CN102800687A - Image sensor manufacturing method and image sensor - Google Patents
Image sensor manufacturing method and image sensor Download PDFInfo
- Publication number
- CN102800687A CN102800687A CN2012103130544A CN201210313054A CN102800687A CN 102800687 A CN102800687 A CN 102800687A CN 2012103130544 A CN2012103130544 A CN 2012103130544A CN 201210313054 A CN201210313054 A CN 201210313054A CN 102800687 A CN102800687 A CN 102800687A
- Authority
- CN
- China
- Prior art keywords
- grid
- substrate
- photoresist
- image sensor
- patterning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 47
- 238000002513 implantation Methods 0.000 claims description 34
- 238000000059 patterning Methods 0.000 claims description 34
- 238000009792 diffusion process Methods 0.000 claims description 27
- 238000002347 injection Methods 0.000 claims description 23
- 239000007924 injection Substances 0.000 claims description 23
- 230000005540 biological transmission Effects 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005036 potential barrier Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 abstract 3
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 229940090044 injection Drugs 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
Images
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention provides an image sensor manufacturing method and an image sensor. The image sensor manufacturing method comprises the following steps: a floating diffusing area and grid forming step for forming the floating diffusing area within a surface area of a substrate, and then sequentially generating a grid oxidizing layer and polysilicon on the substrate; a first pouring step for pouring ion at the first time based on the combination of patterned optical resist and the grid so as to form a light sensing diode area in the substrate, wherein the grid is partially covered via the patterned optical resist, and the direction to which the ion is poured is perpendicular to the bottom of the substrate; and a second pouring step for pouring the ion at the second time through the patterned optical resist so as to form a P type doping layer on the surface of the light sensing diode area in the surface area of the substrate, wherein the direction to which the ion is poured is not perpendicular to the surface of the substrate. By adopting the method provided by the invention, a mask can be saved, and the cost of production can be reduced.
Description
Technical field
The present invention relates to semiconductor fabrication process, more particularly, the present invention relates to a kind of method for making image sensor and imageing sensor.
Background technology
Imageing sensor is an important component part of forming digital camera.According to the difference of element, can be divided into two big types of CCD (Charge Coupled Device, charge coupled cell) and CMOS (Compl ementary Metal-Oxide Semiconductor, metal oxide semiconductor device).
In imageing sensor, (transfer transistor TX) transmits light induced electron in the photodiode to adopt transfer tube.
Fig. 1 shows the transmission transistor structure that is used for imageing sensor according to prior art.
As shown in Figure 1, comprise according to the transmission transistor structure that is used for imageing sensor of prior art: 5 (being used to reduce dark current) of substrate 1, light sensitive diode district 2, surface, light sensitive diode district P type doped layer, floating diffusion region 7 (comprising well region doping 7a and source dopant 7b), grid polycrystalline silicon 3, grid oxic horizon 4, gate lateral wall 6.Wherein, light sensitive diode district 2, light sensitive diode district surface P type doped layer 5 and floating diffusion region 7 have been arranged on the substrate 1; Light sensitive diode district surface P type doped layer 5 and floating diffusion region 7 are positioned at the surf zone of silicon chip; Light sensitive diode district 2 is positioned at P type doped layer 5 belows, surface, light sensitive diode district.Grid polycrystalline silicon 3, grid oxic horizon 4, gate lateral wall 6 constitute the grid structure that is positioned at the silicon chip top.
The manufacturing approach according to the transmission transistor structure that is used for imageing sensor of prior art shown in Fig. 1 has increased a mask plate owing to form the ion implantation step of surface, light sensitive diode district P type doped layer; Be desirable to provide mask plate and manufacturing approach thereof that a kind of ability is omitted to be increased owing to the ion implantation step that forms surface, light sensitive diode district P type doped layer, reach the purpose that reduces production costs.
Summary of the invention
Technical problem to be solved by this invention is to have above-mentioned defective in the prior art, and a kind of method for making image sensor that can omit the mask plate that increases owing to the required ion implantation step of formation light sensitive diode district's surface P type doped layer is provided.
In order to realize above-mentioned technical purpose; First aspect of the present invention provides a kind of method for making image sensor; It comprises: floating diffusion region and grid form step; Be used for forming floating diffusion region, and on substrate, form grid oxic horizon and grid polycrystalline silicon subsequently successively at the surf zone of substrate; First implantation step; Be used to utilize the photoresist of patterning and the combination of grid to carry out ion injection for the first time; Thereby form the light sensitive diode district in said substrate interior; The photoresist of wherein said patterning partly covers said grid, and the direction of its intermediate ion injection is perpendicular to the surface of said substrate; And second implantation step; Be used to utilize the photoresist of said patterning to carry out ion injection for the second time; Thereby the surf zone at said substrate forms surface, light sensitive diode district P type doped layer; The direction that its intermediate ion injects is not orthogonal to the surface of said substrate, but tilts towards the grid direction.
Preferably; In said second implantation step; Regulate with respect to the location of said desired locations at the photoresist of the desired locations of the surf zone of said substrate and said patterning according to said light sensitive diode district surface P type doped layer and to inject the angle of inclination of ion in said second implantation step towards the grid direction; Thereby utilize photoresist to stop, make injection zone, avoid in electronic transmission process, producing potential barrier with a certain distance from grid.
Preferably, said method for making image sensor also comprises: photoresist is removed, and is used to remove the photoresist of said patterning; Gate lateral wall forms step, and the sidepiece that is used to form at grid oxic horizon and grid polycrystalline silicon forms gate lateral wall; And well region doping formation step, be used for forming well region and mix at floating diffusion region, thereby being divided into well region, floating diffusion region mixes and source dopant.
Second aspect of the present invention provides a kind of method for making image sensor; It comprises: floating diffusion region and grid form step; Be used for forming floating diffusion region, and on substrate, form grid oxic horizon and grid polycrystalline silicon subsequently successively at the surf zone of substrate; First implantation step; Be used to utilize the photoresist of patterning and the combination of grid to carry out ion injection for the first time; Thereby form the light sensitive diode district in said substrate interior; The photoresist of wherein said patterning partly covers said grid, and the direction of its intermediate ion injection is perpendicular to the surface of said substrate; And second implantation step; Be used to utilize the photoresist of said patterning and the combination of said grid to carry out ion injection for the second time; Thereby the surf zone at said substrate forms surface, light sensitive diode district P type doped layer; The direction that its intermediate ion injects is not orthogonal to the surface of said substrate, but tilts towards the grid direction.
Preferably; In said second implantation step; Regulate with respect to the location of said desired locations with respect to the upper surface of the location of said desired locations and grid at the photoresist of the desired locations of the surf zone of said substrate, said patterning according to light sensitive diode district surface P type doped layer and to inject the angle of inclination of ion in said second implantation step towards the grid direction; Thereby utilize stopping of photoresist and grid; Make injection zone with a certain distance from grid, avoid in electronic transmission process, can not producing potential barrier.
Preferably, said method for making image sensor also comprises: photoresist is removed, and is used to remove the photoresist of said patterning; Gate lateral wall forms step, and the sidepiece that is used to form at grid oxic horizon and grid polycrystalline silicon forms gate lateral wall; And well region doping formation step, be used for forming well region and mix at floating diffusion region, thereby being divided into well region, floating diffusion region mixes and source dopant.
First aspect of the present invention provides a kind of process through described according to a first aspect of the invention method for making image sensor or imageing sensor that the described method for making image sensor of second aspect of the present invention is processed.
According to the present invention; Adopted the photoresist of same patterning owing to form first implantation step in light sensitive diode district and second implantation step of formation light sensitive diode district, formative region surface P type doped layer, thereby omitted owing to forming the mask plate that the light sensitive diode district required ion implantation step of surface P type doped layer increases.
Description of drawings
In conjunction with accompanying drawing, and, will more easily more complete understanding be arranged and more easily understand its attendant advantages and characteristic the present invention through with reference to following detailed, wherein:
Fig. 1 schematically shows the transmission transistor structure according to the imageing sensor of prior art.
Fig. 2 schematically shows according to the floating diffusion region of the method for making image sensor of the embodiment of the invention and grid and forms step structure afterwards.
Fig. 3 schematically shows according to the structure after first implantation step of the method for making image sensor of the embodiment of the invention.
Fig. 4 schematically shows according to the structure after second implantation step of the method for making image sensor of the embodiment of the invention.
Fig. 5 schematically shows according to the photoresist of the method for making image sensor of the embodiment of the invention and removes step structure afterwards.
Fig. 6 schematically shows the imageing sensor transmission transistor structure of processing according to the method for making image sensor of the embodiment of the invention.
Need to prove that accompanying drawing is used to explain the present invention, and unrestricted the present invention.Notice that the accompanying drawing of expression structure possibly not be to draw in proportion.And in the accompanying drawing, identical or similar elements indicates identical or similar label.
Embodiment
In order to make content of the present invention clear more and understandable, content of the present invention is described in detail below in conjunction with specific embodiment and accompanying drawing.
, comprise to shown in Figure 6 like Fig. 2 according to the method for making image sensor of the embodiment of the invention:
Floating diffusion region and grid form step, are used for forming floating diffusion region 7 at the surf zone of substrate 1, and on substrate 1, form grid oxic horizon 4 and grid polycrystalline silicon 3 subsequently successively; Fig. 2 schematically shows according to the floating diffusion region of the method for making image sensor of the embodiment of the invention and grid and forms step structure afterwards.
First implantation step; Be used to utilize the photoresist 10 of patterning and the combination of grid 3 to carry out ion injection for the first time; Thereby in the said substrate 1 inner light sensitive diode district 2 that forms; The photoresist 10 of wherein said patterning partly covers (in other words, blocking) said grid 3, and the direction of its intermediate ion injection is perpendicular to the surface of said substrate 1; Fig. 3 schematically shows according to the structure after first implantation step of the method for making image sensor of the embodiment of the invention.More particularly, in first implantation step, both combine the mask as implantation step the photoresist 10 of patterning and grid 3.
Second implantation step; Be used to utilize the photoresist 10 of said patterning perhaps to utilize the photoresist 10 of said patterning and the combination of grid 3 to carry out ion injection for the second time; Thereby the surf zone at said substrate 1 forms surface, light sensitive diode district P type doped layer 5; The direction that its intermediate ion injects is not orthogonal to the surface of said substrate 1, i.e. the direction of ion injection is with respect to the surface tilt of said substrate 1; Fig. 4 schematically shows according to the structure after second implantation step of the method for making image sensor of the embodiment of the invention.
That is to say; In one embodiment; In said second implantation step; Can only utilize the photoresist 10 of said patterning to form surface, light sensitive diode district P type doped layer 5 (keeping preset distance) with grid through the surf zone that the ion that tilts is infused in said substrate 1; In this case, only the photoresist 10 through said patterning stops a part of angle-tilt ion, thereby forms surface, light sensitive diode district P type doped layer 5 at the desired locations of the surf zone of said substrate 1.At this moment; Preferably; In said second implantation step, regulate with respect to the location of said desired locations at the photoresist 10 of the desired locations of the surf zone of said substrate 1 and said patterning according to light sensitive diode district surface P type doped layer 5 and to inject ion in said second implantation step, thereby utilize photoresist to stop towards the angle of inclination of grid direction; Make injection zone with a certain distance from grid, avoid in electronic transmission process, producing potential barrier.
In alternative; In said second implantation step; Can utilize the photoresist 10 of said patterning and the next surf zone formation light sensitive diode district surface P type doped layer 5 that is infused in said substrate 1 through the ion that tilts of combination of grid 3; In this case, the photoresist 10 through said patterning and the combination of grid 3 stop a part of angle-tilt ion, thereby form surface, light sensitive diode district P type doped layer 5 at the desired locations of the surf zone of said substrate 1.At this moment; Preferably; In said second implantation step; Regulate with respect to the location of said desired locations with respect to the upper surface of the location of said desired locations and grid 3 at the photoresist 10 of the desired locations of the surf zone of said substrate 1, said patterning according to light sensitive diode district surface P type doped layer 5 and to inject the angle of inclination of ion in said second implantation step towards the grid direction; Thereby utilize stopping of photoresist and grid, make injection zone, avoid in electronic transmission process, producing potential barrier with a certain distance from grid.
Can find out; According to the abovementioned embodiments of the present invention; Adopt the photoresist 10 of same patterning owing to form first implantation step in light sensitive diode district 2 and second implantation step of formation light sensitive diode district, formative region surface P type doped layer 5, thereby omitted the mask plate that increases owing to surface, light sensitive diode district P type doped layer 5 required ion implantation steps.
After this, can be as prior art carry out subsequent step.Specifically, can carry out following step:
Photoresist is removed, and is used to remove the photoresist 10 of said patterning; Fig. 5 schematically shows according to the photoresist of the method for making image sensor of the embodiment of the invention and removes step structure afterwards.
Gate lateral wall forms step, and the sidepiece that is used to form at grid oxic horizon 4 and grid polycrystalline silicon 3 forms gate lateral wall 6.
Well region mixes and forms step, is used for forming well region doping 7a at floating diffusion region 7, thereby floating diffusion region 7 is divided into well region doping 7a and source dopant 7b.
Fig. 6 schematically shows the imageing sensor transmission transistor structure of processing according to the method for making image sensor of the embodiment of the invention.
As shown in Figure 6, the imageing sensor of processing according to the method for making image sensor of the embodiment of the invention comprises: substrate 1, light sensitive diode district 2, surface, light sensitive diode district P type doped layer 5, floating diffusion region 7 (comprising well region doping 7a and source dopant 7b), grid polycrystalline silicon 3, grid oxic horizon 4, gate lateral wall 6.
Wherein, light sensitive diode district surface P type doped layer 5 and floating diffusion region 7 have been arranged on the surf zone of substrate 1; The internal placement of substrate 1 light sensitive diode district 2; Light sensitive diode district 2 is positioned partially at P type doped layer 5 belows, surface, light sensitive diode district.
It is understandable that though the present invention with the preferred embodiment disclosure as above, yet the foregoing description is not in order to limit the present invention.For any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the technology contents of above-mentioned announcement capable of using is made many possible changes and modification to technical scheme of the present invention, or is revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (7)
1. method for making image sensor is characterized in that comprising:
Floating diffusion region and grid form step, are used for forming floating diffusion region at the surf zone of substrate, and on substrate, form grid oxic horizon and grid polycrystalline silicon subsequently successively;
First implantation step; Be used to utilize the photoresist of patterning and the combination of grid to carry out ion injection for the first time; Thereby form the light sensitive diode district in said substrate interior; The photoresist of wherein said patterning partly covers said grid, and the direction of its intermediate ion injection is perpendicular to the surface of said substrate; And
Second implantation step; Be used to utilize the photoresist of said patterning to carry out ion injection for the second time; Thereby the surf zone at said substrate forms surface, light sensitive diode district P type doped layer, and the direction that its intermediate ion injects is not orthogonal to the surface of said substrate, but tilts towards the grid direction.
2. method for making image sensor according to claim 1; It is characterized in that; In said second implantation step, regulate with respect to the location of said desired locations at the photoresist of the desired locations of the surf zone of said substrate and said patterning according to said light sensitive diode district surface P type doped layer and to inject the angle of inclination of ion in said second implantation step towards the grid direction; Utilize stopping of photoresist and grid, make injection zone, avoid in electronic transmission process, producing potential barrier with a certain distance from grid.
3. method for making image sensor according to claim 1 is characterized in that also comprising:
Photoresist is removed, and is used to remove the photoresist of said patterning;
Gate lateral wall forms step, and the sidepiece that is used to form at grid oxic horizon and grid polycrystalline silicon forms gate lateral wall; And
Well region mixes and forms step, is used for forming well region at floating diffusion region and mixes, and mixes and source dopant thereby floating diffusion region is divided into well region.
4. method for making image sensor is characterized in that comprising:
Floating diffusion region and grid form step, are used for forming floating diffusion region at the surf zone of substrate, and on substrate, form grid oxic horizon and grid polycrystalline silicon subsequently successively;
First implantation step; Be used to utilize the photoresist of patterning and the combination of grid to carry out ion injection for the first time; Thereby form the light sensitive diode district in said substrate interior; The photoresist of wherein said patterning partly covers said grid, and the direction of its intermediate ion injection is perpendicular to the surface of said substrate; And
Second implantation step; Be used to utilize the photoresist of said patterning and the combination of said grid to carry out ion injection for the second time; Thereby the surf zone at said substrate forms surface, light sensitive diode district P type doped layer; The direction that its intermediate ion injects is not orthogonal to the surface of said substrate, but tilts towards the grid direction.
5. method for making image sensor according to claim 4; It is characterized in that; In said second implantation step; Regulate with respect to the location of said desired locations with respect to the upper surface of the location of said desired locations and grid at the photoresist of the desired locations of the surf zone of said substrate, said patterning according to light sensitive diode district surface P type doped layer and to inject the angle of inclination of ion in said second implantation step towards the grid direction; Thereby utilize stopping of photoresist and grid, make injection zone, avoid in electronic transmission process, producing potential barrier with a certain distance from grid.
6. according to claim 4 or 5 described method for making image sensor, it is characterized in that also comprising:
Photoresist is removed, and is used to remove the photoresist of said patterning;
Gate lateral wall forms step, and the sidepiece that is used to form at grid oxic horizon and grid polycrystalline silicon forms gate lateral wall; And
Well region mixes and forms step, is used for forming well region at floating diffusion region and mixes, and mixes and source dopant thereby floating diffusion region is divided into well region.
7. imageing sensor through processing according to the described method for making image sensor of one of claim 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103130544A CN102800687A (en) | 2012-08-29 | 2012-08-29 | Image sensor manufacturing method and image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103130544A CN102800687A (en) | 2012-08-29 | 2012-08-29 | Image sensor manufacturing method and image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102800687A true CN102800687A (en) | 2012-11-28 |
Family
ID=47199748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012103130544A Pending CN102800687A (en) | 2012-08-29 | 2012-08-29 | Image sensor manufacturing method and image sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102800687A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546236A (en) * | 2016-06-29 | 2018-01-05 | 中芯国际集成电路制造(上海)有限公司 | A kind of cmos image sensor and preparation method thereof and electronic installation |
| CN114141795A (en) * | 2021-06-08 | 2022-03-04 | 天津大学 | Manufacturing process of high conversion gain pixel |
| CN115274723A (en) * | 2022-07-19 | 2022-11-01 | 华虹半导体(无锡)有限公司 | Method for manufacturing image sensor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06112464A (en) * | 1992-09-25 | 1994-04-22 | Matsushita Electron Corp | Manufacture of solid-state image sensing device |
| CN1665032A (en) * | 2004-03-02 | 2005-09-07 | 松下电器产业株式会社 | Method for manufacturing solid-state imaging device |
| US6969631B2 (en) * | 2003-06-16 | 2005-11-29 | Micron Technology, Inc. | Method of forming photodiode with self-aligned implants for high quantum efficiency |
| CN101471358A (en) * | 2007-12-26 | 2009-07-01 | 东部高科股份有限公司 | Image sensor and method for manufacturing the sensor |
| TW201133813A (en) * | 2010-01-15 | 2011-10-01 | Omnivision Tech Inc | CMOS image sensor with self-aligned photodiode implants |
-
2012
- 2012-08-29 CN CN2012103130544A patent/CN102800687A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06112464A (en) * | 1992-09-25 | 1994-04-22 | Matsushita Electron Corp | Manufacture of solid-state image sensing device |
| US6969631B2 (en) * | 2003-06-16 | 2005-11-29 | Micron Technology, Inc. | Method of forming photodiode with self-aligned implants for high quantum efficiency |
| CN1665032A (en) * | 2004-03-02 | 2005-09-07 | 松下电器产业株式会社 | Method for manufacturing solid-state imaging device |
| CN101471358A (en) * | 2007-12-26 | 2009-07-01 | 东部高科股份有限公司 | Image sensor and method for manufacturing the sensor |
| TW201133813A (en) * | 2010-01-15 | 2011-10-01 | Omnivision Tech Inc | CMOS image sensor with self-aligned photodiode implants |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546236A (en) * | 2016-06-29 | 2018-01-05 | 中芯国际集成电路制造(上海)有限公司 | A kind of cmos image sensor and preparation method thereof and electronic installation |
| CN107546236B (en) * | 2016-06-29 | 2020-06-09 | 中芯国际集成电路制造(上海)有限公司 | CMOS image sensor, preparation method thereof and electronic device |
| CN114141795A (en) * | 2021-06-08 | 2022-03-04 | 天津大学 | Manufacturing process of high conversion gain pixel |
| CN114141795B (en) * | 2021-06-08 | 2024-07-12 | 天津大学 | Manufacturing process of high conversion gain pixels |
| CN115274723A (en) * | 2022-07-19 | 2022-11-01 | 华虹半导体(无锡)有限公司 | Method for manufacturing image sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7728365B2 (en) | CMOS image sensor structure | |
| CN102544041B (en) | Pixel cell of cmos image sensor and preparation method thereof | |
| JP2010161236A5 (en) | ||
| CN102569312B (en) | Back side illumination type solid state imaging device and method of manufacturing the same | |
| JP2010040557A (en) | Solid state imaging device and its manufacturing method | |
| US20060267013A1 (en) | Pixel sensor having doped isolation structure sidewall | |
| CN102651372A (en) | Complementary metal oxide semiconductor (CMOS) image sensor and manufacturing method thereof | |
| CN102544042A (en) | Pixel unit of high-speed CMOS (complementary metal oxide semiconductor) image sensor and manufacturing method of pixel unit | |
| US20150333100A1 (en) | Image sensors includng well regions of different concentrations and methods of fabricating the same | |
| CN100421235C (en) | Method for manufacturing CMOS image sensing assembly | |
| CN103413816B (en) | Dot structure of cmos image sensor and forming method thereof | |
| CN102664180A (en) | Poly-silicon resistor structure and produciton method thereof | |
| CN115224067A (en) | Semiconductor structure and preparation method thereof | |
| CN103474442A (en) | COMS (complementary metal-oxide semiconductor) image sensor and manufacturing method thereof | |
| CN102800687A (en) | Image sensor manufacturing method and image sensor | |
| US20150060962A1 (en) | Solid-state imaging element and manufacturing method for solid-state imaging element | |
| CN102054771A (en) | Method for manufacturing complementary metal-oxide semiconductor (CMOS) image sensor | |
| CN102332459A (en) | CMOS (Complementary Metal Oxide Semiconductor) image sensor and forming method thereof | |
| KR20150100382A (en) | CMOS Image Sensor Having A Transfer Gate | |
| CN101211834A (en) | Image sensor and method of manufacturing image sensor | |
| CN101533802B (en) | Complementary metal oxide semiconductor image sensor and manufacturing method thereof | |
| CN112259565A (en) | A fast charge transfer method based on large-sized pixels | |
| JP4910275B2 (en) | Solid-state imaging device and manufacturing method thereof | |
| CN102709300A (en) | CMOS (complementary metal oxide semiconductor) image sensor and forming method thereof | |
| CN103268880A (en) | Production method for pixel unit and production method for image sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140508 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20140508 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20121128 |
|
| RJ01 | Rejection of invention patent application after publication |