CN102814084A - Gas filtering apparatus used in polysilicon production technology - Google Patents
Gas filtering apparatus used in polysilicon production technology Download PDFInfo
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- CN102814084A CN102814084A CN2012102854106A CN201210285410A CN102814084A CN 102814084 A CN102814084 A CN 102814084A CN 2012102854106 A CN2012102854106 A CN 2012102854106A CN 201210285410 A CN201210285410 A CN 201210285410A CN 102814084 A CN102814084 A CN 102814084A
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- 238000001914 filtration Methods 0.000 title claims abstract description 59
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 41
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 41
- 238000005516 engineering process Methods 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 239000000919 ceramic Substances 0.000 claims abstract description 36
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- 210000004907 gland Anatomy 0.000 claims description 6
- 239000002699 waste material Substances 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000000465 moulding Methods 0.000 abstract description 3
- 238000007599 discharging Methods 0.000 abstract 3
- 238000007789 sealing Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 54
- 238000006722 reduction reaction Methods 0.000 description 30
- 230000009467 reduction Effects 0.000 description 27
- 239000005046 Chlorosilane Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 23
- 239000001257 hydrogen Substances 0.000 description 22
- 229910052739 hydrogen Inorganic materials 0.000 description 22
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 20
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 20
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 19
- 238000011084 recovery Methods 0.000 description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 17
- 239000003463 adsorbent Substances 0.000 description 16
- 238000005406 washing Methods 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 8
- 238000001035 drying Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000004744 fabric Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000008929 regeneration Effects 0.000 description 7
- 238000011069 regeneration method Methods 0.000 description 7
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 7
- 239000005052 trichlorosilane Substances 0.000 description 7
- 230000005587 bubbling Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012797 qualification Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Abstract
The invention discloses a gas filtering apparatus used in a polysilicon production technology. The gas filtering apparatus comprises an upper sealing head, a straight cylinder part, and a lower sealing head which are sequentially connected from top to bottom. A gas outlet used for discharging filtered gas is provided on the upper part of the filtering apparatus, and a residue discharging outlet used for discharging residues is provided on the lower part of the filtering apparatus. A gas inlet used for introducing gas requiring filtering into the straight cylinder part is provided on the lower part of the straight cylinder part. A filtering part is arranged above the gas inlet. The filtering part comprises a faceplate provided with a through hole and a ceramic filtering core arranged in the through hole. According to the gas filtering apparatus provided by the invention, the gas filtering apparatus with the ceramic filtering core is adopted. The filtering apparatus has excellent properties of high-temperature resistance and corrosion resistance, such that no influence is caused on polysilicon product quality. According to the requirements of filtering precisions, ceramic filtering cores with different precisions can be produced. The ceramic filtering cores are advantaged in simple molding and low cost.
Description
Technical field
The present invention relates to production of polysilicon technology field, more specifically, the present invention relates to a kind of gas-filtering device that is used for production of polysilicon technology.
Background technology
China's present stage polysilicon project technology all belongs to the siemens process technology more than 85%, in this technical process, have numerous systems need carry out gas filtration.Specifically have: hydrogenation of silicon tetrachloride is produced trichlorosilane system, trichlorosilane synthesis system, reduction tail gas dry process recovery system etc.
The general at present filter that adopts is cloth envelop collector, and in process of production, finds that there is following several shortcoming in cloth envelop collector:
1, the cloth envelop collector resistance to elevated temperatures is poor.Especially produce in the trichlorosilane system in trichlorosilane synthesis system and hydrogenation of silicon tetrachloride, find that cloth envelop collector is very easy to breakage occur, cause filter effect seriously to descend, finally cause follow-up system to stop up;
2, cloth envelop collector is damaged easily, rolls up with regard to causing the Dust Capacity in the gas, finally causes product quality to occur declining to a great extent;
3, cloth envelop collector costs an arm and a leg, and the filter material of import is at present converted on the finished product filter bag, and every square metre of price reaches more than 1000 yuan;
4, the filter material poor corrosion resistance of cloth envelop collector, support member corrosion easily in maintenance process simultaneously cause the maintenance difficulty, and the cost of overhaul is high.
Summary of the invention
The present invention one of is intended to solve the problems of the technologies described above at least to a certain extent or provides a kind of useful commerce to select at least.
For this reason, one object of the present invention is to propose the gas-filtering device that a kind of strainability is good, cost is low, maintenance is used for production of polysilicon technology easily.
The gas-filtering device that is used for production of polysilicon technology according to the embodiment of the invention; Comprise the upper cover, vertical tube part and the low head that connect successively from top to bottom; Wherein, The top of said filter is provided with the gas outlet and the bottom that are used to discharge the gas after the filtration and is provided with the slag-drip opening that is used to discharge waste residue; The bottom of said vertical tube part is provided with the air inlet that is used for importing gas to be filtered in said straight tube, and the top of said air inlet is provided with filter house, and said filter house comprises the floral disc that is provided with through hole and is located at the ceramic element in the said through hole.
The gas-filtering device that is used for production of polysilicon technology according to the embodiment of the invention; Because adopt the gas-filtering device that is provided with ceramic element, this filter has high temperature resistant, corrosion resistant good characteristic; And stable material quality, can not impact the polysilicon product quality; Ceramic element can produce the filter core of different accuracy, and the ceramic element moulding be simple according to the requirement of filtering accuracy, and large-scale production is easy, and is cheap.
In addition, the gas-filtering device that is used for production of polysilicon technology according to the above embodiment of the present invention can also have following additional technical characterictic:
According to one embodiment of present invention, said through hole is a plurality of, and said a plurality of through holes are equipped with said ceramic element along the radial and axial even distribution of said floral disc in each said through hole.
According to one embodiment of present invention, the number of said through hole and said ceramic element is configured to and can the flow velocity of said gas be controlled at 0.01～0.2m/s.
According to one embodiment of present invention; Said ceramic element is fixed on the said floral disc through securing member; Said securing member comprises retainer ring and gland; Said retainer ring be welded on the said floral disc and the endoporus of said retainer ring corresponding with said through hole, said gland snaps onto the top of said ceramic element and is connected so that said ceramic element is fixed in the said through hole with said retainer ring.
According to one embodiment of present invention, said ceramic element is the aluminium oxide filter core.
According to one embodiment of present invention, the filtering accuracy of said aluminium oxide filter core is 800～1500 orders.
According to one embodiment of present invention, said vertical tube part is provided with access hole, and said access hole is positioned at the top of said filter house.
According to one embodiment of present invention, said gas outlet is located at the top of said upper cover and the bottom that said slag-drip opening is located at said low head.
Additional aspect of the present invention and advantage part in the following description provide, and part will become obviously from the following description, or recognize through practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage obviously with are easily understood becoming the description of embodiment from combining figs, wherein:
Fig. 1 is the gas-filtering device structural representation that is used for production of polysilicon technology according to the embodiment of the invention;
Fig. 2 is the gas-filtering device ceramic element distribution schematic diagram that is used for production of polysilicon technology according to the embodiment of the invention;
Fig. 3 is the gas-filtering device ceramic element securing member sketch map that is used for production of polysilicon technology according to the embodiment of the invention;
Fig. 4 is the reduction tail gas dry process recovery system sketch map according to the embodiment of the invention;
Fig. 5 is the schematic flow sheet of the dry method recovery of the reduction tail gas that produces in the production of polysilicon technology according to the embodiment of the invention;
Fig. 6 is the recovery process sketch map according to the reduction tail gas dry process recovery system of the embodiment of the invention.
The specific embodiment
Describe embodiments of the invention below in detail, the example of said embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Be exemplary through the embodiment that is described with reference to the drawings below, be intended to be used to explain the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention; It will be appreciated that; The orientation of indications such as term " " center ", " vertically ", " laterally ", " length ", " width ", " thickness ", " on ", D score, " preceding ", " back ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward ", " clockwise ", " counterclockwise " or position relation are for based on orientation shown in the drawings or position relation; only be to describe with simplifying for the ease of describing the present invention; rather than the device or the element of indication or hint indication must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as limitation of the present invention.
In addition, term " first ", " second " only are used to describe purpose, and can not be interpreted as indication or hint relative importance or the implicit quantity that indicates indicated technical characterictic.Thus, one or more a plurality of these characteristics can be shown or impliedly comprised to the characteristic that is limited with " first ", " second " clearly.In description of the invention, the implication of " a plurality of " is two or more, only if clear and definite concrete qualification is arranged in addition.
In the present invention, only if clear and definite regulation and qualification are arranged in addition, broad understanding should be done in terms such as term " installation ", " linking to each other ", " connection ", " fixing ", for example, can be to be fixedly connected, and also can be to removably connect, or connect integratedly; Can be mechanical connection, also can be to be electrically connected; Can be directly to link to each other, also can link to each other indirectly through intermediary, can be the connection of two element internals.For those of ordinary skill in the art, can understand above-mentioned term concrete implication in the present invention as the case may be.
In the present invention; Only if clear and definite regulation and qualification are arranged in addition; First characteristic second characteristic it " on " or D score can comprise that first and second characteristics directly contact, can comprise that also first and second characteristics are not directly contacts but through the contact of the additional features between them.And, first characteristic second characteristic " on ", " top " and " above " comprise first characteristic directly over second characteristic and oblique upper, or only represent that the first characteristic level height is higher than second characteristic.First characteristic second characteristic " under ", " below " and " below " comprise first characteristic directly over second characteristic and oblique upper, or only represent that the first characteristic level height is less than second characteristic.
At first combine accompanying drawing to specifically describe the gas-filtering device that is used for production of polysilicon technology below according to the embodiment of the invention.
As shown in Figure 1, comprise according to the gas-filtering device that is used for production of polysilicon technology of the embodiment of the invention: the upper cover 10, vertical tube part 20 and the low head 30 that connect successively from top to bottom.
Wherein, The top of said filter is provided with the gas outlet 11 and the bottom that are used to discharge the gas after the filtration and is provided with the slag-drip opening 31 that is used to discharge waste residue; The bottom of vertical tube part 20 is provided with the air inlet 21 that is used in said straight tube, importing gas to be filtered; And the top of air inlet 21 is provided with filter house, and filter house comprises the floral disc 22 that is provided with through hole and is located at the ceramic element 23 in the through hole.
Thus, according to the gas-filtering device that is used for production of polysilicon technology of the embodiment of the invention, owing to adopted ceramic element, it is high temperature resistant to make that filter has, and corrosion resistant good characteristic, and stable material quality can not impact the polysilicon product quality; Ceramic element 23 can produce the filter core of different accuracy, and ceramic element 23 moulding be simple according to the requirement of filtering accuracy, and large-scale production is easy, and is cheap.
Further contemplate cost and mass production problem, according to one embodiment of present invention, preferably, ceramic element 23 is the aluminium oxide filter core.Thus, the ceramic element 23 of this material both can satisfy high temperature resistant, corrosion resistant requirement, and large-scale production easily, can further reduce production costs.
According to one embodiment of present invention, as shown in Figure 2, through hole is a plurality of, and a plurality of through holes are equipped with ceramic element 23 along the radial and axial even distribution of floral disc 22 in each through hole.Thus, through a plurality of through holes are set, can arrange that according to the size of heat exchange area and floral disc 22 ceramic element 23 reaches filter effect with filtering the duct separately, avoiding appearance filtration duct to stop up is whole out of use situation, improves the practicality of filter.
Consider the problem of gas volume and filter area, according to one embodiment of present invention, the number of through hole and ceramic element 23 is configured to and can the flow velocity of said gas be controlled at 0.01～0.2m/s.Thus, gas is filtered more fully.
According to one embodiment of present invention; As shown in Figure 3; Ceramic element 23 is fixed on the floral disc 22 through securing member; Said securing member comprises retainer ring 241 and gland 242, retainer ring 241 be welded on the floral disc 22 and the endoporus of retainer ring 241 corresponding with through hole, gland 242 snaps onto the top of ceramic element 23 and is connected so that ceramic element 23 is fixed in the through hole with retainer ring 241.Thus, can ceramic element 23 be fixed on the floral disc 22, and fixed form is reasonable, conveniently dismantles, reduction maintenance difficulty is installed.
According to one embodiment of present invention, the filtering accuracy of said aluminium oxide filter core is 800～1500 orders.Thus, can filter out the bigger dust of order number as required.
Advantageously, according to one embodiment of present invention, vertical tube part 20 is provided with access hole 25, and access hole 25 is positioned at the top of said filter house.Thus,, can conveniently carry out trouble hunting, need not dismantle equipment through access hole 25 is set.
According to one embodiment of present invention, gas outlet 11 is located at the top of upper cover 10 and the bottom that slag-drip opening 31 is located at low head 30.Thus, can save the process of dismounting equipment so that the deslagging of filter.
Below in conjunction with Fig. 4 the application of gas-filtering device according to the present invention in reduction tail gas dry process recovery system described.
As shown in Figure 4, preferably, said reduction tail gas dry process recovery system comprises: eluting column 40, absorption system 50, adsorbent equipment 60 and first filter 70.
Be provided with the adsorbent that is used for said hydrogen is carried out adsorption treatment in the adsorbent equipment 60, with further absorption fall in the hydrogen remaining chlorosilane and hydrogen chloride.
In one example; Adsorbent equipment 60 can also be configured to and can regenerate to the adsorbent that has adsorbed chlorosilane and hydrogen chloride; Thereby the regeneration gas that obtains from adsorbent when recovering the adsorption capacity of adsorbent being discharged; And reduction tail gas dry process recovery system also comprises: second filter 80, wherein, second filter 80 is according to the above-mentioned gas-filtering device that is used for production of polysilicon technology.Second filter 80 is used for said regeneration gas is filtered, to remove high chlorosilane and solid impurity wherein and to return eluting column 40 again and carry out bubbling drip washing.
Because the above-mentioned gas-filtering device that is used for production of polysilicon technology has above-mentioned technique effect according to the present invention; Therefore; Above-mentioned reduction tail gas dry process recovery system also has the corresponding techniques effect, and can obtain high-purity hydrogen and high-purity regenerated gas according to this system.
Below further combine Fig. 5 to describe the reduction tail gas that gas-filtering device according to the present invention produces in production of polysilicon technology the application of dry method in reclaiming.
The dry method recovery of the reduction tail gas that produces in the said production of polysilicon technology particularly, can may further comprise the steps:
A) said reduction tail gas is carried out bubbling drip washing, to remove high chlorosilane and solid impurity wherein.
The reduction tail gas that b) will pass through bubbling drip washing absorbs processing, to remove chlorosilane and hydrogen chloride wherein, obtains hydrogen.
C) with said hydrogen through adsorbent adsorb with remove in the hydrogen remaining chlorosilane and hydrogen chloride, and filter through first filter 70, obtain high-purity hydrogen,
Wherein, first filter 70 is according to the described gas-filtering device that is used for production of polysilicon technology of the foregoing description.
Owing to have above-mentioned technique effect according to the above-mentioned gas-filtering device that is used for production of polysilicon technology, therefore, the dry method recovery of the reduction tail gas that produces in the above-mentioned production of polysilicon technology also has the corresponding techniques effect.
Thus, can obtain high-purity hydrogen through this dry method recovery.
The dry method recovery of the reduction tail gas that produces in the said production of polysilicon technology in one example, is further comprising the steps of:
D) adsorbent that has adsorbed chlorosilane and hydrogen chloride is regenerated the regeneration gas that obtains from adsorbent when recovering the adsorption capacity of adsorbent being discharged.Wherein, the composition of regeneration gas is hydrogen, hydrogen chloride and micro-chlorosilane.
E) said regeneration gas is filtered through second filter, obtain high-purity regenerated gas and return and carry out bubbling drip washing.
Owing to have above-mentioned technique effect according to the above-mentioned gas-filtering device that is used for production of polysilicon technology, therefore, the dry method recovery of the reduction tail gas that produces in the above-mentioned production of polysilicon technology also has the corresponding techniques effect.
Thus, can obtain high-purity regenerated gas.
In order to guarantee the normal operation of filter, improve filter efficiency, preferably, the intake air temperature that can control first filter 70 is 25～40 ℃, and admission pressure is 0.05～0.5MPa, and charge flow rate is 5000～10000Nm
3/ h; The intake air temperature of second filter 80 is 80～150 ℃, and admission pressure is 0.05～0.2MPa, and charge flow rate is 500～2000Nm
3/ h.
Specifically describe the flow process of above-mentioned reduction tail gas dry process recovery method below in conjunction with embodiment and accompanying drawing.
Embodiment 1
As shown in Figure 6, the tail gas that at first will reduce carries out bubbling drip washing through eluting column 40, is used for reduction tail gas is carried out drip washing to remove high chlorosilane and solid impurity wherein, and reduction tail gas component is chlorosilane, hydrogen and a small amount of hydrogen chloride.
Reduction tail gas after the drip washing is fed absorption system 50 absorb and take off suction,, remove wherein chlorosilane and hydrogen chloride, obtain hydrogen (wherein containing micro-hydrogen chloride and micro-chlorosilane) so that the reduction tail gas after the drip washing is absorbed processing.Absorbed chlorosilane can further separate with hydrogen chloride, thereby obtains chlorosilane and hydrogen chloride respectively.Separate the chlorosilane that obtains and after purifying, can participate in reduction reaction again, reacted reduction tail gas reclaims through the dry method recovery system once more, forms recycle.The hydrogen chloride that separation obtains can be sent into the trichlorosilane synthesis system and prepare trichlorosilane, prepares trichlorosilane and after purifying, also can participate in reduction reaction again, and reacted reduction tail gas reclaims through the dry method recovery system once more, forms recycle.
The mixture of hydrogen, micro-hydrogen chloride and micro-chlorosilane fed to be provided be used for said hydrogen carried out adsorbing with absorption in the adsorbent equipment 60 of adsorbent of adsorption treatment falling wherein micro-hydrogen chloride and micro-chlorosilane, obtain hydrogen.
Hydrogen is fed first filter 70 filter, the control intake air temperature is 25～40 ℃, and admission pressure is 0.05～0.5MPa, and charge flow rate is 5000～10000Nm
3/ h, filtering accuracy is 800～1500 orders, obtains high-purity hydrogen.The high-purity hydrogen that obtains can be participated in reduction reaction again, and reacted reduction tail gas reclaims through the dry method recovery system once more, forms recycle.
With the absorption in the adsorbent equipment 60 adsorbent of chlorosilane and hydrogen chloride regenerate, the adsorption capacity of recovery adsorbent obtains the regeneration gas that composition is hydrogen, hydrogen chloride and micro-chlorosilane gas simultaneously.
Regeneration gas is fed second filter 80 filter, the control intake air temperature is 80～150 ℃, and admission pressure is 0.05～0.2MPa, and charge flow rate is 500～2000Nm
3/ h, filtering accuracy is 800～1500 orders, obtains high-purity regenerated gas.The high-purity regenerated gas that obtains can carry out bubbling drip washing through eluting column 40, forms recycle.
In the description of this specification, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means the concrete characteristic, structure, material or the characteristics that combine this embodiment or example to describe and is contained at least one embodiment of the present invention or the example.In this manual, the schematic statement to above-mentioned term not necessarily refers to identical embodiment or example.And concrete characteristic, structure, material or the characteristics of description can combine with suitable manner in any one or more embodiment or example.
Although illustrated and described embodiments of the invention above; It is understandable that; The foregoing description is exemplary; Can not be interpreted as limitation of the present invention, those of ordinary skill in the art can change the foregoing description under the situation that does not break away from principle of the present invention and aim within the scope of the invention, modification, replacement and modification.
Claims (8)
1. a gas-filtering device that is used for production of polysilicon technology is characterized in that, comprises the upper cover, vertical tube part and the low head that connect successively from top to bottom, wherein,
The top of said filter is provided with the gas outlet and the bottom that are used to discharge the gas after the filtration and is provided with the slag-drip opening that is used to discharge waste residue,
The bottom of said vertical tube part is provided with the air inlet that is used for importing gas to be filtered in said straight tube, and the top of said air inlet is provided with filter house, and said filter house comprises the floral disc that is provided with through hole and is located at the ceramic element in the said through hole.
2. the gas-filtering device that is used for production of polysilicon technology according to claim 1 is characterized in that, said through hole is a plurality of, and said a plurality of through holes are equipped with said ceramic element along the radial and axial even distribution of said floral disc in each said through hole.
3. the gas-filtering device that is used for production of polysilicon technology according to claim 2 is characterized in that, the number of said through hole and said ceramic element is configured to and can the flow velocity of said gas be controlled at 0.01～0.2m/s.
4. the gas-filtering device that is used for production of polysilicon technology according to claim 2; It is characterized in that; Said ceramic element is fixed on the said floral disc through securing member; Said securing member comprises retainer ring and gland, said retainer ring be welded on the said floral disc and the endoporus of said retainer ring corresponding with said through hole, said gland snaps onto the top of said ceramic element and is connected so that said ceramic element is fixed in the said through hole with said retainer ring.
5. the gas-filtering device that is used for production of polysilicon technology according to claim 1 is characterized in that, said ceramic element is the aluminium oxide filter core.
6. the gas-filtering device that is used for production of polysilicon technology according to claim 5 is characterized in that, the filtering accuracy of said aluminium oxide filter core is 800～1500 orders.
7. the gas-filtering device that is used for production of polysilicon technology according to claim 1 is characterized in that said vertical tube part is provided with access hole, and said access hole is positioned at the top of said filter house.
8. the gas-filtering device that is used for production of polysilicon technology according to claim 1 is characterized in that, said gas outlet is located at the top of said upper cover and the bottom that said slag-drip opening is located at said low head.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104841208A (en) * | 2015-04-17 | 2015-08-19 | 成都易态科技有限公司 | Flue gas filtration system |
| US20230002237A1 (en) * | 2019-10-02 | 2023-01-05 | Tokuyama Corporation | Apparatus and method for producing polycrystalline silicon, and polycrystalline silicon |
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| CN202921106U (en) * | 2012-08-10 | 2013-05-08 | 中国恩菲工程技术有限公司 | Gas filter device for polycrystalline silicon production process |
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Application publication date: 20121212 |