition comprising the above-mentioned epoxy resin, the above-mentioned curing agent for epoxy resin, the above-mentioned first and second epoxy group-containing acrylic resins, and the above-mentioned nanofiller is preferably viscous before curing and exhibits adhesion after curing. Sexual adhesive.

The curable composition of the present invention is preferably shaped into a sheet, preferably a sheet-shaped adhesive (adhesive layer), because of its excellent handleability.

When the curable composition of the present invention is formed into a sheet to obtain a sheet, the breaking stress at 23° C. of the sheet before curing is preferably 6 MPa or less. A more preferable upper limit of the fracture stress is 4 MPa. On the other hand, the above-mentioned breaking stress is preferably 1 MPa or more. If the above breaking stress satisfies the above upper limit, the splitting property of the sheet or the pressure-sensitive adhesive layer can be further improved. If the fracture stress satisfies the above lower limit, the film-forming efficiency of the sheet or the pressure-sensitive adhesive layer can be improved, and the handleability of the sheet or the pressure-sensitive adhesive layer can be further improved.

When the curable composition of the present invention is formed into a sheet to obtain a sheet, the elongation at break of the sheet before curing at 23° C. is preferably 200% or less. A more preferable upper limit of the elongation at break is 100%, and a more preferable upper limit is 50%. On the other hand, the above elongation at break is preferably 1% or more. When the above-mentioned elongation at break satisfies the above-mentioned upper limit, the splitting property of the sheet or the pressure-sensitive adhesive layer can be further improved. If the above-mentioned elongation at break satisfies the above-mentioned lower limit, the film-forming efficiency of the sheet or the pressure-sensitive adhesive layer can be improved, and the handleability of the sheet or the pressure-sensitive adhesive layer can be further improved.

When the curable composition of the present invention is formed into a sheet to obtain a sheet, it is preferred that when the sheet before curing is heated from 40°C to 200°C at a heating rate of 5°C/min, the minimum melt viscosity at 40°C to 200°C is More than 1000Pa·s. The minimum melt viscosity at 40° C. to 200° C. is more preferably 1500 Pa·s or higher, and still more preferably 2000 Pa·s or higher. On the other hand, the aforementioned minimum melt viscosity is preferably 20000 Pa·s or less. If the above-mentioned minimum melt viscosity satisfies the above-mentioned lower limit, when the curable composition or the adhesive layer is used for bonding, since the fluidity of the curable composition or the adhesive layer when heated and melted can be controlled within a preferable range , can improve the restraint of the semiconductor chip during curing, thereby improving the adhesiveness of the cured product after curing. In particular, if the above-mentioned minimum melt viscosity at 40 to 200° C. is 1500 Pa·s or more, the adhesiveness of the cured product can be sufficiently improved. If the above minimum melt viscosity satisfies the above upper limit, the adhesiveness of the cured product can be further improved. In addition, when the member to be bonded has unevenness on the surface, the sheet or adhesive layer formed of the curable composition can be sufficiently filled in the concave portion of the surface, making it more difficult to generate voids at the bonding interface.

The above-mentioned minimum melt viscosity is a value at 40 to 200°C. The reason for using this temperature range is to heat the curable composition and the sheet or adhesive layer formed from the curable composition from normal temperature to about 200° C. when curing the curable composition.

It is preferable that the storage elastic modulus at 180° C. of the cured product after curing the curable composition of the present invention is 40 MPa or more. A more preferable lower limit of the storage elastic modulus is 100 MPa. On the other hand, it is preferable that the storage elastic modulus is 1000 MPa or less. If the storage elastic modulus satisfies the above upper limit, the cured product will not become too hard, and the flexibility and bonding reliability can be further improved. If the storage elastic modulus satisfies the above lower limit, the rigidity of the laminate of the cured product of the adhesive layer and the semiconductor chip can be increased by increasing the elasticity of the cured product, and ultrasonic bonding in the wire bonding step can be efficiently performed.

The curable composition of the present invention can be used for bonding various members to be bonded. The curable composition of the present invention is suitable for use in bonding a semiconductor chip to a member to be bonded.

Examples of the bonding object member include a substrate, a semiconductor chip, a lead frame, and the like. Preferably, the bonding target member is a substrate or a semiconductor chip. As said substrate, a ceramic substrate, a resin substrate, a silicone substrate, a semiconductor substrate, a glass substrate, etc. are mentioned.

(connection structure)

As described above, the curable composition of the present invention is preferably used for bonding a semiconductor chip to a member to be bonded.

FIG. 6 is a schematic cross-sectional view showing a bonded structure using a curable composition according to one embodiment of the present invention.

The bonded structure 51 shown in FIG. 6 has a semiconductor chip 52 , a member to be bonded 53 , and a cured material layer 54 provided between the semiconductor chip 52 and the member to be bonded 53 . The cured material layer 54 can be formed by curing the curable composition described above. The semiconductor chip 52 and the member 53 to be bonded are bonded to the cured material layer 54 . When obtaining the bonded structure 51, the above-mentioned curable composition may be molded into a sheet and used in the form of a sheet, or may be used as a liquid or sheet-like adhesive.

In the bonded structure 51, the hardened|cured material layer 54 is formed by hardening the said curable composition, Since the hardened|cured material layer 54 has high adhesiveness, it is excellent in connection reliability.

(dicing and die bonding tape)

The dicing and die-bonding tape of the present invention has an adhesive layer formed of the above curable composition, and a dicing layer laminated on one side of the adhesive layer.

1( a ) and ( b ) are diagrams schematically showing a dicing and die-bonding tape according to a first embodiment of the present invention. Fig. 1 (a) is a partially cut-off plan view, and Fig. 1 (b) is a partially cut-off front sectional view along line I-I in Fig. 1 (a).

The dicing and die-bonding tape 1 shown in FIGS. 1( a ) and ( b ) has an elongated release layer 2 . On the upper surface 2a of the mold release layer 2, the adhesive layer 3, the base material layer 4, and the dicing layer 5 are laminated|stacked in this order. The base material layer 4 is laminated|stacked on the 1st surface 3a of one side of the adhesive layer 3. As shown in FIG. The first surface 4 a of the base material layer 4 is attached to the adhesive layer 3 , and the dicing layer 5 is attached to the second surface 4 b of the base material layer 4 opposite to the first surface 4 a. The second surface 3b on the side opposite to the first surface 3a of the pressure-sensitive adhesive layer 3 is a surface to which a semiconductor wafer is attached.

On the upper surface 2a of the elongated release layer 2, a plurality of laminates having the pressure-sensitive adhesive layer 3, the base material layer 4, and the dicing layer 5 are arranged at regular intervals. A protective sheet may be provided on the upper surface 2a of the mold release layer 2 on the side surface of this laminate.

The planar shapes of the adhesive layer 3, the base material layer 4, and the dicing layer 5 are circular. The pressure-sensitive adhesive layer 3 is smaller than the release layer 2, the base material layer 4, and the dicing layer 5 in plan view. In a plan view, the base material layer 4 is smaller than the release layer 2 and the cutting layer 5 . In plan view, the cutting layer 5 is smaller than the release layer 2 . The release layer 2 has a region protruding to the side of the outer peripheries of the adhesive layer 3 , base material layer 4 , and dicing layer 5 .

In this embodiment, the base material layer 4 is non-adhesive. In this way, the semiconductor chip with the adhesive layer 3 can be easily peeled from the base material layer 4 without a modification step such as irradiating the adhesive layer with UV to lower the adhesive force.

The above-mentioned "non-adhesive" includes not only non-tackiness on the surface but also a case where the surface is tacky to the extent that it does not stick when touched with a finger. Specifically, "non-adhesive" means that the non-adhesive part of the base material layer is attached to the stainless steel plate, and when the base material layer is peeled off at a peeling speed of 300mm/min, the adhesive force is about 0.05N/25mm or less .

The dicing layer 5 has a base material 5A, and an adhesive layer 5B laminated on one side of the base material 5A. The dicing layer 5 has a region protruding to the side of the outer periphery of the adhesive layer 3 and the base material layer 4 . From the adhesive layer 5B side, the dicing layer 5 is attached to the upper surface 2 a of the mold release layer 2 in the protruding area, and the central area is attached to the second surface 4 b of the base material layer 4 . When cutting, a cutting wheel is attached to the adhesive layer 5B of the cutting layer 5 .

FIG. 2 is a diagram schematically showing a dicing and die-bonding tape according to a second embodiment of the present invention. Fig. 2(a) is a partially cut-off plan view, and Fig. 2(b) is a partially cut-off front sectional view along line I-I in Fig. 2(a).

The dicing and die-bonding tape 11 shown in FIGS. 2( a ) and ( b ) is configured in the same manner as the dicing and die-bonding tape 1 except that the base material layer and the dicing layer are different.

The dicing and die-bonding tape 11 has a base material layer 12 and a dicing layer 13 . On the upper surface 2a of the mold release layer 2, the pressure-sensitive adhesive layer 3, the base material layer 12, and the dicing layer 13 are laminated|stacked in this order. The base material layer 12 is laminated|stacked on the 1st surface 3a which is one side of the adhesive layer 3. As shown in FIG. The first surface 12a of the base material layer 12 is attached to the adhesive layer 3, and the dicing layer 13 is attached to the second surface 12b of the base material layer 12 opposite to the first surface 12a.

The planar shapes of the base material layer 12 and the dicing layer 13 are circular. The adhesive layer 3 is smaller than the mold release layer 2, the base material layer 12, and the cutting layer 13 in plan view. In plan view, the base material layer 12 has substantially the same size as the cutting layer 13 . The base material layer 12 and the dicing layer 13 are smaller than the release layer 2 in plan view. The release layer 2 has a region that protrudes further outside the outer peripheral side surfaces of the adhesive layer 3 , the base material layer 12 , and the dicing layer 13 .

In this embodiment, the base material layer 12 has 12 A of non-adhesive non-adhesive parts. The non-adhesive portion 12A is provided in the central region of the base material layer 12 . The non-adhesive portion 12A is provided at a portion corresponding to the position of the adhesive layer 3 where the semiconductor wafer is attached. The planar shape of the non-adhesive portion 12A is circular. The non-adhesive portion 12A is larger than the adhesive layer 3 in plan view. Thus, the non-adhesive portion 12A has a region protruding outward from the outer peripheral side surface of the pressure-sensitive adhesive layer 3 . In this way, when the adhesive layer 3 is attached to one surface of the divided semiconductor wafer, the divided semiconductor wafer can be accurately positioned on the portion of the adhesive layer 3 where the non-adhesive portion 12A is attached. After sticking, the non-adhesive portion 12A can be reliably arranged on the second surface 3b of the adhesive layer 3 stuck on the divided semiconductor wafer. In this way, after the adhesive layer 3 is cut, it is not necessary to irradiate the semiconductor chip with the adhesive layer 3 with UV to reduce the adhesive force, etc., to modify the adhesive layer. The non-adhesive portion 12A of the base material layer 12 is peeled off. Thereby, production loss can be reduced and productivity can be improved.

The base material layer 12 has an adhesive adhesive portion 12B in the area of the outer portion of the non-adhesive portion 12A. The viscous part 12B is ring-shaped. The base material layer 12 covers the adhesive layer 3 . Non-adhesive portion 12A of base material layer 12 is attached to first surface 3 a of adhesive layer 3 , and adhesive portion 12B of base material layer 12 is attached to upper surface 2 a of mold release layer 2 . The non-adhesive portion 12A of the base material layer 12 is laminated on the entire surface of the adhesive layer 3 . The adhesive portion 12B is not laminated on the surface of the adhesive layer 3 . When cutting, a cutting wheel is attached to the adhesive portion 12B of the base material layer 12 .

The non-adhesive portion 12A and the adhesive portion 12B of the base material layer 12 are integrally formed. The non-adhesive portion 12A and the adhesive portion 12B may be formed of the same material or may be formed of different materials.

The dicing layer 13 consists only of a base material, and does not have an adhesive layer. In addition to the cutting layer 13 it is also possible to use the cutting layer 5 .

The release layer 2 is, for example, a release film. The release layer 2 is used to protect the second surface 3b of the adhesive layer 3 on which the semiconductor wafer is attached. It should be noted that it is not necessary to use the release layer 2 .

As the material constituting the mold release layer 2, polyester resins such as polyethylene terephthalate film, polytetrafluoroethylene resin, polyethylene resin, polypropylene resin, polymethylpentene resin, poly Polyolefin resins such as vinyl acetate resins, plastic films such as polyvinyl chloride resins and polyimide resins, etc.

The surface of the release layer 2 may be subjected to a release treatment. The release layer can be single layer or multilayer. When the release layer has multiple layers, each layer may be formed of different resins.

The thickness of the release layer 2 is preferably within a range of 10 to 100 μm, and more preferably within a range of 25 to 50 μm, from the viewpoint of further improving the handleability or peelability of the release layer 2 .

The adhesive layer 3 is a layer used for bonding of semiconductor chips. The adhesive layer 3 is used to bond the semiconductor chip to the substrate or other semiconductor chips.

The pressure-sensitive adhesive layer 3 is formed from the curable composition described above. The dicing and die-bonding tape 1 , 11 is used to obtain semiconductor chips with an adhesive layer 3 . After the semiconductor chip with the adhesive layer 3 is obtained, the obtained semiconductor chip with the adhesive layer 3 is laminated on a member to be bonded, such as a substrate, from the adhesive layer 3 side. Then, by applying heat or light energy, the adhesive layer 3 is cured, and the semiconductor chip can be firmly bonded to the member to be bonded via the adhesive layer 3 .

The thickness of the adhesive layer 3 is not particularly limited. The thickness of the adhesive layer 3 is preferably within a range of 1 to 100 μm. A more preferable lower limit of the thickness of the pressure-sensitive adhesive layer 3 is 3 μm, and a more preferable upper limit is 60 μm. When the thickness of the pressure-sensitive adhesive layer 3 is within the above-mentioned range, the attachment of the semiconductor chip is relatively easy, and further, it is possible to cope with thinning of the semiconductor device.

The base material layers 4 and 12 can be formed using, for example, a composition having active energy ray-curable or heat-curable viscosity. In the case of using an active energy ray-curable composition, the viscosities of the base material layers 4 and 12 can be partially varied by partially adjusting the irradiation amount of active energy rays to irradiate the composition. In order to make the base material layer non-tacky, it is only necessary to increase the irradiation dose of active energy rays. In order to make the base material layer sticky, it is not necessary to irradiate the active energy ray or to reduce the irradiation amount of the active energy ray.

Preferably, the base material layers 4 and 12 are formed from a composition containing an acrylic polymer. The base material layers 4 and 12 are preferably formed of a crosslinked body obtained by crosslinking a composition containing an acrylic polymer. In this case, the splittability of the pressure-sensitive adhesive layer can be further improved. In addition, the polarity, storage modulus, or elongation at break of the base material layers 4 and 12 can be easily controlled and designed.

There are no particular limitations on the aforementioned acrylic polymer. Preferably, the above-mentioned acrylic polymer is an alkyl (meth)acrylate polymer. As the alkyl (meth)acrylate polymer, an alkyl (meth)acrylate polymer having an alkyl group having 1 to 18 carbon atoms is preferably used. By using an alkyl (meth)acrylate polymer having an alkyl group having 1 to 18 carbon atoms, the polarity of the base material layers 4, 12 can be sufficiently reduced, and the surface energy of the base material layers 4, 12 can be further reduced, In addition, the peelability of the base material layers 4 and 12 of the pressure-sensitive adhesive layer 3 can be improved.

The above composition preferably contains at least one of an active energy ray reaction initiator and a thermal reaction initiator, and more preferably contains an active energy ray reaction initiator. The active energy ray reaction initiator is preferably a photoreaction initiator.

The above active energy rays include ultraviolet rays, electron beams, alpha rays, beta rays, gamma rays, X rays, infrared rays and visible rays. Among these active energy rays, ultraviolet rays or electron beams are preferable because they are excellent in curability and hardened products are not easily deteriorated.

As said photoreaction initiator, a photoradical generator, a photocation generator, etc. can be used, for example. As said thermal reaction initiator, a thermal radical generating agent etc. are mentioned. An isocyanate-based crosslinking agent for controlling adhesive force may be added to the above composition.

The thickness of the base material layers 4 and 12 is not particularly limited. The thickness of the base material layers 4 and 12 is preferably within a range of 1 to 100 μm. A more preferable lower limit of the thickness of the base material layers 4 and 12 is 5 μm, and a more preferable upper limit is 60 μm. If the thickness of the base material layers 4 and 12 satisfies the above-mentioned preferable lower limit, it is possible to further improve the splittability and stretchability at the time of dicing. If the thickness of the base material layers 4 and 12 satisfies the above-mentioned preferred upper limit, the thickness can be made more uniform, and the precision of cutting can be further improved.

The dicing layers 5 and 13 are, for example, dicing films. Examples of materials for the base material 5A of the dicing layer 5 and the dicing layer 13 include polyester resins such as polyethylene terephthalate film, polytetrafluoroethylene resin, polyethylene resin, polypropylene resin, polymethor Polyolefin resins such as pentene resin and polyvinyl acetate resin, plastic films such as polyvinyl chloride resin and polyimide resin, etc. Among them, polyolefin-based resins are preferably used because they are excellent in stretchability and have a small environmental load.

Examples of the material of the adhesive layer 5B of the dicing layer 5 include polyacrylic adhesives, special synthetic rubber adhesives, synthetic resin adhesives, and rubber adhesives. Among them, an acrylic adhesive or a rubber adhesive is preferred, an acrylic adhesive is more preferred, and a pressure-sensitive acrylic adhesive is further preferred. When an acrylic adhesive is used, the adhesive force of the adhesive layer 5B to the base material layer 4, the adhesion of the adhesive layer 5B to the cutting wheel, and the re-peeling when peeling off from the cutting wheel can be improved. sex. In addition, the manufacturing cost of the adhesive layer 5B can be reduced.

The thickness of the cutting layers 5 and 13 is not particularly limited. Preferably, the thickness of the cutting layers 5 and 13 is in the range of 10 to 200 μm. A more preferable lower limit of the thickness of the dicing layers 5 and 13 is 60 μm, and a more preferable upper limit is 150 μm. If the thickness of the dicing layers 5 and 13 is within the above range, the peelability from the mold release layer 2 and the stretchability of the dicing layers 5 and 13 can be further improved. In addition, the thickness of the dicing layer 5 represents the total thickness of the base material 5A and the adhesive layer 5B.

Dicing and die-bonding tapes 1 , 11 use dicing layers 5 , 13 . It is also possible to omit the dicing layers 5 and 13 and make the base material layers 4 and 12 also serve as dicing layers. Especially in the dicing and die-bonding tape 11 , since the dicing wheel can be attached to the adhesive portion 12B of the base material layer 12 , it is not necessary to attach the dicing wheel to the dicing layer 13 . Since there is no need to attach a cutting wheel on the cutting layer 13, the cutting layer 13 may not have adhesive force. In this way, the material and composition constituting the dicing layer 13 can be selected from a wider range.

When dicing, since the semiconductor chip can be more effectively prevented from flying off, etc., and more uniform stretchability can be obtained, it is preferable to use the opposite side to the side where the adhesive layer 3 is attached to the base material layer 4,12. A cutting layer 5 is pasted on one side surface.

(Manufacturing method of semiconductor chip with adhesive layer)

Next, an example of a method of manufacturing a semiconductor chip with an adhesive layer when the dicing die-bonding tape 1 shown in FIGS. 1( a ) and ( b ) is used will be described below.

First, the dicing and die-bonding tape 1 and the laminated body 21 are prepared.

As shown in FIG. 3( d ), the laminate 21 has a protective sheet 22 and a divided semiconductor wafer 23 laminated on one surface 22 a of the protective sheet 22 . The protective sheet 22 is laminated on the surface 23 a which is one side of the semiconductor wafer 23 after division. After division, the semiconductor wafer 23 is divided into individual semiconductor chips. The planar shape of the semiconductor wafer 23 after division is circular.

The laminated body 21 can be obtained as follows through each step shown in FIGS. 3( a ) to ( d ).

First, as shown in FIG. 3( a ), a semiconductor wafer 23A is prepared. The semiconductor wafer 23A is a semiconductor wafer before division. The planar shape of the semiconductor wafer 23A is circular. On the surface 23a of the semiconductor wafer 23A, circuits for constituting individual semiconductor chips are formed in each region divided into a matrix by trenches.

As shown in FIG. 3(b), the prepared semiconductor wafer 23A is diced from the surface 23a side. After dicing, the semiconductor wafer 23A is not broken. On the surface 23a of the semiconductor wafer 23A, dicing traces 23c for dividing individual semiconductor chips are formed. Cutting is performed using, for example, a cutting device or the like having a knife rotating at high speed.

Next, as shown in FIG. 3( c ), the protective sheet 22 is attached to the surface 23 a of the semiconductor wafer 23A. Then, the back surface 23b of the semiconductor wafer 23A is ground to reduce the thickness of the semiconductor wafer 23A. Here, the back surface 23b of the semiconductor wafer 23A is ground up to the dicing marks 23c. As described above, the laminated body 21 shown in FIG. 3( d ) can be obtained.

It is preferable to grind the back surface 23b of the semiconductor wafer 23A up to the dicing mark 23c portion. Grinding is performed using, for example, a grinder such as a grinder equipped with a grinding magnet or the like. During grinding, since the protective sheet 22 is attached to the surface 23a of the semiconductor wafer 23A, grinding dust does not adhere to the circuit. In addition, even if the semiconductor wafer 23A is divided into individual semiconductor chips after grinding, the plurality of semiconductor chips are attached to the protective sheet 22 as they are without being disassembled.

After the laminated body 21 is obtained, as shown in FIG. 4( a ), the laminated body 21 is mounted on a stage 25 from the protective sheet 22 side. On the table 25 , an annular cutoff wheel 26 is provided at a position at a certain distance from the outer peripheral side of the semiconductor wafer 23 after division. While peeling off the release layer 2 of the dicing and die-bonding tape 1, the second surface 3b of the exposed adhesive layer 3 is attached to the back surface 23b of the divided semiconductor wafer 23, or after the release layer 2 is peeled off. , attach the exposed second surface 3b of the adhesive layer 3 to the rear surface 23b of the semiconductor wafer 23 after division. Thereby, the adhesive layer 3 is laminated|stacked on the back surface 23b which is one surface of the semiconductor wafer 23 after division|segmentation. In addition, the exposed adhesive layer 5B of the dicing layer 5 is attached to the dicing wheel 26 .

Then, as shown in FIG. 4( b ), the divided semiconductor wafer 23 to which the adhesive layer 3 is attached is taken out from the stage 25 and turned over. At this time, the cutting wheel 26 is taken out in a state where the cutter wheel 26 is attached to the adhesive layer 5B. The taken out divided semiconductor wafer 23 is turned over so that the surface 23 a is on the upper side, and is placed on another stage 27 .

Next, as shown in FIG. 5( a ), the protection sheet 22 is peeled off from the surface 23 a of the semiconductor wafer 23 after division. After the adhesive layer 3 is laminated on the rear surface 23b of the semiconductor wafer 23 after division, and before the adhesive layer 3 is stretched, the protective sheet 22 is peeled off. When peeling the protective sheet 22, the protective sheet 22 may be heated if necessary in order to peel it off easily. However, it is preferable not to modify the adhesive layer 3 when the protective sheet 22 is heated.

Then, as shown in Fig. 5(b), the adhesive layer 3 is stretched and cut. At this time, dicing is performed along the cut portion 23 c of the divided semiconductor wafer 23 , and the individual semiconductor chips in the divided semiconductor wafer 23 are separated. Since the adhesive layer 3 is attached to the rear surface 23b of the divided semiconductor wafer 23, the adhesive layer 3 can be cut along the cut portion 23c of the divided semiconductor wafer 23, that is, along the cutting line. After the adhesive layer 3 is cut, a cut portion 3 c is formed on the adhesive layer 3 .

It should be noted that, in this specification, the process of cutting the stretched adhesive layer 3 is also referred to as splitting. The operation of stretching and cutting the adhesive layer 3 (slitting) also includes dicing, and the dicing and die-bonding tape 1 may be used to stretch the adhesive layer 3 and perform cutting (slitting). In other words, the dicing and die-bonding tape 1 is a cleavage-bonding tape.

As a method of stretching the adhesive layer 3, for example, from the bottom of the adhesive layer 3 to the top, the adhesive layer 3, the base material layer 4 and the cutting layer 5 are applied as shown in Figure 5 (b) The method of force A is shown. As a result of applying the force A, forces B1 and B2 pulling outward are applied to the adhesive layer 3 , base material layer 4 , and dicing layer 5 , and the adhesive layer 3 is stretched.

The adhesive layer 3 is formed by the above-mentioned curable composition containing an epoxy resin, a curing agent for an epoxy resin, a specific first epoxy group-containing acrylic resin, a specific second epoxy group-containing acrylic resin, and a specific second epoxy group-containing acrylic resin. Resin, and nanofiller, and the content of the first and second epoxy group-containing acrylic resins is within the above-mentioned specific range. Therefore, by stretching the adhesive layer 3, the adhesive layer 3 can be cut with high precision along the cut portion 23c of the divided semiconductor wafer 23. This makes it less likely that the adhesive layer 3 will be broken under the semiconductor chip. Since the adhesive layer 3 can be cut with high precision, the pick-up property of the semiconductor chip with the adhesive layer 3 can be improved. Since the fragmentation of the adhesive layer 3 is less likely to occur, when the semiconductor chip with the adhesive layer is laminated on the bonding object member and bonded, the inclination of the semiconductor chip can be suppressed, and the bonding of the semiconductor chip can be improved. reliability. In addition, it is possible to suppress the occurrence of warpage in the bonded semiconductor chip, and it is possible to suppress the occurrence of cracks in the cured adhesive layer.

By using the dicing die-bonding tape 1 , the adhesive layer 3 can be diced with high precision without modifying the adhesive layer 3 when dicing the adhesive layer 3 . For example, the adhesive layer 3 can be cut with high precision without heating and cooling the adhesive layer 3 or irradiating the adhesive layer 3 with laser light for modifying the adhesive layer 3 . Before or during stretching of the adhesive layer 3, the adhesive layer 3 is preferably not modified. It is preferable not to heat and cool the adhesive layer 3 or to irradiate the adhesive layer 3 with laser light before stretching the adhesive layer 3 or during stretching of the adhesive layer 3 . Before or during the stretching of the adhesive layer 3, the adhesive layer 3 is preferably not subjected to heating for modifying the adhesive layer 3 (except heating for peeling the protective sheet 22). other than) and cooling or irradiating the laser. However, the adhesive layer 3 can be modified. Without modifying the adhesive layer 3, the manufacturing efficiency of the semiconductor chip with the adhesive layer 3 can be improved.

After the adhesive layer 3 is cut and the adhesive layer 3 is laminated, the semiconductor chip is peeled and taken out from the base material layer 4 together with the adhesive layer 3 . A semiconductor chip with adhesive layer 3 can thus be obtained. In the case of using the dicing and die-bonding tape 1, since the non-adhesive base material layer 4 is positioned under the portion of the adhesive layer 3 to which the semiconductor wafer 23 after division is attached, it is possible to improve the bonding with the adhesive layer. 3 Pickup of semiconductor chips. Even in the case of using the dicing and die-bonding tape 11, since the non-adhesive portion 12A of the base material layer 12 is located below the portion of the adhesive layer 3 to which the divided semiconductor wafer 23 is attached, the tape adhesion can be improved. The pick-up property of the semiconductor chip of the agent layer 3. After dicing the adhesive layer 3 and before peeling off the semiconductor chips with the adhesive layer 3 from the base material layer 4, the dicing layer 5 may be stretched to further increase the interval between the individual semiconductor chips.

It should be noted that, in the case of using an adhesive layer formed of the above-mentioned curable composition in the form of a monomer instead of the dicing and die-bonding tape 1 , the above-mentioned curable adhesive layer can be laminated on one side of the semiconductor wafer 23 after division. After the adhesive layer is formed from the composition, the base material layers 4 and 12 are laminated on the adhesive layer. Dicing layers 5 , 13 may be further laminated on base material layers 4 , 12 as needed.

Hereinafter, the present invention will be specifically described by giving examples and comparative examples. The present invention is not limited to the following examples.

In order to form a curable composition, the following materials were prepared.

(1) epoxy resin

Phenoxy-based solid epoxy resin ("1004F" manufactured by Mitsubishi Chemical (formerly Japan Epoxy Resin), epoxy group equivalent 925g/eq, molecular weight less than 10,000, having a hydroxyl group as a free polar group)

Dicyclopentadiene-based solid epoxy resin ("HP-7200HH" manufactured by DIC Corporation, epoxy group equivalent 282g/eq, molecular weight less than 10,000, no polar group)

Bisphenol A liquid epoxy resin ("EXA-850CRP" manufactured by DIC Corporation, epoxy group equivalent 172g/eq, molecular weight less than 10,000, no polar group)

(2) Curing agent for epoxy resin

Acid anhydride curing agent (“YH-309” manufactured by Mitsubishi Chemical (formerly Japan Epoxy Resin) Co., Ltd.)

(3) curing accelerator

Imidazole curing agent ("2MAOK-PW" manufactured by Shikoku Chemicals Co., Ltd.)

(4) The first epoxy group-containing acrylic resin

Epoxy-containing acrylic resin ("Mapurufu G-2050M" manufactured by NOF Corporation, epoxy equivalent: 340g/eq, weight average molecular weight: 200,000, glass transition temperature: 74°C)

Epoxy-containing acrylic resin ("Mapurufu G-1005SA" manufactured by NOF Corporation, epoxy equivalent: 3300g/eq, weight average molecular weight: 100,000, glass transition temperature: 98°C)

(5) Other epoxy-containing acrylic resins

Epoxy group-containing acrylic resin ("SG-80H" manufactured by Nagase Chemtex Co., Ltd., epoxy equivalent: 14700g/eq, weight average molecular weight: 350,000, glass transition temperature: 11°C)

(6) The second epoxy-containing acrylic resin

Epoxy-containing acrylic resin ("Mapurufu G-0250S" manufactured by NOF Corporation, epoxy equivalent: 310g/eq, weight average molecular weight: 20,000, glass transition temperature: 74°C)

Epoxy-containing acrylic resin ("Mapurufu G-0150M" manufactured by NOF Corporation, epoxy equivalent: 310g/eq, weight average molecular weight: 10,000, glass transition temperature: 71°C)

(7) Nano filler

Anhydrous ultrafine amorphous silica ("MT-10" manufactured by Tokuyama Co., Ltd., average primary particle size 15nm)

Anhydrous ultrafine amorphous silica ("DM-10" manufactured by Tokuyama Co., Ltd., average primary particle size 15nm)

SO-C2 (ADMAFINE silica manufactured by Admatechs, average primary particle diameter less than 1000nm, average particle diameter 0.5μm)

SO-C6 (Admafine silica manufactured by Admatechs, average particle diameter: 2.2 μm)

In addition, the average primary particle diameter of MT-10, DM-10, and SO-C2 was calculated by observing with a transmission electron microscope, and obtaining the average value of the measured particle diameter. In addition, the average particle diameter of SO-C2 and SO-C6 represents the median diameter measured by the laser diffraction particle size distribution meter.

(8) Other ingredients

Aminoorganosilane coupling agent (manufactured by CHISSO "S320")

(Example 1)

As an epoxy resin, 45 parts by weight of phenoxy epoxy resin ("1004F" manufactured by Mitsubishi Chemical (formerly Japan Epoxy Resin) Co., Ltd.) and 20 parts by weight of bisphenol A liquid epoxy resin ("EXA-850CRP" manufactured by DIC Corporation) were mixed. Parts by weight, 35 parts by weight of an acid anhydride curing agent (manufactured by Mitsubishi Chemical (formerly Japan Epoxy Resin) company "YH-309") as a curing agent for epoxy resin, an imidazole curing accelerator as a curing accelerator for epoxy resin ("2MAOK-PW" manufactured by Shikoku Chemical Co., Ltd.) 5 parts by weight, Mapurufu G-2050M (manufactured by NOF Corporation) as the first epoxy group-containing acrylic resin 15 parts by weight, Mapurufu as the second epoxy group-containing acrylic resin 20 parts by weight of G-0150M (manufactured by NOF Corporation), 10 parts by weight of anhydrous ultrafine amorphous silica (manufactured by Tokuyama Corporation "MT-10") as a nanofiller, aminoorganosilane coupling agent (manufactured by CHISSO Corporation) "S320") 1 part by weight to obtain a mixture. The obtained mixture was added to methyl ethyl ketone (MEK) so that the solid content would be 50% by weight, and stirred to obtain a curable composition as a binder.

(Examples 2~4 and Comparative Examples 1~3)

A curable composition as an adhesive was obtained in the same manner as in Example 1, except that the types and mixing amounts of the materials used to obtain the mixture were changed as shown in Table 1 below.

(evaluate)

(1) Evaluation of breaking stress, breaking elongation and minimum melt viscosity

On the release-treated surface of a polyethylene terephthalate (PET) sheet with a thickness of 50 μm that has been subjected to release treatment, the curable compositions of Examples and Comparative Examples were applied using a bar coater and made The thickness after drying was 10 μm. Then, it was dried at 100° C. for 3 minutes, and the curable composition was shaped into a sheet to obtain a sheet. The sheets were stacked by thermal lamination, and a test piece for measuring breaking stress and breaking elongation (length 50 mm×width 10 mm×thickness 0.1 mm) and a test piece for measuring melt viscosity (diameter 20 mm×thickness 0.5 mm) were prepared.

Using a tensile tester (manufactured by Orientec "Tensilon RTC-1310"), the breaking stress and breaking elongation of the obtained test piece were measured under the conditions of 23° C., 25 mm between the marked lines, and a tensile speed of 300 mm/min. .

Using a rheometer (manufactured by Reologica Instruments AB "VAR100"), under the conditions of a parallel plate with a diameter of 20 mm, a frequency of 1 Hz, a shift of 0.1%, 40°C to 200°C, and a heating rate of 5°C/min, the rheology of the test piece was measured. viscosity. Read the lowest value of the melt viscosity in the range of 40°C~200°C as the minimum melt viscosity.

(2) Evaluation of storage modulus

On the release-treated surface of a polyethylene terephthalate (PET) sheet with a thickness of 50 μm and a release-treated surface, the curable compositions of Examples and Comparative Examples were applied with a bar coater and dried. The final thickness is 10 μm. Then, it was dried at 100° C. for 3 minutes, and the curable composition was shaped into a sheet to obtain a sheet. This sheet was laminated by thermal lamination to produce a test piece (length: 50 mm×width: 3 mm×thickness: 0.5 mm). This test piece was cured by heating at 170° C. for 60 minutes to obtain a cured product. Using a dynamic viscoelasticity device (“DVA-200” manufactured by IT (アイテイ) Measurement and Control Co., Ltd.), the elongation at 180°C of the obtained cured product was measured at 25 to 300°C, 5°C/min, and 10Hz. Storage modulus E'.

(3) Fabrication of dicing and die bonding tape

Dicing and die-bonding ribbons of the shape shown in Fig. 1 were fabricated.

95 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of 2-hydroxyethyl acrylate, 0.2 parts by weight of Irgacure 651 (manufactured by Ciba-geigy, 50% ethyl acetate solution) as a photoradical generator, and 0.01 part by weight of lauryl mercaptan was dissolved in ethyl acetate to obtain a solution. The solution was irradiated with ultraviolet rays to perform polymerization, and an ethyl acetate solution of the polymer was obtained. In addition, 100 parts by weight of the solid content of this solution was reacted with 3.5 parts by weight of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko, Karenz MOI) to obtain acrylic acid as a (meth)acrylic resin crosslinked product. copolymer. The weight-average molecular weight of the acrylic copolymer was 700,000, and the acid value was 0.86 (mgKOH/g).

100 parts by weight of the obtained acrylic copolymer, 2 parts by weight of U-324A (manufactured by Shin-Nakamura Chemical Industry Co., Ltd., urethane acrylic oligomer), and Irgacure 651 (manufactured by Ciba-geigy Co., Ltd.) as a photoradical generator 1 part by weight was dissolved in ethyl acetate to obtain a composition. This composition was applied on a release PET film using an applicator, and heated and dried at 110° C. for 3 minutes to form a film-like composition layer with a thickness of 50 μm. A mold release PET film was stuck on this composition layer. Then, the above-mentioned composition layer was irradiated with 365nm ultraviolet rays under a high-pressure mercury lamp under the condition of 2000mJ/cm ² to form a non-adhesive base material layer (thickness 50 μm) on the release PET film.

In addition, the curable compositions obtained in Examples and Comparative Examples were coated on PET38CS manufactured by Lintec Co., Ltd. to a thickness of 40 μm with an applicator, and heated and dried at 110° C. for 3 minutes to obtain an adhesive layer (thickness 40 μm). .

One of the release PET films attached to both surfaces of the base material layer was peeled off to obtain a circular base material layer with a diameter of 306.8 mm. The adhesive layer on the above-mentioned PET38CS was processed into a circle with a diameter of 305.8 mm. Fit the layers of base material and adhesive so that the centers of the circles coincide. Peel off the release PET film attached to one side of the base material layer, and cut the dicing layer (PE tape #6318-B (adhesive film manufactured by Sekisui Chemical Co., Ltd., polyethylene substrate with a thickness of 70 μm) from the adhesive layer side. On one side of the material, an adhesive film ()) of a rubber-based adhesive layer with a thickness of 10 μm was attached to the base material layer. In addition, the region of the dicing layer that protruded further outside the outer peripheral side surfaces of the adhesive layer and the base material layer was attached to the above-mentioned PET38CS. Thus, a dicing and die-bonding tape in which a release layer, an adhesive layer, a base material layer, and a dicing layer were laminated in this order was obtained.

(4) Evaluation of splitting property, pick-up property and adhesive property

A laminate of a protective sheet and a semiconductor wafer (silicon wafer, 300 mm in diameter, 40 μm in thickness) previously diced into a chip size of 10 mm square was used as a material having a previously diced divided semiconductor wafer.

The release PET film of the dicing and die-bonding tape obtained in the above (3) Production of dicing and die-bonding tape was peeled off from the adhesive layer and base material layer, and the outer peripheral parts of the adhesive layer and base material layer were exposed. At a temperature of 60° C., an adhesive layer was laminated on the rear surface of the semiconductor wafer after separation of the laminate, and the adhesive layer of the dicing layer was attached to a dicing wheel.

Then, the divided semiconductor wafer to which the adhesive layer was attached was taken out from the stage, turned over, and loaded on another stage. Then, the protective sheet was peeled off from the surface of the divided semiconductor wafer at 60°C. At this time, the adhesive layer was not modified.

Next, using a peeler ("bestem D-02" manufactured by Canon Machinery Co., Ltd.), stretch the adhesive layer, base material layer, and dicing layer at 23°C and an elongation of 5mm, and stretch along the diced semiconductor wafer. The cutting portion cuts the adhesive layer, and separates the semiconductor chips one by one in the rear semiconductor wafer.

Then, under the conditions of rubber opening clip (collet) size 9mm square, pin jacking amount 0.3mm and pin jacking speed 4mm/sec, after 20 semiconductor chips with adhesive layer are picked up continuously, with 100 °C and 5N conditions were bonded to a glass plate with a thickness of 1 mm.

The splittability (cut state) of the adhesive layer was judged by observing the adhesive layer of the bonded chip from the back side of the glass plate with an optical microscope (200 times magnification), and judged according to the following judgment criteria.

[Criterion of Fragmentation]

○○: There is no defect in the adhesive layer under the semiconductor chip

○: Under the semiconductor chip, the adhesive layer has a small defect (the maximum length of the defect is less than 50 μm)

×: Under the semiconductor chip, the adhesive layer is slightly chipped (the maximum length of the chip is 50 μm or more and less than 100 μm)

××: Under the semiconductor chip, there is a defect in the adhesive layer (the maximum length of the defect is 100 μm or more)

×××: Cannot be split

In addition, the pick-up property was judged according to the following judgment criteria.

[Criteria for Pickup]

○: There is no semiconductor chip with an adhesive layer that cannot be picked up

×: There is a semiconductor chip with an adhesive layer that cannot be picked up

Then, under the conditions of 100°C and 5N, 27 semiconductor chips with an adhesive layer picked up by the above method were bonded from the adhesive layer side to a glass epoxy substrate (manufactured by Dachang Electronics Co., Ltd. "TPWB-S02 ")superior. Then, this was placed in an oven at 170° C. for 60 minutes to cure the adhesive layer to form a cured product layer, thereby obtaining a bonded structure.

Place the obtained bonded structure in a constant temperature and humidity chamber at 30°C and 70% for 168 hours, and then use a reflow oven (manufactured by Antom "UNI-5016F") under the conditions of preheating at 160°C and a maximum of 255°C , The reflow resistance test of the connected structure was carried out. Then, the presence or absence of peeling of the adhesive layer of the bonded structure was observed using an ultrasonic flaw detector SAT ("mi-scope" manufactured by Hitachi Construction Machinery Finetek Co., Ltd.), and the number of objects in which peeling was observed was counted. The adhesiveness of the obtained bonded structure was judged according to the following judgment criteria. Regarding the peeling observed here, the peeling caused by the upward warping of the semiconductor chip floats on the outer peripheral part of the semiconductor chip, so by optical observation, on the other hand, the peeling caused by the reflow heat is due to the adhesion of the cured material layer. Occurrence at the interface is thus observed by the portrait obtained by the above-mentioned SAT.

[Criteria for Adhesiveness]

○: No warping of the semiconductor chip and no cracks in the cured material layer, and there is no semiconductor chip with the adhesive layer (cured material layer) that has been peeled off

×: There is warping of the semiconductor chip or cracks in the cured material layer, and there is a semiconductor chip with an adhesive layer (cured material layer) that has been peeled off

The results are shown in Table 1 below. In addition, "-" in following Table 1 shows that evaluation was not performed.

Claims (15)

1. A curable composition comprising: epoxy resin, curing agent for epoxy resin, The first epoxy group-containing acrylic resin having a weight average molecular weight of 100,000 to 400,000 and a glass transition temperature of 60°C or higher, The second epoxy group-containing acrylic resin having a weight average molecular weight of 10,000 to 20,000 and a glass transition temperature of 60°C or higher, and nanofillers, Among the epoxy resin, the first epoxy group-containing acrylic resin and the second epoxy group-containing acrylic resin in a total of 100% by weight, the content of the first epoxy group-containing acrylic resin is 10~ 40% by weight, and the content of the second epoxy-containing acrylic resin is 1-35% by weight. 2. The curable composition according to claim 1, wherein, when the curable composition is shaped into a sheet to obtain a sheet, The stress at break of the sheet before curing at 23° C. is 6 MPa or less, and the elongation at break of the sheet before curing at 23° C. is 200% or less. 3. The curable composition according to claim 1, wherein, when the curable composition is shaped into a sheet to obtain a sheet, When the uncured sheet is heated from 40°C to 200°C at a heating rate of 5°C/min, the minimum melt viscosity at 40°C to 200°C is 1000 Pa·s or more. 4. The curable composition according to claim 1, wherein the storage modulus at 180° C. of the cured product after curing is 40 MPa or more. 5. The curable composition according to claim 1, wherein the epoxy resin comprises an epoxy resin having a polar group. 6. The curable composition according to claim 1, which is formed into a sheet shape. 7. The curable composition according to claim 1, which is an adhesive for bonding a semiconductor chip to a member to be bonded. 8. The curable composition according to any one of claims 1 to 7, wherein the nanofiller has an average particle diameter of not less than 1 nm and less than 1000 nm. 9. The curable composition according to any one of claims 1 to 7, wherein the nanofiller has an average particle diameter of not less than 5 nm and less than 300 nm. 10. A dicing and die-bonding tape comprising: An adhesive layer formed from the curable composition according to any one of claims 1 to 9, and A base material layer laminated on one side of the adhesive layer. 11. A connection structure comprising: semiconductor chips, glue object components, and the cured material layer arranged between the semiconductor chip and the bonding target member, The cured product layer is formed by curing the curable composition according to any one of claims 1 to 9. 12. A method of manufacturing a semiconductor chip with an adhesive layer comprising the steps of: Using the adhesive layer formed from the curable composition according to any one of claims 1 to 9 and a divided semiconductor wafer of individual semiconductor chips, laminating on one side of the divided semiconductor wafer the step of the adhesive layer, a step of cutting the adhesive layer along cut portions of the divided semiconductor wafers by stretching the adhesive layer, and separating the semiconductor chips one by one of the divided semiconductor wafers, and A step of taking out the semiconductor chip with the adhesive layer in the state where the adhesive layer is laminated. 13. The method of manufacturing a semiconductor chip with an adhesive layer according to claim 12, wherein a dicing and die-bonding tape having the adhesive layer, and a lamination layer is used A layer of matrix material on one side of the adhesive layer. 14. The method of manufacturing a semiconductor chip with an adhesive layer according to claim 12 or 13, wherein, before stretching the adhesive layer or during stretching of the adhesive layer, the The adhesive layer is modified. 15. The method for manufacturing a semiconductor chip with an adhesive layer according to claim 12 or 13, wherein, before stretching the adhesive layer or during stretching of the adhesive layer, the The pressure-sensitive adhesive layer is subjected to heating and cooling for modifying the pressure-sensitive adhesive layer, or irradiated with laser light.