CN102819626A - Method for locating intermediate region of through-silicon via (TSV) in three-dimensional (3D) integrated circuit automatic layout - Google Patents
Method for locating intermediate region of through-silicon via (TSV) in three-dimensional (3D) integrated circuit automatic layout Download PDFInfo
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Abstract
本发明提供了一种3D集成电路自动布局中TSV的中间区域定位方法,属于电路设计领域。在本发明的方法中首先分别以版图的上下两层芯片边缘建立水平直角坐标系,然后分别确定出水平方向上两层芯片需要互联的单元所组成的范围矩形,最后对跨层线网上下两层的范围矩形进行横纵坐标区间的与运算,计算中间区域;中间区域即为确定的TSV的布局范围。在本发明所定位的跨层线网中间区域中插入的TSV,可使跨层线网的线网长度得到优化,从而提高电路的速度。
The invention provides a method for locating the middle area of a TSV in the automatic layout of a 3D integrated circuit, which belongs to the field of circuit design. In the method of the present invention, the horizontal Cartesian coordinate system is first established with the upper and lower chip edges of the layout respectively, and then the range rectangle formed by the units that need to be interconnected between the two layers of chips in the horizontal direction is determined respectively, and finally the upper and lower layers of the cross-layer line network The range rectangle of the layer performs the AND operation of the horizontal and vertical coordinate intervals to calculate the middle area; the middle area is the determined layout range of the TSV. The TSV inserted in the middle area of the cross-layer net positioned in the present invention can optimize the net length of the cross-layer net, thereby increasing the speed of the circuit.
Description
发明领域 field of invention
本发明总体上涉及3D集成电路的设计及制造,更具体地,本发明涉及用于三维集成电路设计中的自动布局的方法,属于电路设计领域。The present invention generally relates to the design and manufacture of 3D integrated circuits, and more specifically, the present invention relates to a method for automatic layout in 3D integrated circuit design, which belongs to the field of circuit design.
背景技术 Background technique
集成电路的设计和制造水平一直在飞速的发展,如今已经可在单个芯片上集成数亿个晶体管。更具体的,根据摩尔定律的描述,先进的工艺水平已经达到纳米级。由于单个芯片上晶体管数量的增加,普通的2D集成电路会带来线路过长的问题,这使电路的运算速度降低,功耗增加。3D集成电路可以有效的减少线路长度,提高运算速度,降低功耗。The design and manufacturing level of integrated circuits has been developing rapidly, and now hundreds of millions of transistors can be integrated on a single chip. More specifically, according to the description of Moore's Law, the advanced technology level has reached the nanometer level. Due to the increase in the number of transistors on a single chip, ordinary 2D integrated circuits will cause the problem of excessively long lines, which will reduce the operation speed of the circuit and increase power consumption. 3D integrated circuits can effectively reduce line length, improve computing speed, and reduce power consumption.
3D集成电路是一种新兴技术,通过在垂直方向上放置多个IC芯片来减少芯片的面积。同时多层芯片之间可以通过TSV(跨芯片层硅孔)使其单元进行层间的互联。只要TSV的位置放置的合理,这种基于TSV的3D集成电路技术可以有效的减少线网长度。3D integrated circuits are an emerging technology that reduces the area of a chip by placing multiple IC chips in a vertical direction. At the same time, the units of multi-layer chips can be interconnected through TSV (silicon vias across chip layers). As long as the position of the TSV is placed reasonably, this TSV-based 3D integrated circuit technology can effectively reduce the length of the line network.
如图1所示为3D芯片示意图,3D集成电路是由顶层芯片1和底层芯片2堆叠而成的三维立体电路结构。电路中的标准单元4是电路的基本结构。某一层的3D电路芯片,其性质与普通2D芯片类似。标准单元4通过金属互联线6进行互联。2D电路中,所有通过金属互联线连接在一起的单元的集合统称为线网。3D集成电路中,所有单元都处在同一层的线网(类似2D电路的线网)即为单层线网。各个单元也是通过金属线互联。而3D电路中,有些分别处于不同层的单元也需要互联。由处于不同层的单元组成的线网叫做跨层线网,由标准单元4所组成的线网即为跨层线网。而处于不同层的单元需要互联时,可以利用TSV5(硅通孔)进行互联。FIG. 1 is a schematic diagram of a 3D chip. A 3D integrated circuit is a three-dimensional circuit structure formed by stacking a
3D集成电路的上层与下层2D芯片的单元通过TSV进行互联,即TSV为连接跨层线网处于上层和下层单元的桥梁。TSV处于上层单元集合和下层单元集合的位置是互联效果的关键,优秀的TSV位置可以使互联得到大幅度的优化。故寻找TSV的理想位置成为了TSV定位的关键之一。The upper and lower 2D chip units of the 3D integrated circuit are interconnected through TSV, that is, the TSV is a bridge connecting the upper and lower units of the cross-layer wire network. The position of the TSV in the upper unit set and the lower unit set is the key to the interconnection effect, and an excellent TSV position can greatly optimize the interconnection. Therefore, finding the ideal location of TSV has become one of the keys to TSV positioning.
遗憾的是,现如今没有一种关于TSV定位的3D集成电路自动设计方法,因此,希望能够提供一种3D集成电路的自动设计方法。Unfortunately, there is currently no automatic design method for 3D integrated circuits regarding TSV positioning. Therefore, it is hoped that an automatic design method for 3D integrated circuits can be provided.
发明内容Contents of the invention
为了解决对3D集成电路中跨芯片层硅孔(TSV)位置的确定问题,本发明提出了一种3D集成电路自动布局中TSV的中间区域定位法。In order to solve the problem of determining the position of a cross-chip layer silicon via (TSV) in a 3D integrated circuit, the present invention proposes a method for locating the middle area of the TSV in the automatic layout of a 3D integrated circuit.
本发明的方法中TSV的定位范围由位置由跨层线网的位置关系来确定,步骤如下:In the method of the present invention, the positioning range of TSV is determined by the positional relationship of the cross-layer line network, and the steps are as follows:
A、分别以版图的上下两层芯片边缘建立水平直角坐标系;A. Establish a horizontal Cartesian coordinate system with the upper and lower chip edges of the layout respectively;
B、分别确定出水平方向上两层芯片需要互联的单元所组成的范围矩形;B. Determine the range rectangle formed by the units that need to be interconnected in the two layers of chips in the horizontal direction;
C、对跨层线网上下两层的范围矩形进行横纵坐标区间的与运算,计算中间区域;中间区域即为确定的TSV的布局范围。C. Perform an AND operation on the range rectangles of the upper and lower layers on the cross-layer network to calculate the middle area; the middle area is the determined layout range of the TSV.
所述的确定范围矩形的方法为:将所有单元在水平直角坐标系以坐标定位,计算出每一个线网中所有单元在横纵坐标方向上的最大和最小值,以这四个边缘值确定线网的范围矩形。The method for determining the range rectangle is as follows: locate all units in the horizontal rectangular coordinate system with coordinates, calculate the maximum and minimum values of all units in each line network in the direction of horizontal and vertical coordinates, and determine with these four edge values The extent rectangle of the net.
当所述的对于范围矩形的横坐标进行区间的与运算计算的结果不是空集时即确定上述横坐标的与运算结果为上述中间区域的横坐标区间;当所述的对于范围矩形的横坐标进行区间的与运算计算的结果为空集时,将恰好将两区间连起来的横坐标闭区间作为横坐标区间。When the result of the AND calculation of the interval for the abscissa of the range rectangle is not an empty set, it is determined that the AND operation result of the above-mentioned abscissa is the abscissa interval of the above-mentioned middle area; when the abscissa of the range rectangle is When the AND calculation result of the interval is an empty set, the closed interval on the abscissa that just connects the two intervals is taken as the interval on the abscissa.
当所述的对于范围矩形的纵坐标进行区间的与运算计算的结果不是空集时即确定上述纵坐标的与运算结果为上述中间区域的横坐标区间;当所述的对于范围矩形的纵坐标进行区间的与运算计算的结果为空集时,将恰好将两区间连起来的纵坐标闭区间作为纵坐标区间。When the result of the AND operation calculation of the interval for the ordinate of the range rectangle is not an empty set, it is determined that the AND operation result of the above-mentioned ordinate is the abscissa interval of the above-mentioned middle area; when the ordinate of the range rectangle is When the AND calculation result of the interval is an empty set, the closed interval of the ordinate that just connects the two intervals is taken as the interval of the ordinate.
上述横坐标区间和纵坐标区间所围成的矩形区域即是安装TSV的中间区域,可以在中间区域中的任意一点安装TSV。The rectangular area enclosed by the above abscissa interval and ordinate interval is the middle area where TSV is installed, and TSV can be installed at any point in the middle area.
本发明可以获得如下有益效果:The present invention can obtain following beneficial effect:
3D集成电路任意相邻的两层芯片中,在本发明中的跨层标准单元互联所形成的跨层线网,在其中间区域中插入的TSV,可使跨层线网的线网长度得到优化,从而提高电路的速度。In any adjacent two-layer chip of a 3D integrated circuit, in the cross-layer wire network formed by the interconnection of cross-layer standard units in the present invention, the TSV inserted in the middle area can make the wire network length of the cross-layer wire network obtain optimized to increase the speed of the circuit.
附图说明 Description of drawings
图13D集成电路芯片剖面示意图;Figure 13D is a schematic cross-sectional view of an integrated circuit chip;
图2第一种位置关系的两个线网;Two wire nets of the first positional relationship in Fig. 2;
图3第二种位置关系的两个线网;Two wire nets of the second positional relationship of Fig. 3;
图4第三种位置关系的两个线网;Two line nets of the third positional relationship in Fig. 4;
图5第四种位置关系的两个线网;Two wire nets of the fourth positional relationship in Fig. 5;
图6跨层线网在上下层芯片的线网区域示意图;Figure 6 is a schematic diagram of the cross-layer wire mesh in the wire mesh area of the upper and lower chips;
图7区域运算示意图。Figure 7 Schematic diagram of regional operations.
图中:1、顶层芯片,2、底层芯片,3、衬底,4、顶层芯片标准单元,5、底层芯片标准单元,6、TSV,7、金属互联线,8、顶层线网范围区域,9、底层线网范围区域,10、中间区域,11、顶层线网左下角坐标,12、顶层线网右上角坐标,13、底层线网左下角坐标,14、底层线网右上角坐标,15、额外横向线网长度,16、额外纵向线网长度,17、底层新网在Y轴上的投影,18、顶层线网在Y轴上的投影,19、底层线网在X轴上的投影,20、顶层线网在X轴上的投影,21、重叠区域,22、分离区域。In the figure: 1. Top-layer chip, 2. Bottom-layer chip, 3. Substrate, 4. Standard cell of top-layer chip, 5. Standard cell of bottom-layer chip, 6. TSV, 7. Metal interconnection line, 8. Top-layer wire mesh area, 9. The range area of the bottom net, 10, the middle area, 11, the coordinates of the lower left corner of the top net, 12, the coordinates of the upper right corner of the top net, 13, the coordinates of the lower left corner of the bottom net, 14, the coordinates of the upper right corner of the bottom net, 15 , additional horizontal wire mesh length, 16, additional vertical wire mesh length, 17, the projection of the bottom new mesh on the Y axis, 18, the projection of the top layer mesh on the Y axis, 19, the projection of the bottom layer mesh on the X axis , 20, the projection of the top-level wire mesh on the X-axis, 21, the overlapping area, 22, the separation area.
具体实施方式 Detailed ways
下面结合附图和具体实施方式对于本发明中3D集成电路自动布局中TSV的中间区域定位法作进一步的说明。The method for locating the middle area of TSVs in the automatic layout of 3D integrated circuits in the present invention will be further described below with reference to the accompanying drawings and specific embodiments.
A、本发明中,称上下相邻的两层3D集成电路芯片为顶层芯片和底层芯片。A. In the present invention, two adjacent layers of 3D integrated circuit chips are referred to as the top chip and the bottom chip.
在顶层和底层芯片上建立直角坐标系,以芯片的两个边缘作为坐标轴,如图6所示,以左边缘作为纵轴,以下边缘作为横轴,以左下角的边缘交点作为坐标原点。根据确定的平面直角坐标系,将顶层和底层的每个标准单元以这两个坐标系确定坐标,作为描述所有单元位置的依据。确定TSV中间区域要以需要跨层互联的单元分别处于上下两层芯片的部分单元所围成的范围区域为基础。Establish a Cartesian coordinate system on the top and bottom chips, take the two edges of the chip as the coordinate axes, as shown in Figure 6, take the left edge as the vertical axis, the lower edge as the horizontal axis, and take the edge intersection point in the lower left corner as the coordinate origin. According to the determined planar Cartesian coordinate system, the coordinates of each standard unit on the top and bottom floors are determined in these two coordinate systems as the basis for describing the positions of all units. Determining the middle area of the TSV is based on the area surrounded by some units of the upper and lower layers of chips where the units that need cross-layer interconnection are respectively located.
B、需要跨层互联的单元分别处于集成电路的两层芯片上。图6中,实心三角所示的顶层芯片标准单元4即为图1中的顶层芯片标准单元4的结构,对他们以顶层的坐标轴为依据,确定其坐标。图6中,实心方块所示的底层芯片标准单元5即为图1中的底层芯片标准单元5的结构,对它们以底层的坐标轴为依据,确定其坐标。顶层芯片标准单元4和底层芯片标准单元5是处于3D电路中上下两层芯片的标准单元,是电路的基本结构。B. The units that need cross-layer interconnection are located on the two-layer chips of the integrated circuit. In FIG. 6 , the top-level chip
在确定顶层单元的范围区域时,以顶层的单元为基础,比较单元的横坐标,纵坐标,比出所有单元中,横纵坐标的最大和最小值,以这四个边缘值所确定的矩形即为顶层和底层线网的范围区域。如图顶层线网范围区域8,底层线网范围区域9。When determining the range area of the top-level unit, based on the top-level unit, compare the abscissa and ordinate of the unit, compare the maximum and minimum values of the abscissa and ordinate among all units, and determine the rectangle determined by these four edge values That is, the extent area of the top-level and bottom-level nets. As shown in the figure, the top layer wire
C、计算得出跨层线网的两层芯片上的范围矩形后,将上下两层芯片的坐标轴重合。使两层芯片上的跨层线网区域放置在同一个坐标系中。如图7所示,顶层线网范围区域8和底层线网范围区域9。C. After calculating the range rectangle on the two-layer chip of the cross-layer line network, the coordinate axes of the upper and lower two-layer chips are coincident. Make the cross-layer wire mesh area on the two-layer chip be placed in the same coordinate system. As shown in FIG. 7 , the top
两层芯片放置在同一个坐标系后,再将他们分别投影(计算出两个范围区域的横纵坐标的范围区间,在坐标轴上表示出来即为投影操作)到横纵坐标轴上。投影区域为底层线网在Y轴上的投影17、顶层线网在Y轴上的投18、底层线网在X轴上的投影19、顶层线网在X轴上的投影20四个部分,形成重叠区域21和分离区域22。After the two layers of chips are placed in the same coordinate system, they are respectively projected (calculate the range intervals of the horizontal and vertical coordinates of the two range areas, and expressing them on the coordinate axes is the projection operation) onto the horizontal and vertical coordinate axes. The projection area is the
分别在横纵坐标轴上对四个投影所构成的区间做与运算,若结果不是空集,则将其确定为中间区域在该坐标方向的坐标范围,称之为重合区间;若结果是空集,则将恰好能连接两个区间(即这两个无交集区间的间隔)的闭区间作为中间区域在该坐标方向上的范围区间,称之为分离区间。同时得到两个坐标方向上的中间区域范围,从而确定出中间区域11的矩形范围。确定出中间区域的范围后,在中间区域内随机生成一点坐标,即为TSV的坐标。Perform an AND operation on the interval formed by the four projections on the horizontal and vertical axes, if the result is not an empty set, it will be determined as the coordinate range of the middle area in the coordinate direction, which is called the overlapping interval; if the result is empty Set, then the closed interval that can just connect two intervals (that is, the interval between these two non-intersecting intervals) is taken as the range interval of the intermediate area in the coordinate direction, which is called the separation interval. At the same time, the range of the middle area in the two coordinate directions is obtained, so as to determine the rectangular range of the
下面对得出的中间区域作如下分析:The resulting intermediate region is analyzed as follows:
不同位置关系的跨层线网在两坐标轴上得到的投影区间不同,其类型为横纵坐标轴上重合区间与分离区间的排列组合。在图1-4中示意四种位置关系,用本发明的方法可适用于所有位置关系的跨层线网。The cross-layer line networks with different positional relationships have different projection intervals on the two coordinate axes, and their types are the arrangement and combination of overlapped intervals and separated intervals on the horizontal and vertical axes. Four positional relationships are illustrated in Figures 1-4, and the method of the present invention can be applied to cross-layer nets of all positional relationships.
第一种位置关系:The first position relationship:
以两重合区间所组成的矩形作为中间区域,得出中间区域为(x3,y3)到(x2,y2)的区域。如图2。Taking the rectangle formed by the two overlapping intervals as the middle area, the middle area is obtained as the area from (x3, y3) to (x2, y2). Figure 2.
第二种位置关系:The second positional relationship:
以纵轴上的重合区间和横轴上的分离区间所组成的矩形作为中间区域,得出中间区域为(x2,y3)到(x3,y2)的区域。如图3。Taking the rectangle formed by the coincident interval on the vertical axis and the separation interval on the horizontal axis as the intermediate area, the intermediate area is obtained as the area from (x2, y3) to (x3, y2). Figure 3.
第三种位置关系:The third position relationship:
以纵轴上的分离区间和横轴上的重合区间所组成的矩形作为中间区域,得出中间区域为(x3,y2)到(x2,y3)的区域。如图4。Taking the rectangle formed by the separated interval on the vertical axis and the overlapped interval on the horizontal axis as the intermediate area, the intermediate area is obtained as the area from (x3, y2) to (x2, y3). Figure 4.
第四种位置关系:The fourth position relationship:
以纵轴上的分离区间和横轴上的分离区间所组成的矩形作为中间区域,得出中间区域为(x2,y2)到(x3,y3)的区域。如图5。Taking the rectangle formed by the separation interval on the vertical axis and the separation interval on the horizontal axis as the middle area, the middle area is the area from (x2, y2) to (x3, y3). Figure 5.
在最优区域内,随即生成一点,作为TSV的坐标。In the optimal area, a point is generated randomly as the coordinates of TSV.
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| CN109582991A (en) * | 2017-09-28 | 2019-04-05 | 台湾积体电路制造股份有限公司 | Circuit layout coloring method |
| US12159092B2 (en) | 2017-09-28 | 2024-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for coloring circuit layout and system for performing the same |
| CN112597734A (en) * | 2020-12-31 | 2021-04-02 | 杭州广立微电子股份有限公司 | Method for calculating number of through holes and resistance value of cross-layer chain type connection structure |
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