CN102770810A - Lithographic apparatus and device manufacturing method - Google Patents
Lithographic apparatus and device manufacturing method Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
一种光刻设备,包括:两个或更多的光学装置列,配置成将束投影到衬底的目标部分上,所述两个或更多的光学装置列中的每一个包括用于提供所述束的一个或更多的辐射源(906)和用于将所述束投影到目标部分上的投影系统(920、924、930);扫描移动致动器,配置成相对于所述两个或更多的光学装置列沿扫描方向以扫描速度移动衬底;和两个或更多的位置测量装置(944),配置成确定相应的两个或更多的光学装置列相对于参考物体(940)的位置。
A photolithography apparatus includes: two or more optical arrays configured to project a beam onto a target portion of a substrate, each of the two or more optical arrays including one or more radiation sources (906) for providing the beam and a projection system (920, 924, 930) for projecting the beam onto the target portion; a scan motion actuator configured to move the substrate at a scan speed along a scan direction relative to the two or more optical arrays; and two or more position measuring devices (944) configured to determine the position of the respective two or more optical arrays relative to a reference object (940).
Description
相关申请的交叉引用Cross References to Related Applications
本申请要求于2010年2月23日递交的美国临时申请61/307,394的权益,且通过引用将其全部内容并入本文中。此外,本申请还要求于2010年4月9日递交的美国临时申请61/322,505的权益,且通过引用将其全部内容并入本文中。This application claims the benefit of US Provisional Application 61/307,394, filed February 23, 2010, which is hereby incorporated by reference in its entirety. Additionally, this application also claims the benefit of US Provisional Application 61/322,505, filed April 9, 2010, which is hereby incorporated by reference in its entirety.
技术领域 technical field
本发明涉及光刻设备、可编程图案形成装置、器件制造方法以及用于对准光刻设备的两个或更多个光学装置列(optical column)的方法。The present invention relates to a lithographic apparatus, a programmable patterning device, a method of device fabrication and a method for aligning two or more optical columns of a lithographic apparatus.
背景技术 Background technique
光刻设备是施加期望的图案到衬底或一部分衬底上的机器。光刻设备可以用于例如集成电路(IC)、平板显示器以及具有精细特征的其它装置或结构的制造中。在传统的光刻设备中,可以将称为掩模或掩模版的图案形成装置用于产生对应于IC、平板显示器或其它装置的单层的电路图案。可以将这一图案转移到衬底(例如硅晶片或玻璃板)(的一部分)上,例如经由成像将所述图案转移到在所述衬底上设置的辐射敏感材料(抗蚀剂)层上。A lithographic apparatus is a machine that applies a desired pattern to a substrate or a portion of a substrate. Lithographic apparatus can be used, for example, in the fabrication of integrated circuits (ICs), flat panel displays, and other devices or structures with fine features. In conventional lithographic apparatus, a patterning device called a mask or reticle may be used to create a circuit pattern corresponding to a single layer of an IC, flat panel display, or other device. This pattern can be transferred to (a part of) a substrate, such as a silicon wafer or a glass plate, for example via imaging onto a layer of radiation-sensitive material (resist) provided on said substrate .
除了电路图案,图案形成装置还可以用于产生其它图案,例如彩色滤光片图案或点的矩阵。替代传统的掩模,图案形成装置可以包括图案形成阵列,该图案形成阵列包括产生电路或其它可应用图案的独立可控元件的阵列。与传统的基于掩模的系统相比,这样的“无掩模”系统的优点是,可以更加快速地设置和/或更换图案,且成本较小。In addition to circuit patterns, the patterning device can also be used to generate other patterns, such as a color filter pattern or a matrix of dots. Instead of a conventional mask, the patterning device may include a patterning array comprising an array of individually controllable elements that create a circuit or other applicable pattern. An advantage of such a "maskless" system is that patterns can be set and/or changed more quickly and at less cost than conventional mask-based systems.
因此,无掩模系统包括可编程图案形成装置(例如空间光调制器、对比度装置等)。使用独立可控元件的阵列对可编程图案形成装置进行(例如电子或光学地)编程,用于形成期望的图案化的束。可编程图案形成装置的类型包括微反射镜阵列、液晶显示器(LCD)阵列、光栅光阀阵列等。Thus, maskless systems include programmable patterning devices (eg, spatial light modulators, contrast devices, etc.). The programmable patterning device is programmed (eg electronically or optically) using an array of individually controllable elements for forming the desired patterned beam. Types of programmable patterning devices include micromirror arrays, liquid crystal display (LCD) arrays, grating light valve arrays, and the like.
发明内容 Contents of the invention
在一实施例中,无掩模光刻设备可以例如设置有光学装置列,所述光学装置列配置成在衬底的目标部分上生成图案。光学装置列可以设置有:自发射式对比度装置,配置成发射多个束;和投影系统,配置成将所述多个束的至少一部分投影到目标部分上。所述设备可以设置有致动器,所述致动器配置成相对于衬底移动光学装置列或光学装置列的一部分。In an embodiment, a maskless lithographic apparatus may for example be provided with an array of optics configured to generate a pattern on a target portion of a substrate. The optical train may be provided with: a self-emissive contrast device configured to emit a plurality of beams; and a projection system configured to project at least a portion of the plurality of beams onto the target portion. The apparatus may be provided with an actuator configured to move the column of optics or a part of the column of optics relative to the substrate.
在上述类型的无掩模光刻设备中,在一个实施例中,多个光学装置列被提供,以基本上同时将投影束投影到衬底的不同目标部分上。在实践中,衬底可以被沿着大致垂直于扫描方向的方向划分成条带,每个条带与光学装置列相关联。每个条带可以被沿着平行于扫描方向的方向进一步划分成多个目标部分,之后在沿着光学装置列移动衬底时,将图案投影所述目标部分上。In a maskless lithographic apparatus of the type described above, in one embodiment a plurality of columns of optics are provided to project the projection beam onto different target portions of the substrate substantially simultaneously. In practice, the substrate may be divided into strips along a direction substantially perpendicular to the scan direction, each strip being associated with a column of optical devices. Each swath may be further divided in a direction parallel to the scan direction into a plurality of target portions on which the pattern is then projected while moving the substrate along the optical column.
在将图案投影到衬底上时,期望投影到衬底上的图案化的束被正确地与图案将产生所在的衬底表面对准且处于正焦位置。When projecting the pattern onto the substrate, it is desirable that the patterned beam projected onto the substrate is properly aligned and in focus with the substrate surface where the pattern will be generated.
对于上述类型的光刻设备,可以同时或大致同时通过使用多个光学装置列在衬底的整个宽度上生成图案,每个光学装置列配置成在衬底上的相关条带的目标部分上生成图案。为了在整个衬底上生成连续的和正确的图案,期望在光刻过程期间将光学装置列相对于衬底对准和相对于彼此对准。For a lithographic apparatus of the type described above, the pattern can be generated across the entire width of the substrate by using multiple optical columns, each configured to generate on a target portion of an associated stripe on the substrate, simultaneously or substantially simultaneously pattern. In order to generate a continuous and correct pattern across the substrate, it is desirable to align the columns of optics with respect to the substrate and with respect to each other during the photolithographic process.
期望提供一种光刻设备,所述光刻设备配置成将光刻设备的多个光学装置列中的每一个光学装置列与衬底对准。It is desirable to provide a lithographic apparatus configured to align each of a plurality of optical columns of the lithographic apparatus with a substrate.
根据本发明的实施例,提供了一种光刻设备,包括:两个或更多的光学装置列,配置成将束投影到衬底的目标部分上,所述两个或更多的光学装置列中的每一个包括用于用于提供所述束的一个或更多的辐射源和用于将所述束投影到目标部分上的投影系统;扫描移动致动器,配置成相对于所述两个或更多的光学装置列沿扫描方向以扫描速度移动衬底;和两个或更多的位置测量装置,配置成确定相应的两个或更多的光学装置列相对于参考物体的位置。According to an embodiment of the present invention, there is provided a lithographic apparatus comprising: two or more columns of optical devices configured to project a beam onto a target portion of a substrate, the two or more optical devices Each of the columns includes one or more radiation sources for providing the beam and a projection system for projecting the beam onto a target portion; a scanning movement actuator configured relative to the two or more optical trains moving the substrate along a scan direction at a scan velocity; and two or more position measuring devices configured to determine the position of the respective two or more optical trains relative to a reference object .
根据本发明的实施例,提供了一种用于对准光刻设备的光学装置列的方法,所述方法包括步骤:测量多个光学装置列的目标部分相对于参考物体的位置;相对于彼此比较相邻的光学装置列的目标位置的位置;和调节投影到目标部分上的图案用于对准光学装置列。According to an embodiment of the present invention, there is provided a method for aligning optics columns of a lithographic apparatus, the method comprising the steps of: measuring the position of target portions of a plurality of optics columns relative to a reference object; relative to each other comparing the positions of the target locations of adjacent optical columns; and adjusting the pattern projected onto the target portion for aligning the optical columns.
例如期望提供一种包括可编程图案形成装置的灵活的低成本的光刻设备。For example, it is desirable to provide a flexible, low-cost lithographic apparatus including a programmable patterning device.
在一实施例中,公开了一种光刻设备,包括:调制器,配置成将衬底的曝光区域由根据期望的图案进行调制的多个束曝光;和投影系统,配置成将被调制的束投影到衬底上。所述调制器可以相对于曝光区域是可移动的,和/或投影系统可以具有用于接收多个束的透镜阵列,所述透镜阵列相对于曝光区域是可移动的。In one embodiment, a lithographic apparatus is disclosed comprising: a modulator configured to expose an exposure region of a substrate with a plurality of beams modulated according to a desired pattern; and a projection system configured to expose the modulated The beam is projected onto the substrate. The modulator may be movable relative to the exposure area, and/or the projection system may have a lens array for receiving the plurality of beams, the lens array being movable relative to the exposure area.
附图说明 Description of drawings
并入本文中且形成说明书的一部分的附图显示了本发明的实施例,且另外与所述描述一起用于说明本发明的原理并使得相关领域的技术人员能够进行和使用本发明。在附图中,相同的参考标记可以表示相同的或功能类似的元件。The accompanying drawings, which are incorporated in and form a part of this specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention and to enable a person skilled in the relevant art to make and use the invention. In the drawings, like reference numbers may indicate identical or functionally similar elements.
图1显示根据本发明的实施例的光刻设备的示意侧视图。Figure 1 shows a schematic side view of a lithographic apparatus according to an embodiment of the invention.
图2显示根据本发明的实施例的光刻设备的示意俯视图。Figure 2 shows a schematic top view of a lithographic apparatus according to an embodiment of the invention.
图3显示根据本发明的实施例的光刻设备的示意俯视图。Figure 3 shows a schematic top view of a lithographic apparatus according to an embodiment of the invention.
图4显示根据本发明的实施例的光刻设备的示意俯视图。Figure 4 shows a schematic top view of a lithographic apparatus according to an embodiment of the invention.
图5显示根据本发明的实施例的光刻设备的示意俯视图。Figure 5 shows a schematic top view of a lithographic apparatus according to an embodiment of the invention.
图6(A)-(D)显示根据本发明的实施例的光刻设备的一部分的示意俯视图和侧视图。6(A)-(D) show schematic top and side views of a portion of a lithographic apparatus according to an embodiment of the invention.
图7(A)-(O)显示根据本发明的实施例的光刻设备的一部分的示意俯视图和侧视图。7(A)-(O) show schematic top and side views of a portion of a lithographic apparatus according to an embodiment of the invention.
图7(P)显示根据本发明的实施例的独立可寻址元件的功率/前向电流图。Figure 7(P) shows a power/forward current diagram for individually addressable elements according to an embodiment of the present invention.
图8显示根据本发明的实施例的光刻设备的示意侧视图。Figure 8 shows a schematic side view of a lithographic apparatus according to an embodiment of the invention.
图9显示根据本发明的实施例的光刻设备的示意侧视图。Figure 9 shows a schematic side view of a lithographic apparatus according to an embodiment of the invention.
图10显示根据本发明的实施例的光刻设备的示意侧视图。Figure 10 shows a schematic side view of a lithographic apparatus according to an embodiment of the invention.
图11显示根据本发明的实施例的用于光刻设备的独立可控元件的阵列的示意俯视图。Figure 11 shows a schematic top view of an array of individually controllable elements for a lithographic apparatus according to an embodiment of the invention.
图12显示使用本发明的实施例将图案转移到衬底的模式。Figure 12 shows a mode of transferring a pattern to a substrate using an embodiment of the present invention.
图13显示光学引擎的示意性布置。Figure 13 shows a schematic arrangement of the optical engine.
图14(A)和(B)显示根据本发明的实施例的光刻设备的一部分的示意侧视图。14(A) and (B) show schematic side views of a part of a lithographic apparatus according to an embodiment of the present invention.
图15显示根据本发明的实施例的光刻设备的示意俯视图。Figure 15 shows a schematic top view of a lithographic apparatus according to an embodiment of the invention.
图16(A)显示根据本发明的实施例的光刻设备的一部分的示意侧视图。Figure 16(A) shows a schematic side view of a portion of a lithographic apparatus according to an embodiment of the invention.
图16(B)显示相对于衬底的传感器的检测区域的示意位置。Figure 16(B) shows the schematic location of the detection area of the sensor relative to the substrate.
图17显示根据本发明的实施例的光刻设备的示意俯视图。Figure 17 shows a schematic top view of a lithographic apparatus according to an embodiment of the invention.
图18显示根据本发明的实施例的光刻设备的示意横截面侧视图。Figure 18 shows a schematic cross-sectional side view of a lithographic apparatus according to an embodiment of the invention.
图19显示根据本发明的实施例的具有在X-Y平面内基本上静止的独立可控元件和相对于其可移动的光学元件的光刻设备的一部分的示意俯视图的布局。Figure 19 shows a layout of a schematic top view of a portion of a lithographic apparatus having independently controllable elements substantially stationary in the X-Y plane and optical elements movable relative thereto, according to an embodiment of the invention.
图20显示图19中的光刻设备的一部分的示意三维视图。FIG. 20 shows a schematic three-dimensional view of a part of the lithographic apparatus in FIG. 19 .
图21显示根据本发明的实施例的具有在X-Y平面内基本上静止的独立可控元件和相对于其可移动的光学元件的光刻设备的一部分的示意侧视图的布局,且显示出相对于独立可控元件设定的光学元件242的三个不同的旋转位置。Figure 21 shows the layout of a schematic side view of a portion of a lithographic apparatus having independently controllable elements substantially stationary in the X-Y plane and optical elements movable relative thereto according to an embodiment of the invention, and shows the layout relative to Three different rotational positions of the
图22显示根据本发明的实施例的具有在X-Y平面内基本上静止的独立可控元件和相对于其可移动的光学元件的光刻设备的一部分的示意侧视图的布局,且显示出相对于独立可控元件设定的光学元件242的三个不同的旋转位置。Figure 22 shows the layout of a schematic side view of a portion of a lithographic apparatus having independently controllable elements substantially stationary in the X-Y plane and optical elements movable relative thereto according to an embodiment of the invention, and shows the layout relative to Three different rotational positions of the
图23显示根据本发明的实施例的具有在X-Y平面内基本上静止的独立可控元件和相对于其可移动的光学元件的光刻设备的一部分的示意侧视图的布局,且显示出相对于独立可控元件设定的光学元件242的五个不同的旋转位置。Figure 23 shows the layout of a schematic side view of a portion of a lithographic apparatus having independently controllable elements substantially stationary in the X-Y plane and optical elements movable relative thereto according to an embodiment of the invention, and shows the layout relative to Five different rotational positions of the
图24显示在使用直径为5.6mm的标准激光二极管用于获得横过衬底的宽度的全部覆盖情况下的独立可控元件102的一部分的示意性布局。Figure 24 shows a schematic layout of a portion of an individually
图25显示图24的细节的示意布局。FIG. 25 shows a schematic layout of the details of FIG. 24 .
图26显示根据本发明的实施例的具有在X-Y平面内基本上静止的独立可控元件和相对于其可移动的光学元件的光刻设备的一部分的示意侧视图的布局。Figure 26 shows a layout of a schematic side view of a portion of a lithographic apparatus having independently controllable elements substantially stationary in the X-Y plane and optical elements movable relative thereto, according to an embodiment of the invention.
图27显示根据本发明的实施例的具有在X-Y平面内基本上静止的独立可控元件和相对于其可移动的光学元件的光刻设备的一部分的示意侧视图的布局。Figure 27 shows a layout of a schematic side view of a portion of a lithographic apparatus having independently controllable elements substantially stationary in the X-Y plane and optical elements movable relative thereto, according to an embodiment of the invention.
图28显示根据本发明的实施例的具有在X-Y平面内基本上静止的独立可控元件和相对于其可移动的光学元件的光刻设备的一部分的示意侧视图的布局,且显示出相对于独立可控元件设定的光学元件242的五个不同的旋转位置。Figure 28 shows the layout of a schematic side view of a portion of a lithographic apparatus having independently controllable elements substantially stationary in the X-Y plane and optical elements movable relative thereto according to an embodiment of the invention, and shows the layout relative to Five different rotational positions of the
图29显示图28的光刻设备的一部分的示意三维视图。FIG. 29 shows a schematic three-dimensional view of a portion of the lithographic apparatus of FIG. 28 .
图30示意性显示通过图28和29中设定的单个可移动光学元件242同时写出的8条线的布置。FIG. 30 schematically shows an arrangement of 8 lines written simultaneously by a single movable
图31显示用于控制聚焦的示意性布置,其中具有图28和29的布置中的移动屋顶状部件(rooftop)。Figure 31 shows a schematic arrangement for controlling focus with a moving rooftop in the arrangement of Figures 28 and 29 .
图32显示根据本发明的实施例的具有在X-Y平面内基本上静止的独立可控元件和相对于其可移动的光学元件的、根据本发明的实施例的光刻设备的示意横截面侧视图。Figure 32 shows a schematic cross-sectional side view of a lithographic apparatus according to an embodiment of the invention having independently controllable elements substantially stationary in the X-Y plane and an optical element movable relative thereto, according to an embodiment of the invention .
图33示出根据本发明的实施例的光刻设备的一部分。Figure 33 shows a portion of a lithographic apparatus according to an embodiment of the invention.
图34示出根据本发明的实施例的图33的光刻设备的俯视图。Figure 34 shows a top view of the lithographic apparatus of Figure 33 according to an embodiment of the invention.
图35示意性地显示出根据本发明的实施例的位置测量装置的侧视图。Fig. 35 schematically shows a side view of a position measuring device according to an embodiment of the invention.
具体实施方式 Detailed ways
在此处描述了无掩模光刻设备、无掩模光刻方法、可编程图案形成装置和其它设备、制造的物件以及方法的一个或更多的实施例。在一实施例中,提供了低成本和/或灵活的无掩模光刻设备。由于它是无掩模的,因此不需要传统的掩模用于曝光例如IC或平板显示器。类似地,不需要用于封装应用的一个或更多个环;可编程图案形成装置可以为封装应用提供数字边缘处理“环”,用于避免边缘投影。无掩模(数字图案化)可以能够使用柔性的衬底。One or more embodiments of maskless lithography apparatus, maskless lithography methods, programmable patterning devices and other apparatus, articles of manufacture, and methods are described herein. In an embodiment, a low cost and/or flexible maskless lithography apparatus is provided. Since it is maskless, no conventional masks are required for exposing eg ICs or flat panel displays. Similarly, one or more rings are not required for packaging applications; the programmable patterning device can provide digital edge processing "rings" for packaging applications for avoiding edge projection. Maskless (digital patterning) may enable the use of flexible substrates.
在一实施例中,光刻设备能够用于超非临界(super-non-critical)的应用。在一实施例中,光刻设备能够具有≥0.1μm的分辨率,例如≥0.5μm的分辨率或≥1μm的分辨率。在一实施例中,光刻设备能够具有≤20μm的分辨率、例如≤10μm的分辨率或≤5μm的分辨率。在一实施例中,光刻设备能够具有~0.1-10μm的分辨率。在一实施例中,光刻设备能够具有≥50nm的重叠,例如≥100nm的重叠、≥200nm的重叠或≥300nm的重叠。在一实施例中,光刻设备能够具有≤500nm的重叠,例如≤400nm的重叠、≤300nm的重叠或≤200nm的重叠。这些重叠和分辨率值可以与衬底尺寸和材料无关。In one embodiment, the lithographic apparatus can be used for super-non-critical applications. In an embodiment, the lithographic apparatus can have a resolution > 0.1 μm, eg a resolution > 0.5 μm or a resolution > 1 μm. In an embodiment, the lithographic apparatus can have a resolution < 20 μm, eg a resolution < 10 μm or a resolution < 5 μm. In an embodiment, the lithographic apparatus is capable of a resolution of ~0.1-10 μm. In an embodiment, the lithographic apparatus is capable of having an overlap >50 nm, such as >100 nm overlap, >200 nm overlap or >300 nm overlap. In an embodiment, the lithographic apparatus can have an overlap < 500 nm, eg an overlap < 400 nm, an overlap < 300 nm or an overlap < 200 nm. These overlap and resolution values can be independent of substrate size and material.
在一实施例中,光刻设备具有很高的灵活性。在一实施例中,光刻设备可扩展至不同尺寸、类型和特性的衬底。在一实施例中,光刻设备具有实际上无限的场尺寸。因此,光刻设备可以用单个光刻设备或用使用大的公共的光刻设备平台的多个光刻设备进行多种应用(例如,IC、平板显示器、封装等)。在一实施例中,光刻设备允许产生自动化作业,用于提供柔性的制造。在一个实施例中,光刻设备提供3D集成。In one embodiment, the lithographic apparatus has high flexibility. In an embodiment, the lithographic apparatus is scalable to substrates of different sizes, types and characteristics. In an embodiment, the lithographic apparatus has a virtually infinite field size. Thus, a lithographic apparatus can be used for multiple applications (eg, IC, flat panel display, packaging, etc.) with a single lithographic apparatus or with multiple lithographic apparatuses using a large common lithographic apparatus platform. In one embodiment, the lithographic apparatus allows for automated operations for providing flexible manufacturing. In one embodiment, the lithographic apparatus provides 3D integration.
在一实施例中,光刻设备是低成本的。在一实施例中,仅使用公共的现有(off-the-shelf)的部件(例如,发射辐射二极管、简单的可移动的衬底保持器以及透镜阵列)。在一个实施例中,像素-栅格成像用于使得简单的投影光学装置进行操作。在一实施例中,使用具有单个扫描方向的衬底保持器来降低成本和/或减小复杂性。In an embodiment, the lithographic apparatus is low cost. In an embodiment, only common off-the-shelf components are used (eg radiation emitting diodes, simple movable substrate holder and lens array). In one embodiment, pixel-grid imaging is used to allow simple projection optics to operate. In an embodiment, a substrate holder with a single scan direction is used to reduce cost and/or complexity.
图1示意性地显示根据本发明的实施例的光刻投影设备100。设备100包括图案形成装置104、物体保持器106(例如物体台,例如衬底台)以及投影系统108。Fig. 1 schematically shows a
在一实施例中,图案形成装置104包括用于调制辐射的多个独立可控元件102,用于施加图案至束110。在一实施例中,可以相对于投影系统108固定多个独立可控元件102的位置。然而,在可替代的布置中,多个独立可控元件102可以连接至定位装置(未显示),用于根据特定的参数(例如相对于投影系统108)精确地定位它们中的一个或更多个。In an embodiment, the
在一实施例中,图案形成装置104是自发射式对比度装置。这样的图案形成装置104消除了对辐射系统的要求,其可以例如减小光刻设备的成本和尺寸。例如,每一独立可控元件102是发射辐射二极管,例如发光二极管(LED)、有机LED(OLED)、聚合物LED(PLED)或激光二极管(例如固态激光二极管)。在一实施例中,每一独立可控元件102是激光二极管。在一实施例中,每一独立可控元件102是蓝紫激光二极管(例如Sanyo型号no.DL-3146-151)。这样的二极管由诸如Sanyo,Nichia,Osram和Nitride等公司供应。在一实施例中,二极管发射具有约365nm或约405nm的波长的辐射。在一实施例中,二极管可以提供从0.5-100mW的范围选出的输出功率。在一实施例中,激光二极管(裸管芯)的尺寸是从250-600微米的范围选出的。在一实施例中,激光二极管具有从1-5微米的范围选出的发射区域。在一实施例中,激光二极管具有从7-44度的范围选出的发散角。在一实施例中,图案形成装置104具有约1×105个二极管,具有用于提供多于或等于约6.4×108W/(m2.sr)的总亮度的配置(例如发射区域、发散角、输出功率等)。In one embodiment, the
在一实施例中,自发射式对比度装置包括比在另一独立可控元件102不能操作或不能适当操作的情况下允许使用的“冗余”的独立可控元件102所需要的独立可寻址元件更多的独立可寻址元件102。在一实施例中,冗余的独立可控元件可能有利地用在使用例如在下文关于图5所讨论的可移动的独立可控元件102的实施例中。In one embodiment, the self-emissive contrast device includes more independently addressable elements than would be required for a "redundant" independently
在一实施例中,自发射式对比度装置中的独立可控元件102在独立可控元件102(例如激光二极管)的功率/前向电流曲线的陡斜部分中被操作。这可能是更加有效率的且导致较少的功率损耗/热量。在一实施例中,在使用时,每个独立可控元件的光输出是至少1mW,例如至少10mW、至少25mW、至少50mW、至少100mW或至少200mW。在一实施例中,在使用时,每个独立可控元件的光输出是小于300mW,小于250mW,小于200mW,小于150mW,小于100mW,小于50mW,小于25mW,或小于10mW。在一实施例中,在使用时每个可编程图案形成装置的用于操作独立可控元件的功率损耗小于10kW,例如小于5kW,小于1kW,或小于0.5kW。在一实施例中,在使用时用于操作独立可控元件的每一可编程图案形成装置的功率损耗是至少100W,例如至少300W,至少500W,或至少1kW。In an embodiment, the individually
光刻设备100包括物体保持器106。在本实施例中,物体保持器包括用于保持衬底114(例如涂覆有抗蚀剂的硅晶片或玻璃衬底)的物体台106。物体台106可以是可移动的且连接至定位装置116,用于根据特定的参数精确地定位衬底114。例如定位装置116可以相对于投影系统108和/或图案形成装置104精确地定位衬底114。在一实施例中,可以用定位装置116来实现物体台106的移动,该定位装置116包括未在图1中具体示出的长行程模块(粗定位)和可选的短行程模块(精定位)。在一实施例中,所述设备至少没有用于移动物体台106的短行程模块。可以使用类似的系统定位独立可控元件102。应当理解,束110可以替代地/另外地是可移动的,而物体台106和/或独立可控元件102可以具有固定的位置,用于提供所需要的相对移动。这样的布置可以帮助限制设备的尺寸。在可以例如用在平板显示器的制造中的实施例中,物体台106可以是静止的,定位装置116配置成相对于物体台106(例如在其上)移动衬底114。例如,物体台106可以设置有用于以基本上恒定的速度扫描跨经物体台106的衬底114的系统。在这被完成的情况下,物体台106可以在平坦的最上面的表面上设置有大量的开口,气体被供给通过所述开口、以用于提供能够支撑衬底114的气垫(gas cushion)。这通常称为气体轴承布置。使用一个或更多的致动器(未显示)在物体台106上移动衬底114,所述致动器能够相对于束110的路径精确地定位衬底114。可替代地,可以通过选择性地开启和截止气体穿过开口的通路,相对于物体台106移动衬底114。在一实施例中,物体保持器106可以是滚转系统,衬底在所述滚转系统上滚动,定位装置116可以是电机,用于转动滚转系统以提供衬底到物体台106上。The
投影系统108(例如石英和/或CaF2透镜系统或包括由这样的材料制成的透镜元件的折射反射系统、或反射镜系统)可以用于将由独立可控元件102调制的图案化的束投影到衬底114的目标部分120(例如一个或更多的管芯)上。投影系统108可以将由多个独立可控元件102所提供的图案投影成像,使得图案一致地形成在衬底114上。可替代地,投影系统108可以投影二次源的图像,多个独立可控元件102中的元件用作二次源的遮光件。A projection system 108 (such as a quartz and/or CaF lens system or a refractive reflective system comprising lens elements made of such materials, or a mirror system) may be used to project the patterned beam modulated by the individually
在这方面,投影系统可以包括一个聚焦元件、或多个聚焦元件(下文统称为透镜阵列),例如微透镜阵列(已知为MLA)或菲涅耳透镜阵列,例如用于形成二次源且使得光斑成像到衬底114上。在一实施例中,透镜阵列(例如MLA)包括至少10个聚焦元件,例如至少100个聚焦元件,至少1000个聚焦元件,至少10000个聚焦元件,至少100000个聚焦元件或至少1000000个聚焦元件。在一实施例中,图案形成装置中的独立可控元件的数量等于或大于透镜阵列中的聚焦元件的数量。在一实施例中,透镜阵列包括聚焦元件,该聚焦元件与独立可控元件阵列中的一个或更多的独立可控元件光学相关,例如仅与独立可控元件阵列中的一个独立可控元件光学相关,或与独立可控元件阵列中的两个或更多的独立可控元件光学相关,例如3个或更多的、5个或更多的、10个或更多的、20个或更多的、25个或更多的、35个或更多的、或50个或更多的独立可控元件光学相关;在一实施例中,聚焦元件与小于5000个独立可控元件光学相关,例如与小于2500个,小于1000个,小于500个,或小于100个的独立可控元件光学相关。在一实施例中,透镜阵列包括多于一个的聚焦元件(例如多于1000、大多数或约全部),其与独立可控元件阵列中的一个或更多的独立可控元件光学相关。In this regard, the projection system may comprise a focusing element, or a plurality of focusing elements (hereinafter collectively referred to as a lens array), such as a microlens array (known as MLA) or a Fresnel lens array, for example for forming a secondary source and The light spot is imaged onto the
在一实施例中,例如通过使用一个或更多的致动器,透镜阵列至少在到达衬底和远离衬底的方向上是可移动的。能够移动透镜阵列至衬底和远离衬底使得允许例如在不必移动衬底的情况下进行聚焦调整。在一实施例中,透镜阵列中的独立透镜元件(例如透镜阵列中的每个独立透镜元件)至少沿至衬底和远离衬底的方向是可移动的(例如在非平坦的衬底上进行局部聚焦调整或使得每一光学装置列达到相同的焦距)。In an embodiment, the lens array is movable at least in a direction to and away from the substrate, for example by using one or more actuators. Being able to move the lens array to and away from the substrate allows, for example, focus adjustments without having to move the substrate. In one embodiment, individual lens elements in the lens array (e.g., each individual lens element in the lens array) are movable at least in a direction to and away from the substrate (e.g., on a non-flat substrate) Local focus adjustment or so that each optical column achieves the same focal length).
在一实施例中,在例如辐射的波长大于或等于约400nm(例如405nm)时,透镜阵列包括塑料聚焦元件(其可以易于制造(例如通过注射模制)和/或是成本低的)。在一实施例中,辐射的波长从约400nm-500nm的范围选出。在一实施例中,透镜阵列包括石英聚焦元件。在一实施例中,每个聚焦元件或多个聚焦元件可以是不对称的透镜。不对称性可以对于多个聚焦元件中的每一个是相同的、或不对称性可以对于多个聚焦元件中的一个或更多的聚焦元件是不同于多个聚焦元件中的一个或更多的不同的聚焦元件的。不对称的透镜可能便于将椭圆形辐射输出转换成圆形投影斑,反之亦然。In one embodiment, the lens array comprises plastic focusing elements (which may be easy to manufacture (eg, by injection molding) and/or be inexpensive when, for example, the wavelength of the radiation is greater than or equal to about 400 nm (eg, 405 nm). In one embodiment, the wavelength of the radiation is selected from the range of about 400nm-500nm. In one embodiment, the lens array includes quartz focusing elements. In an embodiment, each focusing element or elements may be an asymmetric lens. The asymmetry may be the same for each of the plurality of focusing elements, or the asymmetry may be different for one or more of the plurality of focusing elements different focusing elements. An asymmetric lens may facilitate converting an elliptical radiant output into a circular projected spot and vice versa.
在一实施例中,聚焦元件具有高数值孔径(NA),其被布置用于将辐射在聚焦位置外投影到衬底上,以获得对于所述系统的低的NA。NA较高的透镜可以是更加经济的、流行的和/或具有比可利用的低NA透镜更好的品质。在一实施例中,低NA小于或等于0.3,在一实施例中,低NA是0.18、0.15或更小。相应地,NA更高的透镜具有比所述系统的设计NA更大的NA,例如大于0.3、大于0.18或大于0.15。In an embodiment the focusing element has a high numerical aperture (NA) arranged to project radiation onto the substrate out of focus to obtain a low NA for the system. Higher NA lenses may be more economical, popular and/or of better quality than available low NA lenses. In one embodiment, the low NA is less than or equal to 0.3, and in one embodiment, the low NA is 0.18, 0.15 or less. Correspondingly, a higher NA lens has a larger NA than the design NA of the system, for example greater than 0.3, greater than 0.18 or greater than 0.15.
虽然在一实施例中投影系统108与图案形成装置104是分离的,但是这不是必须的。投影系统108可以与图案形成装置108是一体的。例如,透镜阵列块或板可以连接(一体连接)至图案形成装置104。在一实施例中,透镜阵列可以成独立空间分离的小透镜的形式,每一小透镜连接(一体连接)至图案形成装置104中的独立可寻址元件,如下文更加详细描述的。Although in one
可选地,光刻设备可以包括将辐射(例如紫外(UV)辐射)供给至多个独立可控元件102的辐射系统。如果图案形成装置自身是辐射源(例如激光二极管阵列或LED阵列),那么可以设计光刻设备而没有辐射系统,即没有除了图案形成装置自身之外的辐射源,或至少是简化的辐射系统。Optionally, the lithographic apparatus may include a radiation system that supplies radiation, such as ultraviolet (UV) radiation, to the plurality of individually
辐射系统包括照射系统(照射器),所述照射系统配置用于接收来自辐射源的辐射。照射系统包括下述元件中的一个或更多个元件:辐射传递系统(例如适合的定向反射镜)、辐射调节装置(例如扩束器)、用于设定所述辐射的角强度分布(通常,可以调整照射器的光瞳面中的强度分布的至少所述外部和/或内部径向范围(一般分别称为σ-外部和σ-内部))的调整装置、积分器和/或聚光器。照射系统可以用于调整辐射,该辐射可以提供至独立可控元件102,用于在其横截面中具有期望的均匀性和强度分布。照射系统可以布置成将辐射分成多个子束,所述子束可以例如每个与多个独立可控元件中的一个或更多个相关。二维衍射光栅可以例如用于将辐射分成子束。在所述描述中,术语“辐射的束”和“辐射束”包括但不限于束由多个这样的辐射子束构成的情形。The radiation system includes an illumination system (illuminator) configured to receive radiation from a radiation source. The illumination system comprises one or more of the following elements: a radiation delivery system (e.g. a suitable directional mirror), radiation conditioning means (e.g. a beam expander), means for setting the angular intensity distribution of said radiation (typically , adjustment means, integrators and/or condensers that can adjust at least said outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in the pupil plane of the illuminator device. The illumination system can be used to tailor the radiation that can be provided to the individually
辐射系统还可以包括辐射源(例如准分子激光器),用于产生供给至多个独立可控元件102或由多个独立可控元件102的辐射。辐射源和光刻设备100可以是分立的实体,例如在辐射源是准分子激光器时。在这样的情形下,不会将辐射源考虑成形成光刻设备100的一部分,且辐射从源传递至照射器。在其它情形下,辐射源可以是光刻设备100的组成部分,例如在源是汞灯时。应当理解,这两种情形都被设计在本发明的范围内。The radiation system may also include a radiation source, such as an excimer laser, for generating radiation supplied to or by the plurality of individually
在一实施例中,辐射源可以是多个独立可控元件102,在一实施例中辐射源可以提供波长为至少5nm,例如至少10nm,至少50nm,至少100nm,至少150nm,至少175nm,至少200nm,至少250nm,至少275nm,至少300nm,至少325nm,至少350nm或至少360nm的辐射。在一实施例中,辐射的波长为至多450nm,例如至多425nm,至多375nm,至多360nm,至多325nm,至多275nm,至多250nm,至多225nm,至多200nm,或至多175nm。在一实施例中,辐射的波长包括436nm,405nm,365nm,355nm,248nm,193nm,157nm,126nm,和/或13.5nm。在一实施例中,辐射包括约365nm或约355nm的波长。在一实施例中,辐射包括宽带波长,例如包括365nm,405nm和436nm。可以使用355nm激光源。在一实施例中,辐射具有的波长为约405nm。In one embodiment, the radiation source can be a plurality of independently
在一实施例中,以在0和90°之间的角度、例如5和85°之间、15和75°之间、25和65°之间或在35和55°之间的角度从照射系统将辐射引导到图案形成装置104。来自照射系统的辐射可以被直接提供至图案形成装置104。在可替代的实施例中,可以通过分束器(未显示)将辐射从照射系统引导至图案形成装置104,该分束器配置成使得辐射最初被分束器反射且被引导至图案形成装置104。图案形成装置104调制所述束且将它反射返回至分束器,该分束器朝向衬底114传输被调制的束。然而,应当理解,可替代的布置可以用于将辐射引导至图案形成装置104且之后引导至衬底114。尤其是,如果使用透射式图案形成装置104(例如LCD阵列)或图案形成装置104是自发射式的(例如多个二极管),那么可能不需要照射系统布置。In an embodiment, the illumination system is illuminated at an angle between 0 and 90°, such as between 5 and 85°, between 15 and 75°, between 25 and 65°, or between 35 and 55°. Radiation is directed to
在光刻设备100的操作中,在图案形成装置104不是发射辐射型的(例如包括LED)时,辐射从辐射系统(照射系统和/或辐射源)入射到图案形成装置104(例如多个独立可控元件)上,且通过图案形成装置104进行调制。在已经通过多个独立可控元件102产生之后,图案化的束110穿过投影系统108,该投影系统108将束110聚焦到衬底114的目标部分120上。In operation of the
在定位装置116(和可选地在基架136上的位置传感器134(例如接收干涉束138的干涉测量装置、线性编码器或电容传感器))的帮助下,可以精确地移动衬底114,例如以便在束110的路径中定位不同的目标部分120。在使用时,用于多个独立可控元件102的定位装置可以用于相对于束110的路径精确地校正多个独立可控元件102的位置,例如在扫描期间。With the aid of the positioning device 116 (and optionally a
虽然根据本发明的实施例的光刻设备100在此处描述成用于曝光衬底上的抗蚀剂,但是应当理解,设备100可以用于投影图案化的束110,用于用在无抗蚀剂的光刻术中。Although a
如此处所显示的,光刻设备100是反射类型的(例如采用反射式独立可控元件)。可替代地,设备可以是透射类型的(例如采用透射式独立可控元件)。As shown here, the
可以将所述专用设备100用于以下的一种或更多种模式中,例如:The
1.在步进模式中,在将独立可控元件102和衬底114保持为基本静止的同时,将整个图案化的辐射束110一次投影到目标部分120上(即,单一的静态曝光)。然后将衬底114沿X和/或Y方向移动,使得可以使得不同目标部分120被图案化的辐射束110曝光。在步进模式中,曝光场的最大尺寸限制了在单一的静态曝光中成像的所述目标部分120的尺寸。1. In step mode, the entire
2.在扫描模式中,在对独立可控元件102和衬底114同步地进行扫描的同时,将图案化的辐射束110投影到目标部分120上(即,单一的动态曝光)。衬底相对于独立可控元件的速度和方向可以通过所述投影系统PS的(缩小)放大率和图像反转特征来确定。在扫描模式中,曝光场的最大尺寸限制了单一动态曝光中所述目标部分的宽度(沿非扫描方向),而所述扫描运动的长度确定了所述目标部分的高度(沿所述扫描方向)。2. In scanning mode, the patterned
3.在脉冲模式中,独立可控元件102保持为基本静止,且使用(例如由脉冲辐射源或通过脉冲调制独立可控元件所提供的)脉冲将整个图案投影到衬底114的目标部分120上。以基本上恒定的速度移动衬底114,使得图案化的束110进行经过衬底114的线扫描。由独立可控元件提供的图案根据需要在脉冲之间进行更新,脉冲被时间控制成使得在衬底114上的所需位置处曝光连续的目标部分120。因此,图案化的束110可以横过衬底114进行扫描,以为衬底114的条带曝光完整的图案。重复所述过程,直到整个衬底114已经被逐行曝光为止。3. In pulsed mode, the individually
4.在连续扫描模式中,除了衬底114被相对于调制的辐射束B以基本上恒定的速度进行扫描且独立可控元件阵列上的图案在图案化的束110横过衬底114进行扫描且使得它曝光时进行更新之外,实质上与脉冲模式相同。可以使用基本上恒定的辐射源或脉冲辐射源,其被使得与独立可控元件阵列上的图案的更新同步。4. In continuous scan mode, except that the
也可以采用上述使用模式的组合和/或变体,或完全不同的使用模式。Combinations and/or variations of the above described modes of use, or entirely different modes of use may also be employed.
图2显示用于与晶片(例如300mm的晶片)一起使用的根据本发明的实施例的光刻设备的示意俯视图。如图2所示,光刻设备100包括用于保持晶片114的衬底台106。定位装置116与衬底台106相关联,用于在至少X方向上移动衬底台106。可选地,定位装置116可以在Y方向和/或Z方向上移动衬底台106。定位装置116还可以围绕X、Y和/或Z方向旋转衬底台106。因此,定位装置116可以提供高达到6个自由度的运动。在一实施例中,衬底台106提供仅在X方向上的运动,其优点是成本较低和复杂性较低。在一实施例中,衬底台106包括中继光学装置。Figure 2 shows a schematic top view of a lithographic apparatus according to an embodiment of the invention for use with a wafer, eg a 300mm wafer. As shown in FIG. 2 , the
光刻设备100还包括布置在框架160上的多个独立可寻址元件102。框架160可以与衬底台106和其定位装置116机械隔离。可以例如通过将框架160连接至地面或与用于衬底台106和/或其定位装置116的框架分立的牢固的基架,来提供机械隔离。另外或可替代地,可以将阻尼器设置在框架160和与该框架连接的所述结构之间,而不论所述结构是否是地面、牢固的基架或用于支撑衬底台106和/或其定位装置116的框架。The
在本实施例中,每一个独立可寻址元件102是发射辐射二极管,例如蓝紫激光二极管。如图2所示,可以将独立可寻址元件102布置成沿着Y方向延伸的独立可寻址元件102的至少3个分立的阵列。在一实施例中,独立可寻址元件102的阵列与相邻的独立可寻址元件102的阵列在X方向上交错。光刻设备100,尤其是独立可寻址元件102可以布置成提供如此处更加详细描述的像素-栅格成像。In this embodiment, each individually
独立可寻址元件102的阵列中的每一个可以是独立光学引擎部件的一部分,为了便于复制,其可以被制造成一个单元。另外,框架160可以配置成是可扩大的且可配置成易于采用任意数量的这样的光学引擎部件。光学引擎部件可以包括独立可寻址元件102的阵列和透镜阵列170(参见例如图8)的组合。例如,在图2中显示出3个光学引擎部件(在独立可寻址元件102的每个各自的阵列下面具有相关的透镜阵列170)。因此,在一实施例中,可以提供多柱光学布置,且每个光学引擎形成一柱。Each of the array of individually
另外,光刻设备100包括对准传感器150。对准传感器用于在衬底114的曝光之前和/或期间确定独立可寻址元件102和衬底114之间的对准。对准传感器150的结果可以被光刻设备100中的控制器使用,用于例如控制定位装置116来定位衬底台106,来改善对准。此外或可替代地,控制器可以例如控制与独立可寻址元件102相关的用于定位一个或更多的独立可寻址元件102的定位装置,来改善对准。在一实施例中,对准传感器150可以包括用于执行对准的图案识别功能/软件。In addition, the
此外或可替代地,光刻设备100包括水平传感器150。水平传感器150用于确定衬底106是否相对于来自独立可寻址元件102的图案的投影是水平的。水平传感器150可以在曝光衬底114之前和/或期间确定水平程度。水平传感器150的结果可以被光刻设备100中的控制器使用,例如控制定位装置116来定位衬底台106,以改善调平。此外或可替代地,控制器可以控制例如用于定位投影系统108(例如透镜阵列)中的元件的、与投影系统108(例如透镜阵列)相关联的定位装置,来改善调平。在一实施例中,可以通过将超声束投射到衬底106上对水平传感器进行操作和/或通过将电磁辐射束投影到衬底106上对其进行操作。Additionally or alternatively, the
在一实施例中,来自对准传感器和/或水平传感器的结果可以用于改变由独立可寻址元件102所提供的图案。图案可以被改变用于校正例如变形,该变形可能由例如独立可寻址元件102和衬底114之间的光学装置(如果有的话)、在衬底114的定位中的不规则性、衬底114的不平整度等引起。因此,来自对准传感器和/或水平传感器的结果可以用于改变所投影的图案,来实现非线性变形校正。非线性变形校正可能对于例如柔性显示器是有利的,柔性显示器可能不具有一致的线性或非线性变形。In an embodiment, the results from the alignment sensors and/or level sensors may be used to change the pattern provided by the individually
在光刻设备100的操作中,使用例如机器人输送器(未显示)将衬底114装载到衬底台106上。之后,衬底114沿X方向在框架160和独立可寻址元件102下面移位。衬底114被水平传感器和/或对准传感器150测量,且之后使用独立可寻址元件102使衬底被图案曝光。例如,衬底114被扫描通过投影系统108的焦平面(像平面),同时子束并且因此图像斑S(参见例如图12)由图案形成装置104被切换成至少部分地接通(ON)或全部接通(ON)或关断(OFF)。对应于图案形成装置104中的图案的特征形成在衬底114上。独立可寻址元件102可以被操作,例如用于提供如此处所述的像素-栅格成像。In operation of the
在一实施例中,衬底114可以在正X方向上被完全扫描,且之后在负X方向上被完全扫描。在这样的实施例中,在独立可寻址元件102的相反侧上的额外的水平传感器和/或对准传感器150对于负X方向扫描可能是需要的。In an embodiment, the
图3显示用于在制造例如平板显示器(例如LCD、OLED显示器等)中曝光衬底的根据本发明的实施例的光刻设备的示意俯视图。如同如图2中显示的光刻设备100,光刻设备100包括用于保持平板显示器衬底114的衬底台106、在高达6个自由度上移动衬底台106的定位装置116、用于确定独立可寻址元件102和衬底114之间的对准的对准传感器150和水平传感器150,所述水平传感器50用于确定衬底114相对于来自独立可寻址元件102的图案的投影是否是水平的。Figure 3 shows a schematic top view of a lithographic apparatus according to an embodiment of the invention for exposing substrates in the manufacture of eg flat panel displays (eg LCD, OLED displays, etc.). Like the
光刻设备100还包括布置在框架160上的多个独立可寻址元件102。在这一实施例中,每个独立可寻址元件102是发射辐射二极管,例如蓝紫激光二极管。如图3所示,独立可寻址元件102被布置成在Y方向上延伸的大量的(例如至少8个)静止的分离的独立可寻址元件102的阵列。在一实施例中,阵列是基本上静止的,即它们不会在投影期间显著地移动。另外,在一实施例中,大量的独立可寻址元件102的阵列与相邻的独立可寻址元件102的阵列以交替地方式在X方向上交错。光刻设备100,尤其是独立可寻址元件102,可以被布置以提供像素-栅格成像。The
在光刻设备100的操作中,使用例如机器人输送器(未显示)将平板显示器衬底114装载到衬底台106上。之后,衬底114沿X方向在框架160和独立可寻址元件102下面移位。衬底114被水平传感器和/或对准传感器150测量,且之后通过使用独立可寻址元件102而被图案曝光。独立可寻址元件102可以被操作,例如用于提供如此处所述的像素-栅格成像。In operation of the
图4显示用于辊对辊的柔性显示器/电子装置的根据本发明实施例的光刻设备的示意俯视图。如同图3中显示的光刻设备100,光刻设备100包括布置在框架160上的多个独立可寻址元件102。在这一实施例中,每一独立可寻址元件102是发射辐射二极管,例如蓝紫激光二极管。另外,光刻设备包括用于确定独立可寻址元件102和衬底114之间的对准的对准传感器150和用于确定衬底114相对于来自独立可寻址元件102的图案的投影是否水平的水平传感器150。Figure 4 shows a schematic top view of a lithographic apparatus according to an embodiment of the present invention for roll-to-roll flexible displays/electronics. Like the
光刻设备还可以包括具有物体台106的物体保持器,衬底114在物体台106上移动。衬底114是柔性的且被滚动到连接至定位装置116的辊上,该定位装置116可以是转动辊的电机。在一实施例中,衬底114可以另外或可替代地从连接至定位装置116的辊滚动,该定位装置可以是转动辊的电机。在一实施例中,具有至少两个辊,一个辊是衬底滚动离开的辊,另一个辊是衬底所滚动到达的辊。在一实施例中,如果例如衬底114在辊之间是足够刚性的,那么不需要设置物体台106。在这样的情形中,将仍然具有物体保持器,例如一个或更多的辊。在一实施例中,光刻设备可以提供无载体(carrier-less)衬底(例如无载体箔片(CLF))和/或辊对辊制造。在一实施例中,光刻设备可以提供片材对片材的制造。The lithographic apparatus may also include an object holder having an object table 106 on which the
在光刻设备100的操作中,柔性衬底114在框架160和独立可寻址元件102的下面沿X方向滚动到辊上和/或滚动离开辊。衬底114被水平传感器和/或对准传感器150测量,且之后使用独立可寻址元件102使衬底114被图案曝光。独立可寻址元件102可以被操作,例如提供如在此处所讨论的像素-栅格成像。In operation of the
图5显示具有可移动独立可寻址元件102的根据本发明实施例的光刻设备的示意俯视图。如同图2中显示的光刻设备100,光刻设备100包括用于保持衬底114的衬底台106、在高达6个自由度上移动衬底台106的定位装置116、用于确定独立可寻址元件102和衬底114之间的对准的对准传感器150、和确定衬底114是否相对于来自独立可寻址元件102的图案的投影处于水平的水平传感器150。FIG. 5 shows a schematic top view of a lithographic apparatus according to an embodiment of the invention with movable individually
光刻设备100还包括布置在框架160上的多个独立可寻址元件102。在这一实施例中,每一独立可寻址元件102是发射辐射二极管,例如激光二极管(诸如蓝紫激光二极管)。如图5所示,独立可寻址元件102布置成沿着Y方向延伸的大量的分离的独立可寻址元件102的阵列200。另外,在一实施例中,大量的独立可寻址元件102的阵列200以交替的方式沿着X方向与独立可寻址元件102的相邻的阵列200交错。光刻设备100,尤其是独立可寻址元件102,可以布置成提供像素-栅格成像。然而,在一实施例中,光刻设备100不需要提供像素-栅格成像。更确切地,光刻设备100可以以不形成用于投影到衬底上的单个像素、而是形成用于投影到衬底上的大致连续的图像的方式将二极管的辐射投影到衬底上。The
在一实施例中,多个独立可寻址元件102中的一个或更多个在曝光区域和曝光区域外的位置之间是可移动的,在曝光区域中一个或更多的独立可寻址元件用于将束110的全部或一部分投影,在该曝光区域外的位置中一个或更多的独立可寻址元件不会投影任何束110。在一实施例中,一个或更多的独立可寻址元件102是发射辐射器件,其在曝光区域204中被接通(ON)或至少部分接通(ON),即它们(图5中的淡阴影区域中)发射辐射,以及在位于曝光区域204的外部时被关断(OFF),即它们不发射辐射。In one embodiment, one or more of the plurality of individually
在一实施例中,一个或更多的独立可寻址元件102是发射辐射器件,其可以在曝光区域204和曝光区域204的外部被接通(ON)。在这样的情形下,如果例如辐射没有通过一个或更多的独立可寻址元件102适当地投影到曝光区域204中,那么一个或更多的独立可寻址元件102可以在曝光区域204的外部被接通用于提供补偿曝光。例如,参考图5,与曝光区域204相对的阵列中的一个或更多的独立可寻址元件102可以被接通(ON),用于校正在曝光区域204中的失效的或不适当的辐射投影。In an embodiment, one or more of the individually
在一实施例中,曝光区域204是细长的线。在一实施例中,曝光区域204是一个或更多的独立可寻址元件102的一维阵列。在一实施例中,曝光区域204是一个或更多的独立可寻址元件102的二维阵列。在一实施例中,曝光区域204是细长的。In one embodiment, exposed
在一实施例中,每个可移动的独立可寻址元件102可以独立地移动,不必一起作为一个单元。In one embodiment, each movable individually
在一实施例中,一个或更多的独立可寻址元件是可移动的,且在使用时至少在束110的投影期间沿着横向于束110的传播方向的方向移动。例如,在一实施例中,一个或更多的独立可寻址元件102是发射辐射器件,其在束110的投影期间沿着基本上垂直于束110的传播方向的方向移动。In an embodiment, one or more of the individually addressable elements are movable and, in use, move in a direction transverse to the direction of propagation of the
在一实施例中,每个阵列200是可横向移位的板,该板具有沿着如图6所示的板布置的多个空间上分离的独立可寻址元件102。在使用中,每个板沿着方向208平移。在使用中,独立可寻址元件102的运动被适当地定时控制以位于曝光区域204中(显示为图6中的深阴影区域),以便将全部或一部分束110投影。例如,在一实施例中,一个或更多的独立可寻址元件102是发射辐射器件,独立可寻址元件102的接通或关断被定时控制,使得一个或更多的独立可寻址元件102在它们在曝光区域204中时被接通(ON),在它们在区域204外时被关断(OFF)。例如在图6(A)中,多个发射辐射二极管200的二维阵列被沿着方向208平移,两个阵列沿着正方向208,在两个阵列之间的中间一个阵列沿着负方向208。发射辐射二极管102的接通(ON)或关断(OFF)被定时控制,使得每一阵列200中的特定的发射辐射二极管102在它们位于曝光区域204中时被接通(ON),而在它们在区域204外时被关断(OFF)。当然,在例如阵列200到达它们行程的末端时,阵列200可以在相反的方向上行进,即两个阵列沿负方向208,两个阵列之间的中间一个阵列沿正方向208。在另外的例子中,在图6(B)中,发射辐射二极管200的多个相互交织的一维阵列沿方向208平移,在正方向208上和负方向208上交替。发射辐射二极管102的接通(ON)或关断(OFF)被定时控制,使得每一阵列200中的特定发射辐射二极管102在它们位于曝光区域204中时被接通(ON),且在它们位于区域204外时被关断(OFF)。当然,阵列200可以沿相反的方向行进。在另一例子中,在图6(C)中,发射辐射二极管200的单个阵列(显示为一维阵列,但这不是必须的)被沿方向208平移。发射辐射二极管102的接通(ON)或关断(OFF)被定时控制,使得每一阵列200的特定发射辐射二极管102在它们位于曝光区域204中时被接通(ON)而在它们位于区域204外时被关断(OFF)。In one embodiment, each
在一实施例中,每一阵列200是可旋转的板,该板具有围绕板布置的多个空间上分离的独立可寻址元件102。在使用中,每一板围绕其自身的轴线206旋转,例如在图5中的箭头所显示的方向上。也就是,阵列200可以可替代地沿如图5显示的顺时针和逆时针方向旋转。可替代地,每一阵列200可以沿顺时针方向旋转或沿逆时针方向旋转。在一实施例中,阵列200旋转整整一圈。在一实施例中,阵列200旋转的弧度小于完整的一圈。在一实施例中,如果例如衬底沿着Z方向进行扫描,那么阵列200可以围绕沿着X或Y方向延伸的轴线旋转。在一实施例中,参考图6(D),阵列200中的独立可寻址元件102可以布置在边缘处,且沿着向外朝向衬底114的径向方向投影。衬底114可以围绕阵列200的侧边的至少一部分延伸。在这种情形中,阵列200围绕沿着X方向延伸的轴线旋转,且衬底114沿X方向移动。In one embodiment, each
在使用中,独立可寻址元件102的运动被适当地定时控制用于定位在曝光区域204中,以便将束110的全部或一部分投影。例如,在一实施例中,一个或更多的独立可寻址元件102是发射辐射器件,独立可寻址元件102的接通(ON)或关断(OFF)被定时控制,使得一个或更多的独立可寻址元件102在它们位于曝光区域204中时被接通(ON)且在它们位于区域204外时被关断(OFF)。因此,在一实施例中,发射辐射器件102可以在运动期间全都保持接通,之后某些发射辐射器件102在曝光区域204中被调制成关断(OFF)。在发射辐射器件102和衬底之间的且在曝光区域204外的适合的遮蔽可能是需要的,用于遮蔽曝光区域204防止发射辐射器件102在曝光区域204外被接通(ON)。使得发射辐射器件102一致地接通(ON)可以在使用期间便于使得发射辐射器件102处于基本上一致的温度。在一实施例中,发射辐射器件102可以在大部分时间保持关断(OFF),而在处于曝光区域204中时一个或更多的发射辐射器件102被接通(ON)。In use, the movement of the individually
在一实施例中,可旋转板可以具有如图7所示的配置。例如,在图7(A)中,显示了可旋转板的示意俯视图。可旋转板可以具有阵列200,该阵列200具有围绕板布置的独立可寻址元件102的多个子阵列210(与图5中的可旋转板相比,其示意性地显示围绕板布置的独立可寻址元件102的单个阵列200)。在图7(A)中,子阵列210显示为彼此交错,使得一个子阵列210的独立可寻址元件102在另一子阵列210的两个独立可寻址元件102之间。然而,子阵列210的独立可寻址元件102可以彼此对准。独立可寻址元件102可以独立地或一起通过电机216围绕轴线旋转,在这一例子中,轴线沿着图7(A)中的Z方向延伸通过电机216。电机216可以连接至可旋转板且连接至框架(例如框架160)、或连接至框架(例如框架160)且连接至可旋转板。在一实施例中,电机216(或例如,位于另外位置的某个电机)可能引起独立可寻址元件102的另外的移动,不论是单独地或一起地移动。例如,电机216可以引起一个或更多的独立可寻址元件102在X、Y和/或Z方向上的平移。另外或可替代地,电机216可能引起一个或更多的独立可寻址元件102围绕X和/或Y方向的旋转(即,Rx和/或Ry运动)。In an embodiment, the rotatable plate may have a configuration as shown in FIG. 7 . For example, in Fig. 7(A) a schematic top view of a rotatable plate is shown. The rotatable plate may have an
在作为俯视图的图7(B)中示意性地显示的可旋转板的实施例中,可旋转板可能在其中心区域具有开口212,且独立可寻址元件102的阵列200布置在开口212外面的板上。因此,例如可旋转板可以形成如图7(B)所显示的环形盘,且独立可寻址元件102的阵列200围绕盘布置。开口可以减小可旋转板的重量,和/或便于冷却独立可寻址元件102。In the embodiment of the rotatable plate shown schematically in FIG. 7(B) as a top view, the rotatable plate may have an
在一实施例中,可以使用支撑件204在外周边处支撑可旋转板。支撑件214可以是轴承,例如辊子轴承或气体轴承。旋转(和/或其它运动,例如沿着X、Y和/或Z方向的平移和/或Rx运动和/或Ry运动)可以通过如图7(A)所显示的电机216来提供。另外地或可替代地,支撑件214可以包括使得独立可寻址元件102围绕轴线A旋转(和/或提供其它移动,例如沿着X、Y和/或Z方向的平移和/或Rx运动和/或Ry运动)的电机。In an embodiment, supports 204 may be used to support the rotatable plate at the outer perimeter. The
在一实施例中,参考图7(D)和7(E),具有独立可寻址元件102的阵列200的可旋转板可以连接至可旋转结构218。可旋转结构218可以通过电机220围绕轴线B旋转。另外,可旋转板可以通过电机216相对于可旋转结构218旋转,电机216使得可旋转板围绕轴线A旋转。在一实施例中,旋转轴线A和B不会重合,因此轴线如图7(D)和7(E)中显示的在空间上是分离的。在一实施例中,旋转轴线A和B基本上彼此平行。在曝光期间的使用中,可旋转结构218和可旋转板旋转。旋转可以被协调,使得独立可寻址元件102在曝光区域204中可以沿着大致直线对准。这可以与例如图5的实施例相比较,其中曝光区域204中的独立可寻址元件102可以不被沿着大致直线对准。In one embodiment, referring to FIGS. 7(D) and 7(E), a rotatable plate with an
在具有如上文所述的可移动的独立可寻址元件的情况下,在需要时可以通过将独立可寻址元件移动到曝光区域204中来减少独立可寻址元件的数量。因此,可以减小热负载。With movable individually addressable elements as described above, the number of individually addressable elements can be reduced by moving the individually addressable elements into the
在一实施例中,可以提供比理论上所需要的可移动的独立可寻址元件(例如在可旋转板上)更多的可移动的独立可寻址元件。这一布置的可能的优点是:如果一个或更多的可移动的独立可寻址元件破裂或不能操作,替代地可以使用一个或更多的其它可移动的独立可寻址元件。另外或可替代地,额外的可移动的独立可寻址元件可以具有控制独立可寻址元件上的热负载的优点,这是因为可移动的独立可寻址元件越多,曝光区域204外的可移动的独立可寻址元件的冷却机会就越大。In an embodiment, more movable individually addressable elements may be provided than theoretically required (eg on a rotatable plate). A possible advantage of this arrangement is that if one or more movable individually addressable elements break or fail to operate, one or more other movable individually addressable elements can be used instead. Additionally or alternatively, additional movable individually addressable elements may have the advantage of controlling the thermal load on the individually addressable elements, because the more movable individually addressable elements, the The cooling opportunities for movable individually addressable elements are greater.
在一实施例中,可移动的独立可寻址元件102被内嵌到具有低热导率的材料中。例如,材料可以是陶瓷的,例如堇青石或基于堇青石的陶瓷和/或微晶玻璃(Zerodur)陶瓷。在一实施例中,可移动的独立可寻址元件102内嵌在具有高热导率的材料中,诸如金属,例如相对轻质的金属,例如铝或钛。In one embodiment, the movable individually
在一实施例中,阵列200可以包括温度控制布置。例如,参考图7(F),阵列200可以具有流体(例如液体)引导通道222,用于传输冷却流体到阵列200上、传输冷却流体到阵列200附近或传输冷却流体通过阵列200来冷却阵列。通道222可以连接至适合的热交换器和泵228,以使得流体通过通道循环。在通道222与热交换器和泵228之间连接的供给装置224和回送装置226可以促进流体的循环和温度控制。传感器234可以设置在阵列中、阵列上或阵列附近,以测量阵列200的参数,所得测量结果可以用于控制由热交换器和泵提供的流体流的温度。在一实施例中,传感器234可以测量阵列200的主体的膨胀和/或收缩,所得测量结果可以用于控制由热交换器和泵所提供的流体流的温度。这样的膨胀和/或收缩可以是温度的代表。在一实施例中,传感器234可以与阵列200集成(如由成点的形式的传感器234所显示的)和/或可以与阵列200是分立的(如由成盒形式的传感器234所显示的)。与阵列200分立的传感器234可以是光学传感器。In an embodiment,
在一实施例中,参考图7(G),阵列200可以具有一个或更多的散热片230,用于增加散热的表面积。散热片230可以例如位于阵列200的顶表面上和/或在阵列200的侧表面上。可选地,一个或更多的另外的散热片232可以被提供用于与散热片230配合,以便于散热。例如,散热片232能够从散热片230吸收热量,且可以包括流体(例如液体)引导通道和类似于如在图7(F)中显示的和关于其所描述的相关的热交换器/泵。In one embodiment, referring to FIG. 7(G), the
在一实施例中,参考图7(H),阵列200可以位于流体限制结构236处或附近,该流体限制结构236配置成保持流体238与阵列200的主体接触以便于通过流体进行散热。在一实施例中,流体238可以是液体,例如水。在一实施例中,流体限制结构236提供在它和阵列200的主体之间的密封。在一实施例中,该密封可以是例如通过气流或毛细作用力所提供的无接触密封。在一实施例中,类似于如关于流体引导通道222所讨论的,流体238被循环以促进散热。可以通过流体供给装置240提供流体238。In one embodiment, referring to FIG. 7(H), the
在一实施例中,参考图7(H),阵列200可以位于流体供给装置240处或附近,该流体供给装置240配置成朝向阵列200的主体投射流体238,以便于通过流体进行散热。在一实施例中,流体238是气体,例如清洁的干燥气体,N2、惰性气体等。虽然流体限制结构236和流体供给装置240在图7(H)中显示在一起,但是它们不必设置在一起。In one embodiment, referring to FIG. 7(H), the
在一实施例中,阵列200的主体是大致实心的结构,且具有例如用于流体引导通道222的腔。在一实施例中,阵列200的主体是大部分敞开的大致框架状结构,且各种部件(例如独立可寻址元件102、流体引导通道222等)连接至该大致框架状结构。这一敞开状的结构便于气体流动和/或增加表面积。在一实施例中,阵列200的主体是具有多个进入或通过所述主体的腔的大致实心结构,以便于气体流动和/或增加表面积。In an embodiment, the body of the
虽然在上文描述了提供冷却的实施例,但是实施例可替代或另外可以提供加热。Although embodiments are described above that provide cooling, embodiments may alternatively or additionally provide heating.
在一实施例中,在曝光使用期间阵列200期望保持在大致恒定的稳态温度。因此,例如阵列200中的所有或许多独立可寻址元件102可以在曝光之前被通电以达到期望的稳态温度或在其附近,且在曝光期间任意一个或更多的温度控制布置可以用于冷却和/或加热阵列200,以保持稳态温度。在一实施例中,任意一个或更多的温度控制布置可以用于在曝光之前加热阵列200,以达到期望的稳态温度或在其附近。之后,在曝光期间,任意一个或更多的温度控制布置可以用于冷却和/或加热阵列200,以保持稳态温度。来自传感器234的测量结果可以以前馈和/或反馈的方式使用,以保持稳态温度。在一实施例中,多个阵列200中的每一个可以具有相同的稳态温度,或多个阵列200中的一个或更多的阵列200可以具有不同于多个阵列200中的一个或更多的其它的阵列200的稳态温度。在一实施例中,阵列200被加热至比期望的稳态温度高的温度,且之后由于任意一个或更多的温度控制布置所施加的冷却和/或因为独立可寻址元件102的使用不足以保持比期望的稳态温度高的温度而在曝光期间温度降低。In one embodiment,
在一实施例中,为了改善热控制和整体冷却,阵列200的主体的数量被沿着和/或跨经曝光区域增加。因此,例如替代图5中显示的四个阵列200,可以设置5个、6个、7个、8个、9个、10个或更多的阵列200。可以设置更少的阵列,例如一个阵列200,诸如覆盖衬底的全部宽度的单个大阵列。In one embodiment, the number of bodies of
在一实施例中,如在此处描述的透镜阵列与可移动的独立可寻址元件是相关联的或是一体的。例如,透镜阵列板可以连接至每个可移动阵列200,且因此与独立可寻址元件102是可一起移动的(例如可旋转的)。如上文所述,透镜阵列板可以是相对于独立可寻址元件102(例如沿着Z方向)是可移位的。在一实施例中,可以为阵列200设置多个透镜阵列板,每一透镜阵列板与多个独立可寻址元件102的不同的子组相关联。In one embodiment, a lens array as described herein is associated or integral with movable individually addressable elements. For example, a lens array plate may be attached to each
在一实施例中,参考图7(I),单个分立的透镜242可以连接在每个独立可寻址元件102的前面,且102是可与独立可寻址元件移动的(例如围绕轴线A是可旋转的)。另外,通过使用致动器244,透镜242可以是相对于独立可寻址元件102(例如沿着Z方向)是可移位的。在一实施例中,参考图7(J),独立可寻址元件102和透镜242可以通过致动器244相对于阵列200的主体246一起被移位。在一实施例中,致动器244配置成(即相对于独立可寻址元件102或与独立可寻址元件102一起)沿着Z方向仅使透镜242移位。In one embodiment, referring to FIG. 7(I), a single
在一实施例中,致动器244配置成在高达3个自由度上(Z方向、围绕X方向的旋转和/或围绕Y方向的旋转)将透镜242移位。在一实施例中,致动器244配置成在高达6个自由度上将透镜242移位。在透镜242相对于其独立可寻址元件102可移动时,可以通过致动器244移动透镜242以改变透镜242相对于衬底的聚焦位置。在透镜242与其独立可寻址元件102一起移动时,透镜242的聚焦位置是大致恒定的,但是相对于衬底被移位。在一实施例中,透镜242的移动对于与阵列200中的每个独立可寻址元件102相关的每一透镜242被独立控制。在一实施例中,多个透镜242的子组相对于它们的多个独立可寻址元件102的相关子组一起移动,或与它们一起移动。在后一情形下,为了较低的数据管理费用和/或较快的响应,可能是以牺牲精细的聚焦控制为代价的。在一实施例中,由独立可寻址元件102所提供的辐射斑的尺寸可以通过离焦进行调整,即离焦越大,辐射斑的尺寸越大。In an embodiment, the
在一实施例中,参考图7(K),在其中具有孔阑的孔阑结构248可以位于透镜242的下面。在一实施例中,孔阑结构248可以位于在透镜242上方,且在透镜242和相关的独立可寻址元件102之间。孔阑结构248可能限制了透镜242、相关的独立可寻址元件102和/或相邻的透镜242/独立可寻址元件102的衍射效应。In one embodiment, referring to FIG. 7(K), an
在一实施例中,独立可寻址元件102可以是发射辐射器件,例如激光二极管。这样的发射辐射器件可以具有高的空间相干性且因此可能显示出散斑问题。为了避免这样的散斑问题,应当通过移动一束部分相对于另一束部分的相位来扰乱由发射辐射器件发射的辐射。在一实施例中,参考图7(L)和7(M),板250可以位于例如框架160上,且独立可寻址元件102相对于板250移动。在独立可寻址元件102相对于板250且在板250上移动时,板250引起了由独立可寻址元件102朝向衬底发射的辐射的空间相干性的破坏。在一实施例中,在独立可寻址元件102相对于板250和在板250上移动时,板250位于透镜242和其相关的独立可寻址元件102之间。在一实施例中,板250可以位于透镜242和衬底之间。In an embodiment, the individually
在一实施例中,参考图7(N),空间相干性破坏装置252可以位于衬底和至少独立可寻址元件102之间,该独立可寻址元件102将辐射投影到曝光区域上。在一实施例中,空间相干性破坏装置252位于独立可寻址元件102和透镜242之间,且可以连接至主体246。在一实施例中,空间相干性破坏装置252是相位调制器、振动板或旋转板。在独立可寻址元件102将辐射朝向衬底投影时,空间相干性破坏装置252使得破坏由独立可寻址元件102发射的辐射的空间相干性。In an embodiment, referring to FIG. 7(N), a spatial
在一实施例中,透镜阵列(不论是否是一起作为一个单元或作为独立的透镜)(期望地经由高热导率材料)连接至阵列200,以便于在可以提供更加有利的冷却情况下,将热量从透镜阵列传导至阵列200。In one embodiment, an array of lenses (whether together as a unit or as individual lenses) is connected (desirably via a high thermal conductivity material) to the
在一实施例中,阵列200可以包括一个或更多的聚焦或水平传感器254,如同水平传感器150。例如,传感器254可以配置成测量阵列200中的每一个独立可寻址元件102或阵列200的多个独立可寻址元件102的聚焦。因此,如果检测到离焦状态,那么可以对于阵列200中的每个独立可寻址元件102或对于阵列200中的多个独立可寻址元件102来校正聚焦。聚焦可以通过例如沿着Z方向(和/或围绕X轴线和/或围绕Y轴线)移动透镜242来进行校正。In an embodiment,
在一实施例中,传感器254与独立可寻址元件102是一体的(或可以与阵列200中的多个独立可寻址元件102是一体的)。参考图7(O),示意性地显示示例性的传感器254。聚焦检测束256被改向(例如反射)远离衬底表面,穿过透镜242,且被半镀银反射镜258引导朝向检测器262。在一实施例中,聚焦检测束256可以是用于曝光的辐射,该辐射刚好是从衬底被改向的。在一实施例中,聚焦检测束256可以是在衬底处被引导的专门的束,其在被衬底改向时变成束256。在束256撞击到检测器262上之前,刀边缘260(其可以是孔阑)位于束256的路径中。在这一例子中,检测器262包括通过分开检测器262在图7(O)中显示的至少两个辐射敏感部分(例如区域或检测器)。在衬底处于正焦位置时,在边缘260处形成清晰图像,因此检测器262的辐射敏感部分接收相等量的辐射。在衬底处于离焦状态时,束256移位,图像将形成在边缘260的前面或后面。因此,边缘260将截取束256的特定部分,检测器262的一个辐射敏感部分将接收比检测器262的另一辐射敏感部分更小量的辐射。来自检测器262的辐射敏感部分的输出信号的比较使得能够得到被改向的束256与所期望的位置不同的量、被改向的束256与所期望的位置不同时所处的方向、以及被改向的束256与所期望的位置不同时所离开的衬底的平面。信号可以被电子处理以提供控制信号,例如通过该控制信号可以对透镜242进行调整。反射镜258、边缘260和检测器262可以安装至阵列200。在一实施例中,检测器262可以是四象限光电单元。In one embodiment, the
在一实施例中,可以提供400个独立可寻址元件102,且(在任一时刻)133个进行工作。在一实施例中,可以设置有600-1200个工作的独立可寻址元件102,且可选地具有额外的独立可寻址元件102,例如用作预留和/或用于校正曝光(如例如上文所述的)。工作的独立可寻址元件102的数量可能例如依赖于抗蚀剂,其需要用于形成图案的辐射的特定剂量。在独立可寻址元件102是可旋转的(如独立可寻址元件102)情况下,独立可寻址元件102可以在6Hz的频率进行旋转,且具有1200个工作的独立可寻址元件102。如果具有较少的独立可寻址元件102,则可以在较高的频率下旋转独立可寻址元件102;如果具有更多的独立可寻址元件102,可以以较低的频率旋转独立可寻址元件102。In one embodiment, 400 individually
在一实施例中,与独立可寻址元件102的阵列相比,可以使用可移动的独立可寻址元件102减小独立可寻址元件102的数量。例如,可以(在任一时刻)提供600-1200个工作的独立可寻址元件102。另外,减小的数量可以产生基本上与独立可寻址元件102的阵列相类似的结果,但是具有一个或更多的优点。例如,对于使用紫蓝二极管阵列的充分的曝光能力,可能需要100000个紫蓝二极管的阵列,例如布置成200个二极管×500个二极管。在以10kHz的频率操作时,每个激光二极管的光功率将是0.33mW。每一激光二极管的电功率将是150mW=35mA×4.1V。因此,对于所述阵列,电功率将是15kW。在使用可移动的独立可寻址元件的实施例中,可以提供400个紫蓝二极管,其中133个进行工作。在9Mhz的频率下操作时,每一激光二极管的光功率将是250mW。每一激光二极管的电功率将是1000mW=240mA×4.2V。因此,对于所述阵列,电功率将是133W。因此,可移动的独立可寻址元件布置中的二极管可以在如例如在图7(P)中显示的光输出功率与前向电流关系曲线(240mA v.35mA)中的陡峭部分中进行操作,从而产生了每一二极管的高输出功率(250mW v.0.33mW),但是具有对于多个独立可寻址元件(133W v.15kW)的低电功率。因此,二极管可以更加有效地使用且导致减小的功率损耗和/或热量。In an embodiment, movable individually
因此,在一实施例中,二极管在功率/前向电流曲线的陡峭部分中进行操作。在功率/前向电流曲线的非陡峭部分中进行操作可能导致辐射的不相干性。在一实施例中,二极管在大于5mW的光功率下但是小于或等于20mW,或小于或等于30mW,或小于或等于40mW的情况下进行操作。在一实施例中,二极管没有在大于300mW的光功率下进行操作。在一实施例中,二极管被以单一的模式进行操作,而不是以多模式进行操作。Thus, in one embodiment, the diode operates in the steep portion of the power/forward current curve. Operating in the non-steep portion of the power/forward current curve may result in incoherence in radiation. In an embodiment, the diode operates at an optical power greater than 5 mW but less than or equal to 20 mW, or less than or equal to 30 mW, or less than or equal to 40 mW. In an embodiment, the diode is not operated at an optical power greater than 300 mW. In one embodiment, the diodes are operated in a single mode rather than in multiple modes.
阵列200上的独立可寻址元件102的数量可能依赖于,特别是依赖于(且如另外在上文所指出的程度)阵列200将要覆盖的曝光区域的长度、在曝光期间阵列移动的速度、斑的尺寸(即从独立可寻址元件102投影到衬底上的斑的横截面尺寸,例如宽度/直径)、每一独立可寻址元件应当提供的期望的强度(例如是否期望对于多于一个的独立可寻址元件上方的衬底上的斑展开期望的剂量,以避免对衬底或衬底上的抗蚀剂的损害)、衬底的期望的扫描速度、成本考虑、独立可寻址元件可以被接通(ON)或关断(OFF)的频率、以及对于冗余的独立可寻址元件102的期望(如之前讨论的;例如用于校正曝光或作为预留,例如如果一个或更多的独立可寻址元件故障)。在一实施例中,阵列200包括至少100个独立可寻址元件102,例如至少200个独立可寻址元件,至少400个独立可寻址元件,至少600个独立可寻址元件,至少1000个独立可寻址元件,至少1500个独立可寻址元件,至少2500个独立可寻址元件,或至少5000个独立可寻址元件。在一实施例中,阵列200包括小于50000个独立可寻址元件102,例如小于25000个独立可寻址元件,小于15000个独立可寻址元件,小于10000个独立可寻址元件,小于7500个独立可寻址元件,小于5000个独立可寻址元件,小于2500个独立可寻址元件,小于1200个独立可寻址元件,小于600个独立可寻址元件,或小于300个独立可寻址元件。The number of individually
在一实施例中,阵列200对于每10cm曝光区域长度(即,使得阵列中的独立可寻址元件的数量对于10cm的曝光区域长度进行标准化)包括:至少100个独立可寻址元件102,例如至少200个独立可寻址元件,至少400个独立可寻址元件,至少600个独立可寻址元件,至少1000个独立可寻址元件,至少1500个独立可寻址元件,至少2500个独立可寻址元件,或至少5000个独立可寻址元件。在一实施例中,阵列200对于每10cm曝光区域长度(即使得阵列中的独立可寻址元件的数量对于10cm的曝光区域长度进行标准化)包括:小于50000个独立可寻址元件102,例如小于25000个独立可寻址元件,小于15000个独立可寻址元件,小于10000个独立可寻址元件,小于7500个独立可寻址元件,小于5000个独立可寻址元件,小于2500个独立可寻址元件,小于1200个独立可寻址元件,小于600个独立可寻址元件,或小于300个独立可寻址元件。In one embodiment, the
在一实施例中,阵列200包括小于75%的冗余的独立可寻址元件102,例如67%或更少,50%或更少,约33%或更少,25%或更少,20%或更少,10%或更少,或5%或更少。在一实施例中,阵列200包括至少5%的冗余的独立可寻址元件102,例如至少10%,至少25%,至少33%,至少50%,或至少65%。在一实施例中,阵列包括约67%的冗余的独立可寻址元件。In one embodiment, the
在一实施例中,衬底上的独立可寻址元件的斑的尺寸是10微米或更少,5微米或更少,例如3微米或更少,2微米或更少,1微米或更少,0.5微米或更少,0.3微米或更少,或约0.1微米。在一实施例中,衬底上的独立可寻址元件的斑的尺寸是0.1微米或更大,0.2微米或更大,0.3微米或更大,0.5微米或更大,0.7微米或更大,1微米或更大,1.5微米或更大,2微米或更大,或5微米或更大。在一实施例中,斑的尺寸是约0.1微米。在一实施例中,斑的尺寸是约0.5微米。在一实施例中,斑的尺寸是约1微米。In one embodiment, the spot size of the individually addressable elements on the substrate is 10 microns or less, 5 microns or less, such as 3 microns or less, 2 microns or less, 1 micron or less , 0.5 microns or less, 0.3 microns or less, or about 0.1 microns. In one embodiment, the spot size of the individually addressable elements on the substrate is 0.1 micron or larger, 0.2 micron or larger, 0.3 micron or larger, 0.5 micron or larger, 0.7 micron or larger, 1 micron or greater, 1.5 microns or greater, 2 microns or greater, or 5 microns or greater. In one embodiment, the spot size is about 0.1 microns. In one embodiment, the spot size is about 0.5 microns. In one embodiment, the spot size is about 1 micron.
在操作光刻设备100时,衬底114被使用例如机器人输送器(未显示)装载到衬底台106上。之后衬底114在框架160和独立可寻址元件102的下面沿着X方向移位。衬底114通过水平传感器和/或对准传感器150进行测量,且之后使用独立可寻址元件102将衬底以图案曝光,如上文所述。独立可寻址元件102可以被操作,例如提供如此处所讨论的像素-栅格成像。In operating the
图8显示根据本发明的一个实施例的光刻设备的示意侧视图。如图8所示,光刻设备100包括图案形成装置104和投影系统108。投影系统108包括两个透镜176、172。第一透镜176被布置成接收来自图案形成装置104的经过调制的辐射束110,且聚焦它通过孔径光阑174中的对比度孔阑。另外的透镜(未显示)可以位于孔阑中。之后辐射束110发散,且被第二透镜172(例如场透镜)聚焦。Figure 8 shows a schematic side view of a lithographic apparatus according to one embodiment of the invention. As shown in FIG. 8 ,
投影系统108还包括布置成接收经过调制的辐射束110的透镜阵列170。与图案形成装置104中的一个或更多的独立可控元件相对应的经过调制的辐射束110的不同部分穿过透镜阵列170中的各自不同的透镜。每一透镜将经过调制的辐射束110的各自部分聚焦至位于衬底114上的点上。这样,辐射斑S(参见图12)的阵列被曝光至衬底114上。应当理解,虽然仅显示出所示出的透镜阵列170中的5个透镜,但是透镜阵列可以包括数百个或数千个透镜(这同样适用于用作图案形成装置104的独立可控元件)。The
如图8所示,在衬底114和透镜阵列170之间设置自由工作距离FWD。这一距离允许衬底114和/或透镜阵列170移动,从而允许例如聚焦校正。在一实施例中,自由工作距离在1-3mm的范围内,例如约1.4mm。图案形成装置104的独立可寻址元件布置在节距P处,其导致在衬底114处的成像斑的相关节距P。在一实施例中,透镜阵列170可以提供0.15或0.18的NA。在一实施例中,成像斑的尺寸是约1.6μm。As shown in FIG. 8 , a free working distance FWD is provided between the
在这一实施例中,投影系统108可以是1∶1投影系统,其中衬底114上的图像斑的阵列间距与图案形成装置104的像素的阵列间距是相同的。为了提供改善的分辨率,图像斑可以远小于图案形成装置104的像素。In this embodiment,
图9显示出根据本发明的实施例的光刻设备的示意侧视图。在这一实施例中,除了透镜阵列170之外,在图案形成装置104和衬底114之间没有光学装置。Fig. 9 shows a schematic side view of a lithographic apparatus according to an embodiment of the invention. In this embodiment, there is no optical device between the
图9中的光刻设备100包括图案形成装置104和投影系统108。在这种情形下,投影系统108仅包括布置成接收经过调制的辐射束110的透镜阵列170。与图案形成装置104中的一个或更多的独立可控元件相对应的调制辐射束110的不同部分穿过透镜阵列170中的各自的不同的透镜。每一透镜将经过调制的辐射束110的各自的部分聚焦到位于衬底114上的点上。这样,辐射斑S(参见图12)的阵列被曝光至衬底114上。应当理解,虽然仅显示出所显示的透镜阵列170中的5个透镜,但是透镜阵列可以包括数百或数千个透镜(这同样适用于用作图案形成装置104的独立可控元件)。The
如同在图8中示出的那样,在衬底114和透镜阵列170之间设置了自由工作距离FWD。这一距离允许衬底114和/或透镜阵列170移动,以允许例如进行聚焦校正。图案形成装置104的独立可寻址元件布置在节距P处,其导致了在衬底114处的成像斑的相关节距P。在一实施例中,透镜阵列170可以提供0.15的NA。在一实施例中,成像斑的尺寸是约1.6μm。As shown in FIG. 8 , a free working distance FWD is provided between the
图10显示使用关于图5在上文描述的可移动的独立可寻址元件102的根据本发明实施例的光刻设备的示意侧视图。在这一实施例中,除了透镜阵列170之外,在图案形成装置104和衬底114之间没有其它光学装置。FIG. 10 shows a schematic side view of a lithographic apparatus according to an embodiment of the invention using the movable individually
图10中的光刻设备100包括图案形成装置104和投影系统108。在这种情形下,投影系统108仅包括布置成接收经过调制的辐射束110的透镜阵列170。与在图案形成装置104中的一个或更多的独立可控元件相对应的调制辐射束110的不同部分穿过透镜阵列170中的各自的不同的透镜。每一透镜将经过调制的辐射束110的各自的部分聚焦到位于衬底114上的点上。这样,辐射斑S(参见图12)的阵列被曝光至衬底114上。应当理解,虽然仅显示出所示的透镜阵列170中的5个透镜,但是透镜阵列可以包括数百或数千个透镜(这同样适用于用作图案形成装置104的独立可控元件)。The
如同在图8中示出的那样,在衬底114和透镜阵列170之间设置了自由工作距离FWD。这一距离允许衬底114和/或透镜阵列170移动,以允许例如进行聚焦校正。图案形成装置104的独立可寻址元件布置在节距P处,其导致了在衬底114处的成像斑的相关节距P。在一实施例中,透镜阵列170可以提供0.15的NA。在一实施例中,成像斑的尺寸是约1.6μm。As shown in FIG. 8 , a free working distance FWD is provided between the
图11显示多个独立可寻址元件102,具体地是6个独立可寻址元件102。在这一实施例中,每个独立可寻址元件102是发射辐射二极管,例如蓝紫激光二极管。每一发射辐射二极管桥接两条电线,以将电流供给至发射辐射二极管以控制二极管。因此,二极管形成可寻址栅格。两条电线之间的宽度是约250μm,发射辐射二极管具有约500μm的节距。FIG. 11 shows a plurality of individually
图12示意性地显示衬底114上的图案可以如何产生。实心圆圈表示通过投影系统108中的透镜阵列MLA投影到衬底114上的斑S的阵列。当在衬底上进行一系列曝光时,衬底114被相对于投影系统108在X方向上移动。空心圆圈表示之前已经在衬底上被曝光的斑曝光SE。如图所示,通过投影系统108中的透镜阵列170投影到衬底114上的每一斑在衬底114上曝光一排R的斑。通过被每一斑S曝光的所有排R的斑曝光SE的总和产生衬底114的完整的图案。这样的布置通常称为“像素-栅格成像”。应当理解,图12是示意性的附图且斑S在实际中可能重叠。Figure 12 shows schematically how a pattern on a
可见,辐射斑S的阵列被以相对于衬底114的角度α布置(衬底114的边缘位于平行于X和Y方向)。这被完成使得在衬底114被沿着扫描方向(X方向)移动时,每一辐射斑将通过衬底的不同的区域,从而允许整个衬底被辐射斑S的阵列覆盖。在一实施例中,角度α是至多20°,10°,例如至多5°,至多3°,至多1°,至多0.5°,至多0.25°,至多0.10°,至多0.05°,或至多0.01°。在一实施例中,角度α是至少0.0001°,例如至少0.001°。根据在垂直于扫描方向的方向上的阵列间距和图像斑尺寸确定在扫描方向上的阵列的宽度和倾斜角α,用于确保衬底114的整个表面积被寻址。It can be seen that the array of radiation spots S is arranged at an angle α relative to the substrate 114 (the edges of the
图13示意性地显示如何可以通过使用多个光学引擎在单个扫描中曝光整个衬底114,每个光学引擎包括一个或更多的独立可寻址元件。通过8个光学引擎来产生辐射斑S(未显示)的8个阵列SA,该8个光学引擎布置成在“棋盘板”上的两个排R1、R2,或交错配置,使得辐射斑S的一个阵列的边缘与辐射斑S的相邻阵列的边缘略微重叠。在一实施例中,光学引擎布置成至少3个排,例如4个排或5个排。这样,辐射带延伸跨过衬底W的宽度,从而允许在单一扫描中执行对整个衬底的曝光。这样的“全宽度”单次通过曝光帮助避免连接两次或更多次通过过程的可能的缝合问题,且还可以减小机器印迹,因为衬底可能不需要在横向于衬底通过方向的方向上被移动。应当理解,可以使用任何适合数量的光学引擎。在一实施例中,光学引擎的数量是至少1,例如至少2,至少4,至少8,至少10,至少12,至少14,或至少17。在一实施例中,光学引擎的数量是小于40,例如小于30或小于20。每一光学引擎可以包括分立的图案形成装置104和可选的如上文所述的分立的投影系统108和/或辐射系统。然而应当理解,两个或更多的光学引擎可能共有一个或更多的辐射系统、图案形成装置104、和/或投影系统108中的至少一部分。Figure 13 schematically shows how an
在此处描述的实施例中,提供用于控制独立可寻址元件的控制器。例如,在独立可寻址元件是发射辐射器件的例子中,控制器可以控制何时独立可寻址元件被接通(ON)或关断(OFF),和获得对独立可寻址元件的高频调制。控制器可以控制由一个或更多的独立可寻址元件发射的辐射的功率。控制器可以调制通过一个或更多的独立可寻址元件发射的辐射的强度。控制器可以控制/调整在独立可寻址元件的阵列的所有或一部分上的强度均匀性。控制器可以调整独立可寻址元件的辐射输出,以对成像误差(例如集光率和光学像差(例如彗差、象散等))进行校正。In embodiments described herein, a controller for controlling individually addressable elements is provided. For example, in the case where the individually addressable elements are radiation emitting devices, the controller can control when the individually addressable elements are turned on (ON) or turned off (OFF), and obtain high frequency modulation. A controller may control the power of radiation emitted by one or more individually addressable elements. A controller may modulate the intensity of radiation emitted by one or more individually addressable elements. The controller can control/adjust intensity uniformity over all or a portion of the array of individually addressable elements. The controller can adjust the radiation output of the individually addressable elements to correct for imaging errors such as etendue and optical aberrations (eg coma, astigmatism, etc.).
在光刻术中,可以通过选择性地将衬底上的抗蚀剂层以辐射曝光(例如通过以图案化的辐射曝光抗蚀剂层),而在衬底上产生期望的特征。接收特定的最小辐射剂量(“剂量阈值”)的抗蚀剂区域经历化学反应,而其它区域保持不变。由此产生的抗蚀剂层中的化学差别允许对抗蚀剂显影,即选择性移除已经接收至少最小剂量的区域或移除没有接收最小剂量的区域。结果,一部分衬底仍然被抗蚀剂保护,而移除了抗蚀剂的衬底的区域被曝光,从而允许例如额外的处理步骤,例如选择性蚀刻衬底、选择性金属沉积等,由此产生期望的特征。可以通过在图案形成装置中设定独立可控元件来实现辐射的图案化,使得被传输至位于期望的特征内的衬底上的抗蚀剂层区域的辐射处于足够高的强度,使得所述区域在曝光期间接收大于剂量阈值的辐射剂量,而衬底上的其它区域通过设定对应的独立可控元件来接收低于剂量阈值的辐射剂量,以提供零或显著地较低的辐射强度。In photolithography, desired features can be produced on a substrate by selectively exposing a resist layer on the substrate to radiation, for example by exposing the resist layer to patterned radiation. Areas of the resist that receive a certain minimum radiation dose ("dose threshold") undergo a chemical reaction, while other areas remain unchanged. The resulting chemical differences in the resist layer allow development of the resist, ie selective removal of areas that have received at least a minimum dose or removal of areas that have not received a minimum dose. As a result, a portion of the substrate remains protected by the resist, while regions of the substrate from which the resist has been removed are exposed, allowing for example additional processing steps such as selective etching of the substrate, selective metal deposition, etc., whereby produce the desired characteristics. Patterning of the radiation can be achieved by setting independently controllable elements in the patterning device such that the radiation delivered to regions of the resist layer on the substrate within the desired features is at a sufficiently high intensity that the Regions receive a radiation dose greater than the dose threshold during exposure, while other regions on the substrate receive a radiation dose below the dose threshold by setting corresponding individually controllable elements to provide zero or significantly lower radiation intensity.
在实际中,即使独立可控元件被设置成在特征边界的一侧上提供最大辐射强度和在另一侧上提供最小辐射强度,在期望的特征的边缘处的辐射剂量可能不会从给定的最大剂量急剧地变化至零剂量。替代地,由于衍射效应,辐射剂量的水平可能横跨经过过渡区降低。然后,在显影抗蚀剂之后最终形成的期望特征的边界的位置通过所接收的剂量降低至低于辐射剂量阈值的位置来确定。辐射剂量横跨经过过渡区而下降的分布以及由此特征边界的精确位置可以通过设定独立可控元件来更加精确地进行控制,该独立可控元件提供不仅是最大或最小强度水平而且也可以是在最大和最小强度水平之间的强度水平的辐射至衬底上位于特征边界上或附近的点上。这通常称为“灰度级”或“灰度水平”。In practice, the radiation dose at the edge of a desired feature may not vary from a given The maximum dose changes dramatically to zero dose. Alternatively, the level of radiation dose may decrease across the transition region due to diffraction effects. The location of the resulting boundary of the desired feature after developing the resist is then determined by the location at which the received dose drops below a radiation dose threshold. The distribution of the radiation dose drop across the transition region and thus the precise location of the feature boundary can be more precisely controlled by setting independently controllable elements providing not only maximum or minimum intensity levels but also is radiation at an intensity level between the maximum and minimum intensity levels to a point on the substrate that is on or near a feature boundary. This is often referred to as "grayscale" or "grayscale levels".
灰度级可以提供与在光刻系统中可行的相比,对特征边界的位置的更大的控制,其中通过给定的独立可控元件提供至衬底的辐射强度可以仅被设定成两个值(即仅是最大值和最小值)。在一实施例中,至少三个不同的辐射强度值可以被投影到衬底上,例如至少4个辐射强度值,至少8个辐射强度值,至少16个辐射强度值,至少32个辐射强度值,至少64个辐射强度值,至少100个辐射强度值,至少128个辐射强度值,或至少256个辐射强度值。如果图案形成装置自身是辐射源(例如发光二极管或激光二极管的阵列),那么可以实现灰度级,例如通过控制被传输的辐射的强度水平。如果对比度装置是微反射镜器件,可以实现灰度级,例如通过控制微反射镜的倾斜角度。另外,可以通过对对比度装置中的多个可编程元件进行分组且控制在给定时间被接通或关断的所述组内的元件的数量,来实现灰度级。Gray scale can provide greater control over the location of feature boundaries than is possible in lithographic systems where the intensity of radiation delivered to the substrate by a given independently controllable element can be set to only two values (that is, only the maximum and minimum values). In an embodiment, at least three different irradiance values may be projected onto the substrate, for example at least 4 irradiance values, at least 8 irradiance values, at least 16 irradiance values, at least 32 irradiance values , at least 64 radiation intensity values, at least 100 radiation intensity values, at least 128 radiation intensity values, or at least 256 radiation intensity values. If the patterning device is itself a radiation source (such as an array of light emitting diodes or laser diodes), gray scales can be achieved, for example by controlling the intensity level of the transmitted radiation. If the contrast device is a micromirror device, gray scales can be achieved, for example by controlling the tilt angle of the micromirrors. Additionally, grayscale can be achieved by grouping multiple programmable elements in the contrast device and controlling the number of elements within the group that are switched on or off at a given time.
在一个例子中,图案形成装置可以具有一系列的状态,包括:(a)黑状态,其中所提供的辐射对其对应像素的强度分布的贡献是最小的或甚至为零;(b)最白状态,其中所提供的辐射做出了最大的贡献;和(c)在前述两个状态之间的多个状态,其中所提供的辐射做出了中间的贡献。所述状态被分成正常组和补偿组,该正常组用于正常束图案化/印刷,该补偿组用于补偿缺陷元件的效应。正常组包括黑状态和第一组中间状态。该第一组将被描述成灰度状态,它们是可选的,以给对应像素强度提供从最小黑值直到特定的正常最大值的不断增加的贡献。补偿组包括剩下的第二组中间状态以及最白状态。该第二组中间状态将被描述成白状态,它们是可选的、以提供比正常最大值大的贡献,不断增加至对应于最白状态的真实最大值。虽然第二组中间状态被描述成白状态,但是应当理解:这仅是便于在正常和补偿曝光步骤之间进行区分。全部多个状态将可替代地描述成在黑和白之间的一灰度状态的序列,可选择地可以使得能够进行灰度级印刷。In one example, the patterning device can have a range of states including: (a) a black state where the contribution of the supplied radiation to the intensity distribution of its corresponding pixel is minimal or even zero; (b) the whitest A state in which the provided radiation makes the greatest contribution; and (c) states in between the preceding two states in which the provided radiation makes an intermediate contribution. The states are divided into a normal group for normal beam patterning/printing and a compensation group for compensating the effects of defective elements. The normal group includes the black state and the first group of intermediate states. This first group will be described as grayscale states, which are selectable to provide an increasing contribution to the corresponding pixel intensity from a minimum black value up to a certain normal maximum value. The compensation set includes the remaining second set of intermediate states and the whitest state. This second set of intermediate states will be described as white states, which are optional to provide a larger than normal maximum contribution, increasing up to the true maximum corresponding to the whitest state. Although the second set of intermediate states are described as white states, it should be understood that this is merely a convenience for distinguishing between normal and compensated exposure steps. All multiple states would alternatively be described as a sequence of grayscale states between black and white, optionally enabling grayscale printing.
应当理解,灰度级可以用于对于上文所述的来说额外的或可替代的目的。例如,在曝光之后的衬底的处理可以被调整,使得依赖于所接收的辐射剂量水平,具有衬底的区域的多于两个的潜在响应。例如,接收低于第一阈值的辐射剂量的衬底的一部分以第一方式响应;接收高于第一阈值但是低于第二阈值的辐射剂量的衬底的一部分以第二方式响应;和接收高于第二阈值的辐射剂量的衬底的一部分以第三方式响应。因此,灰度级可以用于提供经过衬底上的辐射剂量分布,其具有多于两个的期望的剂量水平。在一实施例中,辐射剂量分布具有至少2个期望的剂量水平,例如至少3个期望的辐射剂量水平,至少4个期望的辐射剂量水平、至少6个期望的辐射剂量水平或至少8个期望的辐射剂量水平。It should be understood that gray scale may be used for additional or alternative purposes to those described above. For example, the processing of the substrate after exposure can be tuned so that there are more than two potential responses of regions of the substrate depending on the received radiation dose level. For example, a portion of the substrate receiving a radiation dose below a first threshold responds in a first manner; a portion of the substrate receiving a radiation dose above the first threshold but below a second threshold responds in a second manner; and receiving A portion of the substrate at a radiation dose above the second threshold responds in a third manner. Thus, grayscale can be used to provide a radiation dose distribution across the substrate with more than two desired dose levels. In an embodiment, the radiation dose profile has at least 2 desired dose levels, such as at least 3 desired radiation dose levels, at least 4 desired radiation dose levels, at least 6 desired radiation dose levels or at least 8 desired radiation dose levels.
还应当理解,可以通过除了仅控制在衬底上的每一点处接收的辐射的强度之外的方法来控制辐射剂量分布,如上文所述。例如,可替代地或另外地,可以通过控制所述点的曝光的持续时间来控制由衬底上的每一点所接收的辐射剂量。作为另一例子,衬底上的每一点可以潜在地接收多个连续的曝光中的辐射。因此,由每一点所接收的辐射剂量可以可替代地或另外地通过使用所述多个连续曝光中的已选择的子组曝光所述点来进行控制。It should also be understood that the radiation dose distribution may be controlled by methods other than merely controlling the intensity of radiation received at each point on the substrate, as described above. For example, the radiation dose received by each point on the substrate may alternatively or additionally be controlled by controlling the duration of exposure of that point. As another example, each point on the substrate may potentially receive radiation in multiple consecutive exposures. Thus, the radiation dose received by each point may alternatively or additionally be controlled by exposing the point using a selected subset of the plurality of consecutive exposures.
为了在衬底上形成图案,需要在曝光过程期间在每一阶段将图案形成装置中的每一独立可控元件设定成所需要的状态。因此,表示所需要的状态的控制信号必须被传输至每一独立可控元件。期望地,光刻设备包括产生控制信号的控制器400。将在衬底上形成的图案可以以矢量定义的格式(例如GDSII)提供至光刻设备。为了将设计信息转换成每一独立可控元件的控制信号,控制器包括一个或更多的数据操作装置,每一个配置成在表示图案的数据流上执行处理步骤。数据操作装置可以统称为“数据通路(datapath)”。To form a pattern on a substrate, each individually controllable element in the patterning device needs to be set to a desired state at each stage during the exposure process. Therefore, a control signal representing the desired state must be transmitted to each individually controllable element. Desirably, the lithographic apparatus includes a
数据通路中的数据操作装置可以配置成执行下述功能中的一个或更多个:将基于矢量的设计信息转换成位图图案数据;将位图图案数据转换成需要的辐射剂量图(即在整个衬底上的所需要的辐射剂量分布);将需要的辐射剂量图转换成每一独立可控元件的所需辐射强度值;以及将每一独立可控元件的需要的辐射强度值转换成对应的控制信号。The data manipulation device in the data path may be configured to perform one or more of the following functions: converting vector-based design information into bitmap pattern data; converting bitmap pattern data into required radiation dose maps (i.e. in required radiation dose distribution over the entire substrate); converting the required radiation dose map into required radiation intensity values for each individually controllable element; and converting the required radiation intensity values for each individually controllable element into corresponding control signal.
在一实施例中,控制信号可以通过有线通信或无线通信供给至独立可控元件102和/或一个或更多的其它装置(例如传感器)。另外,来自独立可控元件102和/或来自一个或更多的其它装置(例如传感器)的信号可以通信至控制器400。In one embodiment, the control signals may be supplied to the individually
参考图14(A),在无线的实施例中,收发器(或仅是发射器)406发射包含由收发器(或仅是接收器)402接收的控制信号的信号。通过一个或更多的线404将控制信号发送至各自的独立可控元件102。在一实施例中,来自收发器406的信号可以包括多个控制信号,收发器402可以将所述信号多路分解成为各自的独立可控元件102和/或一个或更多的其它装置(例如传感器)的多个控制信号。在一实施例中,无线传输可以是通过射频(RF)来进行。Referring to FIG. 14(A), in a wireless embodiment, the transceiver (or just the transmitter) 406 transmits signals containing the control signals received by the transceiver (or just the receiver) 402 . Control signals are sent to respective individually
参考图14(B),在有线的实施例中,一个或更多的线404可以将控制器400连接至独立可控元件102和/或一个或更多的其它装置(例如传感器)。在一实施例中,可以提供单条线404,以将每个控制信号传送至阵列200的主体和/或从阵列200的主体传送每一控制信号。在阵列200的主体处,控制信号之后可以单独地提供至独立可控元件102和/或一个或更多的其它装置(例如传感器)。例如,类似于无线的例子,为了在单条线上传输可以对控制信号进行多路传输,且之后为了提供至独立可控元件102和/或一个或更多的其它装置(例如传感器)可以对其进行多路分解。在一实施例中,可以提供多条线404,以传送独立可控元件102和/或一个或更多的其它装置(例如传感器)的各自的控制信号。在阵列200可旋转的实施例中,可以沿着旋转轴线A提供线404。在一实施例中,通过在电机216处或在电机216周围的滑动接触可以将信号提供至阵列200的主体,或从阵列200的主体提供信号。这对于可旋转的实施例可能是有利的。滑动接触可以是例如通过与板接触的刷。Referring to FIG. 14(B), in a wired embodiment, one or
在一实施例中,线404可以是光学线。在这种情形中,信号可以是光学信号,其中例如可以以不同的波长传送不同的控制信号。In an embodiment,
以类似于控制信号的方式,可以通过有线的或无线的方式将功率供给至独立可控元件102或一个或更多的其它装置(例如传感器)。例如,在有线的实施例中,可以通过一个或更多的线404供给功率,而不管是否与传送信号的线是相同的、还是不同的。如上所述,可以设置滑动接触布置以传输功率。在无线的实施例中,可以通过RF耦合传递功率。In a manner similar to the control signals, power may be supplied to the individually
虽然之前的讨论集中在被供给至独立可控元件102和/或一个或更多的其它装置(例如传感器)的控制信号,但是应当理解它们还包括,另外地或可替代地通过适合的配置将信号从独立可控元件102和/或一个或更多的其它装置(例如传感器)传输至控制器400。因此,通信可以是单向的(例如仅到达或来自独立可控元件102和/或一个或更多的其它装置(例如传感器))或两向的(即,到达和来自独立可控元件102和/或一个或更多的其它装置(例如传感器))。例如,收发器402可以为了传输至收发器406而将来自独立可控元件102和/或一个或更多的其它装置(例如传感器)的多个信号进行多路传输,此时它可以被多路分解成独立的信号。While the previous discussion has focused on the control signals supplied to the individually
在一实施例中,考虑到可能影响衬底上的图案的正确供给和/或实现的因素,可以改变提供图案的控制信号。例如,考虑了对一个或更多的阵列200的加热,可以将校正施加至控制信号。这样的加热可能引起独立可控元件102的改变的指向方向、来自独立可控元件102的辐射的均匀性的变化等。在一实施例中,来自例如传感器234的与(例如一个或更多的独立可控元件102的)阵列200相关的测量的温度和/或膨胀/收缩可以用于改变控制信号,否则将已经提供该控制信号以形成图案。因此,例如在曝光期间,独立可控元件102的温度可能变化,该变化引起了将在单个恒定的温度提供的所投影的图案的变化。因此,考虑到这样的变化,可以改变控制信号。类似地,在一实施例中,来自对准传感器和/或水平传感器150的结果可以用于改变通过独立可控元件102提供的图案。可以改变该图案以校正例如变形,该变形可能由例如独立可控元件102和衬底114之间的光学装置(如果有的话)、衬底114的定位的不规则性、衬底114的不平整度等引起。In an embodiment, the control signal providing the pattern may be changed to take into account factors that may affect the correct provision and/or realization of the pattern on the substrate. For example, corrections may be applied to the control signals to account for heating of one or more of the
在一实施例中,基于由所测量的参数(例如测量的温度、通过水平传感器测量的距离等)引起的期望图案上的物理/光学结果的理论,可以确定控制信号的变化。在一实施例中,可以基于由所测量的参数引起的在期望图案上的物理/光学结果的试验或经验模型,确定控制信号的变化。在一实施例中,可以以前馈和/或反馈的方式施加控制信号的变化。In an embodiment, the change in the control signal may be determined based on a theory of physical/optical consequences on the desired pattern caused by measured parameters (eg, measured temperature, distance measured by a level sensor, etc.). In an embodiment, the change in the control signal may be determined based on an experimental or empirical model of the physical/optical consequences on the desired pattern caused by the measured parameters. In an embodiment, changes in the control signal may be applied in a feed-forward and/or feedback manner.
在一实施例中,光刻设备可以包括测量辐射的特性的传感器500,该辐射被或将被通过一个或更多的独立可控元件102朝向衬底进行传输。这样的传感器可以是斑传感器或透射图像传感器。传感器可以用于例如确定来自独立可控元件102的辐射的强度、来自独立可控元件102的辐射的均匀性、来自独立可控元件102的辐射斑的横截面尺寸或面积、和/或来自独立可控元件102的辐射斑(在X-Y平面内)的位置。In an embodiment, a lithographic apparatus may include a
图15显示根据本发明的实施例的光刻设备的示意俯视图,显示出传感器500的一些示例性的位置。在一实施例中,一个或更多的传感器500设置在保持衬底114的衬底台106中或衬底台106上。例如,传感器500可以设置在衬底台106的前边缘和/或衬底台106的尾边缘。在这一例子中,显示出四个传感器500,对于每一阵列200对应一个传感器。期望它们位于将不会被衬底116覆盖的位置。在可替代的或另外的例子中,可以将传感器设置在衬底台106的侧边缘,期望地设置在将不会被衬底116覆盖的位置处。在衬底台106的前边缘处的传感器500可以用于独立可控元件102的预曝光的检测。在衬底台106的尾边缘处的传感器500可以用于独立可控元件102的后曝光的检测。在衬底台106的侧边缘处的传感器500可以用于独立可控元件102的在曝光期间的检测(“运行中的(on-the-fly)”检测)。Fig. 15 shows a schematic top view of a lithographic apparatus showing some exemplary positions of
参考图16(A),显示出根据本发明的实施例的光刻设备的一部分的示意侧视图。在这一例子中,仅显示出单个阵列200,且为了清楚起见省略了光刻设备的其它部分;此处描述的传感器可以施加至每一阵列200或一些阵列200。在图16(A)中显示出传感器500的位置的一些另外的或可替代的例子(除了衬底台106的传感器500之外)。第一例子是框架160上的传感器500,该传感器接收通过束改向结构502(例如反射式反射镜布置)的来自独立可控元件102的辐射。在该第一例子中,独立可控元件102在X-Y平面中移动,且因此独立可控元件102中的不同的独立可控元件可以被设置以提供辐射至束改向结构502。另外的或可替代的第二例子是在框架160上的传感器500,该传感器500接收来自独立可控元件102的背侧(即与提供曝光辐射相对的一侧)的来自独立可控元件102的辐射。在该第二例子中,独立可控元件102在X-Y平面中移动,且因此独立可控元件102中的不同的独立可控元件可以被设置以提供辐射至传感器500。虽然第二例子中的传感器500显示在曝光区域204处的独立可控元件102的路径中,传感器500可以位于显示传感器510的位置。在一实施例中,框架160上的传感器500位于固定的位置处或者另外可以通过例如相关的致动器是可移动的。除了或替代预曝光感测和/或后曝光感测,上文的第一和第二例子可以用于提供“运行中的”感测。第三例子是结构504、506上的传感器500。结构504、506可以是通过致动器508可移动的。在一实施例中,结构504位于衬底台将移动(如图16(A)所示)的路径的下面或在所述路径的侧面。在一实施例中,结构504可以是通过致动器508移动至在图16(A)中显示的衬底台106的传感器500所在的位置(如果衬底台106未在那里的话),如果结构504在路径的侧面,则这样的移动可以是沿着Z方向(如图16(A)所示)或沿着X和/或Y方向。在一实施例中,结构506位于衬底台将移动(如图16(A)所示)所在的路径的上方或在路径的侧面。在一实施例中,结构506可以通过致动器508移动至在图16(A)所显示的衬底台106的传感器500所在的位置(如果衬底台106不在那里的话)。结构506可以连接至框架160且相对于框架160是可移位的。Referring to FIG. 16(A), a schematic side view of a portion of a lithographic apparatus according to an embodiment of the present invention is shown. In this example, only a
在测量通过一个或更多的独立可控元件102朝向衬底传输或将要传输的辐射的特性的操作中,通过移动传感器500和/或移动独立可控元件102的辐射束,使得传感器500位于来自独立可控元件102的辐射的路径中。因此,作为例子,可以移动衬底台106,以将传感器500定位在来自图16(A)中显示的独立可控元件102的辐射的路径中。在这种情形中,传感器500被定位在曝光区域204处的独立可控元件102的路径中。在一实施例中,传感器500可以定位在曝光区域204外的独立可控元件102的路径中(例如在左手侧显示的独立可控元件102,如果束改向结构502不在那里的话)。如果位于辐射路径中,传感器500可以检测辐射且测量辐射的特性。为了便于感测,传感器500可以相对于独立可控元件102移动,和/或独立可控元件102可以相对于传感器500移动。In an operation to measure a characteristic of radiation transmitted or to be transmitted towards the substrate by one or more individually
作为另一例子,可以将独立可控元件102移动至一位置,使得来自独立可控元件102的辐射撞击到束改向结构502上。束改向结构502将束引导至框架160上的传感器500。为了便于感测,传感器500可以相对于独立可控元件102移动,和/或独立可控元件102可以相对于传感器500移动。在这一例子中,在曝光区域204外测量独立可控元件102。As another example, individually
在一实施例中,传感器500可以是固定的或移动的。如果是固定的话,独立可控元件102期望地相对于固定的传感器500是可移动的,以便于感测。例如,阵列200可以相对于传感器500(例如框架160上的传感器500)移动(例如旋转或平移),以便于通过传感器500进行感测。如果传感器500是可移动的(例如衬底台106上的传感器500),则独立可控元件102可以保持成静止的、用于感测,或另外被移动以例如加速感测。In an embodiment, the
传感器500可以用于校准一个或更多的独立可控元件102。例如,在曝光之前可以通过传感器500检测独立可控元件102的斑的位置,且相应地系统被校准。之后可以基于斑的这一预期位置调整曝光(例如控制衬底114的位置,控制独立可控元件102的位置,控制独立可控元件102的关断(OFF)或接通(ON)等)。另外,可以随后进行校准。例如,可以在曝光之后、在另一曝光之前,立即使用例如衬底台106的尾边缘上的传感器500进行校准。校准可以在每一曝光之前、在特定数量的曝光之后等情况下进行。另外,通过使用传感器500可以“在运行中”检测独立可控元件102的斑的位置,并相应地调整曝光。独立可控元件102也许能够基于“在运行中的”感测进行再次校准。
在一实施例中,一个或更多的独立可控元件102可以被编码以便能够检测哪一独立可控元件102位于特定的位置或被使用。在一实施例中,独立可控元件102可以具有标识,传感器510可以用于检测标识,该标识可以是RFID、条码等。例如,多个独立可控元件102中的每一个可以被移动至靠近传感器510,以读取标识。在知道哪一独立可控元件102靠近传感器510的情况下,可以知道哪一独立可控元件102靠近传感器500,哪一独立可控元件102在曝光区域204中等。在一实施例中,每一独立可控元件102可以用于提供具有不同频率的辐射,传感器500、510可以用于检测哪一独立可控元件102靠近传感器500、510。例如,多个独立可控元件102中的每一个可以被移动成靠近传感器500、510,以接收来自独立可控元件102的辐射,且之后传感器500、510可以多路分解所接收到的辐射,以确定哪一独立可控元件102在特定时间靠近传感器500、510。在知晓上述情况的情况下,可以知道哪一独立可控元件102靠近传感器500,哪一独立可控元件102位于曝光区域204中等。In one embodiment, one or more of the individually
在一实施例中,如上文所述,位置传感器可以被提供以确定一个或更多的独立可控元件102在高达6个自由度上的位置。例如,传感器510可以用于位置检测。在一实施例中,传感器510可以包括干涉仪。在一实施例中,传感器510可以包括编码器,该编码器可以用于检测一个或更多的一维编码器光栅和/或一个或更多的二维的编码器光栅。In one embodiment, position sensors may be provided to determine the position of one or more individually
在一实施例中,可以提供传感器520用于确定已经传输至衬底的辐射的特性。在这一实施例中,传感器520捕获被衬底改向的辐射。在示例的使用中,被传感器520捕获的被改向的辐射可以用于便于确定来自独立可控元件102的辐射的斑的位置(例如来自独立可控元件102的辐射的斑的错位)。具体地,传感器520可以捕获从衬底的刚被曝光的部分被改向的辐射,即潜像。对这一尾部改向的辐射的强度的测量,可以给出斑是否被适当地对准的指示。例如,对这一尾部的重复测量可以给出重复的信号,从该重复的信号的偏离将显示斑的错位(例如,异相的信号可能表示未对准)。图16(B)显示传感器520的检测区域相对于衬底114的曝光区域522的示意位置。在这一实施例中,显示出3个检测区域,其结果可以被比较和/或组合以便于识别错位。仅需要使用一个检测区域,例如在左手侧上的一个。在一实施例中,可以以与传感器520相类似的方式使用独立可控元件102的检测器262。例如,在右手侧上的阵列200的曝光区域204外的一个或更多的独立可控元件102可以用于检测从衬底上的潜像被改向的辐射。In an embodiment, a
图17显示光刻设备的一个实施例。在这一实施例中,多个独立可控元件102朝向可旋转的多边形件600引导辐射。辐射撞击到其上的多边形件600的表面604将辐射朝向透镜阵列170改向。透镜阵列170朝向衬底114引导辐射。在曝光期间,多边形件600围绕轴线602旋转,从而使得来自多个独立可控元件102中的每一个的各自的束沿着Y方向跨经透镜阵列170移动。具体地,在多边形件600的每一新的琢面与辐射撞击时,束将沿着正Y方向跨经透镜阵列170重复进行扫描。在曝光期间独立可控元件102被调制,以提供如此处讨论的期望的图案。多边形件可以具有任意数量的适合的边。另外,独立可控元件102在时序上被与旋转的多边形600调制,使得各自的束撞击到透镜阵列170中的透镜上。在一实施例中,另外的多个独立可控元件102可以设置在多边形件的相反侧上,即在右手侧上,以便使得辐射撞击到多边形件600的表面606上。Figure 17 shows one embodiment of a lithographic apparatus. In this embodiment, a plurality of individually
在一实施例中,可以使用振动的光学元件替代多边形件600。振动的光学元件具有相对于透镜阵列170的特定的固定角度,且可以沿着Y方向来回平移,以使得束沿着Y方向跨经透镜阵列170来回进行扫描。在一实施例中,可以使用围绕轴线602来回旋转通过一弧度的光学元件替代多边形件600。通过来回旋转光学元件通过一弧度,使得束沿着Y方向跨经透镜阵列170来回进行扫描。在一实施例中,多边形件600、振动的光学元件、和/或旋转的光学元件具有一个或更多的反射镜表面。在一实施例中,多边形件600、振动的光学元件、和/或旋转的光学元件包括棱镜。在一实施例中,可以使用声-光调制器替代多边形件600。声-光调制器可以用于跨经透镜阵列170扫描束。在一实施例中,可以将透镜阵列170放置在多个独立可控元件102与多边形件600、振动的光学元件、旋转的光学元件、和/或声-光调制器之间的辐射路径中。In one embodiment, a vibrating optical element may be used in place of
因此,通常,与被分成曝光区域的宽度的这些辐射输出的宽度相比,可以用更小的辐射输出来覆盖曝光区域(例如衬底)的宽度。在一实施例中,这可以包括相对于曝光区域来移动辐射束源或相对于曝光区域移动辐射束。Thus, in general, the width of the exposure area (eg the substrate) can be covered with less radiation output than the width of these radiation outputs divided into the width of the exposure area. In an embodiment, this may include moving the source of the radiation beam relative to the exposure area or moving the radiation beam relative to the exposure area.
图18显示根据本发明实施例的光刻设备的示意横截面侧视图,具有可移动的独立可控元件102。如图5中显示的光刻设备100一样,光刻设备100包括用于保持衬底的衬底台106,和在高达6个自由度上移动衬底台106的定位装置116。Figure 18 shows a schematic cross-sectional side view of a lithographic apparatus according to an embodiment of the invention, with movable individually
光刻设备100还包括布置在框架160上的多个独立可控元件102。在这一实施例中,每一独立可控元件102是发射辐射二极管,例如激光二极管,诸如蓝紫激光二极管。独立可控元件102布置成沿着Y方向延伸的独立可控元件102的阵列200。虽然显示出一个阵列200,但是光刻设备可以具有例如在图5中显示的多个阵列200。The
在这一实施例中,阵列200是可旋转的板,具有围绕板布置的多个空间上分立的独立可控元件102。在使用时,板围绕其自身的轴线206旋转,例如沿着由图5中的箭头显示的方向。使用电机216使阵列200的板围绕轴线206旋转。另外,阵列200的板可以通过电机216沿着Z方向移动,使得独立可控元件102可以相对于衬底台106移位。In this embodiment, the
在这一实施例中,阵列200可以具有一个或更多的散热片230,以增加散热表面积。散热片230可以例如在阵列200的顶表面上。可选地,可以提供一个或更多的另外的散热片232,以与散热片230配合、以便于散热。例如,散热片232能够从散热片230吸收热量,且可以包括流体(例如液体)引导通道以及类似于在图7(F)中显示的且相对于其描述的相关的热交换器/泵。In this embodiment,
在这一实施例中,透镜242可以位于每一独立可控元件102的前面,且可以与独立可控元件102一起移动(例如围绕轴线A是可旋转的)。在图18中,显示出两个透镜242且连接至阵列200。另外,透镜242可以相对于独立可控元件102(例如沿着Z方向)是可移位的。In this embodiment, a
在这一实施例中,其中具有孔阑的孔阑结构248可以位于透镜242的上方、在透镜242和相关的独立可控元件102之间。孔阑结构248可以限制透镜242、相关的独立可控元件102的衍射效应和/或相邻的透镜242/独立可控元件102的衍射效应。In this embodiment, the
在这一实施例中,传感器254可以设置有独立可寻址元件102(或阵列200中的多个独立可寻址元件102)。在这一实施例中,传感器254布置用于检测聚焦。聚焦检测束256被改向(例如反射)远离衬底表面,穿过透镜242,且被通过例如半镀银反射镜258朝向检测器262引导。在一实施例中,聚焦检测束256可以是用于曝光的辐射,该辐射刚好是从衬底被改向的。在一实施例中,聚焦检测束256可以是在衬底处被引导的专门的束,其在被衬底改向时变成束256。关于图7(O),在上文描述了示例性的聚焦传感器。反射镜258和检测器262可以安装至阵列200。In this embodiment, the
在这一实施例中,控制信号可以通过有线通信或无线通信供给至独立可控元件102和/或一个或更多的其它装置(例如传感器)。另外,来自独立可控元件102和/或来自一个或更多的其它装置(例如传感器)的信号可以通信至控制器。在图18中,可以沿着旋转轴线206设置线404。在一实施例中,线404可以是光学线。在所述情形中,所述信号可以是光学信号,其中例如以不同的波长传送不同的控制信号。以类似于控制信号的方式,可以通过有线或无线的方式将功率供给至独立可控元件102或一个或更多的其它装置(例如传感器)。例如在有线的实施例中,可以通过一个或更多的线404供给功率,而不管其与传送信号的线是相同的或不同的。在无线的实施例中,可以通过如在标记700处显示的RF耦合传递功率。In this embodiment, the control signals may be supplied to the individually
在这一实施例中,光刻设备可以包括测量辐射的特性的传感器500,该辐射被或将被通过一个或更多的独立可控元件102朝向衬底进行传输。这样的传感器可以是斑传感器或透射图像传感器。传感器可以用于例如确定来自独立可控元件102的辐射的强度、来自独立可控元件102的辐射的均匀性、来自独立可控元件102的辐射斑的横截面尺寸或面积、和/或来自独立可控元件102的辐射斑的位置(在X-Y平面内)。在这一实施例中,传感器500在框架160上,且可以邻近衬底台106或是通过衬底台106可访问的。In this embodiment, the lithographic apparatus may include a
在一实施例中,并非具有在X-Y平面内可移动的独立可控元件102,独立可控元件102在衬底的曝光期间在X-Y平面内是大致静止的。不必说,可控元件102在X-Y平面内可能是不可移动的。例如,它们可以在X-Y平面内是可移动的,以校正它们的位置。具有基本上静止的可控元件102的可能的优点是较容易地将功率和/或数据转移至可控元件102。另外的或可替代的可能的优点是局部调整聚焦以补偿衬底上的高度差的能力得到提高,其中所述高度差大于系统的焦深且处在比移动可控元件的节距更高的空间频率上。In one embodiment, instead of having individually
在这一实施例中,虽然可控元件102是基本上静止的,但是具有相对于独立可控元件102移动的至少一个光学元件。在下文描述了在X-Y平面中基本上静止的独立可控元件102的各种布置以及相对于其可移动的光学元件。In this embodiment, while the
在下文的描述中,在情况允许时,术语“透镜”应当通常理解成包括各种类型的光学部件的任一个或其的组合,包括折射式、反射式、磁性式、电磁式和静电式光学部件,诸如任意的折射式、反射式和/或衍射式光学元件,其提供与所提及的透镜相同的功能。例如,成像透镜可以具体为具有光焦度的传统的折射式透镜的形式、成具有光焦度的Schwarzschild反射式系统的形式、和/或成具有光焦度的区域板的形式。此外,如果产生的效应是在衬底上产生会聚的束,则成像透镜可以包括非成像的光学装置。In the following description, the term "lens" should generally be understood to include any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components, where the circumstances permit. Components, such as any refractive, reflective and/or diffractive optical elements, which provide the same function as the mentioned lenses. For example, the imaging lens may be embodied in the form of a conventional refractive lens with optical power, in the form of a Schwarzschild reflective system with optical power, and/or in the form of a field plate with optical power. Furthermore, the imaging lens may comprise non-imaging optics if the resulting effect is to produce a converging beam on the substrate.
另外,在下文的描述中,对多个独立可控元件102做出参考,诸如反射镜阵列调制器中的反射镜或多个辐射源。然而,应当理解,描述更加通常是指布置成输出多个束的调制器。例如,调制器可以是声光调制器,以从由辐射源提供的束输出多个束。Also, in the following description, reference is made to a plurality of independently
图19显示根据本发明实施例的具有在X-Y平面内是基本静止的多个独立可控元件102(例如激光二极管)和相对于其是可移动的光学元件242的光刻设备的一部分的示意俯视图布局。在这一实施例中,多个独立可控元件102可以连接至框架,且在X-Y平面内是基本上静止的,多个成像透镜242相对于这些独立可控元件102基本上在X-Y平面中移动(如在图19中由轮801的旋转指示所显示的),衬底沿着方向803移动。在一实施例中,成像透镜242通过围绕轴线旋转而相对于独立可控元件102移动。在一实施例中,成像透镜242被安装在围绕轴线(例如沿着图19中显示的方向)旋转的结构上且被以圆形的方式布置(如图19中部分地显示的)。19 shows a schematic top view of a portion of a lithographic apparatus having a plurality of individually controllable elements 102 (such as laser diodes) that are substantially stationary in the X-Y plane and an
每个独立可控元件102提供准直束至移动的成像透镜242。在一实施例中,独立可控元件102与一个或更多的准直透镜相关,以提供准直束。在一实施例中,准直透镜在X-Y平面中是基本上静止的且连接至独立可控元件102连接所在的框架上。Each individually
在这一实施例中,准直束的横截面宽度小于成像透镜242的横截面宽度。因此,在准直束刚完全落入到成像透镜242的光学透射部分中,独立可控元件102(例如激光二极管)就可以被接通。之后在束落入到成像透镜242的光学透射部分之外时,则关断独立可控元件102(例如激光二极管)。因此,在一实施例中,来自独立可控元件102的束在任一时刻穿过单个成像透镜242。成像透镜242相对于来自独立可控元件102的束的所形成的横越(traversal)由被接通的每一独立可控元件102在衬底上产生了相关的成像线800。在图19中,关于图19中的三个示例性的独立可控元件102中的每一个显示出三个成像线800,尽管显然图19中的其它独立可控元件102可以在衬底上产生相关的成像线800。In this embodiment, the cross-sectional width of the collimated beam is smaller than the cross-sectional width of
在图19的布局中,成像透镜242的节距可以是1.5mm,来自每一独立可控元件102的束的横截面宽度(例如直径)略小于0.5mm。对于这一配置,可以用每一独立可控元件102写长度约1mm的线。因此,在束直径为0.5mm且成像透镜242的直径为1.5mm的这一配置中,占空比可以高达67%。对于相对于成像透镜242适当地定位独立可控元件102,跨经衬底的宽度的全覆盖是可行的。因此,例如如果仅使用标准5.6mm直径的激光二极管,那么如图19所示的激光二极管的几个同心环可以用于获得跨经衬底的宽度的全部覆盖。因此,在这一实施例中,可以使用比仅使用独立可控元件102的固定阵列或可能使用此处描述的移动的独立可控元件102的情况更少的独立可控元件102(例如激光二极管)。In the layout of Figure 19, the pitch of the
在这一实施例中,每个成像透镜242应当是相同的,这是因为每个独立可控元件102将通过所有的移动的成像透镜242进行成像。在这一实施例中,所有的成像透镜242不需要使得场成像,尽管需要具有更高NA的透镜,例如大于0.3、大于0.18或大于0.15。对于这样的单一元件的光学装置,衍射限制成像是可能的。In this embodiment, each
衬底上的束的聚焦点不管准直束在哪里进入透镜,均被固定至成像透镜242的光轴(参见,例如图20,其显示是图19的光刻设备的一部分的示意三维视图)。这一布置的缺点是来自成像透镜242朝向衬底的束不是远心的,并因此会发生聚焦误差,从而可能导致重叠误差。The focal point of the beam on the substrate is fixed to the optical axis of the
在这一实施例中,通过使用在X-Y平面中不移动的(例如在独立可控元件102处)的元件调整聚焦将可能引起晕影。因此,期望的聚焦调整应当在移动的成像透镜242中发生。这因此可能需要比移动的成像透镜242更高频率的致动器。In this embodiment, adjusting the focus by using elements that do not move in the X-Y plane (eg at the individually controllable elements 102) will likely cause vignetting. Therefore, the desired focus adjustment should occur in the moving
图21显示根据本发明的实施例的具有在X-Y平面中基本上静止的独立可控元件和相对于其可移动的光学元件的光刻设备的一部分的示意侧视图布局,且显示相对于独立可控元件的成像透镜242组的三个不同的旋转位置。在这一实施例中,图19和20中的光刻设备通过具有成像透镜242进行扩展,该成像透镜242包括用于接收来自独立可控元件102的准直束的两个透镜802、804。如在图19中示出的那样,成像透镜242相对于独立可控元件102在X-Y平面中移动(例如围绕至少部分地以圆形方式布置成像透镜242所对应的轴线旋转)。在这一实施例中,在到达成像透镜242之前,通过透镜806使得来自独立可控元件102的束准直,但在一实施例中不需要提供这样的透镜。透镜806基本上在X-Y平面中是静止的。衬底沿着X方向移动。Figure 21 shows a schematic side view layout of a portion of a lithographic apparatus having independently controllable elements substantially stationary in the X-Y plane and optical elements movable relative thereto according to an embodiment of the present invention, and shows the relative to the independently controllable elements. Three different rotational positions of the
两个透镜802、804布置在准直束的从独立可控元件102至衬底的光路中,以使得束朝向衬底是远心的。在独立可控元件102和透镜804之间的透镜802包括具有大致相等的焦距的两个透镜802A、802B。来自独立可控元件102的准直束在两个透镜802A,802B之间聚焦,使得透镜802B将朝向成像透镜804准直所述束。成像透镜804使得束成像到衬底上。Two
在这一实施例中,透镜802相对于独立可控元件102在X-Y平面内以特定的速度(例如每分钟特定的转数(RPM))移动。因此,在这一实施例中,如果移动的成像透镜804以与透镜802相同的速度移动的话,来自透镜802的出射的准直束将在X-Y平面内具有两倍于移动的成像透镜804的速度。因此,在这一实施例中,成像透镜804相对于独立可控元件102以不同于透镜802的速度的速度移动。尤其是,成像透镜804以透镜802的速度的两倍的速度(例如透镜802的RPM的两倍)在X-Y平面中移动,使得束将被远心地聚焦到衬底上。在图21的三个示例性的位置中示意性地显示了来自透镜802的出射的准直束与成像透镜804的对准。另外,因为在衬底上的实际刻写与图19中的例子相比将以所述速度的两倍的速度完成,所以独立可控元件102的功率应当是两倍的。In this embodiment, the
在这一实施例中,通过使用在X-Y平面中不移动的(例如在独立可控元件102处的)元件调整聚焦,将可能导致远心损失且引起晕影。因此,应当在移动的成像透镜242中出现期望的聚焦调整。In this embodiment, by adjusting the focus using elements that do not move in the X-Y plane (eg at the individually controllable elements 102 ), a loss of telecentricity would likely result and cause vignetting. Therefore, the desired focus adjustment should occur in the moving
另外,在这一实施例中,所有的成像透镜242不需要使得场成像。对于这样的单个元件的光学装置,衍射限制的成像是可能的。约65%的占空比是可能的。在一实施例中,透镜806,802A,802B和804可以包括2个非球面透镜和2个球面透镜。Additionally, in this embodiment, not all of the
在一实施例中,可以使用约380个独立可控元件102(例如标准激光二极管)。在一实施例中,可以使用约1400个成像透镜242的组。在使用标准激光二极管的实施例中,可以使用约4200个成像透镜242的组,其可以布置成轮上的6个同心环。在一实施例中,成像透镜的旋转的轮将以约12000RPM旋转。In one embodiment, approximately 380 individually controllable elements 102 (eg, standard laser diodes) may be used. In one embodiment, a set of approximately 1400
图22显示根据本发明的实施例的具有在X-Y平面中基本上静止的独立可控元件和相对于其可移动的光学元件的光刻设备的一部分的示意侧视图布局,且显示相对于独立可控元件的成像透镜242的组的三个不同的旋转位置。在这一实施例中,为了避免以与如关于图21描述的不同的速度移动透镜,可以如图22所显示使用用于移动成像透镜242的所谓的4f远心进/远心出(telecentric in/telecentric out)的成像系统。移动的成像透镜242包括两个成像透镜808、810,该两个成像透镜808、810在X-Y平面中以大致相同的速度移动(例如围绕在至少部分地以圆形方式布置成像透镜242所沿的轴线旋转),且接收远心束作为输入和将远心成像束输出至衬底。在1倍放大率的布置中,衬底上的图像以与移动的成像透镜242两倍的速度一样快地移动。衬底沿着X方向移动。在这一布置中,光学装置将可能需要以相对大的NA(例如大于0.3、大于0.18或大于0.15)使场成像。这一布置可能不具有两个单元件光学装置。可能需要具有非常准确的对准公差的六个或更多的元件,以获得衍射限制图像。约65%的占空比是可能的。在这一实施例中,还用不与可移动的成像透镜242一起移动或配合可移动的成像透镜242移动的元件相对容易地进行局部聚焦。Figure 22 shows a schematic side view layout of a portion of a lithographic apparatus having independently controllable elements substantially stationary in the X-Y plane and optical elements movable relative thereto according to an embodiment of the present invention, and shows the relative to the independently controllable elements. Three different rotational positions of the group of
图23显示根据本发明的实施例的具有在X-Y平面中基本上静止的独立可控元件和相对于其可移动的光学元件的光刻设备的一部分的示意侧视图布局,且显示相对于独立可控元件的成像透镜242的组的五个不同的旋转位置。在这一实施例中,为了避免以与关于图21所描述的不相同的速度移动透镜,且具有不使得如关于图22所指出的对场成像的光学装置,在X-Y平面中基本上静止的透镜的组合与移动的成像透镜242结合。参考图23,设置了在X-Y平面中基本上静止的独立可控元件102。提供了在X-Y平面中基本上静止的可选的准直透镜806,用于准直来自独立可控元件102的束,且提供准直束(具有例如0.5mm的横截面宽度(例如直径))至透镜812。Figure 23 shows a schematic side view layout of a portion of a lithographic apparatus having independently controllable elements substantially stationary in the X-Y plane and optical elements movable relative thereto, and showing the relative to the independently controllable elements, according to an embodiment of the invention. Five different rotational positions of the group of
另外,透镜812在X-Y平面中是基本上静止的且将准直束聚焦至移动的成像透镜242的场透镜814(具有例如1.5mm的横截面宽度(例如直径))。透镜814具有相对大的焦距(例如f=20mm)。Additionally,
可移动的成像透镜242的场透镜814相对于独立可控元件102移动(例如围绕在至少部分地以圆形方式布置成像透镜242所沿的轴线旋转)。场透镜814朝向可移动的成像透镜242的成像透镜818引导束。如同场透镜814,成像透镜818相对于独立可控元件102移动(例如围绕在至少部分地以圆形方式布置成像透镜242所沿的轴线旋转)。在这一实施例中,场透镜814以与成像透镜818大致相同的速度移动。一对场透镜814和成像透镜818彼此对准。衬底沿着X方向移动。The
在场透镜814和成像透镜818之间的是透镜816。透镜816在X-Y平面中是基本上静止的,且将来自场透镜814的束准直到成像透镜818。透镜816具有相对大的焦距(例如,f=20mm)。Between
在这一实施例中,场透镜814的光轴应当与对应的成像透镜816的光轴重合。场透镜814设计成使得将所述束折叠,从而被透镜816准直的束的主射线与成像透镜818的光轴重合。这样,朝向衬底的束是远心的。In this embodiment, the optical axis of the
由于大的f数,透镜812和816可以是简单的球面透镜。场透镜814不会影响图像品质,且还可以是球面元件。在这个实施例中,准直透镜806和成像透镜818是不需要对场成像的透镜。对于这一单个元件的光学装置,衍射限制成像是可能的。约65%的占空比是可以的。Due to the large f-number,
在一实施例中,在可移动的成像透镜242是可旋转的情况下,提供独立可控元件102和透镜的至少两个同心环,以获得跨经衬底宽度的全部覆盖。在一实施例中,在这些环上的独立可控元件102被布置成处于1.5mm的节距处。如果使用具有直径为5.6mm的标准激光二极管,那么对于全部覆盖可能需要至少6个同心环。图24和25显示根据这些布置的独立可控元件102的同心环的布置。在一实施例中,这将导致约380个独立可控元件102和在X-Y平面中基本上静止的对应的透镜。移动的成像透镜242将具有700×6个环=4200组透镜814、818。借助于这一配置,可以用每一独立可控元件102刻写长度约1mm的线。在一实施例中,可以使用约1400个成像透镜242的组。在一实施例中,透镜812,814,816和818可以包括4个非球面透镜。In one embodiment, where the
在这一实施例中,通过使用在X-Y平面中不移动(例如在独立可控元件102处)的元件调整聚焦将可能导致远心损失和引起晕影。因此,期望的聚焦调整应当在移动的成像透镜242中发生。这因此可能需要比移动的成像透镜242更高频率的致动器。In this embodiment, adjusting focus by using elements that do not move in the X-Y plane (eg at the individually controllable elements 102) would likely result in loss of telecentricity and cause vignetting. Therefore, the desired focus adjustment should occur in the moving
图26显示根据本发明的实施例的具有在X-Y平面中基本上静止的独立可控元件和相对于其可移动的光学元件的光刻设备的一部分的示意侧视图布局。在这一实施例中,光学消转仪(derotator)用于将在X-Y平面中大致静止的独立可控元件102耦合至移动的成像透镜242。Figure 26 shows a schematic side view layout of a portion of a lithographic apparatus having independently controllable elements substantially stationary in the X-Y plane and optical elements movable relative thereto, according to an embodiment of the invention. In this embodiment, an optical derotator is used to couple the individually
在这一实施例中,独立可控元件102与可选的准直透镜一起布置成环。两个抛物面反射镜820、822使得来自独立可控元件102的准直束的环减小至对于消转仪824可接受的直径。在图26中,佩肯(pechan)棱镜用作消转仪824。如果消转仪以与成像透镜242的速度相比的一半的速度旋转,每个独立可控元件102看上去相对于其各自的成像透镜242是大致静止的。两个另外的抛物面反射镜826、828使得来自消转仪824的消转束的环扩张至对于移动的成像透镜242可接受的直径。衬底沿着X方向移动。In this embodiment the individually
在这一实施例中,每个独立可控元件102与成像透镜242成为一对。因此,不可以将独立可控元件102安装在同心环上,因此不可能获得跨经衬底的宽度的全部覆盖。约33%的占空比是可能的。在这一实施例中,成像透镜242是不需要对场成像的透镜。In this embodiment, each individually
图27显示根据本发明的实施例的具有在X-Y平面中基本上静止的独立可控元件和相对于其可移动的光学元件的光刻设备的一部分的示意侧视图布局。在这种布置中,成像透镜242布置成围绕在X-Y平面中延伸的方向旋转(例如旋转鼓,而不是如例如关于图19-26所描述的旋转轮)。参考图27,可移动的成像透镜242布置在被布置成围绕例如Y方向旋转的鼓上。可移动的成像透镜242接收在鼓的旋转轴线和可移动的成像透镜242之间的Y方向上的线上延伸的来自独立可控元件102的辐射。原则上,通过这样的鼓的可移动的成像透镜242刻写的线将平行于衬底的扫描方向831。因此,以45°安装的消转仪830布置成将通过鼓的可移动的成像透镜242制造的线旋转90°,使得成像的线垂直于衬底的扫描方向。衬底沿着X方向移动。Figure 27 shows a schematic side view layout of a portion of a lithographic apparatus having independently controllable elements substantially stationary in the X-Y plane and optical elements movable relative thereto, according to an embodiment of the invention. In such an arrangement, the
对于衬底上的每条条纹,在鼓上将需要可移动的成像透镜242的圆圈。如果一个这样的圆圈可以在衬底上刻写3mm宽的条纹且衬底为300mm宽,那么可能在鼓上需要700(鼓的圆周上的光学装置)×100=70000个光学组件。如果在鼓上使用圆柱形光学装置,则其可能是较少的。另外,在这一实施例中成像光学装置可能需要对特定场成像,其可能使得光学装置更加复杂。约95%的占空比是可能的。这一实施例的优点是所成像的条纹可以具有大致相等的长度、且是大致平行的且是直的。在这一实施例中,用不与可移动的成像透镜242一起移动或结合其一起移动的元件进行局部聚焦是相对容易的。For each stripe on the substrate, a circle of
图28显示根据本发明的实施例的具有在X-Y平面中基本上静止的独立可控元件和相对于其可移动的光学元件的光刻设备的一部分的示意侧视图布局,且显示相对于独立可控元件的成像透镜242的组的五个不同的旋转位置。Fig. 28 shows a schematic side view layout of a portion of a lithographic apparatus having independently controllable elements substantially stationary in the X-Y plane and optical elements movable relative thereto according to an embodiment of the present invention, and shows the relative to the independently controllable elements. Five different rotational positions of the group of
参考图28,设置了在X-Y平面中基本上静止的独立可控元件102。可移动的成像透镜242包括多个透镜组,每个透镜组包括场透镜814和成像透镜818。衬底沿着X方向移动。Referring to Figure 28, individually
可移动的成像透镜242的场透镜814(例如球面透镜)相对于独立可控元件102沿着方向815移动(例如围绕在成像透镜242被至少部分地以圆形方式布置所沿的的轴线旋转)。场透镜814朝向可移动的成像透镜242的成像透镜818(例如,诸如双非球面透镜等非球面透镜)引导束。如同场透镜814,成像透镜818相对于独立可控元件102移动(例如围绕在成像透镜242被至少部分地以圆形方式布置所沿的轴线旋转)。在这一实施例中,场透镜814以基本上与成像透镜818相同的速度移动。The field lens 814 (e.g., a spherical lens) of the
场透镜814的焦平面在位置815处与成像透镜818的后焦面重合,其提供远心进/远心出的系统。与图23的布置相反,成像透镜818对特定场成像。场透镜814的焦距使得用于成像透镜818的场尺寸小于2至3°的半角。在这种情形中,还可以用一个单元件光学装置(例如双非球面表面单元件)获得衍射限制成像。布置场透镜814安装成在各个场透镜814之间没有间距。在这种情形下,独立可控元件102的占空比可以是约95%。The focal plane of
成像透镜818的焦距使得对于在衬底处的为0.2的NA,这些透镜将不会大于场透镜814的直径。等于场透镜814的直径的成像透镜818的焦距将提供成像透镜818的直径,其留下了用于安装成像透镜818的足够空间。The focal length of the
由于场角度,可以刻写比场透镜814的节距略微大的线。另外依赖于成像透镜818的焦距,这提供了衬底上的相邻的独立可控元件102的所成像的线之间的重叠。因此,独立可控元件102可以安装在与一个环上的成像透镜242节距相同的节距上。Due to the field angle, lines slightly larger than the pitch of the
图29显示出图28的光刻设备的一部分的示意三维视图。在这一描述中,5个独立可控元件102显示具有5个相关的可移动的成像透镜组242。可以明白,可以提供另外的独立可控元件102和相关的可移动的成像透镜组242。衬底沿着由箭头829显示的X方向移动。在一实施例中,场透镜814布置成它们之间没有间距。光瞳面位于标记817处。FIG. 29 shows a schematic three-dimensional view of a portion of the lithographic apparatus of FIG. 28 . In this depiction, five individually
为了避免相对小的双非球面成像透镜818,减小移动的成像透镜242的光学装置的量以及使用标准激光二极管作为独立可控元件102,在这一实施例中可能使用可移动的成像透镜242的单个透镜组对多个独立可控元件102成像。只要独立可控元件102被远心地成像到每一可移动的成像透镜242的场透镜814上,对应的成像透镜818将使得来自独立可控元件102的束再次远心地成像到衬底上。如果例如8条线被同时刻写,那么场透镜814的直径和成像透镜818的焦距在相同的生产率下可以被增加8倍,同时可移动的成像透镜242的数量可以被减小8倍。另外,因为用于使得独立可控元件102成像到场透镜814上所需要的光学装置的一部分可以是公共的,所以在X-Y平面中基本上静止的光学装置可以被减少。在图30中示意性地显示通过单个可移动的成像透镜242的组同时刻写8条线的这样的布置,具有成像透镜242的组的旋转轴线821和成像透镜242的组距离旋转轴线821的半径823。从1.5mm的节距至12mm的节距(在通过单个可移动的成像透镜242的组同时刻写8条线时)为安装作为独立可控元件102的标准激光二极管留下了足够的空间。在一实施例中,224个独立可控元件102(例如标准激光二极管)可以被使用。在一实施例中,可以使用120个成像透镜242的组。在一实施例中,可以使用28个基本上静止的光学装置组和224个独立可控元件102。In order to avoid the relatively small double
在这一实施例中,还相对容易地用不与可移动的成像透镜242一起移动或配合其一起移动的元件进行局部聚焦。只要场透镜814上的独立可控元件102的远心图像被沿着光轴移动且保持成远心的,将仅衬底上的图像的聚焦变化,且图像将保持是远心的。图31显示用图28和29的布置中的移动屋顶状部件控制聚焦的示意性布置。两个折叠的反射镜832和屋顶状部件(例如棱镜或反射镜组)834放置在来自独立可控元件102的远心束中,且在场透镜814的前面。通过沿着方向833移动屋顶状部件834远离或朝向折叠的反射镜832,图像被沿着光轴移位,并且因此也相对于衬底移位。因为由于轴向聚焦变化等于F/数的二次方比例,沿着光轴具有大的放大倍数,所以具有F/2.5的束的衬底处的25μm的离焦将提供在f/37.5的束的场透镜814处的5.625mm(37.5/2.5)2的聚焦位移。这意味着屋顶状部件834必须移动其的一半。In this embodiment, it is also relatively easy to locally focus with elements that do not move with or cooperate with the
图32显示根据本发明的实施例的具有根据本发明的实施例的在X-Y平面中基本上静止的独立可控元件和相对于其可移动的光学元件的光刻设备的示意横截面侧视图。虽然图32显示类似于图23的布置,但是它可以修改为适合图19-22和/或图24-31中的任一实施例。Figure 32 shows a schematic cross-sectional side view of a lithographic apparatus having independently controllable elements substantially stationary in the X-Y plane and optical elements movable relative thereto according to embodiments of the present invention. Although Fig. 32 shows an arrangement similar to that of Fig. 23, it may be modified to suit any of the embodiments of Figs. 19-22 and/or Figs. 24-31.
参考图32,光刻设备100包括保持衬底的衬底台106,和在高达6个自由度上移动衬底台106的定位装置116。Referring to FIG. 32, the
光刻设备100还包括在框架160上布置的多个独立可控元件102。在这一实施例中,每个独立可控元件102是发射辐射二极管,例如激光二极管,诸如蓝紫激光二极管。独立可控元件102布置在框架838上且沿着Y方向延伸。虽然显示一个框架838,但是光刻设备可以具有与例如在图5中的阵列200类似地显示的多个框架838。进一步地布置在框架838上的是透镜812和816。框架838和因此独立可控元件102与透镜812和816在X-Y平面中是基本上静止的。框架838、独立可控元件102以及透镜812和816可以通过致动器836沿着Z方向移动。The
在这一实施例中,设置可旋转的框架840。场透镜814和成像透镜818布置在框架840上,其中场透镜814和成像透镜818的组合形成了可移动的成像透镜242。在使用中,板围绕其自身的轴线206旋转,例如沿着相对于阵列200的由图5中箭头显示的方向。使用电机216使框架840围绕轴线206旋转。另外,可以通过电机216沿着Z方向移动框架840,使得可移动的成像透镜242可以相对于衬底台106移位。In this embodiment, a
在这一实施例中,在其中具有孔阑的孔阑结构248可以位于透镜812的上方、在透镜812和相关的独立可控元件102之间。孔阑结构248可以限制透镜812、相关的独立可控元件102的衍射效应、和/或相邻的透镜812/独立可控元件102的衍射效应。In this embodiment, the
在一实施例中,光刻设备100包括一个或更多的可移动板890(例如可旋转板,例如可旋转盘),其包括光学元件,例如透镜。在图32的实施例中,显示具有场透镜814的板890和具有成像透镜818的板890。在一实施例中,在使用时光刻设备没有旋转的任何反射式光学元件。在一实施例中,光刻设备没有任何反射式光学元件,其接收来自任意或所有独立可控元件102的辐射,其在使用时旋转。在一实施例中,一个或更多的(例如全部)板890是大致平坦的,例如没有伸出到板的一个或更多的表面上方或下面的光学元件(或光学元件的一部分)。例如这可以通过确保板890是足够厚的(即至少比光学元件的高度厚且定位光学元件使得它们不会伸出)或通过提供在板890(未显示)上方的平坦的盖板来实现。确保板的一个或更多的表面是基本上平坦可以帮助例如在设备处于使用中时减小噪音。In an embodiment, the
图33示意性地示出光刻设备的一部分的横截面侧视示意图,该光刻设备具有大致在X-Y平面内静止的独立可控元件。光刻设备900包括用于保持衬底的衬底支撑结构902和用于在高达6个自由度上移动衬底支撑结构902的定位装置904。衬底可以是涂覆有抗蚀剂的衬底(例如硅晶片或玻璃板)。Figure 33 schematically shows a schematic cross-sectional side view of a portion of a lithographic apparatus having individually controllable elements substantially stationary in the X-Y plane. The
光刻设备900还包括配置成发射多个束的多个独立可控辐射源906。如图33所示,辐射源906是自发射式对比度装置。在实施例中,自发射式对比度装置906是发射辐射二极管,诸如发光二极管(LED)、有机LED(OLED)、聚合物LED(PLED)或激光二极管(例如固态激光二极管)。在实施例中,每个独立可控元件906是蓝紫色激光二极管(例如三洋(Sanyo)型号no.DL-3146-151)。这样的二极管可以由诸如Sanyo,Nichia,Osram和Nitride的公司供应。在实施例中,二极管发射具有大约365nm或大约405nm的波长的辐射。在实施例中,二极管可以提供从0.5-200mW的范围内选择的输出功率。在实施例中,激光二极管(裸露的管芯)的尺寸是从100-800微米的范围内选择。在实施例中,激光二极管具有从1-5平方微米的范围内选择的发射面积。在实施例中,激光二极管具有从7-44度的范围选择的发散角。在实施例中,二极管具有用于提供大于或等于大约6.4x 108W/(m2.sr)的总亮度的配置(例如,发射面积、发散角、输出功率等)。The
独立可控装置906布置在框架908上且可以沿着Y方向和/或X方向延伸。虽然示出了一个框架908,但是光刻设备可以具有多个框架908。在框架908上还布置有透镜920。框架908和因此独立可控的自发射式对比度装置906和透镜920大致在X-Y平面中是静止的。可以通过致动器910沿着Z方向移动框架908、独立可控对比度装置906以及透镜920。The individually
自发射式对比度装置906可以配置成发射束,投影系统920、924和930可以配置成将束投影到衬底的目标部分上。自发射式对比度装置906和投影系统形成光学装置列。光刻设备900可以包括配置成用于相对于衬底移动光学装置列或其的一部分的致动器(例如电机918)。在其上布置有场透镜924和成像透镜930的框架912可以随着致动器旋转。场透镜924和成像透镜930的组合形成了可移动的光学装置914。在使用中,框架912围绕其自身的轴线916旋转,例如沿着由图34中的箭头显示的方向旋转。通过使用致动器(例如电机918)使框架912围绕轴线916旋转。另外,可以通过电机910使框架912沿着Z方向移动,使得可移动的光学装置914可以相对于衬底支撑结构902移位。在图33中,在光刻设备的相对侧上显示出两个光学装置列。在实践中,光刻设备可以包括例如在光刻设备的周边的上方分布的多于两个的光学装置列。每个光学装置列包括一个或更多个自发射式对比度装置906和投影系统920的固定部分。光学装置列的可旋转部分(包括透镜924、930)可以被相对于多个光学装置列使用,例如在使框架912旋转时。Self-
孔结构922其中具有孔,可以定位在透镜920的上方且在透镜920和自发射式对比度装置906之间。孔结构922可以限制透镜920、相关的独立可控自发射式对比度装置906的衍射效应和/或相邻的透镜920/独立可控自发射式对比度装置906的衍射效应。Aperture structure 922 has a hole therein and may be positioned above
所示出的设备可以通过旋转框架912和同时在光学装置列的下面移动衬底支撑结构902上的衬底而被使用。自发射式对比度装置906可以在透镜920、924和930大致彼此对准时发射束穿过这些透镜。通过移动透镜924和930,束在衬底上的像被在衬底的一部分之上进行扫描。通过同时在光学装置列的下面移动衬底支撑结构902上的衬底,遭受自发射式对比度装置906的像的衬底的一部分也移动。通过在用于控制光学装置列或其一部分的旋转和控制衬底的速度的控制器的控制之下高速地接通和/或关断自发射式对比度装置906,可以在衬底上的抗蚀剂层中对期望的图案进行成像。The apparatus shown can be used by rotating the
图34示出具有自发射式对比度装置906的图33的光刻设备的示意性俯视图。如同图33中显示的光刻设备900那样,光刻设备900包括用于保持衬底928的衬底支撑结构902、用于在高达6个自由度上移动衬底支撑结构902的定位装置904、用于确定光学装置列相对于衬底928的位置以及用于确定衬底928是否相对于自发射式对比度装置906的投影处于水平的位置/调平传感器932。如图所示,衬底928具有矩形形状,然而,还可以处理圆形衬底。FIG. 34 shows a schematic top view of the lithographic apparatus of FIG. 33 with a self-
自发射式对比度装置906布置在框架926上。自发射式对比度装置906可以是发射辐射二极管,例如激光二极管,例如蓝紫色激光二极管。如图34所示,对比度装置906可以布置到在X-Y平面中延伸的阵列中,一个或更多的对比度装置906与每个光学装置列相关。对比度装置906在如图34所示的多于4个的光刻轮上被划分。每个光刻轮包括被安装在固定框架908和可旋转的框架912上的多个光学装置列。在光刻轮内,光学装置列可以共享安装在可旋转的框架912上的光学装置列的一部分,诸如透镜924、930,即在使框架旋转时,透镜924、930可能随后被光刻轮中的不同的光学装置列使用。The self-
所述阵列可以是细长的线。在实施例中,所述阵列可以是一个或更多的独立可控对比度装置906的一维阵列。在实施例中,阵列可以是一个或更多个独立可寻址的对比度装置906的两维阵列。The array may be an elongated wire. In an embodiment, the array may be a one-dimensional array of one or more independently
可以提供可旋转框架912,其可以沿着由所述箭头显示的方向旋转。可旋转框架可以设置有透镜924、930(在图33中),以提供每个可移动的独立对比度装置906的图像。A
所述设备可以设置有配置成旋转可旋转框架912的致动器,于是光学装置列的可旋转部分包括透镜924、930。The apparatus may be provided with an actuator configured to rotate the
在产生图案的过程期间,衬底928优选地被沿着扫描方向以恒定的扫描速度vscan移动。衬底928被沿着大致垂直于扫描方向的方向划分成许多条带936,每个条带936与其自身的光学装置列相关联,每个光学装置列包括多个自发射式对比度装置906和投影系统920的固定部分。光学装置列的可旋转部分(包括透镜924、930)可以被相对于由可旋转框架912覆盖的其他条带936使用。每个条带936被沿着扫描方向划分成多个相邻的且部分重叠的目标部分938。在衬底的扫描移动期间,单个条带中的目标部分被随后由相关的光学装置列中的对比度装置906的束曝光。目标部分938具有与相邻的条带936中的相邻的目标部分938的重叠以及与同一条带936中的相邻目标部分938的重叠。需要该重叠,用于获得在整个衬底表面上的可靠的图案。During the patterning process, the
在实施例中,对于在大致垂直于扫描方向的方向上的所有条带936,设置光学装置列,使得可以通过一次扫描在衬底上生成图案。In an embodiment, for all
在将图案投影到衬底上时,期望投影到衬底上的图案化的束与将在其上生成图案的衬底的表面被正确地对准且处于正焦位置。When projecting a pattern onto a substrate, it is desirable that the patterned beam projected onto the substrate is properly aligned and in focus with the surface of the substrate on which the pattern will be generated.
在本申请中,术语“用于对准”和“对准”意思是光学装置列布置成或控制成使得,在光学装置列的目标部分938中生成的图案彼此连接,完成的图案不包括由于光学装置列相对于衬底的不正确的定位造成的任何误差。In this application, the terms "for alignment" and "alignment" mean that the optical train is arranged or controlled such that the patterns generated in the
为了控制光学装置列相对于衬底的对准,设置了对准控制系统956,其的可行的实施例在图940中显示出。对准控制系统956包括:用于每一光学装置列的位置测量装置944,以确定光学装置列相对于基准的位置;和对准调节装置954,用于基于所测量的位置确定光学装置列中的一个或更多的束的位置。To control the alignment of the columns of optics relative to the substrate, an
对准控制系统956布置成在开始实际的光刻过程之前确定光学装置列相对于彼此的位置。光学装置列的位置相对于参考物体940来确定。参考物体940可以是具有多个参考标记的衬底928,但是优选地是分离的物体,其被安装在衬底支撑装置902上。参考物体940具有许多标记。参考物体940被以高精度制造,且在衬底的整个宽度上延伸。The
参考物体940上的标记布置成使得,标记布置在两个或更多的光学装置列中的两个相邻的光学装置列的目标部分938的每一重叠部分中。结果,该标记可以用于两个相邻的光学装置列中的每一个的位置测量。例如,每个光学装置列的位置测量装置944可以包括图像传感器952(参见实施例图35),用该图像传感器952可以确定标记在X方向和Y方向上的位置,即在衬底928的主平面中的方向上的位置。基于这一信息,可以确定目标部分938的相对位置,且在需要时,可以执行所产生的校正动作。The marks on the
对准调节装置94配置成执行这样的校正动作。这样的校正动作可以例如是对在目标部分938中所投影的图案的调节。The alignment adjustment device 94 is configured to perform such corrective actions. Such a corrective action may be, for example, an adjustment of the projected pattern in the
例如,对比度装置906的激励时间和/或强度可以基于两个相邻的光学装置列的相对位置而被修改。这样,调节将在两个相邻的目标部分中被投影的图案。For example, the activation time and/or intensity of the
另外,可行的是,在两个目标部分之间的重叠太多时,在目标部分938中的一个或两个中的多条线被跳过,以避免将两个图案投影到衬底928上。Additionally, it is possible that multiple lines in one or both of the
在另一可行的方案中,可以执行数据图案在X方向或Y方向上的缩放,以补偿位置偏移。In another feasible solution, scaling of the data pattern in the X direction or the Y direction may be performed to compensate for the positional offset.
在对准调节装置954的实施例中,在光刻过程自身中执行对对准的调节,而不是通过任何直接的机械调节,例如对目标部分938的位置的调节。可替代地或另外地,校正动作可以涉及光刻设备内的机械调节,例如改变光学装置列的相对位置。对准调节装置954可以是分离的处理单元或处理器,但是在实施例中,是负责激励对比度装置906以在衬底928上生成图案的主处理单元或主处理器的一部分。In an embodiment of the
在可替代的实施例中,光刻设备中的可移动的部分,例如可移动的透镜元件920(参见图33)可以用于校正光学装置列的对准。例如,可移动透镜元件920可以基于目标部分938的被测量的位置由致动器942(参见图33)来致动,以校正目标部分938的相对位置。在这一实施例中,对准调节装置包括可移动透镜元件920和致动器942,其中致动器942或光刻设备通常还包括控制可移动透镜元件920的对准调节移动的处理单元或处理器。可移动透镜元件920还可以用于光学装置列的其他调节。In an alternative embodiment, a movable part of the lithographic apparatus, such as the movable lens element 920 (see FIG. 33 ), may be used to correct the alignment of the optics column. For example,
现在,将更详细地描述位置测量装置的可行实施例。A possible embodiment of the position measuring device will now be described in more detail.
图35显示对准控制装置或控制器的实施例,其包括用于确定每一光学装置列的束相对于参考物体940的位置的位置测量装置944和对准调节装置954。位置测量装置944集成在光学装置列中。FIG. 35 shows an embodiment of an alignment control device or controller comprising a
为了确定各自的光学装置列的束的位置,参考物体940被布置在各自的光学装置列的下面。通过对比度装置906将束投影到参考物体940上。投影束穿过透镜920、分束装置或分束器946、1/4波片948以及在可旋转框架8上的透镜924、930。束被参考物体940反射,反射的束包括参考物体940上设置的标记的图像。反射的束再次穿过透镜924、930和1/4波片948。由于由1/4波片948造成的相移,反射的束现在被分束器946反射。反射的束经由透镜950到达图像传感器952,例如CCD照相机。In order to determine the position of the beams of the respective optics column, a
在每一光学装置列中,布置了这样的位置测量装置944。如上文所述,参考物体940包括在两个目标部分的每一重叠区域中的至少一个标记。通过分析在两个相邻光学装置列的图像传感器952上的包括相同标记的图像,可以确定光学装置列的相对位置。In each optical column, such a
对投影到图像传感器952上的图像的分析可以通过作为图像传感器952的一部分的处理单元或处理器或分立的处理单元来执行。处理单元可以是光刻设备的中央处理单元或中央处理器的一部分。在实施例中,可以在对准调节装置954中执行所述分析。Analysis of the image projected onto
通过对所有的光学装置列重复对准控制,可以确定光学装置列的所有目标部分的相对位置,另外于是确定光刻轮相对于彼此的位置。基于这一信息,可以通过对准调节装置954来调节被投影到所有目标部分中的图案,使得用于整个衬底928的图案可以被投影到衬底928上,由此由于两个相邻的目标部分的重叠区域中的不对准造成的误差被避免。By repeating the alignment control for all optical columns, it is possible to determine the relative positions of all target portions of the optical columns, and thus the positions of the reticle wheels relative to each other. Based on this information, the pattern projected into all target portions can be adjusted by aligning the
光学装置列的对准位置测量典型地在开始实际的光刻过程之前被执行。可以在光刻设备的组建期间和光刻设备的定期校准期间执行这样的校准过程,但是还可以在每一光刻投影过程之前执行所述校准过程。Alignment position measurements of the optics column are typically performed before starting the actual lithography process. Such a calibration process may be performed during the set-up of the lithographic apparatus and during periodic calibration of the lithographic apparatus, but may also be performed before each lithographic projection process.
现在参考图34,在开始光刻过程时,朝向光刻轮以扫描速度vscan移动衬底928。在衬底到达光刻轮之前,传感器932可以测量衬底相对于光学装置列的位置。在需要时,衬底的位置(例如在Y方向上)可以被改变以适当地相对于光刻轮定位衬底。另外,对准调节装置954可以调节整个图案。然而,由于对准控制系统956的设置,由于光学装置列之间的不对准造成的图案自身的误差被很好地避免。Referring now to FIG. 34, at the beginning of the lithography process, the
在下文标以序号的方面中还提供了实施例:Embodiments are also provided in the following numbered aspects:
1.一种光刻设备,包括:1. A lithographic apparatus, comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,配置成使所述衬底的曝光区域由根据期望的图案调制的多个束进行曝光;和a modulator configured to expose an exposed region of the substrate with a plurality of beams modulated according to a desired pattern; and
投影系统,配置成将所调制的束投影到所述衬底上且包括接收所述多个束的透镜阵列,所述投影系统配置成在所述曝光区域的曝光期间相对于所述调制器移动所述透镜阵列。a projection system configured to project the modulated beam onto the substrate and comprising a lens array receiving the plurality of beams, the projection system configured to move relative to the modulator during exposure of the exposure region the lens array.
2.根据实施例1所述的光刻设备,其中每一透镜包括沿着从所述调制器至所述衬底的所述多个束中的至少一个束的束路径布置的至少两个透镜。2. The lithographic apparatus of
3.根据实施例2所述的光刻设备,其中所述至少两个透镜中的第一透镜包括场透镜,所述至少两个透镜中的第二透镜包括成像透镜。3. The lithographic apparatus of embodiment 2, wherein a first lens of the at least two lenses comprises a field lens and a second lens of the at least two lenses comprises an imaging lens.
4.根据实施例3所述的光刻设备,其中所述场透镜的焦平面与所述成像透镜的后焦面重合。4. The lithographic apparatus of embodiment 3, wherein the focal plane of the field lens coincides with the back focal plane of the imaging lens.
5.根据实施例3或4所述的光刻设备,其中所述成像透镜包括双非球面透镜。5. The lithographic apparatus of embodiment 3 or 4, wherein the imaging lens comprises a double aspherical lens.
6.根据实施例3-5中任一个所述的光刻设备,其中所述场透镜的焦距使得所述成像透镜的场尺寸小于2至3°半角。6. The lithographic apparatus according to any one of embodiments 3-5, wherein the focal length of the field lens is such that the field size of the imaging lens is smaller than 2 to 3° half angle.
7.根据实施例3-6中任一个所述的光刻设备,其中所述成像透镜的焦距使得对在所述衬底处的为0.2的NA,所述成像透镜不大于所述场透镜的直径。7. The lithographic apparatus of any one of embodiments 3-6, wherein the imaging lens has a focal length such that for an NA of 0.2 at the substrate, the imaging lens is no larger than the field lens diameter.
8.根据实施例7所述的光刻设备,其中所述成像透镜的焦距等于所述场透镜的直径。8. The lithographic apparatus of embodiment 7, wherein the focal length of the imaging lens is equal to the diameter of the field lens.
9.根据实施例3-8中任一个所述的光刻设备,其中用所述场透镜和所述成像透镜的单一组合使得多个所述束成像。9. The lithographic apparatus according to any one of embodiments 3-8, wherein a plurality of said beams are imaged with a single combination of said field lens and said imaging lens.
10.根据实施例3-9中任一个所述的光刻设备,还包括聚焦控制装置,该聚焦控制装置沿着从所述调制器至所述场透镜的所述多个束中的至少一个束的束路径布置。10. The lithographic apparatus according to any one of embodiments 3-9, further comprising focus control means along at least one of said plurality of beams from said modulator to said field lens The beam path arrangement for the beam.
11.根据实施例10所述的光刻设备,其中所述聚焦控制装置包括折叠反射镜和可移动屋顶状部件。11. The lithographic apparatus of embodiment 10, wherein the focus control means comprises a folding mirror and a movable roof-like member.
12.根据实施例3所述的光刻设备,还包括在所述路径中的透镜,以将从所述第一透镜至所述第二透镜的所述束准直。12. The lithographic apparatus of embodiment 3, further comprising a lens in the path to collimate the beam from the first lens to the second lens.
13.根据实施例12所述的光刻设备,其中用于准直所述束的在所述路径中的透镜相对于所述调制器基本上是静止的。13. The lithographic apparatus of embodiment 12, wherein a lens in the path for collimating the beam is substantially stationary relative to the modulator.
14.根据实施例3,12和13中任一个所述的光刻设备,还包括在所述调制器和所述第一透镜之间的路径中的透镜,以朝向所述第一透镜聚焦所述多个束中的至少一个。14. The lithographic apparatus according to any one of embodiments 3, 12 and 13, further comprising a lens in the path between the modulator and the first lens to focus the at least one of the plurality of bundles.
15.根据实施例14所述的光刻设备,其中用于聚焦所述束的在所述路径中的透镜相对于所述调制器是基本上静止的。15. The lithographic apparatus of embodiment 14, wherein a lens in the path for focusing the beam is substantially stationary relative to the modulator.
16.根据实施例3和12-15中任一个所述的光刻设备,其中所述场透镜的光轴与所述成像透镜的光轴重合。16. The lithographic apparatus according to any one of embodiments 3 and 12-15, wherein the optical axis of the field lens coincides with the optical axis of the imaging lens.
17.根据实施例2所述的光刻设备,其中所述至少两个透镜中的第一透镜包括至少两个子透镜,其中所述多个束中的至少一个束在所述两个子透镜中间进行聚焦。17. The lithographic apparatus of embodiment 2, wherein a first lens of the at least two lenses comprises at least two sub-lenses, wherein at least one of the plurality of beams is transmitted between the two sub-lenses focus.
18.根据实施例17所述的光刻设备,其中所述至少两个子透镜中的每一个具有大致相等的焦距。18. The lithographic apparatus of embodiment 17, wherein each of the at least two sub-lenses has a substantially equal focal length.
19.根据实施例2,17和18中任一个所述的光刻设备,其中所述第一透镜被布置成朝向所述至少两个透镜中的第二透镜输出被准直的束。19. The lithographic apparatus according to any one of embodiments 2, 17 and 18, wherein the first lens is arranged to output a collimated beam towards a second lens of the at least two lenses.
20.根据实施例2和17-19中任一个所述的光刻设备,配置成以不同于所述至少两个透镜中的第二透镜的速度移动所述至少两个透镜中的第一透镜。20. The lithographic apparatus according to any one of embodiments 2 and 17-19, configured to move a first lens of said at least two lenses at a different speed than a second lens of said at least two lenses .
21.根据实施例20所述的光刻设备,其中所述第二透镜的速度是所述第一透镜的速度的两倍。21. The lithographic apparatus of embodiment 20, wherein the speed of the second lens is twice the speed of the first lens.
22.根据实施例1所述的光刻设备,其中每一透镜包括4f远心进/远心出的成像系统。22. The lithographic apparatus of
23.根据实施例22所述的光刻设备,其中所述4f远心进/远心出的成像系统包括至少6个透镜。23. The lithographic apparatus of embodiment 22, wherein the 4f telecentric-in/telecentric-out imaging system comprises at least 6 lenses.
24.根据实施例1所述的光刻设备,还包括在所述调制器和所述透镜阵列之间的消转仪。24. The lithographic apparatus of
25.根据实施例24所述的光刻设备,其中所述消转仪包括佩肯棱镜。25. The lithographic apparatus of embodiment 24, wherein the derotator comprises a Pechan prism.
26.根据实施例24或25所述的光刻设备,其中所述消转仪布置成以所述透镜阵列的速度的一半移动。26. The lithographic apparatus according to embodiment 24 or 25, wherein the derotator is arranged to move at half the speed of the lens array.
27.根据实施例24-26中任一个所述的光刻设备,还包括抛物面反射镜,以减小在所述调制器和所述消转仪之间的束的尺寸。27. The lithographic apparatus according to any one of embodiments 24-26, further comprising a parabolic mirror to reduce the size of the beam between the modulator and the derotator.
28.根据实施例24-27中任一个所述的光刻设备,还包括抛物面反射镜,以增加在所述消转仪和所述透镜阵列之间的束的尺寸。28. The lithographic apparatus according to any one of embodiments 24-27, further comprising a parabolic mirror to increase the size of the beam between the derotator and the lens array.
29.根据实施例1-28中任一个所述的光刻设备,其中所述透镜阵列相对于所述调制器旋转。29. The lithographic apparatus according to any one of embodiments 1-28, wherein the lens array rotates relative to the modulator.
30.根据实施例1-29中任一个所述的光刻设备,其中所述调制器包括用于发射电磁辐射的多个独立可控辐射源。30. The lithographic apparatus according to any one of embodiments 1-29, wherein the modulator comprises a plurality of independently controllable radiation sources for emitting electromagnetic radiation.
31.根据实施例1-29中任一个所述的光刻设备,其中所述调制器包括微反射镜阵列。31. The lithographic apparatus according to any one of embodiments 1-29, wherein the modulator comprises a micromirror array.
32.根据实施例1-29中任一个所述的光刻设备,其中所述调制器包括辐射源和声光调制器。32. The lithographic apparatus according to any one of embodiments 1-29, wherein the modulator comprises a radiation source and an acousto-optic modulator.
33.一种器件制造方法,包括步骤:33. A device manufacturing method, comprising the steps of:
提供根据期望的图案调制的多个束;和providing a plurality of beams modulated according to a desired pattern; and
使用接收所述多个束的透镜阵列将所述多个束投影到衬底上;和projecting the plurality of beams onto a substrate using a lens array that receives the plurality of beams; and
在所述投影期间,相对于所述束移动所述透镜阵列。During the projection, the lens array is moved relative to the beam.
34.根据实施例33所述的方法,其中每一透镜包括沿着从所述至少一个束的源至所述衬底的所述多个束中的至少一个束的束路径布置的至少两个透镜。34. The method of embodiment 33, wherein each lens comprises at least two lenses arranged along the beam path of at least one of the plurality of beams from the source of the at least one beam to the substrate. lens.
35.根据实施例34所述的方法,其中所述至少两个透镜中的第一透镜包括场透镜,所述至少两个透镜中的第二透镜包括成像透镜。35. The method of embodiment 34, wherein a first lens of the at least two lenses comprises a field lens and a second lens of the at least two lenses comprises an imaging lens.
36.根据实施例35所述的方法,其中所述场透镜的焦平面与所述成像透镜的后焦面重合。36. The method of embodiment 35, wherein a focal plane of the field lens coincides with a back focal plane of the imaging lens.
37.根据实施例35或36所述的方法,其中所述成像透镜包括双非球面透镜。37. The method of embodiment 35 or 36, wherein the imaging lens comprises a double aspherical lens.
38.根据实施例35-37中任一个所述的方法,其中所述场透镜的焦距使得所述成像透镜的场尺寸小于2至3°半角。38. The method of any one of embodiments 35-37, wherein the focal length of the field lens is such that the field size of the imaging lens is less than 2 to 3° half angle.
39.根据实施例35-38中任一个所述的方法,其中所述成像透镜的焦距使得对在所述衬底处的为0.2的NA,所述成像透镜不大于所述场透镜的直径。39. The method of any one of embodiments 35-38, wherein the imaging lens has a focal length such that for an NA at the substrate of 0.2, the imaging lens is no larger than a diameter of the field lens.
40.根据实施例39所述的方法,其中所述成像透镜的焦距等于所述场透镜的直径。40. The method of embodiment 39, wherein a focal length of the imaging lens is equal to a diameter of the field lens.
41.根据实施例35-40中任一个所述的方法,其中用所述场透镜和所述成像透镜的单一组合对多个所述束成像。41. The method of any one of embodiments 35-40, wherein a plurality of said beams are imaged with a single combination of said field lens and said imaging lens.
42.根据实施例35-41中任一个所述的方法,还包括使用在所述多个束中的至少一个束的源和所述场透镜之间的聚焦控制装置。42. The method of any one of embodiments 35-41, further comprising using a focus control device between a source of at least one of the plurality of beams and the field lens.
43.根据实施例42所述的方法,其中所述聚焦控制装置包括折叠反射镜和可移动的屋顶状部件。43. The method of embodiment 42, wherein the focus control device comprises a folding mirror and a movable roof-like member.
44.根据实施例35所述的方法,还包括使用透镜将在所述第一透镜和所述第二透镜之间的至少一个束准直。44. The method of embodiment 35, further comprising collimating at least one beam between the first lens and the second lens using a lens.
45.根据实施例44所述的方法,其中用于准直所述至少一个束的透镜相对于所述至少一个束基本上是静止的。45. The method of embodiment 44, wherein a lens for collimating the at least one beam is substantially stationary relative to the at least one beam.
46.根据实施例35,44和45中任一个所述的方法,还包括使用在所述至少一个束的源和所述第一透镜之间的路径中的透镜,朝向所述第一透镜聚焦所述多个束中的至少一个。46. The method of any one of embodiments 35, 44 and 45, further comprising focusing towards the first lens using a lens in the path between the source of the at least one beam and the first lens At least one of the plurality of bundles.
47.根据实施例46所述的方法,其中用于聚焦所述至少一个束的透镜相对于所述至少一个束是基本上静止的。47. The method of embodiment 46, wherein a lens for focusing the at least one beam is substantially stationary relative to the at least one beam.
48.根据实施例35和44-47中任一个所述的方法,其中所述场透镜的光轴与所述对应的成像透镜的光轴重合。48. The method of any one of embodiments 35 and 44-47, wherein an optical axis of the field lens coincides with an optical axis of the corresponding imaging lens.
49.根据实施例34所述的方法,其中所述至少两个透镜中的第一透镜包括至少两个子透镜,其中所述多个束中的至少一个束在所述两个子透镜中间进行聚焦。49. The method of embodiment 34, wherein a first lens of the at least two lenses comprises at least two sub-lenses, wherein at least one beam of the plurality of beams is focused intermediate the two sub-lenses.
50.根据实施例49所述的方法,其中所述至少两个子透镜中的每一个具有大致相等的焦距。50. The method of embodiment 49, wherein each of the at least two sub-lenses has an approximately equal focal length.
51.根据实施例34,49和50中任一个所述的方法,其中所述第一透镜被布置成朝向所述至少两个透镜中的第二透镜输出被准直的束。51. The method of any one of
52.根据实施例34和49-51中任一个所述的方法,包括以不同于所述至少两个透镜中的第二透镜的速度移动所述至少两个透镜中的第一透镜。52. The method of any one of embodiments 34 and 49-51, comprising moving a first lens of the at least two lenses at a different speed than a second lens of the at least two lenses.
53.根据实施例52所述的方法,其中所述第二透镜的速度是所述第一透镜的速度的两倍。53. The method of embodiment 52, wherein the speed of the second lens is twice the speed of the first lens.
54.根据实施例33所述的方法,其中每一透镜包括4f远心进/远心出的成像系统。54. The method of embodiment 33, wherein each lens comprises a 4f telecentric-in/telecentric-out imaging system.
55.根据实施例54所述的方法,其中所述4f远心进/远心出的成像系统包括至少6个透镜。55. The method of embodiment 54, wherein the 4f telecentric-in/telecentric-out imaging system comprises at least 6 lenses.
56.根据实施例33所述的方法,还包括使用在所述束的源和所述透镜阵列之间的消转仪对所述束进行消转。56. The method of embodiment 33, further comprising derotating the beam using a derotator between a source of the beam and the lens array.
57.根据实施例56所述的方法,其中所述消转仪包括佩肯棱镜。57. The method of embodiment 56, wherein the derotator comprises a Pechan prism.
58.根据实施例56或57所述的方法,包括以所述透镜阵列的速度的一半移动所述消转仪。58. The method of embodiment 56 or 57, comprising moving the derotator at half the speed of the lens array.
59.根据实施例56-58中任一个所述的方法,还包括使用抛物面反射镜减小在所述束的源和所述消转仪之间的束的尺寸。59. The method of any one of embodiments 56-58, further comprising reducing the size of the beam between the source of the beam and the derotator using a parabolic mirror.
60.根据实施例56-59中任一个所述的方法,还包括使用抛物面反射镜增加在所述消转仪和所述透镜阵列之间的束的尺寸。60. The method of any one of embodiments 56-59, further comprising using a parabolic mirror to increase the size of the beam between the derotator and the lens array.
61.根据实施例33-60中任一个所述的方法,包括相对于所述束旋转所述透镜阵列。61. The method of any one of embodiments 33-60, comprising rotating the lens array relative to the beam.
62.根据实施例33-61中任一个所述的方法,其中多个独立可控辐射源中的每一个发射所述多个束中的每一个。62. The method according to any one of embodiments 33-61, wherein each of the plurality of independently controllable radiation sources emits each of the plurality of beams.
63.根据实施例33-61中任一个所述的方法,其中微反射镜阵列发射多个束。63. The method according to any one of embodiments 33-61, wherein the array of micromirrors emits a plurality of beams.
64.根据实施例33-61中任一个所述的方法,其中辐射源和声光调制器产生所述多个束。64. The method according to any one of embodiments 33-61, wherein a radiation source and an acousto-optic modulator generate the plurality of beams.
65.一种光刻设备,包括:65. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括发射电磁辐射的多个独立可控辐射源,配置成使所述衬底的曝光区域由根据期望的图案调制的多个束进行曝光;和a modulator comprising a plurality of independently controllable radiation sources emitting electromagnetic radiation configured to expose an exposure region of the substrate by a plurality of beams modulated according to a desired pattern; and
投影系统,配置成将所调制的束投影到所述衬底上且包括接收所述多个束的透镜阵列,所述投影系统配置成在所述曝光区域的曝光期间相对于所述独立可控辐射源移动所述透镜阵列。a projection system configured to project the modulated beam onto the substrate and comprising an array of lenses receiving the plurality of beams, the projection system configured to be relatively independently controllable during exposure of the exposure region A radiation source moves the lens array.
66.一种器件制造方法,包括步骤:66. A device manufacturing method, comprising the steps of:
使用多个独立可控辐射源提供根据期望的图案调制的多个束;和using multiple independently controllable radiation sources to provide multiple beams modulated according to a desired pattern; and
使用接收所述多个束的透镜阵列将所述多个束投影到衬底上;和projecting the plurality of beams onto a substrate using a lens array that receives the plurality of beams; and
在所述投影期间相对于所述独立可控辐射源移动所述透镜阵列。The lens array is moved relative to the independently controllable radiation sources during the projection.
67.一种光刻设备,包括:67. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,配置成使所述衬底的曝光区域由根据期望的图案调制的多个束进行曝光;和a modulator configured to expose an exposed region of the substrate with a plurality of beams modulated according to a desired pattern; and
投影系统,配置成将所调制的束投影到衬底上且包括用于接收所述多个束的多个透镜阵列,所述阵列中的每一个独立地沿着所述多个束的束路径布置。a projection system configured to project the modulated beam onto a substrate and comprising a plurality of lens arrays for receiving the plurality of beams, each of the arrays independently following a beam path of the plurality of beams layout.
68.根据实施例67所述的光刻设备,其中所述投影系统配置成在所述曝光区域的曝光期间相对于所述调制器移动所述透镜阵列。68. The lithographic apparatus according to embodiment 67, wherein the projection system is configured to move the lens array relative to the modulator during exposure of the exposure region.
69.根据实施例67或68所述的光刻设备,其中每一阵列中的所述透镜布置在单个主体中。69. The lithographic apparatus according to embodiment 67 or 68, wherein the lenses in each array are arranged in a single body.
70.一种光刻设备,包括:70. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括发射电磁辐射的多个独立可控辐射源,配置成将所述衬底的曝光区域由根据期望的图案调制的多个束进行曝光,和配置成在所述曝光区域的曝光期间相对于所述曝光区域移动所述多个辐射源,使得仅少于全部所述多个辐射源的多个辐射源可以在任一时刻曝光所述曝光区域;和a modulator comprising a plurality of independently controllable radiation sources emitting electromagnetic radiation, configured to expose an exposure region of the substrate with a plurality of beams modulated according to a desired pattern, and configured to, during exposure of the exposure region moving the plurality of radiation sources relative to the exposure area such that less than all of the plurality of radiation sources can expose the exposure area at any one time; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
71.一种光刻设备,包括:71. A lithographic apparatus comprising:
多个独立可控辐射源,配置成提供根据期望的图案调制的多个束,所述多个辐射源中的至少一个辐射源在它发射辐射的位置和在它不发射辐射的位置之间是可移动的;a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern, at least one of the plurality of radiation sources being between a position where it emits radiation and a position where it does not emit radiation Movable;
衬底保持器,构造成保持衬底;和a substrate holder configured to hold a substrate; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
72.一种光刻设备,包括:72. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括用于发射电磁辐射的多个独立可控辐射源,配置成将所述衬底的曝光区域由根据期望的图案调制的多个束进行曝光,和配置成在所述曝光区域的曝光期间相对于所述曝光区域移动所述多个辐射源中的至少一个辐射源,使得来自所述至少一个辐射源的辐射在同一时刻与来自所述多个辐射源中的至少一个其它的辐射源的辐射邻接或重叠;和a modulator comprising a plurality of independently controllable radiation sources for emitting electromagnetic radiation, configured to expose an exposure region of the substrate with a plurality of beams modulated according to a desired pattern, and configured to moving at least one of the plurality of radiation sources relative to the exposure area during exposure such that radiation from the at least one radiation source is at the same time as radiation from at least one other of the plurality of radiation sources Radiation adjoining or overlapping of sources; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
73.一种光刻设备,包括:73. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,所述多个辐射源中的至少一个辐射源在它可以发射辐射至所述曝光区域的位置和它不发射辐射至所述曝光区域的位置之间是可移动的,和a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate, at least one radiation source of the plurality of radiation sources being capable of emitting radiation to the is movable between the position of the exposed area and a position where it does not emit radiation to said exposed area, and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
74.一种光刻设备,包括:74. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成在所述曝光区域的曝光期间相对于所述曝光区域移动所述多个辐射源,所述调制器具有至所述曝光区域的多个束的输出,所述输出具有小于所述多个辐射源的输出的面积的面积;和a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate, and configured during exposure of the exposure region relative to the exposure zone shifting the plurality of radiation sources, the modulator having an output of a plurality of beams to the exposure zone, the output having an area smaller than the area of the output of the plurality of radiation sources; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
75.一种光刻设备,包括:75. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源的阵列,配置成将根据期望的图案调制的多个束提供至所述衬底的各自的曝光区域,且配置成相对于其各自的曝光区域移动每一阵列,或相对于其各自的曝光区域移动来自每一阵列的所述多个束,或相对于所述各自的曝光区域移动所述阵列和所述多个束,其中在使用时多个阵列中的阵列的各自的曝光区域与所述多个阵列中的另一阵列的各自的曝光区域邻接或重叠;和A modulator comprising an array of a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to a respective exposure area of the substrate, and configured to move each beam relative to its respective exposure area. an array, or moving said plurality of beams from each array, or moving said array and said plurality of beams relative to said respective exposure area, wherein in use a plurality of arrays The respective exposure regions of the arrays in the arrays adjoin or overlap the respective exposure regions of another array of the plurality of arrays; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
76.一种光刻设备,包括:76. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个,或相对于所述曝光区域移动所述多个束,或相对于所述曝光区域移动所述多个辐射源中的每一个和所述多个束,其中在使用过程中所述辐射源中的每一个在其各自的功率/前向电流曲线的陡峭部分中进行操作;和a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region each of the plurality of radiation sources, or moving the plurality of beams relative to the exposure area, or moving each of the plurality of radiation sources and the plurality of beams relative to the exposure area, wherein during use the each of the aforementioned radiation sources operates in the steep portion of its respective power/forward current curve; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
77.一种光刻设备,包括:77. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个,或相对于所述曝光区域移动所述多个束,或相对于所述曝光区域移动所述多个辐射源中的每一个和所述多个束,其中所述独立可控辐射源中的每一个包括蓝紫激光二极管;和a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region each of, or moving the plurality of beams relative to the exposure area, or moving each of the plurality of radiation sources and the plurality of beams relative to the exposure area, wherein the independently controllable each of the radiation sources includes a blue-violet laser diode; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
78.一种光刻设备,包括:78. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个,所述多个辐射源布置在至少两个同心的圆形阵列中;和a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region each of, the plurality of radiation sources arranged in at least two concentric circular arrays; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
79.根据实施例78所述的光刻设备,其中所述圆形阵列中的至少一个圆形阵列被以交错的方式布置至所述圆形阵列中的至少一个其它的圆形阵列。79. The lithographic apparatus according to embodiment 78, wherein at least one of said circular arrays is arranged in a staggered manner to at least one other of said circular arrays.
80.一种光刻设备,包括:80. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个,所述多个辐射源围绕结构的中心布置,且所述结构具有在所述多个辐射源内的延伸通过所述结构的开口;和a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region Each of the plurality of radiation sources is disposed about a center of a structure, and the structure has an opening within the plurality of radiation sources extending through the structure; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
81.根据实施例80所述的光刻设备,还包括在所述辐射源处或所述辐射源的外部保持支撑结构的支撑件。81. The lithographic apparatus according to embodiment 80, further comprising a support holding a support structure at or outside the radiation source.
82.根据实施例81所述的光刻设备,其中所述支撑件包括允许所述结构移动的轴承。82. The lithographic apparatus of embodiment 81, wherein the support comprises a bearing that allows movement of the structure.
83.根据实施例81或82所述的光刻设备,其中所述支撑件包括移动所述结构的电机。83. The lithographic apparatus according to embodiment 81 or 82, wherein the support comprises a motor to move the structure.
84.一种光刻设备,包括:84. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个,所述多个辐射源围绕结构的中心布置;a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region each of, the plurality of radiation sources arranged around the center of the structure;
支撑件,用于在所述辐射源处或所述辐射源的外部支撑所述结构,所述结构配置成旋转所述结构或允许旋转所述结构;和a support for supporting the structure at or external to the radiation source, the structure configured to rotate or allow rotation of the structure; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
85.根据实施例84所述的光刻设备,其中所述支撑件包括允许旋转所述结构的轴承。85. The lithographic apparatus according to embodiment 84, wherein the support comprises a bearing allowing rotation of the structure.
86.根据实施例84或85所述的光刻设备,其中所述支撑件包括旋转所述结构的电机。86. The lithographic apparatus according to embodiment 84 or 85, wherein the support comprises a motor that rotates the structure.
87.一种光刻设备,包括:87. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个,所述多个辐射源布置在可移动结构上,所述可移动结构又布置在可移动板上;和a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region Each of the plurality of radiation sources is disposed on a movable structure that is in turn disposed on a movable plate; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
88.根据实施例87所述的光刻设备,其中所述可移动结构是可旋转的。88. The lithographic apparatus according to embodiment 87, wherein the movable structure is rotatable.
89.根据实施例87或88所述的光刻设备,其中所述可移动板是可旋转的。89. The lithographic apparatus according to embodiment 87 or 88, wherein the movable plate is rotatable.
90.根据实施例89所述的光刻设备,其中所述可移动板的旋转中心不与所述可移动结构的旋转中心重合。90. The lithographic apparatus according to embodiment 89, wherein the center of rotation of the movable plate does not coincide with the center of rotation of the movable structure.
91.一种光刻设备,包括:91. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个,所述多个辐射源布置在可移动结构中或可移动结构上;a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region Each of the plurality of radiation sources is disposed in or on a movable structure;
流体通道,布置在所述可移动结构中,以提供温度控制流体至至少邻近所述多个辐射源的位置;和a fluid channel disposed in the movable structure to provide a temperature control fluid to a location at least adjacent to the plurality of radiation sources; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
92.根据实施例91所述的光刻设备,还包括位于所述可移动结构中或可移动结构上的传感器。92. The lithographic apparatus of embodiment 91, further comprising a sensor located in or on the movable structure.
93.根据实施例91或92所述的光刻设备,还包括传感器,所述传感器位于邻近所述多个辐射源中的至少一个辐射源的位置但不在所述可移动结构中或所述可移动结构上。93. The lithographic apparatus according to embodiment 91 or 92, further comprising a sensor located adjacent to at least one radiation source of the plurality of radiation sources but not in the movable structure or the movable structure. mobile structure.
94.根据实施例92或93所述的光刻设备,其中所述传感器包括温度传感器。94. The lithographic apparatus according to embodiment 92 or 93, wherein the sensor comprises a temperature sensor.
95.根据实施例92-94中任一个所述的光刻设备,其中所述传感器包括配置成测量所述结构的膨胀和/或收缩的传感器。95. The lithographic apparatus according to any one of embodiments 92-94, wherein the sensor comprises a sensor configured to measure expansion and/or contraction of the structure.
96.一种光刻设备,包括:96. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个,所述多个辐射源布置在可移动结构中或可移动结构上;a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region Each of the plurality of radiation sources is disposed in or on a movable structure;
散热片,所述散热片布置在所述可移动结构中或可移动结构上,以提供对所述结构的温度控制;和cooling fins disposed in or on the movable structure to provide temperature control of the structure; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
97.根据实施例96所述的光刻设备,还包括静止的散热片,以与所述可移动结构中或可移动结构上的散热片配合。97. The lithographic apparatus of embodiment 96, further comprising a stationary heat sink to cooperate with a heat sink in or on the movable structure.
98.根据实施例97所述的光刻设备,包括在所述可移动结构中或在可移动结构上的至少两个散热片,所述静止的散热片位于所述可移动结构中或可移动结构上的所述散热片中的至少一个散热片与所述可移动结构中或所述可移动结构上的所述散热片中的至少一个其它散热片之间。98. The lithographic apparatus of embodiment 97, comprising at least two heat sinks in or on the movable structure, the stationary heat sink in or movable Between at least one of the cooling fins on the structure and at least one other of the cooling fins in or on the movable structure.
99.一种光刻设备,包括:99. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个,所述多个辐射源布置在可移动结构中或可移动结构上;a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region Each of the plurality of radiation sources is disposed in or on a movable structure;
流体供给装置,配置成供给流体至所述结构的外表面,以控制所述结构的温度;和a fluid supply configured to supply fluid to an exterior surface of the structure to control the temperature of the structure; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
100.根据实施例99所述的光刻设备,其中所述流体供给装置配置成供给气体。100. The lithographic apparatus according to embodiment 99, wherein the fluid supply is configured to supply a gas.
101.根据实施例99所述的光刻设备,其中所述流体供给装置配置成供给液体。101. The lithographic apparatus according to embodiment 99, wherein the fluid supply is configured to supply a liquid.
102.根据实施例101所述的光刻设备,还包括流体限制结构,配置成保持所述液体与所述结构接触。102. The lithographic apparatus according to embodiment 101, further comprising a fluid confinement structure configured to maintain the liquid in contact with the structure.
103.根据实施例102所述的光刻设备,其中所述流体限制结构配置成保持所述结构与所述流体限制结构之间的密封。103. The lithographic apparatus according to
104.一种光刻设备,包括:104. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个;a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region each of
结构上独立的透镜,所述透镜连接在所述多个辐射源中的每一个辐射源附近或连接至所述多个辐射源中的每一个辐射源,且能够随各自的辐射源移动。A structurally independent lens attached adjacent to or connected to each of the plurality of radiation sources and movable with the respective radiation source.
105.根据实施例104所述的光刻设备,还包括致动器,所述致动器配置成相对于其各自的辐射源来使透镜移位。105. The lithographic apparatus according to
106.根据实施例104或105所述的光刻设备,还包括致动器,所述致动器配置成相对于支撑所述透镜的结构和其各自的辐射源来使透镜和其各自的辐射源移位。106. The lithographic apparatus according to
107.根据实施例105或106所述的光刻设备,其中所述致动器配置成在高达3个自由度上移动所述透镜。107. The lithographic apparatus according to
108.根据实施例104-107中任一个所述的光刻设备,还包括所述多个辐射源中的至少一个辐射源的下游的孔阑结构。108. The lithographic apparatus according to any one of embodiments 104-107, further comprising an aperture structure downstream of at least one radiation source of the plurality of radiation sources.
109.根据实施例104-107中任一个所述的光刻设备,其中用高热导率材料将所述透镜连接至支撑所述透镜的结构和其各自的辐射源。109. The lithographic apparatus according to any one of embodiments 104-107, wherein the lens is attached to a structure supporting the lens and its respective radiation source with a material of high thermal conductivity.
110.一种光刻设备,包括:110. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个;a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region each of
空间相干性破坏装置,配置成扰乱来自所述多个辐射源中的至少一个辐射源的辐射;和a spatial coherence breaking device configured to disrupt radiation from at least one radiation source of the plurality of radiation sources; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
111.根据实施例110所述的光刻设备,其中所述空间相干性破坏装置包括静止的板,所述至少一个辐射源相对于所述板是可移动的。111. The lithographic apparatus according to
112.根据实施例110所述的光刻设备,其中所述空间相干性破坏装置包括从下述装置中选出的至少一个:相位调制器、旋转板或振动板。112. The lithographic apparatus according to
113.一种光刻设备,包括:113. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个;a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region each of
传感器,配置成测量与所述多个辐射源中的至少一个辐射源相关的聚焦,所述传感器的至少一部分在所述至少一个辐射源中或所述至少一个辐射源上;和a sensor configured to measure focus associated with at least one radiation source of the plurality of radiation sources, at least a portion of the sensor being in or on the at least one radiation source; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
114.根据实施例113所述的光刻设备,其中所述传感器配置成单独测量与所述辐射源的每一个相关的聚焦。114. The lithographic apparatus according to embodiment 113, wherein the sensor is configured to measure focus associated with each of the radiation sources individually.
115.根据实施例113或114所述的光刻设备,其中所述传感器是刀口聚焦检测器。115. The lithographic apparatus according to
116.一种光刻设备,包括:116. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个;a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region each of
发送器,配置成无线地发送信号和/或功率至所述多个辐射源,以分别控制所述多个辐射源和/或对所述多个辐射源供电;和a transmitter configured to wirelessly transmit signals and/or power to the plurality of radiation sources to control and/or power the plurality of radiation sources, respectively; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
117.根据实施例116所述的光刻设备,其中所述信号包括多个信号,且还包括多路分解器,以朝向各自的辐射源发送所述多个信号中的每一个信号。117. The lithographic apparatus according to
118.一种光刻设备,包括:118. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个,所述多个辐射源布置在可移动结构中或可移动结构上;a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region Each of the plurality of radiation sources is disposed in or on a movable structure;
单条线,用于将控制器连接至所述可移动结构,以将多个信号和/或功率发送至所述多个辐射源,以分别控制所述多个辐射源和/或对其进行供电;和a single wire for connecting a controller to said movable structure for sending a plurality of signals and/or power to said plurality of radiation sources for controlling and/or powering said plurality of radiation sources respectively ;and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
119.根据实施例118所述的光刻设备,其中所述信号包括多个信号,且还包括多路分解器,以朝向各自的辐射源发送所述多个信号中的每一个信号。119. The lithographic apparatus according to embodiment 118, wherein the signal comprises a plurality of signals, and further comprising a demultiplexer to route each signal of the plurality of signals towards a respective radiation source.
120.根据实施例118或119所述的光刻设备,其中所述线包括光学线。120. The lithographic apparatus according to embodiment 118 or 119, wherein the wires comprise optical wires.
121.一种光刻设备,包括:121. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个;a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region each of
传感器,测量由所述多个辐射源中的至少一个辐射源朝向所述衬底发射或将要发射的辐射的特性;和a sensor measuring a characteristic of radiation emitted or to be emitted towards the substrate by at least one radiation source of the plurality of radiation sources; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
122.根据实施例121所述的光刻设备,其中所述传感器的至少一部分位于所述衬底保持器中或所述衬底保持器上。122. The lithographic apparatus according to embodiment 121, wherein at least a portion of the sensor is located in or on the substrate holder.
123.根据实施例122所述的光刻设备,其中所述传感器的所述至少一部分位于所述衬底保持器中或所述衬底保持器上并且在所述衬底被支撑在所述衬底保持器上所处的区域的外部的一位置处。123. The lithographic apparatus according to embodiment 122, wherein the at least a portion of the sensor is located in or on the substrate holder and the substrate is supported on the substrate at a location outside of the area on the bottom holder.
124.根据实施例121-123中任一个所述的光刻设备,其中所述传感器的至少一部分位于所述衬底的一侧,其在使用时基本上沿着所述衬底的扫描方向延伸。124. The lithographic apparatus according to any one of embodiments 121-123, wherein at least part of the sensor is located on a side of the substrate which, in use, extends substantially along the scan direction of the substrate .
125.根据实施例121-124中任一个所述的光刻设备,其中所述传感器的至少一部分安装在支撑所述可移动结构的框架中或框架上。125. The lithographic apparatus according to any one of embodiments 121-124, wherein at least a portion of the sensor is mounted in or on a frame supporting the movable structure.
126.根据实施例121-125中任一个所述的光刻设备,其中所述传感器配置成测量来自所述曝光区域外的所述至少一个辐射源的辐射。126. The lithographic apparatus according to any one of embodiments 121-125, wherein the sensor is configured to measure radiation from the at least one radiation source outside the exposure region.
127.根据实施例121-126中任一个所述的光刻设备,其中所述传感器的至少一部分是可移动的。127. The lithographic apparatus according to any one of embodiments 121-126, wherein at least a part of the sensor is movable.
128.根据实施例121-127中任一个所述的光刻设备,还包括控制器,所述控制器配置成基于所述传感器的结果来校准所述至少一个辐射源。128. The lithographic apparatus according to any one of embodiments 121-127, further comprising a controller configured to calibrate the at least one radiation source based on results of the sensor.
129.一种光刻设备,包括:129. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个,所述多个辐射源布置在可移动结构中或可移动结构上;a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region Each of the plurality of radiation sources is disposed in or on a movable structure;
传感器,用于测量所述可移动结构的位置;和a sensor for measuring the position of the movable structure; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
130.根据实施例129所述的光刻设备,其中所述传感器的至少一部分安装在支撑所述可移动结构的框架中或框架上。130. The lithographic apparatus according to embodiment 129, wherein at least a portion of the sensor is mounted in or on a frame supporting the movable structure.
131.一种光刻设备,包括:131. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个,所述多个辐射源中的每一个具有识别标志或提供识别标志;a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region Each of the plurality of radiation sources has or provides identification;
传感器,配置成检测所述识别标志;和a sensor configured to detect said signature; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
132.根据实施例131所述的光刻设备,其中所述传感器的至少一部分安装在支撑所述多个辐射源的框架中或框架上。132. The lithographic apparatus according to embodiment 131, wherein at least a portion of the sensor is mounted in or on a frame supporting the plurality of radiation sources.
133.根据实施例131或132所述的光刻设备,其中所述识别标志包括来自各自的辐射源的辐射频率。133. The lithographic apparatus according to embodiment 131 or 132, wherein the signatures comprise radiation frequencies from respective radiation sources.
134.根据实施例131-133中任一个所述的光刻设备,其中所述识别标志包括从下述中选择的至少一个:条码、标记或射频识别标志。134. The lithographic apparatus according to any one of embodiments 131-133, wherein the identification mark comprises at least one selected from: a barcode, a label, or a radio frequency identification mark.
135.一种光刻设备,包括:135. A lithographic apparatus comprising:
衬底保持器,构造成保持衬底;a substrate holder configured to hold a substrate;
调制器,包括多个独立可控辐射源,配置成将根据期望的图案调制的多个束提供至所述衬底的曝光区域,且配置成相对于所述曝光区域移动所述多个辐射源中的每一个;a modulator comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern to an exposure region of the substrate and configured to move the plurality of radiation sources relative to the exposure region each of
传感器,配置成检测被所述衬底改向的、来自所述多个辐射源中的至少一个辐射源的辐射;和a sensor configured to detect radiation from at least one of the plurality of radiation sources redirected by the substrate; and
投影系统,配置成将所调制的束投影到所述衬底上。a projection system configured to project the modulated beam onto the substrate.
136.根据实施例135所述的光刻设备,其中所述传感器配置成根据所述改向的辐射来确定入射到所述衬底上的来自所述至少一个辐射源的所述辐射的斑的位置。136. The lithographic apparatus according to embodiment 135, wherein the sensor is configured to determine from the redirected radiation the magnitude of the spot of radiation from the at least one radiation source incident on the substrate Location.
137.根据实施例70-136中任一个所述的光刻设备,其中所述调制器配置成围绕基本上平行于所述多个束的传播方向的轴线旋转至少一个辐射源。137. The lithographic apparatus according to any one of embodiments 70-136, wherein the modulator is configured to rotate at least one radiation source about an axis substantially parallel to a direction of propagation of the plurality of beams.
138.根据实施例70-137中任一个所述的光刻设备,其中所述调制器配置成沿着横向于所述多个束的传播方向的方向平移至少一个辐射源。138. The lithographic apparatus according to any one of embodiments 70-137, wherein the modulator is configured to translate at least one radiation source in a direction transverse to the direction of propagation of the plurality of beams.
139.根据实施例70-138中任一个所述的光刻设备,其中所述调制器包括配置成移动所述多个束的束偏转器。139. The lithographic apparatus according to any one of embodiments 70-138, wherein the modulator comprises a beam deflector configured to move the plurality of beams.
140.根据实施例139所述的光刻设备,其中所述束偏转器是从由下述部件构成的组中选出的:反射镜、棱镜和声光调制器。140. The lithographic apparatus according to embodiment 139, wherein the beam deflector is selected from the group consisting of: a mirror, a prism, and an acousto-optic modulator.
141.根据实施例139所述的光刻设备,其中所述束偏转器包括多边形件。141. The lithographic apparatus according to embodiment 139, wherein the beam deflector comprises a polygon.
142.根据实施例139所述的光刻设备,其中所述束偏转器配置成振动。142. The lithographic apparatus according to embodiment 139, wherein the beam deflector is configured to vibrate.
143.根据实施例139所述的光刻设备,其中所述束偏转器配置成旋转。143. The lithographic apparatus according to embodiment 139, wherein the beam deflector is configured to rotate.
144.根据实施例70-143中任一个所述的光刻设备,其中所述衬底保持器配置成沿着设置所述多个束的方向移动所述衬底。144. The lithographic apparatus according to any one of embodiments 70-143, wherein the substrate holder is configured to move the substrate in a direction in which the plurality of beams are disposed.
145.根据实施例144所述的光刻设备,其中所述衬底的移动是旋转。145. The lithographic apparatus of embodiment 144, wherein the movement of the substrate is rotation.
146.根据实施例70-145中任一个所述的光刻设备,其中所述多个辐射源是能够一起移动的。146. The lithographic apparatus according to any one of embodiments 70-145, wherein the plurality of radiation sources are movable together.
147.根据实施例70-146中任一个所述的光刻设备,其中所述多个辐射源以圆形方式布置。147. The lithographic apparatus according to any one of embodiments 70-146, wherein the plurality of radiation sources are arranged in a circular fashion.
148.根据实施例70-147中任一个所述的光刻设备,其中所述多个辐射源布置在板中且彼此间隔开。148. The lithographic apparatus according to any one of embodiments 70-147, wherein the plurality of radiation sources are arranged in a plate and spaced apart from each other.
149.根据实施例70-148中任一个所述的光刻设备,其中所述投影系统包括透镜阵列。149. The lithographic apparatus according to any one of embodiments 70-148, wherein the projection system comprises a lens array.
150.根据实施例70-149中任一个所述的光刻设备,其中所述投影系统实质上由透镜阵列构成。150. The lithographic apparatus according to any one of embodiments 70-149, wherein the projection system consists essentially of an array of lenses.
151.根据实施例149或150所述的光刻设备,其中所述透镜阵列的透镜具有高的数值孔径,所述光刻设备配置成使得所述衬底处在与所述透镜相关的辐射的聚焦位置的外面,以有效地降低所述透镜的数值孔径。151. The lithographic apparatus according to
152.根据实施例70-151中任一个所述的光刻设备,其中所述辐射源中的每一个包括激光二极管。152. The lithographic apparatus according to any one of embodiments 70-151, wherein each of said radiation sources comprises a laser diode.
153.根据实施例152所述的光刻设备,其中每一激光二极管配置成发射具有约405nm的波长的辐射。153. The lithographic apparatus according to embodiment 152, wherein each laser diode is configured to emit radiation having a wavelength of about 405 nm.
154.根据实施例70-153中任一个所述的光刻设备,还包括温度控制器,所述温度控制器配置成在曝光期间将所述多个辐射源保持在大致恒定的温度。154. The lithographic apparatus according to any one of embodiments 70-153, further comprising a temperature controller configured to maintain the plurality of radiation sources at a substantially constant temperature during exposure.
155.根据实施例154所述的光刻设备,其中所述控制器配置成在曝光之前将所述多个辐射源加热至处于所述大致恒定的温度的温度或接近所述大致恒定的温度的温度。155. The lithographic apparatus according to embodiment 154, wherein the controller is configured to heat the plurality of radiation sources to a temperature at or near the substantially constant temperature prior to exposure temperature.
156.根据实施例70-155中任一个所述的光刻设备,包括沿着一方向布置的至少3个独立的阵列,所述阵列中每一个包括多个辐射源。156. The lithographic apparatus according to any one of embodiments 70-155, comprising at least 3 separate arrays arranged along a direction, each of said arrays comprising a plurality of radiation sources.
157.根据实施例70-156中任一个所述的光刻设备,其中所述多个辐射源包括至少约1200个辐射源。157. The lithographic apparatus according to any one of embodiments 70-156, wherein the plurality of radiation sources comprises at least about 1200 radiation sources.
158.根据实施例70-157中任一个所述的光刻设备,还包括对准传感器,用于确定所述多个辐射源中的至少一个辐射源与所述衬底之间的对准。158. The lithographic apparatus according to any one of embodiments 70-157, further comprising an alignment sensor for determining alignment between at least one radiation source of the plurality of radiation sources and the substrate.
159.根据实施例70-158中任一个所述的光刻设备,还包括水平传感器,用于确定所述衬底相对于所述多个束中的至少一个束的聚焦位置的位置。159. The lithographic apparatus according to any one of embodiments 70-158, further comprising a level sensor for determining a position of the substrate relative to a focus position of at least one of the plurality of beams.
160.根据实施例158或159所述的光刻设备,还包括控制器,所述控制器配置成基于对准传感器的结果和/或水平传感器的结果改变所述图案。160. The lithographic apparatus according to embodiment 158 or 159, further comprising a controller configured to change the pattern based on results of an alignment sensor and/or results of a level sensor.
161.根据实施例70-160中任一个所述的光刻设备,还包括控制器,所述控制器配置成基于所述多个辐射源中的至少一个辐射源的温度的测量或与所述多个辐射源中的至少一个辐射源相关的温度的测量来改变所述图案。161. The lithographic apparatus according to any one of embodiments 70-160, further comprising a controller configured to measure the temperature of at least one of the plurality of radiation sources based on or in connection with the The pattern is altered by measuring a temperature associated with at least one of the plurality of radiation sources.
162.根据实施例70-161中任一个所述的光刻设备,还包括传感器,用于测量由所述多个辐射源中的至少一个辐射源被朝向所述衬底发射或将被发射的辐射的特性。162. The lithographic apparatus according to any one of embodiments 70-161, further comprising a sensor for measuring radiation emitted or to be emitted towards the substrate by at least one radiation source of the plurality of radiation sources properties of radiation.
163.一种光刻设备,包括:163. A lithographic apparatus comprising:
多个独立可控辐射源,配置成提供根据期望的图案调制的多个束;a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern;
透镜阵列,包括多个小透镜;和a lens array comprising a plurality of lenslets; and
衬底保持器,构造成保持衬底,a substrate holder configured to hold a substrate,
其中在使用期间,除了所述透镜阵列之外,在所述多个辐射源和所述衬底之间没有其它光学装置。Wherein during use, apart from the lens array, there are no other optical means between the plurality of radiation sources and the substrate.
164.一种可编程图案形成装置,包括:164. A programmable patterning device comprising:
衬底,在所述衬底上具有沿至少一个方向间隔开的发射辐射二极管的阵列;和a substrate having thereon an array of radiation-emitting diodes spaced along at least one direction; and
透镜阵列,在所述发射辐射二极管的辐射下游侧处。a lens array at the radiation downstream side of the radiation emitting diodes.
165.根据实施例164所述的可编程图案形成装置,其中所述透镜阵列包括具有多个微透镜的微透镜阵列,所述微透镜的数量对应于发射辐射二极管的数量,且被定位以将选择性地穿过所述发射辐射二极管中的各自的发射辐射二极管的辐射聚焦成为微斑阵列。165. The programmable patterning device of embodiment 164, wherein the lens array comprises a microlens array having a number of microlenses corresponding to the number of radiation emitting diodes positioned to Radiation selectively passing through respective ones of the radiation emitting diodes is focused into an array of microspots.
166.根据实施例164或165所述的可编程图案形成装置,其中所述发射辐射二极管沿着至少两个正交的方向间隔开。166. The programmable patterning device of embodiment 164 or 165, wherein the radiation emitting diodes are spaced apart along at least two orthogonal directions.
167.根据实施例164-166中任一个所述的可编程图案形成装置,其中所述发射辐射二极管嵌入在具有低热导率的材料中。167. The programmable patterning device according to any one of embodiments 164-166, wherein the radiation emitting diodes are embedded in a material having low thermal conductivity.
168.一种器件制造方法,包括步骤:168. A device manufacturing method comprising the steps of:
使用多个独立可控辐射源朝向衬底的曝光区域提供根据期望的图案调制的多个束;using a plurality of independently controllable radiation sources to provide a plurality of beams modulated according to a desired pattern towards an exposure region of the substrate;
在提供所述多个束的同时移动所述多个辐射源中的至少一个,使得仅少于全部所述多个辐射源的多个辐射源可以在任一时刻曝光所述曝光区域;和moving at least one of the plurality of radiation sources while providing the plurality of beams such that less than all of the plurality of radiation sources can expose the exposure region at any one time; and
将所述多个束投影到所述衬底上。The plurality of beams are projected onto the substrate.
169.一种器件制造方法,包括步骤:169. A device manufacturing method comprising the steps of:
使用多个独立可控辐射源来提供根据期望的图案调制的多个束;using multiple independently controllable radiation sources to provide multiple beams modulated according to a desired pattern;
在它发射辐射的位置和它不发射辐射的位置之间移动所述多个辐射源中的至少一个;和moving at least one of the plurality of radiation sources between a position where it emits radiation and a position where it does not emit radiation; and
将所述多个束投影到所述衬底上。The plurality of beams are projected onto the substrate.
170.一种器件制造方法,包括使用多个独立可控辐射源提供根据期望的图案调制的束,且仅使用透镜阵列将来自所述多个独立可控辐射源的调制的束投影至衬底。170. A method of device fabrication comprising using a plurality of independently controllable radiation sources to provide beams modulated according to a desired pattern, and projecting the modulated beams from the plurality of independently controllable radiation sources onto a substrate using only a lens array .
171.一种器件制造方法,包括步骤:171. A device manufacturing method comprising the steps of:
使用多个独立可控辐射源提供根据期望的图案调制的多个电磁辐射束;using multiple independently controllable radiation sources to provide multiple beams of electromagnetic radiation modulated according to a desired pattern;
在曝光区域的曝光期间相对于所述曝光区域移动所述多个辐射源中的至少一个辐射源,使得来自所述至少一个辐射源的辐射在同一时刻与来自所述多个辐射源中的至少一个其它辐射源的辐射邻接或重叠;和At least one radiation source of the plurality of radiation sources is moved relative to the exposure region during exposure of the exposure region such that radiation from the at least one radiation source is at the same time as radiation from at least one of the plurality of radiation sources Contiguous or overlapping radiation from one other radiation source; and
将所述多个束投影到衬底上。The plurality of beams is projected onto a substrate.
172.根据实施例168-171中任一个所述的方法,其中移动步骤包括围绕基本上平行于所述多个束的传播方向的轴线旋转至少一个辐射源。172. The method according to any one of embodiments 168-171, wherein the step of moving comprises rotating at least one radiation source about an axis substantially parallel to the direction of propagation of the plurality of beams.
173.根据实施例168-172中任一个所述的方法,其中移动步骤包括沿着横向于所述多个束的传播方向的方向平移至少一个辐射源。173. The method according to any one of embodiments 168-172, wherein the step of moving comprises translating at least one radiation source in a direction transverse to the direction of propagation of the plurality of beams.
174.根据实施例168-173中任一个所述的方法,包括通过使用束偏转器移动所述多个束。174. The method according to any one of embodiments 168-173, comprising moving the plurality of beams by using a beam deflector.
175.根据实施例174所述的方法,其中所述束偏转器是由下述部件构成的组中选出的:反射镜、棱镜和声光调制器。175. The method of
176.根据实施例174所述的方法,其中所述束偏转器包括多边形件。176. The method of
177.根据实施例174所述的方法,其中所述束偏转器配置成振动。177. The method of
178.根据实施例174所述的方法,其中所述束偏转器配置成旋转。178. The method of
179.根据实施例168-178中任一个所述的方法,包括使所述衬底沿着所述多个束被设置所在的方向运动。179. The method according to any one of embodiments 168-178, comprising moving the substrate in a direction in which the plurality of beams are arranged.
180.根据实施例179所述的方法,其中所述衬底的运动是旋转。180. The method of embodiment 179, wherein the motion of the substrate is rotation.
181.根据实施例168-180中任一个所述的方法,包括一起移动所述多个辐射源。181. The method according to any one of embodiments 168-180, comprising moving the plurality of radiation sources together.
182.根据实施例168-181中任一个所述的方法,其中所述多个辐射源以圆形方式布置。182. The method according to any one of embodiments 168-181, wherein the plurality of radiation sources are arranged in a circular fashion.
183.根据实施例168-182中任一个所述的方法,其中所述多个辐射源布置在板中且彼此间隔开。183. The method according to any one of embodiments 168-182, wherein the plurality of radiation sources are arranged in a plate and spaced apart from each other.
184.根据实施例168-183中任一个所述的方法,其中所述投影步骤包括通过使用透镜阵列将所述束中的每个束的图像形成在所述衬底上。184. The method according to any one of embodiments 168-183, wherein the step of projecting comprises forming an image of each of the beams on the substrate by using a lens array.
185.根据实施例168-184中任一个所述的方法,其中所述投影步骤包括实质上仅使用透镜阵列将所述束中的每个束的图像形成在所述衬底上。185. The method according to any one of embodiments 168-184, wherein said step of projecting comprises forming an image of each of said beams on said substrate using substantially only a lens array.
186.根据实施例168-185中任一个所述的方法,其中所述辐射源中的每个包括激光二极管。186. The method according to any one of embodiments 168-185, wherein each of said radiation sources comprises a laser diode.
187.根据实施例186所述的方法,其中每个激光二极管配置成发射具有约405nm的波长的辐射。187. The method of embodiment 186, wherein each laser diode is configured to emit radiation having a wavelength of about 405 nm.
188.一种根据实施例168-187中任一个所述的方法制造的平板显示器。188. A flat panel display manufactured according to the method of any one of embodiments 168-187.
189.一种根据实施例168-187中任一个所述的方法制造的集成电路器件。189. An integrated circuit device fabricated according to the method of any one of embodiments 168-187.
190.一种辐射系统,包括:190. A radiation system comprising:
多个可移动的辐射阵列,每个辐射阵列包括多个独立可控辐射源,所述多个独立可控辐射源配置成提供根据期望的图案调制的多个束;和a plurality of movable radiation arrays, each radiation array comprising a plurality of independently controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern; and
电机,配置成移动所述辐射阵列中的每一个。a motor configured to move each of the radiating arrays.
191.根据实施例190所述的辐射系统,其中所述电机配置成围绕基本上平行于所述多个束的传播方向的轴线旋转所述辐射阵列中的每一个。191. The radiation system of embodiment 190, wherein the motor is configured to rotate each of the radiation arrays about an axis substantially parallel to the direction of propagation of the plurality of beams.
192.根据实施例190或191所述的辐射系统,其中所述电机配置成沿着横向于所述多个束的传播方向的方向平移所述辐射阵列中的每一个。192. The radiation system of embodiment 190 or 191, wherein the motor is configured to translate each of the radiation arrays in a direction transverse to the direction of propagation of the plurality of beams.
193.根据实施例190-192中任一个所述的辐射系统,还包括束偏转器,所述束偏转器配置成移动所述多个束。193. The radiation system according to any one of embodiments 190-192, further comprising a beam deflector configured to move the plurality of beams.
194.根据实施例193所述的辐射系统,其中所述束偏转器是由下述部件构成的组中选出的:反射镜、棱镜和声光调制器。194. The radiation system of embodiment 193, wherein the beam deflector is selected from the group consisting of: mirrors, prisms, and acousto-optic modulators.
195.根据实施例193所述的辐射系统,其中所述束偏转器包括多边形件。195. The radiation system of embodiment 193, wherein the beam deflector comprises a polygon.
196.根据实施例193所述的辐射系统,其中所述束偏转器配置成振动。196. The radiation system of embodiment 193, wherein the beam deflector is configured to vibrate.
197.根据实施例193所述的辐射系统,其中所述束偏转器配置成旋转。197. The radiation system of embodiment 193, wherein the beam deflector is configured to rotate.
198.根据实施例190-197中任一个所述的辐射系统,其中所述辐射阵列中的每一辐射阵列的多个辐射源能够一起移动。198. The radiation system according to any one of embodiments 190-197, wherein the plurality of radiation sources of each of the radiation arrays are movable together.
199.根据实施例190-198中任一个所述的辐射系统,其中所述辐射阵列中的每一辐射阵列的多个辐射源被以圆形方式布置。199. The radiation system according to any one of embodiments 190-198, wherein the plurality of radiation sources of each of the radiation arrays are arranged in a circular fashion.
200.根据实施例190-199中任一个所述的辐射系统,其中所述辐射阵列中的每一辐射阵列的所述多个辐射源布置在板中且彼此间隔开。200. The radiation system according to any one of embodiments 190-199, wherein the plurality of radiation sources of each of the radiation arrays are arranged in a plate and spaced apart from each other.
201.根据实施例190-200中任一个所述的辐射系统,还包括与所述辐射阵列中的每一辐射阵列相关联的透镜阵列。201. The radiation system according to any one of embodiments 190-200, further comprising a lens array associated with each of said radiation arrays.
202.根据实施例201所述的辐射系统,其中所述辐射阵列中的每一辐射阵列的所述多个辐射源中的每一个与同所述辐射阵列相关联的透镜阵列中的透镜相关联。202. The radiation system of embodiment 201, wherein each of the plurality of radiation sources of each of the radiation arrays is associated with a lens in the lens array associated with the radiation array .
203.根据实施例190-202中任一个所述的辐射系统,其中所述辐射阵列中的每一辐射阵列的多个源中的每一个源包括激光二极管。203. The radiation system according to any one of embodiments 190-202, wherein each of the plurality of sources of each of the radiation arrays comprises a laser diode.
204.根据实施例203所述的辐射系统,其中每一激光二极管配置成发射具有约405nm的波长的辐射。204. The radiation system of embodiment 203, wherein each laser diode is configured to emit radiation having a wavelength of about 405 nm.
205.一种用于将衬底以辐射曝光的光刻设备,所述光刻设备包括具有100-25000个自发射式独立可寻址元件的可编程图案形成装置。205. A lithographic apparatus for exposing a substrate to radiation, the lithographic apparatus comprising a programmable patterning device having 100-25000 self-emissive individually addressable elements.
206.根据实施例205所述的光刻设备,包括至少400个自发射式独立可寻址元件。206. The lithographic apparatus of embodiment 205 comprising at least 400 self-emissive individually addressable elements.
207.根据实施例205所述的光刻设备,包括至少1000个自发射式独立可寻址元件。207. The lithographic apparatus of embodiment 205 comprising at least 1000 self-emissive individually addressable elements.
208.根据实施例205-207中任一个所述的光刻设备,包括小于10000个自发射式独立可寻址元件。208. The lithographic apparatus according to any one of embodiments 205-207, comprising less than 10000 self-emissive individually addressable elements.
209.根据实施例205-207中任一个所述的光刻设备,包括小于5000个自发射式独立可寻址元件。209. The lithographic apparatus according to any one of embodiments 205-207, comprising less than 5000 self-emissive individually addressable elements.
210.根据实施例205-209中任一个所述的光刻设备,其中所述自发射式独立可寻址元件是激光二极管。210. The lithographic apparatus according to any one of embodiments 205-209, wherein the self-emissive individually addressable elements are laser diodes.
211.根据实施例205-209中任一个所述的光刻设备,其中所述自发射式独立可寻址元件布置成具有从0.1-3微米的范围选出的在所述衬底上的斑尺寸。211. The lithographic apparatus according to any one of embodiments 205-209, wherein said self-emissive individually addressable elements are arranged to have spots on said substrate selected from the range of 0.1-3 microns size.
212.根据实施例205-209中任一个所述的光刻设备,其中所述自发射式独立可寻址元件布置成具有约1微米的在所述衬底上的斑尺寸。212. The lithographic apparatus according to any one of embodiments 205-209, wherein the self-emissive individually addressable elements are arranged to have a spot size on the substrate of about 1 micron.
213.一种用于将衬底以辐射曝光的光刻设备,所述光刻设备包括可编程图案形成装置,所述可编程图案形成装置使得,以10cm的曝光场长度为基准,具有100-25000个自发射式独立可寻址元件。213. A lithographic apparatus for exposing a substrate to radiation, the lithographic apparatus comprising a programmable patterning device such that, based on an exposure field length of 10 cm, 100- 25,000 self-emitting individually addressable elements.
214.根据实施例213所述的光刻设备,包括至少400个自发射式独立可寻址元件。214. The lithographic apparatus of embodiment 213 comprising at least 400 self-emissive individually addressable elements.
215.根据实施例213所述的光刻设备,包括至少1000个自发射式独立可寻址元件。215. The lithographic apparatus of embodiment 213 comprising at least 1000 self-emissive individually addressable elements.
216.根据实施例213-215中任一个所述的光刻设备,包括小于10000个自发射式独立可寻址元件。216. The lithographic apparatus according to any one of embodiments 213-215, comprising less than 10000 self-emissive individually addressable elements.
217.根据实施例213-215中任一个所述的光刻设备,包括小于5000个自发射式独立可寻址元件。217. The lithographic apparatus according to any one of embodiments 213-215, comprising less than 5000 self-emissive individually addressable elements.
218.根据实施例213-217中任一个所述的光刻设备,其中所述自发射式独立可寻址元件是激光二极管。218. The lithographic apparatus according to any one of embodiments 213-217, wherein the self-emissive individually addressable elements are laser diodes.
219.根据实施例213-217中任一个所述的光刻设备,其中所述自发射式独立可寻址元件布置成具有从0.1-3微米的范围选出的在所述衬底上的斑尺寸。219. The lithographic apparatus according to any one of embodiments 213-217, wherein said self-emissive individually addressable elements are arranged to have spots on said substrate selected from the range of 0.1-3 microns size.
220.根据实施例213-217中任一个所述的光刻设备,其中所述自发射式独立可寻址元件布置成具有约1微米的在所述衬底上的斑尺寸。220. The lithographic apparatus according to any one of embodiments 213-217, wherein the self-emissive individually addressable elements are arranged to have a spot size on the substrate of about 1 micron.
221.一种可编程图案形成装置,包括可旋转盘,所述盘具有100-25000个自发射式独立可寻址元件。221. A programmable patterning device comprising a rotatable disk having 100-25000 self-emitting individually addressable elements.
222.根据实施例221所述的可编程图案形成装置,其中所述盘包括至少400个自发射式独立可寻址元件。222. The programmable patterning device of embodiment 221, wherein the disc comprises at least 400 self-emissive individually addressable elements.
223.根据实施例221所述的可编程图案形成装置,其中所述盘包括至少1000个自发射式独立可寻址元件。223. The programmable patterning device of embodiment 221, wherein the disk comprises at least 1000 self-emissive individually addressable elements.
224.根据实施例221-223中任一个所述的可编程图案形成装置,其中所述盘包括小于10000个自发射式独立可寻址元件。224. The programmable patterning device according to any one of embodiments 221-223, wherein said disc comprises less than 10000 self-emissive individually addressable elements.
225.根据实施例221-223中任一个所述的可编程图案形成装置,其中所述盘包括小于5000个自发射式独立可寻址元件。225. The programmable patterning device according to any one of embodiments 221-223, wherein said disc comprises less than 5000 self-emissive individually addressable elements.
226.根据实施例221-225中任一个所述的可编程图案形成装置,其中所述自发射式独立可寻址元件是激光二极管。226. The programmable patterning device according to any one of embodiments 221-225, wherein the self-emissive individually addressable elements are laser diodes.
227.在制造平板显示器中使用一个或更多的本发明。227. Use of one or more of the present inventions in the manufacture of flat panel displays.
228.在集成电路封装中使用一个或更多的本发明。228. Use of one or more of the inventions in an integrated circuit package.
229.一种光刻方法,包括使用具有自发射式元件的可编程图案形成装置将衬底以辐射曝光,其中在所述曝光期间操作所述自发射式元件的所述可编程图案形成装置的功耗小于10kW。229. A method of lithography, comprising exposing a substrate to radiation using a programmable patterning device having self-emissive elements, wherein during said exposure operating said programmable patterning device of said self-emissive elements Power consumption is less than 10kW.
230.根据实施例229所述的方法,其中所述功耗小于5kW。230. The method of embodiment 229, wherein the power consumption is less than 5 kW.
231.根据实施例229或230所述的方法,其中所述功耗是至少100mW。231. The method of
232.根据实施例229-231中任一个所述的方法,其中所述自发射式元件是激光二极管。232. The method according to any one of embodiments 229-231, wherein the self-emissive element is a laser diode.
233.根据实施例232所述的方法,其中所述激光二极管是蓝紫激光二极管。233. The method of
234.一种光刻方法,包括使用具有自发射式元件的可编程图案形成装置将衬底以辐射曝光,其中在使用时每一发射式元件的光输出是至少1mW。234. A method of lithography comprising exposing a substrate to radiation using a programmable patterning device having self-emissive elements, wherein in use each emissive element has a light output of at least 1 mW.
235.根据实施例234所述的方法,其中所述光输出是至少10mW。235. The method of
236.根据实施例234所述的方法,其中所述光输出是至少50mW。236. The method of
237.根据实施例234-236中任一个所述的方法,其中所述光输出小于200mW。237. The method according to any one of embodiments 234-236, wherein the light output is less than 200 mW.
238.根据实施例234-237中任一个所述的方法,其中所述自发射式元件是激光二极管。238. The method according to any one of embodiments 234-237, wherein the self-emissive element is a laser diode.
239.根据实施例238所述的方法,其中所述激光二极管是蓝紫激光二极管。239. The method of
240.根据实施例234所述的方法,其中所述光输出大于5mW但小于或等于20mW。240. The method of
241.根据实施例234所述的方法,其中所述光输出大于5mW但小于或等于30mW。241. The method of
242.根据实施例234所述的方法,其中所述光输出大于5mW但小于或等于40mW。242. The method of
243.根据实施例234-242中任一个所述的方法,其中所述自发射式元件以单一模式进行操作。243. The method according to any one of embodiments 234-242, wherein the self-emissive element operates in a single mode.
244.一种光刻设备,包括:244. A lithographic apparatus comprising:
可编程图案形成装置,具有自发射式元件;和Programmable patterning device having self-emissive elements; and
可旋转框架,具有用于接收来自所述自发射式元件的辐射的光学元件,所述光学元件是折射式光学元件。A rotatable frame having optics for receiving radiation from said self-emissive element, said optics being refractive optics.
245.一种光刻设备,包括:245. A lithographic apparatus comprising:
可编程图案形成装置,具有自发射式元件;和Programmable patterning device having self-emissive elements; and
可旋转框架,具有用于接收来自所述自发射式元件的辐射的光学元件,所述可旋转框架没有用于接收来自任意所述自发射式元件或所有所述自发射式元件的辐射的反射式光学元件。A rotatable frame having optical elements for receiving radiation from said self-emissive elements, said rotatable frame having no reflections for receiving radiation from any or all of said self-emissive elements type optical components.
246.一种光刻设备,包括:246. A lithographic apparatus comprising:
可编程图案形成装置;和programmable patterning device; and
可旋转框架,所述可旋转框架包括具有光学元件的板,所述具有光学元件的板的表面是平坦的。A rotatable frame including a plate with optical elements, the surface of the plate with optical elements is flat.
247.在制造平板显示器时使用所述发明中的一个或更多个。247. Use of one or more of said inventions in the manufacture of flat panel displays.
248.在集成电路的封装中使用所述发明中的一个或更多个。248. Use of one or more of said inventions in the packaging of integrated circuits.
249.一种平板显示器,所述平板显示被根据所述方法中的任意方法制造。249. A flat panel display manufactured according to any of the methods.
250.一种根据所述方法中的任意方法制造的集成电路器件。250. An integrated circuit device fabricated according to any of the methods.
251.一种光刻设备,包括:251. A lithographic apparatus comprising:
两个或更多的光学装置列,配置成将束投影到衬底的目标部分上,所述两个或更多的光学装置列中的每一个包括用于提供所述束的一个或更多的辐射源和用于将所述束投影到目标部分上的投影系统;two or more columns of optics configured to project a beam onto a target portion of the substrate, each of the two or more columns of optics comprising one or more A radiation source and a projection system for projecting said beam onto a target portion;
扫描移动致动器,配置成相对于所述两个或更多的光学装置列沿扫描方向以扫描速度移动衬底;和a scanning movement actuator configured to move the substrate at a scanning speed in a scanning direction relative to the two or more columns of optics; and
两个或更多的位置测量装置,配置成确定相应的两个或更多的光学装置列相对于参考物体的位置。Two or more position measuring devices configured to determine the position of the respective two or more optical device columns relative to the reference object.
252.根据实施例251所述的光刻设备,其中所述参考物体包括至少一个标记,其中所述至少一个标记布置在所述两个或更多的光学装置列的两个相邻的光学装置列的目标部分的重叠部分中,其中所述至少一个标记用于两个相邻的光学装置列相对于彼此的位置测量。252. The lithographic apparatus according to embodiment 251, wherein said reference object comprises at least one marker, wherein said at least one marker is arranged at two adjacent optics of said two or more columns of optics In overlapping portions of target portions of columns, wherein the at least one marker is used for position measurement of two adjacent optical device columns relative to each other.
253.根据实施例251所述的光刻设备,其中所述参考物体包括多个标记,所述两个或更多的位置测量装置中的每一个包括用于接收所述多个标记中的一个标记的反射图像的图像传感器,其中光学装置列的位置可以基于投影到图像传感器上的反射图像来确定。253. The lithographic apparatus according to embodiment 251, wherein said reference object comprises a plurality of markers, each of said two or more position measuring devices comprises means for receiving one of said plurality of markers An image sensor of a reflected image of the marker, wherein the position of the optical column can be determined based on the reflected image projected onto the image sensor.
254.根据实施例253所述的光刻设备,其中所述一个标记布置在所述两个或更多的光学装置列的两个相邻的光学装置列的目标部分的重叠部分中,使得所述反射图像被两个位置测量装置接收。254. The lithographic apparatus according to embodiment 253, wherein said one mark is arranged in an overlapping portion of target portions of two adjacent optics columns of said two or more optics columns such that The reflected images are received by two position measuring devices.
255.根据实施例253或254所述的光刻设备,其中所述两个或更多的位置测量装置中的每一个包括分束器和1/4波片,布置成将反射图像引导至图像传感器。255. The lithographic apparatus according to
256.根据实施例251-255中任一实施例所述的光刻设备,其中所述位置测量装置集成到相应的光学装置列中。256. The lithographic apparatus according to any one of embodiments 251-255, wherein said position measurement devices are integrated into respective columns of optics.
257.根据实施例251-256中任一实施例所述的光刻设备,包括对准调节装置,用于基于所测量的位置来调节所述两个或更多的光学装置列的一个或更多的束的位置。257. The lithographic apparatus according to any one of embodiments 251-256, comprising alignment adjustment means for adjusting one or more of said two or more columns of optics based on the measured positions Multiple beam positions.
258.根据实施例257所述的光刻设备,其中所述对准调节装置配置成调节被投影到目标部分中的图案,用于对准所述两个或更多的光学装置列。258. The lithographic apparatus according to embodiment 257, wherein the alignment adjustment device is configured to adjust a pattern projected into a target portion for aligning the two or more optical device columns.
259.根据实施例257或258所述的光刻设备,其中所述对准调节装置配置成通过控制所述相应的两个或更多的光学装置列中的一个或更多的辐射源的激励时间和/或强度来调节所述图案。259. The lithographic apparatus according to
260.根据实施例251-259中任一实施例所述的光刻设备,其中每个光学装置列包括至少一个可移动的透镜元件,其中致动器连接至所述透镜元件,用于调节在相应的目标部分中生成的图案的位置。260. The lithographic apparatus according to any one of embodiments 251-259, wherein each optics column comprises at least one movable lens element, wherein an actuator is connected to the lens element for adjusting the The location of the generated pattern in the corresponding target section.
261.根据实施例251-260中任一实施例所述的光刻设备,其中所述光刻设备包括多于两个的光学装置列,且其中每个光学装置列包括位置测量装置。261. The lithographic apparatus according to any one of embodiments 251-260, wherein the lithographic apparatus comprises more than two optical columns, and wherein each optical column comprises a position measurement device.
262.根据实施例251-261中任一实施例所述的光刻设备,其中所述两个或更多的光学装置列的位置被在图案将被投影所在的衬底的表面的平面中在两个方向上测量。262. The lithographic apparatus according to any one of embodiments 251-261, wherein the positions of the two or more optical columns are plotted in the plane of the surface of the substrate on which the pattern is to be projected on Measured in two directions.
263.根据实施例251-262中任一实施例所述的光刻设备,其中所述参考物体是衬底。263. The lithographic apparatus according to any one of embodiments 251-262, wherein said reference object is a substrate.
264.根据实施例251-262中任一实施例所述的光刻设备,其中所述参考物体是安装在衬底支撑装置上的参考板。264. The lithographic apparatus according to any one of embodiments 251-262, wherein the reference object is a reference plate mounted on a substrate support.
265.根据实施例251-264中任一实施例所述的光刻设备,其中所述辐射源是自发射式对比度装置。265. The lithographic apparatus according to any one of embodiments 251-264, wherein the radiation source is a self-emissive contrast device.
266.根据实施例251-265中任一实施例所述的光刻设备,包括致动器,所述致动器用于相对于衬底移动所述两个或更多的光学装置列中的一个的至少一部分。266. The lithographic apparatus according to any one of embodiments 251-265, comprising an actuator for moving one of said two or more columns of optics relative to a substrate at least part of .
267.一种用于对准根据实施例251-266中任一实施例所述的光刻设备的光学装置列的方法,所述方法包括步骤:267. A method for aligning an optics column of a lithographic apparatus according to any one of embodiments 251-266, the method comprising the steps of:
测量多个光学装置列的目标部分相对于参考物体的位置;measuring a position of a target portion of a plurality of optical arrays relative to a reference object;
相对于彼此比较相邻的光学装置列的目标位置的位置;和comparing the positions of the target positions of adjacent columns of optical devices relative to each other; and
调节投影到目标部分上的图案用于对准光学装置列。Adjusting the pattern projected onto the target portion is used to align the columns of optics.
268.根据实施例267所述的方法,其中所述参考物体包括至少一个标记,其中所述至少一个标记布置在所述两个或更多的光学装置列的两个相邻的光学装置列的目标部分的重叠部分中,其中所述两个相邻的光学装置列中的至少一个标记的被测量的位置用于确定两个相邻的光学装置列相对于彼此的位置。268. The method of embodiment 267, wherein the reference object comprises at least one marker, wherein the at least one marker is disposed on two adjacent optical columns of the two or more optical columns The overlapping portion of the target portion wherein the measured position of at least one marker in the two adjacent columns of optics is used to determine the position of the two adjacent columns of optics relative to each other.
尽管在本文中可以做出具体的参考,将所述光刻设备用于制造特定的装置或结构(例如集成电路或平板显示器),但应当理解这里所述的光刻设备和光刻方法可以有其他的应用。应用包括但不限于集成电路、集成光学系统、磁畴存储器的引导和检测图案、平板显示器、液晶显示器(LCD)、OLED显示器、薄膜磁头、微机电器件(MEMS)、微光机电系统(MOEMS)、DNA芯片、封装(例如倒装芯片、再分布等)、柔性显示器或电子装置(其是显示器或电子装置,其可以是可滚动的、如纸一样可弯曲的和保持不变形的、保形的、高低不平的、薄和/或轻质的,例如柔性塑料显示器)等的制造。另外,例如在平板显示器中,本发明的设备和方法可以用于帮助产生各种层,例如薄膜晶体管层和/或彩色滤光片层。本领域技术人员应该理解的是,在这种替代应用的情况中,可以将其中使用的任意术语“晶片”或“管芯”分别认为是与更上位的术语“衬底”或“目标部分”同义。这里所指的衬底可以在曝光之前或之后进行处理,例如在轨道(例如,一种典型地将抗蚀剂层涂到衬底上并且对已曝光的抗蚀剂进行显影的工具)、量测工具或检验工具中。在可应用的情况下,可以将此处的公开内容应用于这种和其它衬底处理工具中。另外,所述衬底可以处理一次以上,例如以便产生多层IC,使得这里使用的所述术语“衬底”也可以表示已经包含多个已处理层的衬底。Although specific reference may be made herein to the lithographic apparatus being used to fabricate a particular device or structure (such as an integrated circuit or a flat panel display), it should be understood that the lithographic apparatus and lithographic methods described herein may have other applications. Applications include but are not limited to integrated circuits, integrated optical systems, guiding and detecting patterns for magnetic domain memories, flat panel displays, liquid crystal displays (LCD), OLED displays, thin-film magnetic heads, microelectromechanical devices (MEMS), micro-opto-electromechanical systems (MOEMS) , DNA chips, packaging (e.g. flip-chip, redistribution, etc.), flexible displays or electronic devices (which are displays or electronic devices that can be rollable, bendable like paper and remain indeformable, conformal rugged, thin and/or lightweight, such as flexible plastic displays), etc. Additionally, for example in flat panel displays, the apparatus and methods of the present invention may be used to facilitate the creation of various layers, such as thin film transistor layers and/or color filter layers. It will be understood by those skilled in the art that, in the case of this alternate application, any term "wafer" or "die" used therein may be considered to be synonymous with the more general term "substrate" or "target portion", respectively. synonymous. The substrate referred to here may be processed before or after exposure, such as in a track (e.g., a tool that typically applies a layer of resist to a substrate and develops the exposed resist), dose test tool or inspection tool. Where applicable, the disclosure herein may be used in this and other substrate processing tools. In addition, the substrate may be processed more than once, for example in order to produce a multilayer IC, so that the term "substrate" as used herein may also denote a substrate that already contains a plurality of processed layers.
此处使用的术语“辐射”和“束”包括所有类型的电磁辐射,包括紫外(UV)辐射(例如具有或约365、248、193、157或126nm的波长)以及极紫外(EUV)辐射(例如具有在5-20nm的范围内的波长)以及粒子束,诸如离子束或电子束。The terms "radiation" and "beam" as used herein include all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g., having a wavelength at or about 365, 248, 193, 157, or 126 nm) and extreme ultraviolet (EUV) radiation ( For example with wavelengths in the range of 5-20 nm) and particle beams such as ion beams or electron beams.
平板显示器衬底可以是矩形形状。设计用于曝光这种类型的衬底的光刻设备可以提供曝光区域,其覆盖矩形衬底的全部宽度,或覆盖所述宽度的一部分(例如宽度的一半)。可以在曝光区域的下面扫描衬底,同时通过图案化的束同步扫描图案形成装置或图案形成装置提供变化的图案。这样,期望的图案的所有或一部分被转移到衬底上。如果曝光区域覆盖衬底的全部宽度,那么可以以单次扫描完成曝光。如果曝光区域覆盖例如衬底的宽度的一半,那么可以在第一扫描之后横向地移动衬底,和通常进行另一扫描以曝光衬底的剩余部分。Flat panel display substrates may be rectangular in shape. A lithographic apparatus designed for exposing substrates of this type may provide an exposure area which covers the full width of a rectangular substrate, or a fraction of said width (eg half of the width). The substrate can be scanned under the exposure area while simultaneously scanning the patterning device or patterning device with a patterned beam to provide a changing pattern. In this way, all or part of the desired pattern is transferred to the substrate. Exposure can be done in a single scan if the exposed area covers the full width of the substrate. If the exposure area covers eg half the width of the substrate, the substrate can be moved laterally after the first scan, and usually another scan is performed to expose the remainder of the substrate.
此处使用的术语“图案形成装置”应当广义地诠释成表示可以用于调制辐射束的横截面的任意器件,诸如产生(一部分)衬底中的图案。应当注意,赋予辐射束的图案可以不完全对应于衬底的目标部分中的期望的图案,例如如果图案包括相移特征或所谓的辅助特征。类似地,最终在衬底上产生的图案可能不对应于在独立可控元件的阵列上的任一瞬间形成的图案。这可以对于以下的布置尤其是这样的:在所述布置中,形成在衬底的每一部分上的最终图案在给定的时间周期上或在给定数量的曝光期间建造,在给定的时间周期或给定数量的曝光期间,独立可控元件的阵列上的图案和/或衬底的相对位置变化。通常,在衬底的目标部分上产生的图案将对应于在目标部分中产生的器件中的特定功能层,例如集成电路或平板显示器(例如平板显示器中的彩色滤光片层或平板显示器中的薄膜晶体管层)。这样的图案形成装置的例子包括例如掩模版、可编程反射镜阵列、激光二极管阵列、发光二极管阵列、光栅光阀以及LCD阵列。其图案在电子装置(例如计算机)的帮助下是可编程的图案形成装置在此处被统称为“对比度装置”,例如包括多个可编程元件的图案形成装置,其可以每个可编程元件调制辐射束的一部分的强度(例如除了掩模版之外在之前的句子中提及的所有器件),包括具有多个可编程元件的电子可编程图案形成装置,其通过相对于辐射束的相邻部分来调制辐射束的一部分的相位来将图案赋予辐射束。在一实施例中,图案形成装置包括至少10个可编程元件,例如至少100,至少1000,至少10000,至少100000,至少1000000,或至少10000000个可编程元件。在下文一定程度上更加详细地讨论这些器件中的几个的实施例:The term "patterning device" as used herein should be broadly interpreted to mean any device that can be used to modulate the cross-section of a radiation beam, such as to create a pattern in (a portion of) a substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, eg if the pattern includes phase shifting features or so called assist features. Similarly, the resulting pattern on the substrate may not correspond to the pattern formed at any one instant on the array of individually controllable elements. This may be especially true for arrangements in which the final pattern formed on each part of the substrate is built over a given period of time or during a given number of exposures, at a given time During a period or a given number of exposures, the pattern on the array of individually controllable elements and/or the relative position of the substrate varies. Typically, the pattern produced on the target portion of the substrate will correspond to a specific functional layer in the device produced in the target portion, such as an integrated circuit or a flat panel display (such as a color filter layer in a flat panel display or a layer in a flat panel display). thin film transistor layer). Examples of such patterning devices include, for example, reticles, programmable mirror arrays, laser diode arrays, light emitting diode arrays, grating light valves, and LCD arrays. A patterning device whose pattern is programmable with the aid of an electronic device such as a computer is collectively referred to herein as a "contrast device", such as a patterning device comprising a plurality of programmable elements that can be modulated per programmable element. The intensity of a portion of a radiation beam (such as all devices mentioned in the preceding sentence except reticles), including electronically programmable patterning devices with a plurality of programmable elements, passed through relative to adjacent portions of the radiation beam modulating the phase of a portion of the radiation beam to impart a pattern to the radiation beam. In one embodiment, the patterning device includes at least 10 programmable elements, such as at least 100, at least 1,000, at least 10,000, at least 100,000, at least 1,000,000, or at least 1,000,000 programmable elements. Embodiments of several of these devices are discussed in somewhat more detail below:
可编程反射镜阵列。可编程反射镜阵列可以包括矩阵可寻址表面,该矩阵可寻址表面具有粘弹性控制层和反射表面。这样的设备所依据的基本原理是例如反射表面的被寻址的区域将入射的辐射反射作为衍射辐射,而未被寻址的区域将入射的辐射反射作为未被衍射的辐射。通过使用适当的空间滤波器,可以从反射束中过滤出未被衍射的辐射,仅留下衍射辐射到达衬底。这样,所述束根据矩阵可寻址表面的寻址图案而被图案化。应当理解,作为替代,滤波器可以过滤掉衍射辐射,留下未被衍射的辐射到达衬底。衍射的光学MEMS器件的阵列也可以以对应的方式使用。衍射的光学MEMS器件可以包括多个反射带,所述多个反射带可以相对于彼此变形,以形成反射入射辐射作为衍射辐射的光栅。可编程反射镜阵列的另外的实施例采用微小反射镜的矩阵布置,每个微小反射镜可以通过施加适合的局部电场或通过采用压电致动装置围绕轴线独立地倾斜。倾斜度定义了每一反射镜的状态。在元件是无缺陷时,反射镜通过来自控制器的适合的控制信号能够进行控制。每个无缺陷的元件是可控制的,以采用一系列状态中的任意一个,以便调整在投影的辐射图案中的其对应的像素的强度。再者,反射镜是矩阵可寻址的,使得被寻址的反射镜沿着与未被寻址的反射镜不同的方向反射入射的辐射束;这样,反射束可以根据矩阵可寻址反射镜的寻址图案进行图案化。可以使用适合的电子方式进行所需要的矩阵寻址。如此处所引述的有关反射镜阵列的更多的信息可以参考例如美国专利Nos.US 5,296,891和US 5,523,193以及PCT专利申请公开Nos.WO 98/38597和WO98/33096,通过参考将它们的全部内容并入本文中。Programmable mirror array. A programmable mirror array may include a matrix addressable surface having a viscoelastic control layer and a reflective surface. The basic principle on which such devices are based is that addressed areas of eg a reflective surface reflect incident radiation as diffracted radiation, whereas non-addressed areas reflect incident radiation as undiffracted radiation. By using an appropriate spatial filter, it is possible to filter out the undiffracted radiation from the reflected beam, leaving only the diffracted radiation to reach the substrate. In this way, the beams are patterned according to the addressing pattern of the matrix addressable surface. It will be appreciated that, alternatively, a filter may filter out diffracted radiation, leaving undiffracted radiation to reach the substrate. Arrays of diffractive optical MEMS devices can also be used in a corresponding manner. A diffractive optical MEMS device may comprise a plurality of reflective strips deformable relative to each other to form a grating that reflects incident radiation as diffracted radiation. A further embodiment of a programmable mirror array employs a matrix arrangement of tiny mirrors, each of which can be independently tilted about an axis by applying a suitable local electric field or by employing piezoelectric actuation means. The tilt defines the state of each mirror. When the component is defect-free, the mirror can be controlled by suitable control signals from the controller. Each non-defective element is controllable to assume any one of a series of states in order to adjust the intensity of its corresponding pixel in the projected radiation pattern. Furthermore, the mirrors are matrix addressable such that addressed mirrors reflect an incident radiation beam in a different direction than non-addressed mirrors; The addressing pattern is patterned. The required matrix addressing can be performed using suitable electronic means. More information on mirror arrays as cited herein can be found in, for example, U.S. Patent Nos. US 5,296,891 and US 5,523,193 and PCT Patent Application Publication Nos. WO 98/38597 and WO 98/33096, the entire contents of which are incorporated by reference In this article.
可编程LCD阵列。在美国专利No.US 5,229,872中提供了这样的构造的例子,通过参考将其全部内容并入本文中。Programmable LCD array. Examples of such constructions are provided in U.S. Patent No. US 5,229,872, the entire contents of which are incorporated herein by reference.
光刻设备可以包括一个或更多的图案形成装置,例如一个或更多的对比度装置。例如,它可以具有多个独立可控元件的阵列,每个彼此独立地进行控制。在这样的布置中,独立可控元件阵列中的一些或全部可以具有公共的照射系统(或照射系统的一部分)、用于独立可控元件的阵列的公共支撑结构和/或公共的投影系统(或投影系统的一部分)中的至少一个。A lithographic apparatus may comprise one or more patterning devices, such as one or more contrast devices. For example, it may have a plurality of arrays of independently controllable elements, each controlled independently of each other. In such an arrangement, some or all of the arrays of individually controllable elements may have a common illumination system (or part of an illumination system), a common support structure for the array of individually controllable elements, and/or a common projection system ( or part of a projection system).
应当理解,在预先偏置特征、光学邻近校正特征、相位变化技术和/或多重曝光技术被使用时,例如在独立可控元件的阵列上“显示的”图案可以基本上不同于最终转移到衬底的一个层或衬底上的图案。类似地,最终在衬底上产生的图案可能不对应于在独立可控元件的阵列上在任一瞬间形成的图案。这可以对以下布置尤其是这样的:在所述布置中,形成在衬底的每一部分上的最终图案在给定的时间周期上或在给定数量的曝光上建造,在给定的时间周期或给定数量的曝光期间独立可控元件的阵列上的图案和/或衬底的相对位置变化。It should be understood that where pre-biasing features, optical proximity correction features, phase change techniques, and/or multiple exposure techniques are used, for example, the pattern "displayed" on an array of individually controllable elements may be substantially different from the pattern ultimately transferred to the substrate. A layer or pattern on a substrate. Similarly, the resulting pattern on the substrate may not correspond to the pattern formed at any one instant on the array of individually controllable elements. This may be especially true for arrangements in which the final pattern formed on each part of the substrate is built over a given time period or over a given number of exposures, at a given time period Or the pattern on the array of individually controllable elements and/or the relative position of the substrate changes during a given number of exposures.
投影系统和/或照射系统可以包括各种类型的光学部件,例如折射式、反射式、磁性式、电磁式、静电式或其它类型的光学部件,或它们的任意组合,以引导、成形或控制辐射束。Projection systems and/or illumination systems may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof, to direct, shape, or control radiation beam.
所述光刻设备可以是具有两个(例如双台)或更多衬底台(和/或两个或更多的图案形成装置台)的类型。在这种“多台”机器中,可以并行地使用附加的台,或可以在一个或更多个台上执行预备步骤的同时,将一个或更多个其它台用于曝光。The lithographic apparatus may be of the type having two (eg dual stage) or more substrate stages (and/or two or more patterning device stages). In such "multi-stage" machines, additional tables may be used in parallel, or one or more other tables may be used for exposure while preparatory steps are being performed on one or more tables.
光刻设备还可以是至少一部分衬底可以被具有相对高折射率的“浸没液体”(例如水)覆盖、以便填充投影系统和衬底之间的空间的类型。浸没液体还可以被施加至光刻设备中的其它空间,例如在图案形成装置和投影系统之间。浸没技术用于增加投影系统的数值孔径。如在此处所使用的术语“浸没”并不意味着诸如衬底等结构必须浸没在液体中,而是意味着在曝光期间液体位于投影系统和衬底之间。The lithographic apparatus can also be of the type that at least a portion of the substrate can be covered with an "immersion liquid" (eg water) having a relatively high refractive index, so as to fill the space between the projection system and the substrate. The immersion liquid may also be applied to other spaces in the lithographic apparatus, such as between the patterning device and the projection system. Immersion techniques are used to increase the numerical aperture of projection systems. The term "immersion" as used herein does not mean that the structure such as the substrate is necessarily submerged in the liquid, but that the liquid is located between the projection system and the substrate during exposure.
另外,设备可以设置有流体处理单元,以允许流体和衬底的照射部分之间的相互作用(例如选择性地将化学品连接至衬底或选择性地修改衬底的表面结构)。Additionally, the device may be provided with a fluid handling unit to allow interaction between the fluid and the irradiated portion of the substrate (eg selectively attaching chemicals to the substrate or selectively modifying the surface structure of the substrate).
在一实施例中,衬底具有大致圆形形状,可选地具有沿着其周界的一部分的凹口和/或平坦化的边缘。在一实施例中,衬底具有多边形形状,例如矩形形状。衬底具有大致圆形形状的实施例包括这样的实施例:其中衬底的直径为至少25mm,例如至少50mm,至少75mm,至少100mm,至少125mm,至少150mm,至少175mm,至少200mm,至少250mm,或至少300mm。在一实施例中,衬底的直径为至多500mm,至多400mm,至多350mm,至多300mm,至多250mm,至多200mm,至多150mm,至多100mm,或至多75mm。衬底为多边形(例如矩形)的实施例包括衬底的至少1个侧边,例如至少2个侧边或至少3个侧边具有至少5cm,例如至少25cm,至少50cm,至少100cm,至少150cm,至少200cm,或至少250cm的长度的实施例。在一实施例中,衬底的至少1个侧边具有的长度为至多1000cm,例如至多750cm,至多500cm,至多350cm,至多250cm,至多150cm,或至多75cm。在一实施例中,衬底是具有长度为约250-350cm且宽度为约250-300cm的矩形衬底。衬底的厚度可以变化,且一定程度上可以依赖于例如衬底材料和/或衬底尺寸。在一实施例中,厚度是至少50μm,例如至少100μm,至少200μm,至少300μm,至少400μm,至少500μm,或至少600μm。在一实施例中,衬底的厚度是至多5000μm,例如至多3500μm,至多2500μm,至多1750μm,至多1250μm,至多1000μm,至多800μm,至多600μm,至多500μm,至多400μm,或至多300μm。这里所指的衬底可以在曝光之前或之后进行处理,例如在轨道(一种典型地将抗蚀剂层涂到衬底上并且对已曝光的抗蚀剂进行显影的工具)中。可以在曝光之前或曝光之后测量衬底的性质,例如在量测工具和/或检验工具中。In an embodiment, the substrate has a generally circular shape, optionally with a notch and/or a flattened edge along a portion of its perimeter. In an embodiment, the substrate has a polygonal shape, such as a rectangular shape. Embodiments in which the substrate has a substantially circular shape include embodiments in which the diameter of the substrate is at least 25mm, such as at least 50mm, at least 75mm, at least 100mm, at least 125mm, at least 150mm, at least 175mm, at least 200mm, at least 250mm, or at least 300mm. In one embodiment, the diameter of the substrate is at most 500 mm, at most 400 mm, at most 350 mm, at most 300 mm, at most 250 mm, at most 200 mm, at most 150 mm, at most 100 mm, or at most 75 mm. Embodiments where the substrate is polygonal (e.g. rectangular) include at least 1 side of the substrate, such as at least 2 sides or at least 3 sides having at least 5 cm, such as at least 25 cm, at least 50 cm, at least 100 cm, at least 150 cm, Embodiments having a length of at least 200 cm, or at least 250 cm. In one embodiment, at least one side of the substrate has a length of at most 1000 cm, such as at most 750 cm, at most 500 cm, at most 350 cm, at most 250 cm, at most 150 cm, or at most 75 cm. In one embodiment, the substrate is a rectangular substrate having a length of about 250-350 cm and a width of about 250-300 cm. The thickness of the substrate may vary and may depend to some extent on, for example, the substrate material and/or substrate dimensions. In an embodiment, the thickness is at least 50 μm, such as at least 100 μm, at least 200 μm, at least 300 μm, at least 400 μm, at least 500 μm, or at least 600 μm. In one embodiment, the thickness of the substrate is at most 5000 μm, such as at most 3500 μm, at most 2500 μm, at most 1750 μm, at most 1250 μm, at most 1000 μm, at most 800 μm, at most 600 μm, at most 500 μm, at most 400 μm, or at most 300 μm. The substrate referred to here may be processed before or after exposure, for example in a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist). Properties of the substrate may be measured before or after exposure, for example in a metrology tool and/or inspection tool.
在一实施例中,将抗蚀剂层设置在衬底上。在一实施例中,衬底是晶片,例如半导体晶片。在一实施例中,晶片材料是从由Si,SiGe,SiGeC,SiC,Ge,GaAs,InP和InAs构成的组中选择的。在一实施例中,晶片是III/V族化合物半导体晶片。在一实施例中,晶片是硅晶片。在一实施例中,衬底是陶瓷衬底。在一实施例中,衬底是玻璃衬底。玻璃衬底可能是有用的,例如在制造平板显示器和液晶显示器面板中。在一实施例中,衬底是塑料衬底。在一实施例中,衬底是透明的(对于人的肉眼)。在一实施例中,衬底是具有颜色的。在一实施例中,衬底是没有颜色的。In one embodiment, a resist layer is disposed on the substrate. In an embodiment, the substrate is a wafer, such as a semiconductor wafer. In one embodiment, the wafer material is selected from the group consisting of Si, SiGe, SiGeC, SiC, Ge, GaAs, InP and InAs. In one embodiment, the wafer is a III/V compound semiconductor wafer. In one embodiment, the wafer is a silicon wafer. In one embodiment, the substrate is a ceramic substrate. In one embodiment, the substrate is a glass substrate. Glass substrates may be useful, for example, in the manufacture of flat panel displays and liquid crystal display panels. In one embodiment, the substrate is a plastic substrate. In one embodiment, the substrate is transparent (to the naked human eye). In one embodiment, the substrate is colored. In one embodiment, the substrate is colorless.
虽然在一实施例中图案形成装置104如在上文描述和/或显示成在衬底114之上,但是它可以替代或另外地位于衬底114的下面。另外,在一实施例中,图案形成装置104和衬底114可以是并排的,例如图案形成装置104和衬底114垂直地延伸,图案被水平地投影。在一实施例中,提供图案形成装置104以曝光衬底114的至少两个相对的侧面。例如,可以至少在衬底114的每个各自的相对侧面上具有至少两个图案形成装置104,以曝光这些侧面。在一实施例中,可能具有单个图案形成装置104,以投影衬底114的一个侧面和适合的光学装置(例如束引导反射镜)而将来自单个图案形成装置104的图案投影到衬底114的另一侧面上。While
尽管以上已经描述了本发明的特定的实施例,但是应该理解的是本发明可以以与上述不同的形式实现。例如,本发明可以采取包含用于描述上述公开的方法的一个或更多个机器可读指令序列的计算机程序的形式,或者采取具有在其中存储的这种计算机程序的数据存储介质的形式(例如,半导体存储器、磁盘或光盘)。While specific embodiments of the invention have been described above, it should be understood that the invention may be embodied in forms other than those described above. For example, the invention may take the form of a computer program containing one or more sequences of machine-readable instructions for describing the methods disclosed above, or a data storage medium having such a computer program stored therein (e.g. , semiconductor memory, magnetic disk or optical disk).
另外,虽然在特定的实施例和例子的情形下公开了本发明,但是本领域的技术人员应当理解,本发明超出特定公开的实施例延伸至其它的可替代的实施例和/或本发明的使用和其显而易见的修改和等价物。另外,尽管详细地显示和描述了本发明的许多变形,但是在本发明的范围内的其它修改基于这一公开对本领域技术人员是容易理解的。例如,设想实施例的特定特征和方面的各种组合或子组合可以被进行且仍然落到本发明的范围内。因此,应当理解,公开的实施例的各种特征和方面可以彼此结合或替代,用于形成公开的本发明的变化的模式。例如在一实施例中,图5的可移动的独立可控元件的实施例可以与独立可控元件的不可移动的阵列组合,例如提供或具有备份系统。Additionally, although the invention has been disclosed in the context of specific embodiments and examples, those skilled in the art will appreciate that the invention extends beyond the specific disclosed embodiments to other alternative embodiments and/or to the invention. Use and its obvious modifications and equivalents. In addition, while many variations of the invention have been shown and described in detail, other modifications within the scope of the invention will be readily apparent to those skilled in the art based on this disclosure. For example, it is contemplated that various combinations or sub-combinations of specific features and aspects of the embodiments may be made and still fall within the scope of the present invention. Accordingly, it should be understood that various features and aspects of the disclosed embodiments can be combined with or substituted for each other in forming varying modes of the disclosed invention. For example, in one embodiment, the embodiment of movable individually controllable elements of FIG. 5 may be combined with a non-movable array of individually controllable elements, eg, to provide or have a backup system.
因此,尽管在上文描述了本发明的各种实施例,但是应当理解,仅通过举例的方式显示出它们,且不是限制性的。相关领域的技术人员应当明白,在不背离本发明的精神和范围的条件下,可以对本发明在形式和细节上进行各种变化。因此,本发明的宽度和范围不应当被上文描述的示例性实施例中的任意一个限制,而是应当仅根据权利要求和它们的等同物来进行限定。Accordingly, while various embodiments of the present invention have been described above, it should be understood that they have been presented by way of example only, and not limitation. It will be understood by those skilled in the relevant art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. Thus, the breadth and scope of the present invention should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the claims and their equivalents.
Claims (18)
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| US61/322,505 | 2010-04-09 | ||
| PCT/EP2011/052401 WO2011104173A1 (en) | 2010-02-23 | 2011-02-18 | Lithographic apparatus and device manufacturing method |
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| CN102770810A true CN102770810A (en) | 2012-11-07 |
| CN102770810B CN102770810B (en) | 2016-01-06 |
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| KR (1) | KR101496883B1 (en) |
| CN (1) | CN102770810B (en) |
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| TWI639064B (en) * | 2014-04-01 | 2018-10-21 | 日商尼康股份有限公司 | Substrate processing device and element manufacturing method |
| CN106164779B (en) * | 2014-04-01 | 2019-01-22 | 株式会社尼康 | Substrate processing equipment |
| US10908507B2 (en) | 2016-07-13 | 2021-02-02 | Applied Materials, Inc. | Micro LED array illumination source |
| WO2018013270A1 (en) * | 2016-07-13 | 2018-01-18 | Applied Materials, Inc. | Micro led array as illumination source |
| JP2021535407A (en) * | 2018-08-24 | 2021-12-16 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | Measuring head that determines the position of at least one object |
| KR102547513B1 (en) * | 2022-01-25 | 2023-06-26 | (주)오로스 테크놀로지 | Apparatus for Optical Inspection |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4769680A (en) * | 1987-10-22 | 1988-09-06 | Mrs Technology, Inc. | Apparatus and method for making large area electronic devices, such as flat panel displays and the like, using correlated, aligned dual optical systems |
| CN1573576A (en) * | 2003-05-30 | 2005-02-02 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| EP1569035A1 (en) * | 2004-02-27 | 2005-08-31 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TW200732861A (en) * | 2006-02-16 | 2007-09-01 | Nikon Corp | Exposure apparatus, exposing method, and device manufacturing method |
| US20090262319A1 (en) * | 2008-03-10 | 2009-10-22 | Hiroyasu Matsuura | Maskless exposure method |
| JP2010014797A (en) * | 2008-07-01 | 2010-01-21 | Nsk Ltd | Maskless exposure apparatus |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5523193A (en) | 1988-05-31 | 1996-06-04 | Texas Instruments Incorporated | Method and apparatus for patterning and imaging member |
| ATE123885T1 (en) | 1990-05-02 | 1995-06-15 | Fraunhofer Ges Forschung | EXPOSURE DEVICE. |
| US5229872A (en) | 1992-01-21 | 1993-07-20 | Hughes Aircraft Company | Exposure device including an electrically aligned electronic mask for micropatterning |
| US5216247A (en) * | 1992-02-07 | 1993-06-01 | Ying Wang | Optical scanning method with circular arc scanning traces |
| US5610754A (en) * | 1994-08-09 | 1997-03-11 | Gheen; Gregory | Method and apparatus for photolithography by rotational scanning |
| ATE216091T1 (en) | 1997-01-29 | 2002-04-15 | Micronic Laser Systems Ab | METHOD AND DEVICE FOR GENERATING A PATTERN ON A SUBSTRATE COATED WITH PHOTORESIST USING A FOCUSED LASER BEAM |
| SE509062C2 (en) | 1997-02-28 | 1998-11-30 | Micronic Laser Systems Ab | Data conversion method for a multi-beam laser printer for very complex microcolytographic designs |
| JP2001296667A (en) * | 2000-04-14 | 2001-10-26 | Nikon Corp | Scanning exposure method, scanning type exposure apparatus, and mask |
| JP2003092248A (en) * | 2001-09-17 | 2003-03-28 | Canon Inc | Position detecting apparatus, positioning apparatus and methods thereof, and exposure apparatus and device manufacturing method |
| JP4496711B2 (en) * | 2003-03-31 | 2010-07-07 | 株式会社ニコン | Exposure apparatus and exposure method |
| JP4312535B2 (en) * | 2003-08-06 | 2009-08-12 | シャープ株式会社 | Pattern exposure equipment |
| JP2007101592A (en) * | 2005-09-30 | 2007-04-19 | Nikon Corp | Scanning exposure apparatus and microdevice manufacturing method |
| JP2010014796A (en) * | 2008-07-01 | 2010-01-21 | Nsk Ltd | Maskless exposure apparatus |
-
2011
- 2011-02-18 WO PCT/EP2011/052401 patent/WO2011104173A1/en not_active Ceased
- 2011-02-18 NL NL2006260A patent/NL2006260A/en not_active Application Discontinuation
- 2011-02-18 CN CN201180010603.4A patent/CN102770810B/en not_active Expired - Fee Related
- 2011-02-18 JP JP2012554298A patent/JP5603956B2/en not_active Expired - Fee Related
- 2011-02-18 KR KR1020127024057A patent/KR101496883B1/en not_active Expired - Fee Related
- 2011-02-23 TW TW100106089A patent/TWI438580B/en not_active IP Right Cessation
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4769680A (en) * | 1987-10-22 | 1988-09-06 | Mrs Technology, Inc. | Apparatus and method for making large area electronic devices, such as flat panel displays and the like, using correlated, aligned dual optical systems |
| CN1573576A (en) * | 2003-05-30 | 2005-02-02 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| EP1569035A1 (en) * | 2004-02-27 | 2005-08-31 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| CN1684002A (en) * | 2004-02-27 | 2005-10-19 | Asml荷兰有限公司 | Lithographic printing apparatus and device manufacturing method |
| TW200732861A (en) * | 2006-02-16 | 2007-09-01 | Nikon Corp | Exposure apparatus, exposing method, and device manufacturing method |
| US20090262319A1 (en) * | 2008-03-10 | 2009-10-22 | Hiroyasu Matsuura | Maskless exposure method |
| JP2010014797A (en) * | 2008-07-01 | 2010-01-21 | Nsk Ltd | Maskless exposure apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101496883B1 (en) | 2015-03-02 |
| WO2011104173A1 (en) | 2011-09-01 |
| TW201214057A (en) | 2012-04-01 |
| KR20130028065A (en) | 2013-03-18 |
| CN102770810B (en) | 2016-01-06 |
| TWI438580B (en) | 2014-05-21 |
| JP2013527593A (en) | 2013-06-27 |
| JP5603956B2 (en) | 2014-10-08 |
| NL2006260A (en) | 2011-08-24 |
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